JPS6223463B2 - - Google Patents
Info
- Publication number
- JPS6223463B2 JPS6223463B2 JP13424578A JP13424578A JPS6223463B2 JP S6223463 B2 JPS6223463 B2 JP S6223463B2 JP 13424578 A JP13424578 A JP 13424578A JP 13424578 A JP13424578 A JP 13424578A JP S6223463 B2 JPS6223463 B2 JP S6223463B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- cooling plate
- lid
- electrode
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 claims description 40
- 238000001816 cooling Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 239000008188 pellet Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は電力用半導体装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a power semiconductor device.
産業用電源装置或いは車輌用整流器等に使用さ
れる電力用半導体装置は、信頼性及び安全率の高
い設計が要求され、そのため従来の電力用半導体
装置は、例えば第1図に示すように半導体素子1
をいわゆる銅スタツド2上に固着し、ガラスシー
ルしたハウジング3で気密に封止したいわゆるス
タツド型のものが用いられていた。この場合、素
子1のカソード電極4、ゲートリード5等をガラ
ス封止部6を貫通させて引出し、それぞれ端子
7,8に導通させるため、端子7,8及び配線な
どで装置上に多くの場所を占め、従つて該装置を
例えばフオークリフトや電気自動車等に取付ける
場合、他の装置の装着上邪魔になることがあつ
た。また装置上に端子7,8が隣接して設けられ
るため、ごみ等が付着して短絡事故の原因になる
ことがあつた。 Power semiconductor devices used in industrial power supplies, vehicle rectifiers, etc. are required to have a design with high reliability and a high safety factor.For this reason, conventional power semiconductor devices are designed with semiconductor elements as shown in Figure 1, for example. 1
A so-called stud type was used, in which a so-called copper stud 2 was fixed onto a so-called copper stud 2 and hermetically sealed with a glass-sealed housing 3. In this case, the cathode electrode 4, gate lead 5, etc. of the element 1 are drawn out through the glass sealing part 6 and are electrically connected to the terminals 7 and 8, respectively. Therefore, when this device is attached to a forklift, an electric vehicle, etc., it sometimes becomes an obstacle to the attachment of other devices. Furthermore, since the terminals 7 and 8 are provided adjacent to each other on the device, dust and the like may adhere to the device, causing a short circuit accident.
第2図は従来の他の電力用半導体装置を示し、
これは半導体素子(ペレツト)1をスタツド2上
に圧接する圧接スタツド型のものである。即ちペ
レツト1はカソード電極11の下端平板部、絶縁
板12、及びワツシヤ13を介して積層された複
数個の皿状バネ体14で押圧されている。このバ
ネ体の押圧は、スタツド2に固定された囲い体1
5を貫通するピン16により行なわれる。この場
合の問題は第1図場合の問題以外に、ピン16の
位置が固定される構造であるため、バネ体14の
たわみ量がカソード電極11、絶縁板12、ワツ
シヤ13、バネ体14等の厚みの寸法工差で異な
り、ペレツト1を一定圧力で押圧することが困難
であつた。このためペレツト1とカソード電極1
1及びスタツド(アノード電極)2との間の接触
熱抵抗の値が、各製品毎に異なつてしまい、その
値のバラツキが大きいため、歩留が低下するとい
う問題があつた。第6図はバネ体14のたわみ量
lに対する熱抵抗Rth及び圧接力Fの関係を示す
特性図である。この図を見れば、たわみ量が△l
変動すると、圧接力は△F変動し、それに伴ない
熱抵抗は△Rth変動する。たわみ量が大きく圧接
力が大きければ熱抵抗は低下するが、圧接力の推
奨値には上限があるため、熱抵抗を規格値に入れ
るためには、たわみ量の誤差を△l0に抑制するこ
とが必要なことが分る。 FIG. 2 shows another conventional power semiconductor device,
This is a pressure stud type in which a semiconductor element (pellet) 1 is pressed onto a stud 2. That is, the pellet 1 is pressed by a plurality of disc-shaped spring bodies 14 which are laminated via the lower end flat plate portion of the cathode electrode 11, an insulating plate 12, and a washer 13. The pressure of this spring body is applied to the enclosure 1 fixed to the stud 2.
This is done by a pin 16 passing through 5. The problem in this case is that in addition to the problem in FIG. Due to the difference in thickness, it was difficult to press the pellet 1 with a constant pressure. Therefore, pellet 1 and cathode electrode 1
The value of the contact thermal resistance between the electrode 1 and the stud (anode electrode) 2 differs for each product, and the large dispersion of the value causes a problem in that the yield decreases. FIG. 6 is a characteristic diagram showing the relationship between the thermal resistance R th and the pressing force F with respect to the deflection amount l of the spring body 14. If you look at this diagram, the amount of deflection is △l
When it fluctuates, the pressure welding force fluctuates by ΔF, and the thermal resistance accordingly fluctuates by ΔRth. Thermal resistance will decrease if the amount of deflection is large and the pressure welding force is large, but there is an upper limit to the recommended value of pressure welding force, so in order to keep the thermal resistance within the standard value, the error in the amount of deflection must be suppressed to △l 0 . I understand that this is necessary.
本発明は上記実情に鑑みてなされたもので、半
導体素子(ペレツト)を収容する絶縁体の上下面
に導電性冷却体及び蓋体を平行に配置し、前記絶
縁体の側部或いは該絶縁体の中空部を蓋する蓋体
の側部から前記ペレツトの電極を取り出すことに
より、取り付けスペース上の問題及び電極間の短
絡事故等の問題を改善し、更にペレツトを冷却体
に押圧する構成としても従来装置で生じた問題点
を改善し得る電力用半導体装置を提供しようとす
るものである。 The present invention has been made in view of the above circumstances, and includes a conductive cooling body and a lid disposed in parallel on the upper and lower surfaces of an insulator housing a semiconductor element (pellet), and By taking out the electrode of the pellet from the side of the lid that covers the hollow part, problems such as installation space and short circuit accidents between the electrodes can be improved, and it can also be configured to press the pellet against the cooling body. The present invention aims to provide a power semiconductor device that can improve the problems that have arisen with conventional devices.
以下図面を参照して本発明の一実施例を説明す
る。第3図において21はアルミニウム、銅等よ
りなる導電性冷却板であり、この冷却板21上の
一部を占める個所には、上下面が平行のベーク、
エポキシ等よりなる硬質性環状絶縁体22が配置
されている。この絶縁体22の中空部23内の冷
却板21上にはタングステン等よりなる導電体2
4が配置され、この導電体24上にペレツト(例
えば半導体整流素子)25がそのアノード側を下
にした配置されている。このペレツト25上に設
けられたアルミニウム等のカソード電極26上に
はモリブデン等よりなる導電体27が、更にその
上に銅等よりなる導電体28が配置されている。
この導電体28は下部が逆台形で、中心部上方に
柱状の突出部を形成したものである。上記絶縁体
22は、これと冷却板21間に配置されたテフロ
ン、シリコーンゴム等よりなる弾性絶縁物(パツ
キング)29の介在により、冷却板21とは離間
している。また絶縁体22の側壁には孔30が設
けられ、この孔30には銅等よりなるカソード用
の導出電極31が遊挿されている。この電極31
は電極28上に位置する部分が平板状になつてお
り、その部分を前記電極28の突出部が貫通して
いる。電極31の平板部31a上には、電極28
の突出部28aを囲う筒状部32aを有した絶縁
板32が配置され、この絶縁板32上には平ワツ
シヤ34を介して皿状のバネ体331,332、
及び333,334が配置されている。バネ体3
31〜333はその中心部に突出部28a、筒状
部32aを通す貫通孔を有する。絶縁体22上に
は、その中空部23を蓋する金属(絶縁体でも
可)製蓋体35が配置される。この蓋体35は、
これと絶縁体22間に配置されたテフロン、シリ
コーンゴム等よりなる弾性絶縁物(パツキング)
36の介在により、絶縁体22とは離間してい
る。冷却板21、絶縁体22、蓋体35は、これ
らを貫通する孔が設けられ、これに挿通されるボ
ルト37、ナツト38により押圧固定されてい
る。ここで蓋体35によりバネ体331〜334
を冷却板21側へ押圧するため、ペレツト25に
押圧力を加えることができる。ボルト37、ナツ
ト38はこれらの頭部が外方へ突出しないよう
に、冷却板21、蓋体35に凹部39,40が設
けられ、この凹部39には、冷却板21と蓋体3
5間を絶縁するため絶縁体41が介挿されてい
る。前記導出電極31の外側面には、L字形のカ
ソード外部電極42がネジ43で固定されてい
る。この外部電極42は図示されないネジ等によ
り、絶縁体22に固定され、また絶縁体21と外
部電極42間には弾性絶縁体(パツキング)44
が介在され、この間の気密性を保持している。 An embodiment of the present invention will be described below with reference to the drawings. In FIG. 3, reference numeral 21 denotes a conductive cooling plate made of aluminum, copper, etc., and a part of the cooling plate 21 has a baking plate whose upper and lower surfaces are parallel to each other.
A rigid annular insulator 22 made of epoxy or the like is arranged. A conductor 2 made of tungsten or the like is placed on the cooling plate 21 in the hollow part 23 of this insulator 22.
A pellet (for example, a semiconductor rectifying element) 25 is placed on the conductor 24 with its anode side facing down. A conductor 27 made of molybdenum or the like is placed on a cathode electrode 26 made of aluminum or the like provided on the pellet 25, and a conductor 28 made of copper or the like is further placed thereon.
The conductor 28 has an inverted trapezoidal lower part and a columnar protrusion above the center. The insulator 22 is separated from the cooling plate 21 by an elastic insulator (packing) 29 made of Teflon, silicone rubber, etc., which is placed between the insulator 22 and the cooling plate 21. A hole 30 is provided in the side wall of the insulator 22, and a cathode lead electrode 31 made of copper or the like is loosely inserted into the hole 30. This electrode 31
The portion located above the electrode 28 has a flat plate shape, and the protruding portion of the electrode 28 passes through that portion. On the flat plate portion 31a of the electrode 31, the electrode 28
An insulating plate 32 having a cylindrical part 32a surrounding the protruding part 28a is arranged, and plate-shaped spring bodies 33 1 , 33 2 ,
and 33 3 and 33 4 are arranged. Spring body 3
3 1 to 33 3 have a protruding portion 28a and a through hole through which the cylindrical portion 32a passes at the center thereof. A lid 35 made of metal (or an insulator may be used) that covers the hollow portion 23 is placed on the insulator 22 . This lid body 35 is
An elastic insulator (packing) made of Teflon, silicone rubber, etc. placed between this and the insulator 22
36, it is separated from the insulator 22. The cooling plate 21, the insulator 22, and the lid 35 are provided with holes passing through them, and are pressed and fixed by bolts 37 and nuts 38 inserted through the holes. Here, the lid body 35 connects the spring bodies 33 1 to 33 4
In order to press the pellets 25 toward the cooling plate 21, a pressing force can be applied to the pellets 25. In order to prevent the heads of the bolts 37 and nuts 38 from protruding outward, recesses 39 and 40 are provided in the cooling plate 21 and the lid 35.
An insulator 41 is inserted to insulate between the two. An L-shaped cathode external electrode 42 is fixed to the outer surface of the lead-out electrode 31 with a screw 43. This external electrode 42 is fixed to the insulator 22 with screws (not shown), and an elastic insulator (packing) 44 is provided between the insulator 21 and the external electrode 42.
is interposed to maintain airtightness between the two.
上記の如く構成された半導体装置にあつては、
蓋体35及び冷却板21を平行に配置し、電極4
2を側方に配置したため、装置の上下部に空間的
余裕ができるし、また絶縁体22を冷却板21の
端部側に設け、端部側に電極42を設けたため、
冷却板21の中側にも空間的余裕ができ、その有
効活用が可能となる。また電極42をごみ等がた
まりにくい側方に設けたため、電極の短絡事故を
防止できる。また弾性絶縁物29,36の介在で
絶縁体22と冷却体21間に空間45が、また絶
縁体22と蓋体35間に空間46が設けられた構
成であるため、組立て時に冷却板21、蓋体35
を介してバネ体331〜334を所定圧力で押圧
でき、このため該バネ体のたわみ量が一定化で
き、ペレツト25を押圧できる。従つて従来問題
とされた接触熱抵抗のばらつき等による歩留低下
を防止できる。また電極31は孔30内に遊挿さ
れているため、この部分で絶縁体22内の各部品
の工差を吸収することもできる。 In the semiconductor device configured as above,
The lid body 35 and the cooling plate 21 are arranged in parallel, and the electrode 4
2 is placed on the side, there is space at the top and bottom of the device, and since the insulator 22 is provided on the end side of the cooling plate 21 and the electrode 42 is provided on the end side,
There is also a space inside the cooling plate 21, which can be used effectively. Further, since the electrodes 42 are provided on the sides where dust and the like are less likely to accumulate, it is possible to prevent short-circuit accidents of the electrodes. In addition, since the configuration has a space 45 between the insulator 22 and the cooling body 21 and a space 46 between the insulator 22 and the lid 35 through the interposition of the elastic insulators 29 and 36, the cooling plate 21, Lid body 35
The spring bodies 33 1 to 33 4 can be pressed with a predetermined pressure through the spring bodies 33 1 to 33 4 , so that the amount of deflection of the spring bodies can be made constant and the pellet 25 can be pressed. Therefore, it is possible to prevent a decrease in yield due to variation in contact thermal resistance, which has been a problem in the past. Further, since the electrode 31 is loosely inserted into the hole 30, this portion can also absorb the manufacturing difference of each component within the insulator 22.
第9図は図示の如くバネ体を2並列3直列配置
とした場合のバネ体たわみ量とペレツト側への荷
重の関係を示す特性図、第10図は25φのペレツ
トへの荷重とペレツトの放熱系路の熱抵抗Rthと
の関係を示す特性図である。しかしてペレツトの
推奨荷重の下限は熱抵抗Rthの規格値により制限
され、上限はペレツト側への機械的強度で制限さ
れる。従つて皿状バネ体のたわみ量もペレツト荷
重に対応して上限及び下限を抑制する必要がある
が、たわみ量の許容幅は約0.6mmである。一方、
皿状バネ体の厚みの寸法誤差は、第9図の例では
±0.6mmあるため、バネ体を一定の厚みで押え込
んだ場合は、たわみ量を許容幅0.6mmに抑制する
ことは困難である。これに対し第3図の構成で
は、空間45,46による誤差吸収用空間が与え
られているため、ペレツト25側に推奨荷重を与
えた状態でボルト37とナツト38を締め付け固
定することができ、従つて第3図の構成では、熱
抵抗Rth及びペレツト等に対する機械的強度を良
好に保持できるものである。 Figure 9 is a characteristic diagram showing the relationship between the amount of deflection of the spring body and the load on the pellet side when the spring bodies are arranged in two parallel and three series as shown in the figure, and Figure 10 is the load on the 25φ pellet and the heat dissipation of the pellet. It is a characteristic diagram which shows the relationship with thermal resistance Rth of a system. Therefore, the lower limit of the recommended load on the pellet is limited by the standard value of thermal resistance Rth , and the upper limit is limited by the mechanical strength of the pellet side. Therefore, it is necessary to suppress the upper and lower limits of the amount of deflection of the disc-shaped spring body in accordance with the pellet load, but the allowable range of the amount of deflection is approximately 0.6 mm. on the other hand,
The dimensional error in the thickness of the dish-shaped spring body is ±0.6 mm in the example shown in Figure 9, so if the spring body is held down to a constant thickness, it is difficult to suppress the amount of deflection to the allowable width of 0.6 mm. be. On the other hand, in the configuration shown in FIG. 3, since the spaces 45 and 46 provide a space for error absorption, the bolt 37 and nut 38 can be tightened and fixed while applying the recommended load to the pellet 25 side. Therefore, the configuration shown in FIG. 3 can maintain good thermal resistance Rth and mechanical strength against pellets and the like.
第4図は、第3図の構成で得られる効果(スペ
ース有効利用)をフルに活用し、チヨツパ回路装
置を構成したもので、第5図はその等価回路であ
る。これらの図を見れば、回路の電極を側方から
取出して各素子を冷却板21上に高密度に配置
し、また装置の上下面には電極配線を設ける必要
がないから、その有効性が理解できる。なお本構
成において第3図と対応するものには同一符号を
用い、かつ適宜添字を付して説明を省略する。 FIG. 4 shows a configuration of a chopper circuit device that takes full advantage of the effect (effective use of space) obtained with the configuration of FIG. 3, and FIG. 5 shows its equivalent circuit. If you look at these figures, you can see that the electrodes of the circuit are taken out from the side and each element is arranged in high density on the cooling plate 21, and there is no need to provide electrode wiring on the upper and lower surfaces of the device, so the effectiveness is confirmed. It can be understood. In this configuration, the same reference numerals are used for parts corresponding to those in FIG. 3, appropriate subscripts are added, and explanations are omitted.
第7図は本発明の他の実施例である。この構成
での特徴は、筒状バネ体51を絶縁体22に貫通
させ、バネ体51をナツト52で固定し、バネ体
51内にゲート電極53を挿通したものである。
この場合、バネ体51と電極リード53間の気密
性については適宜の手段が構ぜられることは勿論
である。またこの場合には、カソード外部取出し
電極42′を蓋体35側から取出している。ここ
ではカソード電極28の突出部28aはバネ体3
34の中心部を貫通し、蓋体35に設けられた凹
部54の底部に露出している。この凹部54内に
は側方から電極42′が導入され、ネジ55で電
極28aに固定されている。電極42と蓋体35
間にはパツキング56が介在され、気密性を保持
している。 FIG. 7 shows another embodiment of the invention. The feature of this configuration is that the cylindrical spring body 51 is passed through the insulator 22, the spring body 51 is fixed with a nut 52, and the gate electrode 53 is inserted into the spring body 51.
In this case, it goes without saying that appropriate measures can be taken to ensure airtightness between the spring body 51 and the electrode lead 53. Further, in this case, the cathode externally-extracted electrode 42' is taken out from the lid 35 side. Here, the protrusion 28a of the cathode electrode 28 is connected to the spring body 3.
3 4 and is exposed at the bottom of a recess 54 provided in the lid 35 . The electrode 42' is introduced from the side into the recess 54 and is fixed to the electrode 28a with a screw 55. Electrode 42 and lid body 35
A packing 56 is interposed in between to maintain airtightness.
第8図は本発明の更に他の実施例であり、冷却
板21と蓋体35間の絶縁体22に複数個の中空
部231〜233を設け、それぞれについて第3
図の構成を実現したものである。その他について
は第3図と対応するので、対応する個所には同一
符号を用い、かつ適宜添字を付して説明を省略す
る。 FIG. 8 shows still another embodiment of the present invention, in which a plurality of hollow portions 23 1 to 23 3 are provided in the insulator 22 between the cooling plate 21 and the lid 35, and a third
This is a realization of the configuration shown in the figure. Since the other parts correspond to those in FIG. 3, the same reference numerals are used for corresponding parts, appropriate subscripts are added, and explanations are omitted.
なお本発明は上記実施例に限定されるものでは
なく、例えば、バネ体331〜334のたわみ量
を一定化するために設けた空間45,46は、い
ずれか一方のみでもよい。また冷却体21と蓋体
35間を押圧する押圧手段として、これらの間を
挿通するボルト37を用いたが、例えば挿通させ
ずに途中まで切つたタツプにねじ体をねじ込むよ
うにしたり、または枠状の締付体で外側から冷却
体21、蓋体35間を締付けるようにしてもよ
い。 Note that the present invention is not limited to the above-mentioned embodiment, and for example, only one of the spaces 45 and 46 may be provided to make the amount of deflection of the spring bodies 33 1 to 33 4 constant. Further, as a pressing means for pressing between the cooling body 21 and the lid body 35, a bolt 37 that is inserted between them is used, but for example, the screw body may be screwed into a tap that is cut halfway instead of being inserted, or the screw body may be screwed into a tap that is cut halfway, or The cooling body 21 and the lid 35 may be tightened from the outside using a shaped tightening body.
以上説明した如く本発明によれば、スペースの
有効利用が可能で、短絡事故等も防止でき、また
素子に対する押圧力も一定化できる等の利点を有
するため、極めて実用的な電力用半導体装置が提
供できるものである。 As explained above, according to the present invention, space can be used effectively, short-circuit accidents can be prevented, and the pressing force on the elements can be made constant, so that an extremely practical power semiconductor device can be realized. This is something that can be provided.
第1図、第2図は従来装置の断面図、第3図は
本発明の一実施例の構成を示す断面図、第4図は
同構成を適用したチヨツパ回路装置の斜視図、第
5図は同装置の等価回路図、第6図はバネ体のた
わみ量に対する熱抵抗、圧接力の関係を示す特性
図、第7図、第8図は本発明の異なる実施例の断
面図、第9図、第10図は第6図を更に具体化し
た特性図である。
21……冷却体、22……絶縁体、23……中
空部、25……半導体素子、29,36……弾性
絶縁物、31……導出電極、331〜334……
バネ体、35……蓋体、37……ボルト、38…
…ナツト、42……外部電極、45,46……空
間。
1 and 2 are sectional views of a conventional device, FIG. 3 is a sectional view showing the configuration of an embodiment of the present invention, FIG. 4 is a perspective view of a chopper circuit device to which the same configuration is applied, and FIG. 5 is an equivalent circuit diagram of the same device, FIG. 6 is a characteristic diagram showing the relationship between thermal resistance and pressure contact force with respect to the amount of deflection of the spring body, FIGS. 7 and 8 are cross-sectional views of different embodiments of the present invention, and FIG. FIG. 10 is a characteristic diagram that further embodies FIG. 6. 21...Cooling body, 22...Insulator, 23...Hollow part, 25...Semiconductor element, 29, 36...Elastic insulator, 31...Leading electrode, 33 1 to 33 4 ...
Spring body, 35... Lid body, 37... Bolt, 38...
... Nut, 42... External electrode, 45, 46... Space.
Claims (1)
を占める個所に配置された環状の絶縁体と、この
絶縁体の中空部内で前記冷却板上に配置される半
導体素子と、この半導体素子上に配置され該半導
体素子の電極に接続される導電体と、前記絶縁体
の中空部内で前記導電体上に配置される皿状バネ
体と、前記冷却板と平行に配置され前記環状の絶
縁体の開口部をおおう蓋体と、この蓋体と前記絶
縁体との間に配置される第1の封止用弾性絶縁物
と、前記環状の絶縁体と前記冷却板との間に配置
される第2の封止用弾性絶縁物と、前記皿状バネ
体を半導体素子側に押圧すると共に前記第1、第
2の封止用弾性絶縁物を押圧するように前記蓋体
と冷却板を押圧しかつ前記冷却板、蓋体、環状の
絶縁物を一体化する押圧手段と、前記導電体と接
続され前記環状の絶縁体或いは蓋体の側部から導
出される導出電極とを具備し、前記蓋体と環状の
絶縁体、及び前記環状の絶縁体と前記冷却板の少
くとも一方に前記封止用弾性絶縁物の介在により
空間を形成することを特徴とする電力用半導体装
置。1. A conductive cooling plate, an annular insulator disposed in a portion occupying a part of one main surface of the cooling plate, a semiconductor element disposed on the cooling plate within a hollow part of the insulator, and a conductor disposed on a semiconductor element and connected to an electrode of the semiconductor element; a dish-shaped spring body disposed on the conductor within a hollow part of the insulator; and a disk-shaped spring body disposed in parallel with the cooling plate a lid covering the opening of the insulator, a first sealing elastic insulator disposed between the lid and the insulator, and a space between the annular insulator and the cooling plate. A second elastic insulator for sealing is arranged, and the cover body and the cooling member are pressed so as to press the dish-shaped spring body toward the semiconductor element side and press the first and second elastic insulators for sealing. A pressing means for pressing the plate and integrating the cooling plate, the lid, and the annular insulator, and a lead-out electrode connected to the conductor and led out from the side of the annular insulator or the lid. A power semiconductor device characterized in that a space is formed between the lid body and the annular insulator, and at least one of the annular insulator and the cooling plate through the interposition of the sealing elastic insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13424578A JPS5561047A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device for electric power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13424578A JPS5561047A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device for electric power |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5561047A JPS5561047A (en) | 1980-05-08 |
| JPS6223463B2 true JPS6223463B2 (en) | 1987-05-22 |
Family
ID=15123782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13424578A Granted JPS5561047A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device for electric power |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5561047A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181006B1 (en) * | 1998-05-28 | 2001-01-30 | Ericsson Inc. | Thermally conductive mounting arrangement for securing an integrated circuit package to a heat sink |
-
1978
- 1978-10-31 JP JP13424578A patent/JPS5561047A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5561047A (en) | 1980-05-08 |
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