JPS6214765B2 - - Google Patents
Info
- Publication number
- JPS6214765B2 JPS6214765B2 JP56013331A JP1333181A JPS6214765B2 JP S6214765 B2 JPS6214765 B2 JP S6214765B2 JP 56013331 A JP56013331 A JP 56013331A JP 1333181 A JP1333181 A JP 1333181A JP S6214765 B2 JPS6214765 B2 JP S6214765B2
- Authority
- JP
- Japan
- Prior art keywords
- schottky
- metal side
- photodetecting element
- side electrode
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【発明の詳細な説明】
この発明は検出感度を高くしたシヨツトキー型
光検出素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Schottky type photodetecting element with high detection sensitivity.
第１図は従来のシヨツトキー型光検出素子を示
す断面図である。同図において、１は例えば比抵
抗10〜50ΩcmのＰ形のシリコン基板、２はこのシ
リコン基板１上に金（Au）またはパラジウム、
白金などのシリサイドすなわち白金硅化物、パラ
ジウム硅化物、イリジウム硅化物などの金属また
は金属硅化物を蒸着して形成したシヨツトキー接
合の金属側電極、３はアルミ配線層であるシヨツ
トキー接合の金属側リード、４はＮ形領域のガー
ドリング、５は素子間分離用の酸化硅素膜、６は
素子保護用の窒化硅素膜である。 FIG. 1 is a sectional view showing a conventional Schottky type photodetecting element. In the figure, 1 is a P-type silicon substrate with a specific resistance of 10 to 50 Ωcm, and 2 is gold (Au) or palladium on this silicon substrate 1.
a metal side electrode of a Schottky junction formed by vapor-depositing a silicide such as platinum, that is, a metal or metal silicide such as platinum silicide, palladium silicide, iridium silicide; 3 is a metal side lead of the Schottky junction, which is an aluminum wiring layer; 4 is a guard ring for the N-type region, 5 is a silicon oxide film for isolation between elements, and 6 is a silicon nitride film for element protection.
次に、上記構成に係るシヨツトキー型光検出素
子の動作について説明する。まず、このシヨツト
キー型光検出素子を例えば液体窒素温度（77K）
で動作させてシヨツトキー接合を逆バイアスに保
持する。そして、例えば波長４μｍの赤外線をシ
リコン基板１の下方から照射すると、この赤外線
はこのシリコン基板１を下方から透過してシヨツ
トキー接合に到達する。この赤外線のエネルギー
は金属側電極２で吸収される。この場合、シヨツ
トキー障壁の高さから検出可能な最大波長が決定
する。すなわち、この金属側電極２が白金硅化物
の場合にはhv＞0.275eV（＝白金硅化物のシヨツ
トキー障壁の高さ）なる周波数に対する波長λ
（白金硅化物ではλ＜4.47μｍ、金では4.92μ
ｍ）から得られた運動エネルギーを持つ正孔がシ
リコン基板１に注入される。これにより、金属側
電極２には電子が蓄積され、この電荷を検出する
ことにより、赤外線の入射量に対応した信号が得
られる。 Next, the operation of the Schottky type photodetecting element according to the above configuration will be explained. First, this Schottky type photodetector is heated to a temperature of, for example, liquid nitrogen (77K).
to maintain the Schottky junction in reverse bias. For example, when infrared rays with a wavelength of 4 μm are irradiated from below the silicon substrate 1, the infrared rays pass through the silicon substrate 1 from below and reach the Schottky junction. This infrared energy is absorbed by the metal side electrode 2. In this case, the maximum detectable wavelength is determined from the height of the Schottky barrier. In other words, if the metal side electrode 2 is made of platinum silicide, the wavelength λ for the frequency hv>0.275eV (=height of the Schottky barrier of platinum silicide)
(λ<4.47μm for platinum silicide, 4.92μm for gold
Holes with kinetic energy obtained from step m) are injected into the silicon substrate 1. As a result, electrons are accumulated in the metal side electrode 2, and by detecting this charge, a signal corresponding to the amount of incident infrared rays can be obtained.
しかしながら、従来のシヨツトキー型光検出素
子ではその比検出感度Ｄが通常109cmHz１／2W-1
程度で、シリコン不純物ドープ型、化合物半導体
型などに比べて１〜２桁低いなど、検出感度が低
い欠点があつた。 However, in conventional Schottky type photodetecting elements, the relative detection sensitivity D is usually 10 9 cmHz 1/2W -1
The drawback was that the detection sensitivity was low, such as one to two orders of magnitude lower than that of silicon impurity-doped types, compound semiconductor types, etc.
したがつて、この発明の目的は検出感度の高い
シヨツトキー型光検出素子を提供するものであ
る。 Therefore, an object of the present invention is to provide a Schottky type photodetecting element with high detection sensitivity.
このような目的を達成するため、この発明はシ
ヨツトキー接合の金属側電極とシヨツトキー接合
の周辺部のみで接続するように構成した金属側リ
ードを備えるものであり、以下実施例を用いて詳
細に説明する。 In order to achieve such an object, the present invention is provided with a metal side lead configured to connect only the metal side electrode of the shot key junction and the peripheral part of the shot key junction, and will be described in detail below using examples. do.
第２図は、この発明に係るシヨツトキー型光検
出素子の一実施例を示す断面図である。同図にお
いて、７はシヨツトキー接合の金属側電極２とシ
ヨツトキー接合の周辺部のみで接続するように構
成したアルミ層からなる金属側リード、８は金属
側電極２上に設けた窒化硅素膜からなる絶縁層で
ある。 FIG. 2 is a sectional view showing an embodiment of the Schottky type photodetecting element according to the present invention. In the figure, 7 is a metal side lead made of an aluminum layer configured to connect to the metal side electrode 2 of the Schottky junction only at the periphery of the Schottky junction, and 8 is a silicon nitride film provided on the metal side electrode 2. It is an insulating layer.
次に、上記構成に係るシヨツトキー型光検出素
子の動作について説明する。まず、前記したよう
に、シヨツトキー型光検出素子を液体窒素（例え
ば77K）で動作すると共にシヨツトキー接合を逆
バイアスに保持する。そして、赤外線をシリコン
基板１の下方から照射すると、この赤外線はこの
シリコン基板１の下部から透過してシヨツトキー
接合に到達する。そして、金属側電極２中に形成
された正孔が拡散して接合に到達したものがバリ
ヤーを越えてシリコン基板１に注入されるが、金
属側リード７がシヨツトキー接合の金属側電極２
とシヨツトキー接合の周辺部のみで接続している
ため、その拡散長が短かくなり、再結合による損
失が少なくなり、光電流が効率よく流れ、検出感
度が高くなる。また、金属側電極２が厚いと、こ
の金属側電極２内での再結合のため、金属側リー
ド７の有無による差がなくなる。そこで金属側電
極２を薄くすると再び光電流が効率よく流れ、検
出感度を更に高くすることができる。 Next, the operation of the Schottky type photodetecting element according to the above configuration will be explained. First, as described above, the Schottky type photodetecting element is operated with liquid nitrogen (for example, 77 K) and the Schottky junction is maintained at a reverse bias. When infrared rays are irradiated from below the silicon substrate 1, the infrared rays are transmitted from the bottom of the silicon substrate 1 and reach the Schottky junction. Then, the holes formed in the metal side electrode 2 diffuse and reach the junction and are injected into the silicon substrate 1 over the barrier.
Since it is connected only at the periphery of the Schottky junction, its diffusion length is shortened, loss due to recombination is reduced, photocurrent flows efficiently, and detection sensitivity is increased. Moreover, if the metal side electrode 2 is thick, there will be no difference depending on the presence or absence of the metal side lead 7 due to recombination within the metal side electrode 2. Therefore, if the metal side electrode 2 is made thinner, the photocurrent flows efficiently again, and the detection sensitivity can be further increased.
なお、第３図は第１図に示す従来のシヨツトキ
ー型光検出素子（黒丸で示す）と第２図に示すこ
の発明のシヨツトキー型光検出素子（白丸で示
す）における白金膜厚と光電流との関係を示す図
である。この図からわかるように、白金膜厚が
500Å程度では従来の光検出素子もこの発明の光
検出素子も光電流の量はほぼ同じであるが、50Å
ではこの発明の光検出素子の方が約６倍光電流が
増加する。また、前記実施例ではガードリング４
を使用したが、使用しなくてもよいことはもちろ
んである。また、素子間分離に酸化硅素膜を利用
したが、これに限定せず、Ｐ形領域を用いてもよ
いことはもちろんである。 In addition, FIG. 3 shows the platinum film thickness and photocurrent in the conventional Schottky type photodetecting element shown in FIG. 1 (indicated by black circles) and the Schottky type photodetecting element of the present invention (indicated by white circles) shown in FIG. FIG. As you can see from this figure, the platinum film thickness is
At about 500 Å, the amount of photocurrent is almost the same for both the conventional photodetecting element and the photodetecting element of the present invention, but at 50 Å
In this case, the photodetector of the present invention increases the photocurrent by about 6 times. Further, in the above embodiment, the guard ring 4
Although I used it, it is of course not necessary to use it. Further, although a silicon oxide film is used for isolation between elements, the present invention is not limited to this, and it goes without saying that a P-type region may be used.
以上詳細に説明したように、この発明に係るシ
ヨツトキー型光検出素子によれば検出感度が大幅
に向上する効果がある。 As described above in detail, the Schottky type photodetecting element according to the present invention has the effect of significantly improving detection sensitivity.
第１図は従来のシヨツトキー型光検出素子を示
す断面図、第２図はこの発明に係るシヨツトキー
型光検出素子の一実施例を示す断面図、第３図は
第１図に示す従来のシヨツトキー型光検出素子と
第２図に示すこの発明のシヨツトキー型光検出素
子における白金膜厚と光電流との関係を示す図で
ある。
１……シリコン基板、２……金属側電極、３…
…金属側リード、４……ガードリング、５……酸
化硅素膜、６……窒化硅素膜、７……金属側リー
ド、８……絶縁層。なお、同一符号は同一または
相当部分を示す。
FIG. 1 is a sectional view showing a conventional shot key type photodetecting element, FIG. 2 is a sectional view showing an embodiment of the shot key type photodetecting element according to the present invention, and FIG. 3 is a sectional view of the conventional shot key type photodetecting element shown in FIG. 3 is a diagram showing the relationship between platinum film thickness and photocurrent in a Schottky type photodetecting element and the Schottky type photodetecting element of the present invention shown in FIG. 2. FIG. 1...Silicon substrate, 2...Metal side electrode, 3...
...Metal side lead, 4... Guard ring, 5... Silicon oxide film, 6... Silicon nitride film, 7... Metal side lead, 8... Insulating layer. Note that the same reference numerals indicate the same or equivalent parts.
Claims (1)
シヨツトキー接合を用いる光検出素子において、
このシヨツトキー接合の金属側電極とシヨツトキ
ー接合の周辺部のみで接続するように構成した金
属側リードを備えたことを特徴とするシヨツトキ
ー型光検出素子。 ２ 前記金属側電極として、金、パラジウム、白
金硅化物、パラジウム硅化物、イリジウム硅化物
を用いることを特徴とする特許請求の範囲第１項
記載のシヨツトキー型光検出素子。 ３ 前記金属側電極の厚さを300Å以下とするこ
とを特徴とする特許請求の範囲第１項または第２
項記載のシヨツトキー型光検出素子。[Claims] 1. A photodetecting element using a Schottky junction by joining a metal or a metal silicide to silicon,
A Schottky type photodetecting element characterized by comprising a metal side lead configured to connect the metal side electrode of the Schottky junction only at the periphery of the Schottky junction. 2. The Schottky type photodetecting element according to claim 1, wherein gold, palladium, platinum silicide, palladium silicide, or iridium silicide is used as the metal side electrode. 3. Claim 1 or 2, characterized in that the metal side electrode has a thickness of 300 Å or less.
Schottky type photodetector element described in .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013331A JPS57125824A (en) | 1981-01-29 | 1981-01-29 | Schottky photodetector |
| DE19813145840 DE3145840A1 (en) | 1980-11-25 | 1981-11-19 | Optical Schottky-type detector device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013331A JPS57125824A (en) | 1981-01-29 | 1981-01-29 | Schottky photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57125824A JPS57125824A (en) | 1982-08-05 |
| JPS6214765B2 true JPS6214765B2 (en) | 1987-04-03 |
Family
ID=11830151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56013331A Granted JPS57125824A (en) | 1980-11-25 | 1981-01-29 | Schottky photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57125824A (en) |
-
1981
- 1981-01-29 JP JP56013331A patent/JPS57125824A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57125824A (en) | 1982-08-05 |
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