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JPS6227445B2 - - Google Patents
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JPS6227445B2 - - Google Patents

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Publication number
JPS6227445B2
JPS6227445B2 JP9780A JP9780A JPS6227445B2 JP S6227445 B2 JPS6227445 B2 JP S6227445B2 JP 9780 A JP9780 A JP 9780A JP 9780 A JP9780 A JP 9780A JP S6227445 B2 JPS6227445 B2 JP S6227445B2
Authority
JP
Japan
Prior art keywords
winding
conductor
film
magnetic
conductor portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9780A
Other languages
Japanese (ja)
Other versions
JPS5698711A (en
Inventor
Hiroji Kawakami
Masanobu Hanazono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9780A priority Critical patent/JPS5698711A/en
Publication of JPS5698711A publication Critical patent/JPS5698711A/en
Publication of JPS6227445B2 publication Critical patent/JPS6227445B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/313Disposition of layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)

Description

【発明の詳細な説明】 本発明は薄膜磁気ヘツド用電気巻線の製造方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing electrical windings for thin film magnetic heads.

近年、集積回路の形成技術を応用して薄膜磁気
ヘツド(磁気記録用磁気変換ヘツドともいう)が
形成されるようになつた。薄膜磁気ヘツドは例え
ば第1図に示すごときものであり、基体1上に形
成された磁性体2および3によつてヘツドの先端
部において磁気ギヤツプ6を持つごとき磁路が形
成せしめられる。電気巻線を上記磁路と交差せし
めることによつて、磁路と電気巻線の間に電気磁
気変換を成さしめる。すなわち、電気巻線の両端
子5a,5b間に電流を与えると、磁気ギヤツプ
6に強い磁界が発生し、この磁界によつて磁気ギ
ヤツプ6の近傍に配置された図示なき記録媒体が
磁化される。逆に磁化された記録媒体を磁気ギヤ
ツプ6の近傍を移動せしめることにより、磁気ギ
ヤツプ6を通じて磁気中に磁束の変化が生じ、電
気巻線に起電力が発生し、端子5a,5b間に電
気信号が得られる。
In recent years, thin film magnetic heads (also referred to as magnetic conversion heads for magnetic recording) have come to be formed by applying integrated circuit formation techniques. A thin film magnetic head is, for example, as shown in FIG. 1, in which magnetic bodies 2 and 3 formed on a base 1 form a magnetic path having a magnetic gap 6 at the tip of the head. By intersecting the electric winding with the magnetic path, electromagnetic conversion is effected between the magnetic path and the electric winding. That is, when a current is applied between both terminals 5a and 5b of the electric winding, a strong magnetic field is generated in the magnetic gap 6, and a recording medium (not shown) placed near the magnetic gap 6 is magnetized by this magnetic field. . On the other hand, by moving a reversely magnetized recording medium near the magnetic gap 6, a change in magnetic flux occurs in the magnetic field through the magnetic gap 6, an electromotive force is generated in the electric winding, and an electric signal is generated between the terminals 5a and 5b. is obtained.

上記の如く動作する磁気ヘツドを薄膜で形成す
ることにより以下の如き利点がもたらされる。
Forming a magnetic head that operates as described above from a thin film provides the following advantages.

(i) 磁性体3を写真食刻法で形成することによ
り、磁気ギヤツプの第1図y方向の幅を再現性
良く微小化でき、従つて記録トラツク密度を高
くできる。
(i) By forming the magnetic material 3 by photolithography, the width of the magnetic gap in the y-direction of FIG. 1 can be miniaturized with good reproducibility, and the recording track density can therefore be increased.

(ii) 磁性体2,3として用いられる例えばパーマ
ロイ系合金の薄膜は、30〜50MHz程度まで透
磁率が低下しない。従つて従来のフエライトコ
アで作られていた磁気ヘツドに比べ高周波動作
に優れ、線記録密度を高め得る。
(ii) For example, thin films of permalloy alloy used as the magnetic bodies 2 and 3 do not have a decrease in magnetic permeability up to about 30 to 50 MHz. Therefore, compared to conventional magnetic heads made with ferrite cores, it is superior in high frequency operation and can increase linear recording density.

しかし磁気ヘツドを薄膜で構成する上での制約
もあり、この点については以下に詳細に説明す
る。
However, there are restrictions in constructing the magnetic head with a thin film, and these points will be explained in detail below.

第2図は薄膜ヘツドの主要部分である第1図
−断面を示すものであり、情報の記録を行なう
際に、巻線の各片4a,4b,4c,4dに紙面
を貫ぬく同一方向に電流を与えたとき、第2図の
破線で示す如き磁力線が発生する。この磁力線は
磁性体2と3で囲まれた巻線窓部7にも漏れる。
これらの磁力線は磁路の後端(第2図左端)に累
積する。従つて、この後端で磁路を構成する材料
に磁気的飽和をもたらし、磁気ギヤツプ6に十分
強い磁界を発生させ得ないことがある。
Figure 2 shows a cross-section of the main part of the thin film head compared to Figure 1. When recording information, each piece of winding 4a, 4b, 4c, 4d is shown in the same direction penetrating the plane of the paper. When a current is applied, magnetic lines of force as shown by the broken lines in FIG. 2 are generated. These magnetic lines of force also leak to the winding window 7 surrounded by the magnetic bodies 2 and 3.
These lines of magnetic force accumulate at the rear end of the magnetic path (left end in Figure 2). Therefore, this rear end may bring about magnetic saturation in the material constituting the magnetic path, making it impossible to generate a sufficiently strong magnetic field in the magnetic gap 6.

この現象を防止するために巻線窓部7の高さ
haを十分に大きくするとともに、巻線窓部7の
奥行方向幅Lを小さくしなければならず、本発明
者らの研究によれば、その一例としてhaを8μ
mとするときLを100μm以下にすることが挙げ
られる。
In order to prevent this phenomenon, the height of the winding window 7
In addition to making ha sufficiently large, the width L in the depth direction of the winding window 7 must be made small.According to the research of the present inventors, one example of this is setting ha to 8μ.
An example of this is to set L to 100 μm or less, where m is 100 μm or less.

一方、かかる磁気ヘツドの感度を高める(情報
を記録するに要する電流の振幅を小さくなし、情
報を再生して得られる信号電圧を大きくする)た
めには、磁路と交差する巻線4の巻数を大きく選
ぶ必要がある。ところが、上記の如く奥行方向幅
Lが制約されているため、微細加工技術上本数を
増すことは困難であつた。すなわち、第3図に示
す如く、基本1上に堆積された導体10をホトレ
ジスト11により所望形状に化学的に食刻形成す
る場合、理想的状態ではホトレジスト11の端部
から同心円状に食刻が進行する。従つてホトレジ
スト11の開口幅をDとすれば厚みtの導体10
を食刻したとき、導体10の除去された部分の平
均幅(溝幅)はD+1/2πrとなる。導体10
の厚みtが大きい場合、食刻すべき量が増し、食
刻により能力が低下した食刻液を循環除去させる
ために開口幅Dを大きくしなければならない。従
つて、導体10の厚みを2.8μmとし、開口幅D
を2.8μmとすれば導体10の溝幅は7.0μm程度
となる。
On the other hand, in order to increase the sensitivity of such a magnetic head (reducing the amplitude of the current required to record information and increasing the signal voltage obtained by reproducing information), it is necessary to increase the number of turns of the winding 4 that intersects with the magnetic path. It is necessary to choose a large number. However, since the width L in the depth direction is restricted as described above, it has been difficult to increase the number in terms of microfabrication technology. That is, as shown in FIG. 3, when the conductor 10 deposited on the base 1 is chemically etched into a desired shape using the photoresist 11, in an ideal state, the etching is concentrically formed from the edge of the photoresist 11. proceed. Therefore, if the opening width of the photoresist 11 is D, then the conductor 10 with the thickness t
When etched, the average width (groove width) of the removed portion of the conductor 10 is D+1/2πr. conductor 10
When the thickness t is large, the amount to be etched increases, and the opening width D must be increased in order to circulate and remove the etching liquid whose performance has been reduced due to etching. Therefore, the thickness of the conductor 10 is 2.8 μm, and the opening width D
If 2.8 μm, the groove width of the conductor 10 will be about 7.0 μm.

一方、巻線4に与えられる電流は100〜200mA
程度であり、巻線4の温度上昇による断線を避け
るためには、電流密度を5×105A/cm2程度以下
にしなければならず、従つて巻線4の各片の断面
積は少なくとも2×10-7cm2(20μm2)以上でなけ
ればならない。巻線4を形成する導体10の厚み
tを2.8μmとすれば、巻線4の各片の幅は7.1μ
m以上要することになり巻数を8とすると巻線4
の奥行幅は約104μmとなる。
On the other hand, the current given to winding 4 is 100 to 200 mA
In order to avoid disconnection due to temperature rise in the winding 4, the current density must be kept below about 5×10 5 A/cm 2 , and therefore the cross-sectional area of each piece of the winding 4 is at least It must be at least 2×10 -7 cm 2 (20 μm 2 ). If the thickness t of the conductor 10 forming the winding 4 is 2.8 μm, the width of each piece of the winding 4 is 7.1 μm.
If the number of turns is 8, the winding is 4.
The depth width is approximately 104 μm.

本発明の目的は、上記した従来技術の欠点を改
良し、電気巻線の充実度を高めた薄膜磁気ヘツド
用電気巻線の製造方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing an electric winding for a thin film magnetic head, which improves the drawbacks of the prior art described above and improves the degree of completeness of the electric winding.

本発明の要旨は、下記の一連の工程を含むこと
を特徴とする薄膜磁気ヘツド用電気巻線の製造方
法にある。
The gist of the present invention is a method of manufacturing an electrical winding for a thin film magnetic head, which is characterized by including the following series of steps.

(i) 第1の導体膜を堆積させた後、該第1の導体
膜を部分的に被覆する第1の絶縁体膜を形成さ
せ、次いで、前記第1の導体膜の第1の絶縁体
膜に被覆されていない部分を除去し、上部が第
1の絶縁体膜で被覆された複数の第1の導体部
分を形成させる工程、 (ii) 前記第1の導体部分の側部に第2の絶縁体膜
を形成させる工程、 (iii) 第1の絶縁体膜及び第2の絶縁体膜で被覆さ
れた複数の第1の導体部分の間隙に第2の導体
部分を堆積させる工程、 (iv) 前記第1の絶縁体膜およびこの上に堆積され
た第2の導体部分を除去する工程、および (v) 前記第1の導体部分と第2の導体部分の上に
第3の絶縁体膜を形成させる工程。
(i) After depositing a first conductive film, a first insulating film is formed to partially cover the first conductive film, and then a first insulating film of the first conductive film is formed. (ii) forming a plurality of first conductor parts whose upper parts are covered with a first insulating film by removing the parts not covered with the film; (ii) forming a second conductor part on the side of the first conductor part; (iii) depositing a second conductor portion in the gaps between the plurality of first conductor portions covered with the first insulator film and the second insulator film; iv) removing the first insulator film and the second conductor portion deposited thereon; and (v) depositing a third insulator over the first and second conductor portions. A process of forming a film.

以下に本発明の実施例を第4図〜第6図に基づ
いて説明する。
Embodiments of the present invention will be described below with reference to FIGS. 4 to 6.

第4図は本発明の薄膜磁気ヘツド用電気巻線の
製造方法における一連の工程を示すものであり、
第4図(i)において真空蒸着、スパツタリングある
いは電気めつきなどの公知の手段で形成された第
1の導体膜に複数のホトレジスト15を所定形状
に形成した後、化学的食刻法、スパツタエツチ法
あるいはイオンミリングなどの公知の手段により
複数の第1の導体部分16を形成する。
FIG. 4 shows a series of steps in the method of manufacturing an electric winding for a thin film magnetic head according to the present invention.
In FIG. 4(i), a plurality of photoresists 15 are formed in a predetermined shape on a first conductive film formed by a known method such as vacuum evaporation, sputtering, or electroplating, and then a chemical etching method or a sputter etching method is used. Alternatively, the plurality of first conductor portions 16 are formed by known means such as ion milling.

次に第4図(ii)においてホトレジスト15を残し
たまま第1の導体部分16の側端部に第2の絶縁
体膜17を静電的あるいは電気化学的手法で形成
する。
Next, in FIG. 4(ii), a second insulating film 17 is formed on the side end portion of the first conductor portion 16 by an electrostatic or electrochemical method while leaving the photoresist 15.

更に第4図(iii)において、複数の第2の導体部分
18を真空蒸着あるいはスパツタリングにより複
数の第1の導体部分16の間隙に堆積させる。
Further, in FIG. 4(iii), a plurality of second conductor portions 18 are deposited in the gaps between the plurality of first conductor portions 16 by vacuum deposition or sputtering.

次に第4図(iv)においてホトレジスト15を溶解
除去させると、ホトレジスト15上に堆積された
第2の導体部分18aがホトレジスト15ととも
に除去される。このとき、先に形成された第1の
導体部分16と新たに形成された第2の導体部分
18は、第2の絶縁体膜17より互いに電気的に
絶縁されている。
Next, in FIG. 4(iv), when the photoresist 15 is dissolved and removed, the second conductor portion 18a deposited on the photoresist 15 is removed together with the photoresist 15. At this time, the previously formed first conductor portion 16 and the newly formed second conductor portion 18 are electrically insulated from each other by the second insulating film 17.

更に第4図(v)において第2の導体部分18の両
端部を化学食刻法などにより所望形状に形成した
後、第1の導体部分16と第2の導体部分18の
上に第3の絶縁体膜20を堆積させ、両者を互い
に電気的に絶縁して本発明の電気巻線を得る。
Further, in FIG. 4(v), after both ends of the second conductor portion 18 are formed into a desired shape by chemical etching or the like, a third conductor portion is formed on the first conductor portion 16 and the second conductor portion 18. An insulator film 20 is deposited to electrically insulate them from each other to obtain the electrical winding of the present invention.

次に第5図に示す如く、2つの導体部分(以下
巻線部分という)16と18を電気的に接続して
一個の完結した電気巻線を得る。すなわち、第5
図において、図示なき電気絶縁体20の所定部分
を除去して接続用窓21a〜21dを形成した後
に第3の導体膜22a,22bを形成することに
より、23a,23bを両端子とし、23cを中
点端子とする電気巻線が得られる。
Next, as shown in FIG. 5, two conductor portions (hereinafter referred to as winding portions) 16 and 18 are electrically connected to obtain one complete electrical winding. That is, the fifth
In the figure, by forming connection windows 21a to 21d by removing a predetermined portion of an electrical insulator 20 (not shown) and then forming third conductor films 22a and 22b, 23a and 23b are used as both terminals, and 23c is An electrical winding with a midpoint terminal is obtained.

上述の如く、本発明によれば巻線に隣接する各
片が絶縁体膜17の厚みだけの間隔で配置される
ため、巻線の充実度が高まり、巻線の巻数が同一
である場合は巻線の奥行幅Lを短縮でき、また奥
行幅Lが同じである場合には従来法に比べ、より
多くの巻回数とすることができる。
As described above, according to the present invention, since the pieces adjacent to the winding are arranged at intervals equal to the thickness of the insulating film 17, the degree of completeness of the winding increases, and when the number of turns of the winding is the same, The depth width L of the winding can be shortened, and when the depth width L is the same, the number of windings can be increased compared to the conventional method.

例えば巻線部分16及び18の厚みを2.8μ
m、平均幅を7.1μmとし、絶縁体膜17の厚み
を1μmとすれば、巻数8を得るために従来例で
は巻線の奥行幅Lが約104μmであつたのに対
し、本発明では巻線の奥行幅Lは66μmであり、
また巻数を12としても巻線の奥行幅Lは約98μ
mであつた。すなわち、本発明の方法により巻線
の充実度を約1.5倍高めることができた。
For example, the thickness of the winding portions 16 and 18 is 2.8μ.
m, the average width is 7.1 μm, and the thickness of the insulator film 17 is 1 μm. In order to obtain 8 turns, the depth width L of the winding was approximately 104 μm in the conventional example, whereas in the present invention, the depth L of the winding was approximately 104 μm. The depth width L of the line is 66 μm,
Also, even if the number of turns is 12, the depth width L of the winding is approximately 98μ.
It was m. That is, the method of the present invention was able to increase the degree of completeness of the windings by approximately 1.5 times.

また、本発明の方法によれば第2の巻線部分1
8は第1の巻線部分16を形成したホトレジスト
膜によつて形状が決定されるため、第1の巻線部
分16と第2の巻線部分18の位置関係が高精度
に決定されるという利点を有する。
Further, according to the method of the present invention, the second winding portion 1
Since the shape of 8 is determined by the photoresist film forming the first winding portion 16, the positional relationship between the first winding portion 16 and the second winding portion 18 is determined with high precision. has advantages.

更に本発明の利点として、第4図(v)より明らか
なように、形成された巻線部分16及び18の上
面が平坦なため、同様の工程を繰り返し、第3、
第4更にはそれ以上の巻線部分を積み重ねること
ができることが挙げられる。このときは、第5図
に示す如く、第1と第2の巻線部分を外周から内
周に巻き、第3と第4の巻線部分を内周から外周
に巻くことによつて、接続用導体22aと22b
を不要とすることも可能である。
Furthermore, as an advantage of the present invention, as is clear from FIG. 4(v), since the upper surfaces of the formed winding portions 16 and 18 are flat, similar steps can be repeated to
Fourth, even more winding sections can be stacked. At this time, as shown in Figure 5, the first and second winding parts are wound from the outer circumference to the inner circumference, and the third and fourth winding parts are wound from the inner circumference to the outer circumference. conductors 22a and 22b
It is also possible to make it unnecessary.

以下に第4図(ii)に示した巻線部分16の側端部
に絶縁体膜17を形成させる方法を説明する。
A method for forming the insulator film 17 on the side end portion of the winding portion 16 shown in FIG. 4(ii) will be described below.

第1の方法は電気化学的方法、特に陽極酸化法
であり、この方法は、巻線部分16になる第1の
導体の材質が酸化されて酸化物となつたときに良
質の非水溶性絶縁体を構成するものに限定され
る。このような第1の導体の材質としては、アル
ミニウム、タンタルあるいはジルコニウムなどが
挙げられるが、以下ではアルミニウムを例にして
説明する。アルミニウムを希硫酸、しゆう酸、ク
ロム酸などの水溶液に浸し、陰極を白金等の貴金
属、陽極をアルミニウムとして、0.3A/dm2
度の電流を与えると、アルミニウム表面に薄いア
ルミナの層が形成される。この方法は、ピンホー
ルが生ずることが極めて少ないため、1μm以下
の薄膜でも絶縁体膜として良好に機能する。本発
明者らの研究によれば、ホトレジストとして商品
名OMR83なるものを用い、硫酸又はしゆう酸水
溶液で陽極酸化すれば、ホトレジストの劣化を起
すことなく露出部分のみにアルミナ絶縁体膜を形
成することができる。
The first method is an electrochemical method, in particular an anodization method, which is used to form a good quality water-insoluble insulator when the material of the first conductor, which becomes the winding section 16, is oxidized to an oxide. Limited to things that make up the body. Examples of the material for such a first conductor include aluminum, tantalum, and zirconium, and the following description will be made using aluminum as an example. When aluminum is immersed in an aqueous solution of dilute sulfuric acid, oxalic acid, chromic acid, etc., a noble metal such as platinum is used as the cathode, and aluminum is used as the anode, and a current of about 0.3A/dm2 is applied, a thin alumina layer is formed on the aluminum surface. be done. This method produces very few pinholes, so even a thin film of 1 μm or less functions well as an insulator film. According to the research of the present inventors, if a photoresist with the trade name OMR83 is used and anodized with sulfuric acid or oxalic acid aqueous solution, an alumina insulating film can be formed only on the exposed parts without causing deterioration of the photoresist. be able to.

第2の方法は電気泳動法である。この方法はガ
ラス等の微細粉末をイソプロピルアルコールなど
の液中に懸濁させ、被付着体を陰極とし、白金等
を陽極として両極間に100〜500Vの電圧を印加す
る。ガラス等の粉末は静電界で吸引され、導体の
表面に吸着する。そして溶媒液から取り出し、乾
燥せしめた後、300〜400℃の温度でガラス等の微
細粉末を焼結せしめると所望の絶縁体膜17が得
られる。この方法においては上記ホトレジストを
使用することができず、より耐熱性の高い商品名
PIQなる有機系樹脂あるいはSiO2なる無機物質を
使用する必要がある。
The second method is electrophoresis. In this method, a fine powder of glass or the like is suspended in a liquid such as isopropyl alcohol, the object to be adhered is used as a cathode, platinum or the like is used as an anode, and a voltage of 100 to 500 V is applied between the two electrodes. Powder such as glass is attracted by the electrostatic field and sticks to the surface of the conductor. Then, after removing it from the solvent solution and drying it, the fine powder of glass or the like is sintered at a temperature of 300 to 400°C to obtain the desired insulating film 17. In this method, the above photoresists cannot be used, and a product name with higher heat resistance is used.
It is necessary to use an organic resin called PIQ or an inorganic substance called SiO 2 .

第3の方法として、SiO2、Si3N4あるいはアル
ミナなどの蒸気を真空中で帯電させたり、あるい
はイオン化させた後に静電界で吸引し吸着させる
イオン蒸着、イオンスパツタ法も使用することが
できる。
As a third method, ion vapor deposition or ion sputtering methods can be used in which a vapor of SiO 2 , Si 3 N 4 or alumina is charged or ionized in a vacuum and then attracted and adsorbed by an electrostatic field.

上記説明では電気絶縁膜としてホトレジスト1
5を用いた例を示したが、該電気絶縁膜としては
2種以上の膜が複合された物でも良いことは明ら
かである。例えば第4図(iii)に示す工程でホトレジ
スト15上に形成された導体部分18aは、導体
18と分離されている必要があるが、ホトレジス
ト15の厚みが小さい場合には導体18aが導体
18と一体化してしまうことがある。このような
場合には第6図に示す如く導体16上に例えば前
述の絶縁性有機樹脂であるPIQの層15aを形成
させ、その上に更にホトレジスト15を形成させ
るのが好ましい。またホトレジスト15の代りに
PIQ層15aを形成させることもできる。
In the above explanation, photoresist 1 is used as the electrical insulating film.
Although an example using No. 5 has been shown, it is clear that the electrical insulating film may be a composite of two or more kinds of films. For example, the conductor portion 18a formed on the photoresist 15 in the step shown in FIG. Sometimes they become unified. In such a case, it is preferable to form a layer 15a of PIQ, which is the above-mentioned insulating organic resin, on the conductor 16, as shown in FIG. 6, and further form a photoresist 15 thereon. Also, instead of photoresist 15
A PIQ layer 15a can also be formed.

以上詳述した如く、本発明の方法によれば巻線
の充実度が高まり、巻線の巻数が同一である場合
には巻線の奥行幅を短縮でき、また巻線の奥行幅
が同一の場合にはより多くの巻回数を達成するこ
とができた。
As detailed above, according to the method of the present invention, the completeness of the winding can be increased, the depth of the winding can be shortened when the number of turns of the winding is the same, and the depth of the winding can be shortened when the number of turns of the winding is the same. In some cases a higher number of turns could be achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は薄膜磁気ヘツドの斜視図、第2図は第
1図の−線断面図、第3図はホトレジストを
使用し、化学的に食刻された導体膜を示す断面
図、第4図は本発明の薄膜磁気ヘツド用電気巻線
の製造法を示す工程図、第5図は第1の巻線部分
と第2の巻線部分を電気的に接続して得られた一
個の完結した電気巻線を示す図、第6図は2層絶
縁体膜によつてその上部が被覆されている第1の
導体部分を示す図である。 15……第1の絶縁体膜(ホトレジスト)、1
5a……PIQ、16……第1の導体(巻線)部
分、17……第2の絶縁体膜、18……第2の導
体(巻線)部分、18a……第2の導体部分、2
0……第3の絶縁体膜。
Fig. 1 is a perspective view of a thin film magnetic head, Fig. 2 is a sectional view taken along the line - - in Fig. 1, Fig. 3 is a sectional view showing a conductor film chemically etched using photoresist, and Fig. 4. 5 is a process diagram showing the method of manufacturing an electric winding for a thin film magnetic head according to the present invention, and FIG. FIG. 6 is a diagram illustrating an electrical winding, the first conductor portion being covered on top by a two-layer insulating film. 15...first insulator film (photoresist), 1
5a... PIQ, 16... First conductor (winding) part, 17... Second insulator film, 18... Second conductor (winding) part, 18a... Second conductor part, 2
0...Third insulator film.

Claims (1)

【特許請求の範囲】 1 下記の一連の工程を含むことを特徴とする薄
膜磁気ヘツド用電気巻線の製造方法。 (i) 第1の導体膜を堆積させた後、該第1の導体
膜によつて所定の回路を形成するように前記導
体膜を第1の絶縁体膜で被覆し、次いで、前記
第1の絶縁体膜で被覆されていない部分の前記
第1の導体膜を除去し、上部が第1の絶縁体膜
で被覆された第1の導体部分を形成させる工
程、 (ii) 前記第1の導体部分の側部に第2の絶縁体膜
を形成させる工程、 (iii) 前記第1の絶縁体膜及び第2の絶縁体膜で被
覆された第1の導体部分の間隙に第2の導体部
分を堆積させる工程、 (iv) 前記第1の絶縁体膜およびこの上に堆積され
た第2の導体部分を除去する工程、および (v) 前記第1の導体部分と第2の導体部分の上に
第3の絶縁体膜を形成させる工程。 2 前記第1の導体に陽極酸化によつて表面に電
気的絶縁膜を形成し得る材料を使用し、前記(ii)の
工程を陽極酸化法によつて行なう特許請求の範囲
第1項記載の薄膜磁気ヘツド用電気巻線の製造方
法。 3 前記(ii)の工程を電気泳動法によつて行なう特
許請求の範囲第1項記載の薄膜磁気ヘツド用電気
巻線の製造方法。 4 前記(ii)の工程をイオン蒸着又はイオンスパツ
タ法で行なう特許請求の範囲第1項記載の薄膜磁
気ヘツド用電気巻線の製造方法。
[Scope of Claims] 1. A method for manufacturing an electric winding for a thin film magnetic head, which comprises the following series of steps. (i) After depositing the first conductive film, the conductive film is covered with a first insulating film so that a predetermined circuit is formed by the first conductive film, and then the first (ii) removing a portion of the first conductor film that is not covered with the insulator film to form a first conductor portion whose upper part is covered with the first insulator film; (iii) forming a second insulator film on the side of the conductor portion; (iii) forming a second conductor in the gap between the first conductor portion covered with the first insulator film and the second insulator film; (iv) removing the first insulating film and the second conductor portion deposited thereon; and (v) removing the first conductor portion and the second conductor portion. A step of forming a third insulator film thereon. 2. The method according to claim 1, wherein the first conductor is made of a material capable of forming an electrically insulating film on its surface by anodizing, and the step (ii) is carried out by anodizing. A method of manufacturing an electric winding for a thin film magnetic head. 3. The method of manufacturing an electric winding for a thin film magnetic head according to claim 1, wherein the step (ii) is carried out by electrophoresis. 4. The method of manufacturing an electric winding for a thin film magnetic head according to claim 1, wherein the step (ii) is carried out by ion deposition or ion sputtering.
JP9780A 1980-01-07 1980-01-07 Manufacture of electronic winding for thin-film magnetic head Granted JPS5698711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9780A JPS5698711A (en) 1980-01-07 1980-01-07 Manufacture of electronic winding for thin-film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9780A JPS5698711A (en) 1980-01-07 1980-01-07 Manufacture of electronic winding for thin-film magnetic head

Publications (2)

Publication Number Publication Date
JPS5698711A JPS5698711A (en) 1981-08-08
JPS6227445B2 true JPS6227445B2 (en) 1987-06-15

Family

ID=11464593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9780A Granted JPS5698711A (en) 1980-01-07 1980-01-07 Manufacture of electronic winding for thin-film magnetic head

Country Status (1)

Country Link
JP (1) JPS5698711A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559292A1 (en) * 1984-02-03 1985-08-09 Commissariat Energie Atomique WINDING FOR MAGNETIC HEAD FOR THIN FILM RECORDING AND METHOD FOR PRODUCING THE SAME

Also Published As

Publication number Publication date
JPS5698711A (en) 1981-08-08

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