JPS6213801B2 - - Google Patents
Info
- Publication number
- JPS6213801B2 JPS6213801B2 JP53127336A JP12733678A JPS6213801B2 JP S6213801 B2 JPS6213801 B2 JP S6213801B2 JP 53127336 A JP53127336 A JP 53127336A JP 12733678 A JP12733678 A JP 12733678A JP S6213801 B2 JPS6213801 B2 JP S6213801B2
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- magnetic
- amount
- garnet film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 16
- 239000002223 garnet Substances 0.000 claims description 9
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005350 ferromagnetic resonance Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
- Compounds Of Iron (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
〔発明の利用分野〕
本発明は、磁気バブルメモリ素子に用いて好ま
しい結果が得られる磁気バブル素子用ガーネツト
膜に関する。
〔発明の背景〕
従来、磁性ガーネツト膜としては（YSm）3
（FeGa）5O12などのようにY3Fe5-xGaxO12を基本
組成とした材料が用いられていた。この場合、ジ
ヤーナルオブアプライドフイジツクス（Journal
of Applied Physics）、45（1974）第3638頁、ピ
ー・ハンソン（Ｐ・Hanson）他著に記述のよう
に、一次結晶異方性エネルギーK1は室温付近
で、せいぜい6000erg／c.c.以下であり、大きなK1
を誘起し、バブルを一定方向に安定走行させるこ
とが不可能であつた（このK1の大きさによつ
て、バブルの安定位置と安定方向が定まる。）。
〔発明の目的〕
本発明の目的は磁性ガーネツト膜の一次結晶異
方性エネルギーK1をコントロールすることによ
り磁気バブルを一定方向に安定走行させると共
に、磁気バブル速度の上限を大きくすることにあ
る。
〔発明の概要〕
本発明は、従来公知のバブル保持用ガーネツト
膜に所定量のCoを添加して、K1を所望の値とす
るものである。ガーネツト膜中にCoが入ると、
極く微量でも、K1の大きさを著るしく変えるこ
とができるので、バブルの安定走行方向およびそ
の速度の上限を変化させることができる。
第１図および第２図は、一般式
A3〔（FeB）5-xCox〕O12
（ただし、ＡはＹ、La、Sm、Eu、Gd、Er、
Tm、Lu、Yb、Caなる群から選ばれた少なくと
も１種の元素、ＢはGa、Al、Ge、Si、Scなる群
から選ばれた少なくとも１種の元素）で表わされ
る組成を持つたガーネツト膜において、それぞれ
Coの組成量（モル／分子式量）と最大バブル移
動速度および保磁力との関係を示す曲線図の一例
である。
第１図から明らかなように、Coを添加すると
最大バブル速度は著るしく大になり、たとえばこ
の図の場合においては、0.02モル／分子式量添加
すると、Coを含まないときの約２倍になる。し
かし、第２図に示すように、Coの量が大になる
と保磁力も同時に大きくなつてしまい、たとえば
この図の場合においては、Coの量が0.2モル／分
子式量に達すると保磁力がほぼ2.0エルステツド
に達してしまうので、Coの量は0.2モル／分子式
量以下であることが実用上必要である。
一方、Coを全く含まないと、バブルの安定方
向が不定となり、速度を大きくできないので、
Coは微量でも必ず含まれなくてはならない。し
たがつて、この例の場合においては、Co添加量
ｘは０＜ｘ≦0.2とすることが実用上必要であ
る。
〔発明の実施例〕
実施例 １
Gd3Ga5O12（111）基板を100rpmで回転しつつ
925℃の第１表に示す組成の融液に浸漬し９分間
のエピタキシヤル成長を行つたところ下記の特性
をもつ（Ｙ2.48Sm0.52）（Fe3.85Ga1.10Co0.05）O12
膜を得た。膜厚は4.6μｍ、ストライプ磁区巾
（バブル径と同等）5.9μｍ、特性長0.74μｍ、バ
ブル消滅磁界910e、キユリー温度129℃。またこ
の膜の磁気異方性を強磁性共鳴法、トルク法によ
り測定したところ、一軸異方性エネルギーKu＝
＋12900erg／c.c.、立方対称１次磁気異方性エネル
ギーK1＝−11700erg／c.c.、立方対称２次磁気異
方性エネルギーK2＝−15600erg／c.c.が得られ
た。
この膜を用いてバブルの動特性実験を行つたが
基板面内の特定の３方向（互に120゜の角度をな
す）でバブル速度が大きくバブルが立方対称性の
基板面内異方性エネルギーの影響をうけているこ
とが分つた。この３方向にそつてバブルの転送回
路を設けたところ、Coを含まない膜の転送速度
（5m／秒程度）よりはるかに大きい転送速度
（30m／２秒）とすることができた。
[Field of Application of the Invention] The present invention relates to a garnet film for magnetic bubble devices that can be used in magnetic bubble memory devices and obtain favorable results. [Background of the invention] Conventionally, as a magnetic garnet film, (YSm) 3
Materials with a basic composition of Y 3 Fe 5-x Ga x O 12 , such as (FeGa) 5 O 12 , were used. In this case, the Journal of Applied Physics
of Applied Physics), 45 (1974), p. 3638, by P. Hanson et al., the primary crystal anisotropy energy K 1 is at most 6000 erg/cc or less near room temperature; big k 1
(The size of this K 1 determines the stable position and stable direction of the bubble.) [Object of the Invention] The object of the present invention is to make magnetic bubbles move stably in a certain direction and to increase the upper limit of the magnetic bubble velocity by controlling the primary crystal anisotropy energy K1 of a magnetic garnet film. [Summary of the Invention] According to the present invention, a predetermined amount of Co is added to a conventionally known bubble retaining garnet film to adjust K 1 to a desired value. When Co enters the garnet film,
Since even a very small amount can significantly change the magnitude of K 1 , it is possible to change the stable traveling direction of the bubble and the upper limit of its speed. Figures 1 and 2 show the general formula A 3 [(FeB) 5-x Co x ]O 12 (where A is Y, La, Sm, Eu, Gd, Er,
Garnet having a composition represented by at least one element selected from the group consisting of Tm, Lu, Yb, and Ca, and B being at least one element selected from the group consisting of Ga, Al, Ge, Si, and Sc. In the membrane, respectively
It is an example of a curve diagram showing the relationship between the composition amount (mole/molecular formula weight) of Co, the maximum bubble movement speed, and the coercive force. As is clear from Figure 1, the maximum bubble velocity increases significantly when Co is added; for example, in the case of this figure, when 0.02 mol/molecular weight is added, the maximum bubble velocity increases to about twice that when Co is not included. Become. However, as shown in Figure 2, as the amount of Co increases, the coercive force also increases.For example, in the case of this figure, when the amount of Co reaches 0.2 mol/molecular formula weight, the coercive force almost decreases. Therefore, it is practically necessary that the amount of Co is 0.2 mol/molecular formula weight or less. On the other hand, if Co is not included at all, the stable direction of the bubble will be unstable and the velocity cannot be increased.
Co must always be included, even if it is in a trace amount. Therefore, in this example, it is practically necessary that the amount x of Co added satisfies 0<x≦0.2. [Embodiments of the invention] Example 1 While rotating a Gd 3 Ga 5 O 12 (111) substrate at 100 rpm
When immersed in a melt having the composition shown in Table 1 at 925°C and epitaxially grown for 9 minutes, it had the following properties (Y 2 . 48 Sm 0 . 52 ) (Fe 3 . 85 Ga 1 . 10 Co 0.05 ) O12
A membrane was obtained. Film thickness is 4.6μm, stripe magnetic domain width (equivalent to bubble diameter) 5.9μm, characteristic length 0.74μm, bubble extinction magnetic field 910e, Curie temperature 129℃. In addition, when the magnetic anisotropy of this film was measured using the ferromagnetic resonance method and the torque method, the uniaxial anisotropy energy Ku =
+12900 erg/cc, cubic symmetrical primary magnetic anisotropy energy K 1 =-11700 erg/cc, and cubic symmetrical secondary magnetic anisotropy energy K 2 =-15600 erg/cc were obtained. Bubble dynamic characteristics experiments using this film showed that the bubble velocity was large in three specific directions within the substrate plane (at an angle of 120° to each other), and the bubbles had cubic symmetry and in-plane anisotropic energy. It was found that it was influenced by By installing bubble transfer circuits along these three directions, we were able to achieve a transfer speed (30 m/2 seconds) that was much higher than the transfer speed of a film that did not contain Co (about 5 m/s).
本発明によれば、磁性ガーネツト膜の一次結晶
異方性エネルギーK1をコントロールすることに
より、磁気バブルを一定方向に安定走行させるこ
とができると共に、磁気バブル速度の上限を大き
くすることができる。
According to the present invention, by controlling the primary crystal anisotropy energy K1 of the magnetic garnet film, it is possible to make the magnetic bubble run stably in a certain direction, and it is also possible to increase the upper limit of the magnetic bubble velocity.
第１図および第２図は、それぞれ、Co添加量
と最大バブル移動速度および保磁力との関係を示
す曲線図である。
FIG. 1 and FIG. 2 are curve diagrams showing the relationship between the amount of Co added, the maximum bubble movement speed, and the coercive force, respectively.
Claims (1)
Coを含むことを特徴とする、磁気バブル素子用
ガーネツト膜。 ２ 一般式 A3〔（FeB）5-xCox〕O12 （ただし、ＡはＹ、La、Sm、Eu、Gd、Er、
Tm、Lu、Yb，Caなる群から選ばれた少なくと
も一種の元素、ＢはGa、Al、Ge、Si、Scなる群
から選ばれた少なくとも一種の元素）で表わされ
る組成を有する、特許請求の範囲第１項記載の磁
気バブル素子用ガーネツト膜。[Claims] 1. In a garnet film for a magnetic bubble element,
A garnet film for magnetic bubble elements, characterized by containing Co. 2 General formula A 3 [(FeB) 5-x Co x ]O 12 (A is Y, La, Sm, Eu, Gd, Er,
A patent claim having a composition represented by at least one element selected from the group consisting of Tm, Lu, Yb, and Ca, and B being at least one element selected from the group consisting of Ga, Al, Ge, Si, and Sc. A garnet film for a magnetic bubble element according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12733678A JPS5555503A (en) | 1978-10-18 | 1978-10-18 | Garnet film for magnetic bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12733678A JPS5555503A (en) | 1978-10-18 | 1978-10-18 | Garnet film for magnetic bubble element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5555503A JPS5555503A (en) | 1980-04-23 |
| JPS6213801B2 true JPS6213801B2 (en) | 1987-03-28 |
Family
ID=14957393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12733678A Granted JPS5555503A (en) | 1978-10-18 | 1978-10-18 | Garnet film for magnetic bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5555503A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642311A (en) * | 1979-09-17 | 1981-04-20 | Hitachi Ltd | Garnet film for magnetic bubble |
| JPS5834904A (en) * | 1981-08-26 | 1983-03-01 | Comput Basic Mach Technol Res Assoc | Garnet film for contiguous disk magnetic bubble element |
| JPH0622171B2 (en) * | 1983-12-12 | 1994-03-23 | 株式会社リコー | Magneto-optical recording medium |
-
1978
- 1978-10-18 JP JP12733678A patent/JPS5555503A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| PHYSICAL REVIEW B=1977 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5555503A (en) | 1980-04-23 |
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