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JPS6217751B2 - - Google Patents
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JPS6217751B2 - - Google Patents

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Publication number
JPS6217751B2
JPS6217751B2 JP56105183A JP10518381A JPS6217751B2 JP S6217751 B2 JPS6217751 B2 JP S6217751B2 JP 56105183 A JP56105183 A JP 56105183A JP 10518381 A JP10518381 A JP 10518381A JP S6217751 B2 JPS6217751 B2 JP S6217751B2
Authority
JP
Japan
Prior art keywords
liquid crystal
mim
voltage
pixel
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56105183A
Other languages
Japanese (ja)
Other versions
JPS587178A (en
Inventor
Tomio Sonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56105183A priority Critical patent/JPS587178A/en
Publication of JPS587178A publication Critical patent/JPS587178A/en
Publication of JPS6217751B2 publication Critical patent/JPS6217751B2/ja
Granted legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【発明の詳細な説明】 本発明は金属−絶縁体−金属装置(以下、
MIM装置)の非線型特性に基づくマルチプレク
ス駆動性能の高い液晶表示装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal-insulator-metal device (hereinafter referred to as
This invention relates to a liquid crystal display device with high multiplex drive performance based on the nonlinear characteristics of an MIM device.

近年、ドツトマトリクスに代表される、表示情
報量の大きな液晶パネルが要求されている。この
要求に答えるべく、従来のツイステツドネマチツ
ク液晶パネル(以下、TN液晶パネル)のマルチ
プレクス駆動性能の改良が鋭意なされている。
In recent years, there has been a demand for liquid crystal panels that can display a large amount of information, such as dot matrix. In order to meet this demand, efforts are being made to improve the multiplex drive performance of conventional twisted nematic liquid crystal panels (hereinafter referred to as TN liquid crystal panels).

現在のマルチプレクス駆動は、選択されていな
い画素電極に印加される電圧の変動を防ぐために
電圧平均化法といわれる駆動法が主流となつてい
る。第1図は1/3バイアス法の波形例である。第
1図aは走査線にかかる電圧波形、bはマトリク
ス中の液晶画素1を選択した時の信号線にかかる
電圧波形である。この時、同一信号線上の他の液
晶画素には、V0/3の実効値を持つ電圧が印加
されている。同様に他の信号線にも選択画素に応
じ変化する電圧波形が加えられ、走査線の選択時
2に信号線も選択されていればV0、信号線が選
択されていなければV0/3、信号線の選択、非
選択によらず走査線が選択されていなければ
V0/3の電圧が各液晶画素に実効的に印加され
ている。各液晶画素はこれらの4状態を、1回の
走査時間にマルチプレクス駆動の走査線数個選択
する。ただし走査線は走査時間内に1度しか選択
されないので、各液晶画素は点灯時、V0状態を
1回、残りの走査時間はV0/3状態となり、非
点灯時は全走査時間V0/3状態となる。
In current multiplex driving, a driving method called a voltage averaging method is mainstream in order to prevent fluctuations in the voltage applied to unselected pixel electrodes. Figure 1 shows an example of waveforms for the 1/3 bias method. FIG. 1a shows the voltage waveform applied to the scanning line, and b shows the voltage waveform applied to the signal line when liquid crystal pixel 1 in the matrix is selected. At this time, a voltage having an effective value of V 0 /3 is applied to other liquid crystal pixels on the same signal line. Similarly, a voltage waveform that changes according to the selected pixel is applied to the other signal lines, and when the scanning line is selected, if the signal line is also selected at step 2, it is V 0 , and if no signal line is selected, it is V 0 /3 , if the scanning line is not selected, regardless of whether the signal line is selected or not.
A voltage of V 0 /3 is effectively applied to each liquid crystal pixel. Each liquid crystal pixel selects these four states for several scanning lines of multiplex drive during one scanning time. However, since the scanning line is selected only once within the scanning time, each liquid crystal pixel is in the V 0 state once when it is lit, and is in the V 0 /3 state for the remaining scanning time, and when it is not lit, it is in the V 0 state for the entire scanning time. /3 state.

このようにして非点灯の全画素に印加される実
効電圧は常に一定となる。これを一般化して、デ
ユーテイ比 1/N(Nはマルチプレクス駆動の
走査線数)、V/aバイアス法の場合、点灯画素
と非点灯画素にかかる実効電圧は各々(1)式、(2)式
となる。
In this way, the effective voltage applied to all non-lit pixels is always constant. Generalizing this, in the case of a duty ratio of 1/N (N is the number of scanning lines in multiplex drive) and a V/a bias method, the effective voltage applied to a lit pixel and a non-lit pixel is calculated by formula (1) and (2), respectively. ).

ONとVOFFの比を最大にするのはa=√N+
1の時であり、その時のVON/VOFFは(3)式で表
わされる。
Maximizing the ratio of V ON and V OFF is a=√N+
1, and V ON /V OFF at that time is expressed by equation (3).

(3)式からわかるように、走査線数Nが増加する
と、VON/VOFF比は1に近づく。しかし現状の
TN液晶パネルの電圧−透過率特性から表示品質
が保てるNの限界は数十位である。
As can be seen from equation (3), as the number N of scanning lines increases, the V ON /V OFF ratio approaches 1. However, the current situation
Due to the voltage-transmittance characteristics of a TN liquid crystal panel, the limit of N that can maintain display quality is in the order of tens of tens.

この限界を取り去る方法として、2周波駆動
法、薄膜トランジスタ(TET)マトリクス、
MOSトランジスタマトリクス、そしてMIM装置
等が考案されている。この中で、D.R.Baraffらに
よるMIM装置を用いた液晶表示パネル(SID
International Symposium Digest of Technical
Papers vol.11、p.200、April 1980)は、製造工
程が比較的簡単であり、従来のマルチプレクス駆
動が使用できるといつた利点を有している。この
場合のMIM装置の構成は、Ta薄膜−Ta2O5陽極
酸化膜−Ni・Cr膜からなつている。追試を行な
つたところ、第2図に示すような非線型特性が得
られた。このMIM装置を流れる電流は、(4)式で
与えられる。
As a method to remove this limitation, two-frequency drive method, thin film transistor (TET) matrix,
MOS transistor matrices, MIM devices, etc. have been devised. Among these, a liquid crystal display panel (SID) using an MIM device by DRBaraff et al.
International Symposium Digest of Technical
Papers vol. 11, p. 200, April 1980) has the advantage that the manufacturing process is relatively simple and that a conventional multiplex drive can be used. The configuration of the MIM device in this case consists of a Ta thin film, a Ta 2 O 5 anodic oxide film, and a Ni/Cr film. When additional tests were conducted, nonlinear characteristics as shown in FIG. 2 were obtained. The current flowing through this MIM device is given by equation (4).

d、s:MIM装置の絶縁層の厚さ、および面積 n:キヤリア密度 e:電子電荷 φ:トラツプレベル深さ ε:真空誘電率 μ:電子移動度 κ:ボルツマン定数 T:絶対温度 ε:光学的比誘電率(=n2) O.R.Baraffらの液晶パネルは、第3図に示すよ
うに、片側の基板にMIM装置が付設した構成で
あり、電気回路上は第4図に示すようなMIM装
置と液晶層が直列接続された等価回路となつてい
る。このMIM液晶パネルをマルチプレクス駆動
すると、MIM装置の非線型特性により、液晶層
にかかる実効電圧の比、VON/VOFFが大きく得
られる。この結果、走査線数Nを200程度にして
も液晶のON−OFFが可能となつている。
d, s: Thickness and area of insulating layer of MIM device n: Carrier density e: Electron charge φ: Trap level depth ε 0 : Vacuum permittivity μ: Electron mobility κ: Boltzmann constant T: Absolute temperature ε 1 : Optical dielectric constant (=n 2 ) ORBaraff et al.'s liquid crystal panel has a configuration in which an MIM device is attached to one side of the substrate, as shown in Figure 3, and an MIM device is attached to the electrical circuit as shown in Figure 4. The device and the liquid crystal layer are connected in series to form an equivalent circuit. When this MIM liquid crystal panel is multiplex driven, a large effective voltage ratio V ON /V OFF applied to the liquid crystal layer can be obtained due to the nonlinear characteristics of the MIM device. As a result, it is possible to turn the liquid crystal ON and OFF even when the number of scanning lines N is about 200.

このように情報量の大きな表示が可能となる
MIM液晶パネルではあるが、小さな面積に情報
量を集中させることは極めて難しい。MIM液晶
パネルの特徴は、つまるところMIM装置の非線
形特性による抵抗のスイツチングであり、低抵抗
を通しての液晶層への充電と、液晶層のリークに
よる放電とを巧妙にコントロールしているところ
にある。第5図はMIM特性aと液晶層にかかる
電圧に波形bを示したものである。MIM液晶パ
ネルに印加する電圧波形は簡単のためcの波形と
している。尚1,3はON時の波形、2,4は
OFF時の波形である。これによると液晶層にか
かる電圧は、まず液晶層の容量CLCとMIMによ
る容量CMIMの容量分割された電圧5となり、次
にMIM装置の抵抗と液晶層の抵抗RLCによる抵
抗分割された電圧6を極限値とした電圧変化を行
なう。この時の時定数τは τ=(CLC+CMIM)×RLC・RMIM(VMIM)/RLC+RMIM(VMIM) …(5) VMIM:MIM装置にかかる電圧 で与えられる。
In this way, it is possible to display a large amount of information.
Although it is an MIM LCD panel, it is extremely difficult to concentrate the amount of information in a small area. The main feature of MIM liquid crystal panels is the switching of resistance using the nonlinear characteristics of the MIM device, which cleverly controls charging of the liquid crystal layer through low resistance and discharging due to leakage of the liquid crystal layer. FIG. 5 shows the MIM characteristic a and the waveform b of the voltage applied to the liquid crystal layer. The voltage waveform applied to the MIM liquid crystal panel is the waveform c for simplicity. Note that 1 and 3 are waveforms when ON, and 2 and 4 are waveforms when ON.
This is the waveform when it is OFF. According to this, the voltage applied to the liquid crystal layer is first divided by the capacitance of the liquid crystal layer C LC and MIM by the capacitance C MIM, and then divided by the resistance of the MIM device and the resistance R LC of the liquid crystal layer. The voltage is changed with voltage 6 as the limit value. The time constant τ at this time is given by τ=(C LC +C MIM )×R LC・R MIM (V MIM )/R LC +R MIM (V MIM ) (5) V MIM : voltage applied to the MIM device.

次にMIM液晶に印加される電圧が0になる
と、同様に容量分割された電圧を初期値とし、電
圧0を極限とした電圧変化が生じる。この時の時
定数は同じく(5)式で与えられるが、RLC≪RMIM
となるので、近似的には τ=(CLC+CMIM)RLC ……(6) で表わせる。
Next, when the voltage applied to the MIM liquid crystal becomes 0, the capacitance-divided voltage is similarly set as the initial value, and a voltage change occurs with voltage 0 as the limit. The time constant at this time is also given by equation (5), but R LC ≪ R MIM
Therefore, it can be approximately expressed as τ=(C LC +C MIM )R LC (6).

第6図はCMIMとCLCの比が1:1と1:10の
場合の液晶層にかかる電圧波形を示した図であ
る。これからもわかるように、容量の比を大きく
することによつて電圧が増加する。液晶は実効値
応答をするので簡単には図の面積を考えるとよ
い。
FIG. 6 is a diagram showing voltage waveforms applied to the liquid crystal layer when the ratios of CMIM and CLC are 1:1 and 1:10. As can be seen, increasing the capacitance ratio increases the voltage. Since liquid crystals have an effective value response, it is best to simply consider the area of the diagram.

このようにCMIMとCLCの容量比は液晶にかか
る実効値を大きく変動させる。同時にON−OFF
実効値比も変動し、最適な素子定数のマツチング
状態では容量比が大きい程実効値比がとれる。
In this way, the capacitance ratio between C MIM and C LC greatly changes the effective value applied to the liquid crystal. ON-OFF at the same time
The effective value ratio also fluctuates, and in an optimal matching state of element constants, the larger the capacitance ratio, the higher the effective value ratio.

しかしながら、コンパクトな大情報量表示を目
的とした画素サイズの小さなMIM液晶パネルの
場合、製作上の制約からCMIMの小さなMIM装置
は実現が困難である。例として、絶縁体にTa2O5
を用い、電源電圧20Vで駆動する場合を考える。
液晶は比誘電率が5〜30程度変化するが簡単のた
め10とし、画素面積を1×10-7m2(約0.3mm角)、
ギヤツプを8μmとするとCLCは1.1pFである。
MIMはこれに対し10分の1とすると、Ta2O5
厚さを500Åとすれば、MIM装置の面積は25μm2
となる。画素毎の特性を揃えるためには、この5
μ角のMIM装置を精度よく製作しなければなら
ず、現在のフオトリソグラフイーの技術でも相当
に難しいことがわかる。
However, in the case of a MIM liquid crystal panel with a small pixel size aimed at displaying a large amount of information in a compact manner, it is difficult to realize a small MIM device with a C MIM due to manufacturing constraints. As an example, Ta 2 O 5 in the insulator
Let us consider the case of driving with a power supply voltage of 20V.
The relative dielectric constant of liquid crystal varies from 5 to 30, but for simplicity we set it as 10, and the pixel area is 1 x 10 -7 m 2 (approximately 0.3 mm square).
If the gap is 8 μm, CLC is 1.1 pF.
On the other hand, if C MIM is 1/10th of this, and the thickness of Ta 2 O 5 is 500 Å, the area of the MIM device is 25 μm 2
becomes. In order to equalize the characteristics of each pixel, these 5
A μ-square MIM device must be manufactured with high precision, which is proving to be extremely difficult even with current photolithography technology.

本発明はMIM装置と直列に、かつ液晶層と並
列に接続された補助容量(Cs)を設置し、これ
によりMIM装置の製作を容易にし、画素の特性
が揃つた表示品位の高い液晶表示装置を与えるも
のである。
The present invention installs an auxiliary capacitor (Cs) connected in series with the MIM device and in parallel with the liquid crystal layer, thereby facilitating the production of the MIM device and producing a high-quality liquid crystal display with uniform pixel characteristics. It gives

次に実施例にもとづき本発明を詳説する。 Next, the present invention will be explained in detail based on examples.

第7図は補助容量としてBaTiO3層を液晶層内
に設置した1画素の模式図である。2がBaTiO3
層、3が液晶層である。1のMIM装置はTa及
び、Taの陽極酸化膜で製作されている。BaTiO3
層と液晶層は厚さ10μmであり、BaTiO3層は
BaTiO3の粉体とシリコン樹脂の混合物を幅0.15
mmでスクリーン印刷し、形成した。BaTiO3粉体
の粒径を10μ程度に揃えられればギヤツプの保持
機能も合わせ持たせることができる。これにより
BaTiO3層の容量を含む液晶層の等価容量CLC
は、液晶だけの場合の5〜10倍に増加した。
FIG. 7 is a schematic diagram of one pixel in which three layers of BaTiO are installed in the liquid crystal layer as an auxiliary capacitor. 2 is BaTiO 3
Layer 3 is a liquid crystal layer. The MIM device No. 1 is made of Ta and an anodic oxide film of Ta. BaTiO3
The layer and the liquid crystal layer are 10μm thick, and the three BaTiO layers are
A mixture of BaTiO3 powder and silicone resin with a width of 0.15
Screen printed and formed in mm. If the particle size of BaTiO 3 powder can be adjusted to around 10μ, it can also have a gap retention function. This results in
Equivalent capacitance of the liquid crystal layer including the capacitance of three BaTiO layers C LC
was increased 5 to 10 times that of the case with only liquid crystal.

第8図は、補助容量として粒径約8μmの
BaTiO3粉体をMIM液晶パネルに、ギヤツプ保持
材を兼ね、散布した例である。この場合、散布量
が多量であるのと、均質に散布するのが難点であ
るが、本実施例では均質に散布されている画素の
容量と、ほとんどBaTiO3粉体の見られない画素
の容量比は1:3程度が得られ、散布による容量
の増加がみられた。
Figure 8 shows particles with a particle size of approximately 8 μm as an auxiliary capacity.
This is an example of spraying BaTiO 3 powder onto a MIM liquid crystal panel, which also serves as a gap retaining material. In this case, the problem is that the amount of powder to be sprayed is large and that it is difficult to spray it uniformly, but in this example, the capacity of pixels where BaTiO 3 powder is hardly seen is the same as the capacity of pixels where BaTiO 3 powder is hardly seen. A ratio of about 1:3 was obtained, and an increase in capacity was observed due to spraying.

このようにして製作されたMIM液晶パネル
は、1/5バイアス法、ピーク電圧20V、N=200で
十分なON−OFFが可能となつた。尚、MIM装置
はTa−Ta2O5−Taの構造、10μm角であり、画
素面積は0.1mm2、ギヤツプ10μmである。
The MIM liquid crystal panel manufactured in this way can be turned on and off sufficiently using the 1/5 bias method, peak voltage of 20V, and N=200. The MIM device has a Ta-Ta 2 O 5 -Ta structure, 10 μm square, a pixel area of 0.1 mm 2 , and a gap of 10 μm.

以上説明したように、本発明によれば画素に対
応した等価容量CLCの増加が可能となり、従来の
MIM液晶パネルのMIM装置に比べ装置形状の許
容最小値を大きくできる。このため製作が容易に
なり、MIM装置の特性が均一に揃う。さらに同
一形状のMIM液晶パネルに実施すると、大きな
容量比が簡単に実現され、液晶層とMIM装置の
素子定数のマツチングが容量になるという利点が
ある。
As explained above, according to the present invention, it is possible to increase the equivalent capacitance CLC corresponding to the pixel, which is different from the conventional
Compared to MIM devices with MIM liquid crystal panels, the minimum allowable device shape can be increased. This makes manufacturing easier and ensures that the characteristics of the MIM device are uniform. Furthermore, when applied to MIM liquid crystal panels of the same shape, a large capacitance ratio can be easily achieved, and there is the advantage that matching of the element constants of the liquid crystal layer and the MIM device results in capacitance.

以上の実施例はBaTiO3の大きな比誘電率を利
用したものであるが、本発明はBaTiO3に何ら限
定されるものではなく、液晶の比誘電率より大き
な比誘電率を有する物質ならば応用できることを
示唆している。
Although the above embodiments utilize the large dielectric constant of BaTiO 3 , the present invention is not limited to BaTiO 3 in any way, and can be applied to any material having a dielectric constant larger than that of liquid crystal. It suggests that it is possible.

上述の如く本発明は、一対の基板内に液晶が封
入され該基板の一方の基板上にマトリクス状に複
数の表示電極が形成され、各表示電極には金属−
絶縁体−金属の非線型薄膜素子が形成されてなる
液晶表示装置において、該表示電極と対向する基
板との間の該液晶の比誘電率より大きな比誘電率
を有する物質を介在させたから、該非線型薄膜素
子の容量に比し大きな液晶駆動電極容量を実現す
ることができるために、ON−OFFの実効値比を
大幅に向上することができる効果を有する。
As described above, in the present invention, a liquid crystal is sealed in a pair of substrates, a plurality of display electrodes are formed in a matrix on one of the substrates, and each display electrode is made of metal.
In a liquid crystal display device in which an insulator-metal nonlinear thin film element is formed, a substance having a dielectric constant larger than that of the liquid crystal is interposed between the display electrode and the opposing substrate. Since it is possible to realize a liquid crystal drive electrode capacitance that is larger than the capacitance of a linear thin film element, it has the effect of greatly improving the effective value ratio between ON and OFF.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はV/3バイアス、マルチプレクス駆動
の波形を示すものである。aは走査線にかかる電
圧波形、bは信号線にかかる電圧波形、cは画素
1にかかる電圧波形である。 1……画素、2……選択時(斜線部) 第2図はMIM装置の特性例を示すものであ
る。第3図はMIM装置の模式図である。 1……上側基板(対向電極側)、2……下側基
板(MIM装置側)、3……画素 第4図はMIM液晶パネルの等価回路を示すも
のである。第5図はMIM液晶パネルの動作を表
わした図である。aはMIM装置の特性、bは液
晶層にかかる電圧波形、cはMIM液晶パネルに
入力する電圧波形である。 1……cの3に示す入力電圧に対応した液晶層
にかかる電圧波形、2……cの4に示す入力電圧
に対応した液晶層にかかる電圧波形、3,4……
入力電圧波形、5……容量分割された電圧値、6
……抵抗分割された電圧値 第6図は容量比を変えた時の液晶層にかかる電
圧波形を示したものである。aはCLC/CMIM
1の時、bはCLC/CMIMが10の時である。 第7図は本発明によるMIM液晶パネルの1画
素周辺の模式図である。 1……MIM装置部分、2……BaTiO3層、3…
…画素電極 第8図は本発明によるMIM液晶パネルの1画
素周辺の模式図である。 1……MIM装置部分、2……BaTiO3粒子、3
……画素電極。
FIG. 1 shows waveforms of V/3 bias and multiplex drive. a is the voltage waveform applied to the scanning line, b is the voltage waveform applied to the signal line, and c is the voltage waveform applied to the pixel 1. 1...Pixel, 2...When selected (shaded area) Fig. 2 shows an example of the characteristics of the MIM device. FIG. 3 is a schematic diagram of the MIM device. 1... Upper substrate (counter electrode side), 2... Lower substrate (MIM device side), 3... Pixel FIG. 4 shows an equivalent circuit of the MIM liquid crystal panel. FIG. 5 is a diagram showing the operation of the MIM liquid crystal panel. a is the characteristic of the MIM device, b is the voltage waveform applied to the liquid crystal layer, and c is the voltage waveform input to the MIM liquid crystal panel. 1... Voltage waveform applied to the liquid crystal layer corresponding to the input voltage shown in c-3, 2... Voltage waveform applied to the liquid crystal layer corresponding to the input voltage shown in c-4, 3, 4...
Input voltage waveform, 5...Capacitance-divided voltage value, 6
...Resistance-divided voltage value Figure 6 shows the voltage waveform applied to the liquid crystal layer when the capacitance ratio is changed. A is when C LC /C MIM is 1, and b is when C LC /C MIM is 10. FIG. 7 is a schematic diagram of the vicinity of one pixel of the MIM liquid crystal panel according to the present invention. 1... MIM device part, 2... BaTiO 3 layer, 3...
...Pixel electrode FIG. 8 is a schematic diagram of the vicinity of one pixel of the MIM liquid crystal panel according to the present invention. 1... MIM device part, 2... BaTiO 3 particles, 3
...Pixel electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 一対の基板内に液晶が封入され該基板の一方
の基板上にマトリクス状に複数の表示電極が形成
され、各表示電極には金属−絶縁体−金属の非線
型薄膜素子が形成されてなる液晶表示装置におい
て、該表示電極と対向する基板との間に該液晶の
比誘電率より大きな比誘電率を有する粒子が塗布
もしくは分散されてなることを特徴とする液晶表
示装置。
1 A liquid crystal is sealed in a pair of substrates, a plurality of display electrodes are formed in a matrix on one of the substrates, and a metal-insulator-metal nonlinear thin film element is formed on each display electrode. 1. A liquid crystal display device, characterized in that particles having a dielectric constant larger than the dielectric constant of the liquid crystal are coated or dispersed between the display electrode and the opposing substrate.
JP56105183A 1981-07-06 1981-07-06 Liquid crystal display Granted JPS587178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105183A JPS587178A (en) 1981-07-06 1981-07-06 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105183A JPS587178A (en) 1981-07-06 1981-07-06 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPS587178A JPS587178A (en) 1983-01-14
JPS6217751B2 true JPS6217751B2 (en) 1987-04-20

Family

ID=14400556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105183A Granted JPS587178A (en) 1981-07-06 1981-07-06 Liquid crystal display

Country Status (1)

Country Link
JP (1) JPS587178A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02173728A (en) * 1988-12-27 1990-07-05 Seiko Epson Corp Active device
JP2870016B2 (en) * 1989-05-18 1999-03-10 セイコーエプソン株式会社 Liquid crystal device

Also Published As

Publication number Publication date
JPS587178A (en) 1983-01-14

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