JPS6217031B2 - - Google Patents
Info
- Publication number
- JPS6217031B2 JPS6217031B2 JP58109136A JP10913683A JPS6217031B2 JP S6217031 B2 JPS6217031 B2 JP S6217031B2 JP 58109136 A JP58109136 A JP 58109136A JP 10913683 A JP10913683 A JP 10913683A JP S6217031 B2 JPS6217031 B2 JP S6217031B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- sio
- film
- mixture
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
技術分解
この発明は基板上のSiもしくはSiO2の微細パタ
ーンを得ることができるSiもしくはSiO2のエツチ
ング法に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Analysis The present invention relates to a Si or SiO 2 etching method capable of obtaining a fine pattern of Si or SiO 2 on a substrate.
従来技術
従来のSiもしくはSiO2のエツチングはSiO2上
にフオトレジストを塗布し、所要のパターンをフ
オトレジストで形成し、フツ酸と硝酸との混合液
もしくはフツ酸とフツ化アンモニウムとの混合液
でエツチングを行うが、SiもしくはSiO2に対し、
たとえばAZ系フオトレジストのようなポジ型の
フオトレジストは付着力が弱く、エツチング中に
フオトレジストが剥離してしまうという欠点があ
る。Conventional technology In conventional etching of Si or SiO 2 , a photoresist is applied on SiO 2 , a desired pattern is formed with the photoresist, and a mixture of hydrofluoric acid and nitric acid or a mixture of hydrofluoric acid and ammonium fluoride is used. However, for Si or SiO 2 ,
For example, a positive type photoresist such as an AZ-based photoresist has a weak adhesion and has the disadvantage that the photoresist peels off during etching.
この、ポジ型のフオトレジストを使用する場合
は接着助剤を塗布した後、ポジ型のフオトレジス
トを塗布するというように塗布工程が増え、また
厚みも増すため分解能が悪くなるという欠点があ
る。 When using a positive type photoresist, there are disadvantages in that the number of coating steps is increased, such as applying an adhesion aid and then the positive type photoresist, and the thickness also increases, resulting in poor resolution.
そこで、SiもしくはSiO2に対する付着力が優れ
たネガ型のフオトレジストが広く使用されている
が、ポジ型のフオトレジストと比べて分解能が悪
く、またエツチング後のレジスト除去がポジ型の
フオトレジストのようにアセトンなどの有機溶剤
で除去できないという欠点があつた。 Therefore, negative-type photoresists, which have excellent adhesion to Si or SiO 2 , are widely used, but their resolution is lower than that of positive-type photoresists, and the resist removal after etching is more difficult than that of positive-type photoresists. However, it has the disadvantage that it cannot be removed with organic solvents such as acetone.
発明の目的
この発明は上記従来の欠点を除去するためにな
されたもので、ホトリソ工程が容易でかつ微細パ
ターンが形成できるとともに、絶縁基板上に多数
のTFT回路を形成するときに利用できるエツチ
ング方法を提供することを目的とする。Purpose of the Invention The present invention was made in order to eliminate the above-mentioned drawbacks of the conventional etching method, and it provides an etching method that facilitates the photolithography process, allows formation of fine patterns, and can be used when forming a large number of TFT circuits on an insulating substrate. The purpose is to provide
発明の構成
この発明のエツチング方法は、基板上に形成さ
れたSiあるいはSiO2層上にIn2O3とSnO2の混合膜
を形成し、ホトリソエツチング法によりこの
In2O3とSnO3の混合膜を所定のパターンに形成し
た後フツ酸と硝酸の混合液もしくはフツ酸とフツ
化アンモニウムの混合液でSiもしくはSiO2のエツ
チングを行うようにしたものである。Structure of the Invention In the etching method of the present invention, a mixed film of In 2 O 3 and SnO 2 is formed on a Si or SiO 2 layer formed on a substrate, and this is etched by photolithography.
After forming a mixed film of In 2 O 3 and SnO 3 in a predetermined pattern, Si or SiO 2 is etched with a mixed solution of hydrofluoric acid and nitric acid or a mixed solution of hydrofluoric acid and ammonium fluoride. .
実施例
以下、この発明のエツチング方法の実施例につ
いて図面に基づき説明する。第１図ａないし第１
図ｅはそれぞれその一実施例の工程説明図であ
る。まず、第１図ａに示すごとく基板１上に形成
されたSiまたはSiO2膜２上にIn2O3とSnO2の混合
膜（以後ITOと呼ぶ）３を膜厚路500Å〜略3000
Åの厚さに電子ビーム蒸着法またはスパツタ法で
形成し、このITO膜３上に第１図ｂに示すごとく
ポジ型フオトレジストを数1000Å〜略２μｍの膜
厚に塗布し、露光、現像を行つてレジストパター
ン４を形成する。Embodiments Hereinafter, embodiments of the etching method of the present invention will be described based on the drawings. Figure 1 a to 1
Figure e is a process explanatory diagram of one embodiment. First, as shown in FIG. 1a, a mixed film of In 2 O 3 and SnO 2 (hereinafter referred to as ITO) 3 is deposited on a Si or SiO 2 film 2 formed on a substrate 1 with a film thickness of 500 Å to approximately 3000 Å.
A positive photoresist is coated on this ITO film 3 to a thickness of several thousand Å to about 2 μm as shown in FIG. 1b, and exposed and developed. A resist pattern 4 is then formed.
ITO膜３上にはAZ系フオトレジストなどは容
易に塗布できる。塗布法はスピンナ、あるいはロ
ールコータなど一般的に普及した方法でよい。 AZ-based photoresist or the like can be easily applied onto the ITO film 3. The coating method may be a commonly used method such as a spinner or a roll coater.
レジストパターン４が形成できたら、次にITO
膜３をエツチングし、第１図ｃに示すごとくレジ
ストパターン４とITO膜３のパターンを形成す
る。 After resist pattern 4 is formed, next ITO
The film 3 is etched to form a resist pattern 4 and a pattern of the ITO film 3 as shown in FIG. 1c.
このITO膜３のエツチングはFeC３とHC
の混合液をほぼ40℃に加熱して行うとほぼ500
Å／分のエツチング速度でエツチングできる。
ITO膜３は透明であるため、エツチング状態を観
察しながらのエツチングは難しいから、エツチン
グ時間によりエツチングを制御する。HCのみ
のエツチ液ではエツチング速度が速すぎるため時
間によるエツチング制御は難しい。 This ITO film 3 is etched using FeC 3 and HC.
When the mixture is heated to approximately 40°C, approximately 500
Etching can be performed at an etching speed of Å/min.
Since the ITO film 3 is transparent, it is difficult to perform etching while observing the etching state, so the etching is controlled by the etching time. With an etchant containing only HC, the etching speed is too fast, making it difficult to control etching by time.
ITO膜３による所要のパターンを形成したら、
次に第１図ｄに示すごとく、レジストパターン４
を除去し、SiまたはSiO2をエツチングする。ポジ
型フオトレジスト４の除去はネガ型と比べて非常
に容易で専用リムーバを略80℃に加熱して使用す
るとよいが、特にAZ系レジストの場合はアセト
ンで容易に除去できる。 After forming the required pattern with ITO film 3,
Next, as shown in FIG. 1d, the resist pattern 4 is
is removed and Si or SiO 2 is etched. Removal of positive photoresist 4 is much easier than negative photoresist, and it is best to use a special remover heated to about 80° C., but AZ resist in particular can be easily removed with acetone.
Siのエツチング液として、フツ酸と硝酸の混合
液に希釈剤として酢酸を混ぜた溶液を使用すると
Siの結晶方位依存が無視できる。SiO2のエツチン
グ液はフツ酸またはフツ酸とフツ化アンモニウム
水溶液の混合液を用いる。 When using a solution of hydrofluoric acid and nitric acid mixed with acetic acid as a diluent as an etching solution for Si,
The dependence on Si crystal orientation can be ignored. As the SiO 2 etching solution, hydrofluoric acid or a mixture of hydrofluoric acid and ammonium fluoride aqueous solution is used.
ところが、ITO膜３はフツ酸、硝酸、酢酸、フ
ツ化アンモニウム水溶液およびこれらの混合液に
対し反応は起らず、したがつてエツチングされな
い。SiまたはSiO2のエツチングが終ると第１図ｅ
に示すごとく、ITO膜３をHCあるいはHCと
FeC３の混合液でエツチングし、基板１上に所
要のパターンにパターニングされたSiまたはSiO2
膜２が残る。SiおよびSiO2はHC，FeC３お
よびこれらの混合液ではエツチングされない。 However, the ITO film 3 does not react with hydrofluoric acid, nitric acid, acetic acid, ammonium fluoride aqueous solution, or a mixture thereof, and is therefore not etched. When the etching of Si or SiO 2 is completed, Figure 1e
As shown in the figure, ITO film 3 is made of HC or HC.
Si or SiO 2 is etched with a mixture of FeC 3 and patterned into the desired pattern on the substrate 1.
Membrane 2 remains. Si and SiO 2 are not etched by HC, FeC 3 or a mixture thereof.
第１図ｄにおいて、SiまたはSiO2のエツチング
前にレジスト４を除去したが、エツチング後に除
去してもSiまたはSiO2のエツチングには何ら問題
は生じない。 In FIG. 1d, the resist 4 is removed before etching Si or SiO 2 , but even if it is removed after etching, no problem will arise in etching Si or SiO 2 .
なお、ITO膜３はSi膜あるいはSiO2に対し、付
着性はよく、またITO膜３に対し、ポジ型フオト
レジストの付着性はよいので、エツチング中に剥
離するというトラブルは生じない。 It should be noted that the ITO film 3 has good adhesion to the Si film or SiO 2 , and since the positive type photoresist has good adhesion to the ITO film 3, the problem of peeling off during etching does not occur.
以上説明したように、上記実施例では、Siまた
はSiO2のエツチングマスクとしてITO膜３を使用
しているため、ホトリソエツチング工程はポジ型
フオトレジストで行えるため、微細パターンが得
られ、かつレジストの除去が容易であるという利
点がある。 As explained above, in the above example, since the ITO film 3 is used as an etching mask for Si or SiO 2 , the photolithography process can be performed with a positive photoresist, so a fine pattern can be obtained, and the resist It has the advantage of being easy to remove.
また、多層膜の最上膜のSiまたはSiO2膜のエツ
チングを行うとき、下層膜の状態を観察しながら
エツチングを行うとき、下層膜の状態を観察しな
がらエツチングを行いたい場合などITO膜３は透
明であるため、可能であるという利点がある。 In addition, when etching the topmost Si or SiO 2 film of a multilayer film, when etching while observing the condition of the lower layer, or when etching while observing the condition of the lower layer, etc. Since it is transparent, it has the advantage of being possible.
なお、ITO膜３の代りにSnO2またはIn2O3を用
いてもよい。 Note that SnO 2 or In 2 O 3 may be used instead of the ITO film 3.
発明の効果
以上のように、この発明のエツチング方法によ
れば、基板上に形成されたSiまたはSiO2膜上に
In2O3とSnO2の混合膜を形成し、ホトリソエツチ
ング法によりこのIn2O3とSnO2の混合膜を所定の
パターンに形成した後、フツ酸と硝酸の混合液も
しくはフツ酸とフツ化アンモニウムの混合液でSi
もしくはSiO2のエツチングを行うようにしたの
で、ホトリソ工程が容易でかつ微細パターンが形
成できるとともに絶縁基板上に多数のTFT回路
を形成するときに利用できる。Effects of the Invention As described above, according to the etching method of the present invention, etching can be performed on a Si or SiO 2 film formed on a substrate.
A mixed film of In 2 O 3 and SnO 2 is formed, and after forming this mixed film of In 2 O 3 and SnO 2 into a predetermined pattern using a photolithography method, a mixed solution of hydrofluoric acid and nitric acid or a mixture of hydrofluoric acid and Si with a mixture of ammonium fluoride
Alternatively, since SiO 2 is etched, the photolithography process is easy and fine patterns can be formed, and it can be used when forming a large number of TFT circuits on an insulating substrate.
第１図ａないし第１図ｅはそれぞれこの発明の
エツチング方法の一実施例の工程説明図である。
１……基板、２……SiまたはSiO2膜、３……
ITO膜、４……レジストパターン。
FIGS. 1a to 1e are process explanatory diagrams of one embodiment of the etching method of the present invention, respectively. 1...Substrate, 2...Si or SiO 2 film, 3...
ITO film, 4...resist pattern.
Claims (1)
In2O3とSnO2の混合膜を形成し、ホトリソエツチ
ング法によりこのIn2O3とSnO2の混合膜を所要の
パターンに形成した後、フツ酸と硝酸の混合液も
しくはフツ酸とフツ化アンモニウムの混合液でSi
もしくはSiO2のエツチングを行うことを特徴と
するエツチング方法。1 On the Si or SiO 2 layer formed on the substrate
After forming a mixed film of In 2 O 3 and SnO 2 into a desired pattern using a photolithography method, a mixed solution of hydrofluoric acid and nitric acid or a mixture of hydrofluoric acid and Si with a mixture of ammonium fluoride
Or an etching method characterized by etching SiO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109136A JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109136A JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS602680A JPS602680A (en) | 1985-01-08 |
| JPS6217031B2 true JPS6217031B2 (en) | 1987-04-15 |
Family
ID=14502496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58109136A Granted JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS602680A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3053576B2 (en) * | 1996-08-07 | 2000-06-19 | オリンパス光学工業株式会社 | Code image data output device and output method |
-
1983
- 1983-06-20 JP JP58109136A patent/JPS602680A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS602680A (en) | 1985-01-08 |
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