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JPS6161702B2 - - Google Patents
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JPS6161702B2 - - Google Patents

Info

Publication number
JPS6161702B2
JPS6161702B2 JP56007843A JP784381A JPS6161702B2 JP S6161702 B2 JPS6161702 B2 JP S6161702B2 JP 56007843 A JP56007843 A JP 56007843A JP 784381 A JP784381 A JP 784381A JP S6161702 B2 JPS6161702 B2 JP S6161702B2
Authority
JP
Japan
Prior art keywords
conductors
conductor
pellet
pellets
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56007843A
Other languages
Japanese (ja)
Other versions
JPS57122550A (en
Inventor
Satoshi Mikami
Masami Fujii
Akira Nishi
Kenji Iimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56007843A priority Critical patent/JPS57122550A/en
Publication of JPS57122550A publication Critical patent/JPS57122550A/en
Publication of JPS6161702B2 publication Critical patent/JPS6161702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07651Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07653Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 本発明に絶縁板上に複数個の半導体素子を載置
し所定の回路結線を施したモジユール構造の半導
体装置の絶縁板上での部品搭載構造に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a component mounting structure on an insulating plate of a semiconductor device having a modular structure in which a plurality of semiconductor elements are mounted on an insulating plate and predetermined circuit connections are made.

サイリスタやダイオード等の複数個の半導体素
子(以下、ペレツトと略記)を絶縁板上に載置
し、所定の回路結線を施し、1個のケースに収納
したモジユール化した半導体装置は個々のペレツ
トがそれぞれケースに収納された、所謂デイスク
リード構造のサイリスタやダイオードを所定の回
路結線するものに較べて、実装が簡単であるこ
と、小型軽量であること等の利点を有しているた
め、最近、脚光をあびている。
A modular semiconductor device is made by placing multiple semiconductor elements (hereinafter referred to as pellets) such as thyristors and diodes on an insulating plate, making predetermined circuit connections, and storing them in a single case. Compared to thyristors and diodes of a so-called discreed structure, each housed in a case, and connected to a predetermined circuit, it has advantages such as being easier to implement and being smaller and lighter. It's in the spotlight.

第1図は従来のモジユール構造の半導体装置1
00を示している。回路としては6個のダイオー
ドペレツトを用いた3相全波整流回路となつてい
る。
Figure 1 shows a conventional modular structure semiconductor device 1.
00 is shown. The circuit is a three-phase full-wave rectifier circuit using six diode pellets.

第1図において、101はアルミナ等の絶縁板
であり、その下面には半田等の鑞材102を用い
て銅等の板状の冷却体103が設けられている。
また、上面には、同じく半田等の鑞材104を介
して銅等の板状の導電体105a〜105eが設
けられている。その内、導電体105a〜105
cは交流端子用であり、105d,105eは直
流端子用で、外部接続端子106a〜106eが
やはり半田等の鑞材107により設けられてい
る。導電体105d,105e上には半田等の鑞
材108によりダイオード作用を持つペレツト1
09a〜109fが設けられている。ペレツト1
09a〜109cが同一整流方向になつており、
ペレツト109d〜109fが同一整流方向にな
つているが、ペレツト109a〜109cの整流
方向とペレツト109d〜109fの整流方向は
反対方向になつている。ペレツト109aと10
9d、109bと109e、109cと109f
に対して、それぞれ接続体110a〜110cが
半田等の鑞材111を用いて設けられ、各接続体
110a〜110cの端部は導電体106a〜1
06cと半田等の鑞材112によつて接続されて
いる。
In FIG. 1, reference numeral 101 is an insulating plate made of alumina or the like, and a plate-shaped cooling body 103 made of copper or the like is provided on the lower surface of the plate using a solder material 102 such as solder.
Further, on the upper surface, plate-shaped conductors 105a to 105e made of copper or the like are provided via a brazing material 104 such as solder. Among them, conductors 105a to 105
C is for an AC terminal, 105d and 105e are for a DC terminal, and external connection terminals 106a to 106e are also provided with a solder material 107 such as solder. A pellet 1 having a diode effect is formed on the conductors 105d and 105e by a soldering material 108 such as solder.
09a to 109f are provided. pellet 1
09a to 109c are in the same rectification direction,
Although the pellets 109d to 109f are in the same rectifying direction, the rectifying direction of the pellets 109a to 109c is opposite to the rectifying direction of the pellets 109d to 109f. Pellet 109a and 10
9d, 109b and 109e, 109c and 109f
, connecting bodies 110a to 110c are provided using a brazing material 111 such as solder, and the ends of each connecting body 110a to 110c are connected to conductors 106a to 106a.
06c by a solder material 112 such as solder.

各ペレツト109a〜109fと導電体105
d,105eおよび接続体110a〜110cと
は各ペレツト109a〜109fの上下主表面に
おいて各鑞材108,111により低抵抗接触し
ていることになる。各ペレツト109a〜109
fはシリコーンゴム等の表面安定化材が塗布さ
れ、冷却体103上に気密に固着されるケースに
よつて封止収納される。
Each pellet 109a to 109f and conductor 105
d, 105e and the connecting bodies 110a-110c are in low-resistance contact through the respective brazing materials 108, 111 on the upper and lower main surfaces of each pellet 109a-109f. Each pellet 109a-109
F is coated with a surface stabilizing material such as silicone rubber, and is sealed and housed in a case that is airtightly fixed onto the cooling body 103 .

ケース内にはエポキシ樹脂等の絶縁性樹脂が充
填されることもある。尚、第1図にはこれら表面
安定化材、ケース、絶縁性樹脂は示されていな
い。
The inside of the case may be filled with an insulating resin such as epoxy resin. Note that the surface stabilizing material, case, and insulating resin are not shown in FIG.

外部接続端子106a〜106eはケースの上
部から突出し、ここに、リード線が接続される。
外部接続端子106a〜106cは交流の入力側
であり、106d,106eは直流の出力側であ
る。
External connection terminals 106a to 106e protrude from the top of the case, and lead wires are connected thereto.
External connection terminals 106a to 106c are on the AC input side, and 106d and 106e are on the DC output side.

モジユールにおいては、絶縁板101上に多数
の部品を鑞付していくため、部品数はできるだけ
少なく、かつ、共用できることが望ましい。
In the module, many parts are brazed onto the insulating plate 101, so it is desirable that the number of parts be as small as possible and that they can be shared.

しかるに、第1図に示す従来装置においてはペ
レツト109a〜109fが直流側の導電体10
5d,105e上に設けられているため、部品数
が多く、また共用できないものが多く、また、そ
のための作業性も悪かつた。
However, in the conventional device shown in FIG.
5d and 105e, the number of parts was large, many of which could not be shared, and the workability was also poor.

それゆえ、本発明は単純構成で、作業性も良好
なモジユール構造の半導体装置を提供するにあ
る。
Therefore, an object of the present invention is to provide a semiconductor device having a modular structure, which has a simple structure and good workability.

本発明の特徴とするところは、ペレツトを交流
側の導電体上に設けたことにある。
A feature of the present invention is that the pellets are provided on the conductor on the AC side.

第2図は本発明になる3相全波整流回路を構成
している半導体装置200を示している。
FIG. 2 shows a semiconductor device 200 constituting a three-phase full-wave rectifier circuit according to the present invention.

第2図における半導体装置200は第1図にお
ける半導体装置100と同じく3相全波整流回路
となつており、大体、類似した材料が用いられて
いる。
The semiconductor device 200 in FIG. 2 is a three-phase full-wave rectifier circuit like the semiconductor device 100 in FIG. 1, and is made of similar materials.

第2図中、絶縁板201の下面には鑞材202
によつて冷却体203が設けられ、また、上面に
は鑞材204を介して導電体205a〜205e
が設けられている。導電体205a〜205cは
交流端子用であり、205d,205eは直流端
子用である。各導電体205a〜205eには外
部接続端子206a〜206eが鑞材207によ
り設けられている。導電体205a〜205c上
には鑞材208によりペレツト209a〜209
fが設けられている。ペレツト群209a〜20
9c、ペレツト群209d〜209fはペレツト
群内でそれぞれ同一整流方向でかつ、ペレツト群
同志では反対の整流方向となつている。接続体1
10a,110bは各ペレツト群のペレツト上面
と導電体205d,205eの間に鑞材211,
212によつて接続されている。勿論、各ペレツ
トと接続体は低抵抗接触である。表面安定化材、
ケースは第1図と同様、省略されている。
In FIG. 2, the bottom surface of the insulating plate 201 has a solder material
A cooling body 203 is provided with a cooling body 203, and conductors 205a to 205e are provided on the upper surface via a solder material 204.
is provided. The conductors 205a to 205c are for AC terminals, and 205d and 205e are for DC terminals. External connection terminals 206a to 206e are provided to each of the conductors 205a to 205e using a solder material 207. Pellets 209a to 209 are formed on the conductors 205a to 205c by a solder material 208.
f is provided. Pellet group 209a-20
9c and the pellet groups 209d to 209f are rectified in the same direction within the pellet group, and in opposite rectifying directions among the pellet groups. Connection body 1
10a, 110b are solder materials 211,
212. Of course, each pellet and connector are low resistance contacts. surface stabilizing material,
The case is omitted as in FIG.

第2図に示した本発明装置200が第1図に示
す従来装置100に較べて、大きく異なるところ
は、ペレツト209a〜209fが、交流側の導
電体205a〜205c上に搭載されていること
である。
The main difference between the device 200 of the present invention shown in FIG. 2 and the conventional device 100 shown in FIG. 1 is that pellets 209a to 209f are mounted on conductors 205a to 205c on the AC side. be.

このため、本発明装置200では各ペレツト2
09a〜209cと導電体205a〜205eお
よび接続体210a,210bとの鑞付個数およ
び接続体数が1個ずつ、低減している。
Therefore, in the device 200 of the present invention, each pellet 2
The number of brazed objects and the number of connected objects between the conductors 09a to 209c, the conductors 205a to 205e, and the connecting bodies 210a and 210b are reduced by one.

また、導電体205a〜205cには、ペレツ
ト209a〜209fが2個ずつ搭載された単純
構成となつており、作業時の位置決めも容易であ
る。発熱体は各ペレツトであるが、導電体205
a〜205c上に2個ずつペレツトが配されてい
ることから、ペレツトを3個ずつ有していた第1
図に示す従来装置100に較べて、導電体の絶縁
板201を介しての冷却体203への放熱の負担
も軽く、その分だけ、放熱性も良好である。
Further, the conductors 205a to 205c have a simple structure in which two pellets 209a to 209f are mounted each, and positioning during work is easy. The heating element is each pellet, but the conductor 205
Since two pellets are placed on each of a to 205c, the first one, which had three pellets each,
Compared to the conventional device 100 shown in the figure, the burden of heat radiation to the cooling body 203 via the conductive insulating plate 201 is lighter, and the heat radiation performance is also better accordingly.

第2図に示すように、直流側の導電体205
d,205eを両側に置き、交流側の導電体20
5a〜205cを中央に置くと、導電体205a
と205c、205dと205eは同一形状のも
のを使用できる。即ち、同一形状の導電体をプレ
ス等で打抜き、それらの表裏を逆にして用いれ
ば、導電体205aは205c、205dは20
5eとしても用いられるのである。従つて、部品
点数が極めて少なくて済む利点もある。
As shown in FIG. 2, a conductor 205 on the DC side
d, 205e on both sides, and conductor 20 on the AC side.
When 5a to 205c are placed in the center, the conductor 205a
205c, 205d and 205e can be of the same shape. That is, if conductors of the same shape are punched out using a press or the like and used with their front and back sides reversed, the conductor 205a becomes 205c, and the conductor 205d becomes 20
It is also used as 5e. Therefore, there is an advantage that the number of parts can be extremely small.

第2図に示す導電体配置は各ペレツトに表面安
定化材を塗布する場合にも有利である。
The conductor arrangement shown in FIG. 2 is also advantageous when applying a surface stabilizer to each pellet.

第3図は、表面安定化材213の塗布状態を示
している。
FIG. 3 shows the state in which the surface stabilizing material 213 is applied.

表面安定化材213は粘性のある流体状で塗布
されたのち、硬化されるが、流体状で塗布される
時、直流側の導電体205d,205eは、表面
安定化材213の流動を阻止するため、第3図の
ように、盛り上り、各ペレツト209a〜209
fの露出表面を確実に覆うことになり、各ペレツ
ト209a〜209fの特性低下は防止できる。
The surface stabilizing material 213 is applied in the form of a viscous fluid and then cured, but when the surface stabilizing material 213 is applied in the form of a fluid, the conductors 205d and 205e on the DC side prevent the surface stabilizing material 213 from flowing. Therefore, as shown in FIG. 3, each pellet 209a to 209
This ensures that the exposed surface of pellets 209a to 209f is covered, thereby preventing deterioration of the characteristics of each pellet 209a to 209f.

尚、第3図aは上面図であるが、表面安定化材
213の塗布領域には点を付した。
Incidentally, although FIG. 3a is a top view, dots are added to areas where the surface stabilizing material 213 is applied.

第1図に示した従来装置ではペレツト109a
〜109fに対する表面安定化材の流出を阻止す
る部材が存在しないため、特性上の劣下がしばし
ば存在したが、第2図に示す本発明装置ではこの
ような問題は存在しない。
In the conventional device shown in FIG.
Since there is no member to prevent the surface stabilizing material from flowing out to ~109f, deterioration in properties has often existed, but this problem does not exist in the device of the present invention shown in FIG.

以上の実施例では、ペレツトとしてダイオード
作用をなすものをもつて説明したが、サイリスタ
作用をなすものであつてもよく、また、片方のペ
レツト群がダイオード作用をなすもの、残りの群
がサイリスタ作用をなすものであつてもよい。
In the above embodiments, the pellets have a diode effect, but they may also have a thyristor effect, or one group of pellets may have a diode effect, and the remaining pellets have a thyristor effect. It may be something that constitutes.

また、3相全波整流回路を構成するもので説明
したが、その他のものであつてもさしつかえな
い。
Further, although the explanation has been made using a device that constitutes a three-phase full-wave rectifier circuit, other devices may also be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体装置を示しており、aは
上面図、bはaのA−A切断線に沿つた縦断面
図、cはaのB−B切断線に沿つた横断面図、第
2図は本発明の一実施例になる半導体装置を示し
ており、aは上面図、bはaのC−C切断線に沿
つた縦断面図、第3図は第2図に示す本発明装置
において、表面安定化材を塗布した状態を示した
もので、aは上面図、bはaのD−D切断線に沿
つた縦断面図である。 201……絶縁板、203……冷却体、205
a〜205e……導電体、206a〜206e…
…外部接続端子、209a〜209f……ペレツ
ト、210a,210b……接続体、202,2
04,207,208,211,212……鑞
材。
FIG. 1 shows a conventional semiconductor device, in which a is a top view, b is a vertical cross-sectional view taken along the line A-A of a, and c is a cross-sectional view taken along the line B-B of a. FIG. 2 shows a semiconductor device according to an embodiment of the present invention, in which a is a top view, b is a vertical sectional view taken along the line C--C of a, and FIG. 3 is a book shown in FIG. 2. In the device of the invention, a state in which a surface stabilizing material is applied is shown, in which a is a top view and b is a longitudinal sectional view taken along the cutting line DD of a. 201... Insulating plate, 203... Cooling body, 205
a to 205e... conductor, 206a to 206e...
...External connection terminal, 209a-209f...Pellet, 210a, 210b...Connection body, 202,2
04,207,208,211,212...Brazing material.

Claims (1)

【特許請求の範囲】 1 交流の相数に見合つた数の複数個の導電体が
絶縁板上に設けられ、整流方向を違えた少なくと
も2個ずつの半導体素子は各半導体素子の一方の
主表面が上記各導電体に低抵抗接触するように設
けられ、上記各導電体上にあつてしかも同一整流
方向となつている上記各半導体素子の他方の主表
面に少なくとも2本の接続体の各々が低抵抗接触
するように設けられ、上記各接続体は上記絶縁板
上に設けられた直流側の導電体と接続されている
ことを特徴とする半導体装置。 2 特許請求の範囲第1項において、直流側の導
電体は交流側の導電体を挾んでその両側にあるこ
とを特徴とする半導体装置。
[Claims] 1. A plurality of conductors, the number of which corresponds to the number of alternating current phases, are provided on an insulating plate, and at least two semiconductor elements with different rectification directions are arranged on one main surface of each semiconductor element. are provided in low resistance contact with each of the conductors, and each of at least two connecting bodies is provided on the other main surface of each of the semiconductor elements which are on each of the conductors and are in the same rectifying direction. 1. A semiconductor device, wherein the connecting bodies are provided in a low-resistance contact manner, and each of the connecting bodies is connected to a DC-side conductor provided on the insulating plate. 2. A semiconductor device according to claim 1, characterized in that the conductor on the DC side is located on both sides of the conductor on the AC side.
JP56007843A 1981-01-23 1981-01-23 Semiconductor device Granted JPS57122550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56007843A JPS57122550A (en) 1981-01-23 1981-01-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56007843A JPS57122550A (en) 1981-01-23 1981-01-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57122550A JPS57122550A (en) 1982-07-30
JPS6161702B2 true JPS6161702B2 (en) 1986-12-26

Family

ID=11676887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56007843A Granted JPS57122550A (en) 1981-01-23 1981-01-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57122550A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939059A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor device
JPS5954168U (en) * 1982-09-30 1984-04-09 三菱電機株式会社 Arc welding machine power controller
JPS61139054A (en) * 1984-12-11 1986-06-26 Toshiba Corp semiconductor equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141514A (en) * 1974-10-07 1976-04-07 Nippon Musical Instruments Mfg

Also Published As

Publication number Publication date
JPS57122550A (en) 1982-07-30

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