JPS6231830B2 - - Google Patents
Info
- Publication number
- JPS6231830B2 JPS6231830B2 JP56180237A JP18023781A JPS6231830B2 JP S6231830 B2 JPS6231830 B2 JP S6231830B2 JP 56180237 A JP56180237 A JP 56180237A JP 18023781 A JP18023781 A JP 18023781A JP S6231830 B2 JPS6231830 B2 JP S6231830B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- package
- thermally conductive
- heat transfer
- radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【発明の詳細な説明】
〔概要〕
パツケージ熱伝導性支持材に設けられた突出部
の面及び該支持材の大面積の外側授熱面に対し、
放熱器の嵌合部受熱面及び前記支持材外側授熱面
に対面する受熱面を熱伝導性結合剤を用いて結合
させた。[Detailed Description of the Invention] [Summary] With respect to the surface of the protrusion provided on the package thermally conductive support material and the large area outer heat transfer surface of the support material,
The heat receiving surface of the fitting portion of the radiator and the heat receiving surface facing the outer heat receiving surface of the support material were bonded using a thermally conductive binder.
放熱器を有する半導体装置に関する。 The present invention relates to a semiconductor device having a heat sink.
半導体製品パツケージ、特に高速動作をする大
規摸集積回路や電力用半導体素子等のためのパツ
ケージにおいては、そこに発生する熱を速やかに
放散させなければその大規摸集積回路,半導体素
子等に所期の機能を持続させ得ない。 Semiconductor product packages, especially packages for large-scale integrated circuits and power semiconductor devices that operate at high speed, must quickly dissipate the heat generated there, otherwise the large-scale integrated circuits, semiconductor devices, etc. may be damaged. cannot maintain its function.
これに対処する放熱構造体も開発され実用化さ
れているが、その放熱構造体は使用環境条件、例
えば温度条件による悪影響のため、また半導体製
品パツケージに対し大型であり重量もあるため、
その結合部は温度上昇、振動等に対する機械的強
度を十分にしておかなければならない。 A heat dissipation structure has been developed and put into practical use to deal with this problem, but such a heat dissipation structure is adversely affected by the usage environment conditions, such as temperature conditions, and is large and heavy compared to the semiconductor product package.
The joint must have sufficient mechanical strength against temperature rise, vibration, etc.
上述のように、半導体製品パツケージではそこ
に発生する熱を放熱しなければならないが、その
従来の構造は第6図に示す如く、支持軸1に円板
状フイン2を取り付けた放熱器3を、接着用樹
脂、例えばエポキシ樹脂4を用いて、半導体製品
パツケージ5のモリブデン等の金属板6に接着結
合する手段がとられている。
As mentioned above, it is necessary to radiate the heat generated in semiconductor product packages, and the conventional structure is as shown in FIG. A means of adhesively bonding the semiconductor product package 5 to a metal plate 6 made of molybdenum or the like using an adhesive resin such as an epoxy resin 4 is taken.
しかしながら、その接着結合部は半導体製品パ
ツケージ5の平坦な面と放熱器3の平坦な面とを
単に突き合わせてこれら面を接着用樹脂で接着さ
せて成るものであるから、その結合部の機械的強
度は十分でなく、温度上昇、振動等により放熱器
3が半導体製品パツケージ5から離脱してしま
い、その機能が失われ、ひいては半導体素子の破
壊へと発展する虞がある。
However, since the adhesive joint is simply made by butting the flat surface of the semiconductor product package 5 and the flat surface of the heat sink 3 and bonding these surfaces with adhesive resin, the mechanical strength of the joint is The strength is not sufficient, and there is a risk that the heat radiator 3 may separate from the semiconductor product package 5 due to temperature rise, vibration, etc., resulting in loss of its function and, in turn, damage to the semiconductor element.
本発明は、斯かる問題点に鑑みて創作されたも
ので、パツケージ熱伝導性支持材と放熱器との間
に十分な熱伝導性及び機械的強度を有する半導体
装置を堤供することをその目的とする。 The present invention was created in view of such problems, and its purpose is to provide a semiconductor device having sufficient thermal conductivity and mechanical strength between the package thermally conductive support material and the radiator. shall be.
第1図は本発明の原理構成図を示す。この図に
おいて、20は半導体素子25を内部に配置して
気密封止したパツケージで、このパツケージ20
は熱伝導性支持材21を気密封止外筐の一部とし
ており、その熱伝導性支持材21の内側面に半導
体素子25が熱伝導可能に固着されると共にその
外側授熱面には熱伝導性の突出部30が設けられ
ている。31は放熱器33に設けられた前記突出
部30のための嵌合部である。パツケージ20の
熱伝導性支持材外側授熱面及び突出部30の授熱
面と放熱器33の前記熱伝導性支持材外側授熱面
に対面する受熱面及び前記突出部授熱面に対面さ
せられた嵌合部受熱面との間を熱伝導性結合剤3
5で結合させて本発明装置は成る。
FIG. 1 shows a basic configuration diagram of the present invention. In this figure, 20 is a package in which a semiconductor element 25 is arranged and hermetically sealed.
The thermally conductive supporting material 21 is a part of the hermetically sealed outer casing, and the semiconductor element 25 is fixed to the inner surface of the thermally conductive supporting material 21 in a heat conductive manner, and the outer heat transfer surface is heated. A conductive protrusion 30 is provided. Reference numeral 31 denotes a fitting portion for the protrusion 30 provided on the radiator 33. The outer heat transfer surface of the thermally conductive support material of the package 20 and the heat transfer surface of the protrusion 30 are made to face the heat receiving surface of the radiator 33 that faces the outer heat transfer surface of the heat conductive support material, and the heat transfer surface of the protrusion portion. A thermally conductive binder 3 is connected between the heat-receiving surface of the fitted part and the
5 to form the device of the present invention.
本発明によれば、パツケージ熱伝導性支持材2
1と放熱器33との間に、上述の如き熱伝導性を
高めると同時に機械的強度を強化させることので
きる構造を設けているので、その放熱構造部の温
度が上昇し、加えて振動等が与えられることがあ
つたとしても、半導体素子のための放熱機能は維
持され、熱的に弱い半導体素子をその劣化乃至破
壊から保護することができる。従つて、そのよう
な使用環境での装置の信頼性の向上となる。
According to the invention, the package thermally conductive support 2
1 and the heat radiator 33, a structure is provided that can increase the thermal conductivity and strengthen the mechanical strength at the same time as described above, so the temperature of the heat radiating structure increases, and in addition, vibrations, etc. Even if the semiconductor element is given a heat dissipation function, the heat dissipation function for the semiconductor element is maintained, and the thermally weak semiconductor element can be protected from deterioration or destruction. Therefore, the reliability of the device in such a usage environment is improved.
第2図は本発明の第1の実施例を示す。この図
において、20は半導体製品パツケージ(半導体
装置)で、このパツケージはモリブデンなどの金
属板21とアルミナなどの環状セラミツク22と
がAgCu合金等の高融点ロウで接合され、そのセ
ラミツク22とキヤツプ23とがAuSn又は、
PbSn合金等の低融点ロウで接着されて密封され
た内部24において金属板21に半導体素子25
が取り付けて構成されている。26,27は内部
リード線で、28,29は外部リード線である。
FIG. 2 shows a first embodiment of the invention. In this figure, 20 is a semiconductor product package (semiconductor device), and this package consists of a metal plate 21 made of molybdenum or the like and an annular ceramic 22 made of alumina, which are bonded together using a high-melting solder such as AgCu alloy. and AuSn or
A semiconductor element 25 is attached to a metal plate 21 in an interior 24 which is sealed and bonded with a low melting point solder such as a PbSn alloy.
is installed and configured. 26 and 27 are internal lead wires, and 28 and 29 are external lead wires.
30はパツケージ20の接合面(授熱面)例え
ば金属板21の接合面に例えばロウ付けされて設
けられた突出部である。この突出部はスタツドの
ような棒状体をその一例として挙げることが出
来、以下これについて説明する。 Reference numeral 30 denotes a protrusion that is provided, for example, by brazing, on the joint surface (heat transfer surface) of the package 20, for example, the joint surface of the metal plate 21. An example of this protrusion is a rod-shaped body such as a stud, which will be described below.
このスタツド30を挿入し得る凹部(嵌合部)
31を支持部32に形成して成る放熱器に参照番
号33を付してある。そして放熱器33の支持部
32に放熱フイン34が設けられている。 Recessed portion (fitting portion) into which this stud 30 can be inserted
A radiator formed by forming 31 on the support portion 32 is designated by the reference number 33. A heat radiation fin 34 is provided on the support portion 32 of the heat radiator 33.
また、スタツド30を含めたパツケージ20の
接合面と凹部31を含めた放熱器33の接合面
(受熱面)との間には熱伝導性結合剤、例えばエ
ポキシ樹脂35を充填してこれら両者間に強固な
結合を生ぜしめている。 Furthermore, a thermally conductive binder such as epoxy resin 35 is filled between the bonding surface of the package 20 including the studs 30 and the bonding surface (heat receiving surface) of the radiator 33 including the recess 31. This creates a strong bond between the two.
従つて、上述のような結合態様を有する放熱構
造によれば、比較的に嵩高な構造で、しかも重量
を有する放熱構造に温度上昇、振動等が加えられ
たとしてもこれに耐え得るに十分な引張り強度を
有しているから、放熱構造本来の機能が維持され
ており、半導体製品の劣化乃至破壊が惹起される
虞は無くなる。 Therefore, the heat dissipation structure having the above-mentioned coupling mode has a relatively bulky and heavy heat dissipation structure that has sufficient strength to withstand temperature rises, vibrations, etc. Since it has tensile strength, the original function of the heat dissipation structure is maintained, and there is no risk of deterioration or destruction of the semiconductor product.
第3図は本発明の第2図の実施例を示し、セラ
ミツク22とキヤツプ23との間に密封空間を形
成するようにパツケージ20を形成し、その空間
内に半導体素子25を収容して金属板を除いたパ
ツケージ構成にし、そのセラミツク22にスタツ
ド30を設けた点が第2図の実施例と相違する。
その構成要素は同一なので、それらには第2図の
実施例と同一参照番号を付してその説明を省略す
る。 FIG. 3 shows the embodiment of the present invention shown in FIG. 2, in which a package 20 is formed to form a sealed space between a ceramic 22 and a cap 23, a semiconductor element 25 is housed in the space, and a metal This embodiment differs from the embodiment shown in FIG. 2 in that it has a package structure without a plate, and a stud 30 is provided on the ceramic 22.
Since its constituent elements are the same, they will be given the same reference numerals as those in the embodiment of FIG. 2 and their explanation will be omitted.
また、この実施例における作用効果も同様に得
られるものであることを述べてその説明を省略す
る。 Further, it will be stated that the effects of this embodiment can be obtained in the same manner, and the explanation thereof will be omitted.
第4図は第3図の実施例においてスタツド30
を2本設けた点において相違し、その他の構成は
同一なので、同一構成要素には同一参照番号を付
してその説明を省略する。 FIG. 4 shows the stud 30 in the embodiment of FIG.
The difference is that two are provided, and the other configurations are the same, so the same reference numerals will be given to the same components and their explanation will be omitted.
また、その作用効果はスタツド30の増設分に
相応して増大する外は同じである。 Further, the effects are the same except that they increase in proportion to the addition of the studs 30.
第5図は第4図の実施例における半導体素子2
5を放熱器33に対面する側に移設した点におい
て相違しその他の構成は同一なので、同一構成要
素には同一参照番号を付してその説明を省略す
る。また、その作用効果も第4図の実施例とほぼ
同じである。 FIG. 5 shows the semiconductor element 2 in the embodiment shown in FIG.
5 is moved to the side facing the heat radiator 33, and the other configurations are the same, so the same reference numerals will be given to the same components and the explanation thereof will be omitted. Further, its operation and effect are almost the same as the embodiment shown in FIG.
以上の説明から明らかなように本発明によれ
ば、パツケージ熱伝導性支持材と放熱器との間に
熱伝導性及び機械的強度を増大せしめる結合構造
を設けているので、この種従来のものより熱伝導
性及び機械的強度を格段に向上させることができ
る。従つて、温度上昇、振動等がパツケージに加
わつても、これに結合されている放熱構造は温度
上昇、振動に十分に耐え、従つて放熱構造本来の
機能は維持され得ることになり、半導体素子を熱
的に十分保護することが出来て、装置の信頼性の
向上となる。
As is clear from the above description, according to the present invention, a coupling structure is provided between the package thermally conductive support material and the radiator to increase thermal conductivity and mechanical strength. Thermal conductivity and mechanical strength can be significantly improved. Therefore, even if temperature rise, vibration, etc. are applied to the package, the heat dissipation structure connected to the package can sufficiently withstand the temperature rise and vibration, and therefore the original function of the heat dissipation structure can be maintained, and the semiconductor element can be sufficiently thermally protected, improving the reliability of the device.
第1図は本発明の原理構成図、第2図乃至第5
図はそれぞれ本発明の各実施例放熱構造を示す
図、第6図は従来パツケージの放熱構造を示す図
である。
第1図乃至第5図において、20は半導体製品
パツケージ、21,22は熱伝導性支持材、25
は半導体素子、30は突出部、31は凹部、33
は放熱器、35は熱伝導性結合剤である。
Figure 1 is a diagram of the principle configuration of the present invention, Figures 2 to 5
The figures each show the heat dissipation structure of each embodiment of the present invention, and FIG. 6 shows the heat dissipation structure of a conventional package. 1 to 5, 20 is a semiconductor product package, 21 and 22 are thermally conductive support materials, and 25
is a semiconductor element, 30 is a protrusion, 31 is a recess, 33
is a heat sink, and 35 is a thermally conductive binder.
Claims (1)
を熱伝導可能に固着して気密封止したパツケージ
20の該熱伝導性支持材21の外側授熱面及び該
外側授熱面に設けられた熱伝導性の突出部30の
授熱面と、 前記外側授熱面に対面させられた放熱器33の
受熱面及び前記突出部30を挿入した放熱器33
の嵌合部31の受熱面との間を熱伝導性結合剤3
5で結合して成ることを特徴とする半導体装置。[Claims] 1. Semiconductor element 25 on the inner surface of thermally conductive support material 21
an outer heat transfer surface of the thermally conductive support material 21 of the package 20 which is fixed and hermetically sealed in a heat transfer manner, and a heat transfer surface of the heat conductive protrusion 30 provided on the outer heat transfer surface; The heat receiving surface of the radiator 33 facing the outer heat transfer surface and the radiator 33 into which the protrusion 30 is inserted.
A thermally conductive binder 3 is connected between the heat receiving surface of the fitting part 31 of
A semiconductor device characterized in that it is formed by combining 5.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180237A JPS5882550A (en) | 1981-11-10 | 1981-11-10 | Heat radiating structure of heat sink |
| EP82305961A EP0079238B1 (en) | 1981-11-10 | 1982-11-09 | Semiconductor devices provided with heat-dissipating means |
| DE8282305961T DE3278321D1 (en) | 1981-11-10 | 1982-11-09 | Semiconductor devices provided with heat-dissipating means |
| IE2681/82A IE54087B1 (en) | 1981-11-10 | 1982-11-10 | Semiconductor devices provided with heat-dissipating means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180237A JPS5882550A (en) | 1981-11-10 | 1981-11-10 | Heat radiating structure of heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5882550A JPS5882550A (en) | 1983-05-18 |
| JPS6231830B2 true JPS6231830B2 (en) | 1987-07-10 |
Family
ID=16079760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56180237A Granted JPS5882550A (en) | 1981-11-10 | 1981-11-10 | Heat radiating structure of heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5882550A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0425129U (en) * | 1990-06-26 | 1992-02-28 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553617A (en) * | 1978-06-21 | 1980-01-11 | Hitachi Ltd | Metallic base for hybrid integrated circuit |
-
1981
- 1981-11-10 JP JP56180237A patent/JPS5882550A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0425129U (en) * | 1990-06-26 | 1992-02-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5882550A (en) | 1983-05-18 |
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