JPS6217851B2 - - Google Patents
Info
- Publication number
- JPS6217851B2 JPS6217851B2 JP56006685A JP668581A JPS6217851B2 JP S6217851 B2 JPS6217851 B2 JP S6217851B2 JP 56006685 A JP56006685 A JP 56006685A JP 668581 A JP668581 A JP 668581A JP S6217851 B2 JPS6217851 B2 JP S6217851B2
- Authority
- JP
- Japan
- Prior art keywords
- spinner
- glass substrate
- photoresist
- resist coating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は基体表面にフオトレジストを塗布する
ためのレジスト塗布装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resist coating device for coating a photoresist onto a substrate surface.
半導体装置を製造するに際しては、半導体基板
中に不純物を選択的に拡散したり、また選択的に
エツチングする工程が何回も繰り返される。選択
拡散および選択エツチングにはPEP工程(Photo
Engraving Process)が付随し、PEP工程を行な
う為にはフオトレジストを半導体基板表面に極く
薄く均一に塗布しなければならない。一方、上記
選択拡散および選択エツチングに付随したPEPに
使用するフオトマスク(塗布されたフオトレジス
ト膜を選択的に露光するためのマスク)を作成す
る際にもPEPが行なわれ、この場合にも例えばガ
ラス基板等の表面にフオトレジストを極く薄く均
一に塗布することが要求される。 When manufacturing a semiconductor device, processes of selectively diffusing impurities into a semiconductor substrate and selectively etching are repeated many times. PEP process (Photo) is used for selective diffusion and selective etching.
In order to perform the PEP process, photoresist must be applied extremely thinly and uniformly to the surface of the semiconductor substrate. On the other hand, PEP is also performed when creating a photomask (a mask for selectively exposing the coated photoresist film) used for PEP accompanying the selective diffusion and selective etching, and in this case, for example, glass It is required to apply a very thin and uniform photoresist to the surface of a substrate or the like.
第1図は従来から行なわれているレジスト塗布
方法を示す説明図である。同図において、1はス
ピンナーと呼ばれるレジスト塗布装置本体であ
る。該スピンナー1の内部には真空吸引のための
空洞2が形成されている。表面にレジストが塗布
される基体、例えば方形のガラス基板3はこのス
ピンナー1上に載置され、空洞2を介して真空吸
引されることにより強固に保持される。この状態
でガラス基板3上にフオトレジスト4を滴下し、
スピンナー1および強固に保持されたガラス基板
3を回転させれば、滴下されたフオトレジストは
遠心力によつてガラス基板3の中心部から周縁部
に広がり、ガラス基板3の表面に極く薄く均一な
厚さで塗布される。 FIG. 1 is an explanatory diagram showing a conventional resist coating method. In the figure, 1 is a main body of a resist coating device called a spinner. A cavity 2 for vacuum suction is formed inside the spinner 1. A substrate, for example a rectangular glass substrate 3, whose surface is coated with a resist, is placed on the spinner 1 and is firmly held by vacuum suction through the cavity 2. In this state, a photoresist 4 is dropped onto the glass substrate 3,
When the spinner 1 and the firmly held glass substrate 3 are rotated, the dropped photoresist spreads from the center to the periphery of the glass substrate 3 due to centrifugal force, and is uniformly spread over the surface of the glass substrate 3 in an extremely thin layer. It is applied to a certain thickness.
ところが、例えば分子量10万以上、あるいは粘
度40cps以上のフオトレジストを上記の方法で塗
布すると、第2図に示すようにガラス基板の回転
で飛ばされたフオトレジストの雫が長い糸を引く
ようになる。しかも、同図に示すように破線の回
転位置でガラス基板3の隅Aからフオトレジスト
が飛散して糸を引いたままガラス基板3が実線位
置に回転すると、この糸4′がガラス基板3上に
乗つてしまうことが多い。ガラス基板3上に塗布
されるフオトレジスト膜は膜厚約5000Å程度と極
めて薄いのに対して、飛散したフオトレジストの
糸引き現象で生じる糸は肉眼ではつきりと確認で
きるほどに極めて太い。従つて、露光および現像
を行なつても、この糸が付着した部分では露光不
足となり、形成されるパターンに欠陥が生じるこ
とになる。 However, if a photoresist with a molecular weight of 100,000 or more or a viscosity of 40cps or more is applied using the above method, the droplets of photoresist blown away by the rotation of the glass substrate become like long strings, as shown in Figure 2. . Moreover, as shown in the same figure, when the photoresist is scattered from the corner A of the glass substrate 3 at the rotation position indicated by the broken line and the glass substrate 3 is rotated to the solid line position while the thread is being pulled, this thread 4' is placed on the glass substrate 3. I often get carried away. The photoresist film coated on the glass substrate 3 is extremely thin, about 5000 Å thick, whereas the threads produced by the stringing phenomenon of the scattered photoresist are so thick that they can be clearly seen with the naked eye. Therefore, even if exposure and development are performed, the portion to which this thread is attached will be insufficiently exposed, resulting in defects in the formed pattern.
この場合、周囲の雰囲気におけるレジスト溶媒
濃度を零から飽和濃度まで変化させてみたが、糸
引き現象には影響がなかつた。また、糸をからめ
とるために基板が回転する周囲に輪あるいは棒を
静置してみたがあまり効果はなく、むしろこれに
よつて糸引きはより大きくなる。 In this case, the resist solvent concentration in the surrounding atmosphere was varied from zero to saturated concentration, but the stringing phenomenon was not affected. I have also tried placing a ring or a rod around the rotating substrate to untangle the threads, but this has not had much effect, and in fact, this has caused more stringing.
上記の糸引き現象は半導体ウエハーの表面にフ
オトレジストを塗布する場合にも同様に生じる。
またレジスト塗布装置のなかには基体を真空吸引
によらず機械的に保持する構造のスピンナーを具
備したものもあるが、このようなレジスト塗布装
置を用いた場合にも同様に糸引き現象が生じる。 The stringing phenomenon described above similarly occurs when photoresist is applied to the surface of a semiconductor wafer.
Further, some resist coating apparatuses are equipped with a spinner that holds the substrate mechanically without using vacuum suction, but even when such resist coating apparatuses are used, the stringing phenomenon similarly occurs.
本発明は上述の事情に鑑みてなされたもので、
レジストの飛散により生じた糸が基体表面に付着
することなく、レジストを均一に塗布することが
できるレジスト塗布装置を提供するものである。 The present invention was made in view of the above circumstances, and
The present invention provides a resist coating device capable of uniformly coating a resist without attaching threads generated by scattering of the resist to the surface of a substrate.
以下、第3図および第4図を参照して本発明の
実施例を説明する。 Embodiments of the present invention will be described below with reference to FIGS. 3 and 4.
第3図Aは本発明の1実施例になるレジスト塗
布装置のスピンナーを示す平面図であり、同図B
はそのB―B線に沿う断面図である。これらの図
において、11はスピンナーの基台である。該基
台11の裏面には回転軸12が一体に取付けられ
ている。また基台11裏面近傍の回転軸12部分
には4本のアーム131〜134が固着されてい
る。アーム131〜134の夫々には断面L字形
の基体止め141〜144が突設されており、図
中想像線で示す位置に載置されたマスク用のガラ
ス基板15はこの基体止め141〜144に係止
されて保持される。一方、アーム131〜134
の先端には載置されるガラス基板15の周囲を取
り囲む環状の壁体16が固着されている。該壁体
16は全体に末広がりになるように傾斜して設け
られている。 FIG. 3A is a plan view showing a spinner of a resist coating apparatus according to an embodiment of the present invention, and FIG.
is a sectional view taken along the line BB. In these figures, 11 is the base of the spinner. A rotating shaft 12 is integrally attached to the back surface of the base 11. Furthermore, four arms 13 1 to 13 4 are fixed to a portion of the rotating shaft 12 near the back surface of the base 11 . Base stops 14 1 to 14 4 having an L-shaped cross section are protruded from each of the arms 13 1 to 13 4 , and the mask glass substrate 15 placed at the position indicated by the imaginary line in the figure is attached to this base stop. 14 1 to 14 4 and held. On the other hand, arms 13 1 to 13 4
An annular wall 16 that surrounds a glass substrate 15 placed thereon is fixed to the tip of the glass substrate 15 . The wall body 16 is provided so as to be inclined so as to widen toward the end.
上記構成からなるスピンナーの図中想像線で示
す位置に例えば方形のガラス基板15を載置して
スピンナーを回転させれば、ガラス基板15は基
板止め141〜144で係止されているからスピ
ンナーと共に回転する。こうして、ガラス基板1
5を回転させながらその表面にフオトレジストを
滴下して塗布する場合、ガラス基板15の周縁部
(たいていはその四隅)からフオトレジストが糸
を引いて飛散しても、飛散したフオトレジストは
その囲りで同一の角速度で回転している壁体16
に補捉されてそれ以上に糸を引くことはない。こ
の際、上記のように壁体16が末広がりに傾斜さ
れていれば、補足されたフオトレジストの雫は壁
面に沿つて落下する。従つてこのフオトレジスト
の雫が壁体16の上端から更に糸を引いて飛散
し、その糸がガラス基板15上に付着するのを防
止することができる。補足されたフオトレジスト
の雫が壁体16の下端から糸を引いて飛散したと
しても、壁体16の下端はガラス基板15よりも
下に延設されているから、この場合には糸がガラ
ス基板15のレジスト塗布面に付着することはな
い。なお、環状の壁体16の直径はガラス基板1
5に接触しない程度にできるだけ小さくするのが
望ましい。 If, for example, a rectangular glass substrate 15 is placed at the position shown by the imaginary line in the figure of the spinner having the above configuration and the spinner is rotated, the glass substrate 15 is held by the substrate stops 14 1 to 14 4 . Rotates with the spinner. In this way, the glass substrate 1
When applying photoresist by dropping it onto the surface of the glass substrate 15 while rotating the glass substrate 15, even if the photoresist pulls strings from the periphery of the glass substrate 15 (usually the four corners) and scatters, the scattered photoresist will not be scattered around the surrounding area. The wall 16 rotating at the same angular velocity
The situation is captured and no further action is taken. At this time, if the wall 16 is inclined to widen toward the end as described above, the captured drops of photoresist will fall along the wall surface. Therefore, it is possible to prevent the droplets of photoresist from further pulling a thread from the upper end of the wall body 16 and scattering, and from adhering the thread to the glass substrate 15. Even if the captured droplets of photoresist pull a string from the lower end of the wall 16 and scatter, the lower end of the wall 16 extends below the glass substrate 15, so in this case, the thread will not be attached to the glass. It does not adhere to the resist-coated surface of the substrate 15. Note that the diameter of the annular wall body 16 is the same as that of the glass substrate 1.
It is desirable to make it as small as possible so as not to touch 5.
第4図Aは本発明の他の実施例になるレジスト
塗布装置のスピンナーを示す平面図であり、同図
BはそのB―B線に沿う断面図である。この実施
例において、壁体は傾斜されずに垂直に設けら
れ、かつ四つに分割されている。分割された個々
の弧状の壁体161′〜164′はアーム131〜1
34に夫々固着されている。そして、図中想像線
で示される位置に載置され、基台止め141〜1
44に係止固定されるガラス基板15の四隅が弧
状の壁体161′〜164′の間隙から外方に延出す
るように構成されている。その他の構成は総て第
3図の実施例と同じである。 FIG. 4A is a plan view showing a spinner of a resist coating apparatus according to another embodiment of the present invention, and FIG. 4B is a sectional view taken along the line BB. In this embodiment, the wall is not inclined but is vertically arranged and is divided into four parts. The divided individual arc-shaped walls 16 1 ′ to 16 4 ′ are connected to the arms 13 1 to 1
3 and 4 , respectively. Then, it is placed at the position shown by the imaginary line in the figure, and the base stoppers 14 1 to 1
The four corners of the glass substrate 15, which is fixed to the glass substrate 44 , extend outward from the gaps between the arcuate walls 161 ' to 164 '. All other configurations are the same as the embodiment shown in FIG.
ところで、方形のガラス基板15をスピンナー
で回転しながらその表面にフオトレジストを塗布
する場合、フオトレジストの雫はガラス基板15
の四隅から飛散する。従つて、上記構成からなる
スピンナーを用いてフオトレジストを塗布する
と、フオトレジストの雫はガラス基板15の四隅
から壁体161′〜164′の外側に糸を引いて飛散
する。その結果、フオトレジストの飛散で形成さ
れた糸は壁体161′〜164′に阻まれて壁体16
1′〜164′内のガラス基板15上には付着するこ
とはなく、第3図の実施例と同様に優れたフオト
レジスト膜を形成できる効果が得られる。 By the way, when applying photoresist to the surface of the rectangular glass substrate 15 while rotating it with a spinner, the drops of photoresist will be applied to the glass substrate 15.
Scattered from the four corners. Therefore, when photoresist is applied using the spinner having the above-mentioned structure, drops of photoresist are scattered from the four corners of the glass substrate 15 to the outside of the walls 16 1 ′ to 16 4 ′. As a result, the threads formed by the scattering of the photoresist are blocked by the walls 16 1 ′ to 16 4 ′ and
It does not adhere to the glass substrate 15 within 1 ' to 164 ', and an excellent photoresist film can be formed as in the embodiment shown in FIG. 3.
なお、上述の実施例は何れも基板止141〜1
44により係止してガラス基板15をスピンナー
上に固定する構成となつているが、ガラス基板1
5を真空吸引によつてスピンナー基台11上に固
定する構成とすることももちろん可能である。 In addition, in all the above-mentioned embodiments, the substrate stops 14 1 to 1
4. The glass substrate 15 is fixed on the spinner by being locked by the spinner.
Of course, it is also possible to fix the spinner 5 on the spinner base 11 by vacuum suction.
また、第4図の実施例に示されるレジスト塗布
装置は例えばフオトマスクのガラス基板のような
方形の基板にしか適用できないが、第3図の実施
例に示される装置は半導体ウエハーのように略円
形の基体表面にフオトレジストを塗布する場合に
も適用することができる。この場合、基体をスピ
ンナー上に固定する方法としては真空吸引による
方が好ましい。 Furthermore, the resist coating apparatus shown in the embodiment of FIG. 4 can only be applied to rectangular substrates, such as the glass substrate of a photomask, whereas the resist coating apparatus shown in the embodiment of FIG. It can also be applied to the case of coating a photoresist on the surface of a substrate. In this case, vacuum suction is preferred as the method for fixing the substrate on the spinner.
以上詳述したように、本発明のレジスト塗布装
置によれば、基体の周縁から飛散するフオトレジ
ストの雫の糸引き現象によつて形成された糸が基
体のフオトレジスト塗布面に付着するのを防止
し、もつて欠陥のないフオトレジストパターンを
形成できるという顕著な効果を奏することができ
る。 As detailed above, the resist coating apparatus of the present invention prevents threads formed by the stringing phenomenon of photoresist drops scattered from the periphery of the substrate from adhering to the photoresist coated surface of the substrate. It is possible to produce a remarkable effect in that a photoresist pattern without defects can be formed.
第1図はスピンナーによるフオトレジストの塗
布方法を示す説明図、第2図は回転するガラス基
体から飛散したフオトレジストの糸引き現象と、
これによつて形成された糸がガラス基板のレジス
ト塗布面に付着する様子を示す説明図、第3図A
は本発明の1実施例になるレジスト塗布装置のス
ピンナーを示す平面図、第3図Bは同図AのB―
B線に沿う断面図、第4図Aは本発明の他の実施
例になるレジスト塗布装置のスピンナーを示す平
面図、第4図Bは同図AのB―B線に沿う断面図
である。
11……スピンナー基台、12……回転軸、1
31〜134……アーム、141〜144……基
台止め、15……ガラス基板、16,161′〜1
64′……壁体。
Fig. 1 is an explanatory diagram showing the method of applying photoresist using a spinner, and Fig. 2 shows the stringing phenomenon of photoresist scattered from a rotating glass substrate.
An explanatory diagram showing how the threads thus formed adhere to the resist-coated surface of the glass substrate, FIG. 3A
3 is a plan view showing a spinner of a resist coating apparatus according to an embodiment of the present invention, and FIG.
FIG. 4A is a plan view showing a spinner of a resist coating device according to another embodiment of the present invention; FIG. 4B is a cross-sectional view taken along line B--B in FIG. 4A. . 11... Spinner base, 12... Rotating shaft, 1
3 1 - 13 4 ... Arm, 14 1 - 14 4 ... Base stopper, 15 ... Glass substrate, 16, 16 1 ' - 1
6 4 '...Wall body.
Claims (1)
るスピンナーと、該スピンナーの周囲に設けられ
てこれと共に回転する環状壁体とを具備し、この
環状壁体を、その断面と前記スピンナー基台の主
面とで形成される内角を鋭角とすると共に、その
上端が前記スピンナーに保持された基体の主面よ
りも上方に位置し、且つその下端が前記基体の主
面よりも下方に位置するように設置したことを特
徴とするレジスト塗布装置。 2 スピンナーの周囲に設けられた壁体が、スピ
ンナーに固定される基体におけるレジストの飛散
し易い隅部を壁体外方に延出させるために分割し
て設けられていることを特徴とする特許請求の範
囲第1項記載のレジスト塗布装置。[Scope of Claims] 1. A spinner that holds and rotates a substrate to which a resist is to be applied; and an annular wall that is provided around the spinner and rotates together with the spinner; The interior angle formed by the main surface of the spinner base is an acute angle, the upper end thereof is located above the main surface of the base body held by the spinner, and the lower end thereof is located above the main surface of the base body held by the spinner. A resist coating device characterized in that the resist coating device is installed so that the resist coating device is positioned below the resist coating device. 2. A patent claim characterized in that the wall provided around the spinner is divided into parts in order to extend the corner of the base fixed to the spinner where the resist is likely to scatter to the outside of the wall. The resist coating apparatus according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56006685A JPS57121227A (en) | 1981-01-20 | 1981-01-20 | Resist applying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56006685A JPS57121227A (en) | 1981-01-20 | 1981-01-20 | Resist applying device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57121227A JPS57121227A (en) | 1982-07-28 |
| JPS6217851B2 true JPS6217851B2 (en) | 1987-04-20 |
Family
ID=11645205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56006685A Granted JPS57121227A (en) | 1981-01-20 | 1981-01-20 | Resist applying device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57121227A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6467135A (en) * | 1987-08-03 | 1989-03-13 | Rubbermaid Inc | Automatic water-supply planter |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4674724A (en) * | 1982-08-03 | 1987-06-23 | Future Apparatus Corporation | Collapsible stand especially for books |
| JPH02249225A (en) * | 1989-03-22 | 1990-10-05 | Fujitsu Ltd | Resist coating apparatus |
| DE4024642A1 (en) * | 1990-08-03 | 1992-02-06 | Ibm | SLINGER PLATE FOR SUBSTRATE |
| JP2649219B2 (en) * | 1995-05-01 | 1997-09-03 | ホーヤ株式会社 | Spin chuck and treatment liquid application method |
| CN108996468B (en) * | 2018-06-29 | 2020-10-09 | 中国石油天然气股份有限公司 | Encapsulation method and equipment for micron-scale glass etching model |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584587B2 (en) * | 1977-06-14 | 1983-01-27 | 松下電器産業株式会社 | Rotary viscous agent application method and device |
| JPS5472973A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Rotary applying unit |
-
1981
- 1981-01-20 JP JP56006685A patent/JPS57121227A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6467135A (en) * | 1987-08-03 | 1989-03-13 | Rubbermaid Inc | Automatic water-supply planter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57121227A (en) | 1982-07-28 |
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