JPS6227383B2 - - Google Patents
Info
- Publication number
- JPS6227383B2 JPS6227383B2 JP304982A JP304982A JPS6227383B2 JP S6227383 B2 JPS6227383 B2 JP S6227383B2 JP 304982 A JP304982 A JP 304982A JP 304982 A JP304982 A JP 304982A JP S6227383 B2 JPS6227383 B2 JP S6227383B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- pattern
- etching
- inner lead
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 本発明はフオトマスクに関する。[Detailed description of the invention] The present invention relates to photomasks.
回路基板を写真法により製造する場合、回路パ
ターンを形成するために露光を行ない、その際に
フオトマスクを使用する。フオトマスクには用い
るフオトレジストによりポジとネガの二種があ
る。ここではポジについてのみ説明するが、ネガ
についても紫外線の透過部と遮蔽部を逆にするこ
とにより全く同様のことがいえる。 When manufacturing a circuit board by a photographic method, exposure is performed to form a circuit pattern, and a photomask is used at this time. There are two types of photomasks, positive and negative, depending on the photoresist used. Although only the positive image will be explained here, the same thing can be said about the negative image by reversing the ultraviolet transmitting portion and the blocking portion.
従来のフオトマスクは第１図のごとく、パター
ン部と他の部分が、完全に遮蔽部２と透過部３に
２分されているため、このようなフオトマスクを
用いて写真法で製造された基板の導体厚みは初期
的に一様ならば全面にわたり同一となる。従つて
回路基板の導体の一部にくぼみを作りたい場合、
つまり一部をハーフエツチングをしたい場合には
露光現像、エツチングの各工程を繰り返さなけれ
ばならず工程が長くなるほか、パターン全体がオ
ーバーエツチングになりやすい、フオトレジスト
の脱落によりパターン形状が不ぞろいになるなど
の欠点がある。 As shown in Figure 1, in a conventional photomask, the pattern part and other parts are completely divided into a shielding part 2 and a transmitting part 3. If the conductor thickness is initially uniform, it will be the same over the entire surface. Therefore, if you want to make a recess in a part of the conductor of the circuit board,
In other words, if you want to half-etch a part, you have to repeat the exposure, development, and etching steps, which lengthens the process.In addition, the entire pattern tends to be over-etched, and the pattern shape becomes irregular due to the photoresist falling off. There are drawbacks such as.
本発明はかかる欠点を除去し、エツチング時に
パターンを形成すると同時にハーフエツチングを
行なうことも可能とするフオトマスクを与えるも
のである。 The present invention eliminates such drawbacks and provides a photomask that allows half etching to be performed at the same time as forming a pattern during etching.
第２図は本発明の一実施例であり、素子のリー
ドの位置合せのために、回路基板のランドにくぼ
みを形成するためのフオトマスクの一部を示すも
のである。フオトマスク４は導体パターンを示す
遮蔽部５と周囲の透過部６および導体パターンの
ランドの位置にある多数のピンホール状の透過部
７とよりなつている。このフオトマスク４により
露光すると、遮蔽部５を除く透過部６およびピン
ホール状の透過部７にあたる部分のフオトレジス
トが感光し、現像を行うことにより取り除かれ
る。さらにエツチング工程においてフオトレジス
トのない部分の導体が奮食し除去されるが、ピン
ホール状の透過部７にあたる部分は透過部６に比
べ面積が小さくエツチング液がしみこみにくいた
めエツチング速度が遅くなる。従つて透過部６に
あたる部分の導体が完全に除去されても、ピンホ
ール状の透過部７にあたる部分の導体はハーフエ
ツチングの状態で残り、第３図に示すようにラン
ドにくぼみが形成される。このように本発明のフ
オトマスクを用いると、１回の工程でパターン形
成とハーフエツチングが同時にできるため工程が
大幅に短縮されるほかフオトマスクも一枚で済み
コスト低減の効果が大きい。 FIG. 2 is an embodiment of the present invention, and shows a part of a photomask for forming recesses in lands of a circuit board for alignment of device leads. The photomask 4 consists of a shielding part 5 showing a conductive pattern, a surrounding transparent part 6, and a large number of pinhole-shaped transparent parts 7 located at the positions of lands of the conductive pattern. When exposed through this photomask 4, the photoresist in the portion corresponding to the transparent portion 6 excluding the shielding portion 5 and the pinhole-shaped transparent portion 7 is exposed and removed by development. Furthermore, in the etching process, the conductor in the area where there is no photoresist is eroded and removed, but the area corresponding to the pinhole-shaped transparent part 7 is smaller than the transparent part 6 and is difficult to penetrate with the etching solution, so that the etching speed is slowed down. Therefore, even if the conductor in the part corresponding to the transparent part 6 is completely removed, the conductor in the part corresponding to the pinhole-shaped transparent part 7 remains in a half-etched state, and a depression is formed in the land as shown in FIG. . As described above, when the photomask of the present invention is used, pattern formation and half-etching can be performed simultaneously in one process, which greatly shortens the process, and also requires only one photomask, resulting in a significant cost reduction effect.
第４図は本発明の他の実施例であり、バンプ付
テープ作製用のフオトマスクのインナーリードパ
ターンの一部である。インナーリードパターンを
示す遮蔽部８の先端よりやや内側にピンホール状
の透過部９を多数設けることによりこの部分がハ
ーフエツチングされ、第５図に示すバンプ付きテ
ープのインナーリードが１回の工程で形成され
る。この場合インナーリードは曲りやすいので工
程数が少なければそれだけ不良品が少なくてすむ
ことより、歩留りを上げる上でも効果がある。 FIG. 4 shows another embodiment of the present invention, which is a part of an inner lead pattern of a photomask for producing a tape with bumps. By providing a large number of pinhole-shaped transparent parts 9 slightly inside the tip of the shielding part 8 showing the inner lead pattern, this part is half-etched, and the inner lead of the bumped tape shown in Fig. 5 is formed in one process. It is formed. In this case, since the inner leads are easily bent, the fewer the number of steps, the fewer defective products, which is effective in increasing the yield.
以上のように本発明によるフオトマスクは、導
体パターンの一部にくぼみを必要とする基板製造
を容易にするものである。 As described above, the photomask according to the present invention facilitates the manufacture of a substrate that requires a recess in a part of the conductor pattern.
第１図は従来のフオトマスクの斜視図、第２図
は本発明の第１の実施例のフオトマスクを示す平
面図、第３図はくぼみを有するランドの斜視図、
第４図は本発明の第２の実施例であるインナーリ
ードパターンの一部を示す平面図、第５図はバン
プ付テープのインナーリードの斜視図である。
１，４……フオトマスク、２，５，８……パタ
ーンを示す遮蔽部、３，６……パターン周辺の透
過部、７，９……ピンホール状の透過部。
FIG. 1 is a perspective view of a conventional photomask, FIG. 2 is a plan view showing a photomask according to a first embodiment of the present invention, and FIG. 3 is a perspective view of a land having a recess.
FIG. 4 is a plan view showing a part of the inner lead pattern according to the second embodiment of the present invention, and FIG. 5 is a perspective view of the inner lead of the bumped tape. 1, 4... Photo mask, 2, 5, 8... Shielding part showing the pattern, 3, 6... Transmissive part around the pattern, 7, 9... Pinhole-shaped transparent part.
Claims (1)
紫外線の透過部と遮蔽部を有するフオトマスクに
おいて、前記遮蔽部あるいは前記透過部に微細な
透過部あるいは微細な遮蔽部を多数設けハーフエ
ツチングさせることを特徴とするフオトマスク。 ２ バンプ付テープの導体パターンおよびインナ
ーリードのくぼみを同時に形成するために用いる
特許請求の範囲第１項記載のフオトマスク。[Scope of Claims] 1. In a photomask having an ultraviolet transmitting part and a blocking part, which is used when manufacturing a circuit board by a photographic method, the shielding part or the transmitting part has a large number of minute transmitting parts or minute blocking parts. A photo mask characterized by half-etching. 2. The photomask according to claim 1, which is used to simultaneously form the conductor pattern of the bumped tape and the recess of the inner lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57003049A JPS58120254A (en) | 1982-01-12 | 1982-01-12 | photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57003049A JPS58120254A (en) | 1982-01-12 | 1982-01-12 | photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58120254A JPS58120254A (en) | 1983-07-18 |
| JPS6227383B2 true JPS6227383B2 (en) | 1987-06-15 |
Family
ID=11546453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57003049A Granted JPS58120254A (en) | 1982-01-12 | 1982-01-12 | photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58120254A (en) |
-
1982
- 1982-01-12 JP JP57003049A patent/JPS58120254A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58120254A (en) | 1983-07-18 |
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