JPS6222652B2 - - Google Patents
Info
- Publication number
- JPS6222652B2 JPS6222652B2 JP53014896A JP1489678A JPS6222652B2 JP S6222652 B2 JPS6222652 B2 JP S6222652B2 JP 53014896 A JP53014896 A JP 53014896A JP 1489678 A JP1489678 A JP 1489678A JP S6222652 B2 JPS6222652 B2 JP S6222652B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- microwave
- waveguide
- activated
- supply pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
本発明は被処理物に活性化されたガスを照射し
て種々の処理を行なうのに用いる活性化ガス発生
装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in an activated gas generating device used to perform various treatments by irradiating an activated gas onto an object to be treated.
従来、真空放電によるプラズマを利用して生成
され活性化された反応ガスを被処理物に照射して
各種の処理を行なう試みが成されている。従来装
置の例を第1図により説明する。被処理物11を
載置しパツキン9及びフタ10により気密を保持
し内部が真空度数Torr以下に減圧される反応器
7があり、排気管7bを介して排気装置8が連設
されている。反応器7にはガス供給管7aと排気
管7bとが被処理物11をはさんで設けられてお
り、ガス供給管7aには流量調節弁12を介して
反応ガス源が接続されている。またガス供給管7
aは導波管5を貫通しており、マイクロ波発振器
1から発生したマイクロ波電力により供給された
反応ガスがプラズマ領域7cで活性化される。整
合器4及び摺動短絡板6はマイクロ波電力を効率
良く反応ガスに吸収させるためのものである。パ
ワーモニタ3はマイクロ波電力の吸収具合を検知
するためのもので指示計3aに吸収具合が指示さ
れる。活性化された反応ガスは排気装置8の方向
に吸引され被処理物11に当り表面処理が行なわ
れる。 2. Description of the Related Art Conventionally, attempts have been made to perform various treatments by irradiating a workpiece with a reactive gas generated and activated using plasma generated by vacuum discharge. An example of a conventional device will be explained with reference to FIG. There is a reactor 7 in which a workpiece 11 is placed, the reactor 7 is kept airtight with a gasket 9 and a lid 10, and the inside pressure is reduced to a vacuum degree of Torr or less, and an exhaust device 8 is connected to the reactor 7 through an exhaust pipe 7b. The reactor 7 is provided with a gas supply pipe 7a and an exhaust pipe 7b with the object to be treated 11 in between, and a reactant gas source is connected to the gas supply pipe 7a via a flow rate control valve 12. Also, gas supply pipe 7
a passes through the waveguide 5, and the reactant gas supplied by the microwave power generated from the microwave oscillator 1 is activated in the plasma region 7c. The matching device 4 and the sliding short-circuit plate 6 are used to efficiently absorb microwave power into the reaction gas. The power monitor 3 is for detecting the degree of absorption of microwave power, and the degree of absorption is indicated by an indicator 3a. The activated reaction gas is sucked in the direction of the exhaust device 8 and hits the object to be treated 11 for surface treatment.
前述のような従来の装置を使用して導波管5部
でガス供給管7a内の反応ガスを活性化して被処
理物11に当てる場合、供給管の直径には限度が
あつて反応器内への活性化ガス供給量はあまり多
くなく被処理物が小さい場合は比較的均一に処理
されるが、大きい場合には均一処理出来ない。ま
た通常ガス供給管7aは石英のような活性化ガス
で侵蝕されにくい誘電体で製作するのが一般的で
あるが、これは破損しやすくまた高価である。 When using the conventional device as described above to activate the reaction gas in the gas supply pipe 7a using the waveguide 5 and applying it to the object to be processed 11, there is a limit to the diameter of the supply pipe, and the inside of the reactor The amount of activated gas supplied to is not very large, and if the object to be processed is small, it will be processed relatively uniformly, but if it is large, it will not be able to be processed uniformly. Further, the gas supply pipe 7a is generally made of a dielectric material such as quartz which is not easily corroded by the activated gas, but this is easily damaged and expensive.
さらに、上述した従来の装置は活性化ガス圧力
がおよそ0.5Torr以下になると実験的に電波洩れ
が多くなる欠点も有する。 Furthermore, the conventional device described above also has the disadvantage that radio wave leakage increases experimentally when the activation gas pressure becomes approximately 0.5 Torr or less.
本発明は、このような欠点を解消するためのも
ので比較的多量の活性化された反応ガスを得るこ
とが可能な活性化ガス発生装置を提供するもので
ある。 The present invention is intended to eliminate such drawbacks, and provides an activated gas generation device that can obtain a relatively large amount of activated reaction gas.
以下本発明の実施例を図面を参照しながら説明
する。第2図、第3図に示す本発明実施例の装置
は、マイクロ波発振器101にて発生したマイク
ロ波電力が発振器保護用アイソレータ102、パ
ワーモニタ103、整合器104、コーナ105
を介して給電導波管107に伝送される。給電導
波管107は矩形をなし、そのH(磁界)面10
7bと平行に反応ガスを供給するための導電体製
のガス供給管108がE(電界)面107aから
中央部まで挿入されている。供給管108の他端
には反応ガス供給源110が接続されており流量
調節弁109により反応ガスの流量が調節できる
よううになつている。給電導波管107とコーナ
105との間にはマイクロ波電力は通過させるが
気体は通過させない誘電体材料例えばセラミツ
ク、石英などで作られている気密板106が気密
に設けられており、もう一方の終端部は真空容器
111に接続され気体が流通可能に結合されてい
る。真空容器111の入口付近にはマイクロ波を
遮断し気体を通すパンチングメタルのようなシー
ルド板121がとりつけられている。容器内には
被処理物113を載置するための載置台114が
設けられていると共に、真空容器111内を排気
するための排気管115、排気装置116が導波
管と反対側に接続されている。整流板112は被
処理物113に活性化された反応ガスを均一に照
射するためのものである。 Embodiments of the present invention will be described below with reference to the drawings. In the device according to the embodiment of the present invention shown in FIGS. 2 and 3, the microwave power generated in the microwave oscillator 101 is transmitted to the oscillator protection isolator 102, the power monitor 103, the matching box 104, and the corner 105.
The signal is transmitted to the feeding waveguide 107 via. The feeding waveguide 107 has a rectangular shape, and its H (magnetic field) plane 10
A gas supply pipe 108 made of a conductor for supplying a reaction gas in parallel with the E (electric field) plane 107a is inserted from the E (electric field) plane 107a to the center. A reactant gas supply source 110 is connected to the other end of the supply pipe 108, and the flow rate of the reactant gas can be adjusted by a flow rate control valve 109. An airtight plate 106 made of a dielectric material such as ceramic or quartz, which allows microwave power to pass through but not gas, is airtightly provided between the feeding waveguide 107 and the corner 105. The terminal end is connected to a vacuum container 111 so that gas can flow therethrough. A shield plate 121, such as a punched metal plate, is installed near the entrance of the vacuum container 111 to block microwaves and allow gas to pass through. A mounting table 114 for placing the object to be processed 113 is provided inside the container, and an exhaust pipe 115 and an exhaust device 116 for exhausting the inside of the vacuum container 111 are connected to the side opposite to the waveguide. ing. The current plate 112 is used to uniformly irradiate the object 113 with activated reaction gas.
さてこのような本発明の装置で、被処理物11
3を処理する場合、被処理物113を載置台11
4に載置した後排気装置116を動作させ真空容
器111内を真空度10-1Torr以下に排気する。
その後活性化する反応ガスをガス供給源110よ
り送り込み、流量調節弁109を調節して給電導
波管107及び真空容器111内の真空度10〜
10-1Torrにする。こうしてマイクロ波発振器1
01を動作してマイクロ波電力を発生させ、アイ
ソレータ102、パワーモニタ103、整合器1
04、コーナ105を介して給電導波管107に
伝送し、給電導波管107内の反応ガスを活性化
させる。活性化された反応ガスは排気装置116
方向へ吸引され、その途中で被処理物113に当
り目的の処理がおこなわれる。なお、整合器10
4を調節してマイクロ波電力を効率良く反応ガス
に吸収させることはいうまでもない。 Now, with such an apparatus of the present invention, the workpiece 11
3, the object to be processed 113 is placed on the mounting table 11.
4, the exhaust device 116 is operated to evacuate the inside of the vacuum container 111 to a degree of vacuum of 10 -1 Torr or less.
Thereafter, the reactive gas to be activated is fed from the gas supply source 110, and the flow rate control valve 109 is adjusted to create a vacuum of 10 to
Set to 10 -1 Torr. Thus the microwave oscillator 1
01 to generate microwave power, isolator 102, power monitor 103, matching box 1
04, it is transmitted to the feeding waveguide 107 through the corner 105 to activate the reaction gas in the feeding waveguide 107. The activated reaction gas is removed from the exhaust device 116.
It is sucked in the direction, and on the way, it hits the object to be processed 113 and the intended processing is performed. In addition, matching box 10
Needless to say, the microwave power can be efficiently absorbed into the reaction gas by adjusting the step 4.
以上のような本発明の装置を使用すれば、高価
で破損しやすい石英材などを使用することなく反
応ガスを活性化することが出来ると共に、導波管
自体がプラズマ領域を構成するので活性化体積が
大きく、大量の活性化ガスが得られ処理面積の大
きいものの処理に適応できる。そしてガスはマイ
クロ波の伝送方向に沿つて流れるので高電界領域
を確実に通ることとなり、ガス活性化が一層確実
であると共に電波漏洩がない利点を有する。そし
てガス供給管は導波管のE面から挿入すれば導波
管内のマイクロ波伝幡に何ら悪影響を与えない。
また供給管は導波管の中央で開口すればTE01モ
ードの場合、電界最大の位置にガスが放出される
ので確実に励起される利点もある。 By using the device of the present invention as described above, it is possible to activate the reactive gas without using expensive and easily damaged quartz materials, and since the waveguide itself constitutes the plasma region, it is possible to activate the reactive gas. It has a large volume and can obtain a large amount of activated gas, making it suitable for processing large processing areas. Since the gas flows along the direction of microwave transmission, it reliably passes through the high electric field region, which has the advantage of more reliable gas activation and no leakage of radio waves. If the gas supply pipe is inserted from the E side of the waveguide, it will not have any adverse effect on the microwave propagation within the waveguide.
In addition, if the supply pipe is opened at the center of the waveguide, in the case of TE 01 mode, the gas is emitted at the position where the electric field is maximum, which has the advantage of ensuring reliable excitation.
なお、給電導波管の先端部形状及び寸法を第4
図のようにマイクロ波使用波長の1/2又はそれ以
下になるようにH面107bの幅寸法aをテーパ
状に細くして電界を上げることにより効果的に反
応ガスにマイクロ波電力を吸収させても良い。こ
れによつて先端部はカツトオフとなり容器内は無
電界となる。なお、この場合、給電導波管107
aの壁を水、高圧空気などで冷却することが望ま
しい。 Note that the shape and dimensions of the tip of the feeding waveguide are
As shown in the figure, the width a of the H surface 107b is tapered to be 1/2 or less than the wavelength used for the microwave, and the electric field is increased to effectively absorb the microwave power into the reaction gas. It's okay. As a result, the tip is cut off and there is no electric field inside the container. Note that in this case, the feeding waveguide 107
It is desirable to cool the walls of a with water, high pressure air, etc.
ガス供給管108は導波管のH面107b中央
から挿入してもよく、この場合はガス供給管を誘
電体で形成することが必要である。 The gas supply pipe 108 may be inserted from the center of the H-plane 107b of the waveguide, and in this case, it is necessary to form the gas supply pipe from a dielectric material.
第1図は従来例を示す横断面略図、第2図は本
発明の一実施例を示す横断面略図、第3図は給電
導波管の断面図、第4図は本発明の他の実施例を
示す要部断面図である。
10……マイクロ波発振器、106……気密
板、107……給電導波管、111……真空容
器、113……被処理物、116……排気装置、
110……ガス供給源。
FIG. 1 is a schematic cross-sectional view showing a conventional example, FIG. 2 is a schematic cross-sectional view showing an embodiment of the present invention, FIG. 3 is a cross-sectional view of a feeding waveguide, and FIG. 4 is a schematic cross-sectional view showing an embodiment of the present invention. FIG. 3 is a sectional view of a main part showing an example. 10... Microwave oscillator, 106... Airtight plate, 107... Power supply waveguide, 111... Vacuum container, 113... Processing object, 116... Exhaust device,
110...Gas supply source.
Claims (1)
が減圧可能に排気装置が連設されている真空容器
と、前記発振源からマイクロ波電力が導入され終
端部が前記真空容器に連通して設けられた給電導
波管と、前記給電導波管内に供給される反応ガス
と前記マイクロ波電力によりプラズマを発生する
よう前記反応ガスを供給するガス供給管と、前記
ガス供給管から導波管内に反応ガスを供給する位
置と前記マイクロ波発振源との間にマイクロ波電
力を供給するが前記反応ガスを気密に分離する手
段とを具備することを特徴とする活性化ガス発生
装置。1. A microwave oscillation source, a vacuum container that accommodates the object to be processed and is connected with an evacuation device so that the inside can be depressurized, and a microwave power is introduced from the oscillation source and a terminal end communicates with the vacuum container. a gas supply pipe that supplies the reaction gas so that plasma is generated by the reaction gas supplied into the power supply waveguide and the microwave power; 1. An activated gas generation device comprising means for supplying microwave power between a position for supplying a reactive gas and the microwave oscillation source and for airtightly separating the reactive gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1489678A JPS54107875A (en) | 1978-02-14 | 1978-02-14 | Producing apparatus for activated gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1489678A JPS54107875A (en) | 1978-02-14 | 1978-02-14 | Producing apparatus for activated gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54107875A JPS54107875A (en) | 1979-08-24 |
| JPS6222652B2 true JPS6222652B2 (en) | 1987-05-19 |
Family
ID=11873748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1489678A Granted JPS54107875A (en) | 1978-02-14 | 1978-02-14 | Producing apparatus for activated gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54107875A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63140513U (en) * | 1987-03-06 | 1988-09-16 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49111873A (en) * | 1973-02-28 | 1974-10-24 | ||
| JPS5344795B2 (en) * | 1974-12-18 | 1978-12-01 | ||
| JPS52135878A (en) * | 1976-05-10 | 1977-11-14 | Agency Of Ind Science & Technol | Plasma reaction apparatus |
-
1978
- 1978-02-14 JP JP1489678A patent/JPS54107875A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63140513U (en) * | 1987-03-06 | 1988-09-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54107875A (en) | 1979-08-24 |
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