JPS6220500B2 - - Google Patents
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- Publication number
- JPS6220500B2 JPS6220500B2 JP25509885A JP25509885A JPS6220500B2 JP S6220500 B2 JPS6220500 B2 JP S6220500B2 JP 25509885 A JP25509885 A JP 25509885A JP 25509885 A JP25509885 A JP 25509885A JP S6220500 B2 JPS6220500 B2 JP S6220500B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- gas
- gas detection
- stannic oxide
- temperature compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 238000001514 detection method Methods 0.000 claims description 51
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 46
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 150000002908 osmium compounds Chemical class 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 94
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 13
- 239000001294 propane Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 7
- 229910000487 osmium oxide Inorganic materials 0.000 description 6
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052701 rubidium Inorganic materials 0.000 description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229940102127 rubidium chloride Drugs 0.000 description 2
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002504 iridium compounds Chemical class 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
この発明は、電気抵抗測定によるガス検知素子
であつて、例えば温度補償素子と併用して使用す
る場合、その抵抗温度特性を温度補償素子のそれ
と同一にしてガス検知感度を向上させるようにし
たガス検知素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a gas detection element based on electrical resistance measurement, and when used in combination with a temperature compensation element, for example, the resistance temperature characteristic is made the same as that of the temperature compensation element to improve gas detection sensitivity. The present invention relates to a gas sensing element that improves.
一般に従来より知られているガス検知素子は酸
化第二スズまたは酸化亜鉛、酸化第二鉄などの金
属酸化物にPd、Ptなどの白金系触媒の他にSb、
Ai、Fe、Ni、Zn、Si、Ti、Zrなどを添加してガ
ス感度を向上させる研究が行われてきたが、温度
特性については顧みられず、また事実従来よりガ
ス感度の優れたガス検知素子は多く知られている
が、温度特性の優れたガス検知素子は皆無に等し
い。 Generally, conventionally known gas detection elements are made of metal oxides such as stannic oxide, zinc oxide, or ferric oxide, as well as platinum-based catalysts such as Pd and Pt, as well as Sb,
Research has been conducted to improve gas sensitivity by adding Ai, Fe, Ni, Zn, Si, Ti, Zr, etc., but the temperature characteristics have not been considered, and in fact, gas detection with better gas sensitivity than conventional methods has been carried out. Although many elements are known, there are almost no gas sensing elements with excellent temperature characteristics.
そこで、従来より知られたガス検知素子を使用
してガス検知を行う場合には、最高のガス感度を
確保するような特定温度に素子温度特性を補償し
ながら測定を行うことがなされてきた。 Therefore, when performing gas detection using a conventionally known gas detection element, measurements have been performed while compensating the element temperature characteristics to a specific temperature that ensures the highest gas sensitivity.
しかし、素子温度を特定温度に維持する方法に
おいては、加熱用電源電圧変動や環境温度変化の
影響を受けて素子温度が変化するため実際上、ガ
ス感度特性を一定に保持することは困難である。 However, in the method of maintaining the element temperature at a specific temperature, it is difficult to maintain the gas sensitivity characteristics constant because the element temperature changes due to fluctuations in the heating power supply voltage and changes in the environmental temperature. .
またガス検知素子の温度特性を補償する方法に
ついては、従来より使用電源電圧変動に対しては
安定化電源、チエナーダイオードを、環境温度変
化に対してはバイメタル、サーミスタを使用して
きたが、これらの補償法は必然的に複雑な電気回
路になりがちで高価なわりに補償範囲が狭いもの
になつている。 In addition, conventional methods for compensating the temperature characteristics of gas detection elements have been to use stabilized power supplies and Chener diodes to deal with fluctuations in the power supply voltage, and to use bimetals and thermistors to deal with environmental temperature changes. Compensation methods tend to require complicated electrical circuits, are expensive, and have a narrow compensation range.
そこで、本願発明者等は原出願(特願昭54―
73470号)で、ガス検知素子と併用して該ガス検
知素子のガス感度を確実に、かつ高度に維持する
ことができるような温度補償素子を提案した。 Therefore, the inventors of the present application
No. 73470) proposed a temperature compensation element that can be used in conjunction with a gas detection element to reliably maintain the gas sensitivity of the gas detection element at a high level.
この温度補償素子はガス検知素子と同じ抵抗係
数をもちながらガス感度の殆どない新規な金属酸
化物半導体であつて、具体的にはルビジウム、イ
リジウム化合物の一種又は二種以上を0.1wt%か
ら3wt%の範囲で配合した酸化第二スズ、酸化亜
鉛を主成分とする焼結体から構成される金属酸化
物半導体素子で構成されている。 This temperature compensation element is a new metal oxide semiconductor that has the same resistance coefficient as the gas detection element but has almost no gas sensitivity. It is composed of a metal oxide semiconductor element composed of a sintered body whose main components are stannic oxide and zinc oxide blended in a range of 5%.
即ち、例えば酸化第二スズに塩化第二スズに塩
化パルジウムを添加した場合にはプロパンガス感
度は向上するのであるが、酸化第二スズにルビジ
ウム、イリジウム化合物を添加すると、酸化第二
スズのプロパンガス感度は完全に失われ、しかも
抵抗係数は変らない。 That is, for example, if paldium chloride is added to stannic oxide, the propane gas sensitivity will be improved, but if rubidium or iridium compounds are added to stannic oxide, the propane gas sensitivity will be improved. Gas sensitivity is completely lost and the drag coefficient remains unchanged.
これを更に詳しく説明すると、第1図は種々の
触媒を酸化第二スズに添加した素子のプロパンガ
ス検知特性を示すものである。これによれば、添
加によつて無添加の酸化第二スズ素子より高い感
度を示したが、オスミウム、ロジウムについては
無添加の酸化第二スズ素子と同程度の感度を示
し、ルビジウムについてはプロパンガスに対する
検知能力を失わせる効果をもつており、またイリ
ジウムについてはこれより低温度焼成して素子を
製造した場合にプロパンガス検知能力は失われて
いる。 To explain this in more detail, FIG. 1 shows the propane gas detection characteristics of elements in which various catalysts are added to stannic oxide. According to this, the dopant showed higher sensitivity than the undoped stannic oxide element, but it showed the same sensitivity for osmium and rhodium as the undoped stannic oxide element, and for rubidium it showed the same sensitivity as the unadded stannic oxide element. This has the effect of causing a loss of gas detection ability, and when an element is manufactured by firing iridium at a lower temperature than this, the propane gas detection ability is lost.
この効果はn型半導体を原子価制御することに
よりp型半導体化した結果得られたものである
が、この現象を利用することによりガス検知素子
の温度補償を行なうことができる。 This effect was obtained as a result of converting an n-type semiconductor into a p-type semiconductor by controlling the valence, and by utilizing this phenomenon, temperature compensation of the gas sensing element can be performed.
これを第2図に従つて説明すると、第2図はガ
ス検知素子と原出願の温度補償素子との抵抗温度
特性の比較を示すものである。 This will be explained with reference to FIG. 2. FIG. 2 shows a comparison of the resistance-temperature characteristics of the gas sensing element and the temperature compensating element of the original application.
ここでガス検知素子は93wt%酸化第二スズ、
1wt%塩化パラジウム、1wt%焼結助剤、5wt%ガ
ス成分を主成分とするものを使用した。Aは、検
知素子の空気中における抵抗温度曲線、Cは、検
知素子のプロパンガス0.1V%含む空気中におけ
る抵抗温度曲線を示す。 Here, the gas detection element is 93wt% stannic oxide,
The main components used were 1wt% palladium chloride, 1wt% sintering aid, and 5wt% gas component. A shows the resistance temperature curve of the sensing element in air, and C shows the resistance temperature curve of the sensing element in air containing 0.1 V% of propane gas.
また温度補償素子は92wt%酸化第二スズ、1wt
%塩化パラジウム、1wt%塩化ルビジウム、1wt
%焼結助剤、5wt%ガラス成分を主成分とするも
のを使用した。Bは、温度補償素子の空気中にお
ける抵抗温度曲線、Dは温度補償素子のプロパン
ガス0.1V%含む空気中における抵抗温度曲線を
示す。 In addition, the temperature compensation element is 92wt% stannic oxide, 1wt
% Palladium Chloride, 1wt% Rubidium Chloride, 1wt
% sintering aid and 5 wt% glass component were used. B shows the resistance temperature curve of the temperature compensation element in air, and D shows the resistance temperature curve of the temperature compensation element in air containing 0.1 V% of propane gas.
第2図によれば、検知素子はガス検知前後でA
とCの電気抵抗比率が最大を示すときの素子温
度、即ち250℃から450℃の間のある特定温度で測
定を行うのであるが、AとCの電気抵抗比率が素
子温度で変わるため、温度補償する必要がある。
これに対して、CとDの電気抵抗比率は、第2図
より明らかなように素子温度に関係なく常に一定
であるから検知素子の温度補償素子として利用す
ることができるのである。 According to Figure 2, the detection element is A before and after gas detection.
Measurements are made at the element temperature when the electrical resistance ratio of It is necessary to compensate.
On the other hand, as is clear from FIG. 2, the electric resistance ratio between C and D is always constant regardless of the element temperature, so it can be used as a temperature compensating element for the sensing element.
原出願ではこの現象を利用してガス検知素子と
温度補償素子とからなるガス検知装置を提案し
た。 The original application utilized this phenomenon to propose a gas detection device consisting of a gas detection element and a temperature compensation element.
しかし、このガス検知装置は第2図のCとDの
ように電気抵抗比率が素子温度に関係なく常に一
定である場合には温度補償され、精度よくガス検
知を行なうことができるが、検知ガスの種類或は
検知素子の成分が異なる場合には、この比率が一
定でなくなることもあり、このような場合には精
度のよいガス検知を行なうことができない。 However, when the electrical resistance ratio is always constant regardless of the element temperature, as shown in C and D in Figure 2, this gas detection device is temperature compensated and can detect gas with high accuracy; If the types of gases or the components of the sensing elements are different, this ratio may not be constant, and in such cases, highly accurate gas detection cannot be performed.
そこで、この発明では上述のようにガス検知素
子と温度補償素子の電気抵抗比率が異なるような
場合にも、正確なガス検知ができるような方法を
研究した結果、オスミウム化合物がガス検知素子
の抵抗温度係数の低下に寄与することを見出し、
この知見を基にこの発明を完成したものである。 Therefore, in this invention, as mentioned above, we researched a method that allows accurate gas detection even when the electrical resistance ratio of the gas detection element and the temperature compensation element is different. It was found that this contributes to a decrease in the temperature coefficient,
This invention was completed based on this knowledge.
第3図は、オスミウム化合物が素子の抵抗温度
係数の低下に寄与することを示す素子の抵抗温度
特性曲線である。ここでイは塩化ルビジウム
0.7wt%添加した酸化第二スズ素子の抵抗温度曲
線、ロは塩化イリジウム1.7wt%添加した酸化第
二スズ素子の抵抗温度曲線、ハは酸化オスミウム
1.4wt%添加した酸化第二スズ素子の抵抗温度曲
線、ニはロジウム粉末0.6wt%添加した酸化第二
スズ素子の抵抗温度曲線、ホは塩化パラジウム
1wt%添加した酸化第二スズ素子の抵抗温度曲線
を示す。 FIG. 3 is a resistance-temperature characteristic curve of the device showing that the osmium compound contributes to lowering the temperature coefficient of resistance of the device. Here, A is rubidium chloride
Resistance-temperature curve of a stannic oxide element doped with 0.7wt%, B is a resistance-temperature curve of a stannic oxide element doped with 1.7wt% iridium chloride, C is osmium oxide
Resistance temperature curve of stannic oxide element added with 1.4wt%, D is resistance temperature curve of stannic oxide element added with 0.6wt% rhodium powder, E is palladium chloride
The resistance temperature curve of a stannic oxide element doped with 1wt% is shown.
これより明らかなように、ルビジウム、イリジ
ウム、パルジウムについては抵抗温度係数の低下
が全く認められなかつたが、酸化オスミウムにつ
いては抵抗温度係数の低下に寄与する。 As is clear from this, no decrease in the temperature coefficient of resistance was observed for rubidium, iridium, and paldium, but osmium oxide contributed to a decrease in the temperature coefficient of resistance.
また、オスミウム化合物は第1図にも示したよ
うにガス感度については無添加の酸化第二スズ素
子と同程度の感度を示すため、ガスによる影響が
なく、ガス検知素子に配合することができる。 Furthermore, as shown in Figure 1, osmium compounds exhibit gas sensitivity comparable to that of additive-free stannic oxide elements, so they are not affected by gases and can be incorporated into gas detection elements. .
したがつて、この発明では酸化第二スズ、酸化
亜鉛を主成分とする焼結体により構成されるガス
検知素子において、オスミウム化合物を0.1wt%
から3wt%の範囲内で、配合してその電気抵抗比
率を温度補償素子の電気抵抗比率と同一にするよ
うに調整したものである。 Therefore, in this invention, in a gas detection element composed of a sintered body mainly composed of stannic oxide and zinc oxide, 0.1 wt% of the osmium compound is used.
and 3wt%, and the electrical resistance ratio is adjusted to be the same as the electrical resistance ratio of the temperature compensating element.
なお、この場合オスミウム化合物の配合量が
0.1wt%以下では周囲温度による素子特性の変動
を補償する効果が低下し、また3wt%以上では配
合物によるガス感知選択能力を考慮する必要が生
じてくる。 In this case, the amount of osmium compound added is
Below 0.1 wt%, the effect of compensating for variations in device characteristics due to ambient temperature decreases, and above 3 wt%, it becomes necessary to consider the gas sensing and selection ability of the compound.
また、オスミウム化合物は温度補償素子に配合
してその電気抵抗比率をガス検知素子のそれと同
一にするようにしてもよい。 Furthermore, the osmium compound may be added to the temperature compensating element to make its electrical resistance ratio the same as that of the gas sensing element.
なお、この場合温度補償素子とガス検知素子の
配合成分及び配合割合は検知ガスの種類によつて
異なり、検知ガスがプロパンの場合には、例えば
酸化第二スズに塩化パルジウム、酸化オスミウム
を配合したガス検知素子に対して酸化第二スズに
酸化オスミウムを配合した温度補償素子を使用す
ることができる。 In this case, the compounding components and proportions of the temperature compensation element and the gas detection element differ depending on the type of detection gas, and when the detection gas is propane, for example, paldium chloride and osmium oxide are blended with stannic oxide. For the gas detection element, a temperature compensation element in which osmium oxide is mixed with stannic oxide can be used.
更に、ガス検知素子にオスミウム化合物の配合
してその電気抵抗比率を調整すれば、温度補償素
子と併用することなく、単独で使用して正確なガ
ス検知を行なわせることもできる。 Furthermore, by blending an osmium compound into the gas sensing element and adjusting its electrical resistance ratio, it is possible to use it alone to perform accurate gas detection without using it together with a temperature compensating element.
次に、この発明に係るガス検知素子を利用した
補償法について説明すると、この補償はこの発明
に係る検知素子を組み込んだ検知回路に、温度補
償素子を組み込んだ温度補償回路を併設した装置
を利用することにより行なうことができる。 Next, a compensation method using the gas detection element according to the present invention will be explained. This compensation uses a device in which a temperature compensation circuit incorporating a temperature compensation element is added to a detection circuit incorporating the detection element according to the present invention. This can be done by doing.
例えば、ブリツジ回路の一辺にこの発明に係る
検知素子を組み込み、他の一辺に温度補償素子を
組み込んで回路装置を構成し、被検知ガスを含む
ガスを検知素子を通過する際の電気抵抗値を温度
補償素子によつて補償して測定し、該測定値より
ガス中の被検知ガス量を測定するのである。 For example, a circuit device may be constructed by incorporating the sensing element according to the present invention on one side of a bridge circuit and a temperature compensation element on the other side, and adjusting the electrical resistance value when gas containing the gas to be detected passes through the sensing element. The measurement is performed while being compensated by a temperature compensation element, and the amount of gas to be detected in the gas is determined from the measured value.
この場合検知素子と温度補償素子の温度が同一
でないと、検知素子と温度補償素子の電気抵抗比
率が一定になり得ず、補償効果が発揮できない。 In this case, if the temperatures of the sensing element and the temperature compensating element are not the same, the electric resistance ratio between the sensing element and the temperature compensating element cannot be constant, and the compensation effect cannot be exhibited.
しかし、検知素子と温度補償素子の温度は、電
源電圧変動や環境温度変化の影響を受けるところ
からこれを同一にすることが困難である。 However, it is difficult to make the temperatures of the sensing element and the temperature compensation element the same because they are affected by power supply voltage fluctuations and environmental temperature changes.
そこで、この実施例では電源電圧変動や環境変
化の影響を受けないようにするために、第4図に
示すように加熱可能な電気絶縁体基板1の一面に
は両端に電極2a,2bを有する加熱抵抗体3を
設け、電極2a,2bには加熱用電源4を接続す
るとともに、基板1の他面には両端に電極5a,
5bを有するガス検知素子6と両端に電極7a,
7bを有する温度補償素子8を設け、更にガス検
知素子6、温度補償素子8及び固定抵抗R、可変
抵抗R′でガス検知用ブリツチ回路を構成する。 Therefore, in this embodiment, in order to avoid being affected by power supply voltage fluctuations and environmental changes, one surface of the heatable electric insulating substrate 1 is provided with electrodes 2a and 2b at both ends, as shown in FIG. A heating resistor 3 is provided, a heating power source 4 is connected to the electrodes 2a and 2b, and electrodes 5a and 5 are connected to the other side of the substrate 1 at both ends.
5b and electrodes 7a at both ends,
A temperature compensation element 8 having a temperature compensation element 7b is provided, and a blitz circuit for gas detection is further comprised of the gas detection element 6, the temperature compensation element 8, a fixed resistor R, and a variable resistor R'.
そしてガス検知測定に際しては加熱用電源4に
よつて加熱抵抗体3を加熱し、ガス検知素子6と
温度補償素子8を同一の加熱条件下において温度
補償しながらガス検知を行うのである。 During gas detection and measurement, the heating resistor 3 is heated by the heating power source 4, and the gas detection is performed while compensating the temperature of the gas detection element 6 and temperature compensation element 8 under the same heating conditions.
この場合ガス検知素子6と温度補償素子8は同
一の加熱条件下に置かれているため、電源電圧変
動や環境温度変化の影響を受けることなく測定す
ることができ、したがつて出力端子Oからは正確
に温度補償された測定値を取り出すことができ
る。 In this case, since the gas detection element 6 and the temperature compensation element 8 are placed under the same heating conditions, measurement can be performed without being affected by power supply voltage fluctuations or environmental temperature changes. can take accurate temperature compensated measurements.
なお、第4図の実施例では、加熱可能な電気絶
縁体基板1の裏面に加熱抵抗体3を設け、該加熱
抵抗体3を加熱する例について述べたが、加熱抵
抗体3を設けなくても電源電圧変動や環境温度変
化の影響を受けないような場合には、同一基板上
に検知素子と温度補償素子を設ければよい。 In the embodiment shown in FIG. 4, the heating resistor 3 is provided on the back surface of the heatable electrical insulating substrate 1, and the heating resistor 3 is heated. However, the heating resistor 3 may not be provided. If the sensor is not affected by power supply voltage fluctuations or environmental temperature changes, the sensing element and the temperature compensation element may be provided on the same substrate.
一方、上記実施例では温度補償素子を用いてガ
ス検知素子の温度補償を行う例について述べた
が、前述のようにガス検知素子に配合されるオス
ミウム化合物の量を調節すれば、特別に温度補償
素子を用いなくても温度補償されたガス検知を行
うことができる。 On the other hand, in the above embodiment, an example was described in which the temperature compensation element is used to compensate the temperature of the gas detection element. Temperature-compensated gas sensing can be performed without using an element.
また、この実施例ではプロパンガスについて述
べたが、金属酸化物中に配合するパラジウム、ル
ビジウム、イリジウム、オスミウム化合物、ロジ
ウムの種類を選択し、また添加量を選択すること
により一酸化炭素ガス、都市ガス等のガス検知の
温度補償も行うことができる。 Although propane gas was described in this example, carbon monoxide gas, urban Temperature compensation for gas detection, such as gas, can also be performed.
第5図は、パラジウム、ルビジウムを酸化第二
スズに添加した場合のプロパンガス(実線)、一
酸化炭素ガス(破線)の選択特性を示すものであ
り、このようにガス選択性の異なる素子を使用す
ることにより2種以上のガスを含む場合のガス検
知を行うことができる。 Figure 5 shows the selectivity characteristics of propane gas (solid line) and carbon monoxide gas (dashed line) when palladium and rubidium are added to stannic oxide. By using this, it is possible to detect gases containing two or more types of gases.
第6図は、2種以上のガスを含む場合のガス検
知の実施態様を示すものであり、電気絶縁体基板
1の一面にはガス検知素子6と温度補償素子8の
他にガス検知素子6′、温度補償素子8′を設け、
第4図に示すようにガス検知素子6、温度補償素
子8を組み込んだブリツヂ回路を構成するととも
にガス検知素子6′、温度補償素子8′を組み込ん
だブリツヂ回路を構成する。 FIG. 6 shows an embodiment of gas detection when two or more types of gases are included. ', a temperature compensation element 8' is provided,
As shown in FIG. 4, a bridge circuit incorporating a gas sensing element 6 and a temperature compensating element 8 is constructed, and a bridge circuit incorporating a gas sensing element 6' and a temperature compensating element 8' is constructed.
そしてガス検知測定に際しては加熱用電源4に
よつて加熱抵抗体3を加熱し、ガス検知素子6,
6′、温度補償素子8,8′を同一の加熱条件下に
おいて温度補償しながらガス検知を行うのであ
る。 When performing gas detection measurement, the heating resistor 3 is heated by the heating power source 4, and the gas detection element 6,
Gas detection is performed while temperature compensating the temperature compensating elements 6' and 8' under the same heating condition.
この場合ガス検知素子6,6′にガス選択性あ
る素子を使用すれば、2種のガス、例えばプロパ
ンと一酸化炭素が別々の素子に検知される。 In this case, if gas-selective elements are used as the gas detection elements 6, 6', two types of gases, for example propane and carbon monoxide, are detected by separate elements.
そこで多種類のガスを同時に、しかも温度補償
されて正確に測定することができるのである。 Therefore, it is possible to measure many types of gases simultaneously and accurately with temperature compensation.
更に、上記実施例のようなガス検知装置におい
ては故障がなく、微弱素子温度変化も瞬時に確実
に補償でき、かつ安価で小型化が可能となる。 Furthermore, the gas detection device as in the embodiment described above is free of failures, can instantaneously and reliably compensate for changes in the temperature of weak elements, and can be made inexpensive and compact.
次に、この発明を実施例によつて具体的に説明
するが、この発明はこの要旨を越えない限り、以
下の実施例に限定されるものでない。 Next, the present invention will be specifically explained with reference to examples, but the present invention is not limited to the following examples unless it goes beyond the gist of the invention.
実施例
92.6wt%酸化第二スズ、1.4wt%酸化オスミウ
ム、1wt%焼結助剤、5wt%ガラス成分を主成分
とするガス検知素子のガス感度特性は第1図(◎
の直線)、抵抗温度特性は第3図のハに示すごと
くであつた。Example The gas sensitivity characteristics of a gas sensing element whose main components are 92.6wt% stannic oxide, 1.4wt% osmium oxide, 1wt% sintering aid, and 5wt% glass are shown in Figure 1 (◎
(straight line), and the resistance-temperature characteristics were as shown in Fig. 3 (c).
また、上記ガス検知素子を温度補償素子8とし
て使用する場合には、ガス検知素子6としては
93wt%酸化第二スズ、1wt%塩化パルジウム、
1wt%焼結助剤、5wt%ガラス成分の組成に1.4wt
%の酸化オスミウムを配合して焼成したものが、
上記温度補償素子8の抵抗温度特性と略々同一の
抵抗温度特性を示したのでこれを使用した。 In addition, when using the above gas detection element as the temperature compensation element 8, as the gas detection element 6,
93wt% stannic oxide, 1wt% paldium chloride,
1wt% sintering aid, 1.4wt to 5wt% glass component composition
% of osmium oxide and fired.
This element was used because it exhibited a resistance-temperature characteristic that was substantially the same as that of the temperature compensation element 8 described above.
そして、この両素子を電気絶縁体基板1上に印
刷し、650℃から800℃の電気炉中で焼成し、第4
図に示した電気回路に組み込んでプロパンガスの
検知測定を行なつたところ、ガス感度は電源変動
や環境温度変化の影響を受けることなく測定する
ことができた。 Then, both of these elements are printed on an electric insulator substrate 1, and fired in an electric furnace at 650°C to 800°C.
When installed in the electrical circuit shown in the figure to detect and measure propane gas, gas sensitivity could be measured without being affected by power supply fluctuations or environmental temperature changes.
第1図は、種々の触媒を添加した素子のガス検
出特性を示す図、第2図は、素子の表面温度に対
しての電気抵抗特性を示す図、第3図は、種々の
触媒を添加した場合の抵抗温度特性を示す図、第
4図は、この発明の一実施態様を示す回路装置の
概略図、第5図は、種々の触媒を添加した場合の
ガス選択特性を示す図、第6図は、2種以上のガ
スを同時に検知する場合の実施態様を示す図であ
る。
Figure 1 shows the gas detection characteristics of the element with various catalysts added. Figure 2 shows the electrical resistance characteristics with respect to the surface temperature of the element. Figure 3 shows the gas detection characteristics of the element with various catalysts added. 4 is a schematic diagram of a circuit device showing an embodiment of the present invention. FIG. 5 is a diagram showing gas selection characteristics when various catalysts are added. FIG. 6 is a diagram showing an embodiment in which two or more types of gas are detected simultaneously.
Claims (1)
体の電気抵抗を測定するガス検知素子において、
該ガス検知素子にオスミウム化合物を0.1wt%か
ら3wt%の範囲で配合するようにしたことを特徴
とするガス検知素子。1. In a gas detection element that measures the electrical resistance of a sintered body whose main components are stannic oxide and zinc oxide,
A gas sensing element characterized in that the gas sensing element contains an osmium compound in a range of 0.1wt% to 3wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25509885A JPS61221638A (en) | 1985-11-15 | 1985-11-15 | Gas detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25509885A JPS61221638A (en) | 1985-11-15 | 1985-11-15 | Gas detecting element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7347079A Division JPS55166032A (en) | 1979-06-13 | 1979-06-13 | Gas detecting element and gas detecting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61221638A JPS61221638A (en) | 1986-10-02 |
| JPS6220500B2 true JPS6220500B2 (en) | 1987-05-07 |
Family
ID=17274085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25509885A Granted JPS61221638A (en) | 1985-11-15 | 1985-11-15 | Gas detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61221638A (en) |
-
1985
- 1985-11-15 JP JP25509885A patent/JPS61221638A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61221638A (en) | 1986-10-02 |
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