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JPS6236387B2 - - Google Patents
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JPS6236387B2 - - Google Patents

Info

Publication number
JPS6236387B2
JPS6236387B2 JP57129321A JP12932182A JPS6236387B2 JP S6236387 B2 JPS6236387 B2 JP S6236387B2 JP 57129321 A JP57129321 A JP 57129321A JP 12932182 A JP12932182 A JP 12932182A JP S6236387 B2 JPS6236387 B2 JP S6236387B2
Authority
JP
Japan
Prior art keywords
probe card
probe
dewar
insulating container
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57129321A
Other languages
Japanese (ja)
Other versions
JPS5919343A (en
Inventor
Masao Ookubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Electronic Materials Corp
Original Assignee
Japan Electronic Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Electronic Materials Corp filed Critical Japan Electronic Materials Corp
Priority to JP57129321A priority Critical patent/JPS5919343A/en
Publication of JPS5919343A publication Critical patent/JPS5919343A/en
Publication of JPS6236387B2 publication Critical patent/JPS6236387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】 本発明は半導体ウエハーの低温試験装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a low temperature testing apparatus for semiconductor wafers.

最近、例えばコンピユータの計算速度をより高
速化する目的で、低温で動作する半導体素子の開
発が盛んである。そのために必要な、低温におけ
る素子のテストは、半導体ウエハー上に形成され
た個々のチツプを切り出し、各テツプ毎にテスト
リードを取り付け、個々に保護手段をほどこした
上、例えば液体窒素等の寒剤に浸けて、その電気
的特性テストをする方法がとられている。しか
し、このような方法では、テストに膨大な時間と
労力および経費を要することは当然である。
Recently, there has been active development of semiconductor devices that operate at low temperatures, for example, in order to further increase the calculation speed of computers. For this purpose, testing of devices at low temperatures is carried out by cutting out individual chips formed on a semiconductor wafer, attaching test leads to each chip, applying protective measures to each chip, and then exposing the chip to a cryogen such as liquid nitrogen. The method used is to immerse it in water and test its electrical characteristics. However, it is natural that such a method requires a huge amount of time, effort, and expense for testing.

本発明の目的は、従来行われている低温におけ
る半導体素子の試験に伴う、上記の欠点を排除
し、常温における試験の場合と同様プローブカー
ドを用い、ウエハー上に形成された個々のチツプ
を低温状態において順次連続的にテストすること
のできる、半導体ウエハー低温試験装置を提供す
ることにある。
The purpose of the present invention is to eliminate the above-mentioned drawbacks associated with the conventional testing of semiconductor devices at low temperatures, and to test individual chips formed on a wafer at low temperatures using a probe card as in the case of testing at room temperature. An object of the present invention is to provide a semiconductor wafer low-temperature testing device capable of sequentially and continuously testing various conditions.

上記の目的のため本発明は、試験すべき半導体
ウエハーの保持台を内蔵し、上記半導体ウエハー
を冷却するための寒剤を入れる断熱容器と、探針
先端部を透視するための透視窓の設けられたプロ
ーブカードと、上記断熱容器を載せる断熱容器架
台と、上記プローブカードを保持するプローブカ
ード保持手段と、上記プローブカードの上記透視
窓よりプローブカードの探針先端部を観察するた
めの顕微鏡とから成り、かつ上記断熱容器上部の
開口部に、上記プローブカードが所定の範囲にわ
たり上記開口部との間に気密を保つて3次元的に
密着変位し得る手段を設け、上記断熱容器架台と
上記プローブカード保持手段の少なくとも一方
に、互の相対的位置を変位させる手段を設けた装
置より成り立つている。
For the above purpose, the present invention includes a built-in holding stand for the semiconductor wafer to be tested, an insulating container containing a cryogen for cooling the semiconductor wafer, and a see-through window for seeing through the tip of the probe. a probe card, a heat insulating container stand on which the heat insulating container is placed, a probe card holding means for holding the probe card, and a microscope for observing the tip of the probe of the probe card through the see-through window of the probe card. and a means is provided in the opening of the upper part of the insulating container so that the probe card can be displaced three-dimensionally in close contact with the opening over a predetermined range while maintaining airtightness between the probe card and the insulating container stand and the probe. The device comprises a device in which at least one of the card holding means is provided with means for displacing the relative position of the card holding means.

以下に本発明の実施例を図面に基づいて説明す
る。第1図は本発明実施例の構成を示す。プロー
ブカード202の中応開口部203より下方に延
びる探針211(図では2本しか示さず)の先端
およびテストすべき半導体ウエハー212は、透
明石英板201から成る透視窓を通じて、顕微鏡
11で透視される。ウエハー212の保持台21
4は断熱容器、即ち、外側容器218と断熱真空
219および内側容器217とから成るデユワー
容器内に取付けられており、適当な寒剤、例えば
液体窒素220で寒冷状態に保たれている。保持
台214には液体窒素220の最高液面検出手段
とウエハー冷却温度計とが設けられているがこの
図には示されていない。デユワー容器全体は、レ
バー15で回転自在に構成された回転テーブル1
4と、ネジ17および18で左右前後に変位可能
なスライドベツド16から成る容器台に取付けら
れている。プローブ・カード202はカードホル
ダー12に保持され、上下調節ネジ13により上
下に変位し得るようになつている。デユワー容器
の天板210からは頚状部207が上方に延び、
その上端はO−リング204を介してプローブカ
ード202に接し、頚状部207はベローズ20
7aで囲まれている。ベローズ207aの下端は
デユワー容器の天板210に溶着されているが、
上端は、プローブカード202と機械的接触を保
つているだけである。
Embodiments of the present invention will be described below based on the drawings. FIG. 1 shows the configuration of an embodiment of the present invention. The tips of the probes 211 (only two are shown in the figure) extending downward from the intermediate opening 203 of the probe card 202 and the semiconductor wafer 212 to be tested are seen through the microscope 11 through the see-through window made of the transparent quartz plate 201. be done. Holding stand 21 for wafer 212
4 is mounted in an insulated container, ie a dewar container consisting of an outer container 218, an insulated vacuum 219 and an inner container 217, and is kept cold with a suitable cryogen, for example liquid nitrogen 220. The holding table 214 is provided with means for detecting the highest level of liquid nitrogen 220 and a wafer cooling thermometer, but these are not shown in this figure. The entire dewar container is mounted on a rotary table 1 which is configured to be freely rotatable with a lever 15.
4 and a slide bed 16 which can be moved left and right and back and forth using screws 17 and 18. The probe card 202 is held by the card holder 12 and can be vertically displaced by a vertical adjustment screw 13. A neck 207 extends upward from the top plate 210 of the dewar container,
Its upper end is in contact with the probe card 202 via an O-ring 204, and its neck 207 is connected to the bellows 202.
It is surrounded by 7a. The lower end of the bellows 207a is welded to the top plate 210 of the dewar container.
The top end only maintains mechanical contact with the probe card 202.

上記のような構成において、ウエハー212上
のあるチツプのテストが終われば、上下調節ネジ
13を操作してプローブカード202を0.1〜0.3
mm持ち上げ探針211をチツプの端子よりはず
し、ネジ17,18およびレバー15を調整して
探針211が次にテストすべきチツプの所定のテ
スト端子に対応するよう、デユワー容器全体を変
位させた後、再び上下調節ネジ13によりプロー
ブカード202を下降させ、探針211をチツプ
の所定のテスト端子に接触させる。プローブカー
ド202の上下変位量0.1〜0.3mmは、上記O−リ
ング204の弾性内にあり、従つて、デユワー容
器の変位に際して、O−リング204とプローブ
カード202との接触部との間には気密性が保た
れた状態で滑りが生じ、探針211とウエハー2
12との間の相対的な位置の変更に際してデユワ
ー容器内に巨視的熱擾乱を与えることはない。な
お、ベローズ207aは、その弾力によりプロー
ブカード202を上方に押し上げるスプリングの
役をはたし、上記したプローブカードの上方変位
操作を容易にしている。
In the above configuration, after testing a certain chip on the wafer 212, operate the vertical adjustment screw 13 to adjust the probe card 202 by 0.1 to 0.3.
The probe 211 was lifted up by 1 mm and removed from the terminal of the chip, and the screws 17, 18 and the lever 15 were adjusted to displace the entire dewar container so that the probe 211 corresponded to a predetermined test terminal of the chip to be tested next. After that, the probe card 202 is lowered again using the vertical adjustment screw 13 to bring the probe 211 into contact with a predetermined test terminal of the chip. The amount of vertical displacement of the probe card 202 of 0.1 to 0.3 mm is within the elasticity of the O-ring 204, and therefore, when the dewar container is displaced, there is a gap between the O-ring 204 and the contact portion of the probe card 202. Slippage occurs while airtightness is maintained, and the probe 211 and wafer 2
12 does not cause any macroscopic thermal disturbance within the dewar container. Note that the bellows 207a acts as a spring that pushes the probe card 202 upward due to its elasticity, thereby facilitating the above-described upward displacement operation of the probe card.

以上のように、本発明によれば、ウエハー上に
形成された各チツプを切り出して個々に低温状態
でテストするのではなく、ウエハー全体を低温に
保つたまゝ、常温におけるテストの場合と同様、
順次個々のチツプをテストすることが可能とな
り、低温における半導体素子のテストの能率化へ
貢献には計り知れないものがあることは、以上の
説明より明らかであろう。なお本発明の構成にお
いて重要な役割りをはたすデユワー容器に関し、
若干の補足説明を第2図に基づいて行う。
As described above, according to the present invention, instead of cutting out each chip formed on a wafer and individually testing it at low temperature, the entire wafer is kept at a low temperature and the chips are tested at room temperature.
It is clear from the above explanation that it has become possible to test individual chips one after another, and that this will have an immeasurable contribution to the efficiency of testing semiconductor devices at low temperatures. Regarding the dewar container, which plays an important role in the structure of the present invention,
Some supplementary explanation will be given based on FIG.

第2図においてパイプ223はデユワー容器の
断熱空間219を排除するための排気パイプで、
排気後は溶着封止されるか、真空バルブを設けて
閉止されている。デユワー容器本体は熱伝性の悪
いステンレス鋼でつくり、内部中央に設けられた
ウエハー保持台214には熱伝性の良い金属、例
えば銅を用いる。熱電対216および213は、
それぞれ注入液体窒素の最高液面高の検出、およ
びウエハー保持台上面の温度検出用である。両熱
電対のリードは、ハメーチツクシール208を通
じて外部へ導かれている。液体窒素220は液体
窒素供給パイプ222を通じてデユワー内に供給
され、蒸発ガスはパイプ205から外部に放出さ
れる。デユワー内側容器の外周に巻かれたヒータ
215と、天板210上部に設けられた頚状部2
07に巻かれたヒータ206は、テストが終つて
ウエハーを取り出す際、デユワー内の液体窒素を
取り出した後プローブカード202を取りはずす
前に、デユワー全体を常温にまで加熱し、外気の
侵入時にデユワー内の露結を防止するために設け
られている。デユワーの内側容器217の底板の
外側に接触している活性炭221は、断熱空間内
に残留するガスを吸着する。なお、液体窒素をデ
ユワーに供給するに先立つて、液体窒素供給パイ
プ222または蒸発窒素ガス放出用のパイプ20
5を通じてデユワー内に乾燥窒素ガスを導き、内
部の空気を乾燥窒素で置換しておく必要がある。
液体窒素注入後は液体窒素供給パイプ222と蒸
発窒素ガス放出用のパイプ205とを、側面長さ
方向に小さな切れ目を入れた弾力性の良いゴム管
で連結しておく、このようにすることによつてデ
ユワー内の蒸発窒素ガスはゴムの弾力に抗して切
れ目から徐々に大気中に放出され、デユワー内は
常に大気圧より僅かに高圧に保たれるので、デユ
ワー内への大気の侵入は防がれる。
In FIG. 2, a pipe 223 is an exhaust pipe for eliminating the heat insulating space 219 of the dewar container.
After evacuation, it is sealed by welding or by installing a vacuum valve. The main body of the dewar container is made of stainless steel, which has poor thermal conductivity, and a metal with good thermal conductivity, such as copper, is used for the wafer holder 214 provided at the center of the interior. Thermocouples 216 and 213 are
These are used to detect the maximum liquid level of the injected liquid nitrogen and to detect the temperature of the top surface of the wafer holder, respectively. The leads of both thermocouples are led to the outside through a hook seal 208. Liquid nitrogen 220 is supplied into the dewar through a liquid nitrogen supply pipe 222, and evaporated gas is discharged to the outside from a pipe 205. A heater 215 wrapped around the outer circumference of the dewar inner container and a neck 2 provided on the top plate 210.
When taking out the wafer after the test, the heater 206 wrapped around the dewar heats the entire dewar to room temperature after taking out the liquid nitrogen inside the dewar and before removing the probe card 202. It is provided to prevent dew condensation. The activated carbon 221 in contact with the outside of the bottom plate of the inner container 217 of the dewar adsorbs gas remaining in the heat insulating space. In addition, before supplying liquid nitrogen to the dewar, the liquid nitrogen supply pipe 222 or the pipe 20 for releasing evaporated nitrogen gas is
It is necessary to introduce dry nitrogen gas into the dewar through 5 to replace the air inside with dry nitrogen.
After liquid nitrogen is injected, the liquid nitrogen supply pipe 222 and the pipe 205 for releasing evaporated nitrogen gas are connected with a highly elastic rubber tube with a small cut in the length direction of the side surface. Therefore, the evaporated nitrogen gas inside the dewar is gradually released into the atmosphere through the cuts against the elasticity of the rubber, and the inside of the dewar is always kept at a pressure slightly higher than atmospheric pressure, so air cannot enter the dewar. Prevented.

また本発明の他の実施例として、プローブカー
ドおよびデユワー容器の変位に際して両者間の気
密性を保つ手段を、第3図に示すように構成する
こともできる。即ち、第1図および第2図におい
て頚状部207に設けられているOーリング20
4を、ベローズ207aに設けることにより、O
ーリング204はベローズ207aの弾力により
プローブカード202の下面に押しつけられてい
る。
Further, as another embodiment of the present invention, the means for maintaining airtightness between the probe card and the dewar container when they are displaced may be constructed as shown in FIG. That is, the O-ring 20 provided on the neck portion 207 in FIGS. 1 and 2
4 on the bellows 207a, O
The ring 204 is pressed against the lower surface of the probe card 202 by the elasticity of the bellows 207a.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の構成を示し、第2図は
本発明実施例を構成するデユワー容器の詳細図で
ある。第3図は、本発明の他の実施例に用いる、
デユワー容器とプローブカードとの接触部の構造
を示す図である。 11……顕微鏡、12……カードホルダー、1
3……プローブカードの高さ調節ネジ、14……
回転テーブル、15……回転レバー、16……ス
ライドベツド、17,18……スライドベツド移
動調節ネジ、201……プローブカード透視窓、
202……プローブカード、204……Q−リン
グ、207……頚状部、207a……ベローズ、
211……探針、212……半導体ウエハー、2
14……半導体ウエハー保持台、217……デユ
ワー内側容器、218……デユワー外側容器、2
19……断熱真空空間、220……液体窒素。
FIG. 1 shows the structure of an embodiment of the present invention, and FIG. 2 is a detailed view of a dewar container constituting the embodiment of the present invention. FIG. 3 shows, for use in another embodiment of the present invention,
FIG. 3 is a diagram showing the structure of a contact portion between a dewar container and a probe card. 11...Microscope, 12...Card holder, 1
3... Probe card height adjustment screw, 14...
Rotary table, 15...Rotary lever, 16...Slide bed, 17, 18...Slide bed movement adjustment screw, 201...Probe card transparent window,
202... Probe card, 204... Q-ring, 207... Neck, 207a... Bellows,
211...Tip, 212...Semiconductor wafer, 2
14... Semiconductor wafer holding stand, 217... Dewar inner container, 218... Dewar outer container, 2
19...Insulated vacuum space, 220...Liquid nitrogen.

Claims (1)

【特許請求の範囲】[Claims] 1 試験すべき半導体ウエハーの保持台を内蔵
し、上記半導体ウエハーを冷却するための寒剤を
入れる断熱容器と、探針先端部を透視するための
透視窓の設けられたプローブカードと、上記断熱
容器を載せる断熱容器架台と、上記プローブカー
ドを保持するプローブカード保持手段と、上記プ
ローブカードの上記透視窓よりプローブカードの
探針先端部を観察するための顕微鏡とから成り、
上記断熱容器上部の開口部に、上記プローブカー
ドが所定の範囲にわたり上記開口部との間に気密
を保つて3次元的に密着変位し得る手段を設け、
上記断熱容器架台と上記プローブカード保持手段
の少なくとも一方に、互の相対的位置を変位させ
る手段を設けた、半導体ウエハー低温試験装置。
1. A heat insulating container containing a holding stand for the semiconductor wafer to be tested and containing a cryogen for cooling the semiconductor wafer, a probe card provided with a see-through window for seeing through the tip of the probe, and the heat insulating container. comprising an insulating container stand on which the probe card is mounted, a probe card holding means for holding the probe card, and a microscope for observing the tip of the probe of the probe card through the see-through window of the probe card,
Provided at the opening in the upper part of the heat insulating container is a means that allows the probe card to be displaced three-dimensionally in close contact with the opening while maintaining airtightness over a predetermined range;
A semiconductor wafer low temperature testing apparatus, wherein at least one of the heat insulating container pedestal and the probe card holding means is provided with means for displacing the relative positions thereof.
JP57129321A 1982-07-23 1982-07-23 Low temperature testing device for semiconductor wafer Granted JPS5919343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129321A JPS5919343A (en) 1982-07-23 1982-07-23 Low temperature testing device for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129321A JPS5919343A (en) 1982-07-23 1982-07-23 Low temperature testing device for semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5919343A JPS5919343A (en) 1984-01-31
JPS6236387B2 true JPS6236387B2 (en) 1987-08-06

Family

ID=15006685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129321A Granted JPS5919343A (en) 1982-07-23 1982-07-23 Low temperature testing device for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5919343A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
CN111811939B (en) * 2020-07-21 2022-08-02 上海交通大学 High-precision nanomechanical detection system in ultra-low temperature environment

Also Published As

Publication number Publication date
JPS5919343A (en) 1984-01-31

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