JPS6161693B2 - - Google Patents
Info
- Publication number
- JPS6161693B2 JPS6161693B2 JP16955081A JP16955081A JPS6161693B2 JP S6161693 B2 JPS6161693 B2 JP S6161693B2 JP 16955081 A JP16955081 A JP 16955081A JP 16955081 A JP16955081 A JP 16955081A JP S6161693 B2 JPS6161693 B2 JP S6161693B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor element
- anode lead
- water
- lead
- repellent coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 56
- 239000005871 repellent Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 8
- 239000012452 mother liquor Substances 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】
本発明は固体電解コンデンサの製造方法に関
し、特に弁作用を有する金属粉末の成形体よりな
るコンデンサエレメントより導出された陽極リー
ドへの半導体層形成部材の這い上り現象を軽減さ
せることを目的とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solid electrolytic capacitor, and in particular to reducing the phenomenon of a semiconductor layer forming member creeping up onto an anode lead led out from a capacitor element made of a molded body of metal powder having valve action. The purpose is to
一般に、この種固体電解コンデンサは例えば第
１図に示すように、タンタル、ニオブ、アルミニ
ウムなどのように弁作用を有する金属粉末を円柱
状に加圧成形し焼結してなるコンデンサエレメン
トＡに予め弁作用を有する金属線を陽極リードＢ
として植立し、この陽極リードＢのコンデンサエ
レメントＡからの導出部分の第１の外部リード部
材Ｃを溶接すると共に、第２の外部リード部材Ｄ
をコンデンサエレメントＡの周面に酸化層、半導
体層を介して形成された電極引出し層に半田付け
し、然る後、コンデンサエレメントＡの全周面を
樹脂材Ｅにて被覆して構成されている。 In general, this type of solid electrolytic capacitor is manufactured by forming a capacitor element A in advance, which is made by press-molding metal powder having a valve action such as tantalum, niobium, or aluminum into a cylindrical shape and sintering it, as shown in Fig. 1. Connect the metal wire with valve action to the anode lead B
The first external lead member C of the anode lead B leading out from the capacitor element A is welded to the second external lead member D.
is soldered to an electrode lead layer formed on the circumferential surface of capacitor element A via an oxide layer and a semiconductor layer, and then the entire circumferential surface of capacitor element A is covered with resin material E. There is.
ところで、このコンデンサエレメントＡはそれ
より導出された陽極リードＢに第１の外部リード
部材Ｃを溶接するに先立つて、陽極リードＢと共
に化成処理によりその表面に酸化層が形成され、
さらにコンデンサエレメントＡのみを半導体母液
に一定時間浸漬し充分に含浸させた後、高温雰囲
気中において熱分解反応を起させ酸化層上に半導
体層が形成されている。 By the way, prior to welding the first external lead member C to the anode lead B led out from the capacitor element A, an oxide layer is formed on the surface of the capacitor element A by chemical conversion treatment together with the anode lead B.
Further, only the capacitor element A is immersed in the semiconductor mother liquor for a certain period of time to fully impregnate it, and then a thermal decomposition reaction is caused in a high temperature atmosphere to form a semiconductor layer on the oxide layer.
しかし乍ら、陽極リードＢの表面には例えば軸
方向に多くのダイス傷が存在している関係で、コ
ンデンサエレメントＡに含浸された半導体母液が
このダイス傷を通つて陽極リードＢのコンデンサ
エレメントＡからの導出部分に付着し、熱分解さ
れていわゆる半導体層の這い上りを生ずる。通
常、半導体母液の含浸−熱分解操作はコンデンサ
エレメントＡが多孔質であることに鑑み数回以上
繰り返される関係で、半導体層形成部材の這い上
りもさらに進行する傾向にある。 However, since there are many die scratches on the surface of the anode lead B, for example in the axial direction, the semiconductor mother liquid impregnated in the capacitor element A passes through the die scratches on the capacitor element A of the anode lead B. It adheres to the lead-out portion of the semiconductor layer and is thermally decomposed to cause what is called a creep-up of the semiconductor layer. Normally, the impregnation-pyrolysis operation of the semiconductor mother liquor is repeated several times or more in view of the porous nature of the capacitor element A, and the creeping up of the semiconductor layer forming member tends to progress further.
従つて、陽極リードＢの導出部分に第１の外部
リード部材Ｃを溶接する際に、第１の外部リード
部材Ｃと這い上つた半導体層とが接触して漏洩電
流が増加したり、時には陰極と陽極とが短絡され
てしまいコンデンサとしての機能を奏し得なくな
るという問題がある。 Therefore, when welding the first external lead member C to the lead-out portion of the anode lead B, the first external lead member C and the semiconductor layer that has climbed up may come into contact, increasing leakage current, and sometimes the cathode There is a problem in that the capacitor and the anode are short-circuited and cannot function as a capacitor.
それ故に、本出願人は先にコンデンサエレメン
トに半導体層を形成するに先立つて、コンデンサ
エレメント面より導出された陽極リード部分にの
み撥水性被膜を形成することにより、半導体層の
這い上り形成を防止する製造方法を提案した。 Therefore, before forming the semiconductor layer on the capacitor element, the applicant prevents the formation of the semiconductor layer by forming a water-repellent coating only on the anode lead portion led out from the surface of the capacitor element. We proposed a manufacturing method for this purpose.
この方法によれば、仮に陽極リードにダイス傷
が形成されていても、半導体母液の這い上りを撥
水性被膜の撥水効果によつて確実に防止すること
ができるために、第１の外部リード部材が溶接さ
れる陽極リード部分への半導体層の形成を防止す
ることができ、漏洩電流特性の劣化を防止できる
ものである。 According to this method, even if a die scratch is formed on the anode lead, it is possible to reliably prevent the semiconductor mother liquor from creeping up due to the water-repellent effect of the water-repellent coating. It is possible to prevent the formation of a semiconductor layer on the anode lead portion to which the member is welded, and it is possible to prevent deterioration of leakage current characteristics.
しかし乍ら、陽極リードＢへの撥水性被膜の形
成は例えば液状の撥水性部材にコンデンサエレメ
ントＡ及び陽極リードＢを浸漬した後、コンデン
サエレメントＡにのみ付着した撥水性部材を洗
浄、除去することにより行われているのである
が、コンデンサエレメントＡの深層部にまで含浸
された撥水性部材は簡単な洗浄によつて除去する
ことはできない。従つて、長時間洗浄液に浸漬し
なければならないために、作業性が著しく損なわ
れ、量産工程への適用が困難であるという問題が
ある。また、固体電解コンデンサエレメントとし
て焼結工程なしに圧縮成形することが知られてお
り、その際の導出用リード線に汎用の銅金属リー
ド線に予め耐熱性シリコンワニスを塗布してコン
デンサエレメント中に埋没することも公知である
（特開昭51−25756号公報）。 However, to form a water-repellent coating on the anode lead B, for example, the capacitor element A and the anode lead B are immersed in a liquid water-repellent material, and then the water-repellent material adhering only to the capacitor element A is washed and removed. However, the water repellent material impregnated deep into the capacitor element A cannot be removed by simple cleaning. Therefore, since the product must be immersed in the cleaning solution for a long time, workability is significantly impaired, making it difficult to apply it to a mass production process. In addition, it is known that solid electrolytic capacitor elements are compression molded without a sintering process, and in this case heat-resistant silicone varnish is applied to general-purpose copper metal lead wires beforehand to form solid electrolytic capacitor elements. It is also known that it is buried (Japanese Unexamined Patent Publication No. 51-25756).
しかし、このような非焼結型コンデンサエレメ
ントは高純度の金属粉末が要求されるなど実用上
の問題があつた。 However, such non-sintered capacitor elements have had practical problems, such as the requirement for high-purity metal powder.
本発明はこのような点に鑑み、撥水性部材によ
つてコンデンサエレメント面から導出された陽極
リード部分への半導体層の這い上り形成を抑制で
き、かつ撥水性部材のコンデンサエレメントの深
層部への浸み込みを確実に防止できる固体電解コ
ンデンサの製造方法を提供するもので、以下その
一製造方法について第２図〜第５図を参照して説
明する。 In view of these points, the present invention is capable of suppressing the formation of a semiconductor layer creeping up to the anode lead portion led out from the surface of the capacitor element by the water-repellent member, and also prevents the water-repellent member from forming in the deep part of the capacitor element. A method for manufacturing a solid electrolytic capacitor that can reliably prevent seepage is provided, and one manufacturing method will be described below with reference to FIGS. 2 to 5.
まず、第２図に示すように、弁作用を有する金
属粉末を角柱状に加圧成形し焼結してコンデンサ
エレメント１を形成する。一方、第３図に示すよ
うに、弁作用を有する金属部材例えば金属線より
なる陽極リード２の一端部を例えば液状の撥水性
部材に浸漬し、引上げた後、加熱処理することに
より、撥水性被膜３を形成する。次に、第４図に
示すように、コンデンサエレメント１の側面に陽
極リード２を、撥水性被膜３がコンデンサエレメ
ント面１ａからの導出部分に位置するように当接
させる。そして、溶接電極４，４にて陽極リード
２をコンデンサエレメント１に押圧させた状態に
おいて通電することにより、それぞれを溶接す
る。次に、第５図に示すように、通常の方法によ
り、コンデンサエレメント１の周面に、酸化層、
半導体層を介して電極引出し層５を形成する。そ
して陽極リード２の導出端に第１の外部リード部
材６を溶接すると共に、第２の外部リード部材７
を電極引出し層５に半田付けする。然る後、コン
デンサエレメント１の全周面を樹脂材８にてモー
ルド被覆することにより固体電解コンデンサを得
る。 First, as shown in FIG. 2, a capacitor element 1 is formed by pressure-forming metal powder having a valve action into a prismatic shape and sintering it. On the other hand, as shown in FIG. 3, one end of the anode lead 2 made of a metal member such as a metal wire having a valve action is immersed in, for example, a liquid water-repellent material, pulled up, and heat-treated to make it water-repellent. A coating 3 is formed. Next, as shown in FIG. 4, the anode lead 2 is brought into contact with the side surface of the capacitor element 1 so that the water-repellent coating 3 is located at the portion leading out from the capacitor element surface 1a. Then, by applying electricity while the anode lead 2 is pressed against the capacitor element 1 using the welding electrodes 4, 4, welding is performed. Next, as shown in FIG.
An electrode lead layer 5 is formed via the semiconductor layer. Then, the first external lead member 6 is welded to the lead-out end of the anode lead 2, and the second external lead member 7 is welded to the lead-out end of the anode lead 2.
is soldered to the electrode lead layer 5. Thereafter, the entire circumferential surface of the capacitor element 1 is molded and covered with a resin material 8 to obtain a solid electrolytic capacitor.
このように陽極リード２のコンデンサエレメン
ト面１ａからの導出部分にはコンデンサエレメン
ト１に半導体層を形成するに先立つて、撥水性被
膜３が形成されているので、それの表面に無数の
ダイス傷が形成されていても、コンデンサエレメ
ント１の半導体母液への浸漬工程において、半導
体母液が陽極リード部分に這い上つて付着するこ
とを防止できる。従つて、第１の外部リード部材
６を陽極リード２に溶接しても、漏洩電流の増
加、電極短絡などの不良発生を効果的に減少でき
る。 In this way, the water-repellent coating 3 is formed on the part of the anode lead 2 leading out from the capacitor element surface 1a before the semiconductor layer is formed on the capacitor element 1, so there are countless die scratches on the surface of the water-repellent coating 3. Even if it is formed, it is possible to prevent the semiconductor mother liquor from creeping up and adhering to the anode lead portion during the step of dipping the capacitor element 1 into the semiconductor mother liquor. Therefore, even if the first external lead member 6 is welded to the anode lead 2, defects such as an increase in leakage current and an electrode short circuit can be effectively reduced.
又、陽極リード２における撥水性被膜３は陽極
リード２のコンデンサエレメント１への溶接に先
立つて形成されているので、コンデンサエレメン
ト１に撥水性部材が含浸されることは全くない。
このために、それの除去操作を完全に省略できる
こともあつて、作業能率を著しく改善できる。 Furthermore, since the water-repellent coating 3 on the anode lead 2 is formed prior to welding the anode lead 2 to the capacitor element 1, the capacitor element 1 is never impregnated with the water-repellent material.
Therefore, the removal operation can be completely omitted, and work efficiency can be significantly improved.
しかも、陽極リード２に形成されている撥水性
被膜３はその厚みが例えば３μｍ以下と極めて薄
いために、機械的衝撃などにより簡単に破壊させ
ることができる。このために、陽極リード２はコ
ンデンサエレメント１に、撥水性被膜３をわざわ
ざ除去することなく、そのままの状態で溶接する
ことができる。 Furthermore, since the water-repellent coating 3 formed on the anode lead 2 has a very thin thickness of, for example, 3 μm or less, it can be easily destroyed by mechanical impact or the like. For this reason, the anode lead 2 can be welded to the capacitor element 1 without removing the water-repellent coating 3 as it is.
次に具体的実施例について説明する。タンタル
粉末を４×４×２tmmの角柱状に加圧成形し焼結
してコンデンサエレメントを形成する。一方、
0.5φmmのタンタル線（陽極リード）に、一端か
ら５mmの範囲内にダイキン株式会社製の商品名ダ
イフリーFS−126（弗素系樹脂）を浸漬塗布する
と共に、250℃にて10分間加熱することにより撥
水性被膜を形成する。そして、コンデンサエレメ
ントに陽極リードを、コンデンサエレメント面か
ら撥水性被膜が３mm突出するように溶接する。以
下通常の方法にてタンタル固体電解コンデンサを
製作した処、半導体母液の陽極リードへの這い上
り付着は全く認められなかつた。又、コンデンサ
エレメントへの撥水性部材の浸み込みも全くな
く、所望の容量特性が得られた。さらには陽極リ
ードのコンデンサエレメントに対する溶接強度は
充分であり、陽極リードを側方に引張つても溶接
はずれは発生しなかつた。 Next, specific examples will be described. A capacitor element is formed by pressing tantalum powder into a prismatic shape of 4 x 4 x 2 t mm and sintering it. on the other hand,
Dip-coat Daikin Corporation's product name Daifree FS-126 (fluorine-based resin) on a 0.5φmm tantalum wire (anode lead) within 5mm from one end, and heat it at 250℃ for 10 minutes. forms a water-repellent film. Then, the anode lead is welded to the capacitor element so that the water-repellent coating protrudes 3 mm from the surface of the capacitor element. When a tantalum solid electrolytic capacitor was fabricated using a conventional method, no semiconductor mother liquor was observed to creep up and adhere to the anode lead. Further, the water-repellent material did not seep into the capacitor element at all, and desired capacitance characteristics were obtained. Furthermore, the strength of welding the anode lead to the capacitor element was sufficient, and no welding occurred even when the anode lead was pulled laterally.
尚、本発明において、コンデンサエレメントは
タンタルの他、アルミニウム、チタン、ジルコニ
ウム、ハフニウム、ニオブなどにて構成すること
もできるし、２種以上の金属を混合しない合金化
して使用することもできる。又、その形状は角柱
状の他、円柱状など任意に設定できる。又、陽極
リードもタンタルの他、弁作用を有する任意の金
属部材を使用できる。それに予め形成する撥水性
被膜は弗素系樹脂の他、シリコン系樹脂なども利
用できるし、それの形成は浸漬による他、スプレ
ーなどによつて行うこともできる。 In the present invention, the capacitor element can be made of aluminum, titanium, zirconium, hafnium, niobium, etc. in addition to tantalum, or it can be used as an alloy of two or more metals without mixing. Further, its shape can be arbitrarily set such as a prismatic shape or a cylindrical shape. In addition to tantalum, any metal member having a valve action can be used for the anode lead. The water-repellent coating that is preformed thereon can be made of fluorine-based resin or silicone-based resin, and can be formed by spraying or the like in addition to dipping.
以上のように本発明によれば、予め陽極リード
に撥水性被膜を形成することによつて、コンデン
サエレメント面から導出された陽極リード部分へ
の半導体層の這い上り形成を抑制でき、かつ撥水
性部材のコンデンサエレメントへの浸み込みを確
実に防止でき、特性面、作業面の改善を計ること
ができる。 As described above, according to the present invention, by forming a water-repellent coating on the anode lead in advance, it is possible to suppress the formation of a semiconductor layer creeping up to the anode lead portion led out from the surface of the capacitor element, and to provide water-repellent coating. It is possible to reliably prevent parts from seeping into the capacitor element, and it is possible to improve characteristics and workability.
第１図は従来の固体電解コンデンサの側断面
図、第２図〜第５図は本発明方法の説明図であつ
て、第２図はコンデンサエレメントの側断面図、
第３図は陽極リードに撥水性被膜を形成した状態
を示す側断面図、第４図はコンデンサエレメント
に陽極リードを溶接した状態を示す側断面図、第
５図は完成状態を示す側断面図である。
図中、１はコンデンサエレメント、２は陽極リ
ード、３は撥水性被膜である。
FIG. 1 is a side sectional view of a conventional solid electrolytic capacitor, FIGS. 2 to 5 are explanatory diagrams of the method of the present invention, and FIG. 2 is a side sectional view of a capacitor element.
Figure 3 is a side sectional view showing the state in which a water-repellent coating is formed on the anode lead, Figure 4 is a side sectional view showing the state in which the anode lead is welded to the capacitor element, and Figure 5 is a side sectional view showing the completed state. It is. In the figure, 1 is a capacitor element, 2 is an anode lead, and 3 is a water-repellent coating.
Claims (1)
形し焼結するコンデンサエレメントの形成工程、 弁作用を有する金属部材から成る陽極リードの
所定位置に撥水性被膜を形成する工程、前記コン
デンサエレメントと前記陽極リードとを、撥水性
被膜がコンデンサエレメントの上面側に導出し且
つその側面に当接する位置で通電して溶接する工
程、及び前記コンデンサエレメントの周面に酸化
層、半導体層及び電極引出し層を形成する工程と
を含む固体電解コンデンサの製造方法。[Claims] 1. A process for forming a capacitor element by press-molding and sintering a metal powder having a valve action into a desired shape, and forming a water-repellent coating at a predetermined position of an anode lead made of a metal member having a valve action. a step of welding the capacitor element and the anode lead by applying electricity at a position where the water-repellent coating is led out to the upper surface side of the capacitor element and comes into contact with the side surface thereof; and an oxide layer on the circumferential surface of the capacitor element; A method for manufacturing a solid electrolytic capacitor, comprising a step of forming a semiconductor layer and an electrode lead layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16955081A JPS5870520A (en) | 1981-10-22 | 1981-10-22 | Method of producing solid electrolytic condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16955081A JPS5870520A (en) | 1981-10-22 | 1981-10-22 | Method of producing solid electrolytic condenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5870520A JPS5870520A (en) | 1983-04-27 |
| JPS6161693B2 true JPS6161693B2 (en) | 1986-12-26 |
Family
ID=15888547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16955081A Granted JPS5870520A (en) | 1981-10-22 | 1981-10-22 | Method of producing solid electrolytic condenser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870520A (en) |
-
1981
- 1981-10-22 JP JP16955081A patent/JPS5870520A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5870520A (en) | 1983-04-27 |
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