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JPS6216474B2 - - Google Patents
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JPS6216474B2 - - Google Patents

Info

Publication number
JPS6216474B2
JPS6216474B2 JP56080076A JP8007681A JPS6216474B2 JP S6216474 B2 JPS6216474 B2 JP S6216474B2 JP 56080076 A JP56080076 A JP 56080076A JP 8007681 A JP8007681 A JP 8007681A JP S6216474 B2 JPS6216474 B2 JP S6216474B2
Authority
JP
Japan
Prior art keywords
circuit
semiconductor integrated
function
integrated circuit
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56080076A
Other languages
Japanese (ja)
Other versions
JPS57196559A (en
Inventor
Tsuneo Mano
Tatsuo Baba
Tsuneo Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8007681A priority Critical patent/JPS57196559A/en
Publication of JPS57196559A publication Critical patent/JPS57196559A/en
Publication of JPS6216474B2 publication Critical patent/JPS6216474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/22Means for limiting or controlling the pin/gate ratio

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)

Description

【発明の詳細な説明】 本発明は、外部信号の入力端子の数を増加させ
ることなしに、回路機能の追加を可能とする半導
体集積回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit that allows circuit functions to be added without increasing the number of input terminals for external signals.

第1図は、何らかの機能を有する回路を半導体
基板1の上に複数個集積化した従来の半導体集積
回路の一構成例である。ここで、P,Q,R0
……R7は入力信号、2は入力信号Pから同相の
出力信号Pを発生するバツフア回路、3は入力信
号Qから逆相の出力信号を発生するバツフア回
路、4は入力信号R0から同相及び逆相の2つの
相補的な出力信号R0を発生するバツフア
回路、5はPを入力とするバツフア回路2の出力
Pによつて第1の機能をする回路、6はQを入力
とするバツフア回路3の出力を用いて第2の機
能をする回路、7はR0,……,R7を入力とする
8個のバツフア回路4の出力R0,……,
R7を用いて第3の機能をする回路であ
る。この第1図の半導体集積回路に対してある種
の回路機能を追加する場合、従来の技術では新た
な半導体集積回路は例えば第2図に示す構成とな
る。ここでは追加機能として次の2つを採り上げ
た。
FIG. 1 shows an example of the configuration of a conventional semiconductor integrated circuit in which a plurality of circuits having certain functions are integrated on a semiconductor substrate 1. As shown in FIG. Here, P, Q, R 0 ,
... R7 is an input signal, 2 is a buffer circuit that generates an in-phase output signal P from input signal P, 3 is a buffer circuit that generates an opposite-phase output signal from input signal Q, and 4 is an in-phase signal from input signal R0 . and a buffer circuit that generates two complementary output signals R 0 and 0 of opposite phase, 5 is a circuit that performs the first function by the output P of the buffer circuit 2 which receives P as input, and 6 has Q as input. 7 is a circuit that performs the second function using the output of the buffer circuit 3, and 7 is the output R 0 , 0 , ..., of the eight buffer circuits 4 whose inputs are R 0 , .
This is a circuit that uses R 7 and 7 to perform the third function. When a certain kind of circuit function is added to the semiconductor integrated circuit shown in FIG. 1, the new semiconductor integrated circuit has a configuration shown in FIG. 2, for example, according to the conventional technology. Here, we have introduced the following two additional features:

(1) 出力Pが高レベルの場合に限り選択的に必要
となる第4の機能 (2) 回路7の動作を診断するためにR7
一時的に両方共低レベルとする第5の機能 機能(1)を追加するために第4の機能をする回路
8を制御する内部信号Sが必要であり、第2図の
例ではこの信号Sを入力信号Sによつて作り出す
構成としている。又機能(2)を追加するために入力
信号R′7を追加してR7を独立に設定できる
構成としている。即ち、従来の半導体集積回路に
おいては新たな機能を追加する場合には、1つの
追加機能に対して少なくとも1つの入力信号を追
加する必要があり、従つて、入力端子の数を増加
させる必要があつた。このような構成となつてい
るので、多くの機能を有する半導体集積回路は端
子数が多く、小形化が困難であるという欠点があ
つた。また、端子数の限られている半導体集積回
路では多くの機能を実現できないという欠点があ
つた。
(1) A fourth function that is selectively required only when the output P is at a high level. (2) A fifth function that temporarily lowers both R 7 and 7 to a low level in order to diagnose the operation of the circuit 7. In order to add function (1), an internal signal S is required to control the circuit 8 that performs the fourth function, and in the example shown in Fig. 2, this signal S is generated by the input signal S. . In addition, in order to add function (2), an input signal R'7 is added, so that R7 and R7 can be set independently. That is, when adding a new function to a conventional semiconductor integrated circuit, it is necessary to add at least one input signal for each additional function, and therefore it is necessary to increase the number of input terminals. It was hot. Due to this configuration, a semiconductor integrated circuit having many functions has a large number of terminals, which makes it difficult to miniaturize the semiconductor integrated circuit. Another drawback is that semiconductor integrated circuits with a limited number of terminals cannot realize many functions.

本発明は、これらの欠点を除去するために、入
力端子を共用化して端子数を増加せずに回路機能
の追加を可能にした半導体集積回路を提供するも
のである。
In order to eliminate these drawbacks, the present invention provides a semiconductor integrated circuit in which input terminals are shared and circuit functions can be added without increasing the number of terminals.

以下図面により本発明を詳細に説明する。 The present invention will be explained in detail below with reference to the drawings.

第3図は本発明の実施例であり、第1図に示し
た半導体集積回路に対して入力信号の総数を増加
させることなしに2種類の機能を追加した半導体
集積回路の構成を示している。追加機能としては
従来の技術の説明の項で採り上げたものと同様の
2種類の機能(1)、(2)とする。ここで、9はP又は
R7の入力信号の電圧をある基準電圧と比較して
制御信号S又はS′を発生する比較回路であり、例
えば第4図のように構成される。Sは第4の機能
をする回路8に接続されているため、追加機能(1)
は入力信号PをSが発生するような電圧にするこ
とによつて得られる。又、10はS′によつて回路
7に接続される信号R7を共に低レベルと
する制御回路の一構成例である。入力信号R7
S′が発生するような電圧にすることによつて、
R7を共に低レベルにすることが出来、追
加機能(2)を実現している。
FIG. 3 is an embodiment of the present invention, and shows the configuration of a semiconductor integrated circuit in which two types of functions are added to the semiconductor integrated circuit shown in FIG. 1 without increasing the total number of input signals. . The additional functions are the same two types of functions (1) and (2) as those mentioned in the description of the conventional technology. Here, 9 is P or
This is a comparison circuit that generates a control signal S or S' by comparing the voltage of the input signal of R7 with a certain reference voltage, and is configured as shown in FIG. 4, for example. Since S is connected to circuit 8 which performs the fourth function, additional function (1)
can be obtained by setting the input signal P to such a voltage that S is generated. Further, 10 is an example of the configuration of a control circuit that sets both signals R 7 and 7 connected to the circuit 7 by S' to a low level. Input signal R 7
By setting the voltage such that S′ occurs,
Both R 7 and 7 can be reduced to a low level, realizing additional function (2).

第4図に示した比較回路は、Q1〜Q6の6個の
MOSトランジスタと1個のインバータからな
り、まずクロツクφによつてコンデンサC1
C2を充電して節点N1,N2を基準電圧となる高電
位にしておく。次に、φを低レベルにした状態
で入力端子R7又はPにある電圧を印加し、C2
電荷を放電させるかあるいは元のままの状態とす
る。次に、クロツクφを印加してQ6をオンの
状態としフリツプフロツプを構成しているQ1
Q2によつてコンデンサC2の状態を検知し、その
結果をインバータを通して出力するコンデンサ
C2の電荷を放電させない状態でφを印加した
場合には出力S又はS′が高レベルとなり、コンデ
ンサC2の電荷を放電させた状態では出力が低レ
ベルとなるようにQ1,Q2をやや大きめに設定し
ておけば、上述したように追加機能が実現でき
る。C2の放電はQ3を通して入力端子R7又はPか
ら行うことができる。
The comparator circuit shown in Fig. 4 has six
Consisting of a MOS transistor and one inverter, first the capacitor C 1 ,
C 2 is charged to bring the nodes N 1 and N 2 to a high potential, which is the reference voltage. Next, a certain voltage is applied to the input terminal R 7 or P with φ 1 set to a low level, and the charge on C 2 is discharged or left in its original state. Next, apply the clock φ 2 to turn on Q 6 and turn on Q 1 , which constitutes the flip-flop.
A capacitor that detects the state of capacitor C 2 by Q 2 and outputs the result through the inverter.
Q 1 , Q so that when φ 2 is applied without discharging the charge of capacitor C 2 , the output S or S' becomes high level, and when the charge of capacitor C 2 is discharged, the output becomes low level . By setting 2 to a slightly larger value, additional functions can be realized as described above. Discharging of C 2 can take place from input terminal R 7 or P through Q 3 .

例えば、比較回路を構成しているMOSトラン
ジスタの閾値電圧を1V、VDDを5V、クロツクφ
の高レベルを6Vに設定すると、節点N1,N2
規準電圧は5Vとなる。この後の動作としては、
入力端子R7又はPの電圧レベルが4V未満の場合
はC2の電荷がMOSトランジスタQ3を通して放電
し、同じく入力電圧レベルが4V以上の場合はC2
の電荷の放電は生じない。即ちこの例では入力電
圧レベル4Vを境界として、4V以上の電圧が入力
端子に印加された場合に比較回路から制御信号が
送出される。
For example, the threshold voltage of the MOS transistor that makes up the comparison circuit is 1V, V DD is 5V, and the clock φ
When the high level of node N 1 and N 2 is set to 6V, the reference voltage of nodes N 1 and N 2 becomes 5V. The action after this is:
If the voltage level of input terminal R7 or P is less than 4V, the charge of C2 will be discharged through MOS transistor Q3 , and if the input voltage level is 4V or more, the charge of C2 will be discharged.
No discharge of charges occurs. That is, in this example, when a voltage of 4V or more is applied to the input terminal with the input voltage level of 4V as the boundary, a control signal is sent from the comparator circuit.

又、上記の例ではR7を共に低レベルに
する場合について説明したが、制御回路10の構
成を変えることにより、S′によつてR7
共に高レベルにすることも容易にできる。
Further, in the above example, the case where both R 7 and 7 are set to a low level is explained, but by changing the configuration of the control circuit 10, it is also easy to set both R 7 and 7 to a high level by S'. Can be done.

以上説明したように、本発明は入力端子を共用
化して端子数を増加せずに回路機能の追加を可能
としているから、端子数の限られている場合でも
多くの機能を搭載した半導体集積回路を実現でき
るという利点がある。
As explained above, the present invention makes it possible to add circuit functions without increasing the number of terminals by sharing input terminals, so even if the number of terminals is limited, the semiconductor integrated circuit can be equipped with many functions. It has the advantage that it can be realized.

本発明は、例えばメモリ用アドレスバツフア制
御回路として用いることができる。
The present invention can be used, for example, as a memory address buffer control circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体集積回路の一例を示すブ
ロツク図、第2図は第1図の半導体集積回路に2
つの機能を追加した場合の従来の半導体集積回路
の1例を示すブロツク図、第3図は本発明を適用
した半導体集積回路の実施例を示すブロツク図、
第4図は本発明に用いる比較回路の一構成例であ
る。 1……半導体基板、2……同相の出力信号を発
生するバツフア回路、3……逆相の出力信号を発
生するバツフア回路、4……相補的出力信号を発
生するバツフア回路、5……第1の機能をする回
路、6……第2の機能をする回路、7……第3の
機能をする回路、8……第4の機能をする回路
(追加機能(1)に対応)、9……比較回路、10……
第5の機能をする制御回路(追加機能(2)に対
応)。
Figure 1 is a block diagram showing an example of a conventional semiconductor integrated circuit, and Figure 2 is a block diagram showing an example of a conventional semiconductor integrated circuit.
Fig. 3 is a block diagram showing an example of a conventional semiconductor integrated circuit with two additional functions;
FIG. 4 shows an example of the configuration of a comparison circuit used in the present invention. DESCRIPTION OF SYMBOLS 1...Semiconductor substrate, 2...Buffer circuit that generates an in-phase output signal, 3...Buffer circuit that generates an opposite-phase output signal, 4...Buffer circuit that generates a complementary output signal, 5...Buffer circuit that generates a complementary output signal. Circuit that performs the first function, 6...Circuit that performs the second function, 7...Circuit that performs the third function, 8...Circuit that performs the fourth function (corresponding to additional function (1)), 9 ...Comparison circuit, 10...
Control circuit that performs the fifth function (corresponds to additional function (2)).

Claims (1)

【特許請求の範囲】[Claims] 1 1つの入力信号からその入力信号と同相又は
逆相の出力信号あるいは同相及び逆相の2つの相
補出力信号を発生するバツフア回路を複数個有す
る半導体集積回路において、上記バツフア回路で
使用する入力信号の電圧をある規準電圧と比較し
た結果を示す制御信号を発生する回路と、前記制
御信号を用いて前記バツフア回路の出力信号を両
方共に低電位もしくは高電位に保つように制御す
る回路とを有することを特徴とする半導体集積回
路。
1. In a semiconductor integrated circuit having a plurality of buffer circuits that generate from one input signal an output signal that is in-phase or anti-phase with the input signal, or two complementary output signals that are in-phase and anti-phase, the input signal used in the buffer circuit. a circuit that generates a control signal indicating the result of comparing the voltage of the buffer circuit with a certain reference voltage, and a circuit that uses the control signal to control the output signals of the buffer circuit so that both of the output signals are maintained at a low potential or a high potential. A semiconductor integrated circuit characterized by:
JP8007681A 1981-05-28 1981-05-28 Semiconductor integrated circuit Granted JPS57196559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8007681A JPS57196559A (en) 1981-05-28 1981-05-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8007681A JPS57196559A (en) 1981-05-28 1981-05-28 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57196559A JPS57196559A (en) 1982-12-02
JPS6216474B2 true JPS6216474B2 (en) 1987-04-13

Family

ID=13708113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8007681A Granted JPS57196559A (en) 1981-05-28 1981-05-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57196559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200092369A (en) * 2018-02-06 2020-08-03 미쓰비시 마테리알 가부시키가이샤 Silver coated resin particles

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622278A (en) * 1979-07-27 1981-03-02 Fujitsu Ltd Decoder selection system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200092369A (en) * 2018-02-06 2020-08-03 미쓰비시 마테리알 가부시키가이샤 Silver coated resin particles
US11542381B2 (en) 2018-02-06 2023-01-03 Mitsubishi Materials Corporation Silver-coated resin particle

Also Published As

Publication number Publication date
JPS57196559A (en) 1982-12-02

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