JPS6199805A - Step measuring device - Google Patents
Step measuring deviceInfo
- Publication number
- JPS6199805A JPS6199805A JP22125384A JP22125384A JPS6199805A JP S6199805 A JPS6199805 A JP S6199805A JP 22125384 A JP22125384 A JP 22125384A JP 22125384 A JP22125384 A JP 22125384A JP S6199805 A JPS6199805 A JP S6199805A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodetector
- coherent light
- interference
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、反射面が焦点位置にあることを検出し、特に
微小な段差あるいは膜厚を測定する段差測定装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a step measuring device that detects the presence of a reflective surface at a focal position and measures, in particular, minute steps or film thickness.
近年、半導体装置の集積化が進んだため、半導体装置の
表面の構造はより微細なものになってきている。したが
って半導体装置の表面構造の計測において、ミクロンオ
ーダの横方向の分解能が要求されるようになった。さら
に計測した試料を元の製造ラインに戻すために、非接触
、非破壊検査であることが望まれる。表面構造の計測、
すなわち段差を測定する方法として、触針法、光の干渉
縞を観測する方法、顕微鏡の焦点位置を利用する方法、
光切断法、走査型電子顕微鏡による観察、先触針法など
があるが、上記の各方法はいずれもつぎに示すような欠
点をそれぞれ有している。段差感度がよい触針法は、試
料と針先とが接触し、なおかつ針先が細いため試料に強
い圧力がかかり、試料の表面が破壊されるおそれがある
。また非接触であっても、走査型電子顕微鏡による観察
においては、試料の電子線による損傷やチャージアップ
などがおこり一種の破壊検査になる。光を使う他の方法
は非接触、非破壊検査となり得るが、光の干渉縞を観測
する方法では干渉縞のずれから段差を測定するため、ミ
クロンオーダで表面構造が変化する場合にずれの測定が
困難になり段差の計測は難しい。顕微鏡の焦点位置を利
用する方法は、段差の上下に対して顕微鏡の焦点位置の
調整をそれぞれ目視で行い、焦点位置の距離の差から段
差の高さを求める。これは目視で行うため個人差が生じ
正確な測定が困難である。また光切断法においては、段
差にスリット光を斜めから照射し、スリット光の影の長
さから段差の高さを推定するものである。この方法も光
を斜めから照射する必要があるので横方向の分解能がな
い。一方、先触針法は横方向の分解能がミクロンオーダ
になり得るので半導体装置の測定要求を満たす可能性が
あり、特開昭58−176505号に示されている検出
装置は、絞り込んだ光を探触針としているから横方向に
十分な分解能をもち、目的は変位を検出するものである
が、試料を横方向に走査すれば段差の測定装置になり得
る。しかしこの装置は試料面で反射してきた光の強度分
布が光軸に対して対称でなければ正確な測定を行うこと
ができなし・。In recent years, as the integration of semiconductor devices has progressed, the surface structures of semiconductor devices have become finer. Therefore, in measuring the surface structure of semiconductor devices, lateral resolution on the order of microns has come to be required. Furthermore, non-contact, non-destructive testing is desirable in order to return the measured samples to the original production line. Measurement of surface structure,
In other words, methods for measuring differences in level include the stylus method, the method of observing interference fringes of light, the method of using the focus position of a microscope,
There are optical cutting methods, observation using a scanning electron microscope, tipped needle methods, etc., but each of the above methods has the following drawbacks. In the stylus method, which has good step sensitivity, the sample and the tip of the stylus are in contact with each other, and because the tip of the stylus is thin, strong pressure is applied to the sample, which may destroy the surface of the sample. Furthermore, even in a non-contact manner, observation using a scanning electron microscope is a type of destructive inspection, as damage and charge-up to the sample may occur due to the electron beam. Other methods that use light can be non-contact, non-destructive inspections, but the method that observes optical interference fringes measures the level difference from the deviation of the interference fringes, so it is possible to measure deviations when the surface structure changes on the micron order. This makes it difficult to measure the difference in level. In the method of using the focus position of the microscope, the focus position of the microscope is visually adjusted for the upper and lower sides of the step, and the height of the step is determined from the difference in distance between the focus positions. Since this is done visually, individual differences occur and accurate measurement is difficult. In addition, in the light cutting method, a slit light is irradiated obliquely onto a step, and the height of the step is estimated from the length of the shadow of the slit light. This method also requires irradiation of light from an oblique direction, so there is no lateral resolution. On the other hand, since the lateral resolution of the tip probe method can be on the order of microns, it has the potential to meet the measurement requirements of semiconductor devices. Since it is used as a probe needle, it has sufficient resolution in the lateral direction, and its purpose is to detect displacement, but it can also be used as a step measurement device if the sample is scanned in the lateral direction. However, this device cannot perform accurate measurements unless the intensity distribution of the light reflected from the sample surface is symmetrical with respect to the optical axis.
本発明は、横方向の分解能がミクロンオーダであり、反
射光の強度分布に乱れが生じた場合でも、安定した段差
測定が行える非接触、非破壊の段差測定装置を得ること
を目的とする。An object of the present invention is to provide a non-contact, non-destructive level difference measuring device that has a lateral resolution on the order of microns and can perform stable level difference measurements even when the intensity distribution of reflected light is disturbed.
本発明は、コリメートした光を微小スポットに絞って測
定面に照射し、上記測定面が絞った尤の焦点面にあるか
否かを光の干渉を用いて高精度に検出する。第4図は反
射面と対物レンズ2との距離が変化したとき、対物レン
ズ2から戻り光の波面がどのようになるかを示している
。反射面1−1は対物レンズ2の焦点位置にあり、戻り
光の嫁面は光軸に対して垂直である。反射面1−2およ
び1−3は焦点位置からはずれており、それぞれの波面
は彎曲し4−2および4−3のようになる。このため光
軸に垂直な波面を持つ参照光をそれぞれ干渉させたとき
反射面が1−1のときは干渉縞が現われないが、反射面
が焦点位置から外れているときは光軸に垂直な面に対し
て光路差をもつため、第5図に示すような同心円状の干
渉縞を生じる。ここで参照光の位相を変えた場合の干渉
縞の変化を考える。参照光の位相は全周同じように変わ
るものとする。反射面が1−1にあるときは参照光の位
相の変化に伴って一様に明暗の変化をする。一方、反射
面が1−2や1−3のように焦点位置からずれている場
合には、参照光の位相が変化すると干渉縞の暗い部分は
明るくなり明るい部分は暗くなるという変化を繰返す。The present invention focuses collimated light into a minute spot and irradiates it onto a measurement surface, and uses light interference to detect with high accuracy whether or not the measurement surface is on the narrowed-down correct focal plane. FIG. 4 shows how the wavefront of the light returned from the objective lens 2 changes when the distance between the reflecting surface and the objective lens 2 changes. The reflective surface 1-1 is located at the focal point of the objective lens 2, and the bride surface of the returned light is perpendicular to the optical axis. The reflective surfaces 1-2 and 1-3 are deviated from the focal position, and their respective wavefronts are curved as shown in 4-2 and 4-3. Therefore, when the reference beams with wavefronts perpendicular to the optical axis are caused to interfere with each other, no interference fringes appear when the reflecting surface is 1-1, but when the reflecting surface is away from the focal position, the interference fringes appear perpendicular to the optical axis. Since there is an optical path difference with respect to the surface, concentric interference fringes as shown in FIG. 5 are produced. Let us now consider the change in interference fringes when the phase of the reference light is changed. It is assumed that the phase of the reference light changes in the same way all around. When the reflecting surface is located at 1-1, the brightness changes uniformly as the phase of the reference light changes. On the other hand, when the reflecting surface is deviated from the focal position like 1-2 or 1-3, when the phase of the reference light changes, the dark parts of the interference fringes become brighter and the brighter parts become dark, which is repeated.
上記の干渉縞の変化を検知し焦点位置を検出して段差の
測定を行う。また干渉縞の状態の判定にヘテロダイン干
渉法を使用し、参照光に周波数変位を生じた光を用い、
上記周波数変位の周波数の変化で干渉縞の明暗を判定し
、焦点位置の検出お゛よび段差の測定を行う。すなわち
、本発明による段差測定装置は、コヒーレント光と、該
コヒーレント光を分割する光分割素子と、分割した第1
のコヒーレント光を測定試料表面上で微小スポットに収
束する収束光学系と、該収束光学系と上記測定試料表面
との相対位置を変化させる移動台と、分割した第2のコ
ヒーレント光の光路長または周波数を変化させる機構と
、上記測定試料表面から反射された第1のコヒーレント
光を集光し、上記光路長または周波数を変化させた第2
のコヒーレント光を干渉させ、干渉したときに生じる干
渉縞を検出する光検出器と、該光検出器の信号を処理す
る信号処理回路とを備えたものである。The difference in level is measured by detecting the change in the interference fringes and detecting the focal position. In addition, heterodyne interferometry is used to determine the state of interference fringes, using light with a frequency shift in the reference light.
The brightness or darkness of the interference fringes is determined based on the frequency change of the frequency displacement, and the focal position is detected and the step is measured. That is, the level difference measuring device according to the present invention includes coherent light, a light splitting element that splits the coherent light, and a first light splitting element that splits the coherent light.
a converging optical system that converges the coherent light of 1 to a minute spot on the surface of the measurement sample; a movable stage that changes the relative position of the convergence optical system and the surface of the measurement sample; and an optical path length of the divided second coherent light or a mechanism for changing the frequency; and a second mechanism for condensing the first coherent light reflected from the surface of the measurement sample and changing the optical path length or frequency.
The device is equipped with a photodetector that interferes with coherent light and detects interference fringes generated when the interference occurs, and a signal processing circuit that processes the signal of the photodetector.
つぎに本発明の実施例を図面とともに説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明による段差測定装置の一実施例の構成を
示す図、第2図は上記実施例における光検出器光力の反
射面の位置に対する依存性を示す図、第3図は本発明の
他の実施例の構成を示す図である。FIG. 1 is a diagram showing the configuration of an embodiment of the level difference measuring device according to the present invention, FIG. 2 is a diagram showing the dependence of the optical power of the photodetector on the position of the reflecting surface in the above embodiment, and FIG. FIG. 7 is a diagram showing the configuration of another embodiment of the invention.
第1図において、レーザ光源5から出射したコヒーレン
ト光6をレンズ7−1.7−2およびピンホール8を用
いてコリメートする。コリメートされたコヒーレン]・
光9は光分割素子(例えば半透明鏡)10で振幅分割さ
れ、分割された第1のコヒーレント光は対物レンズ2に
よって微小スポットに絞られ、試料表面である反射面1
上に照射される。In FIG. 1, coherent light 6 emitted from a laser light source 5 is collimated using a lens 7-1, 7-2 and a pinhole 8. collimated coheren]・
The light 9 is amplitude-divided by a light splitting element (for example, a semi-transparent mirror) 10, and the divided first coherent light is narrowed down to a minute spot by the objective lens 2, and the reflected surface 1, which is the sample surface.
irradiated on top.
試料は3次元に移動可能な移動台11の上に設けられて
いる。反射面1で反射した光は光分割素子1゜を透過し
たのち干渉すべき光の片方になる。光分割素子10を透
過した第2のコヒーレント光は平面鏡12で反射されて
光分割素子1oに戻り、再び反射され干渉のためのもう
一方の光、参照光になる。The sample is placed on a moving stage 11 that can be moved in three dimensions. The light reflected by the reflecting surface 1 passes through the light splitting element 1° and becomes one of the lights to be interfered with. The second coherent light transmitted through the light splitting element 10 is reflected by the plane mirror 12, returns to the light splitting element 1o, and is reflected again to become the other light for interference, a reference light.
上記参照光の光路長を変化させるために、平面鏡12を
反射面の垂直方向に振動する電歪素子13で駆動する。In order to change the optical path length of the reference light, the plane mirror 12 is driven by an electrostrictive element 13 that vibrates in a direction perpendicular to the reflecting surface.
干渉光14は光分割素子15で分割され、反射された光
は光検出器17−1.17−2、透過した光は光検出器
16でそれぞれ検出される。光検出器16は広い受光面
積を持っており、干渉縞全体を受光することができ、光
検出器16の出力には受光量に比例する電圧が発生する
。電歪素子13による振動は正弦波状で、振幅は使用し
ているコヒーレント光の波長の数分の一以下である。周
波数はW。である。The interference light 14 is split by a light splitting element 15, the reflected light is detected by a photodetector 17-1, 17-2, and the transmitted light is detected by a photodetector 16, respectively. The photodetector 16 has a wide light-receiving area and can receive the entire interference fringe, and a voltage proportional to the amount of received light is generated at the output of the photodetector 16. The vibration caused by the electrostrictive element 13 is sinusoidal, and the amplitude is less than a fraction of the wavelength of the coherent light used. The frequency is W. It is.
信号処理回路18で光検出器16のWQの周波数の成分
だけを取出したのが第2図であり、(a)は対物レンズ
2と反射面1との距離が第4図1−3のように焦点距離
より短い場合を示し、(b)は第4図1−1のように焦
点距離と同じ場合を示し、(C)は第4図1−2のよう
に焦点距離より長い場合を示している。第2図はいずれ
も横軸および縦軸に同一のスケールを用いている。反射
面1が焦点位置にあるときは第2図(b)に示すように
信号の振幅が一番大きくなる。その理由は、光検出器1
6の受光面で干渉光の強度の位相がそろっているからで
ある。Figure 2 shows only the WQ frequency component of the photodetector 16 extracted by the signal processing circuit 18, and (a) shows that the distance between the objective lens 2 and the reflective surface 1 is as shown in Figure 4 1-3. (b) shows the case where it is the same as the focal length as shown in Fig. 4 1-1, and (C) shows the case where it is longer than the focal length as shown in Fig. 4 1-2. ing. In both figures, the same scale is used for the horizontal and vertical axes. When the reflecting surface 1 is at the focal point, the amplitude of the signal is the largest, as shown in FIG. 2(b). The reason is that the photodetector 1
This is because the phases of the intensities of the interference light are aligned on the light receiving surface 6.
反射面1が焦点位置からずれたときは干渉縞が生じて明
暗が交互に変化するため振幅が大きくならない。したが
って反射面lを移動台11によって上下に移動しながら
、光検出器16の出力のW。成分の振幅が最大になる移
動台1】の位置を検出する動作と、移動台11を横方向
に移動する動作とを交互に行い、上記移動台11の横方
向の移動距離に対して検出した高さをプロットすれば反
射面1の段差の測定が可能になる。信号処理装置18は
光検出器16の出力のW。の周波数成分を取出し、その
振幅の最大値を検出し、同時にその最大値が実現された
移動台11のx、y、z方向の位置を記憶する。When the reflective surface 1 deviates from the focal position, interference fringes are generated and the brightness and darkness change alternately, so the amplitude does not become large. Therefore, while the reflecting surface l is moved up and down by the movable table 11, the output W of the photodetector 16 is measured. The operation of detecting the position of the movable base 1 where the amplitude of the component is maximum and the operation of moving the movable base 11 in the lateral direction are performed alternately, and the detection is performed with respect to the lateral movement distance of the movable base 11. By plotting the height, it becomes possible to measure the difference in level of the reflective surface 1. The signal processing device 18 processes W of the output of the photodetector 16. The frequency component of is extracted, the maximum value of its amplitude is detected, and at the same time, the position of the movable table 11 in the x, y, and z directions where the maximum value is realized is stored.
本実施例においては干渉光14をさらに光分割素子15
で分割して光検出器17−1および17−2で検出する
。これら2つの検出器の受光面は小さく作られており、
干渉光の一部を受光する。光検出器17−1.17−2
の位置は光軸に垂直な平面内で光軸から等距離にならな
いように配置する。信号処理装置19は光検出器17−
1の出力と17−2の出力との位相差を検出し、両者の
位相が一致したときの移動台11のX、Y、z方向の位
置を記憶する。位相が一致したところで反射面1と焦点
位置とが一致する。ただし、あらかじめ光検出器16の
信号の処理をして、反射面1と焦点位置とが一致する移
動台11の高さを知っておき、その高さに移動台11を
設定し、その後に上記位相差を使う方法を適用する。し
たがって光検出器17−1.17−2を使う方法は、光
検出器16の処理の結果をさらに精密化するのに使用さ
れる。In this embodiment, the interference light 14 is further divided into a light splitting element 15.
and detected by photodetectors 17-1 and 17-2. The light-receiving surfaces of these two detectors are made small,
Receives part of the interference light. Photodetector 17-1.17-2
are arranged so that they are not equidistant from the optical axis in a plane perpendicular to the optical axis. The signal processing device 19 includes a photodetector 17-
The phase difference between the output of No. 1 and the output of No. 17-2 is detected, and the position of the moving table 11 in the X, Y, and Z directions when the two phases match is stored. When the phases match, the reflecting surface 1 and the focal position match. However, the signal from the photodetector 16 is processed in advance to determine the height of the movable table 11 at which the reflecting surface 1 and the focal position match, and the movable table 11 is set at that height, and then the Apply the method using phase difference. The method of using photodetectors 17-1, 17-2 is therefore used to further refine the processing results of photodetector 16.
2度〜3度程度の位相差が検出可能なので、対物レンズ
2として顕微鏡用対物レンズ100倍を使用したときは
10X程度の段差分解能が得られる。本実施例では信号
処理回路18.19の両方を使用しているが、段差が低
いときはどちらか一方だけを使用しても段差の測定が可
能である。また信号処理回路19より光検出器17−1
と17−2との位相差を検出し、それをもとに移動台1
1の高さの移動機構にフィードバックをかけ、位相差を
常に零にすることも可能である。移動台11を横方向に
移動させながら移動台11の高さをプロットすれば、段
差の状態を知ることができる。Since a phase difference of about 2 to 3 degrees can be detected, when a 100x microscope objective lens is used as the objective lens 2, a step resolution of about 10X can be obtained. Although both of the signal processing circuits 18 and 19 are used in this embodiment, when the level difference is low, it is possible to measure the level difference by using only one of them. In addition, the signal processing circuit 19 detects a photodetector 17-1.
and 17-2, and based on that, move the moving platform 1.
It is also possible to apply feedback to the moving mechanism at a height of 1 to always make the phase difference zero. By plotting the height of the movable base 11 while moving the movable base 11 in the lateral direction, it is possible to know the state of the level difference.
いま反射面1が少し傾いた場合を考える。コヒーレント
光9は光軸に対称なガウス分布をし、焦点面の中心と反
射面1とが一致しているものとする。このとき対物レン
ズ2から戻ってくる反射光の強度分布は光軸に対して対
称にならない。しかし波面は依然として光軸に対し垂直
である。したがって反射面1の傾きに関係なく、光検出
器16に入射する2つの干渉光の位相差は受光面上です
べて同じであり、このとき光検出器16の出力の振幅が
最大になる。この振幅の最大値を検出するため強度分布
の変化による影響はない。同様に光検出器17−1およ
び17−2の信号の処理においても、位相差を問題にす
るため、反射光の強度分布が変化しても影響がない。Now consider a case where the reflective surface 1 is slightly tilted. It is assumed that the coherent light 9 has a Gaussian distribution symmetrical to the optical axis, and that the center of the focal plane and the reflective surface 1 coincide. At this time, the intensity distribution of the reflected light returning from the objective lens 2 is not symmetrical with respect to the optical axis. However, the wavefront is still perpendicular to the optical axis. Therefore, regardless of the inclination of the reflecting surface 1, the phase difference between the two interference lights incident on the photodetector 16 is the same on the light receiving surface, and at this time, the amplitude of the output of the photodetector 16 is maximized. Since the maximum value of this amplitude is detected, there is no influence from changes in the intensity distribution. Similarly, in the processing of the signals from the photodetectors 17-1 and 17-2, since the phase difference is taken into account, there is no effect even if the intensity distribution of reflected light changes.
第3図に示す他の実施例はレーザ光源5から出射したコ
ヒーレント光をレンズ7−1.7−2およびピンホール
8を用いてコリメートし、コリメートされたコヒーレン
ト光9を光分割素子(例えば半透明鏡)10で振幅分割
する。分割された第1のコヒーレント光は対物レンズ2
によって微小スポットに絞られ、反射面lをもつ試料上
に照射される。In another embodiment shown in FIG. 3, coherent light emitted from a laser light source 5 is collimated using a lens 7-1, 7-2 and a pinhole 8, and the collimated coherent light 9 is sent to a light splitting element (for example, a half Transparent mirror) Divide the amplitude by 10. The divided first coherent light is passed through the objective lens 2.
The beam is narrowed down to a minute spot and irradiated onto a sample having a reflective surface l.
上記反射面1は3次元に移動可能な移動台11上に設置
され七いる。反射面1で反射された光は光分割素子10
を透過して第1のコヒーレント光になる。The reflecting surface 1 is installed on a movable table 11 that is movable in three dimensions. The light reflected by the reflective surface 1 is transmitted to the light splitting element 10
and becomes the first coherent light.
上記光分割素子10を透過したコヒーレント光9は、た
とえばAO(acoust、ooptic )変調器加
で周波数偏移される。変調周波数をW、としたとき1次
の周波数偏移された光は平面鏡21に向い、反射されて
同じ光路を戻り再びAO変調器加に入る。AO変調器頷
から出射する光の周波数は結局2町の偏移を受けること
になる。周波数偏移を受けた光は光分割素子10で反射
され第2のコヒーレント光として、上記第1のコヒーレ
ント光に重ね合わされる。これらの干渉光14は光分割
素子15で分割され、一部は光検出器16で、他は光検
出器17−1.17−2でそれぞれ検出される。光検出
器16は広い受光面積を有して干渉縞全体を受光し、そ
の出力は受光量に比例する電圧を発生する。対物レンズ
2と反射面1との距離によって、信号電圧は上記第1実
施例と同様に第2図(a)、(b)、(C)に示すよう
な形になる。The coherent light 9 transmitted through the light splitting element 10 is frequency-shifted by, for example, an AO (acoust, ooptic) modulator. When the modulation frequency is W, the first-order frequency-shifted light is directed toward the plane mirror 21, is reflected, returns along the same optical path, and enters the AO modulator again. The frequency of the light emitted from the AO modulator ends up being shifted by two degrees. The frequency-shifted light is reflected by the light splitting element 10 and superimposed on the first coherent light as second coherent light. These interference lights 14 are split by a light splitting element 15, and some are detected by a photodetector 16, and the others are detected by photodetectors 17-1 and 17-2. The photodetector 16 has a wide light-receiving area and receives the entire interference fringe, and its output generates a voltage proportional to the amount of received light. Depending on the distance between the objective lens 2 and the reflective surface 1, the signal voltage takes the form shown in FIGS. 2(a), (b), and (C), similar to the first embodiment.
ただし信号の周波数はすべて同じで2w、である。However, the frequency of all the signals is the same, 2W.
試料の反射面1が焦点位置にあるときに振幅が最大にな
る。その理由は光検出器16の受光面における干渉光の
強度の位相が揃っているからであり、反射面1が焦点位
置から外れたときは干渉縞、を生じて明暗が交互に変化
するため振幅が大きくならない。したがって反射面1を
移動台11によって上下に移動しながら、光検出器16
の出力の振幅が最大になる移動台11の位置を検出する
動作と、移動11 ・
台11を横方向に移動させる動作を交互に行い、移動台
11の横方向の移動距離に対して移動台11の高さをプ
ロットすれば、試料の段差の測定が可能になる。信号処
理装置18は上記光検出器16からの信号の振幅最大値
を検出し、その最大値における移動台11のX%’Y%
Z方向の位置を記憶する機能をもっている。The amplitude is maximum when the reflective surface 1 of the sample is at the focal point. The reason for this is that the phases of the intensities of the interference light on the light receiving surface of the photodetector 16 are aligned, and when the reflecting surface 1 deviates from the focal position, interference fringes are generated and the brightness and darkness alternately change, so the amplitude does not become large. Therefore, while the reflective surface 1 is moved up and down by the moving table 11, the photodetector 16
The operation of detecting the position of the moving table 11 where the amplitude of the output of By plotting the height of 11, it becomes possible to measure the step difference in the sample. The signal processing device 18 detects the maximum amplitude value of the signal from the photodetector 16, and determines the amplitude of the moving platform 11 by X%'Y% at the maximum value.
It has a function to memorize the position in the Z direction.
本実施例では干渉光をさらに光検出器17−1.17−
2で検出する機能を有しており、信号処理装置19はこ
れらの光検出器の出力の位相差を検出し、両者の位相が
一致したときの移動台11の”s ’Is z方向の位
置を記憶する。したがって前記実施例同様、光検出器1
7−1.17−2の信号処理は光検出器16の処理結果
をさらに精密化するのに使用される。In this embodiment, the interference light is further detected by a photodetector 17-1.17-
The signal processing device 19 detects the phase difference between the outputs of these photodetectors, and determines the position of the moving table 11 in the z direction when the phases of the two match. Therefore, as in the previous embodiment, the photodetector 1
The signal processing of 7-1.17-2 is used to further refine the processing results of the photodetector 16.
上記実施例は2度〜3度程度の位相差の検出が可能であ
るから、対物レンズ2として顕微鏡用対物レンズ100
倍を使用したときは10^程度の段差分解能が得られる
。また本実施例では信号処理回路18.19の両方を使
用しているが、段差が低いときはいずれか一方だけを使
用しても段差の測定が可・ 12 ・
能である。In the above embodiment, since it is possible to detect a phase difference of about 2 to 3 degrees, the microscope objective lens 100 is used as the objective lens 2.
When using a multiplier, a step resolution of about 10^ can be obtained. Furthermore, although both of the signal processing circuits 18 and 19 are used in this embodiment, when the level difference is low, it is possible to measure the level difference even if only one of them is used.
コヒーレント光が光軸に対して対称なガウス分布をし、
焦点面の中心と反射面1とが一致しているものとすると
、反射面1が少し傾いた場合、対物レンズ2から戻って
くる反射光の強度分布は光軸に対して対称にならない。Coherent light has a symmetrical Gaussian distribution with respect to the optical axis,
Assuming that the center of the focal plane and the reflective surface 1 coincide, if the reflective surface 1 is slightly tilted, the intensity distribution of the reflected light returning from the objective lens 2 will not be symmetrical with respect to the optical axis.
しかし波面は光軸に対して垂直である。したがって光検
出器16に入射する干渉光の強度の位相はすべて揃うこ
とになる。However, the wavefront is perpendicular to the optical axis. Therefore, the phases of the intensities of the interference lights incident on the photodetector 16 are all aligned.
干渉光の強度の位相が揃ったところでは振幅が最大とな
り、この最大値を検出するため、反射面1の傾きによる
強度分布の変化の影響はない。同様に、光検出器17−
1と17−2においても位相差を問題にしているので、
反射光の強度分布が変化しても影響がない。The amplitude becomes maximum when the phases of the intensities of the interference lights are aligned, and since this maximum value is detected, there is no influence of changes in the intensity distribution due to the inclination of the reflecting surface 1. Similarly, photodetector 17-
1 and 17-2 are also concerned with the phase difference, so
There is no effect even if the intensity distribution of reflected light changes.
上記のように本発明による段差測定装置は、コヒーレン
ト光と、該コヒーレント光を分割する光分割素子と、分
割した第1のコヒーレント光を測定試料面上で微小スポ
ットに収束する収束光学系と、該収束光学系と上記測定
試料表面との相対位置を変化させる移動台と、分割した
第2のコヒーレント光の光路長または周波数を変化させ
る機構と、上記測定試料表面から反射された第1のコヒ
ーレント光を集光し、上記光路長または周波数を変化さ
せた第2のコヒーレント光と干渉させ、干渉l−だとき
に生じる干渉縞を検出する光検出器と、該光検出器の信
号を処理する信号処理回路とを備えたことにより、コヒ
ーレント光を対物レンズで十分絞ると横方向の分解能を
1μm程度にすることができ、ミクロンオーダで平面方
向の構造が変化する半導体装置の表面計測が可能である
。また本発明においては、干渉光の位相が揃うところを
検出しているため、試料面の反射光の強度分布が変化し
て光軸に対し対称にならない場合に発生する誤差をなく
すことができる。さらに試料面が種々の側斜で構成され
部分的に反射率が異る場合でも、本発明では反射光の強
度でなく干渉光の位相を検出するため、測定を行うこと
ができる。As described above, the level difference measuring device according to the present invention includes a coherent light, a light splitting element that splits the coherent light, and a converging optical system that focuses the split first coherent light onto a minute spot on the measurement sample surface. a movable stage that changes the relative position between the converging optical system and the measurement sample surface; a mechanism that changes the optical path length or frequency of the divided second coherent light; and a first coherent beam reflected from the measurement sample surface. A photodetector that collects light, causes it to interfere with a second coherent light whose optical path length or frequency has been changed, and detects interference fringes that occur when the interference occurs; and a photodetector that processes the signal of the photodetector. By being equipped with a signal processing circuit, if the coherent light is narrowed down sufficiently with an objective lens, the lateral resolution can be reduced to about 1 μm, making it possible to measure the surface of semiconductor devices whose planar structure changes on the order of microns. be. Furthermore, in the present invention, since the phase of the interference light is detected to be aligned, it is possible to eliminate errors that occur when the intensity distribution of the reflected light on the sample surface changes and is not symmetrical with respect to the optical axis. Furthermore, even if the sample surface is composed of various side slopes and the reflectance differs locally, the present invention detects the phase of the interference light rather than the intensity of the reflected light, so measurement can be performed.
第1図は本発明による段差測定装置の一実施例検出器出
力の反射面の位置に対する依存性を示す図、第3図は本
発明の他の実施例の構成を示す図、第4図は反射面の位
置と反射光の波面の関係を示す図、第5図は干渉縞を表
わす図である。
1・・測定試料面、2・・・レンズ、10.15−=光
分割素子、11・・・移動台、12・・・平面鏡、13
°°°電歪素子、16.17−1.17−2・・・光検
出器、18.19°°°信号処理回路、加・・・AO変
調器。FIG. 1 is a diagram showing the dependence of the detector output on the position of the reflecting surface of one embodiment of the step measuring device according to the present invention, FIG. 3 is a diagram showing the configuration of another embodiment of the present invention, and FIG. FIG. 5 is a diagram showing the relationship between the position of the reflecting surface and the wavefront of reflected light, and FIG. 5 is a diagram showing interference fringes. 1... Measurement sample surface, 2... Lens, 10.15-=light splitting element, 11... Moving table, 12... Plane mirror, 13
°°° electrostrictive element, 16.17-1.17-2... photodetector, 18.19°°° signal processing circuit, addition... AO modulator.
Claims (1)
素子と、分割した第1のコヒーレント光を測定試料面で
微小スポットに収束する収束光学系と、該収束光学系と
上記測定試料表面との相対位置を変化させる移動台と、
分割した第2のコヒーレント光の光路長または周波数を
変化させる機構と、上記測定試料表面から反射された第
1のコヒーレント光を集光し、上記光路長または周波数
を変化させた第2のコヒーレント光と干渉させ、干渉し
たときに生じる干渉縞を検出する光検出器と、該光検出
器の信号を処理する信号処理回路とを備えた段差測定装
置。Coherent light, a light splitting element that splits the coherent light, a converging optical system that converges the divided first coherent light onto a minute spot on the surface of the measurement sample, and a relative position between the convergence optical system and the surface of the measurement sample. a moving table that changes the
a mechanism for changing the optical path length or frequency of the divided second coherent light; and a second coherent beam that collects the first coherent light reflected from the surface of the measurement sample and changes the optical path length or frequency. A level difference measuring device comprising: a photodetector that detects interference fringes generated when the interference occurs; and a signal processing circuit that processes a signal from the photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22125384A JPS6199805A (en) | 1984-10-23 | 1984-10-23 | Step measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22125384A JPS6199805A (en) | 1984-10-23 | 1984-10-23 | Step measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6199805A true JPS6199805A (en) | 1986-05-17 |
Family
ID=16763869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22125384A Pending JPS6199805A (en) | 1984-10-23 | 1984-10-23 | Step measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6199805A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05248817A (en) * | 1991-12-20 | 1993-09-28 | Internatl Business Mach Corp <Ibm> | Interferometer, semiconductor processor and method and apparatus for measuring surface position of substrate |
| CN106225679A (en) * | 2016-07-06 | 2016-12-14 | 南京理工大学 | A kind of method demarcating PZT displacement based on white light interference |
-
1984
- 1984-10-23 JP JP22125384A patent/JPS6199805A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05248817A (en) * | 1991-12-20 | 1993-09-28 | Internatl Business Mach Corp <Ibm> | Interferometer, semiconductor processor and method and apparatus for measuring surface position of substrate |
| CN106225679A (en) * | 2016-07-06 | 2016-12-14 | 南京理工大学 | A kind of method demarcating PZT displacement based on white light interference |
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