JPS6214825B2 - - Google Patents
Info
- Publication number
- JPS6214825B2 JPS6214825B2 JP17934780A JP17934780A JPS6214825B2 JP S6214825 B2 JPS6214825 B2 JP S6214825B2 JP 17934780 A JP17934780 A JP 17934780A JP 17934780 A JP17934780 A JP 17934780A JP S6214825 B2 JPS6214825 B2 JP S6214825B2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- exposure
- closing operation
- amount
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 102100028908 Cullin-3 Human genes 0.000 description 1
- 101000916238 Homo sapiens Cullin-3 Proteins 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
本発明は、ウエハ又はフオトマスク上にパター
ンを露光する装置に関し、特に、その制御装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for exposing a pattern on a wafer or a photomask, and particularly to a control apparatus thereof.
近年、半導体素子、特にIC製造においては、
回路パターンの微細化が要求され、ウエハ上に1
μm以下の線幅を有するパターンを焼き付ける装
置、いわゆる露光装置も高精度な露光制御が望ま
れてきた。 In recent years, in semiconductor element, especially IC manufacturing,
There is a demand for finer circuit patterns, and one
Highly accurate exposure control has also been desired for devices that print patterns having line widths of μm or less, so-called exposure devices.
一般に、ウエハ又はフオトマスクに回路パター
ンの像を露光する露光装置は、ウエハ上に塗布さ
れた感光材料(フオトレジスト)に常に一定の露
光量を与えることが望ましい。このような露光装
置の概略を第1図に示す。 Generally, it is desirable that an exposure device that exposes a circuit pattern image onto a wafer or a photomask always applies a constant amount of exposure to a photosensitive material (photoresist) coated on the wafer. An outline of such an exposure apparatus is shown in FIG.
第1図において、露光用の光源、例えば水銀ラ
ンプ1の光が集光レンズ2によつて集光された
後、シヤツターとなる回転板3を介して、コンデ
ンサーレンズ5、投影レンズ8をへて、ウエハ9
(フオトマスクでもよい。)に至るような、投影式
の露光装置を示す。(その他の方式の露光装置で
も同様である。)回転板3は、例えば4分割し
て、遮光部と透過部を交互に設け、回転駆動機
構、例えばパルスモーター4によつて回転され、
ロータリーシヤツターとして働く。回路パターン
を有するガラス基板7(レテイクルやフオトマス
ク)は、コンデンサーレンズ5と投影レンズ8の
間に配置され、ガラス基板7のパターンがウエハ
9の上に結像する。又、光検出器6は、光源の光
強度を測定するような光電変換素子であり、シヤ
ツターを経た光を測光し、その出力は露光制御の
ために使われる。このような装置では、機構上シ
ヤツターの開閉動作時間が長く、数m sec.〜数
10m sec.に及ぶ。また、露光動作に伴う光強度
(検出器6で検出した値、又はウエハ9上で測定
した値)の変化を第2図に示す。第2図で、横軸
に露光時間、縦軸に光強度を取り、台形状の折線
AとBは、光源のランプの劣化によるちがいを表
わす。ランプが新しく、光強度が大きいと、折線
Aのように、またランプが劣化して光強度が小さ
いと折線Bのようになる。尚、台形の上底部すな
わちシヤツターの全開時の光強度をLN、LOとす
る。このように、台形状の光強度特性を有するの
は、シヤツターの開閉動作時間に基づいている。
これは、第1図で示したような回転板3が1/4回
転する時間によつて生じるものである。回転板3
の遮光部が光をさえぎつている状態から、回転板
3が1/4回転して、光を完全に透過する状態まで
にかかる時間(シヤツター開放時間)は、第2図
では時間ta―toである。尚、回転板3の回転開始
時をtoとしてある。そして、時間ta―toが経過
後、回転板3を光が完全に透過する(このこと
を、以後シヤツター全開と呼ぶ。)ので、光強度
LN、又はLOとして安定する。そして、所定の露
光時間後、すなわち時刻tb又は時刻tdから回転板
3がさらに1/4回転して、遮光部によつて光がさ
えぎられる。光が完全に遮光される時刻は、時刻
tc、又はteである。尚、シヤツターの構造上、開
放動作時間と、閉成動作時間はほぼ等しいので、
時間tc―tbと時間te―tdは共に等しく、かつ時間
ta―toともほぼ等しくなる。 In FIG. 1, light from a light source for exposure, such as a mercury lamp 1, is focused by a condenser lens 2, and then passes through a condenser lens 5 and a projection lens 8 via a rotary plate 3, which serves as a shutter. , wafer 9
(A photomask may also be used.) (The same applies to exposure apparatuses of other types.) The rotary plate 3 is divided into four parts, for example, and has light-shielding parts and transparent parts alternately provided, and is rotated by a rotational drive mechanism, for example, a pulse motor 4.
Works as a rotary shutter. A glass substrate 7 (reticle or photomask) having a circuit pattern is placed between the condenser lens 5 and the projection lens 8 , and the pattern of the glass substrate 7 is imaged onto the wafer 9 . The photodetector 6 is a photoelectric conversion element that measures the light intensity of a light source, measures the light that has passed through the shutter, and its output is used for exposure control. In such devices, the opening and closing time of the shutter is mechanically long, ranging from several m sec. to several m sec.
It extends to 10m sec. Further, FIG. 2 shows changes in light intensity (value detected by the detector 6 or value measured on the wafer 9) accompanying the exposure operation. In FIG. 2, the horizontal axis represents exposure time and the vertical axis represents light intensity, and trapezoidal broken lines A and B represent differences due to deterioration of the light source lamp. If the lamp is new and the light intensity is high, the line will look like broken line A, and if the lamp has deteriorated and the light intensity is low, the line will look like broken line B. Note that the light intensities at the top of the trapezoid, that is, when the shutter is fully open, are L N and L O . Thus, the trapezoidal light intensity characteristic is based on the opening/closing operation time of the shutter.
This occurs due to the time it takes for the rotary plate 3 to rotate 1/4 as shown in FIG. Rotating plate 3
The time it takes for the rotary plate 3 to rotate 1/4 of a turn and completely transmit light from the state where the light shielding part blocks the light (shutter opening time) is expressed as the time ta-to in Figure 2. be. Note that the time when the rotary plate 3 starts rotating is defined as to. Then, after the time ta-to has elapsed, the light completely passes through the rotary plate 3 (hereinafter referred to as fully opening the shutter), so that the light intensity becomes stable at L N or L O . Then, after a predetermined exposure time, that is, from time tb or time td, the rotary plate 3 further rotates by 1/4, and the light is blocked by the light blocking section. The time when the light is completely blocked is the time
tc or te. Furthermore, due to the structure of the shutter, the opening operation time and the closing operation time are almost equal, so
Time tc-tb and time te-td are both equal and time
It is also almost equal to ta-to.
この光強度特性に示したように、普通このよう
な装置では、露光量を一定にするため、ランプの
明るさに応じて露光時間を変えている。そこで、
従来の露光制御について、第3図により説明す
る。第3図において、光電検出器6の光電出力は
増幅器11によつて増幅された後、抵抗12、コ
ンデンサー14、増幅器13による積分器に入力
する。積分器の出力が、露光量に比例した値、い
わゆる光量積分値である。この積分器の出力は、
比較器15によつて、あらかじめ定めた目標値
(基準電圧)ESと比較される。 As shown in this light intensity characteristic, in such a device, the exposure time is usually changed depending on the brightness of the lamp in order to keep the exposure amount constant. Therefore,
Conventional exposure control will be explained with reference to FIG. In FIG. 3, the photoelectric output of the photoelectric detector 6 is amplified by an amplifier 11 and then input to an integrator comprising a resistor 12, a capacitor 14, and an amplifier 13. The output of the integrator is a value proportional to the exposure amount, a so-called light amount integral value. The output of this integrator is
The comparator 15 compares it with a predetermined target value (reference voltage) E S .
一方、フリツプフロツプ回路16は、露光動作
の開始時点でセツトされ、シヤツター駆動回路1
7によつて、モーター等を駆動してシヤツターを
開く。シヤツターが開いた後、上述の如く光量積
分値が基準電圧ESに達すると、比較器15の出
力が反転してフリツプフロツプ回路16がリセツ
トされる。このリセツトにより、駆動回路17
は、モーター等をさらに回転して、シヤツターを
閉じる。こうして、ランプの明るさが変つても光
量積分値が、一定値になるように、シヤツターは
制御される。ここで、その時の露光量を第4図の
グラフに示す。第4図のグラフで横軸に第2図と
同一の時間軸を取り、縦軸に露光量、すなわち光
量積分値を取る。露光開始時toから時刻taまで
は、第2図のように、シヤツターの開放動作時間
であり、露光量はなだらかに上昇していく。時刻
taから時刻tb、又は時刻tdまでは、シヤツター全
開期間である。尚、露光量AとBは第2図で示し
たように、光源の光強度が大きいときと、小さい
ときを示す。そして露光量A、又はBが目標値E
Sに達すると、シヤツター閉じ動作が始まる。し
かしながら、シヤツターが完全に閉じるまでの時
間tc―tb、又はte―tdにも、露光されることにな
り、その結果総露光量はEO、又はEO′となり、
所定の目標値ESよりも超過(EO―ES、又はE
O′―ES)することになる。 On the other hand, the flip-flop circuit 16 is set at the start of the exposure operation, and the flip-flop circuit 16 is set at the start of the exposure operation.
7, the motor etc. are driven to open the shutter. After the shutter is opened, when the integrated value of the amount of light reaches the reference voltage E S as described above, the output of the comparator 15 is inverted and the flip-flop circuit 16 is reset. By this reset, the drive circuit 17
then rotate the motor etc. further and close the shutter. In this way, the shutter is controlled so that the integrated value of the amount of light remains constant even if the brightness of the lamp changes. Here, the exposure amount at that time is shown in the graph of FIG. In the graph of FIG. 4, the horizontal axis is the same time axis as in FIG. 2, and the vertical axis is the exposure amount, that is, the integrated light amount value. As shown in FIG. 2, the period from exposure start time to to time ta is the shutter opening operation time, and the exposure amount gradually increases. time
The period from ta to time tb or time td is the shutter fully open period. As shown in FIG. 2, the exposure amounts A and B indicate when the light intensity of the light source is high and when it is low. Then, the exposure amount A or B is the target value E
When S is reached, the shutter begins to close. However, the exposure will also occur during the time tc-tb or te-td until the shutter is completely closed, and as a result, the total exposure amount will be E O or E O ',
Exceeds the predetermined target value E S (E O -E S or E
O ′−E S ).
光源の光強度が常に一定であれば超過分を予測
して、総露光量を決定できるが、実際には、ラン
プの劣化に伴い光源の明るさは大きく変化する。
従つて、第4図に示したように、時間tc―tbと時
間te―tdは同じでも、超過分は変化してしまう。
この超過分の変化(EO―EO′)は、光源の光強
度が小さく、露光時間が十分に長い場合には無視
できる。しかし、光源の光強度が大きくなり、全
露光量中に占める、シヤツターの閉じ動作時間中
の露光量の割合が大きくなつた場合、超過分の変
化(EO―EO′)による総露光量の変動は重要な
問題となる。一般に、露光量の制御として、総露
光量の変動は数%以下が必要とされるが、上述の
場合、従来のような装置では、超過分に対する配
慮がなされていないので、長期間に渡つて、安定
した露光量を得ることができない欠点を有してい
た。 If the light intensity of the light source is always constant, the excess amount can be predicted and the total exposure amount can be determined, but in reality, the brightness of the light source changes significantly as the lamp deteriorates.
Therefore, as shown in FIG. 4, even though the time tc-tb and the time te-td are the same, the excess amount changes.
This excess change (E o -E o ') can be ignored if the light intensity of the light source is small and the exposure time is sufficiently long. However, if the light intensity of the light source increases and the exposure amount during the shutter closing time becomes a larger proportion of the total exposure amount, the total exposure amount due to the excess change (E O -E O ') The fluctuation of is an important issue. Generally, when controlling the exposure amount, it is necessary that the total exposure amount fluctuates by a few percent or less, but in the case described above, with conventional equipment, there is no consideration given to excess amounts, so it is difficult to control the amount of exposure over a long period of time. However, it had the disadvantage that a stable exposure amount could not be obtained.
そこで本発明は、従来の欠点を解決し、光源の
光強度にかかわらず常に総露光量を一定にするよ
うに制御する露光装置を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to solve the conventional drawbacks and provide an exposure apparatus that controls the total exposure amount to be constant regardless of the light intensity of the light source.
以下、本発明の実施例を説明する。第5図は、
本発明の第1の実施例であり、第3図で示した回
路ブロツク、素子等と同一の働きをするものに関
しては、同一の番号を付してある。 Examples of the present invention will be described below. Figure 5 shows
This is the first embodiment of the present invention, and circuit blocks, elements, etc. that have the same functions as those shown in FIG. 3 are given the same numbers.
光検出器6の光電信号は増幅器11で増幅され
た後、電圧周波数変換器(以下、VFCとする)
30によつて光強度に比列した周波数のパルス信
号に変換される。このパルス信号のパルス数を計
数すれば、その計数値は露光量に比列した値にな
る。カウンタ31(以下、UC31とする)はそ
のパルス信号のパルス数の加算計数値SUを出力
する。上記増幅器11、VFC30、UC31によ
り本発明の測光回路を構成する。 The photoelectric signal from the photodetector 6 is amplified by an amplifier 11 and then sent to a voltage frequency converter (hereinafter referred to as VFC).
30, it is converted into a pulse signal with a frequency proportional to the light intensity. If the number of pulses of this pulse signal is counted, the counted value will be a value proportional to the exposure amount. The counter 31 (hereinafter referred to as UC31) outputs an added count value SU of the number of pulses of the pulse signal. The amplifier 11, VFC 30, and UC 31 constitute the photometric circuit of the present invention.
一方、増幅器11からの光電信号はアナログ・
デジタル変換器(以下、ADCとする)37に入
力して、測光した光強度に応じたデジタル信号
SLを出力する。演算回路38(以下、CUL38
とする)は、そのデジタル信号SLに基づいて、
所定の演算処理、実際にはシヤツターの閉成動作
時間に応じた値と信号SLの値との乗算、及び記
憶の動作を行ない、その演算結果のデジタル信号
SXを比較器39に出力する。このADC37と
CUL38は本発明の検出手段を構成する。比較
器39は外部より目標値ES(デジタル信号)を
設定可能であるとともに、目標値ESからCUL3
8のデジタル信号SXを減じた値を参照値として
保持(記憶)する。さらに比較器39はUC31
の計数値SUと参照値とを比較して、計数値SUと
参照値とが一致したとき、フリツプ・フロツプ回
路16に一致信号(シヤツター閉じ信号)を出力
する。これによつてシヤツターの閉成動作が開始
される。また、本実施例では機能的にCUL38
と比較器39の2つに分けて説明するが、実際に
はそれらCUL38と比較器39の働き等はマイ
クロコンピユータのようなデジタル計算器のプロ
グラムによつて実現される。尚、不図示ではある
が、シヤツター(第1図に示した回転板3)の回
転位置を検出するデイスクセンサーの如き位置検
出器が設けられ、シヤツターの開閉状態、特にシ
ヤツターの全開時点(開放動作完了時点)を
CUL38に知らせる。 On the other hand, the photoelectric signal from the amplifier 11 is analog
A digital signal corresponding to the photometered light intensity input to the digital converter (hereinafter referred to as ADC) 37
Output SL. Arithmetic circuit 38 (hereinafter referred to as CUL38)
) is based on its digital signal SL,
Predetermined arithmetic processing, in fact, multiplication of a value corresponding to the shutter closing operation time by the value of signal SL, and storage operation are performed, and the digital signal of the calculation result is generated.
SX is output to the comparator 39. With this ADC37
The CUL 38 constitutes the detection means of the present invention. The comparator 39 can set the target value E S (digital signal) from the outside, and can also set the CUL3 from the target value E S
The value obtained by subtracting the digital signal SX of 8 is held (stored) as a reference value. Furthermore, the comparator 39 is UC31
The count value SU and the reference value are compared, and when the count value SU and the reference value match, a match signal (shutter close signal) is output to the flip-flop circuit 16. This starts the shutter closing operation. In addition, in this embodiment, CUL38 is functionally
The CUL 38 and the comparator 39 will be explained separately, but in reality, the functions of the CUL 38 and the comparator 39 are realized by a program of a digital computer such as a microcomputer. Although not shown, a position detector such as a disk sensor is provided to detect the rotational position of the shutter (rotary plate 3 shown in FIG. at the time of completion)
Inform CUL38.
次に、本実施例の動作を第6図のフローチヤー
ト図を用いて説明する。露光動作開始前に、UC
31はクリアされ、比較器39には目標となる露
光量に比例した目標値ESが設定される。〔ステツ
プ100〕シヤツター開放動作開始と共に、UC
31はVFC30の出力するパルス数を計数して
いく。一方、ADC37は、光強度に比例したデ
ジタル信号SLを出力していく。シヤツター全開
時、すなわち、開放動作完了時〔ステツプ10
1〕に、そのときの信号SL(光強度)と、あら
かじめ測定しておいた閉成動作時間(第2図にお
ける時間tc―tb〔又はte―td〕)に比例したデジ
タル信号を乗算して、閉成動作期間中に露光され
る量(第4図中でEO―ES〔又はEO′―ES〕〕に
応じた信号SXを時刻ta(全開時)の直後に出力
する。比較器39はこの信号SXを入力して、設
定された目標値から信号SXの値を減じ、参照値
として保持する。〔ステツプ102〕その後、シ
ヤツターは全開状態で露光が行なわれ、UC31
は計数を続けていく。そして、UC31の計数信
号SUの値が参照値に達すると、〔ステツプ10
3〕比較器39は一致信号を出力し、前述のよう
にシヤツターの閉成動作が開始される。〔ステツ
プ104〕本実施例では予め測定しておいたシヤ
ツター閉成動作時間(tc―tb、又はte―td)とシ
ヤツター全開時の光強度とに基づいて、閉成動作
時間中のみの露光量(超過露光量)に応じた信号
SXをデジタル的に求めるようにした。しかしな
がら、これと同様の露光制御はアナログ的にも可
能である。そのためには、例えば第3図に示した
回路に、シヤツターの閉成動作時間に応じた電圧
と、シヤツター全開時における増幅器11の出力
電圧との乗算を行ない、その乗算値を保持する演
算回路と、その乗算値を目標値ESから減算した
参照値を比較器15に印加する差動増幅器とを設
ければよい。 Next, the operation of this embodiment will be explained using the flowchart shown in FIG. UC before starting the exposure operation.
31 is cleared, and a target value E S proportional to the target exposure amount is set in the comparator 39. [Step 100] At the same time as the shutter opening operation starts, the UC
31 counts the number of pulses output by the VFC 30. On the other hand, the ADC 37 outputs a digital signal S L proportional to the light intensity. When the shutter is fully opened, that is, when the opening operation is completed [Step 10
1], the signal S L (light intensity) at that time is multiplied by a digital signal proportional to the closing operation time (time tc - tb [or te - td] in Fig. 2) measured in advance. Then, a signal SX corresponding to the amount of light exposed during the closing operation period (E O - E S [or E O ' - E S ] in Fig. 4) is output immediately after time ta (when fully open). The comparator 39 inputs this signal SX, subtracts the value of the signal SX from the set target value, and holds it as a reference value. [Step 102] After that, exposure is performed with the shutter fully open, and the UC31
continues counting. Then, when the value of the count signal SU of UC31 reaches the reference value, [Step 10
3] The comparator 39 outputs a coincidence signal, and the shutter closing operation is started as described above. [Step 104] In this embodiment, the exposure amount only during the shutter closing operation time is determined based on the shutter closing operation time (tc-tb or te-td) measured in advance and the light intensity when the shutter is fully open. Signal according to (excess exposure amount)
I started looking for SX digitally. However, exposure control similar to this is also possible in an analog manner. To do this, for example, the circuit shown in FIG. 3 must be equipped with an arithmetic circuit that multiplies the voltage corresponding to the shutter closing operation time by the output voltage of the amplifier 11 when the shutter is fully open, and holds the multiplied value. , and a differential amplifier that applies a reference value obtained by subtracting the multiplied value from the target value E S to the comparator 15.
次に本発明の第2の実施例を第7図のフローチ
ヤート図に基づいて説明する。本実施例における
露光量制御は、第5図に示したCUL38と比較
器39の各機能を含む1つのデジタル計算器で実
現するものとして扱う。 Next, a second embodiment of the present invention will be described based on the flowchart of FIG. Exposure control in this embodiment is assumed to be realized by one digital calculator including the functions of the CUL 38 and comparator 39 shown in FIG.
ステツプ110のシヤツター開放の動作に先立
つて、UC31をクリアすることは第6図に示し
た動作と全く同様である。そしてステツプ111
で計数信号SUの値が参照値と一致したと判断さ
れたときは、次のステツプ112で一致信号を出
力してシヤツターの閉成動作を開始するととも
に、シヤツター閉成動作の開始時点までの露光量
E1(計数信号SU)を読み込む。されにシヤツタ
ーが完全に閉じたとき、ステツプ113でシヤツ
ターの閉成動作完了時点までの露光量E2(計数
信号SU)を読み込む。そして次のステツプ11
4で露光量E2とE1の差分(閉成動作期間中のみ
の露光量)E′を算出して記憶する。そしてステ
ツプ115で次の露光動作を行なうと判断された
ときは、ステツプ116に進んで、設定された目
標値ESから記憶した差分E′を減じて新たな参照
値とする。(参照値の更新)そして再びステツプ
110〜115が同様に繰り返されるが、ステツ
プ111で計数信号SUと比較する参照値はステ
ツプ116で求めた参照値である。 Clearing UC31 prior to the shutter opening operation in step 110 is exactly the same as the operation shown in FIG. And step 111
If it is determined in step 112 that the value of the count signal SU matches the reference value, a match signal is output in step 112 to start the shutter closing operation, and the exposure up to the start of the shutter closing operation is amount
Read E 1 (count signal SU). When the shutter is completely closed, the exposure amount E 2 (count signal SU) up to the time when the shutter closing operation is completed is read in step 113. And next step 11
In step 4, the difference E' between the exposure amounts E 2 and E 1 (the exposure amount only during the closing operation period) is calculated and stored. When it is determined in step 115 that the next exposure operation is to be performed, the process proceeds to step 116, where the stored difference E' is subtracted from the set target value E S to obtain a new reference value. (Update of reference value) Steps 110 to 115 are then repeated in the same manner, but the reference value compared with the count signal SU in step 111 is the reference value determined in step 116.
以上、本実施例によれば、シヤツターの閉成動
作時間にドリフトの如きゆるやかな変化が生じて
も、常に以前の露光動作のとき測定した、閉成動
作期間中のみの露光量(超過露光量)によつて、
後続の露光動作における露光制御を補正している
ので、さらに精度が向上する。 As described above, according to this embodiment, even if a gradual change such as a drift occurs in the shutter closing operation time, the exposure amount (excess exposure amount) measured only during the shutter closing operation period is always measured during the previous exposure operation. ),
Since the exposure control in the subsequent exposure operation is corrected, accuracy is further improved.
尚、シヤツターの閉成動作時間と開放動作時間
とがほぼ等しいときは、先行する露光動作のと
き、シヤツター開放動作期間(第2図のta―to)
中の露光量を記憶しておき、後続の露光動作のと
きに、その記憶した露光量で参照値を更新するこ
ともできる。 Furthermore, when the closing operation time and the opening operation time of the shutter are almost equal, the shutter opening operation period (ta-to in Fig. 2) is the same as that of the preceding exposure operation.
It is also possible to memorize the exposure amount during a subsequent exposure operation and update the reference value with the stored exposure amount during a subsequent exposure operation.
次に本発明の第3の実施例を第8図のフローチ
ヤート図に基づいて説明する。ステツプ120は
例えば本来露光すべきウエハとは別のウエハに対
して適正露光量が得られるように、ためし焼きを
行ない、そのときの超過露光量(シヤツター閉成
動作期間中の露光量)E′を、例えば第7図中の
ステツプ112,113,114と同様にして求
めるものである。次にステツプ121で、目標値
ESから超過露光量E′を引いた参照値を求め、以
後の露光動作のために、その参照値を設定(記
憶)する。ステツプ122からは本来の露光動作
であり、シヤツターを開放したのち、ステツプ1
23で参照値と計数信号SUの値とが一致したと
判断されると、次のステツプ124で一致信号が
出力され、シヤツターの閉成動作が開始される。
そして、ステツプ125で次の露光動作を行なう
ものと判断されたときは、再びステツプ122か
ら同様の動作が繰り返される。 Next, a third embodiment of the present invention will be described based on the flowchart of FIG. In step 120, for example, in order to obtain an appropriate exposure amount for a wafer other than the wafer that should be originally exposed, a trial printing is performed, and the excess exposure amount (exposure amount during the shutter closing operation period) at that time is calculated. ' is determined in the same manner as steps 112, 113, and 114 in FIG. 7, for example. Next, in step 121, a reference value is obtained by subtracting the excess exposure amount E' from the target value E S , and this reference value is set (stored) for subsequent exposure operations. The original exposure operation starts from step 122, and after opening the shutter, step 1 starts.
When it is determined in step 23 that the reference value and the value of the count signal SU match, a match signal is output in the next step 124, and the shutter closing operation is started.
Then, when it is determined in step 125 that the next exposure operation is to be performed, the same operation is repeated again from step 122.
本実施例の場合も、シヤツターの閉成動作時間
と開放動作時間とが等しいなら、ためし焼きの際
のシヤツター開放動作期間中の露光量を超過露光
量E′として測定することができる。 In the case of this embodiment as well, if the closing operation time and the opening operation time of the shutter are equal, the exposure amount during the shutter opening operation period during trial printing can be measured as the excess exposure amount E'.
以上本発明の各実施例において、シヤツターは
モータで回転するロータリーシヤツターとした
が、ソレノイドでシヤツターを往復運動させても
よいし、さらにシヤツター自体も回転運動以外、
直線的に運動するようなスライド式のシヤツター
にしてもよい。 In each of the embodiments of the present invention, the shutter is a rotary shutter rotated by a motor, but the shutter may be moved reciprocally by a solenoid, and furthermore, the shutter itself may be moved other than rotatably.
A sliding type shutter that moves in a straight line may also be used.
以上説明したように、本発明によればシヤツタ
ーの閉成動作期間中のみに露光される超過露光量
に応じた値を、常に適正露光量に応じた目標値に
対する補正値として導入しているので、常に目標
とする総露光量すなわち、適正露光量が得られる
と共に、ランプの劣化による影響もなくなり、き
わめて、高精度な露光制御ができる。 As explained above, according to the present invention, a value corresponding to the overexposure amount that is exposed only during the shutter closing operation period is always introduced as a correction value for the target value corresponding to the appropriate exposure amount. The target total exposure amount, that is, the appropriate exposure amount can always be obtained, and the influence of lamp deterioration is eliminated, making it possible to perform extremely high-precision exposure control.
特にシヤツターの開放動作時間と閉成動作時間
とが異なる場合であつても、正確な露光制御がで
きる。 In particular, even when the opening operation time and the closing operation time of the shutter are different, accurate exposure control can be performed.
また、超過露光量の測定を先行する露光動作の
ときに行ない、後続の露光動作のとき、その測定
した超過露光量で補正するようにすれば、シヤツ
ターの閉成動作時間にゆるやかなドリフトが生じ
ても、その影響を受けることなく、高精度な露光
制御が達成される。 Additionally, if the overexposure amount is measured during the preceding exposure operation and then corrected using the measured overexposure amount during the subsequent exposure operation, a gradual drift will occur in the shutter closing operation time. Highly accurate exposure control can be achieved without being affected by this.
第1図は、ウエハ又はフオトマスクの露光装置
の概略を示す図面、第2図は光源による露光強度
の特性を示す図、第3図は従来の露光制御におけ
る回路ブロツク図、第4図は従来の露光特性を示
す図、第5図は本発明の第1の実施例を示す回路
ブロツク図、第6図は本発明の第1の実施例によ
る動作を説明するフローチヤート図、第7図は本
発明の第2の実施例による動作を説明するフロー
チヤート図、第8図は本発明の第3の実施例によ
る動作を説明するフローチヤート図である。
主要部分の符号の説明、3……シヤツター、1
1,13,30,31……測光回路、15,1
6,17,39……制御手段、37,38……検
出手段。
Fig. 1 is a schematic diagram of a wafer or photomask exposure apparatus, Fig. 2 is a diagram showing the characteristics of exposure intensity by a light source, Fig. 3 is a circuit block diagram for conventional exposure control, and Fig. 4 is a diagram of a conventional exposure control system. FIG. 5 is a circuit block diagram showing the first embodiment of the present invention, FIG. 6 is a flowchart explaining the operation of the first embodiment of the present invention, and FIG. 7 is a diagram showing the operation of the first embodiment of the present invention. FIG. 8 is a flowchart diagram explaining the operation according to the second embodiment of the invention, and FIG. 8 is a flowchart diagram explaining the operation according to the third embodiment of the invention. Explanation of symbols of main parts, 3... Shutter, 1
1, 13, 30, 31...photometric circuit, 15, 1
6, 17, 39... control means, 37, 38... detection means.
Claims (1)
射する状態と、非照射にする状態とを切替えるシ
ヤツターと;該シヤツターの開放動作の開始時点
から、前記ウエハ又はフオトマスクへの露光量に
応じた測光値を出力する測光回路と;該測光値が
前記ウエハ又はフオトマスクへの所望の露光量に
応じた目標値と所定の関係になつたとき前記シヤ
ツターの閉成動作を開始する制御手段とを有する
露光装置において、前記シヤツターの閉成動作の
開始時点から閉成動作の完了時点までの超過露光
量を測定して、該超過露光量に相当する補正値を
検出する検出手段を有すると共に、前記制御手段
は該補正値を導入して、前記超過露光量を補正す
る如く前記シヤツターを動作させることを特徴と
するウエハ又はフオトマスクの露光装置。 2 前記検出手段は前記シヤツターの開放動作が
完了してから、前記シヤツターを通つた光の強度
を検出する回路と、該光強度の値と前記シヤツタ
ーの閉成動作時間の値とに基づいて、前記超過露
光量を予測演算する演算回路とを含むことを特徴
とする特許請求の範囲第1項記載の装置。 3 光源からの光をウエハ又はフオトマスクに照
射する状態と、非照射にする状態とを切替えるシ
ヤツターと;該シヤツターの開放動作の開始時点
から、前記ウエハ又はフオトマスクへの露光量に
応じた測光値を出力する測光回路と;該測光値が
前記ウエハ又はフオトマスクへの所望の露光量に
応じた目標値と所定の関係になつたとき、前記シ
ヤツターの閉成動作を開始する制御手段とを有す
る露光装置において、先行する露光動作のとき、
前記シヤツターの閉成動作の開始時点から閉成動
作の完了時点までの超過露光量に応じた補正値を
検出して記憶する検出手段を有すると共に、後続
の露光動作のとき前記制御手段は該記憶した補正
値を導入して前記超過露光量を補正する如く前記
シヤツターを動作させることを特徴とするウエハ
又はフオトマスクの露光装置。[Scope of Claims] 1. A shutter that switches between a state in which the wafer or photomask is irradiated with light from a light source and a state in which it is not irradiated; and an amount of exposure to the wafer or photomask from the start of the opening operation of the shutter; a photometric circuit that outputs a photometric value according to; a control means that starts a closing operation of the shutter when the photometric value has a predetermined relationship with a target value that corresponds to a desired amount of exposure to the wafer or photomask; The exposure apparatus has a detection means for measuring an excess exposure amount from the start of the closing operation of the shutter to the completion of the closing operation, and detecting a correction value corresponding to the excess exposure amount. . A wafer or photomask exposure apparatus, wherein the control means operates the shutter so as to correct the excess exposure amount by introducing the correction value. 2. The detection means includes a circuit for detecting the intensity of light passing through the shutter after the opening operation of the shutter is completed, and based on the value of the light intensity and the value of the closing operation time of the shutter, 2. The apparatus according to claim 1, further comprising an arithmetic circuit that predicts and calculates the excess exposure amount. 3. A shutter that switches the state of irradiating the wafer or photomask with light from the light source and the state of not irradiating it; from the start of the opening operation of the shutter, a photometric value corresponding to the amount of exposure to the wafer or photomask is calculated. an exposure apparatus comprising: a photometric circuit for output; and a control means for starting a closing operation of the shutter when the photometric value has a predetermined relationship with a target value corresponding to a desired amount of exposure to the wafer or photomask; In the preceding exposure operation,
The control means includes a detection means for detecting and storing a correction value corresponding to the excess exposure amount from the start of the shutter closing operation to the completion of the shutter closing operation, and the control means detects and stores a correction value corresponding to the excess exposure amount from the start of the shutter closing operation to the completion of the shutter closing operation. A wafer or photomask exposure apparatus, characterized in that the shutter is operated so as to correct the excess exposure amount by introducing a correction value determined by the shutter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17934780A JPS57101839A (en) | 1980-12-18 | 1980-12-18 | Exposure device for wafer or photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17934780A JPS57101839A (en) | 1980-12-18 | 1980-12-18 | Exposure device for wafer or photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57101839A JPS57101839A (en) | 1982-06-24 |
| JPS6214825B2 true JPS6214825B2 (en) | 1987-04-03 |
Family
ID=16064247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17934780A Granted JPS57101839A (en) | 1980-12-18 | 1980-12-18 | Exposure device for wafer or photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57101839A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5858730A (en) * | 1981-10-05 | 1983-04-07 | Hitachi Ltd | Projection alligner |
| JPS6070452A (en) * | 1983-09-28 | 1985-04-22 | Nippon Kogaku Kk <Nikon> | exposure equipment |
| JPH0715875B2 (en) * | 1984-12-27 | 1995-02-22 | キヤノン株式会社 | Exposure apparatus and method |
| JPS60198726A (en) * | 1984-03-23 | 1985-10-08 | Hitachi Ltd | Method and apparatus for adjusting quantity of exposure of x-ray exposure device |
| JPS61278140A (en) * | 1985-05-31 | 1986-12-09 | Fuji Photo Optical Co Ltd | Method of setting exposure time in exposure device for diffraction grating |
| JP2571054B2 (en) * | 1987-04-28 | 1997-01-16 | キヤノン株式会社 | Exposure apparatus and element manufacturing method |
| EP0694817B1 (en) | 1988-09-02 | 2000-03-22 | Canon Kabushiki Kaisha | An exposure apparatus |
| EP4730034A1 (en) * | 2024-10-21 | 2026-04-22 | ASML Netherlands B.V. | Shutter assembly for a lithographic apparatus |
-
1980
- 1980-12-18 JP JP17934780A patent/JPS57101839A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57101839A (en) | 1982-06-24 |
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