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JPS6236367B2 - - Google Patents
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JPS6236367B2 - - Google Patents

Info

Publication number
JPS6236367B2
JPS6236367B2 JP56094781A JP9478181A JPS6236367B2 JP S6236367 B2 JPS6236367 B2 JP S6236367B2 JP 56094781 A JP56094781 A JP 56094781A JP 9478181 A JP9478181 A JP 9478181A JP S6236367 B2 JPS6236367 B2 JP S6236367B2
Authority
JP
Japan
Prior art keywords
saturable reactor
series
switching regulator
voltage
amorphous metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56094781A
Other languages
Japanese (ja)
Other versions
JPS57210612A (en
Inventor
Yasunobu Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP56094781A priority Critical patent/JPS57210612A/en
Priority to US06/379,861 priority patent/US4451876A/en
Priority to DE19823221839 priority patent/DE3221839A1/en
Publication of JPS57210612A publication Critical patent/JPS57210612A/en
Publication of JPS6236367B2 publication Critical patent/JPS6236367B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/14Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Soft Magnetic Materials (AREA)

Description

【発明の詳細な説明】 本発明は、スイツチング・レギユレータの定電
圧方式の一つとしての磁気増幅器方式の特性改良
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving the characteristics of a magnetic amplifier system as one of the constant voltage systems of a switching regulator.

この種のスイツチング・レギユレータの一例を
第1図に示す。図において1はスイツチング素
子、2は主トランス、3;4は主トランス2の1
次巻線および2次巻線である。5は可飽和リアク
トル、6は整流回路、7は定電圧制御回路、8
a;8bは直流出力端子である。
An example of this type of switching regulator is shown in FIG. In the figure, 1 is the switching element, 2 is the main transformer, 3; 4 is 1 of the main transformer 2.
These are the next winding and the secondary winding. 5 is a saturable reactor, 6 is a rectifier circuit, 7 is a constant voltage control circuit, 8
a; 8b is a DC output terminal.

次にこの回路の動作を説明する。 Next, the operation of this circuit will be explained.

直流電圧が印加された一次巻線3に接続された
スイツチング素子1のON−OFFにより主トラン
ス2の二次巻線4にパルス状の電圧が誘起され
る。この電圧は可飽和リアクトル5を通つて、整
流回路を介し、出力端子8a;8bに直流電圧と
なつて現われる。この時、正パルス電流i1により
可飽和リアクトル5は第4図aの飽和点Aまで達
し、i1が零になつた時にBr点に戻る。負パルス電
流i2は、制御回路7によつて出力直流電圧の設定
値にほゞ反比例して変化する。すなわち、負パル
ス電流i2は制御電流であり、この値が大きくなれ
ば、リセツトされる動作点はB点→C点へと次第
に移つてゆく。i2が大きくなりC点→A点の間で
の動作を繰り返した時が可飽和リアクトルのイン
ピダンスは最大であり、電圧降下も最大となる。
このように制御電流i2により可飽和リアクトルに
よる電圧降下を変化させ、出力直流電圧を一定に
する方式が磁気増幅器方式である。
A pulse-like voltage is induced in the secondary winding 4 of the main transformer 2 by turning on and off the switching element 1 connected to the primary winding 3 to which a DC voltage is applied. This voltage passes through the saturable reactor 5, a rectifier circuit, and appears as a DC voltage at the output terminals 8a; 8b. At this time, the saturable reactor 5 reaches the saturation point A in FIG. 4a due to the positive pulse current i 1 and returns to the Br point when i 1 becomes zero. The negative pulse current i 2 is changed by the control circuit 7 in approximately inverse proportion to the set value of the output DC voltage. That is, the negative pulse current i2 is a control current, and as this value increases, the operating point to be reset gradually shifts from point B to point C. When i 2 increases and the operation between point C and point A is repeated, the impedance of the saturable reactor is at its maximum and the voltage drop is also at its maximum.
The magnetic amplifier method is a method in which the voltage drop due to the saturable reactor is changed by the control current i 2 and the output DC voltage is kept constant.

本方式の設計上の重要な問題は、可飽和リアク
トルの材料の選択である。材料性能としては、(i)
第4図aにおける残留磁束Brが大きいこと、(ii)
保磁力Hcが小さいこと、(iii)できるだけ薄い板で
あること等が要求される。これまでは、前記性能
を満足するものとして、主に50%Ni系のパーマ
ロイが主流であつた。この種の磁芯は、第2図に
示すように約25μ程度の薄板を渦巻状に巻き込み
トロイダル状の形状である。これは、渦巻状の
まゝ約1000℃の高温で熱処理されるため、渦巻状
にする前に電気泳動法等により表面にMgOが塗
布されている。これは、最終的には渦巻状したパ
ーマロイ板の上下層間の絶縁体となり、高周波動
作時の渦電流損を減少させる役目がある。磁芯
は、第3図に示すように10のようなトロイダル
ボビンの中に収納され、巻線11による巻線時の
応力が直接磁芯に伝わらないように工夫されてい
る。この種の材料のB−H曲線は、第4図aに示
すようにHc〓0.1Oeであるが、数KHz程度までは
充分に実用可能な材料である。しかし、スイツチ
ング・レギユレータの周波数が数10KHz〜数
100KHzと高くなるにつれて鉄損の増加がひど
く、激しい温度上昇を防ぐことができなくなつ
た。また、渦流損も無視することが困難となり、
15μ以下の極薄材の要求が強くなつた。そのた
め、熱処理等の際の取扱い上の困難さが目立つて
きたのみならず素材の大巾なコストアツプを引き
越すに到つた。
An important design issue for this system is the selection of the material for the saturable reactor. As for material performance, (i)
(ii) The residual magnetic flux Br in Figure 4 a is large;
It is required that the coercive force Hc be small, and (iii) that the plate be as thin as possible. Until now, 50% Ni-based permalloy has been the mainstream as a material that satisfies the above performance. As shown in FIG. 2, this type of magnetic core has a toroidal shape in which a thin plate of about 25 μm is spirally wound. This is heat-treated at a high temperature of about 1000°C while it is in a spiral shape, so MgO is applied to the surface by electrophoresis or the like before forming it into a spiral shape. This ultimately becomes an insulator between the upper and lower layers of the spiral permalloy plate, and serves to reduce eddy current loss during high frequency operation. The magnetic core is housed in a toroidal bobbin such as 10 as shown in FIG. 3, and is designed so that stress during winding by the winding 11 is not directly transmitted to the magnetic core. The B-H curve of this type of material is Hc = 0.1 Oe, as shown in Figure 4a, but it is a material that is sufficiently practical up to several KHz. However, the frequency of the switching regulator ranges from several tens of kilohertz to several
As the frequency increased to 100KHz, iron loss increased significantly and it became impossible to prevent severe temperature rises. In addition, it becomes difficult to ignore eddy current loss,
Demand for ultra-thin materials of 15μ or less has become stronger. For this reason, not only has the difficulty in handling during heat treatment etc. become noticeable, but also the cost of the material has increased considerably.

本発明の目的は、上記従来技術の限界に挑戦
し、温度上昇の少ない組立て容易な磁気増幅器方
式を用いたスイツチング・レギユレータを提供す
ることである。
It is an object of the present invention to overcome the limitations of the prior art and provide a switching regulator using a magnetic amplifier system that causes less temperature rise and is easy to assemble.

上記目的を達成するために、本発明のスイツチ
ング・レギユレータは、トランスの一次巻線に直
列に接続され、周期的に断続するスイツチング素
子、前記トランスの出力の二次巻線に直列に接続
される可飽和リアクトル、さらに前記可飽和リア
クトルを直列に接続される整流回路、前記整流回
路の出力端の直流電圧を一定にするための制御回
路により前記可飽和リアクトルの制御電流を制御
する磁気増幅器方式を用いたスイツチング・レギ
ユレータにおいて、前記可飽和リアクトル用の磁
芯として、その組成がCoaMbXcで表示され、ここ
にCoはコバルト元素、MはCo以外の金属元素、
Xは非金属元素を表わし、それぞれ原子%で50
a、30b、30cであり、且つa+b+c=
100であるコバルト基アモルフアス金属磁性材料
を用いたことを特徴としている。
In order to achieve the above object, the switching regulator of the present invention includes a switching element connected in series to the primary winding of the transformer and periodically intermittent, and a switching element connected in series to the secondary winding of the output of the transformer. A magnetic amplifier method is provided in which the control current of the saturable reactor is controlled by a saturable reactor, a rectifier circuit connected in series with the saturable reactor, and a control circuit for keeping the DC voltage at the output end of the rectifier circuit constant. In the switching regulator used, the composition of the magnetic core for the saturable reactor is expressed as Co a M b X c , where Co is a cobalt element, M is a metal element other than Co,
X represents a nonmetallic element, each with an atomic percent of 50
a, 30b, 30c, and a+b+c=
It is characterized by using a cobalt-based amorphous metal magnetic material of 100%.

以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第4図bは、本発明のスイツチング・レギユレ
ータに用いられた25μ厚のアモルフアス金属磁性
材料のB−H曲線である。この図から明らかなよ
うに、組成(〓〓〓〓)78Si13B9の本材料を可飽
和リアクトルとして用いた場合には、50%Ni系
のパーマロイに比してHcが極端に小さいために
著しく鉄損が減少することが予想される。こゝで
いうアモルフアス金属磁性材料とは、前記組成の
溶融液を高速に回転する片ロールあるいは両ロー
ルの表面に射出させ、急速冷却することにより、
瞬時に第2図のような渦巻状に作成されたものを
言う。その後行なわれる磁場中もしくは普通の熱
処理が必要であるが、その温度は高々300℃〜500
℃の範囲であり、従来材に比較すると著しく低
い。そのため、従来の50%Ni系パーマロイのよ
うに、溶着を防ぐための層間絶縁物は必要ない
が、渦流損を減少させるためには絶縁物を層間に
入れてもよい。一般に、アモルフアス金属磁性材
料は、急速冷却凝固の際に、表面が僅かに酸化さ
れるので層間絶縁物が必要でない場合が多い。最
終的には、従来技術と同じように、第3図のトロ
イダル状のボビン10の中に収納し、巻線して可
飽和リアクトルとするが、応力に対して従来品ほ
ど敏感ではないので、これも含めて全体として組
立作業が極めて簡便となる。第5図は、50KHz
のスイツチング周波数にて動作させ可飽和リアク
トルの表面温度を測定した結果である。14は従
来の50%Ni系パーマロイを、15は本発明に使
用したアモルフアス金属材料をそれぞれ用いた場
合のボビン部の表面の温度上昇を示す。この図か
らわかるように、従来の25μ厚の50%Ni系パー
マロイは約10分間で40℃の温度上昇を越すのに対
して、本発明に使用した25μ厚のアモルフアス金
属磁性材料の場合には、前者の約1/2〜1/3の温度
上昇に抑えられることがわかる。これは、第4図
bにアモルフアス金属磁性材料のB−H曲線に示
されるように、Hc〓0.01Oeで従来品の約1/10倍
であることが主たる原因である。この他に、アモ
ルフアス金属磁性材料の固有電気抵抗が130×
10-6〔Ω−cm〕と50%Ni系パーマロイに比較して
数倍大きいこと、またアモルフアス金属の表面に
は薄い酸化物被服が作成されているために、巻鉄
芯とした場合の層間絶縁が保たれ渦流損がかなり
減少することが、もう一つの大きな理由である。
FIG. 4b is a B-H curve of a 25μ thick amorphous metal magnetic material used in the switching regulator of the present invention. As is clear from this figure, when this material with the composition (〓〓〓〓) 78 Si 13 B 9 is used as a saturable reactor, Hc is extremely small compared to 50% Ni-based permalloy. It is expected that iron loss will decrease significantly. The amorphous metal magnetic material referred to here is made by injecting a molten liquid with the above composition onto the surface of one or both rolls rotating at high speed and rapidly cooling it.
It refers to something that is instantly created in a spiral shape as shown in Figure 2. Subsequent heat treatment in a magnetic field or ordinary heat treatment is required, but the temperature is at most 300°C to 500°C.
℃ range, which is significantly lower than conventional materials. Therefore, unlike conventional 50% Ni-based permalloy, there is no need for an interlayer insulator to prevent welding, but an insulator may be inserted between the layers to reduce eddy current loss. Generally, the surface of amorphous metal magnetic materials is slightly oxidized during rapid cooling and solidification, so interlayer insulators are not required in many cases. Finally, as with the prior art, it is housed in the toroidal bobbin 10 shown in Fig. 3 and wound to form a saturable reactor, but it is not as sensitive to stress as the conventional product. Including this, the assembly work as a whole becomes extremely simple. Figure 5 shows 50KHz
These are the results of measuring the surface temperature of a saturable reactor operated at a switching frequency of . 14 shows the temperature rise on the surface of the bobbin portion when the conventional 50% Ni-based permalloy is used, and 15 shows the amorphous metal material used in the present invention. As can be seen from this figure, the conventional 25μ thick 50% Ni-based permalloy exceeds a temperature rise of 40°C in about 10 minutes, whereas the 25μ thick amorphous metal magnetic material used in the present invention , it can be seen that the temperature rise can be suppressed to about 1/2 to 1/3 of the former. The main reason for this is that, as shown in the B-H curve of the amorphous metal magnetic material in FIG. 4b, Hc = 0.01 Oe, which is about 1/10 times that of the conventional product. In addition, the specific electrical resistance of amorphous metal magnetic material is 130×
10 -6 [Ω-cm] is several times larger than that of 50% Ni-based permalloy, and since a thin oxide coating is created on the surface of amorphous metal, the interlayer resistance when using a wound iron core is Another major reason is that insulation is maintained and eddy current losses are significantly reduced.

以上、本発明の実施例を用いて説明した通り、
アモルフアス金属磁性材料を用いた本発明の方式
を用いれば、可飽和リアクトルの温度上昇を極端
に抑えることができ、高信頼性、高効率な磁気増
幅器方式のスイツチング・レギユレータを実現す
ることができる。
As explained above using the embodiments of the present invention,
By using the method of the present invention using an amorphous metal magnetic material, the temperature rise of the saturable reactor can be extremely suppressed, and a highly reliable and highly efficient magnetic amplifier type switching regulator can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は公知の回路図、第2図は公知の磁芯形
状、第3図は公知の可飽和リアクトル形状、第4
図aは公知の磁芯の特性、第4図bは本発明の方
式に用いられたアモルフアス材料の特性、第5図
は本発明と公知例との温度特性比較図。
Figure 1 is a known circuit diagram, Figure 2 is a known magnetic core shape, Figure 3 is a known saturable reactor shape, and Figure 4 is a known saturable reactor shape.
Figure a shows the characteristics of a known magnetic core, Figure 4b shows the characteristics of an amorphous material used in the method of the present invention, and Figure 5 shows a comparison of the temperature characteristics of the present invention and a known example.

Claims (1)

【特許請求の範囲】[Claims] 1 トランスの一次巻線に直列に接続され、周期
的に断続するスイツチング素子、前記トランスの
出力の二次巻線に直列に接続される可飽和リアク
トル、さらに前記可飽和リアクトルを直列に接続
される整流回路、前記整流回路の出力端の直流電
圧を一定にするための制御回路により前記可飽和
リアクトルの制御電流を制御する磁気増幅器方式
を用いたスイツチング・レギユレータにおいて、
前記可飽和リアクトル用の磁芯として、その組成
がCoaMbXcで表示され、ここにCoはコバルト元
素、MはCo以外の金属元素、Xは非金属元素を
表わしそれぞれ原子%で50a、30b、30c
であり、且つa+b+c=100であるコバルト基
アモルフアス金属磁性材料を用いたことを特徴と
するスイツチング・レギユレータ。
1. A switching element connected in series to the primary winding of the transformer and periodically intermittent, a saturable reactor connected in series to the secondary winding of the output of the transformer, and further connected in series with the saturable reactor. A switching regulator using a magnetic amplifier method that controls the control current of the saturable reactor by a rectifier circuit and a control circuit for keeping the DC voltage at the output end of the rectifier circuit constant,
The composition of the magnetic core for the saturable reactor is expressed as Co a M b , 30b, 30c
A switching regulator characterized in that it uses a cobalt-based amorphous metal magnetic material in which a+b+c=100.
JP56094781A 1981-06-19 1981-06-19 Switching regulator Granted JPS57210612A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56094781A JPS57210612A (en) 1981-06-19 1981-06-19 Switching regulator
US06/379,861 US4451876A (en) 1981-06-19 1982-05-19 Switching regulator
DE19823221839 DE3221839A1 (en) 1981-06-19 1982-06-09 LOCK CONVERTER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56094781A JPS57210612A (en) 1981-06-19 1981-06-19 Switching regulator

Publications (2)

Publication Number Publication Date
JPS57210612A JPS57210612A (en) 1982-12-24
JPS6236367B2 true JPS6236367B2 (en) 1987-08-06

Family

ID=14119626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56094781A Granted JPS57210612A (en) 1981-06-19 1981-06-19 Switching regulator

Country Status (1)

Country Link
JP (1) JPS57210612A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121805A (en) * 1982-12-28 1984-07-14 Toshiba Corp Manufacture of wound core
EP0123098A3 (en) * 1983-03-28 1986-01-29 Intronics, Inc. Switching power supply regulation
JPS63186560A (en) * 1987-05-15 1988-08-02 Toshiba Corp Voltage resonance type high frequency switching circuit

Also Published As

Publication number Publication date
JPS57210612A (en) 1982-12-24

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