JPS622700B2 - - Google Patents
Info
- Publication number
- JPS622700B2 JPS622700B2 JP55019996A JP1999680A JPS622700B2 JP S622700 B2 JPS622700 B2 JP S622700B2 JP 55019996 A JP55019996 A JP 55019996A JP 1999680 A JP1999680 A JP 1999680A JP S622700 B2 JPS622700 B2 JP S622700B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- plasma
- high voltage
- deflection plate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は放電プラズマX線発生装置に係り、特
に照射面へのプラズマイオン、中性原子の衝撃、
付着ならびに電子の衝撃の防止あるいは減少させ
る装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a discharge plasma
The present invention relates to devices for preventing or reducing adhesion and electron bombardment.
最近放電プラズマX線発生装置をX線源として
使用し、発生する大気などに比較的吸収され易い
軟X線を用いて、微細なマスクパターンをウエー
ハに投影転写することが開発されている。 Recently, it has been developed to use a discharge plasma X-ray generator as an X-ray source to project and transfer a fine mask pattern onto a wafer using soft X-rays that are relatively easily absorbed by the generated atmosphere.
第1図に放電プラズマX線発生装置の概念図を
示す。 FIG. 1 shows a conceptual diagram of a discharge plasma X-ray generator.
図において、スイツチ1を閉じ、スイツチ2を
開にした状態で、負の高電圧を−HV点に印加す
ると、抵抗R1を通してコンデンサC1,C2に
電気的エネルギが蓄積される。そのエネルギが所
定値に達した後、スイツチ1を開にして、スイツ
チ2を閉じると、コンデンサC1に蓄えられたエ
ネルギ(電荷)が第1電極3、第2電極4間での
放電という形で消費される。この時インシユレー
タ5の材料(ポリエチレン等)が蒸発し、プラズ
マ状態Pになる。この放電による第1電極3およ
びカソード6の電位の変化、またプラズマの発生
による電界分布の変化などにより、次にコンデン
サC2に蓄えられた電荷の放電をカソード6より
発生する。これが電子ビームとなりプラズマとの
カツプリングを引き起す。このカツプリングによ
りプラズマイオンのエネルギが上昇し、かつプラ
ズマ密度も上昇し、その結果として赤外光、紫外
光に加えX線の放出となる。 In the figure, when a negative high voltage is applied to the -HV point with switch 1 closed and switch 2 open, electrical energy is stored in capacitors C1 and C2 through resistor R1. After the energy reaches a predetermined value, when switch 1 is opened and switch 2 is closed, the energy (charge) stored in the capacitor C1 is discharged between the first electrode 3 and the second electrode 4. consumed. At this time, the material of the insulator 5 (polyethylene, etc.) evaporates, and a plasma state P is achieved. Due to changes in the potentials of the first electrode 3 and cathode 6 due to this discharge, changes in electric field distribution due to plasma generation, etc., a discharge of the charge stored in the capacitor C2 is then generated from the cathode 6. This becomes an electron beam and causes coupling with plasma. This coupling increases the energy of the plasma ions and also increases the plasma density, resulting in the emission of X-rays in addition to infrared and ultraviolet light.
第2図は第1図の放電プラズマX線発生装置を
X線源として使用したX線転写装置の構成を示
す。 FIG. 2 shows the configuration of an X-ray transfer device using the discharge plasma X-ray generator shown in FIG. 1 as an X-ray source.
図において、基板7上にX線感光レジスト8を
塗布した試料aとX線源9との間にX線の透過性
の高い支持体10、X線の透過性の低い吸収体1
1及び支持体10を支持する支持枠12から成る
X線マスクbを配置する。X線をマスクb上に照
射すると、吸収体11のない部分を透過したX線
によりX線レジスト8に吸収体11パターンの潜
像が形成される。これがX線露光であり、この後
レジストに対して現像処理を施すことにより基板
7上にレジストパターンが形成される。 In the figure, a support 10 with high X-ray transmittance and an absorber 1 with low X-ray transmittance are placed between sample a, which has an X-ray photoresist 8 coated on a substrate 7, and an X-ray source 9.
1 and a support frame 12 that supports a support body 10 is arranged. When the mask b is irradiated with X-rays, a latent image of the pattern of the absorber 11 is formed on the X-ray resist 8 by the X-rays transmitted through the portion where the absorber 11 is not present. This is X-ray exposure, and a resist pattern is then formed on the substrate 7 by developing the resist.
上記X線照射において、使用されるX線源9よ
りはプラズマ物質であるイオン、電子、中性原子
及び電子ビームが放出されており、マスク露光の
場合に何度もマスクbを使用していると、マスク
b表面にそれら物質が積り、マスクbのX線透過
率を悪くしている。そのため従来より高分子材料
からなるX線透過薄膜CをX線照射面(マスク
b)とX線源9の間に配置しているものがある。
ところがこの薄膜CはX線を通すとは言え透過率
100%のものはなく、実際の透過率は数十%位で
あるので、X線の強度が小さくなる。又薄膜Cを
そのままにして、何度も露光作業していると、上
述したマスクと同様にプラズマ物質が付着し、照
射面でのX線量の減衰という欠点がある。 In the above X-ray irradiation, the X-ray source 9 used emits plasma substances such as ions, electrons, neutral atoms, and electron beams, and the mask b is used many times in the case of mask exposure. As a result, these substances accumulate on the surface of mask b, impairing the X-ray transmittance of mask b. For this reason, some devices have conventionally placed an X-ray transparent thin film C made of a polymeric material between the X-ray irradiation surface (mask b) and the X-ray source 9.
However, although this thin film C allows X-rays to pass through, its transmittance is low.
There is no such thing as 100%, and the actual transmittance is around several tens of percent, so the intensity of the X-rays is low. Furthermore, if the thin film C is left as it is and exposed many times, plasma substances will adhere to it, similar to the above-mentioned mask, resulting in a disadvantage of attenuation of the X-ray dose on the irradiated surface.
本発明の目的はX線源と照射面間にX線透過率
を低下せしめるような物を置くことなく、プラズ
マ物質の照射面への衝撃,付着を防止、あるいは
減少させる装置を提供するにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus that prevents or reduces the impact and adhesion of plasma material to an irradiation surface without placing anything between the X-ray source and the irradiation surface that would reduce the X-ray transmittance. .
本発明の特徴はX線発生装置と、該X線発生装
置とX線照射面との間に、高周波の高電圧を導入
すると電極と高電圧を印加する偏向板又は磁界に
よる偏向器を備え、該高周波の高電圧を導入する
電極によりプラズマ中にある中性原子をイオン化
し、一方高電圧を印加する偏向板又は磁界による
偏向器により前記イオン化された原子及びプラズ
マからのイオン、電子を前記照射面から外れた位
置へ向わせるようにして上述の目的を達してい
る。 The features of the present invention include an X-ray generator, and a deflection plate or magnetic field deflector that applies an electrode and high voltage when a high-frequency high voltage is introduced between the X-ray generator and the X-ray irradiation surface, Neutral atoms in the plasma are ionized by the electrode that introduces the high frequency and high voltage, and the ionized atoms and ions and electrons from the plasma are irradiated with the ionized atoms and the ions and electrons from the plasma using a deflection plate or a magnetic field deflector that applies the high voltage. The above objective is achieved by directing it out of the plane.
以下、本発明について、実施例により説明する
と、第3図は本発明によるX線転写装置に適用し
た偏向板による荷電粒子の進路を変更する1実施
例を示したものである。 Hereinafter, the present invention will be described with reference to an embodiment. FIG. 3 shows an embodiment in which the course of charged particles is changed by a deflection plate applied to an X-ray transfer apparatus according to the present invention.
図において、X線源9と照射面(マスクb)の
間に偏向板13を設け、さらにマスクbの外周囲
にトラツプ14を設けている。 In the figure, a deflection plate 13 is provided between the X-ray source 9 and the irradiation surface (mask b), and a trap 14 is further provided around the outer periphery of the mask b.
X線源9より放出される放電プラズマX線には
プラズマ物質であるイオン、電子、中性原子及び
電子ビームが線源から放出されている。これらイ
オン、電子を偏向板13により光軸と垂直方向の
運動エネルギを与えてそれら粒子の進路を曲げて
マスクb面に向わせずにトラツプ14に向ける。 The discharge plasma X-rays emitted from the X-ray source 9 include plasma substances such as ions, electrons, neutral atoms, and electron beams emitted from the source. These ions and electrons are given kinetic energy in a direction perpendicular to the optical axis by a deflection plate 13 to bend the course of these particles and direct them toward the trap 14 instead of toward the mask surface b.
しかし中性原子は電荷を持つていないため、偏
向板13は作用しないので、そこで第4図に示す
ように高周波導入電極15を偏向板13と共に設
け、該高周波導入電極15により中性原子をイオ
ン化する。イオン化する原理は次の通りである。
該中性原子に高周波が作用すると、電子とイオン
(中性原子から電子を取り除いた部分)は各々電
場に対する応答速度が異なるため異なつた振動モ
ードとなり、その結果中性原子は電子とイオンに
分離する。このようにイオン化された中性原子の
進路を偏向板13で曲げトラツプ14に向ける。 However, since neutral atoms have no electric charge, the deflection plate 13 does not work. Therefore, as shown in FIG. do. The principle of ionization is as follows.
When a high frequency wave acts on the neutral atom, the electrons and ions (the parts of the neutral atom from which electrons have been removed) have different response speeds to the electric field, resulting in different vibrational modes, and as a result, the neutral atom is separated into electrons and ions. do. The path of the neutral atoms thus ionized is bent by the deflection plate 13 and directed toward the trap 14.
以上説明した高周波導入電極と偏向板の構成の
斜視図を第5図に示す。 FIG. 5 shows a perspective view of the structure of the high frequency introduction electrode and deflection plate described above.
また、高周波導入電極と偏向板との関係は第6
図に示すように偏向板13を照射面側(マスク
b)を配置してもよい。 Also, the relationship between the high frequency introduction electrode and the deflection plate is as follows.
As shown in the figure, the deflection plate 13 may be placed with the irradiation surface side (mask b) facing.
なお、偏向板13の代りに磁界による偏向器を
用いてもよい。 Note that instead of the deflection plate 13, a deflector using a magnetic field may be used.
本発明ではプラズマイオン,中性原子,電子の
マスクへの衝撃付着の防止のために、X線源9と
マスクbとの間にX線透過薄膜を配置しないで、
高周波導入電極14と偏向板13を配置し、プラ
ズマイオン,中性原子,電子の進路を変更し、マ
スクbに向わないようにしているので、X線量を
減衰させることなく、線量の有効利用,露光量の
変動の減少がはかれる。 In the present invention, in order to prevent plasma ions, neutral atoms, and electrons from adhering to the mask, an X-ray transparent thin film is not disposed between the X-ray source 9 and the mask b.
The high-frequency introduction electrode 14 and the deflection plate 13 are arranged to change the course of plasma ions, neutral atoms, and electrons so that they do not go toward the mask b, so the X-ray dose is not attenuated and the dose is used effectively. , the fluctuation in exposure amount can be reduced.
以上の本発明によればX線量の有効利用、露光
量の変動の少ないX線転写装置を提供でき、その
実用上の効果は大きい。 According to the present invention as described above, it is possible to provide an X-ray transfer apparatus that makes effective use of the X-ray dose and has little variation in the exposure dose, which has great practical effects.
第1図は放電プラズマX線発生装置を説明する
ための概念図、第2図は第1図の放電プラズマX
線発生装置をX線源として使用した従来のX線転
写装置の構成を説明するための概念図。第3〜4
図は本発明によるX線転写装置の1実施例を説明
するための断面図、第5図は本発明による高周波
導入電極と偏向板の構成を示す斜視図、第6図は
本発明による高周波導入電極と偏向板の配置の別
の実施例を示す断面図。
図中、9はX線源、13は偏向板、14はトラ
ツプ、15は高周波導入電極を示す。
Figure 1 is a conceptual diagram for explaining the discharge plasma X-ray generator, and Figure 2 is the discharge plasma X of Figure 1.
FIG. 1 is a conceptual diagram for explaining the configuration of a conventional X-ray transfer device using a ray generator as an X-ray source. 3rd to 4th
The figure is a sectional view for explaining one embodiment of the X-ray transfer device according to the present invention, FIG. 5 is a perspective view showing the structure of the high frequency introduction electrode and deflection plate according to the present invention, and FIG. 6 is the high frequency introduction according to the present invention. FIG. 7 is a cross-sectional view showing another example of the arrangement of electrodes and deflection plates. In the figure, 9 is an X-ray source, 13 is a deflection plate, 14 is a trap, and 15 is a high frequency introducing electrode.
Claims (1)
とからなる管の中で、両電極による放電を生ぜし
め、そこに電子ビームを投入することにより、X
線を発生する放電プラズマX線発生装置と、該X
線発生装置とX線照射面との間に、高周波の高電
圧を導入する電極と高電圧を印加する偏向板又は
磁界による偏向器を備え、 該高周波の高電圧を導入する電極によりプラズ
マ中にある中性原子をイオン化し、一方高電圧を
印加する偏向板又は磁界による偏向器により前記
イオン化された原子及びプラズマからイオン,電
子を前記照射面から外れた位置へ向わせるように
したことを特徴とするX線転写装置。[Scope of Claims] 1. In a tube consisting of two discharge electrodes and an insulator sandwiched between them, an electric discharge is generated by both electrodes, and an electron beam is injected into the tube.
a discharge plasma X-ray generator that generates a
Between the ray generator and the X-ray irradiation surface, an electrode for introducing high frequency and high voltage and a deflection plate or a magnetic field deflector for applying high voltage are provided, and the electrode for introducing high frequency and high voltage is used to introduce the high voltage into the plasma. A certain neutral atom is ionized, and ions and electrons from the ionized atoms and plasma are directed to a position away from the irradiation surface using a deflection plate applying a high voltage or a deflector using a magnetic field. Characteristic X-ray transfer device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999680A JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999680A JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56116622A JPS56116622A (en) | 1981-09-12 |
| JPS622700B2 true JPS622700B2 (en) | 1987-01-21 |
Family
ID=12014764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1999680A Granted JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116622A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130351A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | X-ray device |
| JPS58115821A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | X-ray exposure device |
| JPS58113899A (en) * | 1981-12-28 | 1983-07-06 | 富士通株式会社 | X-ray irradiation device |
| JPS5913325A (en) * | 1982-07-14 | 1984-01-24 | Nec Corp | Plasma x-ray exposure apparatus |
| TWI255394B (en) | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
-
1980
- 1980-02-20 JP JP1999680A patent/JPS56116622A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116622A (en) | 1981-09-12 |
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