JPS6236343B2 - - Google Patents
Info
- Publication number
- JPS6236343B2 JPS6236343B2 JP12019185A JP12019185A JPS6236343B2 JP S6236343 B2 JPS6236343 B2 JP S6236343B2 JP 12019185 A JP12019185 A JP 12019185A JP 12019185 A JP12019185 A JP 12019185A JP S6236343 B2 JPS6236343 B2 JP S6236343B2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- face plate
- transparent
- image pickup
- mesh electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
- H01J31/34—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen having regulation of screen potential at cathode potential, e.g. orthicon
- H01J31/38—Tubes with photoconductive screen, e.g. vidicon
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】
本発明は、撮像管、例えば位相分離方式の単一
カラー撮像管方式による撮像管に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image pickup tube, for example, a phase-separated single-color image pickup tube.
本発明による撮像管を図面を参照して説明す
る。図示の例は位相分離方式による単一管型の撮
像管で、これは例えば第1図に示すように、管体
1の前方端に、第2図に示すように、円板状透明
基板2、すなわちガラスフエースプレートの内面
に光学色フイルタ3とターゲツト4とが配置され
て成る面板20が封着されて成る。そして、管体
1内には、電子銃6が配置され、これより発射さ
れる電子ビームがターゲツト4上を走査するよう
になされる。7は管体1内にターゲツト4と対向
して配置されたフイールドメツシユ電極で、8は
例えば管体1の内周面に被着された水平・垂直静
電偏向用の導電層、9は集束コイル、10は整列
コイルである。また、管体1に対する面板20の
封着は、リング電極11の内周面に被着されたイ
ンジウムリング12を、管体1の前方端面、或い
は図示しないが管体1の前方端面に封着されたリ
ングの前方端面と、面板20との間に挾み込んだ
圧潰することによつて封着される。ターゲツト4
は、主として透明導電膜、すなわち透明電極13
と、これの上に被着された光導電膜14とを有し
て成る。透明導電膜13は、第3図に示すよう
に、透明薄板、すなわちガラス薄板15上の中央
に例えば平行電極群がビームの走査領域において
このビームの走査方向とほぼ直交する方向に延長
して配列され全体として方形状例えば長方形状を
なす電子ビーム走査領域131と、その1つ置き
の平行電極が撮像面の無効部分において互いに連
結され第2図に鎖線図示のように、面板20を貫
通するように設けられた端子ピン17a及び17
bによつて端子導出が行われる端子導出領域13
2と、全体として長方形等の方形状をなす電子ビ
ーム走査領域131を囲むように薄板15の周縁
に沿つて円弧状に延在し方形状の電子ビーム走査
領域131との間に半月状の欠除部133を介し
て設けられた外周領域134とを有する電極部1
3a及び13bより成る。 An image pickup tube according to the present invention will be explained with reference to the drawings. The illustrated example is a single-tube type image pickup tube using a phase separation method, for example, as shown in FIG. That is, a face plate 20 having an optical color filter 3 and a target 4 disposed thereon is sealed to the inner surface of a glass face plate. An electron gun 6 is disposed within the tube 1, and the electron beam emitted from the gun scans the target 4. 7 is a field mesh electrode disposed inside the tube 1 facing the target 4; 8 is a conductive layer for horizontal and vertical electrostatic deflection deposited on the inner peripheral surface of the tube 1; 9 is a conductive layer for horizontal and vertical electrostatic deflection; A focusing coil, 10, is an alignment coil. Further, the face plate 20 is sealed to the tube body 1 by sealing the indium ring 12 attached to the inner peripheral surface of the ring electrode 11 to the front end surface of the tube body 1 or to the front end surface of the tube body 1 (not shown). The ring is sandwiched between the front end surface of the ring and the face plate 20, and then crushed and sealed. Target 4
is mainly a transparent conductive film, that is, a transparent electrode 13
and a photoconductive film 14 deposited thereon. As shown in FIG. 3, the transparent conductive film 13 has, for example, a group of parallel electrodes arranged in the center of a transparent thin plate, that is, a thin glass plate 15, extending in a direction substantially perpendicular to the scanning direction of the beam in the scanning area of the beam. The electron beam scanning area 131, which has an overall square shape, for example, a rectangular shape, and its parallel electrodes are connected to each other in the ineffective portion of the imaging surface so as to pass through the face plate 20, as shown by chain lines in FIG. Terminal pins 17a and 17 provided in
Terminal derivation area 13 where terminal derivation is performed by b
2 and a rectangular electron beam scanning area 131 that extends in an arc shape along the periphery of the thin plate 15 so as to surround the electron beam scanning area 131 that has a rectangular shape as a whole. Electrode portion 1 having an outer peripheral region 134 provided through a removed portion 133
3a and 13b.
一方、光学色フイルタ3は、フエースプレート
2の内面に、図示しないが例えば赤、緑、及び青
の各平行フイルタ群が順次透明電極13の平行電
極群と所定の位置関係をもつて配列された有機物
フイルタより成る。 On the other hand, the optical color filter 3 includes, for example, red, green, and blue parallel filter groups (not shown) arranged on the inner surface of the face plate 2 in a predetermined positional relationship with the parallel electrode groups of the transparent electrode 13. Consists of an organic filter.
そして、透明電極すなわち透明導電膜13が形
成された透明薄板15は、接着剤16によつて光
学色フイルタ3が形成されたフエースプレート2
の内面に接着される。 The transparent thin plate 15 on which the transparent electrode, that is, the transparent conductive film 13 is formed, is attached to the face plate 2 on which the optical color filter 3 is formed with an adhesive 16.
is glued to the inner surface of the
透明導電膜13上には、例えば3硫化アンチモ
ンより成る光導電面、すなわち光電変換面14が
被着される。 A photoconductive surface, ie, a photoelectric conversion surface 14, made of antimony trisulfide, for example, is deposited on the transparent conductive film 13.
リング電極11は、フイールドメツシユ電極7
の端子となされ、この場合は、メツシユ電極7の
支持フランジ部7aがインジウムリング12内に
埋込まれて支持され、リング電極11と電気的に
連結される。 The ring electrode 11 is the field mesh electrode 7
In this case, the supporting flange portion 7a of the mesh electrode 7 is embedded and supported within the indium ring 12, and is electrically connected to the ring electrode 11.
面板20の作成において、その光学色フイルタ
は、そのパターニングを比較的高精度に容易にで
きる有機物材によつて構成するものであるが、こ
の場合、その耐熱は低いので、これの上に直接的
に透明電極を被着することができない。すなわ
ち、この透明電極13は、例えば400℃程度の加
熱の下に、スパツタリング、蒸着等によつて被着
されるが、この熱によつて色フイルタの分光特性
に変化を来す。そこで、前述したように、光学色
フイルタ3と、透明電極13とは、予め夫々別体
のフエースプレート2とガラス薄板15とに形成
し、その後、両者を接着剤16によつて接着合体
するという製造方法がとられる。ところがこのよ
うな方法による場合、最終的にガラス薄板15
は、面板20の光学的特性上、20μm程度にも薄
い厚さにする必要があり、このような薄いガラス
板を破損なく取扱つて、これに透明電極13を形
成することは至難なものであるので、通常、透明
電極13の形成に当たつては、先ず比較的厚い透
明板、すなわちガラス板上に透明電極13を形成
して後に、このガラス板の電極13を有する側の
面に接着剤によつて補強用の平滑板を仮接合し、
その後ガラス板を裏面から粗研磨、及び鏡面研磨
して所要の薄い厚さとなして、この研磨された側
の面を光学色フイルタが形成されたフエースプレ
ート2に接着し、上述の仮接合された補強用平滑
板を除去するという方法がとらる。 In creating the face plate 20, the optical color filter is made of an organic material that can be easily patterned with relatively high precision. It is not possible to apply transparent electrodes to the surface. That is, the transparent electrode 13 is deposited by sputtering, vapor deposition, or the like while being heated to, for example, about 400° C., and this heat causes a change in the spectral characteristics of the color filter. Therefore, as described above, the optical color filter 3 and the transparent electrode 13 are formed in advance on the face plate 2 and the thin glass plate 15, which are separate bodies, respectively, and then the two are bonded together using the adhesive 16. A manufacturing method is used. However, when using such a method, the thin glass plate 15
Due to the optical characteristics of the face plate 20, it is necessary to make it as thin as about 20 μm, and it is extremely difficult to handle such a thin glass plate without damaging it and form the transparent electrode 13 on it. Therefore, when forming the transparent electrode 13, the transparent electrode 13 is first formed on a relatively thick transparent plate, that is, a glass plate, and then an adhesive is applied to the side of the glass plate that has the electrode 13. Temporarily join the reinforcing smooth plate by
After that, the glass plate was rough-polished and mirror-polished from the back side to a required thin thickness, and this polished side was adhered to the face plate 2 on which the optical color filter was formed, and the above-mentioned temporary bonding was performed. The method used is to remove the reinforcing smooth plate.
ところが、このような方法による場合、上述し
たように補強用平滑板を仮接合したのちのガラス
板に対するその厚みを薄くするための研磨に際し
てガラス薄板の周辺部に微細亀裂(クラツク)が
生ずるが、これによつて例えば平滑板の剥離作業
に際して透明電極13の微細パターンを傷つけ、
電極13に欠損や断線などを招く。また、前述し
たガラス板の研磨によつて生ずる周辺部のクラツ
クにより或いはこのクラツクによつて生じるガラ
ス破片による擦傷により、更に或いはクラツクの
成長によつてガラス薄板15の気密性が害なわれ
て撮像管の真空度を低下させるに至る。 However, when such a method is used, micro-cracks occur in the periphery of the thin glass plate when the glass plate is polished to reduce its thickness after the reinforcing smooth plate has been temporarily bonded as described above. This may damage the fine pattern of the transparent electrode 13 during, for example, peeling off the smooth plate.
This causes damage to the electrode 13, breakage, etc. In addition, the airtightness of the thin glass plate 15 may be impaired due to the cracks in the periphery caused by the above-mentioned polishing of the glass plate, or due to scratches caused by glass fragments caused by the cracks, or due to the growth of cracks, resulting in poor imaging. This leads to a decrease in the vacuum level of the tube.
このような諸欠点を回避し、更にそのほか種々
の利益をもたらすことのできるカラー撮像管用面
板の製法を第4図以下を参照して説明する。 A method of manufacturing a face plate for a color image pickup tube that can avoid these drawbacks and provide various other benefits will be described with reference to FIG. 4 and subsequent figures.
先ず、第4図に示すように、例えば直径が22.8
mmで、厚さが2.5mmの透明板としてのガラス板2
1を用意する。このガラス板21の一主面21a
は、平滑性にすぐれた面となし、この面21a上
に、例えば第3図で説明したようなパターンを有
する透明電極を形成する。これがためには、先ず
ガラス板21の面21a上に透明導電膜22、例
えばSnO2、In2O3、In2O3−SnO2等の膜を、蒸
着、スパツタリング等の周知の技術によつて被着
する。この被着に当たつては、前述したように比
較的耐熱性の低い光学色フイルタが存在していな
いので、この蒸着或いはスパツタリグは、この被
着を強固に行なうに必要な高い温度下で行うこと
ができる。 First, as shown in Figure 4, for example, if the diameter is 22.8
Glass plate 2 as a transparent plate with a thickness of 2.5 mm
Prepare 1. One main surface 21a of this glass plate 21
The surface 21a has excellent smoothness, and a transparent electrode having a pattern as explained in FIG. 3, for example, is formed on this surface 21a. To achieve this, first, a transparent conductive film 22, such as a film of SnO 2 , In 2 O 3 , In 2 O 3 -SnO 2 or the like, is coated on the surface 21a of the glass plate 21 by a well-known technique such as vapor deposition or sputtering. It adheres to the skin. For this deposition, as mentioned above, since there is no optical color filter with relatively low heat resistance, this vapor deposition or sputtering is performed at the high temperature necessary to make this deposition strong. be able to.
そして、この透明導電膜22上に、フオトレジ
スト膜、例えばポジタイプのAZ1350(シツプレ
ー社製商品名)、或いはOFPR(東京応化製商品
名)を塗布し、写真技術、すなわち、露光、現像
処理を行つて透明電極パターンに応じたパターン
のフオトレジスト膜23を被着形成する。このフ
オトレジスト膜23をエツチングマスクとして透
明導電膜22をエツチングして、第5図に示すよ
うに、フオトレジスト膜23のパターンに応じた
パターンの透明電極、すなわち例えば第3図で説
明したパターンの透明電極13を形成する。そし
て、この透明電極13上に、フオトレジスト膜2
3が被着されたままの状態で、これの上より、平
滑板24を接着する。この平滑板24は、その直
径が、基板21の直径と同程度ないしはこれより
大の例えば23mmで厚さが1.0mmのガラス板によつ
て構成する。そして、この平滑板24は、その相
対向する主面24a及び24bが、互に平滑で且
つ平行度にすぐれたガラス板より構成される。こ
の平滑板24の、透明板21への接合は、比較的
融点が高く、アセトン等の溶剤に可溶性の接着剤
25例えば熱可塑性ポリマーのクリスタルボンド
(アレコム社製商品名)によつて行い得る。この
接着剤25と、フオトレジスト膜23は同一の溶
剤に対し可溶性を呈する材料より選ばれることが
望まれる。これがため、前述したように接着剤2
5としてアセトンに可溶性のクリスタルボンドを
用い、フオトレジスト膜23として同様にアセト
ンに可溶性のAZ1350を用い得る。そして、この
透明板21と平滑板24との接合は、例えば真空
加熱処理によつて行う。すなわち、例えば150℃
〜160℃程度の加熱を0.1トル程度の真空引き下で
行い、平滑板24と透明板21とを両者間に介存
する気泡を脱泡させて密着させる。その後、真空
ブレークして大気圧となし、冷却させる。このよ
うにすれば透明板21上の透明電極13を挾ん
で、平滑板24が接合される。この場合、乾燥後
の接着剤の厚さが2〜3μm程度となるように選
定し得る。 Then, a photoresist film such as positive type AZ1350 (trade name manufactured by Shippray Co., Ltd.) or OFPR (trade name manufactured by Tokyo Ohka Co., Ltd.) is coated on this transparent conductive film 22, and photographic technology, that is, exposure and development processing is performed. A photoresist film 23 having a pattern corresponding to the transparent electrode pattern is then deposited. The transparent conductive film 22 is etched using the photoresist film 23 as an etching mask, and as shown in FIG. A transparent electrode 13 is formed. Then, a photoresist film 2 is placed on this transparent electrode 13.
3 remains attached, and a smooth plate 24 is adhered thereon. The smooth plate 24 is made of a glass plate having a diameter of 23 mm, for example, and a thickness of 1.0 mm, which is the same as or larger than the diameter of the substrate 21. The smooth plate 24 is composed of glass plates whose opposing main surfaces 24a and 24b are mutually smooth and have excellent parallelism. The smooth plate 24 can be bonded to the transparent plate 21 using an adhesive 25 having a relatively high melting point and soluble in a solvent such as acetone, for example, a thermoplastic polymer Crystal Bond (trade name, manufactured by Alecom). It is desirable that the adhesive 25 and the photoresist film 23 be selected from materials that are soluble in the same solvent. Therefore, as mentioned above, the adhesive 2
Crystal bond which is soluble in acetone can be used as the photoresist film 23, and AZ1350 which is also soluble in acetone can be used as the photoresist film 23. The transparent plate 21 and the smooth plate 24 are bonded together by, for example, vacuum heat treatment. i.e. for example 150℃
Heating is performed at a temperature of about 160 DEG C. under a vacuum of about 0.1 torr to bring the smooth plate 24 and the transparent plate 21 into close contact with each other by removing air bubbles between them. After that, the vacuum is broken to atmospheric pressure and cooled. In this way, the smooth plate 24 is joined with the transparent electrode 13 on the transparent plate 21 sandwiched therebetween. In this case, the thickness of the adhesive after drying can be selected to be about 2 to 3 μm.
次に、透明板21を、平滑板24が接合された
側とは反対側の面21bより粗研磨、及び鏡面研
磨してその厚さを例えば20μmとし第2図で説明
した透明薄板15を構成する。これがため、先
ず、第6図に示すように、透明板21と、平滑板
24との接合体を、平滑板24の外面24a側に
おいて、ラツピング研磨用の平滑定盤27に接着
する。この接着は、密ろうなどの平滑板24と、
透明板21との接合に用いられる接着剤25に比
し、その融点が低いろう材を用いる。 Next, the transparent plate 21 is rough-polished and mirror-polished from the surface 21b opposite to the side to which the smooth plate 24 is joined to a thickness of, for example, 20 μm, forming the transparent thin plate 15 explained in FIG. do. Therefore, as shown in FIG. 6, first, the joined body of the transparent plate 21 and the smooth plate 24 is adhered to the smooth surface plate 27 for lapping and polishing on the outer surface 24a side of the smooth plate 24. This adhesion is performed with a smooth plate 24 such as beeswax,
A brazing material whose melting point is lower than that of the adhesive 25 used for bonding to the transparent plate 21 is used.
そして、第7図に示すように、アルミナ研磨剤
等の例えば#1500の砥粒を用いて透明板21を2
1b側よりラツプ加工して最終的に得る透明薄板
15よりは厚いが、透明板21の最初の厚さより
は十分薄い所要の厚さに粗研磨する。その後、流
水洗浄及び超音波洗浄を行つて砥粒を排除する。
次に、加熱によつて密ろうを熔かして、平滑板2
4と透明板21との接合体を平滑定盤27より剥
離する。この場合、平滑板24と透明板21との
接合をなす接着剤25は、定盤27に対する接着
剤よりその融点が高い接着剤が用いられているの
で、定盤27への接合、剥離に際して接着剤25
が熔融ないしは軟化して、平滑板24と、透明板
21との間に傾きや位置ずれが生じるようなこと
がない。 Then, as shown in FIG. 7, the transparent plate 21 is polished using abrasive grains of #1500 such as alumina abrasive.
The transparent plate 21 is roughly polished to a required thickness that is thicker than the transparent thin plate 15 finally obtained by lapping from the 1b side, but sufficiently thinner than the initial thickness of the transparent plate 21. Thereafter, running water cleaning and ultrasonic cleaning are performed to remove abrasive grains.
Next, the beeswax is melted by heating, and the smooth plate 2 is
4 and the transparent plate 21 is peeled off from the smooth surface plate 27. In this case, the adhesive 25 that joins the smooth plate 24 and the transparent plate 21 is an adhesive whose melting point is higher than that of the adhesive for the surface plate 27, so that when bonding to the surface plate 27 and peeling off, the adhesive 25 is used. agent 25
There is no possibility that the smooth plate 24 and the transparent plate 21 will be tilted or misaligned due to melting or softening.
次に、透明板21のラツプ加工面を鏡面研磨し
て所要の厚さ、例えば20μmの厚さの透明薄板1
5を構成するが、この鏡面研磨に先だつて第8図
に示すように平滑板24と透明板21との接合体
の周面特に透明板21の周面を、透明板21のラ
ツプ面側を小径とするような角度θ1を有する円
錐面状ないしは彎曲面例えば球面状に周面斜め研
磨を行う。この周面斜め研磨は、例えば#1200以
上のダイヤモンドホイールによる面とり研削盤に
よつて図の例のように円錐状に研削するとか、凹
面を有する砥石によつて例えば球面状の一部をな
すよう形成する。この周面の斜め研磨は、次に行
う鏡面研磨に際して周辺部に発生するクラツクが
効果的に回避されることを見出したことによる。
この斜め研磨の角度θ1は30゜〜60゜に選定す
る。 Next, the lapped surface of the transparent plate 21 is polished to a mirror finish to give the transparent thin plate 1 a desired thickness, for example, 20 μm.
5, but prior to this mirror polishing, as shown in FIG. The circumferential surface is obliquely polished into a conical or curved surface, such as a spherical surface, having an angle θ 1 to reduce the diameter. This peripheral surface diagonal polishing can be done by grinding into a conical shape as shown in the example with a chamfer grinder using a #1200 or larger diamond wheel, or by grinding a part of a spherical surface by using a grindstone with a concave surface. form like this. This oblique polishing of the peripheral surface is based on the discovery that cracks occurring in the peripheral portion during the next mirror polishing can be effectively avoided.
The angle θ1 of this oblique polishing is selected to be 30° to 60°.
その後、第9図に示すように、研磨用の平滑定
盤28に、前述したと同様に接着剤25に比して
その融点が低い密ろうによつて平滑板24の面2
4aを接着し、透明板21の先のラツプ面を、例
えばCeO2研磨剤によつて鏡面研磨すす。 Thereafter, as shown in FIG. 9, the surface of the smooth plate 24 is placed on a polishing smooth surface plate 28 using beeswax whose melting point is lower than that of the adhesive 25, as described above.
4a is adhered, and the lap surface at the end of the transparent plate 21 is mirror-polished using, for example, CeO 2 abrasive.
次に、同様に加熱によつて密ろうをとかし、定
盤28より、平滑板24を剥離する。このように
すると、第10図に示すように、所要の薄い厚さ
を有する透明薄板15が、透明板21より構成さ
れる。 Next, the beeswax is similarly melted by heating, and the smooth plate 24 is peeled off from the surface plate 28. In this way, as shown in FIG. 10, a transparent thin plate 15 having a required thin thickness is formed of the transparent plate 21.
一方、第11図に示すように、透明基板、すな
わち撮像管のガラスフエースプレート2の平滑内
面2a上に、周知の方法によつて通常のように、
所要のパターンを有する光学色フイルタ3を被着
形成し置く。 On the other hand, as shown in FIG. 11, a transparent substrate, that is, a smooth inner surface 2a of the glass face plate 2 of the image pickup tube, is coated by a well-known method in the usual manner.
An optical color filter 3 having a desired pattern is deposited and placed.
第12図に示すように、フエースプレート2の
フイルタ3が形成されている側の面に、透明薄板
15と平滑板24との接合体を、薄板15のラツ
プ側の面において接合する。この接合は、例えば
光硬化性のエポキシ系の感光性樹脂のように、接
着剤25とフオトレジスト膜23に対する溶剤に
耐える接着剤26によつて接着する。 As shown in FIG. 12, a joined body of a transparent thin plate 15 and a smooth plate 24 is bonded to the surface of the face plate 2 on the side where the filter 3 is formed, on the lap side surface of the thin plate 15. This bonding is performed by using an adhesive 25 and an adhesive 26 that is resistant to solvents for the photoresist film 23, such as a photocurable epoxy photosensitive resin.
そして、第13図に示すように、この接合体の
周面、特に、透明薄板15の周面を平滑板24の
周面を含んで、平滑板24側を小径とするような
角度θ2を有する斜め周面研磨を前述したと同様
に行つて薄板15の周辺部の亀裂等の欠陥が生じ
ている部分をとり去る。この斜め周面研磨も円錐
面状、或いは球面状等の彎曲面とする。この場合
の角度θ2は30゜〜60゜、なかんづく30゜〜45゜
に選定することが望ましい。尚、この斜め研磨
は、フエースプレート2の外面側の周辺部を治具
にくわえさせて行うことができる。 Then, as shown in FIG. 13, the circumferential surface of this joined body, especially the circumferential surface of the transparent thin plate 15, is set at an angle θ 2 such that the circumferential surface of the smooth plate 24 is included and the smooth plate 24 side has a smaller diameter. Polishing of the diagonal circumferential surface is performed in the same manner as described above to remove portions of the thin plate 15 where defects such as cracks have occurred at the peripheral portion. This diagonal circumferential surface polishing is also performed to form a curved surface such as a conical surface or a spherical surface. In this case, the angle θ 2 is desirably selected to be 30° to 60°, particularly 30° to 45°. Note that this diagonal polishing can be performed by holding the peripheral portion of the outer surface of the face plate 2 in a jig.
次に、第14図に示すように、接着剤25、例
えばクリスタルボンドと、フオトレジスト膜2
3、例えばAZ1350との共通の溶剤、例えばアセ
トンによつてこれら接着剤25とフオトレジスト
膜23とを溶かし、平滑板24をとり去ると共
に、透明電極13上を覆うフオトレジスト膜23
を除去する。 Next, as shown in FIG. 14, an adhesive 25, for example, crystal bond, and a photoresist film 2
3. For example, dissolve the adhesive 25 and the photoresist film 23 using a common solvent with AZ1350, such as acetone, remove the smooth plate 24, and remove the photoresist film 23 covering the transparent electrode 13.
remove.
その後、第15図に示すように、透明電極13
上を含んで、ガラス薄板15上に、光導電膜14
を被着する。このようにして面板20を得るもの
であり、この面板20は透明薄板15の周面に傾
斜面29が存在していることは注意すべき点であ
る。 After that, as shown in FIG.
A photoconductive film 14 is formed on the thin glass plate 15 including the top.
be coated with. The face plate 20 is obtained in this way, and it should be noted that the face plate 20 has an inclined surface 29 on the circumferential surface of the transparent thin plate 15.
そして、このようにして得た面板5を用いて撮
像管を構成する場合は、第16図に示すように面
板20を、第2図で説明したと同様にインジウム
リング12によつて、管体1の前方端面、或いは
管体1の前方端面に封着されたリング(図示せ
ず)に、封着する。 When constructing an image pickup tube using the face plate 5 obtained in this way, as shown in FIG. 1 or a ring (not shown) sealed to the front end surface of the tube body 1.
このように面板20を、インジウムリング12
の圧潰によつて管体1に封着する場合、面板20
のその封着側の周辺に傾斜面29が存在している
ことによつて、面板20の管体1への封着に際し
て両者を互に押圧して、インジウムを圧潰すると
き、透明薄板15の周縁に掛る圧力を傾斜面29
に沿つて分散させることができて、薄板15の周
縁を欠損させるような事故を回避できる。すなわ
ち、第2図に示した面板20を製造する場合、最
終的に、薄板15の周辺辺の研磨等に際して生じ
たクラツクなどの欠陥を除去するために、面板2
0の周面を研磨除去する作業が行われるが、この
場合、周面の仕上り研磨面は、面板20の軸心に
沿う各部同径の円筒面に形成される。すなわち、
薄板15の周面は板面方向と垂直をなすので、薄
板15の内側周縁の肩部は断面直角となつてい
る。したがつて、この場合、インジウムリング1
2の圧潰に際してこの直角肩部に大きな力が与え
られ、ここが欠損する事故が生じ易いものである
が、本発明においては傾斜面29の存在による緩
やかな面とされているので、このような事故を効
果的に回避できるものである。 In this way, the face plate 20 is attached to the indium ring 12.
When sealing to the tube body 1 by crushing the face plate 20
Due to the presence of the inclined surface 29 around the sealing side of the transparent thin plate 15, when the face plate 20 is pressed together to crush the indium when sealing the face plate 20 to the tube body 1. The pressure applied to the periphery is reduced to the inclined surface 29.
This makes it possible to avoid accidents such as damage to the peripheral edge of the thin plate 15. That is, when manufacturing the face plate 20 shown in FIG.
0 is performed, and in this case, the finished polished surface of the peripheral surface is formed into a cylindrical surface having the same diameter at each part along the axis of the face plate 20. That is,
Since the peripheral surface of the thin plate 15 is perpendicular to the plate surface direction, the shoulder portion of the inner peripheral edge of the thin plate 15 is perpendicular to the cross section. Therefore, in this case, indium ring 1
When 2 is crushed, a large force is applied to this right-angled shoulder, which tends to cause damage to the right-angled shoulder, but in the present invention, since the slope is a gentle surface due to the presence of the slope 29, such a right-angled shoulder is Accidents can be effectively avoided.
更にまた特に、周面研磨を斜めの研磨によつて
行うことによつて、この研磨に伴う、クラツクな
どの傷の発生を激減できる。すなわち、今、この
斜め周面研磨における角度θと、傷の発生の関係
を測定したところ、第16図に示すような結果が
得られた。これによれば角度θを60゜以下、特に
45゜以下とするとき、傷の発生が激減しているこ
とが判る。この測定は、長さ0.5mm以内の傷を1
個とし、例えば長さ1mmの傷は2個とし、1.5の
傷は3個というように数えた。なお、この角度θ
が30゜未満となると、薄板15の縁部が尖鋭とな
り、かけの問題が生じてくる。ここに、角度θ、
すなわち、前述の角度θ1及びθ2を30゜〜60
゜、なかんづく30゜〜45゜に選定する所以があ
る。 Furthermore, in particular, by polishing the circumferential surface by diagonal polishing, the occurrence of scratches and other flaws caused by this polishing can be drastically reduced. That is, when the relationship between the angle θ and the occurrence of scratches in this oblique circumferential polishing was measured, the results shown in FIG. 16 were obtained. According to this, the angle θ is 60° or less, especially
It can be seen that when the angle is set to 45° or less, the occurrence of scratches is drastically reduced. This measurement measures scratches within 0.5mm in length.
For example, a scratch with a length of 1 mm was counted as two, a scratch with a length of 1.5 was counted as three, and so on. Note that this angle θ
If the angle is less than 30°, the edges of the thin plate 15 will become sharp, causing a problem of chipping. Here, the angle θ,
That is, the angles θ 1 and θ 2 mentioned above are set to 30° to 60°.
There is a reason why the angle is selected from 30° to 45°.
またこの斜め周面研磨のダイヤモンドホイール
の粒度と同様の傷の数との関係の測定結果を、第
17図に示す。これより明らかなように#600以
上で傷の発生が激減している。 Further, the measurement results of the relationship between the grain size of the diamond wheel used for polishing the oblique peripheral surface and the number of similar scratches are shown in FIG. As is clear from this, the occurrence of scratches is drastically reduced with #600 and above.
尚、第10図で説明したように鏡面研磨に先立
つてその研磨の進む方向に漸次その径を大とする
ような斜め周面研磨をなし置くときも、鏡面研磨
に際してのクラツクの発生が激減されることも確
められた。 Furthermore, as explained in FIG. 10, when performing diagonal circumferential polishing in which the diameter is gradually increased in the direction in which the polishing progresses prior to mirror polishing, the occurrence of cracks during mirror polishing can be drastically reduced. It was also confirmed that
このように、面板20のガラス薄板15に発生
ないしは残存するクラツク等の欠陥を効果的に回
避できることによつて、撮像管における真空度の
劣化を回避でき、信頼性の高い撮像管を得ること
ができる。 In this way, by effectively avoiding defects such as cracks that occur or remain in the thin glass plate 15 of the face plate 20, it is possible to avoid deterioration of the degree of vacuum in the image pickup tube and obtain a highly reliable image pickup tube. can.
また、上述したように、透明電極13上にフオ
トレジスト膜23が被着されている状態でこれの
上に平滑板24を接合する場合は、電極13がフ
オトレジスト膜23によつて保護されるので、例
えば接着剤25に混入されている異物や透明板2
1の研磨時のクラツクやガラス破片によつて例え
ば、平滑板24の剥離に際して電極13が傷つけ
られるおそれを回避できる利益がある。 Furthermore, as described above, when the smooth plate 24 is bonded to the photoresist film 23 on the transparent electrode 13, the electrode 13 is protected by the photoresist film 23. Therefore, for example, foreign matter mixed in the adhesive 25 or the transparent plate 2
This has the advantage of avoiding the possibility that the electrode 13 will be damaged by cracks or glass fragments during polishing, for example, when the smooth plate 24 is peeled off.
また、平滑板24の大きさを透明板21のそれ
と同等ないしは大にするときは、平滑板24と透
明電極13間に、透明板21の研磨時に生ずるク
ラツク破片の混入を回避てきる効果がある。 Furthermore, when the size of the smooth plate 24 is made equal to or larger than that of the transparent plate 21, there is an effect of avoiding the inclusion of crack fragments generated during polishing of the transparent plate 21 between the smooth plate 24 and the transparent electrode 13. .
尚、上述した例では厚みの大なる透明板21か
ら厚みの小さい透明薄板15を得るのに、粗研磨
後に角度θ1の斜め周面研磨を行い、その後鏡面
研磨を行つた場合であるが、第18図に示すよう
に粗研磨に斜め周面研磨を行い、その後、第19
図に示すように、粗研磨と、鏡面研磨を行うこと
もできる。 In the example described above, in order to obtain the thin transparent plate 15 with a small thickness from the transparent plate 21 with a large thickness, diagonal peripheral surface polishing at an angle θ 1 is performed after rough polishing, and then mirror polishing is performed. As shown in Fig. 18, diagonal peripheral surface polishing is performed for rough polishing, and then
As shown in the figure, rough polishing and mirror polishing can also be performed.
また、上述した例では、透明電極、すなわち透
明導電膜13が例えば櫛歯状にパターン化されて
いる場合であるが、透明電極13がパターン化さ
れずに全面的に形成されている場合に本発明を適
用することができ、この場合は、第4図で説明し
たフオトレジスト膜23の被着工程と、透明導電
膜に対するエツチング工程が省略される。 Furthermore, in the above-mentioned example, the transparent electrode, that is, the transparent conductive film 13 is patterned, for example, in a comb-like shape, but when the transparent electrode 13 is not patterned and is formed entirely, The invention can be applied, and in this case, the step of depositing the photoresist film 23 and the step of etching the transparent conductive film explained in FIG. 4 are omitted.
そして、本発明によれば上述したようにターゲ
ツトの透明導電膜を、特別のパターンとしたこと
によつてターゲツトの浮遊容量の低減化と電子ビ
ームの走査の直線性の向上等をはかることができ
る。すなわち第1図で説明したように、偏向手段
が、管体1内に設けられた静電偏向用導電層9に
よつて構成するような撮像管においては、フイー
ルドメツシユ電極7の端子導出を通常の撮像管に
おけるように管体1のステムに配置した端子ピン
23から行うことは、端子ピン23とフイールド
メツシユ電極7を連結する導線が静電偏向用導電
層8によつて囲まれる空間内を通過することにな
つてその静電偏向電界に乱れを生じさせるとか、
静電偏向用導電層との電気的絶縁性が問題となる
等好ましくない。 According to the present invention, as described above, by forming the transparent conductive film of the target into a special pattern, it is possible to reduce the stray capacitance of the target and improve the linearity of electron beam scanning. . That is, as explained in FIG. 1, in an image pickup tube in which the deflection means is constituted by the electrostatic deflection conductive layer 9 provided in the tube body 1, the terminal lead-out of the field mesh electrode 7 is What is done from the terminal pin 23 disposed on the stem of the tube body 1 as in a normal image pickup tube is the space in which the conducting wire connecting the terminal pin 23 and the field mesh electrode 7 is surrounded by the conductive layer 8 for electrostatic deflection. The electrostatic deflection electric field may be disturbed by passing through the electrostatic field.
This is undesirable because electrical insulation with the conductive layer for electrostatic deflection becomes a problem.
そこで、この種撮像管においては、特にフイー
ルドメツシユ電極7からの端子導出を、前述した
ように管体1の前方のリング電極11から行うよ
うにしている。 Therefore, in this type of image pickup tube, the terminals from the field mesh electrode 7 are led out from the ring electrode 11 at the front of the tube body 1, as described above.
このような構成による撮像管においては、例え
ばターゲツトに+50Vの電圧が与えられ、フイー
ルドメツシユ電極5には300〜400V、又静電偏向
導電層8には中心電圧が330Vをなしこれに水
平、垂直偏向電圧が重畳された電圧が印加される
が、上述の構成による場合フイールドメツシユ電
極7への給電電圧が印加されたインジウムリング
12による電界が、ターゲツト4及びフイールド
メツシユ電極7間の前方周囲の電界の周辺部を屈
曲させターゲツトに向かう電子ビームを彎曲させ
てその直線性を損うおそれが生じる。 In an image pickup tube having such a configuration, for example, a voltage of +50V is applied to the target, a voltage of 300 to 400V is applied to the field mesh electrode 5, and a center voltage of 330V is applied to the electrostatic deflection conductive layer 8, which is horizontally applied. A voltage on which a vertical deflection voltage is superimposed is applied, but in the above-described configuration, the electric field due to the indium ring 12 to which the power supply voltage to the field mesh electrode 7 is applied is applied to the front part between the target 4 and the field mesh electrode 7. There is a risk that the periphery of the surrounding electric field will be bent and the electron beam heading towards the target will be curved and its linearity will be lost.
ところが本発明構成によれば、ターゲツト4の
透明導電膜13に、その電子ビーム走査領域13
1をとり囲む外周領域134を設けたことによ
り、前述したインジウムリング12による電界の
侵入を防止できるので、この電界の侵入による電
子ビームの直線性を阻害する不都合を回避できる
という効果が得られる。 However, according to the configuration of the present invention, the electron beam scanning area 13 of the transparent conductive film 13 of the target 4 is
By providing the outer circumferential region 134 surrounding the indium ring 1, it is possible to prevent the electric field from entering due to the indium ring 12 described above, and it is possible to avoid the problem of inhibiting the linearity of the electron beam due to the penetration of the electric field.
しかしながら外周領域134を走査領域131
以外の全域に亘つて設けるときは、ターゲツト4
に係わる寄生容量が大となつて著しい残像が生
じ、またS/Nが低下するという問題が生じてし
まう。ところが本発明においては、特にその外周
領域134をフエースプレートの周縁に沿うよう
に円弧状に形成し、方形状をなす走査領域131
との間に半月状の大きな欠除部133が生じるよ
うにしたので、このような不要な容量の寄生を効
果的に回避することができ、残像の問題、S/N
の低下を効果的に回避することができたものであ
る。 However, the outer peripheral area 134 is scanned by the scanning area 131.
When installing over an area other than Target 4
This increases the parasitic capacitance, causing significant afterimages and lowering the S/N ratio. However, in the present invention, the outer circumferential area 134 is formed in an arc shape along the periphery of the face plate, and the scanning area 131 is rectangular.
Since a large half-moon-shaped cutout 133 is created between the
It was possible to effectively avoid the decrease in .
第1図は撮像管の略線的構成図、第2図はその
要部の断面図、第3図はその電極の平面図、第4
図ないし第15図はその面板の一例の各工程にお
ける略線的断面図、第16図及び第17図は夫々
斜め周面研磨の角度と、砥石の粗度と、傷の発生
数の測定結果を示す図、第18図及び第19図は
本発明の他の例における一部の製造工程の略線的
断面図である。
1は撮像管管体、20は撮像管用面板、2は透
明基板、3は光学色フイルタ、15は透明薄板、
4はターゲツト、7はフイールドメツシユ電極、
13は透明導電膜、131はその電子ビーム走査
領域、132は端子導出領域、134は外周領域
である。
Fig. 1 is a schematic diagram of the configuration of the image pickup tube, Fig. 2 is a sectional view of its main parts, Fig. 3 is a plan view of its electrodes, and Fig. 4 is a schematic diagram of the configuration of the image pickup tube.
Figures 1 to 15 are schematic cross-sectional views of an example of the face plate in each process, and Figures 16 and 17 are the measurement results of the angle of oblique peripheral surface polishing, the roughness of the grindstone, and the number of scratches, respectively. 18 and 19 are schematic cross-sectional views of some manufacturing steps in other examples of the present invention. 1 is an image pickup tube tube body, 20 is a face plate for the image pickup tube, 2 is a transparent substrate, 3 is an optical color filter, 15 is a transparent thin plate,
4 is the target, 7 is the field mesh electrode,
13 is a transparent conductive film, 131 is its electron beam scanning area, 132 is a terminal lead-out area, and 134 is an outer peripheral area.
Claims (1)
像管管体と、該管体の前端面にインジウムリング
を介して封着され、内面に透明導電膜と光導電膜
とが配置された円板状フエースプレートと、該フ
エースプレートの内面に対向して配置されたフイ
ールドメツシユ電極とを具備する撮像管におい
て、前記インジウムリング内に、前記フイールド
メツシユ電極の支持部が埋込まれて、該フイール
ドメツシユ電極の機械的支持と給電端子導出とが
なされ、かつ前記円板状フエースプレートの内面
に配置された透明導電膜が、外部に電気信号を導
出するための端子導出領域と、これより夫々延長
して設けられた方形状の電子ビーム走査領域と、
該走査領域の外側に前記フエースプレートの周縁
に沿つて円弧状に延在し前記走査領域との間にほ
ぼ半月状の欠除部を介して対向する外周領域とを
有してなることを特徴とする撮像管。1. An image pickup tube body in which an electron gun and its attached structure are accommodated, and a disk sealed to the front end surface of the tube body via an indium ring, and a transparent conductive film and a photoconductive film are arranged on the inner surface. In an image pickup tube comprising a shaped face plate and a field mesh electrode disposed opposite to the inner surface of the face plate, a supporting part of the field mesh electrode is embedded in the indium ring, and the supporting part of the field mesh electrode is embedded in the indium ring. A transparent conductive film, which mechanically supports the field mesh electrode and leads out a power supply terminal, and which is arranged on the inner surface of the disc-shaped face plate, has a terminal lead-out area for leading out electrical signals to the outside, and a transparent conductive film arranged on the inner surface of the disc-shaped face plate. a rectangular electron beam scanning area extending from each other;
It is characterized by having an outer circumferential area extending in an arc shape along the periphery of the face plate outside the scanning area and facing the scanning area with an approximately half-moon-shaped cutout interposed therebetween. An image pickup tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12019185A JPS60258835A (en) | 1985-06-03 | 1985-06-03 | Image pickup tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12019185A JPS60258835A (en) | 1985-06-03 | 1985-06-03 | Image pickup tube |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54161311A Division JPS6057175B2 (en) | 1979-12-11 | 1979-12-11 | Manufacturing method for image pickup tube face plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60258835A JPS60258835A (en) | 1985-12-20 |
| JPS6236343B2 true JPS6236343B2 (en) | 1987-08-06 |
Family
ID=14780162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12019185A Granted JPS60258835A (en) | 1985-06-03 | 1985-06-03 | Image pickup tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258835A (en) |
-
1985
- 1985-06-03 JP JP12019185A patent/JPS60258835A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60258835A (en) | 1985-12-20 |
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