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JPS6217745B2 - - Google Patents
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JPS6217745B2 - - Google Patents

Info

Publication number
JPS6217745B2
JPS6217745B2 JP55003281A JP328180A JPS6217745B2 JP S6217745 B2 JPS6217745 B2 JP S6217745B2 JP 55003281 A JP55003281 A JP 55003281A JP 328180 A JP328180 A JP 328180A JP S6217745 B2 JPS6217745 B2 JP S6217745B2
Authority
JP
Japan
Prior art keywords
mask
pattern
image
inspected
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55003281A
Other languages
Japanese (ja)
Other versions
JPS56100416A (en
Inventor
Kenichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP328180A priority Critical patent/JPS56100416A/en
Publication of JPS56100416A publication Critical patent/JPS56100416A/en
Publication of JPS6217745B2 publication Critical patent/JPS6217745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Description

【発明の詳細な説明】 本発明はマスク修正方法及び該マスク修正方法
に用いる装置にかかり、特に自動的にマスク検査
及び修正を行う方法とその機能を備えた装置に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a mask repair method and an apparatus used in the mask repair method, and more particularly to a method for automatically inspecting and repairing a mask, and an apparatus equipped with the function.

半導体基板或はマスク基板上に多数の同一パタ
ーンを形成せしめる際に使用するレチクルは、パ
ターン・ジエネレータを用いて乾板上にマスク・
パターンを描画して形成せしめる。然して描画に
際しては通常感度が高く高速描画に適するエマル
ジヨン乾板が使用されるが、エマルジヨン層は硬
度が低くパターンが損傷し易いので、該エマルジ
ヨン乾板からなるレチクルは直かにフオトマスク
の製造或は半導体装置の製造に使用するには適し
ない。そこで実際の上記製造工程にはエマルジヨ
ン・マスクからなるレチクルを原板として転写せ
しめたハード・マスクからなるレチクルが使用さ
れる。然して該ハード・マスクからなるレチクル
に異常がある場合には、フオトマスク或は半導体
装置の製造歩留りを著しく損なうので、転写形成
せしめたハード・マスクからなるレチクルのマス
ク・パターンはエマルジヨン・マスクからなるレ
チクル原板のマスク・パターンと対比して検査を
行い、異常部分の修正がなされる。
A reticle used when forming a large number of identical patterns on a semiconductor substrate or a mask substrate uses a pattern generator to create a mask on a dry plate.
Draw and form a pattern. However, when writing, an emulsion dry plate is usually used, which has high sensitivity and is suitable for high-speed writing. However, since the emulsion layer has low hardness and the pattern is easily damaged, reticles made from the emulsion dry plate are used directly in the production of photomasks or semiconductor devices. Not suitable for use in manufacturing. Therefore, in the actual manufacturing process described above, a reticle made of a hard mask is used, which is transferred from a reticle made of an emulsion mask as an original plate. However, if there is an abnormality in the reticle made of the hard mask, the manufacturing yield of photomasks or semiconductor devices will be significantly impaired. Inspection is performed by comparing it with the mask pattern on the original plate, and abnormal areas are corrected.

然して従来上記修正に当つては、エマルジヨ
ン・マスクからなるレチクル原板のパターンとハ
ード・マスクからなるレチクルのパターンを光学
的に重ね合わせ、顕微鏡等による目視検査を行つ
て、異常項目別の異常部位のマツプ(地図)を作
成し、該マツプに基づいて別途レーザ焼去或はス
ポツト露光を行つて異常パターンを修正する方法
が用いられており、従つて修正工程が煩雑なため
に工数や手番が多くかかると同時に修正ミスが発
生するという問題があつた。
Conventionally, however, in the above-mentioned correction, the pattern of the original reticle consisting of an emulsion mask and the pattern of the reticle consisting of a hard mask are optically superimposed, and a visual inspection is performed using a microscope, etc., to identify the abnormal area for each abnormality item. The method used is to create a map and perform separate laser burning or spot exposure based on the map to correct abnormal patterns.The correction process is complicated and requires a lot of man-hours and steps. There was a problem that it took a lot of time and at the same time correction errors occurred.

本発明は上記問導点に鑑み、パターンの検査及
び修正が総て自動的になされ、従つて修正ミスの
発生も防止できるマスク修正方法と該自動修正の
機能を有するマスク修正装置を提供する。
In view of the above-mentioned problems, the present invention provides a mask repair method in which pattern inspection and correction are all automatically performed, thereby preventing the occurrence of correction errors, and a mask repair apparatus having the automatic correction function.

即ち、本発明は標準マスクパターンとフオト・
レジスト層を塗着せしめた被検査マスクパターン
の何れか一方を赤色光で他の一方を緑色光で投影
し、両投影パターンを重ね合わせて同一スクリー
ン上に結像せしめ、該重ね合わせパターン像上を
光電変換カメラで走査して、重ね合わせパターン
像の色調の変化を電気信号で捕らえ、該電気信号
のレベルにより異常パターンの位置及び異常パタ
ーンの種類を判断し、該判断に基づいてレーザ焼
去或はスポツト露光の何れかによる異常パターン
の修正を自動的に行うことを特徴とするマスク修
正方法及び標準マスクと被検査マスクがセツトさ
れるサーボモータ駆動のXYステージと標準マス
クと被検査マスクを別々に投影する赤色光源及び
緑色光源と、前記赤色光による投影像と緑色光に
よる投影像を重ね合わせて同一スクリーンに結像
せしめる光学系と、前記重ね合わせ像上を走査す
る光電変換カメラと、該光電変換カメラの電気信
号レベルを類別する比較識別装置と、該比較識別
装置から与えられる信号により駆動するレーザ焼
去系及びスポツト露光系を有し、自動的に修正を
行う機能を有してなることを特徴とするマスク修
正装置に関するものである。
That is, the present invention combines standard mask patterns and photo
One of the mask patterns to be inspected coated with a resist layer is projected with red light and the other with green light, and both projected patterns are superimposed and imaged on the same screen, and the superimposed pattern image is is scanned with a photoelectric conversion camera to capture the change in color tone of the superimposed pattern image as an electrical signal, the position and type of the abnormal pattern are determined based on the level of the electrical signal, and laser burning is performed based on the determination. Alternatively, a mask repair method characterized by automatically correcting abnormal patterns by either spot exposure, a servo motor-driven XY stage on which a standard mask and a mask to be inspected are set, and a standard mask and a mask to be inspected. A red light source and a green light source that project separately, an optical system that superimposes the projected image of the red light and the projected image of the green light and form them on the same screen, and a photoelectric conversion camera that scans the superimposed image. It has a comparison and identification device for classifying the electric signal level of the photoelectric conversion camera, and a laser burning system and a spot exposure system that are driven by the signals given from the comparison and identification device, and has a function of automatically making corrections. The present invention relates to a mask correction device characterized by:

以下本発明を第1図に示す一実施例の装置構造
説明図、第2図に示す重ね合わせパターン模式図
及び第3図に示す同実施例における制御系構成図
を用いて詳細に説明する。
The present invention will be described in detail below with reference to an explanatory diagram of an apparatus structure of an embodiment shown in FIG. 1, a schematic diagram of an overlapping pattern shown in FIG. 2, and a configuration diagram of a control system in the same embodiment shown in FIG.

例えば本発明のマスク修正方法に用いる装置は
第1図に示すように、標準マスク1とフオトレジ
スト層を被着せしめた被検査マスク2を透光窓
(図示せず)上に載置固定せしめた矢印X及びY
の方向に移動可動なXYステージ3を有し、該ス
テージ下部にマスク投影用の白色光源4及び標準
マスクを投影する例えば赤色光を形成せしめる赤
色フイルタ5、被検査マスクを投影する緑色光を
形成せしめる緑色フイルタ6と更にこれらの光を
標準マスク1と被検査マスク2に各々垂直に照射
せしめるミラー7及び7′を有しており、また被
検査マスク側のミラー7′にはレーザビームの通
過窓8が形成されている。
For example, as shown in FIG. 1, the apparatus used in the mask repair method of the present invention places and fixes a standard mask 1 and a mask to be inspected 2 coated with a photoresist layer on a transparent window (not shown). arrows X and Y
It has an XY stage 3 movable in the direction of , and below the stage is a white light source 4 for mask projection, a red filter 5 for forming, for example, red light for projecting the standard mask, and a green light for projecting the mask to be inspected. A green filter 6 is provided to allow the laser beam to pass, and mirrors 7 and 7' are provided to vertically irradiate these lights onto the standard mask 1 and the mask to be inspected 2, respectively. A window 8 is formed.

そしてミラー7を介して標準マスク1を垂直に
透過した赤色投影光9はハーフミラー11で反射
され、標準マスク像がスクリーン12に結像さ
れ、またミラー7′を介して被検査マスク2を垂
直に透過した緑色投影光10はハーフミラー1
1′で反射され、更にハーフミラー11を透過し
て被検査マスク像をスクリーン12上に前記標準
マスク像と重ね合わせて結像せしめる光学系及び
該重ね合わせ像上を走査する光電変換カメラ13
を有する検査機能部を有している。
The red projection light 9 vertically transmitted through the standard mask 1 via the mirror 7 is reflected by the half mirror 11, and a standard mask image is formed on the screen 12. The green projected light 10 transmitted through the half mirror 1
1', and further transmits through the half mirror 11 to form an image of the mask to be inspected on the screen 12, superimposed on the standard mask image, and a photoelectric conversion camera 13 that scans the superimposed image.
It has an inspection function section with

そして上記光学系によりスクリーン12上に投
影された重ね合わせ像は例えば遮光膜に三角形の
透光パターンを有する標準マスクと、同一パター
ンを有する被検査マスクを重ね合わせた状態で第
2図に示すように遮光膜を有する領域においては
標準マスクを照射する赤色光も被検査マスクを照
射する緑色光も透過されないので、黒色パターン
14となり、三角形の透光パターンは標準マスク
に照射される赤色光も被検査マスクに照射される
緑色光も共に透過するのでこれらの色が重ね合わ
されて黄色パターン15となる。
The superimposed image projected onto the screen 12 by the optical system is, for example, a standard mask having a triangular light-transmitting pattern on the light-shielding film and a mask to be inspected having the same pattern, as shown in FIG. In the area where the light-shielding film is provided, neither the red light irradiating the standard mask nor the green light irradiating the mask to be inspected is transmitted, resulting in a black pattern 14, and the triangular light-transmitting pattern is protected from the red light irradiating the standard mask. Since the green light irradiated onto the inspection mask is also transmitted, these colors are superimposed to form the yellow pattern 15.

然し若しも被検査マスクの遮光膜にピンホール
が存在する場合は、該ピンホール部は緑色光を通
過するのでスクリーン上には緑色のピンホールパ
ターン16が投影され、また被検査マスクの三角
形の透光パターン内に遮光膜残渣が存在する場合
には、該遮光膜残渣部において緑色光が遮断され
るのでスクリーン上には赤色の遮光膜残渣パター
ン17が投影される。そしてこれら光調の変化に
より光電変換カメラで変換される電圧レベルが異
なり、例えば黄色においては約0.5〔V〕、緑色に
おいては約0.3〔V〕、赤色においては約0.2
〔V〕黒色においては殆んど0〔V〕となる。
However, if there is a pinhole in the light-shielding film of the mask to be inspected, green light will pass through the pinhole, so a green pinhole pattern 16 will be projected onto the screen, and the triangular shape of the mask to be inspected will be projected onto the screen. If there is a light-shielding film residue in the light-transmitting pattern, green light is blocked in the light-shielding film residue, so a red light-shielding film residue pattern 17 is projected onto the screen. The voltage level converted by the photoelectric conversion camera varies depending on these changes in light intensity, for example, about 0.5 [V] for yellow, about 0.3 [V] for green, and about 0.2 for red.
[V] In black, it is almost 0 [V].

そこで、本発明の装置においては再び第1図に
示すように上記検査機能部の他に前記光電変換カ
メラの電圧レベルによつて動作するスポツト露光
系18及びレーザ焼去系19からなる修正機能部
を併設せしめ自動的にマスク修正がなされるよう
に構成せしめている。そしてスポツト露光系18
は例えば紫外光源20、紫外光スポツトの大きさ
を決めるスリツト21、スポツト露光位置を変位
せしめるプリズムミラー23及び23′及びシヤ
ツタ24からなつており、またレーザ焼去系19
は例えばヤグレーザ25、レーザビーム照射位置
を変位せしめるミラー26及び26′及びシヤツ
タ27とからなつている。
Therefore, in the apparatus of the present invention, as shown in FIG. 1 again, in addition to the above-mentioned inspection function section, there is a correction function section consisting of a spot exposure system 18 and a laser burning system 19, which operate according to the voltage level of the photoelectric conversion camera. The system is configured so that mask correction is automatically performed. And spot exposure system 18
For example, it consists of an ultraviolet light source 20, a slit 21 that determines the size of the ultraviolet light spot, prism mirrors 23 and 23' that displace the spot exposure position, and a shutter 24, and a laser burning system 19.
For example, it is made up of a YAG laser 25, mirrors 26 and 26' for displacing the laser beam irradiation position, and a shutter 27.

そして上記本発明の装置の制御系は第3図に示
すように光電変換カメラ13の影像回路系28と
それに続く増幅回路29と、それに続く微分回路
30と、それに続く比較回路31と、それに続く
タイプ識別論理回路32(前記比較回路31と該
タイプ識別論理回路32を合わせて比較識別装置
33と呼ぶ)と、該比較識別装置33の第1の出
力線に接続するステージ制御回路34と、比較識
別装置33の第2の出力線に接続するスポツト露
光制御回路35と、比較識別装置33の第3の出
力線に接続するレーザ制御回路36を有してお
り、上記ステージ制御回路34とスポツト露光制
御回路35及びレーザ制御回路36は別に前記光
電変換カメラ信号の増幅回路29に接続する位置
判定回路37に接続されており、また該位置判定
回路には前記比較識別装置33の第4の出力線が
接続されてなつている。そして該制御系の出力側
はステージ制御回路34からステージ駆動装置3
8へスポツト露光制御回路35からプリズムミラ
ー駆動装置39、スリツト駆動装置40及び露光
用シヤツタ駆動装置41へ、またレーザ制御回路
36からミラー駆動装置42及びレーザー用シヤ
ツタ駆動装置43へそれぞれ接続される。
As shown in FIG. 3, the control system of the apparatus of the present invention includes an image circuit system 28 of the photoelectric conversion camera 13, an amplifier circuit 29 following it, a differentiation circuit 30 following it, a comparison circuit 31 following it, and a comparison circuit 31 following it. a type identification logic circuit 32 (the comparison circuit 31 and the type identification logic circuit 32 are collectively referred to as a comparison identification device 33); a stage control circuit 34 connected to the first output line of the comparison identification device 33; It has a spot exposure control circuit 35 connected to the second output line of the identification device 33, and a laser control circuit 36 connected to the third output line of the comparison identification device 33, and the stage control circuit 34 and the spot exposure The control circuit 35 and the laser control circuit 36 are separately connected to a position determination circuit 37 connected to the photoelectric conversion camera signal amplification circuit 29, and the position determination circuit is connected to the fourth output line of the comparison identification device 33. are connected and connected. The output side of the control system is from the stage control circuit 34 to the stage drive device 3.
8, the spot exposure control circuit 35 is connected to a prism mirror drive device 39, a slit drive device 40, and an exposure shutter drive device 41, and the laser control circuit 36 is connected to a mirror drive device 42 and a laser shutter drive device 43, respectively.

然して上記のような装置を使用しフオトレジス
ト層を被着せしめたマスクの検査を行つた際に前
記スクリーン上の重ね合わせパターン上を光電変
換カメラで走査し緑色パターンを検出した際に
は、該緑色パターンを有する一画面(光電変換カ
メラの一画面を意味し通常2〔mm〕角程度であ
る)の走査が完了した時点で位置判定回路37及
び比較識別装置33からの情報信号によつて第1
図に示すXYステージ3の移動及び露光系18の
プリズム23及び23′変位、スリツト21の移
動及びシヤツタ24の開閉がなされてハーフミラ
ー11′を貫いて被検査マスク2のピンホール部
上のフオトレジスト膜にスポツト露光が行われ
る。また被検査マスクに遮光膜残渣が存在する場
合にはスクリーン12上に投影される赤色パター
ンが光電変換カメラ13により検出され上記同様
位置判定回路(第3図37)及び比較識別装置
(第3図33)からの情報信号によりXYステージ
3の移動及びレーザ焼去系19のヤグレーザ25
の駆動、ミラー26及び26′の変位及びシヤツ
タ27の開閉がなされて投影用のミラー7′のレ
ーザビーム通過窓8を通して被検査マスク2の遮
光膜残渣にレーザビームが照射され遮光膜残渣の
焼去がなされる。
However, when inspecting a mask coated with a photoresist layer using the above-mentioned apparatus, when a photoelectric conversion camera scans the overlapping pattern on the screen and detects a green pattern, the corresponding When the scanning of one screen (meaning one screen of a photoelectric conversion camera, which is usually about 2 mm square) having a green pattern is completed, the information signal from the position determination circuit 37 and comparison identification device 33 1
As shown in the figure, the movement of the XY stage 3, the displacement of the prisms 23 and 23' of the exposure system 18, the movement of the slit 21, and the opening and closing of the shutter 24 are performed to produce a photo on the pinhole portion of the mask 2 to be inspected, passing through the half mirror 11'. Spot exposure is performed on the resist film. In addition, if there is a light-shielding film residue on the mask to be inspected, the red pattern projected on the screen 12 is detected by the photoelectric conversion camera 13, and the same position determination circuit (FIG. 3, 37) and comparison identification device (FIG. 3) are used. 33), the XY stage 3 is moved and the YAG laser 25 of the laser burning system 19 is
is driven, the mirrors 26 and 26' are displaced, and the shutter 27 is opened and closed, and the laser beam is irradiated onto the light-shielding film residue of the mask 2 to be inspected through the laser beam passing window 8 of the projection mirror 7', thereby burning the light-shielding film residue. leaving is done.

上記実施例においては標準マスクの投影を赤色
光で被検査マスクの投影を緑色光で行つたが、両
者の投影光の色を逆にしてもさしつかえない。但
し、この場合、前記と逆にピンホールが赤色に投
影され遮光膜残渣が緑色に投影される。
In the above embodiment, the standard mask was projected with red light and the inspected mask was projected with green light, but the colors of the two projection lights may be reversed. However, in this case, conversely to the above, the pinhole is projected in red and the light shielding film residue is projected in green.

以上説明したように本発明によればフオトマス
クの検査が光電変換カメラにより電気的になさ
れ、該電気的な情報に基づいて修正位置の位置合
わせ及び異常の種類に応じた修正操作が自動的に
なされるので、検査修正の工数及び手番が大幅に
削減できると同時に修正ミスの発生を防止せしめ
ることができ、従つてフオトマスクが半導体装置
の製造留まりの向上及び原価の低減に極めて有効
である。
As explained above, according to the present invention, a photomask is electrically inspected by a photoelectric conversion camera, and based on the electrical information, alignment of the correction position and correction operation according to the type of abnormality are automatically performed. Therefore, the number of man-hours and hands for inspection and correction can be greatly reduced, and at the same time, the occurrence of correction errors can be prevented. Therefore, the photomask is extremely effective in improving the manufacturing yield of semiconductor devices and reducing the cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の装置の構造説明図、第2図は
重ね合わせパターン模式図、第3図は本発明の装
置の制御系構成図である。 図において、1は標準マスク、2は被検査マス
ク、3はXYステージ、4は白色光源、5は赤色
フイルタ、6は緑色フイルタ、7及び7′はミラ
ー、8はレーザビーム通過窓、9は赤色投影光、
10は緑色投影光、11及び11′はハーフミラ
ー、12はスクリーン、13は光電変換カメラ、
14は黒色パターン、15は黄色パターン、16
はピンホールパターン、17は遮光膜残渣パター
ン、18はスポツト露光系、19はレーザ焼去
系、20は紫外光源、21はスリツト、23及び
23′はプリズムミラー、24はシヤツタ、25
はヤグレーザ、26及び26′はミラー、27は
シヤツタ、28は影像回路係、29は増幅回路、
30は微分回路、31は比較回路、32はタイプ
識別論理回路、33は比較識別装置、34はステ
ージ制御回路、35はスポツト露光制御回路、3
6はレーザ制御回路、37は位置判定回路、38
はステージ駆動装置、39はプリズムミラー駆動
装置、40はスリツト駆動装置、41は露光用シ
ヤツタ駆動装置、42はミラー駆動装置、43は
レーザ用シヤツタ駆動装置を示す。
FIG. 1 is a structural explanatory diagram of the apparatus of the present invention, FIG. 2 is a schematic diagram of overlapping patterns, and FIG. 3 is a configuration diagram of the control system of the apparatus of the present invention. In the figure, 1 is a standard mask, 2 is a mask to be inspected, 3 is an XY stage, 4 is a white light source, 5 is a red filter, 6 is a green filter, 7 and 7' are mirrors, 8 is a laser beam passing window, and 9 is a red projection light,
10 is a green projection light, 11 and 11' are half mirrors, 12 is a screen, 13 is a photoelectric conversion camera,
14 is a black pattern, 15 is a yellow pattern, 16
17 is a pinhole pattern, 17 is a light shielding film residue pattern, 18 is a spot exposure system, 19 is a laser burning system, 20 is an ultraviolet light source, 21 is a slit, 23 and 23' are prism mirrors, 24 is a shutter, 25
26 and 26' are mirrors, 27 is a shutter, 28 is an image circuit, 29 is an amplifier circuit,
30 is a differentiation circuit, 31 is a comparison circuit, 32 is a type identification logic circuit, 33 is a comparison identification device, 34 is a stage control circuit, 35 is a spot exposure control circuit, 3
6 is a laser control circuit, 37 is a position determination circuit, 38
39 is a prism mirror drive device, 40 is a slit drive device, 41 is an exposure shutter drive device, 42 is a mirror drive device, and 43 is a laser shutter drive device.

Claims (1)

【特許請求の範囲】 1 標準マスクパターンとフオト・レジスト層を
塗着せしめた被検査マスクパターンの何れか一方
を赤色光で他の一方を緑色光で投影し、両投影パ
ターンを重ね合わせて同一スクリーン上に結像せ
しめ、該重ね合わせパターン像上を光電変換カメ
ラで走査して、重ね合わせパターン像の色調の変
化を電気信号で捕らえ、該電気信号のレベルによ
り異常パターンの位置及び異常パターンの種類を
判断し、該判断に基づいてレーザ焼去或はスポツ
ト露光による異常パターンの修正を自動的に行う
ことを特徴とするマスク修正方法。 2 標準マスクと被検査マスクがセツトされるサ
ーボ・モータ駆動のXYステージと、標準マスク
と被検査マスクを別々に投影する赤色光源及び緑
色光源と、前記赤色光による投影像と緑色光によ
る投影像を重ね合せて同一スクリーンに結像せし
める光学系と、前記重ね合わせ像上を走査する光
電変換カメラと、該光電変換カメラの電気信号レ
ベルを類別する比較識別装置と、該比較識別装置
から与えられる信号により駆動するレーザ焼去系
及びスポツト露光系を有し、自動的に修正を行う
機能を有してなることを特徴とするマスク修正装
置。
[Claims] 1. Either a standard mask pattern or a mask pattern to be inspected coated with a photoresist layer is projected with red light and the other with green light, and both projected patterns are overlapped to form the same image. An image is formed on a screen, and the superimposed pattern image is scanned with a photoelectric conversion camera to capture the change in color tone of the superimposed pattern image as an electrical signal.The position of the abnormal pattern and the abnormal pattern can be determined based on the level of the electrical signal. 1. A mask repair method characterized by determining the type and automatically correcting the abnormal pattern by laser burning or spot exposure based on the determination. 2. A servo-motor-driven XY stage on which the standard mask and the mask to be inspected are set, a red light source and a green light source that project the standard mask and the mask to be inspected separately, and a projected image by the red light and a projected image by the green light. an optical system that superimposes the images on the same screen, a photoelectric conversion camera that scans the superimposed images, a comparison identification device that categorizes the electrical signal level of the photoelectric conversion camera, and a signal provided by the comparison identification device. 1. A mask repairing device comprising a laser burning system and a spot exposure system driven by a signal, and having a function of automatically carrying out correction.
JP328180A 1980-01-16 1980-01-16 Method and device for correcting mask Granted JPS56100416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP328180A JPS56100416A (en) 1980-01-16 1980-01-16 Method and device for correcting mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP328180A JPS56100416A (en) 1980-01-16 1980-01-16 Method and device for correcting mask

Publications (2)

Publication Number Publication Date
JPS56100416A JPS56100416A (en) 1981-08-12
JPS6217745B2 true JPS6217745B2 (en) 1987-04-20

Family

ID=11553027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP328180A Granted JPS56100416A (en) 1980-01-16 1980-01-16 Method and device for correcting mask

Country Status (1)

Country Link
JP (1) JPS56100416A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644144B2 (en) * 1987-03-17 1994-06-08 凸版印刷株式会社 Plate inspection device
JP4574871B2 (en) * 2001-01-25 2010-11-04 日東光学株式会社 Alignment device and assembly device
JP5054949B2 (en) * 2006-09-06 2012-10-24 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081685A (en) * 1973-11-21 1975-07-02
JPS5258373A (en) * 1975-11-07 1977-05-13 Fujitsu Ltd Inspection for defects of pattern forming film

Also Published As

Publication number Publication date
JPS56100416A (en) 1981-08-12

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