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JPS621566B2 - - Google Patents
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JPS621566B2 - - Google Patents

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Publication number
JPS621566B2
JPS621566B2 JP145382A JP145382A JPS621566B2 JP S621566 B2 JPS621566 B2 JP S621566B2 JP 145382 A JP145382 A JP 145382A JP 145382 A JP145382 A JP 145382A JP S621566 B2 JPS621566 B2 JP S621566B2
Authority
JP
Japan
Prior art keywords
silane
adsorbent
impurities
gas
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP145382A
Other languages
Japanese (ja)
Other versions
JPS58120511A (en
Inventor
Koji Gamo
Yoshio Moriwaki
Nobuyuki Yanagihara
Tsutomu Iwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57001453A priority Critical patent/JPS58120511A/en
Publication of JPS58120511A publication Critical patent/JPS58120511A/en
Publication of JPS621566B2 publication Critical patent/JPS621566B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はシランの精製法に関し、特に電子機器
等級(超高純度)のけい素、あるいは非晶質けい
素の製造に必要とされる高レベルの純度までシラ
ンを精製する方法に関する。 従来、シラン源中の不純物を最小限にするた
め、シランの製造プロセスにおいて高純度の化学
反応体を使用すること、密閉系において空気や水
蒸気をしめ出す系を用いること、あるいは様々な
複雑さをもつトラツプおよび蒸留器を用いること
などが提案されてきた。これらの提案は、長年に
わたつて使用されてきたけれども、なお工業上の
要求を満たすために、僅か数ppmの不純物をも
除去する方法が絶えず探し求められている。 本発明は、上記従来技術に鑑み、電子機器産業
によつて要求される最高純度規格を満たすことの
できるシランの精製法を提供するものである。す
なわち、本発明は、活性化された水素吸蔵用金属
または水素を吸蔵した金属水素化物を主な吸着剤
として使用した系内で、連続的あるいは間欠的
((一度、シランを貯えておく)に、シランと不純
物との混合物を通し、混合物中の不純物を除去す
るような高純度精製法である。さらに詳しく述べ
れば、本発明は、吸着剤として水素化により活性
化された水素吸蔵用金属粉末あるいは金属水素化
物粉末を収納した吸着筒帯域に、ガス状の不純物
含有シランを室温付近で導入して、前記吸着剤に
吸着あるいは吸蔵させ、不純物のみを吸着除去、
あるいは濃縮しその後空間上部の不純物をパージ
して除去する態様を有する工程を含むものであ
る。 本発明の精製法に導入される典型的なプロセス
シランは、約99.0重量%のシランおよび残部の不
純物を含有する。本法を適用して、特に除去しよ
うとする不純物は、()フツ素、二酸化炭素、
酸素、窒素、水蒸気、()中間分子量のシリコ
ーン、シロキサン、クロロシラン、四塩化けい
素、アルシン(AsH3)、ジボラン(B2H6)、ホス
フイン(PH3)などで、不純物()は数ppm〜
0.1重量%、不純物()は0.1〜1重量%単位で
混入している。 一般に、少なくとも一度、好ましくは複数回水
素を吸蔵−放出するサイクルを繰り返して水素活
性化された金属材料はもろく、サイクルを繰り返
すにつれて粉末化し、表面積が増大する。 本発明者らは、このように、一度水素化され、
脱水素化された金属材料あるいは一部水素を内蔵
した金属材料は、非常に活性で、上記シラン中の
不純物の吸着剤、吸蔵材として、以下に記すよう
に非常に好都合に作用し、優れた精製効果を示す
ことを見出した。特に、吸着剤として用いた金属
水素化物の常温(約20℃)での吸蔵平衡圧が10気
圧以下のものは、特に不純物の吸蔵能力が高く、
極めて活性で、優れた特性を示した。その代表例
がTi−Mn系合金、Ti−Zr−Mn系合金、Zr−Mn
系合金などの水素化−脱水素化合金であつた。 このように活性化された金属水素化物粉末ある
いは水素貯蔵用金属材料は、0.1μm〜数100μm
の粉粒体で、高い表面積を有し、粗製シランガス
中の不純物を吸着除去する。この粉粒状物質は、
粉粒状形態それ自体でも用いることができるし、
また帯域中に、シランガス状混合物を良好に循環
させるために、慣用の充填材と組合せ、焼結法な
どによつて多孔質材として使用することもでき
る。また、本法では、原料ガスは、10atm程度以
下に圧力を高めて導入し、吸着筒を通過させると
よい。 以下、本発明の実施例について説明する。 実施例 1 本実施例の精製装置の構成の概略を第1図に示
す。第1図に示した吸着剤2として、平均粒径約
20メツシユに粉砕したZrMn2合金を、吸着筒1内
に収納する。 まず吸着剤の前処理工程を記す。ガス取出弁5
の先端を油回転ポンプ、油拡散ポンプなどからな
る排気装置に接続し、予め系内を脱ガスする。こ
の際の温度は室温でもよいが、より高温程不純物
に対して活性となり、精製効果は大きい。次い
で、原料ガス導入弁4より高純度水素ガスを約9
気圧まで導入して水素化し、その後、パージ弁6
よりパージし、かつガス取出弁5より排気装置で
水素を放出するような水素化−脱水素化サイクル
を10回繰り返す。このような吸着剤の水素活性化
処理によつて、吸着剤2は自ら平均粉径約0.4μ
mに微粉化し、表面積が増大した。多数回目の水
素放出処理工程によつて活性化前処理は完了し、
この時吸着剤は不純物の吸着除去に対して極めて
高い効果を有するものとなつた。なお、図中、3
は吸着剤2が吸着筒1から外部へ流出するのを防
止するためのフイルタで、多孔質金属材料からで
きている。 以上のように前処理された吸着筒1に原料ガス
導入弁4から室温のもとで不純物含有シランを装
置内に導入し、全系を閉じた。導入した原料シラ
ンは、次の成分を含有していた。
The present invention relates to a method for purifying silane, and in particular to a method for purifying silane to the high level of purity required for the production of electronic grade (ultra-high purity) silicon or amorphous silicon. Traditionally, minimizing impurities in silane sources has involved using highly pure chemical reactants in the silane manufacturing process, using systems that exclude air or water vapor in closed systems, or using various complexities. The use of traps and distillers have been proposed. Although these proposals have been used for many years, there is still a constant search for ways to remove even only a few ppm of impurities in order to meet industrial requirements. In view of the above prior art, the present invention provides a method for purifying silane that can meet the highest purity standards required by the electronics industry. That is, the present invention provides continuous or intermittent (once silane is stored) system using activated hydrogen storage metal or metal hydride that stores hydrogen as the main adsorbent. This is a high-purity purification method in which impurities in the mixture are removed by passing through a mixture of silane and impurities.More specifically, the present invention utilizes a metal powder for hydrogen storage activated by hydrogenation as an adsorbent. Alternatively, gaseous impurity-containing silane is introduced at around room temperature into an adsorption cylinder zone containing metal hydride powder, and is adsorbed or occluded by the adsorbent to adsorb and remove only the impurities.
Alternatively, it includes a step of concentrating and then purging and removing impurities in the upper part of the space. A typical process silane introduced into the purification method of the present invention contains about 99.0% by weight silane and the balance impurities. The impurities to be removed by applying this method are () fluorine, carbon dioxide,
Oxygen, nitrogen, water vapor, intermediate molecular weight silicone, siloxane, chlorosilane, silicon tetrachloride, arsine (AsH 3 ), diborane (B 2 H 6 ), phosphine (PH 3 ), etc., and impurities () are few ppm. ~
0.1% by weight, and impurities () are mixed in units of 0.1 to 1% by weight. In general, metal materials that have been hydrogen-activated by repeating hydrogen storage-desorption cycles at least once, preferably multiple times, are brittle and become powdered as the cycles are repeated, increasing their surface area. The inventors thus demonstrated that once hydrogenated,
Dehydrogenated metal materials or metal materials containing some hydrogen are very active and act very favorably as adsorbents and occluding materials for impurities in the silane, as described below, and have excellent properties. It was found that this product has a purifying effect. In particular, metal hydrides used as adsorbents with an equilibrium storage pressure of 10 atm or less at room temperature (approximately 20°C) have a particularly high ability to absorb impurities.
It was extremely active and showed excellent properties. Typical examples are Ti-Mn alloy, Ti-Zr-Mn alloy, Zr-Mn
It was a hydrogenation-dehydrogenation alloy such as a series alloy. The metal hydride powder or hydrogen storage metal material activated in this way has a size of 0.1 μm to several 100 μm.
This powder has a high surface area and adsorbs and removes impurities in crude silane gas. This powdery substance is
The granular form itself can also be used;
In order to ensure good circulation of the silane gaseous mixture in the zone, it can also be used as a porous material in combination with conventional fillers, by sintering, etc. Further, in this method, it is preferable that the raw material gas is introduced at a high pressure of about 10 atm or less and passed through the adsorption cylinder. Examples of the present invention will be described below. Example 1 The outline of the configuration of the purification apparatus of this example is shown in FIG. 1. As the adsorbent 2 shown in Figure 1, the average particle size is approximately
A ZrMn 2 alloy pulverized into 20 meshes is stored in an adsorption cylinder 1. First, the adsorbent pretreatment process will be described. Gas take-off valve 5
Connect the tip of the pump to an exhaust device consisting of an oil rotary pump, oil diffusion pump, etc. to degas the system in advance. The temperature at this time may be room temperature, but the higher the temperature, the more active it is against impurities and the greater the purification effect. Next, about 90% of high-purity hydrogen gas is supplied from the raw material gas introduction valve 4.
Hydrogen is introduced to atmospheric pressure, and then purge valve 6
The hydrogenation-dehydrogenation cycle is repeated 10 times in which hydrogen is purged further and hydrogen is released from the gas take-off valve 5 by the exhaust device. Through this hydrogen activation treatment of the adsorbent, the adsorbent 2 has an average particle diameter of approximately 0.4μ.
The surface area was increased. The activation pretreatment is completed by the multiple hydrogen release treatment steps,
At this time, the adsorbent became extremely effective in adsorbing and removing impurities. In addition, in the figure, 3
is a filter for preventing the adsorbent 2 from flowing out from the adsorption column 1, and is made of a porous metal material. Impurity-containing silane was introduced into the adsorption cylinder 1 pretreated as described above through the raw material gas introduction valve 4 at room temperature, and the entire system was closed. The raw material silane introduced contained the following components.

【表】 シランと不純物との混合物が接触する装置のす
べては、SUS316ステンレス鋼から作つた。系を
閉じてから、約5分間経過後、パージ弁6より一
度瞬間的にごく少量のシランをパージした後、精
製ガスをガスクロマトグラフおよび質量分析によ
つて分析すると、シランが約99.999重量%以上の
純度であり、精製効果が高いことがわかる。 実施例 2 平均粒径100メツシユに粉砕したTiMn1.5合金
を、慣用の結着剤を使用した焼結法により板状に
形成してガスの流通を良くし吸着剤12とした。
装置は第2図に示した構成を用いた。実施例1と
同様の手段を用い、室温のもと約30気圧で水素活
性化を繰り返した後、原料ガスを原料ガス導入弁
14から連続的に吸着筒11内に導入し、連続的
に精製ガス取出弁15から取り出した。13はフ
イルタである。 本実施例の原料ガスの純度は99.9重量%であ
り、残部は各々数ppm〜数10ppmの不純物、す
なわち酸素、窒素、炭素、フツ素、水蒸気であつ
た。前例と同様に、精製ガスを分析した結果、
99.9999重量%の純度を示し、極めて優れた精製
効果があることを確認した。 実施例 3 第3図に本実施例の装置の縦断面概略図を示し
た。 約0.1mm径に粉砕したTi0.5Zr0.5Mn1.7合金を固
めて多孔性板状に成形し、吸着剤22として吸着
筒21に収納した。また板状吸着剤の間には、ガ
スがスムーズに流れるように、非吸着材から構成
された多孔質板26を配置した。水素による活性
化処理は、実施例1と同様の条件で行い、その後
の操作は、実施例2と同様に、連続的に原料シラ
ンガス導入弁24から導入し、連続的に精製シラ
ンガスを取出弁25から取り出す方法を用いた。
図中、23はフイルタである。精製ガスの純度を
前例と同様に分析した結果、本例においても、シ
ランガスの純度は向上し、優れた精製効果がある
ことがわかつた。 実施例 4 精製能力を高めるため、第4図に示すように、
実施例2で記した装置システムを多段にした。図
のように焼結金属からなる多孔質金属材料36を
隔壁とし、その間に水素化−脱水素化工程により
活性化されたZr−Mn系金属水素化物粉末32を
配置し、吸着剤として吸着筒31内に収納した。
37は吸着した不純物を除去するための脱ガス再
生用、かつ吸着効果を高めるためのヒータであ
り、必要に応じ、適宜使用することができる。3
3は吸着剤粉末の流出、飛散防止用フイルタであ
り、34は原料ガス導入弁、35は精製ガス取出
弁である。本例は、連続的に流す原料ガスの速度
を大きくとることができ、しかもシランの精製効
果は前例よりも高いことを確認した。 なお、本法で用いられる装置および吸着剤以外
の他の材料は、シランおよび不純物に対して不活
性でかつ各帯域に施される温度および圧力に耐え
ることができ、更に系中に不純物を放離しない
様々な物質、例えばステンレス鋼SUS304および
SUS316並びに多割合のニツケルと、少割合の銅
を含有した合金などが用いられる。 以上のように本発明は、水素吸蔵用金属材料を
吸着剤として用いたシランの精製方法であり、簡
単な構成を有する装置を用い、簡便な操作でかつ
比較的低価格で優れた精製効果を得ることができ
るものである。
[Table] All of the equipment in which the silane and impurity mixture came into contact was made from SUS316 stainless steel. Approximately 5 minutes after the system was closed, a very small amount of silane was instantly purged from the purge valve 6, and the purified gas was analyzed by gas chromatography and mass spectrometry, and the silane content was approximately 99.999% by weight or more. It can be seen that the purification effect is high. Example 2 A TiMn 1.5 alloy pulverized to an average particle size of 100 mesh was formed into a plate shape by a sintering method using a conventional binder to improve gas flow, and an adsorbent 12 was prepared.
The configuration of the apparatus shown in FIG. 2 was used. After repeating hydrogen activation at room temperature and about 30 atmospheres using the same means as in Example 1, the raw material gas is continuously introduced into the adsorption column 11 from the raw material gas introduction valve 14 and purified continuously. The gas was taken out from the gas take-off valve 15. 13 is a filter. The purity of the raw material gas in this example was 99.9% by weight, and the remainder was impurities ranging from several ppm to several tens of ppm, namely oxygen, nitrogen, carbon, fluorine, and water vapor. Similar to the previous example, as a result of analyzing the purified gas,
It showed a purity of 99.9999% by weight, confirming that it has an extremely excellent purification effect. Example 3 FIG. 3 shows a schematic vertical cross-sectional view of the apparatus of this example. A Ti 0 .5 Zr 0 .5 Mn 1 .7 alloy pulverized to a diameter of about 0.1 mm was solidified and formed into a porous plate shape, which was housed in an adsorption cylinder 21 as an adsorbent 22 . Furthermore, porous plates 26 made of a non-adsorbent material were arranged between the plate-shaped adsorbents so that gas could flow smoothly. The activation treatment with hydrogen was performed under the same conditions as in Example 1, and the subsequent operations were as in Example 2, in which raw silane gas was continuously introduced through the inlet valve 24 and purified silane gas was continuously introduced through the outlet valve 25. We used the method of extracting from.
In the figure, 23 is a filter. As a result of analyzing the purity of the purified gas in the same manner as in the previous example, it was found that in this example as well, the purity of the silane gas was improved and there was an excellent purification effect. Example 4 In order to increase the purification capacity, as shown in Fig. 4,
The apparatus system described in Example 2 was multistaged. As shown in the figure, a porous metal material 36 made of sintered metal is used as a partition wall, and Zr-Mn-based metal hydride powder 32 activated by a hydrogenation-dehydrogenation process is placed between them, and an adsorption column is used as an adsorbent. I stored it in 31.
Reference numeral 37 is a heater for degassing regeneration to remove adsorbed impurities and for enhancing the adsorption effect, and can be used as necessary. 3
3 is a filter for preventing outflow and scattering of the adsorbent powder, 34 is a raw gas inlet valve, and 35 is a purified gas outlet valve. In this example, it was confirmed that the rate of continuous flow of the raw material gas could be increased, and the silane purification effect was higher than in the previous example. The equipment and other materials used in this method, other than the adsorbent, are inert to silane and impurities, can withstand the temperatures and pressures applied to each zone, and do not release impurities into the system. Various materials that do not release, such as stainless steel SUS304 and
SUS316 and alloys containing a large proportion of nickel and a small proportion of copper are used. As described above, the present invention is a method for purifying silane using a metal material for hydrogen storage as an adsorbent, which uses a device with a simple configuration, and achieves excellent purification effects with simple operation and at a relatively low cost. It is something that can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である間欠式システ
ムを有する精製装置の縦断面概略図、第2図及び
第3図は他の実施例である連続式システムを有す
る装置の縦断面略図、第4図は他の実施例で、よ
り精製効果を高めるために第2図の実施例を直列
に3段接続した装置の縦断面略図である。 1……吸着筒、2……吸着剤、3……フイル
タ、4……原料ガス導入弁、5……ガス取出弁、
6……パージ弁。
FIG. 1 is a schematic vertical cross-sectional view of a purification apparatus having an intermittent system, which is one embodiment of the present invention, and FIGS. FIG. 4 is a schematic vertical cross-sectional view of another embodiment of an apparatus in which three stages of the embodiment of FIG. 2 are connected in series in order to further enhance the purification effect. 1...Adsorption cylinder, 2...Adsorbent, 3...Filter, 4...Material gas introduction valve, 5...Gas extraction valve,
6...Purge valve.

Claims (1)

【特許請求の範囲】 1 水素化−脱水素化処理により活性化した水素
吸蔵用金属材料または金属水素化物を、シラン中
に含有する不純物の主たる吸着剤としてシランを
精製することを特徴とするシランの精製法。 2 前記吸着剤として用いた材料の常温(約20
℃)での水素吸蔵平衡圧力が10気圧以下である特
許請求の範囲第1項記載のシランの精製法。
[Scope of Claims] 1. A silane characterized in that the silane is purified by using a metal material for hydrogen storage or a metal hydride activated by hydrogenation-dehydrogenation treatment as the main adsorbent for impurities contained in the silane. Purification method. 2 The room temperature of the material used as the adsorbent (approximately 20
2. The method for purifying silane according to claim 1, wherein the hydrogen storage equilibrium pressure at 10°C (°C) is 10 atm or less.
JP57001453A 1982-01-07 1982-01-07 Silane purification method Granted JPS58120511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001453A JPS58120511A (en) 1982-01-07 1982-01-07 Silane purification method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001453A JPS58120511A (en) 1982-01-07 1982-01-07 Silane purification method

Publications (2)

Publication Number Publication Date
JPS58120511A JPS58120511A (en) 1983-07-18
JPS621566B2 true JPS621566B2 (en) 1987-01-14

Family

ID=11501860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001453A Granted JPS58120511A (en) 1982-01-07 1982-01-07 Silane purification method

Country Status (1)

Country Link
JP (1) JPS58120511A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163515A (en) * 1984-09-03 1986-04-01 Mitsui Toatsu Chem Inc Production of monosilane
JPS6163518A (en) * 1984-09-03 1986-04-01 Mitsui Toatsu Chem Inc High-purity monosilane
KR960010082B1 (en) * 1988-09-26 1996-07-25 니혼 파이오닉스 가부시끼가이샤 Purification method of gaseous hydride
JPH0694367B2 (en) * 1990-01-19 1994-11-24 大阪チタニウム製造株式会社 Method for producing polycrystalline silicon
DE4005695A1 (en) * 1990-02-20 1991-08-29 Hydrid Wasserstofftech CHEMICAL SORROW-METAL ALLOY AND GAS PURIFICATION METHOD
CN109908892A (en) * 2017-12-12 2019-06-21 中国科学院大连化学物理研究所 A kind of ultrapure hydrogen purification adsorbent material and application

Also Published As

Publication number Publication date
JPS58120511A (en) 1983-07-18

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