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JPS6233682B2 - - Google Patents
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JPS6233682B2 - - Google Patents

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Publication number
JPS6233682B2
JPS6233682B2 JP5994379A JP5994379A JPS6233682B2 JP S6233682 B2 JPS6233682 B2 JP S6233682B2 JP 5994379 A JP5994379 A JP 5994379A JP 5994379 A JP5994379 A JP 5994379A JP S6233682 B2 JPS6233682 B2 JP S6233682B2
Authority
JP
Japan
Prior art keywords
weight
insulating layer
powder
composition
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5994379A
Other languages
Japanese (ja)
Other versions
JPS55151707A (en
Inventor
Masanori Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5994379A priority Critical patent/JPS55151707A/en
Publication of JPS55151707A publication Critical patent/JPS55151707A/en
Publication of JPS6233682B2 publication Critical patent/JPS6233682B2/ja
Granted legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】 本発明は多層厚膜回路形成等に用いられる絶縁
層焼成ペースト用粉末状無機組成物に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a powdery inorganic composition for an insulating layer firing paste used for forming multilayer thick film circuits and the like.

従来多層厚膜回路等を製造する最も一般的な方
法は、アルミナ等のセラミツクス基板に金
(Au),銀(Ag),白金(Pt),パラジウム
(Pd),タングステン(W),モリブデン(Mo)
およびこれらの合金からなる導体層焼成ペースト
を用いて導体回路を印刷し、これを炉に入れて焼
成し導体回路を形成したり、あるいはまたメツキ
法により導体回路を形成し、次にこれら導体回路
と第2層導体回路とを絶縁する絶縁層を形成する
ために絶縁層焼成ペーストを塗布し炉に入れて焼
成して絶縁層を積層する方法を用いている。この
場合、絶縁層焼成ペーストの塗布に際しては、第
1層導体回路と第2層導体回路を結ぶ接続孔を残
す必要がある。そして塗布した絶縁層焼成ペース
トの層は再び炉に入れて焼成して固着させ塗布に
際して期待したとおりの形状を有する絶縁層を形
成する。次にこの絶縁層面の接続孔に導体層焼成
ペーストがつまるように第2層導体回路を形成し
焼成固着させる。このようにして必要に応じて第
3相,第4層の導体回路を同じ方法で形成し、用
途に応じ最上部層にIC,あるいはLSIを接続する
などして所望の多層電子回路を実装していた。
Conventionally, the most common method for manufacturing multilayer thick film circuits, etc. is to deposit gold (Au), silver (Ag), platinum (Pt), palladium (Pd), tungsten (W), molybdenum (Mo) on a ceramic substrate such as alumina. )
Then, a conductor circuit is printed using a conductor layer firing paste made of these alloys, and this is placed in a furnace and fired to form a conductor circuit, or a conductor circuit is formed by a plating method, and then these conductor circuits are printed. In order to form an insulating layer that insulates the conductor circuit and the second layer conductor circuit, a method is used in which an insulating layer firing paste is applied, placed in a furnace, and fired to laminate the insulating layer. In this case, when applying the insulating layer firing paste, it is necessary to leave a connection hole connecting the first layer conductor circuit and the second layer conductor circuit. The applied layer of insulating layer firing paste is then placed in the oven again to be fired and fixed to form an insulating layer having the expected shape upon application. Next, a second layer conductor circuit is formed so that the connection hole in the insulating layer is filled with the conductor layer firing paste, and is fired and fixed. In this way, the third phase and fourth layer conductor circuits are formed using the same method as necessary, and a desired multilayer electronic circuit is mounted by connecting an IC or LSI to the top layer depending on the application. was.

これら多層回路形成に必要な絶縁層は、比較的
低温度で緻密に焼結でき、ピンホールが少ないこ
と、耐酸性、(導体回路をメツキ法で形成する場
合特に要求される),高耐電圧,低熱抵抗,低誘
電率,等々の要求を兼ね備えていることが強く要
望されている。従来こうして目的に用いられてき
た絶縁層焼成ペーストは、一般的に無機物として
結晶化ガラスが用いられ、この結晶化ガラスを粉
末化したガラス粉末をバインダー例えばエチルセ
ルローズ,ポリビニルブチラール等を溶剤例えば
ブチルカルビトールアセテート,テルピネオール
に溶解させたビヒクル中に分散混練したものであ
つた。しかし、結晶化ガラスのみを用いた従来の
絶縁層焼成ペーストは再加熱によつて結晶化して
絶縁層を形成するはずなのであるが、十分な結晶
化が得られないことも多く、かかるときは耐酸性
に乏しく緻密化も不充分である。また熱抵抗値が
アルミナ(Al2O3),スピネル(MgO・Al2O3)等
に比較して大きい等々の欠点があつた。
The insulating layers necessary for forming these multilayer circuits can be sintered densely at relatively low temperatures, have few pinholes, are acid resistant (especially required when forming conductor circuits by the plating method), and have high withstand voltage. , low thermal resistance, low dielectric constant, and other requirements are strongly desired. The insulating layer firing paste that has been conventionally used for this purpose generally uses crystallized glass as an inorganic substance, and combines glass powder obtained by pulverizing this crystallized glass with a binder such as ethyl cellulose or polyvinyl butyral and a solvent such as butyl carbyl. It was dispersed and kneaded in a vehicle in which tall acetate and terpineol were dissolved. However, although conventional insulating layer firing pastes using only crystallized glass are supposed to crystallize and form an insulating layer by reheating, sufficient crystallization is often not achieved, and when this occurs, acid-resistant It lacks properties and densification is insufficient. It also had drawbacks such as a higher thermal resistance value compared to alumina (Al 2 O 3 ), spinel (MgO.Al 2 O 3 ), etc.

本発明の目的は、これらの欠点を除去したすな
わち、緻密化に優れ、ピンホールが少なく,熱抵
抗が小さく,耐電圧、及び耐酸性にすぐれた絶縁
層焼成ペースト用の粉末状無機組成物を提供する
ことにある。
The purpose of the present invention is to provide a powdered inorganic composition for an insulating layer firing paste that eliminates these drawbacks, that is, has excellent densification, few pinholes, low thermal resistance, and excellent voltage resistance and acid resistance. It is about providing.

本発明によれば、1〜8m2/gの比表面積を有
する粉末状のガラス(以下簡単の為ガラス粉末と
いう)を30〜70重量部及び合算して100重量部と
なす残部を0.8〜9.5m2/gの比表面積を有する粉
末状のセラミツクス(以下簡単の為セラミツクス
粉末という)として混合したものであり、ビヒク
ル中に分散させてペースト状となし塗布,焼成を
経て絶縁層を形成するための粉末無機組成物であ
つて、前記ガラス粉末がその原料組成を酸化物に
換算表記したときSiO210〜80重量%,PbO2〜55
重量%,B2O33〜35重量%,CaO0.2〜12重量%,
MgO0.2〜12重量%,BaO0.1〜10重量%,Al2O30
〜20重量%,Li2O0.1〜5重量%,NaO0.1〜5重
量%,K2O0.1〜5重量%,TiO20.1〜5重量%,
ZrO20.1〜5重量%,ZnO0.1〜5重量%の範囲の
無機酸化物をその原料組成とし且つ前記無機酸化
物中の少なくともSiO2B2O3,PbO,Na2Oの4種
は必須構成組成として含むものであり、前記セラ
ミツクス粉末がその原料組成を酸化物に換算表記
したときAl2O3,MgO・Al2O3,Al2O3・SiO2
3Al2O3・SiO2,MgO・SiO2,ZnO・Al2O3と表わ
せる各組成の組から選ばれた少くとも1組以上の
無機酸化物の組を原料組成として含むものである
こと、特徴とする絶縁層焼成ペースト用粉末状無
機組成物を得る。
According to the present invention, 30 to 70 parts by weight of powdered glass having a specific surface area of 1 to 8 m 2 /g (hereinafter referred to as glass powder for simplicity) and 0.8 to 9.5 parts by weight of the remaining part to make 100 parts by weight. It is a mixture of powdered ceramics (hereinafter referred to as ceramic powder for simplicity) with a specific surface area of m 2 /g, and it is dispersed in a vehicle to form a paste, which is then applied and fired to form an insulating layer. is a powdered inorganic composition in which the glass powder contains 10 to 80% by weight of SiO 2 and 55 to 55% by weight of SiO 2 when the raw material composition is expressed in terms of oxides.
Weight%, B2O3 3-35 % by weight, CaO0.2-12% by weight,
MgO0.2 ~ 12wt%, BaO0.1~10wt%, Al2O30
~20% by weight, Li2O0.1 ~5% by weight, NaO0.1~5% by weight, K2O0.1 ~ 5% by weight, TiO2 0.1 ~5% by weight,
Its raw material composition is an inorganic oxide in the range of 0.1 to 5% by weight of ZrO 2 and 0.1 to 5% by weight of ZnO, and at least four types of SiO 2 B 2 O 3 , PbO, and Na 2 O in the inorganic oxide are It is included as an essential constituent composition, and when the raw material composition of the ceramic powder is expressed in terms of oxides, it contains Al 2 O 3 , MgO・Al 2 O 3 , Al 2 O 3・SiO 2 ,
3The raw material composition contains at least one inorganic oxide group selected from each composition group represented by Al 2 O 3 ・SiO 2 , MgO ・SiO 2 , ZnO ・Al 2 O 3 A powdered inorganic composition for insulating layer firing paste is obtained.

このような本発明の絶縁層焼成ペースト用粉末
状無機組成物は、例えば次のような材料及び方法
によつて製造し得る。即ちガラス粉末は、各種の
原料粉末を所望の組成となるように配合し一旦熔
融してガラス状になしたものを、例えばアルミナ
製ボールミルでアルコールを分散媒として湿式粉
砕し所望の粒度に調整したものが適当である。
Such a powdered inorganic composition for insulating layer firing paste of the present invention can be manufactured using, for example, the following materials and methods. That is, glass powder is obtained by blending various raw material powders to a desired composition, melting the mixture into a glassy state, and then wet-pulverizing the powder in an alumina ball mill using alcohol as a dispersion medium to obtain a desired particle size. things are appropriate.

又セラミツクス粉末は、各種の原料粉末を所望
の組成となるように均質に配合し予焼して固相反
応させてセラミツクス化した粉末もしくはこのよ
うにして得たセラミツク粉末の比表面積が大き過
ぎるときはこれを粉砕して所望の比表面積となる
ように調整したものが適当である。そしてこれら
のガラス粉末及びセラミツクス粉末を所望の配合
比となるように秤量し、例えばアルコールを分散
媒として湿式混合するなどして均質なガラス粉末
とセラミツクス粉末との混合粉末即ち本発明の絶
縁層焼成ペースト用粉末状無機組成物を得る。な
おこの際用いられる原料粉末は明確化のため酸化
物に換算表記したが、鉱物,酸化物,炭酸塩,水
酸化物等々の形で通常の方法により使用されるの
は勿論である。
In addition, ceramic powder is a powder obtained by homogeneously blending various raw material powders to a desired composition, pre-firing, and solid-phase reaction to form a ceramic, or when the specific surface area of the ceramic powder obtained in this way is too large. It is appropriate to grind this and adjust it to a desired specific surface area. Then, these glass powder and ceramic powder are weighed to have a desired blending ratio, and wet-mixed using alcohol as a dispersion medium, for example, to form a homogeneous mixed powder of glass powder and ceramic powder, that is, the insulating layer firing of the present invention. A powdered inorganic composition for paste is obtained. Note that the raw material powder used in this case is expressed in terms of oxide for clarity, but it goes without saying that it can be used in the form of minerals, oxides, carbonates, hydroxides, etc. in the usual manner.

かくして得られた本発明の粉末状無機組成物に
ビヒクルを添加して例えば三本ロールまたはメノ
ウ製擂潰機等を用いて充分に混練し、均一に分散
させて所望の絶縁層焼成ペーストを得る。なお本
発明においてピヒクルの成分については何ら限定
を要しない。バインダーとしてはエチルセルロー
ス,ポリビニルブチラール等々の通常用いられて
いるもので充分であり、溶媒を用いて5〜15重量
%溶液とすると好都合である。溶媒としては、β
またはαテルピネオール、n―ブチルカルビトー
ル、ブチルカルビトールアセテート、エチルカル
ビトールアセテート等々を単独または2種以上混
合して用いるとよい。
A vehicle is added to the thus obtained powdered inorganic composition of the present invention, and the mixture is thoroughly kneaded using, for example, a three-roll or agate crusher, and is uniformly dispersed to obtain the desired insulating layer baking paste. . In the present invention, there are no restrictions on the components of the vehicle. As the binder, commonly used binders such as ethyl cellulose and polyvinyl butyral are sufficient, and it is convenient to form a 5 to 15% by weight solution using a solvent. As a solvent, β
Alternatively, α-terpineol, n-butyl carbitol, butyl carbitol acetate, ethyl carbitol acetate, etc. may be used alone or in combination of two or more.

次に本発明において絶縁層焼成ペースト用粉末
状無機組成物のガラス粉末とセラミツクス粉末と
の配合比,ガラス粉末及びセラミツクス粉末の比
表面積(粒度),更にはガラス粉末及びセラミツ
クス粉末の原料組成について各々の範囲を特許請
求の範囲に記した如く限定した理由について述べ
る。
Next, in the present invention, we will discuss the blending ratio of glass powder and ceramic powder in the powdered inorganic composition for insulating layer firing paste, the specific surface area (particle size) of glass powder and ceramic powder, and the raw material composition of glass powder and ceramic powder. The reason for limiting the scope as stated in the claims will be explained below.

まず、本発明に係る絶縁層焼成ペースト用粉末
状無機組成物の主成分の一つであるガラス粉末の
組成について述べれば、 (1) SiO210〜80重量%,B2O33〜35重量%,
PbO2〜55重量%,Na2O0.1〜5重量%は必須
の主成分でその組成比がガラスの性質を大きく
左右する。しかし限定範囲内に納まるように組
成比を選ぶことで、ガラスの軟化温度,熱膨脹
係数,誘電率,耐酸性等の諸特性を満足すべき
調和をもつて実現することが可能となり、結果
として絶縁層焼成ペーストとして優れたものが
得られる。限定範囲外の組成を選ぶときは、例
えばPbO,B2O3の組成を増加させ過ぎると軟
化温度は大幅に低下し耐酸性も低下するので好
ましくない。
First, the composition of the glass powder, which is one of the main components of the powdered inorganic composition for insulating layer firing paste according to the present invention, is as follows: (1) SiO 2 10-80% by weight, B 2 O 3 3-35% weight%,
PbO2 - 55% by weight and Na 2 O 0.1 - 5% by weight are essential main components, and their composition ratio greatly influences the properties of the glass. However, by selecting the composition ratio within a limited range, it is possible to achieve a satisfactory balance of various properties such as glass softening temperature, coefficient of thermal expansion, dielectric constant, and acid resistance, resulting in insulation. An excellent layered paste can be obtained. When selecting a composition outside the limited range, for example, if the composition of PbO and B 2 O 3 is increased too much, the softening temperature will be significantly lowered and the acid resistance will also be lowered, which is not preferable.

(2) Al2O3を0〜20重量%添加する効果は耐酸
性,耐水性が向上し塗布,焼成過程における形
状保持特性が向上することである。しかし限定
範囲を超えれば粘度が増加し過ぎ、又ガラス化
が困難となる。
(2) The effect of adding 0 to 20% by weight of Al 2 O 3 is that acid resistance and water resistance are improved, and shape retention properties during coating and firing processes are improved. However, if it exceeds the limited range, the viscosity will increase too much and vitrification will become difficult.

(3) Li2O0.1〜5重量%,Na2O0.1〜5重量%,
K2O0.1〜5重量%重量%等のアルカリ金属酸
化物は限定範囲内にあればガラスの軟化点を適
度に制御するが、限定範囲を超えれば耐酸性が
劣化し好ましくない。
(3) Li 2 O 0.1-5% by weight, Na 2 O 0.1-5% by weight,
If the alkali metal oxide, such as 0.1 to 5% by weight of K 2 O, is within a limited range, it will appropriately control the softening point of the glass, but if it exceeds the limited range, the acid resistance will deteriorate, which is undesirable.

(4) MgO0.2〜12重量%,CaO0.2〜12重量%,
BaO0.1〜10重量%,のアルカリ金属酸化物
や、その余のTiO20.1〜5重量%,ZrO20.1〜5
重量%,ZnO0.1〜5重量%は、絶縁層形成の
際の再加熱によつてガラスの一部を結晶化させ
るのに寄与し、また緻密化に効果がある。しか
し限定範囲外では粘度が高くなり過ぎたり、緻
密化を阻害したりする。
(4) MgO0.2-12% by weight, CaO0.2-12% by weight,
Alkali metal oxide of BaO 0.1-10% by weight, and the rest TiO 2 0.1-5% by weight, ZrO 2 0.1-5
% by weight, ZnO of 0.1 to 5% by weight contributes to crystallizing a part of the glass by reheating during the formation of the insulating layer, and is also effective in densification. However, outside the limited range, the viscosity may become too high or densification may be inhibited.

絶縁層焼成ペースト用粉末状無機組成物のも
う一つの主成分であるセラミツク2粉末につい
て述べれば、 (5) セラミツクスの組成として、その原料組成を
酸化物に換算表記したときAl2O3,MgO・
Al2O3,Al2O3・SiO2,3Al2O3・SiO2,MgO・
SiO2,ZnO・Al2O3と表わせる各組成の組から
選んだ少くとも1組以上の無機酸化物の組を原
料組成として含むべきである。もしこれら各組
以外の組成の組を選ぶときは、熱抵抗がより大
きくなつたり、誘電体損失が大きくなつたり、
緻密な絶縁層が得られなかつたり、所望する各
特性間のバランスが崩れたりする。
Regarding ceramic 2 powder, which is another main component of the powdered inorganic composition for insulating layer firing paste, (5) As for the composition of ceramics, when the raw material composition is expressed in terms of oxides, it is Al 2 O 3 , MgO・
Al 2 O 3 , Al 2 O 3・SiO 2 , 3Al 2 O 3・SiO 2 , MgO・
The raw material composition should include at least one inorganic oxide group selected from the composition groups represented by SiO 2 and ZnO.Al 2 O 3 . If you choose a composition other than these, the thermal resistance may become larger, the dielectric loss may become larger,
A dense insulating layer may not be obtained, or the balance between desired characteristics may be lost.

更にガラス粉末とセラミツクス粉末との配合
については、 (6) ガラス粉末を30〜70重量部として合算して
100重量部となす残部をセラミツクス粉末とす
る本発明の限定範囲内で適宜に選ぶことにより
緻密性があり、熱抵抗はより小さく,耐電圧,
耐酸性,誘電率等々の絶縁層として優れたもの
が得られる。しかしセラミツク粉末が限定範囲
を超えれば、800〜1000℃の比較的低い温度で
は緻密な絶縁層は得られず、ピンホールが増加
したり,耐酸性が劣化したりする。また限定範
囲未満では絶縁層は緻密ではあるが、表面は発
泡し易くなつたり,導体との密着性が低下した
り,熱抵抗がより大きくなつたりして好ましく
ない。
Furthermore, regarding the blending of glass powder and ceramic powder, (6) Add 30 to 70 parts by weight of glass powder.
By appropriately selecting 100 parts by weight and the remainder being ceramic powder within the limited range of the present invention, it is possible to achieve denseness, lower thermal resistance, withstand voltage,
An insulating layer with excellent acid resistance, dielectric constant, etc. can be obtained. However, if the ceramic powder exceeds the specified range, a dense insulating layer will not be obtained at relatively low temperatures of 800 to 1000°C, and pinholes will increase and acid resistance will deteriorate. Further, if it is less than the limited range, although the insulating layer is dense, the surface tends to foam, the adhesion with the conductor decreases, and the thermal resistance increases, which is not preferable.

更に又、ガラス粉末及びセラミツクス粉末の
粒度についていえば (7) セラミツクス粉末の比表面積は0.8〜9.5m2
grの範囲が、又ガラス粉末の比表面積は1.0〜
8.0m2/grの範囲がそれぞれ適当であり、この
範囲の粉末粒度のものを適宜に選んで組合せる
ことにより緻密なピンホールのより少なく導体
との密着強度の大きい絶縁層として好適なもの
が得られる。しかし、限定範囲外では絶縁層の
ピンホールが増加したり、表面粗度が大きくな
つたり、800〜1000℃での焼結が不十分となつ
たりして好ましくない。
Furthermore, regarding the particle size of glass powder and ceramic powder, (7) the specific surface area of ceramic powder is 0.8 to 9.5 m 2 /
The range of gr, and the specific surface area of glass powder is 1.0~
A range of 8.0 m 2 /gr is suitable for each, and by appropriately selecting and combining powder particles in this range, a suitable insulating layer with fewer dense pinholes and high adhesion strength to the conductor can be obtained. can get. However, outside the limited range, pinholes in the insulating layer increase, surface roughness increases, and sintering at 800 to 1000°C becomes insufficient, which is not preferable.

以上、本発明に付した各種の限定事由について
説明をしたが、その限定範囲もその境界において
それのもたらす効果が飛躍的に変化するという性
質のものではない。当然ながら相対的なものであ
り、製造技術上の容易さや原材料の純度と価格と
のバランス等々、本発明を実施するときの情勢の
変化に伴つて適宜ゆらぐ部分があることは致し方
のないことである。例えば、Al2O3という表現で
流通する原材料をとつてみても、その純度や形態
には様々のものがある。本発明者が種々のAl2O3
を用いて本発明を実施したが、真に結果の良いも
のもあれば一方ではあまり感心できないものもあ
るというのが実情である。これらのAl2O3の中で
セラミツクスの原料に用いて充分満足すべき結果
を得たものについて精密に分析してみたところ、
若干の不純物を含んでいた。その一例を揚げてみ
れば、SiO20.03〜1.0重量%,MgO0.03〜1.0重量
%,CaO0.03〜0.5重量%,Fe2O30.01〜0.1重量
%,Na2O0.01〜0.5重量%であつた。これら微量
の不純物は、焼結を低い温度で良好に行うのに有
効のようである。本発明の構成原材料中、かなり
多量に使用するものについてはこうした不純物を
考慮してそれらの配合比を決定する必要が出てく
る。しかしこれらの不純物を含有する構成元素そ
のものが全体にとつては微量にしか添加する必要
のないものであるときには、その絶対量は微量の
自乗の桁程度に極く極く微量になり大した問題に
はならない。こうした実情に対処するため、本発
明においてはこれらの微量の不純物については一
応Al2O3などという表現の中にゆらぎとして含ま
せて表現してある。他の原材料についても同様で
ある。従つて、本発明において特に微量添加する
ことを要求している原材料の算定にあたつては、
一応他の原材料中に不純物としてどの程度含まれ
ているかを知つた上で算出し、実施して欲しい。
Although various reasons for limiting the present invention have been explained above, the effects brought about by the limiting range do not change dramatically at the boundaries thereof. Naturally, it is a relative matter, and it is inevitable that there will be some fluctuations as circumstances change when implementing the present invention, such as the ease of production technology, the balance between purity and price of raw materials, etc. be. For example, when looking at raw materials distributed under the expression Al 2 O 3 , there are various purity and forms. The inventor has developed various Al 2 O 3
The present invention was carried out using the following methods, but the reality is that some of them yielded truly good results, while others were less than impressive. Among these Al 2 O 3 , we conducted a precise analysis of those that obtained sufficiently satisfactory results when used as raw materials for ceramics.
It contained some impurities. For example, SiO 2 0.03-1.0% by weight, MgO 0.03-1.0% by weight, CaO 0.03-0.5% by weight, Fe 2 O 3 0.01-0.1% by weight, Na 2 O 0.01-0.5% by weight. It was %. These trace amounts of impurities seem to be effective in sintering well at low temperatures. Among the raw materials constituting the present invention, for those used in considerably large amounts, it is necessary to determine the blending ratio of the raw materials in consideration of such impurities. However, when the constituent elements containing these impurities themselves need to be added in only trace amounts to the whole, the absolute amount becomes extremely small, on the order of the square of a trace amount, and this poses a serious problem. It won't be. In order to cope with this situation, in the present invention, these trace amounts of impurities are included in the expression Al 2 O 3 etc. as fluctuations. The same applies to other raw materials. Therefore, when calculating the raw materials that are particularly required to be added in small amounts in the present invention,
I would like to know how much of the impurities are contained in other raw materials before calculating the amount.

本発明の実施態様は広く、その全てを説明し尽
くことは困難であるので、以下代表的な実施の一
例を具体的に挙げ、それに基い本発明の一端を詳
細に説明する。
Since the embodiments of the present invention are wide-ranging and it is difficult to fully explain them all, one typical embodiment will be specifically mentioned below, and one part of the present invention will be explained in detail based on the example.

実施例 1 SiO264.9重量%,B2O36.8重量%,PbO16.6重
量%,Na2O2.7重量%,K2O2.17重量%,
MgO0.41重量%,CaO5.38重量%,BaO0.1重量
%,TiO20.21重量%,ZrO20.93重量%の組成を有
するガラス粉末を通常の方法で作製し、更にアル
ミナボールミルを用いアルコールを分散媒として
16時間湿式粉砕した。
Example 1 SiO2 64.9% by weight, B2O3 6.8 % by weight, PbO16.6% by weight, Na2O2.7 % by weight, K2O2.17 % by weight,
A glass powder having a composition of 0.41% by weight of MgO, 5.38% by weight of CaO, 0.1% by weight of BaO, 0.21% by weight of TiO 2 and 0.93% by weight of ZrO 2 was prepared by a conventional method, and then alcohol was added using an alumina ball mill. as a dispersion medium
Wet milling was carried out for 16 hours.

これを篩で整粒した後アルコールを乾燥させ比
表面積2.68m2/grの粒度を持つガラス粉末を得
た。セラミツクス粉末はSiO20.28重量%,
NaO0.05重量%,MgO0.3重量%,CaO0.03重量
%,Fe2O30.05重量%の不純物を含む純度99.69%
のAl2O3で比表面積2.58m2/grの粒度の粉末を用
いた。ガラス粉末とセラミツクス粉末との配合比
率はガラス粉末54重量部,セラミツクス粉末46重
量部とした。各々の粉末を所定量秤量し、アルミ
ナボールミルで分散媒としてアルコールを用い3
時間混合した後、アルコールを乾燥させ均質なガ
ラスセラミツク混合粉末を得た。ビヒクルは、エ
チルセルロース15重量%溶液とし溶媒にブチルカ
ルビトールアセテートを用いた。ヒビクル30重量
部,ガラスセラミツク混合粉末70重量部を三本ロ
ールを用いて混練し粉末をビヒクルに均一に分散
させペースト化した。得られた絶縁ペーストの評
価には、Al2O396%基板にAuをメタライズして下
部電極とし、この上に本発明に調製した絶縁層焼
成ペーストをスクリーンで塗布乾燥した後、930
℃で10分間電気炉で焼結したものを用いた。焼結
時の雰囲気は空気中で、焼結サイクル(昇温ピー
ク温度,降温,炉外取り外し)は60分であつた。
絶縁層焼成ペーストの塗布乾燥,焼結を2度繰り
返し膜厚40μmの絶縁層を得た。
This was sized with a sieve and then dried with alcohol to obtain a glass powder having a particle size with a specific surface area of 2.68 m 2 /gr. Ceramics powder contains SiO 2 0.28% by weight,
Purity 99.69% including impurities of 0.05% by weight NaO, 0.3% by weight MgO, 0.03% by weight CaO, 0.05% by weight Fe 2 O 3
A powder with a particle size of Al 2 O 3 and a specific surface area of 2.58 m 2 /gr was used. The blending ratio of glass powder and ceramic powder was 54 parts by weight of glass powder and 46 parts by weight of ceramic powder. Weigh a predetermined amount of each powder, and use alcohol as a dispersion medium in an alumina ball mill.
After mixing for a period of time, the alcohol was dried to obtain a homogeneous glass-ceramic mixed powder. The vehicle was a 15% by weight solution of ethyl cellulose, and butyl carbitol acetate was used as the solvent. 30 parts by weight of vehicle and 70 parts by weight of glass-ceramic mixed powder were kneaded using three rolls, and the powder was uniformly dispersed in the vehicle to form a paste. The obtained insulating paste was evaluated by metallizing Au on a 96% Al 2 O 3 substrate to form a lower electrode, applying the insulating layer firing paste prepared according to the present invention on top of this using a screen, drying it, and then applying a 930° C.
The material was sintered in an electric furnace at ℃ for 10 minutes. The atmosphere during sintering was air, and the sintering cycle (heating peak temperature, temperature cooling, removal from the furnace) was 60 minutes.
Application, drying, and sintering of the insulating layer firing paste were repeated twice to obtain an insulating layer with a thickness of 40 μm.

得られた絶縁層の表面にAuペーストを塗布乾
燥し930℃で8分間焼成して上部電極とした。こ
れを1MHzで測定した。誘電率は7.8,誘電損失は
0.0025,絶縁抵抗は2.3×1012Ωcm(at100VDC)
であつた。ピンホールの測定は、絶縁層中を流れ
る微弱なリーク電流を測定するとピンホールの多
い場合リーク電流が増加し、逆にピンホールが少
ない場合リーク電流は減少することを利用した。
方法は先ず、前記した本実施例と同じ条件で
Al2O3基板上に導体(Au,Ag/Pb,Ag/Pt等)
をメタライズしその上に絶縁層の膜厚40μmを形
成し、メタライズの一部を電極とする。これを
NaC15重量%水溶液(電解液)にも浸漬し、もう
片方の電極は銅板にし同水溶液に浸しDC10Vを
印加してリーク電流を測定した。リーク電流は
240μAであつた。
Au paste was applied to the surface of the obtained insulating layer, dried, and baked at 930° C. for 8 minutes to obtain an upper electrode. This was measured at 1MHz. The dielectric constant is 7.8, and the dielectric loss is
0.0025, insulation resistance is 2.3×10 12 Ωcm (at100VDC)
It was hot. The measurement of pinholes takes advantage of the fact that when measuring the weak leakage current flowing in an insulating layer, the leakage current increases when there are many pinholes, and conversely, the leakage current decreases when there are few pinholes.
The method was first carried out under the same conditions as in this example described above.
Conductor (Au, Ag/Pb, Ag/Pt, etc.) on Al 2 O 3 substrate
A 40-μm-thick insulating layer is formed on it, and a part of the metallization is used as an electrode. this
It was also immersed in a 15% by weight NaC aqueous solution (electrolyte), and the other electrode was a copper plate, immersed in the same aqueous solution, and DC10V was applied to measure leakage current. The leakage current is
It was 240μA.

ビヒクルの入らないガラスセラミツクス粉末を
800Kg/cm2で加圧成形しこれを電気炉で930℃―10
分間焼結して直径20mm厚さ1mmの焼結体を得た。
これを測定し、熱伝導率0.02cal/cm・℃・secの
値を得た。またこうして導体上に形成した絶縁層
のの表面粗度は5μmと小さかつたが、導体との
密着強度は十分であつた。
Vehicle-free glass ceramic powder
Pressure molded at 800Kg/cm 2 and then heated at 930℃-10 in an electric furnace.
Sintering was performed for a minute to obtain a sintered body with a diameter of 20 mm and a thickness of 1 mm.
This was measured and a value of thermal conductivity of 0.02 cal/cm·°C·sec was obtained. Although the surface roughness of the insulating layer thus formed on the conductor was as small as 5 μm, the adhesion strength to the conductor was sufficient.

実施例 2 SiO259.3重量%,B2O36.2重量%,PbO15.3重
量%,Al2O38.4重量%,Na2O2.2重量%,K2O2.0
重量%,MgO0.34重量%,CaO4.7重量%,
BaO0.17重量%,Fe2O30.29重量%,TiO20.17重
量%,ZrO20.84重量%,ZnO0.09重量%組成比の
ガラスを比表面積2.54m2/grの状態に調製したも
のを50重量部と、SiO20.1重量%,Na2O0.05重量
%,MgO0.25重量%,CaO0.01重量%,
Fe2O30.08重量%の不純物を含んだ純度99.51%の
Al2O3を比表面積が1.95m2/gになるように粉末
化したセラミツクス粉末50重量部とを、実施例―
1と同じ方法,条件で混合,乾燥,ペースト化
し、絶縁層を形成して諸特性を測定した。その結
果、誘電率8.0,誘電損失0.0015,絶縁抵抗1.5×
1013Ωcm(at100VDC),リーク電流150μA,熱
伝導率0.018cal/cm・℃・secであつた。また絶
縁層の表面粗度は最大4.5μmで導体との密着強
度も良好であつた。
Example 2 SiO 2 59.3% by weight, B 2 O 3 6.2% by weight, PbO 15.3% by weight, Al 2 O 3 8.4% by weight, Na 2 O2.2% by weight, K 2 O2.0
Weight%, MgO0.34weight%, CaO4.7weight%,
Glass with a composition ratio of 0.17% by weight of BaO, 0.29% by weight of Fe 2 O 3 , 0.17% by weight of TiO 2 , 0.84% by weight of ZrO 2 and 0.09% by weight of ZnO was prepared with a specific surface area of 2.54 m 2 /gr. 50 parts by weight, SiO 2 0.1% by weight, Na 2 O 0.05% by weight, MgO 0.25% by weight, CaO 0.01% by weight,
Fe 2 O 3 99.51% pure with 0.08% impurities by weight
Example 50 parts by weight of ceramic powder prepared by pulverizing Al 2 O 3 to have a specific surface area of 1.95 m 2 /g
The mixture was mixed, dried, and made into a paste using the same method and conditions as 1. An insulating layer was formed and various properties were measured. As a result, dielectric constant 8.0, dielectric loss 0.0015, insulation resistance 1.5×
10 13 Ωcm (at 100 VDC), leakage current 150 μA, and thermal conductivity 0.018 cal/cm・℃・sec. Furthermore, the surface roughness of the insulating layer was 4.5 μm at maximum, and the adhesion strength to the conductor was also good.

実施例 3 SiO254.7重量%,B2O35.8重量%,PbO14.0重
量%,Al2O315.6重量%,Na2O2.0重量%,
K2O1.9重量%,MgO0.31重量%,CaO4.4重量
%,BaO0.16重量%,ZnO0.08重量%,TiO20.16
重量%,Fe2O30.26重量%,ZrO20.78重量%の組
成比のガラスを通常の方法で作製し、更にアルミ
ナボールミルを用いアルコールを分散媒として
24H湿式粉砕した。これを篩で整粒した後アルコ
ールを乾燥させ比表面積3.4m2/grのガラス粉末
に調製した。セラミツクス粉末はSiO21.25重量
%,Na2O0.02重量%,MgO1.18重量%,CaO0.68
重量%,Fe2O30.03重量%の不純物を含む純度
96.84%Al2O3粉末をガラス粉末のときと同じよう
にして作製し、比表面積2.56m2/gのセラミツク
ス粉末を得た。このガラス粉末55重量部とセラミ
ツクス粉末45重量部とを配合し、これを実施例―
1と同じ方法,条件で混合,乾燥,ペースト化し
て、絶縁層の形成を行い諸特性を測定した。その
結果、誘電率8.3,誘電損失0.0017,絶縁抵抗3.5
×1015Ωcm(at100VDC),リーク電流210μA,
熱伝導率0.0096cal/cm・℃・secであつた。また
絶縁層の表面粗度も小さく導体との密着性も良好
であつた。
Example 3 SiO 2 54.7% by weight, B 2 O 3 5.8% by weight, PbO 14.0% by weight, Al 2 O 3 15.6% by weight, Na 2 O 2.0% by weight,
K 2 O 1.9% by weight, MgO 0.31% by weight, CaO 4.4% by weight, BaO 0.16% by weight, ZnO 0.08% by weight, TiO 2 0.16
A glass with a composition ratio of 0.26% by weight of Fe 2 O 3 and 0.78% by weight of ZrO 2 was prepared by a normal method, and then alcohol was used as a dispersion medium using an alumina ball mill.
Wet milled for 24 hours. This was sized with a sieve and then dried with alcohol to prepare a glass powder with a specific surface area of 3.4 m 2 /gr. Ceramics powder contains 1.25% by weight of SiO 2 , 0.02% by weight of Na 2 O, 1.18% by weight of MgO, 0.68% by weight of CaO
% by weight, purity with impurities of Fe 2 O 3 0.03% by weight
A 96.84% Al 2 O 3 powder was prepared in the same manner as the glass powder to obtain a ceramic powder with a specific surface area of 2.56 m 2 /g. 55 parts by weight of this glass powder and 45 parts by weight of ceramic powder were blended, and this was used in the example -
The mixture was mixed, dried, and made into a paste using the same method and conditions as 1. An insulating layer was formed, and various properties were measured. As a result, dielectric constant 8.3, dielectric loss 0.0017, insulation resistance 3.5
×10 15 Ωcm (at100VDC), leakage current 210μA,
Thermal conductivity was 0.0096 cal/cm・℃・sec. Furthermore, the surface roughness of the insulating layer was small and the adhesion to the conductor was good.

実施例 4 ガラス粉末およびセラミツクス粉末組成および
組成比,比表面積等の諸条件を実施例―1と同様
になるように作製した。ガラス粉末とセラミツク
ス粉末との配合比率はセラミツクス粉末の量を35
重量部,40重量部,50重量部,60重量部と変化さ
せ、残部ガラス粉末として総計を100重量部にな
るように、実施例―1の方法,条件で調製した。
ビビクルは、バインダーとしてエチルセルロース
15重量%を用い溶媒β―テルピネオールに溶解し
たものを用いた。そして前記混合粉末70重量部を
ビヒクル30重量部に分散させ、三本ロールで十分
混練してペースト化した。
Example 4 Glass powder and ceramic powder were prepared under the same conditions as Example 1, such as the composition, composition ratio, and specific surface area. The blending ratio of glass powder and ceramic powder is 35% of the amount of ceramic powder.
It was prepared according to the method and conditions of Example 1, with the remaining glass powder being 100 parts by weight.
Bibicle uses ethylcellulose as a binder
A solution of 15% by weight in the solvent β-terpineol was used. Then, 70 parts by weight of the mixed powder was dispersed in 30 parts by weight of vehicle and thoroughly kneaded with three rolls to form a paste.

得られたペーストを既にAuメタライズされた
Al2O3基板上にスクリーン印刷し、乾燥後930℃
のピーク温度で10分間空気中で焼結して膜厚45μ
mの絶縁層を得た。更にこの絶縁層の表面にAu
ペーストを塗布,焼成しメタライズした。このよ
うにして得られた4種のサンプルを実施例―1と
同様の方法で諸特性を測定した。結果は誘電率
7.5〜8.9でセラミツク粉末の配合比率が大きくな
ると誘電率も大きくなる傾向を示した。誘電損失
は0.0012〜0.0025、絶縁抵抗は1.4×1011〜3.2×
1011Ωcmで大差なかつた。リーク電流,熱伝導率
の測定用サンプルは実施例―1の方法、条件で作
製した。測定した結果、リーク電流は130〜890μ
Aでセラミツクス粉末の配合比率に比例して大き
くなる傾向を示した。熱伝導率は0.0056〜
0.028cal/cm・℃・secでセラミツクス粉末の配
合比率の増大に伴い大きくなつている。また絶縁
層の表面粗度は小さく、導体との密着強度も十分
であつた。
The resulting paste was already Au metalized.
Screen printed on Al2O3 substrate and dried at 930℃
Sintered in air for 10 minutes at a peak temperature of 45μ
An insulating layer of m was obtained. Furthermore, Au is added to the surface of this insulating layer.
The paste was applied, fired, and metallized. Various properties of the four samples thus obtained were measured in the same manner as in Example-1. The result is the dielectric constant
As the blending ratio of ceramic powder increased between 7.5 and 8.9, the dielectric constant also tended to increase. Dielectric loss is 0.0012 to 0.0025, insulation resistance is 1.4×10 11 to 3.2×
There was no big difference at 10 11 Ωcm. Samples for measuring leakage current and thermal conductivity were prepared using the method and conditions of Example-1. As a result of measurement, the leakage current is 130~890μ
A showed a tendency to increase in proportion to the blending ratio of ceramic powder. Thermal conductivity is 0.0056~
It is 0.028 cal/cm・℃・sec and increases as the blending ratio of ceramic powder increases. Furthermore, the surface roughness of the insulating layer was small and the adhesion strength to the conductor was sufficient.

実施例 5 SiO264.9重量%,B2O36.8重量%,PbO16.6重
量%,Na2O2.7重量%,K2O2.17重量%,
MgO0.41重量%,CaO5.38重量%,BaO0.1重量
%,TiO20.21重量%,ZrO20.93重量%の組成比の
ガラスをアルコールを分散媒としてアルミナボー
ルミルで46H粉砕した。これを篩で整粒した後ア
ルコールを乾燥し比表面積6.4m2/gのガラス粉
末を得た。セラミツクス粉末としては、MgO・
Al2O3粉末を用い、比表面積3.5m2/grに調製して
用いた。ガラス粉末とセラミツクス粉末との配合
比率はセラミツクス粉末40重量部,45重量部,50
重量部と変化させ、残部をガラス粉末として総計
100重量部のガラスセラミツクス混合粉末を得
た。
Example 5 SiO2 64.9% by weight, B2O3 6.8 % by weight, PbO16.6% by weight, Na2O2.7 % by weight, K2O2.17 % by weight,
Glass having a composition ratio of 0.41% by weight of MgO, 5.38% by weight of CaO, 0.1% by weight of BaO, 0.21% by weight of TiO 2 and 0.93% by weight of ZrO 2 was ground for 46 hours in an alumina ball mill using alcohol as a dispersion medium. After sifting this with a sieve, alcohol was dried to obtain a glass powder with a specific surface area of 6.4 m 2 /g. As ceramic powder, MgO・
Al 2 O 3 powder was used and the specific surface area was adjusted to 3.5 m 2 /gr. The blending ratio of glass powder and ceramic powder is 40 parts by weight, 45 parts by weight, and 50 parts by weight of ceramic powder.
Change it to parts by weight, and add up the rest as glass powder.
100 parts by weight of glass-ceramics mixed powder was obtained.

粉末の混合,使用ビヒクル,ペースト化,塗
布,乾燥,焼結,絶縁層の形成,諸特性の測定等
は実施例―1と同様な方法,条件で実施した。そ
の結果は、誘電率7.6〜8.5,誘電損失0.0021〜
0.0032,絶縁抵抗1.6×1012〜4.5×1011Ωcm,リー
ク電流350〜580μA,熱伝導率0.0067〜
0.012cal/cm・℃・secであつた。また導体との
密着性も良好であつた。
Powder mixing, vehicle used, pasting, coating, drying, sintering, formation of an insulating layer, measurement of various properties, etc. were carried out in the same manner and under the same conditions as in Example-1. The results are dielectric constant 7.6~8.5, dielectric loss 0.0021~
0.0032, insulation resistance 1.6×10 12 ~ 4.5×10 11 Ωcm, leakage current 350 ~ 580 μA, thermal conductivity 0.0067 ~
It was 0.012 cal/cm・℃・sec. Furthermore, the adhesion to the conductor was also good.

実施例 6 ガラス粉末は、SiO255重量%,B2O36.8重量
%,PbO26.5重量%,NaO2.7重量%,K2O2.17重
量%,MgO0.41重量%,CaO5.38重量%,
BaO0.1重量%,TiO20.21重量%,ZrO20.93重量
%の組成比のガラスを作製し、アルミナボールミ
ルを用いアルコールを分散媒に32H粉砕し篩で整
粒した後アルコールを乾燥し比表面積4.7m2/g
のものを調製した。セラミツクス粉末としては
Al2O3・SiO2,3Al2O3・SiO2,MgO,SiO2
ZnO・Al2O3の4通りとし、それぞれを比表面積
3.1〜3.6m2/gの粒度に調製して用いた。ガラス
粉末とセラミツクス粉末との配合比率は何れもセ
ラミツク粉末45重量部,残部ガラス粉末の混合粉
末とした。粉末の混合,使用ビヒクル,ペースト
化,塗布,乾燥,焼結,絶縁層の形成,諸特性の
測定等は実施例―1と同じような方法,条件で行
なつた。その結果、誘電率はAl2O3・SiO2を用い
たものでは7.8前後,3Al2O3・SiO2を用いたもの
では8.5前後,MgO・SiO2を用いたものでは6.7前
後,ZnO・Al2O3を用いたものでは7.5前後であつ
た。誘電損失はそれぞれ0.0051,0.0034,
0.0048,0.0073、絶縁抵抗は同様に2×1011Ω
cm,2.6×1012Ωcm,1.4×1010Ωcm,3.7×1011Ω
cm、リーク電流は同様に230μA,370μA,190
μA,250μAであつた。絶縁層の表面状態,導
体との密着強度等は良好であつた。
Example 6 Glass powder contains 55% by weight of SiO 2 , 6.8% by weight of B 2 O 3 , 6.5% by weight of PbO2, 2.7% by weight of NaO, 17% by weight of K 2 O2, 0.41% by weight of MgO, 5.38% by weight of CaO weight%,
A glass with a composition ratio of 0.1% by weight of BaO, 0.21% by weight of TiO 2 , and 0.93% by weight of ZrO 2 was prepared, ground for 32 hours using alcohol as a dispersion medium using an alumina ball mill, sized with a sieve, and then dried to determine the specific surface area. 4.7m 2 /g
was prepared. As ceramic powder
Al 2 O 3・SiO 2 , 3Al 2 O 3・SiO 2 , MgO, SiO 2 ,
There are four types of ZnO and Al 2 O 3 , and each has a specific surface area.
The particles were adjusted to a particle size of 3.1 to 3.6 m 2 /g. The blending ratio of glass powder and ceramic powder was 45 parts by weight of ceramic powder and the remainder glass powder. Powder mixing, vehicle used, pasting, coating, drying, sintering, formation of an insulating layer, measurement of various properties, etc. were carried out in the same manner and under the same conditions as in Example-1. As a result, the dielectric constant was around 7.8 for the one using Al 2 O 3 · SiO 2 , around 8.5 for the one using 3Al 2 O 3 · SiO 2 , around 6.7 for the one using MgO · SiO 2 , and around 6.7 for the one using ZnO. In the case of using Al 2 O 3 , it was around 7.5. Dielectric loss is 0.0051, 0.0034, respectively.
0.0048, 0.0073, insulation resistance is also 2×10 11 Ω
cm, 2.6×10 12 Ωcm, 1.4×10 10 Ωcm, 3.7×10 11 Ω
cm, leakage current is 230μA, 370μA, 190
μA, 250 μA. The surface condition of the insulating layer and the adhesion strength with the conductor were good.

実施例 7 SiO264.9重量%,B2O36.8重量%,PbO16.6重
量%,Na2O2.7重量%,K2O2.17重量%,
MgO0.41重量%,CaO5.38重量%,BaO0.1重量
%,TiO20.21重量%,ZrO20.93重量%組成比で粉
末比表面積1.96m2/grのガラス粉末と、SiO20.3
重量%,Na2O0.04重量%%,MgO0.34重量%,
CaO0.02重量%,Fe2O30.03重量%の不純物を含
む純度99.29%のAl2O3からなる比表面積が(1)1.72
m2/g,(2)2.58m2/g,(3)6.6m2/gの各粒度を
持つセラミツクス粉末を用いた。ガラス粉末とセ
ラミツクス粉末の配合比率は、何れもセラミツク
ス粉末46重量部で残部はガラス粉末のガラス・セ
ラミツクス混合粉末とした。これら粉末の混合,
ビヒクル,ペースト化,塗布,乾燥,焼結絶縁層
の形成,諸特性の測定等は実施例―1と同じ方
法,条件で行なつた。その結果それぞれの組み合
せについて、誘電率は7.6〜8.5,誘電損失0.0011
〜0.0043,絶縁抵抗1.6×1011〜2.4×1011Ωcm,リ
ーク電流160〜580μAであつた。絶縁層の表面粗
度は最大5.5〜9.3μmで、セラミツクス粉末の比
表面積が大きい程表面粗度は小さくなつている。
導体との密着強度は大差なく十分であつた。
Example 7 SiO2 64.9% by weight, B2O3 6.8% by weight, PbO16.6% by weight, Na2O2.7 % by weight, K2O2.17 % by weight,
Glass powder with a composition ratio of 0.41% by weight of MgO, 5.38% by weight of CaO, 0.1% by weight of BaO, 0.21% by weight of TiO 2 , 0.93% by weight of ZrO 2 and a powder specific surface area of 1.96 m 2 /gr, and 0.3% of SiO 2
wt%, Na 2 O0.04 wt%%, MgO0.34 wt%,
It is made of Al 2 O 3 with a purity of 99.29% including impurities of 0.02% by weight of CaO and 0.03% by weight of Fe 2 O 3.The specific surface area is (1) 1.72.
Ceramic powders having particle sizes of m 2 /g, (2 ) 2.58 m 2 /g, and (3) 6.6 m 2 /g were used. The blending ratio of the glass powder and the ceramic powder was 46 parts by weight of the ceramic powder and the remainder was a glass/ceramics mixed powder of the glass powder. Mixing these powders,
The vehicle, pasting, coating, drying, formation of a sintered insulating layer, measurement of various properties, etc. were carried out in the same manner and under the same conditions as in Example-1. As a result, for each combination, the dielectric constant was 7.6 to 8.5, and the dielectric loss was 0.0011.
0.0043, insulation resistance 1.6×10 11 to 2.4×10 11 Ωcm, and leakage current 160 to 580 μA. The maximum surface roughness of the insulating layer is 5.5 to 9.3 μm, and the larger the specific surface area of the ceramic powder, the smaller the surface roughness.
The adhesion strength with the conductor was sufficient without much difference.

実施例 8 ガラス粉末の組成および組成比は実施例―7と
同じで粉末の比表面積3.47m2/grのガラス粉末,
セラミツクス粉末はAl2O3で粉末比表面積,不純
物の量,純度は実施例―7と同じとした。ガラス
粉末とセラミツクス粉末の配合比率は、ガラス粉
末85%,セラミツク粉末15%として混合しペース
ト化して、アルミナ基板に塗布,乾燥,焼結して
絶縁層を形成し、諸特性の測定等を実施例―1と
同じ方法,条件で行なつた。その結果は誘電率は
4.6,誘電損失0.0012,絶縁抵抗5.8×1011Ωcm,
リーク電流210〜490μA,熱伝導率0.009cal/
cm・℃・secであつた。絶縁層の表面粗度,導体
との密着性も良好であつた。
Example 8 The composition and composition ratio of the glass powder were the same as in Example 7, and the specific surface area of the powder was 3.47 m 2 /gr.
The ceramic powder was Al 2 O 3 and the powder specific surface area, amount of impurities, and purity were the same as in Example-7. The blending ratio of glass powder and ceramic powder was 85% glass powder and 15% ceramic powder, which was mixed into a paste, applied to an alumina substrate, dried, and sintered to form an insulating layer, and various properties were measured. It was conducted using the same method and conditions as Example 1. The result is that the dielectric constant is
4.6, dielectric loss 0.0012, insulation resistance 5.8×10 11 Ωcm,
Leakage current 210-490μA, thermal conductivity 0.009cal/
It was cm・℃・sec. The surface roughness of the insulating layer and its adhesion to the conductor were also good.

実施例 9 SiO259.3重量%,B2O36.2重量%,PbO15.3重
量%,Al2O38.4重量%,Na2O2.2重量%,K2O2.0
重量%,MgO0.34重量%,CaO4.7重量%,
BaO0.17重量%,Fe2O30.29重量%,TiO20.17重
量%,ZrO20.84重量%,ZnO0.09重量%組成比の
ガラスを比表面積が2.54m2/gになるように調製
したガラス粉末15重量部とセラミツク粉末として
SiO2,Na2O,MgO,CaO,FeO3の不純物を微量
に含む純度99.7%のAl2O3で粉末比表面積2.6m2
grのセラミツクス粉末85重量部とからなるガラ
ス・セラミツクス混合粉末を、実施例―1と同じ
方法,条件で作製して絶縁ペースト化し、導体回
路形成されたアルミナ基板上に塗布し乾燥,焼結
し絶縁層を形成し諸特性を測定した。その結果、
誘電率は9.2,誘電損失は0.0009絶縁抵抗は6.2×
1012Ωcm,リーク電流は210μAであつた。絶縁
層の表面粗度導体,および基板との密着性,およ
びピンホールの少ない絶縁層が得られた。
Example 9 SiO 2 59.3% by weight, B 2 O 3 6.2% by weight, PbO 15.3% by weight, Al 2 O 3 8.4% by weight, Na 2 O2.2% by weight, K 2 O2.0
Weight%, MgO0.34weight%, CaO4.7weight%,
Glass having a composition ratio of 0.17% by weight BaO, 0.29% by weight Fe 2 O 3 , 0.17% by weight TiO 2 , 0.84% by weight ZrO 2 , and 0.09% by weight ZnO was prepared so that the specific surface area was 2.54 m 2 /g. As glass powder 15 parts by weight and ceramic powder
A powder specific surface area of 2.6 m 2 /
A glass-ceramics mixed powder consisting of 85 parts by weight of gr ceramic powder was prepared using the same method and conditions as in Example 1, made into an insulating paste, applied onto an alumina substrate on which a conductive circuit was formed, dried, and sintered. An insulating layer was formed and various properties were measured. the result,
Dielectric constant is 9.2, dielectric loss is 0.0009, insulation resistance is 6.2×
10 12 Ωcm, and the leakage current was 210 μA. Surface roughness of insulating layer An insulating layer with good adhesion to the conductor and substrate and with few pinholes was obtained.

実施例 10 SiO2,10.5重量%B2O324.0重量%,ZnO58重量
%,Al2O32.0重量%,BaO2.0重量%,BaO2.0重
量%,PbO2.4重量%,ZrO20.6重量%,TiO20.2
重量%,Na2O0.1重量%,K2O0.2重量%の組成を
有する3.1m2/gの比表面積を有するガラス粉末
9重量部と、実施例―1に用いたと同じガラス粉
末41重量部と、セラミツク粉末とし溶融アルミナ
のを50重量部と、をボールミル混合し、その後実
施例―1と同じ方法でペースト化し絶縁ペースト
とした。これを導体回路が形成されたアルミナ基
板に塗布,乾燥,焼結し絶縁層を形成した。実施
例―1と同じ方法で諸特性の測定を行つた。その
結果、誘電率は7.5,誘電損失は0.0020,絶縁抵
抗1.1×1012Ωcm,リーク電流305μA,熱伝導率
0.025cal/cm・℃・secであつた。絶縁層の表面
粗度は平均3μm,導体およびセラミツク基板と
の密着性も良好であつた。
Example 10 SiO 2 , 10.5% by weight B 2 O 3 24.0% by weight, ZnO 58% by weight, Al 2 O 3 2.0% by weight, BaO 2.0% by weight, BaO 2.0% by weight, PbO 2.4% by weight, ZrO 2 0.6 Weight%, TiO 2 0.2
9 parts by weight of glass powder having a specific surface area of 3.1 m 2 /g and having a composition of 0.1% by weight Na 2 O, 0.2% by weight K 2 O, and 41 parts by weight of the same glass powder used in Example-1. parts by weight and 50 parts by weight of fused alumina as ceramic powder were mixed in a ball mill, and then made into a paste in the same manner as in Example-1 to obtain an insulating paste. This was applied to an alumina substrate on which a conductor circuit had been formed, dried, and sintered to form an insulating layer. Various properties were measured in the same manner as in Example-1. As a result, the dielectric constant was 7.5, the dielectric loss was 0.0020, the insulation resistance was 1.1×10 12 Ωcm, the leakage current was 305 μA, and the thermal conductivity was
It was 0.025 cal/cm・℃・sec. The surface roughness of the insulating layer was 3 μm on average, and the adhesion to the conductor and ceramic substrate was also good.

比較例 A 従来、厚膜積層用絶縁ペーストは無機物に結晶
化ガラスが用いられていた。例えばSiO253重量
%,Al2O33重量%,Li2O11.7重量%,MgO12重
量%,ZrO28.4重量%,P2O511.9重量%の組成比
のガラス粉末のみを用い、実施例―1の方法,条
件でペースト化し、塗布,焼結して絶縁層を形成
し、諸特性を測定した。その結果、絶縁抵抗3×
109Ωcm,熱伝導率0.0048cal/cm・℃・sec,リー
ク電流1680μA等で、本発明を実施して得た上述
されているものに比べて明らかに劣つていた。
Comparative Example A Conventionally, in insulating pastes for thick film lamination, crystallized glass has been used as an inorganic material. For example, using only glass powder with a composition ratio of 53% by weight of SiO 2 , 3% by weight of Al 2 O 3 , 11.7% by weight of Li 2 O, 12% by weight of MgO, 8.4% by weight of ZrO 2 , and 11.9% by weight of P 2 O 5 , It was made into a paste using the method and conditions of Example 1, coated and sintered to form an insulating layer, and various properties were measured. As a result, insulation resistance 3×
It had a value of 10 9 Ωcm, a thermal conductivity of 0.0048 cal/cm·°C·sec, a leakage current of 1680 μA, etc., and was clearly inferior to the above-mentioned product obtained by implementing the present invention.

比較例 B SiO230重量%,Al2O310重量%,BaO26重量
%,ZnO10重量%,CaO6重量%,B2O38重量
%,TiO28重量%,MaO2重量%組成比の一部結
晶化するガラス粉末のみを用い、実施例―1の方
法,条件で絶縁層を形成し、諸特性を測定した。
その結果,絶縁抵抗1.6×1010Ωcm,熱伝導率
0.0046cal/cm・℃・sec,リーク電流1300μAで
あつた。
Comparative example B One of the composition ratios of 30% by weight of SiO 2 , 10% by weight of Al 2 O 3 , 6% by weight of BaO, 10% by weight of ZnO, 6% by weight of CaO, 8% by weight of B 2 O 3 , 8% by weight of TiO 2 , and 2% by weight of MaO Using only partially crystallized glass powder, an insulating layer was formed using the method and conditions of Example 1, and various properties were measured.
As a result, the insulation resistance was 1.6×10 10 Ωcm, and the thermal conductivity was
The leakage current was 0.0046cal/cm・℃・sec and 1300μA.

以上説明したように本発明の絶縁層焼成ペース
ト用粉末状無機組成物を用いた結果は、従来の結
晶化ガラス系の絶縁ペーストに比べ、絶縁層の緻
密性熱伝導率が優れ、また導体との密着強度の大
きい絶縁ペーストの提供が可能となり、厚膜多層
電子回路の実装の高密度化,信頼性の向上に寄与
することができる。
As explained above, the results of using the powdered inorganic composition for insulating layer firing paste of the present invention are that the dense thermal conductivity of the insulating layer is superior to that of conventional crystallized glass-based insulating pastes, and This makes it possible to provide an insulating paste with high adhesion strength, contributing to higher density packaging and improved reliability of thick-film multilayer electronic circuits.

本発明で用いるセラミツクス粉末としては実施
例記載のもの以外にも、例えば塩基性耐火物材料
であるCaO・Al2O3・2SiO2,或いはCaO・
SiO2,複珪酸塩,等も有効であり、またこれら
の複合組合せにおいても有効であることは勿論で
ある。
In addition to those described in the examples, ceramic powders used in the present invention include, for example, basic refractory materials such as CaO.Al 2 O 3.2SiO 2 or CaO.
It goes without saying that SiO 2 , double silicates, etc. are also effective, and a composite combination thereof is also effective.

Claims (1)

【特許請求の範囲】 1 1〜8m2/gの比表面積を有する粉末状のガ
ラスを30〜70重量部及び合算して100重量部とな
す残部を0.8〜9.5m2/gの比表面積を有する粉末
状のセラミツクスとして混合したものであり、ビ
ヒクル中に分散させてペースト状となし塗布,焼
成を経て絶縁層を形成するための粉末状無機組成
物であつて、前記粉末状のガラスの組成がその原
料組成を酸化物に換算表記したときSiO210〜80
重量%, PbO2〜55重量%,B2O33〜35重量%, CaO0.2〜12重量%,MgO0.2〜12重量%, BaO0.1〜10重量%,Al2O30〜20重量%, Li2O0.1〜5重量%,Na2O0.1〜5重量%, K2O0.1〜5重量%,TiO20.1〜5重量%, ZrO20.1〜5重量%,ZnO0.1〜5重量%の範囲
の無機酸化物をその原料組成とし且つ前記無機酸
化物中の少なくともSiO2,B2O3,PbO,Na2Oの
4種は必須構成組成として含むものであり、前記
粉末状のセラミツクスの組成がその原料組成を酸
化物に換算表記したときAl2O3,MgO・Al2O3
Al2O3・SiO2,3Al2O3・SiO2,MgO・SiO2
ZnO・Al2O3と表わせる各組成の組から選ばれた
少くとも1組以上の無機酸化物の組を原料組成と
して含むものであること、を特徴とする絶縁層焼
成ペースト用粉末状無機組成物。
[Claims] 1. 30 to 70 parts by weight of powdered glass having a specific surface area of 1 to 8 m 2 /g, and the remainder having a specific surface area of 0.8 to 9.5 m 2 /g. It is a powdered inorganic composition for forming an insulating layer by dispersing it in a vehicle, applying it to a paste form, and firing it, which has the composition of the powdered glass. When the raw material composition is expressed in terms of oxide, SiO 2 10~80
Weight%, PbO 2 - 55% by weight, B 2 O 3 3 - 35% by weight, CaO 0.2 - 12% by weight, MgO 0.2 - 12% by weight, BaO 0.1 - 10% by weight, Al 2 O 3 0 - 20% by weight, Li 2 O 0.1-5% by weight, Na 2 O 0.1-5% by weight, K 2 O 0.1-5% by weight, TiO 2 0.1-5% by weight, ZrO 2 0.1-5% by weight, The raw material composition is an inorganic oxide in the range of 0.1 to 5% by weight of ZnO, and at least four of the inorganic oxides, SiO 2 , B 2 O 3 , PbO, and Na 2 O, are included as essential constituents. The composition of the powdered ceramics is Al 2 O 3 , MgO・Al 2 O 3 , when the raw material composition is expressed in terms of oxides.
Al 2 O 3・SiO 2 , 3Al 2 O 3・SiO 2 , MgO・SiO 2 ,
A powdery inorganic composition for an insulating layer firing paste, characterized in that it contains as a raw material composition at least one inorganic oxide group selected from each composition group represented by ZnO・Al 2 O 3 .
JP5994379A 1979-05-16 1979-05-16 Powder inorganic composition for insulating layer calcining paste Granted JPS55151707A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5994379A JPS55151707A (en) 1979-05-16 1979-05-16 Powder inorganic composition for insulating layer calcining paste

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5994379A JPS55151707A (en) 1979-05-16 1979-05-16 Powder inorganic composition for insulating layer calcining paste

Publications (2)

Publication Number Publication Date
JPS55151707A JPS55151707A (en) 1980-11-26
JPS6233682B2 true JPS6233682B2 (en) 1987-07-22

Family

ID=13127724

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS55151707A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3941201B2 (en) 1998-01-20 2007-07-04 株式会社デンソー Conductive paste composition and circuit board
JP4545733B2 (en) * 2006-11-20 2010-09-15 株式会社デンソー Conductive paste composition and circuit board

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JPS55151707A (en) 1980-11-26

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