JPS6217376B2 - - Google Patents
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- Publication number
- JPS6217376B2 JPS6217376B2 JP57059086A JP5908682A JPS6217376B2 JP S6217376 B2 JPS6217376 B2 JP S6217376B2 JP 57059086 A JP57059086 A JP 57059086A JP 5908682 A JP5908682 A JP 5908682A JP S6217376 B2 JPS6217376 B2 JP S6217376B2
- Authority
- JP
- Japan
- Prior art keywords
- test
- chips
- parallel
- wafer
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明は試験方法に係り、特に試験時間の長い
半導体集積回路を複数個同時に並列試験する方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a testing method, and particularly to a method for simultaneously testing a plurality of semiconductor integrated circuits in parallel, which requires a long testing time.
近年、特に試験時間の長い半導体集積回路(以
下ICと呼称)の一測定手段として、検査装置
(以下テスタと呼称)に複数台のウエーハープロ
ーバーや自動ハンドリング装置を接続して複数個
のICを並列に試験して、その処理量を向上させ
る並列試験方式がとられているが、その効果は、
検査歩留りに大きく左右される為、必ずしも常時
上がつている訳ではない。然し近年のICの集積
度は年々向上する一方で、これに比例するか、も
しくはそれ以上の勾配で試験時間が長くなり、
ICのトータルコストに対する試験コストの割合
は増大する一方であり、テスタを含めた検査シス
テムの処理能力の向上が切に望まれている。この
手段として複数個のICを同時に並列試験する方
法は必要不可決である。 In recent years, as a means of measuring semiconductor integrated circuits (hereinafter referred to as ICs), which require particularly long test times, multiple wafer probers or automatic handling equipment are connected to inspection equipment (hereinafter referred to as testers) to test multiple ICs. Parallel testing methods are used to run tests in parallel and improve the throughput, but the effect is
Since it is greatly affected by the inspection yield, it does not necessarily mean that it is constantly increasing. However, in recent years, while the degree of integration of ICs has improved year by year, test times have become longer in proportion to or at an even greater rate.
The ratio of testing costs to the total cost of ICs continues to increase, and there is a strong desire to improve the throughput of testing systems, including testers. As a means of achieving this, it is not necessary to test multiple ICs in parallel at the same time.
並列試験方法に於いては、同時に測定した複数
個の被測定IC(以下DUTと呼称)が互いに良品
である場合にその効果が最もよく現われ、逆に、
良品と試験時間の短い時点で不良となる不良品と
の組み合わせが多い程にその効果は落ちる。とこ
ろが従来の並列試験方法では、複数個のDUTは
無作為に組み合つている為、良品なるDUT同志
が組み合わさるか否かは不明で、その効果は必ず
しも最大限に発揮されている訳ではなかつた。 The parallel test method is most effective when multiple ICs under test (hereinafter referred to as DUTs) measured at the same time are of good quality.
The greater the number of combinations of non-defective products and defective products that become defective in a short test time, the less effective the test will be. However, in the conventional parallel testing method, multiple DUTs are randomly combined, so it is unclear whether good DUTs will be combined or not, and the effectiveness is not always maximized. Ta.
本発明は以上のような問題点を解決した効率の
よい並列試験方法の提供にある。 The present invention aims to provide an efficient parallel testing method that solves the above-mentioned problems.
本発明の試験方法によれば複数個の被測定IC
を並列に予備試験する第1の試験手段と、該試験
結果で暫定的に「良」と判定された前記被測定
ICに対しては続く試験を一時的に中断させ、
「否」と判定された前記被測定ICに対してのみこ
の時点で試験を終了させ、該測定部側のみ引き続
き前記同様の予備試験を暫定的な「良」判定の被
測定ICが得られるまで順次被測定ICを替えなが
ら試験させる第2の試験手段と、前記第1及び第
2の試験手段から得られた前記暫定的な「良」判
定された複数個の再度並列に前記予備試験後に本
試験を実行させて、最終的な良、否判定を得る第
3の試験手段とから成ることを特徴とする試験方
法である。 According to the test method of the present invention, a plurality of ICs under test
a first test means for performing a preliminary test in parallel; and a first test means for conducting a preliminary test in parallel;
For ICs, continuing tests will be temporarily suspended,
At this point, the test is completed only for the IC under test that has been judged as "fail", and the measurement section continues to perform the same preliminary test as above until the IC under test is tentatively judged as "good". a second test means for testing the ICs under test while changing them sequentially; and a second test means for testing the ICs under test while sequentially changing them, and testing the plurality of ICs that have been provisionally determined to be "good" obtained from the first and second test means again in parallel after the preliminary test. This test method is characterized by comprising a third test means for executing the test and obtaining a final pass/fail judgment.
以下、本発明による並列試験方法を図面を参照
しながら詳細に説明する。第1図は2枚の半導体
ウエーハーの良、否チツプを示すウエーハーマツ
プで〇印が良品チツプ、×印が不良品チツプであ
ることを示す。尚説明の便宜上、×印の不良品チ
ツプは本発明による並列試験方法の第1の試験手
段(予備試験)で発見されるものとする。又、第
2図は前記第1図のような2枚のウエーハーを従
来の並列試験方法で試験した場合の試験順序を時
間的検知からみた場合のタイミングチヤート、第
3図は同様に前記第1図のウエーハーを本発明に
よる並列試験方法で試験した場合のタイミングチ
ヤートである。 Hereinafter, the parallel testing method according to the present invention will be explained in detail with reference to the drawings. FIG. 1 is a wafer map showing the good and bad chips of two semiconductor wafers, with ○ marks indicating good chips and x marks indicating defective chips. For convenience of explanation, it is assumed that the defective chips marked with an "X" are found by the first test means (preliminary test) of the parallel test method according to the present invention. Furthermore, FIG. 2 is a timing chart of the test order seen from time detection when two wafers as shown in FIG. 1 are tested using the conventional parallel testing method, and FIG. This is a timing chart when the wafer shown in the figure is tested using the parallel testing method according to the present invention.
前記第1図のような2枚のウエーハー1a及び
1b上のチツプ2a及び2bを同時に並列試験す
る場合、従来の方法ではウエーハー1aの第1チ
ツプとウエーハー1bの第1チツプ、ウエーハー
1aの第2チツプとウエーハー1bの第2チツプ
ウエーハー1aの第3チツプとウエーハー1bの
第3チツプ、ウエーハー1aの第16チツプとウエ
ーハー1bの第16チツプという具合に、ウエーハ
ー1aとウエーハー1b間でペアーとなるチツプ
は一定しており、互いに良なるチツプが組み合う
か否かは偶然に頼つていた。 When chips 2a and 2b on two wafers 1a and 1b are simultaneously tested in parallel as shown in FIG. The chips that form a pair between the wafer 1a and the wafer 1b are the chip and the second chip of the wafer 1b, the third chip of the wafer 1a and the third chip of the wafer 1b, the 16th chip of the wafer 1a and the 16th chip of the wafer 1b. It was constant, and it depended on chance whether good chips would work together or not.
したがつて前記第1図に示すような良、否チツ
プを有するウエーハーを従来方法で並列試験した
時には、第2図に示すように互いのウエーハーの
第6チツプを試験する場合には両チツプ共、良チ
ツプであるため、並列測定の効果は現われるが、
例えば互いのウエーハーの第2チツプ、第7チツ
プ、第8チツプでは良品チツプと不良品チツプが
組み合い、不良品チツプに要する測定時間が良品
チツプの測定時間に含まれる為、その効果は不良
品チツプに要する試験時間分のみ短縮されるが、
特にウエーハーテストに於ける不良はシヨート障
害テスト、直流パラメトリツクテスト、及び基本
フアンクシヨンテスト等に代表されるように、ト
ータルのテスト時間に比べて比較的短時間で済む
試験で発見される割合が高い為、前述のように良
品チツプと不良品チツプの組み合わせに於いては
並列試験の効果はほとんど期待できない。 Therefore, when wafers having good and bad chips as shown in FIG. 1 are tested in parallel using the conventional method, when testing the sixth chip of each wafer as shown in FIG. , since it is a good chip, the effect of parallel measurement appears, but
For example, in the second, seventh, and eighth chips of each wafer, good chips and defective chips are combined, and the measurement time required for the defective chips is included in the measurement time for the good chips. This will reduce the time required for the exam, but
In particular, defects in wafer testing are discovered through tests that take a relatively short time compared to the total test time, such as short failure tests, DC parametric tests, and basic function tests. Since the ratio is high, as mentioned above, the effect of parallel testing on combinations of good chips and defective chips can hardly be expected.
従つて本発明は以上説明したような不具合に特
に注目し、作為的に良品と思われるチツプを組み
合わせるようにしたものである。 Therefore, the present invention pays special attention to the above-described problems and intentionally combines chips that are considered to be of good quality.
本発明の並列試験方法では被測定ICの試験内
容を予備試験と本試験という具合に2つに分離し
予備試験としては前述したようなシヨート障害テ
スト、直流パラメトリツクテスト、基本フアンク
シヨンテスト、のような基本的なテスト項目及び
その他のAC試験やマージン予裕度試験で不良に
なる場合を相定した比較的不良検出率の高い試験
項目で構成し、かつこれらはトータルテスト時間
に比べて短時間な試験とする。試験の実行手順と
しては始めにウエーハー1aの第1チツプとウエ
ーハー1bの第1チツプを並列に前記予備試験を
実行し、その結果、両チツプ共「良」判定の場合
には引き続き本試験を並列に実行するが前記予備
試験結果が「良」と「否」に分かれた時には
「良」側のチツプに対しては一時的に試験を中断
して「否」のチツプのみこの時点で試験を終了さ
せ試験の対象チツプを次に移して再度予備試験を
実行させる。第1図に示すようなウエーハーの場
合にはウエーハー1a,1bの第1チツプを並列
に予備試験するが両チツプとも「不良」の為、互
いに次の第2チツプで並列に予備試験する。ここ
ではウエーハー1aは「不良」で、ウエーハー1
bは「良」である為、ウエーハー1bの第2チツ
プはここで一時的に試験を中断し、ウエーハー1
a試験チツプを第3チツプに移し、このチツプの
み単独で予備試験し該チツプも「不良」のためさ
らに第4チツプを予備試験、以後順にウエーハー
1aで予備試験で「良」なるチツプが存在するま
で実行する。第6チツプが予備試験で「良」とな
つたら、先に中断していたウエーハー1bの第2
チツプと前記ウエーハー1aの第6チツプを並列
に本試験を実行させ、これらの両チツプに対して
は本試験の結果が最終判定結果となる。以下両ウ
エーハーとも互いにチツプを次に移し又予備試験
から前述した方法で試験を実行させる。 In the parallel test method of the present invention, the test content of the IC under test is divided into two parts, such as a preliminary test and a main test. It consists of basic test items such as , and other test items that have a relatively high failure detection rate to account for failures in AC tests and margin margin tests, and these test items are short compared to the total test time. The test will be short. The test execution procedure is to first perform the preliminary test on the first chip of wafer 1a and the first chip of wafer 1b in parallel, and if both chips are judged to be "good" as a result, then continue the main test in parallel. However, when the preliminary test results are divided into "pass" and "fail", the test is temporarily interrupted for the chips on the "pass" side, and the test ends at this point only for the chips that are "fail". Then move the target chip to the next one and run the preliminary test again. In the case of wafers as shown in FIG. 1, the first chips of wafers 1a and 1b are pretested in parallel, but since both chips are "defective", the next second chip is pretested in parallel. Here, wafer 1a is "defective" and wafer 1
Since chip b is "good", the test for the second chip of wafer 1b is temporarily interrupted, and the test for the second chip of wafer 1b is
Transfer the test chip a to the third chip, perform a preliminary test on this chip alone, and since that chip is also "defective", perform a preliminary test on the fourth chip, and then sequentially use wafer 1a to perform a preliminary test. Execute until. If the 6th chip passes the preliminary test, the 2nd chip of wafer 1b, which was previously suspended,
The main test is performed on the chip and the sixth chip of the wafer 1a in parallel, and the result of the main test becomes the final judgment result for both chips. Thereafter, the chips of both wafers are transferred to the next one and tests are carried out in the manner described above from the preliminary test.
以上の実行順序をタイミングチヤートで示した
が第3図である。第2図に示す従来の並列試験方
法でもタイミングチヤートと第3図のタイミング
チヤート比較してわかるように本発明の並列試験
方法では、少くとも、良品チツプ数の少ない側の
ウエーハーの良品チツプは必ずもう一方のウエー
ハーの良品チツプと組み合つて試験する為並列試
験の効果は従来方法に比べて明らかに向上してお
り、この度合は予備試験の時間が短かい程その効
果は大きい。 The above execution order is shown in a timing chart in FIG. 3. As can be seen by comparing the timing chart of the conventional parallel test method shown in FIG. 2 with the timing chart of FIG. The effect of parallel testing is clearly improved compared to the conventional method because the test is performed in combination with good chips from the other wafer, and the shorter the preliminary test time, the greater the effect.
第1図はウエーハーマツプ、第2図は従来の並
列試験方法によるチツプの実行順序を時間的検知
からみた場合のタイミングチヤート、第3図は本
発明による並列試験方法の第2図同様のタイミン
グチヤートである。
なお図において、1a,1b……ウエーハー、
2a,2b……被測定チツプ、である。
Fig. 1 is a wafer map, Fig. 2 is a timing chart of the chip execution order seen from time detection using the conventional parallel testing method, and Fig. 3 is a timing chart similar to Fig. 2 of the parallel testing method according to the present invention. be. In the figure, 1a, 1b...wafer,
2a, 2b... chips to be measured.
Claims (1)
ウエーハーを並列に試験する方法に於いて、第1
の試験で複数個の前記半導体ウエハーを並列に試
験し、該第1の試験で「良」と判定されたチツプ
に対しては続く第2の試験を一時的に中断し、
「否」と判定された半導体ウエハーに対してのみ
引続き前記第1の試験を「良」と判定されるチツ
プが得られるまで行ない、すべての半導体ウエハ
ーにおいて「良」と判定されたチツプがそろつた
時、それらの被試験素子に対して続く第2の試験
を行ない、前記第1の試験として比較的不良検出
率の高い試験項目であつて短時間で結果が得られ
る試験を行ない、前記第2の試験としてその他の
本試験を行なうことを特徴とする試験方法。1. In a method for testing multiple semiconductor wafers in parallel, each having multiple chips,
A plurality of semiconductor wafers are tested in parallel in the test, and the subsequent second test is temporarily interrupted for chips that are determined to be "good" in the first test,
The first test was continued only for the semiconductor wafers that were determined to be "fail" until chips that were determined to be "good" were obtained, and all semiconductor wafers had chips that were determined to be "good". At the same time, a second test is performed on those devices under test, and the first test is a test that has a relatively high defect detection rate and results can be obtained in a short time. A test method characterized by conducting another main test as a test for.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059086A JPS58176944A (en) | 1982-04-09 | 1982-04-09 | Testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059086A JPS58176944A (en) | 1982-04-09 | 1982-04-09 | Testing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176944A JPS58176944A (en) | 1983-10-17 |
| JPS6217376B2 true JPS6217376B2 (en) | 1987-04-17 |
Family
ID=13103174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57059086A Granted JPS58176944A (en) | 1982-04-09 | 1982-04-09 | Testing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176944A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487659A (en) * | 1990-07-27 | 1992-03-19 | Mochizuki Kiko Seisakusho:Kk | Method and device for coating long-sized thin veneer sheet |
| JPH0487660A (en) * | 1990-07-27 | 1992-03-19 | Mochizuki Kiko Seisakusho:Kk | Method and device for coating long-sized sheet-like elastic body |
| CN100430925C (en) * | 2005-06-30 | 2008-11-05 | 东北大学 | A management system and device based on embedded operation |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010743A (en) * | 1983-06-30 | 1985-01-19 | Nec Home Electronics Ltd | Measurement of characteristics of semiconductor element |
| JPS60254626A (en) * | 1984-05-30 | 1985-12-16 | Sharp Corp | Wafer testing method |
-
1982
- 1982-04-09 JP JP57059086A patent/JPS58176944A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487659A (en) * | 1990-07-27 | 1992-03-19 | Mochizuki Kiko Seisakusho:Kk | Method and device for coating long-sized thin veneer sheet |
| JPH0487660A (en) * | 1990-07-27 | 1992-03-19 | Mochizuki Kiko Seisakusho:Kk | Method and device for coating long-sized sheet-like elastic body |
| CN100430925C (en) * | 2005-06-30 | 2008-11-05 | 东北大学 | A management system and device based on embedded operation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58176944A (en) | 1983-10-17 |
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