JPS6217028B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film manufacturing apparatus used for manufacturing magnetic tapes and sheets in vacuum, or manufacturing multilayer thin films for electronic materials on ceramic substrates. It is something.

Structure of Conventional Examples and Problems Therein In recent years, with the demand for improved magnetic recording density, thin films of metals and alloys have been manufactured in vacuum and used as recording media. In this case, methods such as vapor deposition or sputtering are used to laminate multiple layers of different materials in a vacuum chamber, and this method is useful for continuous production. However, it is difficult to investigate the characteristics (film thickness, electrical, crystalline, magnetic properties) of only one type of thin film in a multilayered thin film because it is difficult to distinguish it from other thin film layers. Ta. Furthermore, even if they could be distinguished, the characteristics of the thin film as a single substance would be lost, making it inconvenient for purposes such as investigating manufacturing conditions.

FIG. 1 shows an outline of a conventional continuous sputtering device. In the figure, a vacuum chamber 3 is maintained at an appropriate vacuum level by a rotary pump 1 and a diffusion pump 2, and a polymer film 5 prepared on a delivery roll 4 is moved in the direction of arrow 11 via guide rollers 6, 6' and a cooling can 7. It is taken up by a take-up roller 8. At this time, the thin film material source 12 is laminated on the polymer film 5 by sputtering or vapor deposition to form a thin film forming film 5'. Mask 9 to prevent thin film adhesion
Set up. The effect of this mask 9 will be explained using FIG. 2. FIG. 2 is a view of the polymer film 5 viewed from the side of the thin film material source 12. An opening 10 is provided in the center of the mask 9, and the polymer film 5 flows on the back side of the opening 10 from the side a to the direction a'. Flowing. The thin film material that has passed through the opening 10 is laminated on the polymer film 5 to form a thin film layer 50, and flows out to the side a'. The width of the thin film layer 50 is equal to the width of the opening 10 and is also located symmetrically with respect to the center line aa' of the polymer film 5. Even if the second and third thin films are sequentially sputtered in this state, the resulting laminated film does not change from the position of the thin film layer 50, and the position where a single thin film layer appears on the polymer film 5 is It's nowhere.

Therefore, it was impossible to examine the properties of the thin film as a single substance, and it was inconvenient to examine the manufacturing conditions.

Purpose of the Invention The present invention has been made to solve the above-mentioned drawbacks, and it is an object of the present invention to provide a thin film manufacturing apparatus that allows the characteristics of any single thin film in a multilayer thin film to be inspected at any location. purpose.

Structure of the Invention The present invention achieves the above object, and includes a cylindrical can for winding a film medium in a vacuum chamber, and at least one evaporation source provided opposite to the can. A mask having an aperture is installed between the evaporation source and the relative position of the aperture and the film medium is made different when each thin film is formed.

DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. The basic configuration of this embodiment is shown in FIG. 1, and is characterized by its mask portion.

The first embodiment of the present invention is shown in FIGS. 1, 3, and 4.
This will be explained using figures. The experiment was carried out using an apparatus with the shape shown in Figure 1, and the sample base film 5 was 50 μm thick and wide.
Approximately 200 mm of polyester is placed on feed roll 4.
m was installed. Mask 9 during sputtering is the third
The shape shown in the figure was used. The feature of this mask is that the outer ends 41 and 42 of the mask 9 are at the same distance from the center line a-a' of the film 5, but the opening 2
0, the distance between the lower end 22 and the center line a-a' is shorter than the distance between the upper end 21 and the center line a-a' (of course, the opposite may be true). That is, the length of the opening 20 in the width direction of the film 5 is 340 mm, the width from the film center line a-a' to the upper end 21 of the opening is 180 mm, and the width from the lower end 22 is 340 mm.
I set it to 160mm. In other words, the widthwise length of the opening 5 is 340 mm, and the position is 10 mm from the center of the film.
It is shifted to one end. Using this apparatus, iron was sputtered to a thickness of about 0.1 μm as the first layer of thin film material. A thin film was laminated at a location corresponding to 30 in FIG. 3, traveled in the a' direction, and was wound up on the winding roll 8 in FIG. 1. Next, the take-up roll 8 is removed and placed on the delivery roll 4 again so that the surface on which the iron thin film 30 is formed is sputtered. Alloy 0.2μm
It was made with a thickness of At this time, the film is turned upside down compared to when the iron thin film was formed. FIG. 4 shows the position of the sputtered film on the film at this time. The thin iron film 30 laminated in advance runs from the direction a to the direction a'. A second CoNi thin film 70 is laminated on the film 5 through the opening 20. At this time, the distance between the upper end 11 of the film and the upper end 71 of the CoNi film is 20 mm, and no thin film is laminated thereon. Upper end 7 of CoNi film 70
1 and the upper end 31 of the first layer of iron thin film 30 is 20
mm, and only a single layer of CoNi is laminated in this part. The upper end 31 of the first layer iron thin film 30 and the second layer
The distance between the lower ends 72 of the CoNi films 70 of the layers is 320 mm,
The desired two-layer structure part of the electronic material was obtained.
Moreover, a single iron thin film layer having a width of 20 mm was also obtained between the lower end 72 of the second layer CoNi film 70 and the lower end 32 of the first layer iron thin film 30.

A block diagram of a mask according to a second embodiment of the present invention is shown in FIG.

In this embodiment, a case will be described in which a two-layer thin film is created in the same manner as in the first embodiment.

This embodiment is characterized by a mask 19 for the first iron thin film layer and a mask 29 for the second CoNi thin film layer.
were placed in a sputtering tank, facing each of the two evaporation sources. Opening 60 of mask 19
and the opening 61 of the mask 29 are arranged at positions shifted from each other with respect to the center line aa' of the film 5. As a result, the first iron thin film 30 and the second CoNi
The overlapping portion of the thin film 70 is the upper end 31 of the iron thin film 30.
and the lower end 72 of the CoNi thin film 70, and a single iron thin film layer can be obtained between the lower end 72 of the CoNi thin film 70 and the lower end 32 of the iron thin film 30.
A CoNi thin film layer was obtained between the upper end 71 of the CoNi thin film 70 and the upper end 31 of the iron thin film 30. Since two spatuta guns operate simultaneously, two shots can be made in one film run.
A layer film and a monolayer film were obtained respectively.

Although the above embodiments have been described mainly in the case of a sputtering apparatus, the present invention is not limited thereto, and can also be applied to other thin film manufacturing apparatuses such as vacuum evaporation and ion plating.

Effects of the Invention As described above, the present invention includes a cylindrical can around which a film medium is wound within a vacuum chamber, and at least one evaporation source provided opposite to the can.
A mask having an opening is installed between the can and the evaporation source, and the relative position of the opening and the film medium is made different when forming each thin film. This method has the advantage that the characteristics of each single thin film can be inspected at any location.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of a thin film manufacturing apparatus for producing continuous thin films, FIG. 2 is a plan view of a conventional mask, and FIG. 3 is a first embodiment of the present invention. A plan view showing a state in which the thin films of are laminated, the fourth
This figure is a plan view showing a state in which a second layer of thin film is further laminated in the first embodiment, and FIG. 5 is a plan view showing the structure of a mask according to another embodiment of the present invention. 1... Rotary pump, 2... Anti-dispersion pump,
3... Vacuum tank, 4... Delivery roll, 5... Film, 6, 6'... Guide roll, 7... Cooling can, 8... Winding roll, 9, 19,
29... Shielding mask, 12... Thin film material source, 1
0, 20, 60, 61...opening part, 30...first
Thin film layer of layer, 70... Second thin film layer.

Claims (1)

[Claims] 1. A cylindrical can for winding a film medium in a vacuum chamber, at least one evaporation source provided opposite to the can, and a mask having an opening provided between the can and the evaporation source. Prepare,
A thin film manufacturing apparatus characterized in that, when forming a plurality of thin films on a film medium through the openings of the mask, the relative position of the mask openings with respect to the film medium is made different at the time of forming each thin film.