JPS6237838B2 - - Google Patents
Info
- Publication number
- JPS6237838B2 JPS6237838B2 JP1420280A JP1420280A JPS6237838B2 JP S6237838 B2 JPS6237838 B2 JP S6237838B2 JP 1420280 A JP1420280 A JP 1420280A JP 1420280 A JP1420280 A JP 1420280A JP S6237838 B2 JPS6237838 B2 JP S6237838B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mirror surface
- asp
- inga
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 30
- 239000013078 crystal Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000003776 cleavage reaction Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000007017 scission Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は半導体レーザの製造方法に関するもの
である。半導体レーザの構造は電流注入が、Ｐ，
ｎ両電極全面にわたつて行われるブロードコンタ
クト型が最も基本的であるが、実際には発振しき
い電流値を下げ、活性層で生じる発熱量を低くす
るため、及び、発振横モードを制御するため、
種々のストライプ構造が具現されている。最も典
型的なストライプ構造のものとしてSiO2ストラ
イプ型構造がある。その例を（InGa）（AsP）／
InPダブルヘテロレーザについて第１図に示す。
この図で１は（InGa）（AsP）活性層、２はＰ―
InP層、４はＰ電極、５はｎ電極、６はSiO2膜で
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor laser. The structure of a semiconductor laser is that current injection is P,
The most basic type is the broad contact type, which covers the entire surface of both n electrodes, but it is actually used to lower the oscillation threshold current value, lower the amount of heat generated in the active layer, and control the oscillation transverse mode. For,
Various striped structures have been implemented. The most typical stripe structure is the SiO 2 stripe structure. An example is (InGa) (AsP)/
Figure 1 shows an InP double hetero laser.
In this figure, 1 is an (InGa) (AsP) active layer, and 2 is a P-
InP layer, 4 is P electrode, 5 is N electrode, and 6 is SiO 2 film.
電流はSiO2の無いストライプ部分７を通して
流れ、活性層部１でキヤリア再結合による発光が
生じ、鏡面８，９で往復反射される。注入電流値
がある値を越えると、レーザ発振が生じ、レーザ
光が外部に放射される。鏡面は通学へき開により
作られており、へき開は（110）面について容易
に行いえるために成長は（110）面と直交する
（100）面上に行われる。従つて、図１の鏡面８，
９は（100）面になる。しかしながら、へき開に
よつて鏡面を作製する場合には、複数個の半導体
レーザが一体化されたものを得る場合には、共通
のへき開鏡面を持つ複数個の並置された半導体レ
ーザしかできずに共振器が縦に並んだ、あるいは
縦横に並んだ多数の半導体レーザを一つのウエハ
ー上に作ることはできない。 The current flows through the stripe portion 7 without SiO 2 , and light emission occurs in the active layer portion 1 due to carrier recombination, which is reflected back and forth by the mirror surfaces 8 and 9. When the injection current value exceeds a certain value, laser oscillation occurs and laser light is emitted to the outside. The mirror surface is created by cleavage, and since cleavage can be easily performed on the (110) plane, growth is performed on the (100) plane, which is perpendicular to the (110) plane. Therefore, the mirror surface 8 in FIG.
9 becomes a (100) side. However, when creating a mirror surface by cleavage, if multiple semiconductor lasers are integrated, only a plurality of semiconductor lasers juxtaposed with a common cleavage mirror surface will resonate. It is not possible to fabricate a large number of semiconductor lasers with devices arranged vertically or in rows and columns on a single wafer.
また、InGaAsP／InP半導体レーザはInGaAsP
に転位が発生し難いという理由があつて
（AlGa）As半導体レーザで見られたような活性
層を貫く転位に原因する活性層内中での通電時の
転位の伸長により出力が減少する劣化は生じにく
いが、鏡面が動作中に酸化されて劣化してくるた
めに光出力が減少してくる傾向があり、特に出力
が高い場合には、この傾向は著しくなる。この劣
化原因を除去するためには鏡面を外気より保護す
る必要がある。この鏡面保護の具体的手段として
は例えば、SiO2，Al2O3のように半導体レーザの
発振波長に対して透明な絶縁膜を鏡面に付ける方
法があるが、この方法は外気の侵入は防ぐことは
できても、バンドが結晶表面で曲ることによる光
の吸収に基く、鏡面劣化を抑制することはできな
いので、鏡面保護法としては完全ではない。完全
な鏡面保護を行うためには、（InGa）（AsP）活
性層よりもバンド間隔の大きい物質で（InGa）
（AsP）活性層表面を覆つて、鏡面のバンドの曲
りをなくしてレーザ光自身による鏡面でのキヤリ
アの励起をなくすことが必要である。こうした
InP，（InGa）（AsP）による鏡面保護を行う場
合、へき開による方法では電極まで形成したウエ
ハアーをバー状にへき開したものについて行わな
ければならないので生産的ではない。これに対し
て化学エツチングによつて鏡面を形成したもの
は、ウエハー処理が可能であるので、大量生産に
向いている。 Also, InGaAsP/InP semiconductor laser is InGaAsP
The reason is that dislocations are difficult to generate in (AlGa)As semiconductor lasers, and the deterioration in which the output decreases due to the elongation of dislocations during current conduction in the active layer caused by dislocations penetrating the active layer, as seen in (AlGa)As semiconductor lasers, is Although this is unlikely to occur, the mirror surface is oxidized and deteriorated during operation, which tends to reduce the optical output, and this tendency becomes particularly pronounced when the output is high. In order to eliminate this cause of deterioration, it is necessary to protect the mirror surface from the outside air. A specific method for protecting this mirror surface is, for example, attaching an insulating film such as SiO 2 or Al 2 O 3 that is transparent to the oscillation wavelength of the semiconductor laser to the mirror surface, but this method prevents outside air from entering. However, it is not perfect as a mirror protection method because it cannot suppress the deterioration of the mirror surface due to light absorption caused by the bending of the band on the crystal surface. In order to achieve complete mirror protection, it is necessary to use a material with a larger band spacing than the (InGa) (AsP) active layer.
(AsP) It is necessary to cover the active layer surface to eliminate the bending of the band on the mirror surface and eliminate the excitation of carriers on the mirror surface by the laser beam itself. These
When performing mirror protection using InP, (InGa) (AsP), the cleavage method is not productive because it must be performed on a wafer with electrodes formed thereon, which is then cleaved into bar shapes. On the other hand, a mirror surface formed by chemical etching is suitable for mass production because wafer processing is possible.
しかしながら、前記鏡面保護層は鏡面保護層自
身の機械的損傷、動作中の劣化を考慮すると、あ
る程度厚くする必要がある。また、結晶成長時の
被成長面の熱劣化を抑えるため結晶成長温度は極
力低くする必要がある。結晶成長温度を下げると
厚膜成長が困難になるため、従来、知られた方法
によつては、効果のある鏡面保護膜を形成するこ
とは困難である。本発明は上述した如き欠点のな
い鏡面保護膜を鏡面につけた半導体レーザを作製
する方法を提供するものである。本発明の特徴は
InP（100）面基板上に活性層を導波路層で挾み
こんだ多層構造の半導体層を形成し、この半導体
層を化学エツチして鏡面を形成する際にエツチン
グ速度がInPに比べて（InGa）（AsP）の方が速
いエツチング液を用いて（InGa）（AsP）活性層
鏡面とInP鏡面との間に段差をつけ、狭い溝での
（InGa）（AsP）の結晶成長速度が平担な面上で
の成長速度に比べて格段に速いことを利用して厚
い（InGa）（AsP）鏡面保護膜を低温で前記鏡面
上に形成することにある。 However, the specular protective layer needs to be thick to some extent in consideration of mechanical damage and deterioration of the specular protective layer itself during operation. Furthermore, in order to suppress thermal deterioration of the growth surface during crystal growth, the crystal growth temperature must be kept as low as possible. Since thick film growth becomes difficult when the crystal growth temperature is lowered, it is difficult to form an effective mirror protective film using conventionally known methods. The present invention provides a method for manufacturing a semiconductor laser having a mirror protective film on a mirror surface, which is free from the above-mentioned drawbacks. The characteristics of the present invention are
A multilayered semiconductor layer with an active layer sandwiched between waveguide layers is formed on an InP (100) plane substrate, and when this semiconductor layer is chemically etched to form a mirror surface, the etching speed is lower than that of InP (InGa ) (AsP) uses a faster etching solution to create a step between the mirror surface of the (InGa) (AsP) active layer and the mirror surface of InP. The purpose is to form a thick (InGa) (AsP) mirror protective film on the mirror surface at a low temperature by taking advantage of the fact that the growth rate is much faster than that on the mirror surface.
以下、本発明を実施例に基ずいて具体的に説明
する。第２図は本発明の一つの実施例の一工程を
示す図である。InP（100）面基板１０上にｎ―
LnP１１、（InGa）（AsP）活性層１２、Ｐ―InP
層１３を順次成長させた結晶上にSiO2１４をス
トライプの一辺が〔100〕方向にくるようにマス
キングする。 Hereinafter, the present invention will be specifically explained based on Examples. FIG. 2 is a diagram showing one process of an embodiment of the present invention. n- on the InP (100) plane substrate 10
LnP11, (InGa) (AsP) active layer 12, P-InP
SiO 2 14 is masked on the crystal on which the layers 13 have been grown in sequence so that one side of the stripe is in the [100] direction.
次にその開口部１５から半導体層のエツチング
を行なう。エツチング液としてはH2SO4，
H2O2，H2Oの混合液を使用する。この場合は結
晶方位によつてエツチング速度が異なるためマス
クの方向によつてエツチング断面と（100）面と
のなす角度が異なつてくる。第２図の如くマスク
の方向を〔100〕方向にした場合にはエツチング
面は（010）面となり、従つて、エツチング面は
（100）面と直交することになる。従つてエツチン
グを第３図に示したように（InGa）（AsP）活性
層１２の下まで行えば、エツチング面１６（第３
図参照）はレーザ鏡面として使用できることにな
る。 Next, the semiconductor layer is etched from the opening 15. As an etching solution, H 2 SO 4 ,
A mixture of H 2 O 2 and H 2 O is used. In this case, since the etching rate varies depending on the crystal orientation, the angle between the etched cross section and the (100) plane varies depending on the direction of the mask. If the direction of the mask is set to the [100] direction as shown in FIG. 2, the etched plane will be the (010) plane, and therefore the etched plane will be perpendicular to the (100) plane. Therefore, if etching is performed to the bottom of the (InGa) (AsP) active layer 12 as shown in FIG.
(see figure) can be used as a laser mirror surface.
第３図は第２図のＡ−Ｂ線（〔001〕方向）に沿
つての結晶の断面を示すものである。第３図はエ
ツチングをInP基板１０に致るまで行つた場合の
例である。この場合（InGa）（AsP）はInPに比
べて５〜６倍速い速度でエツチングされるため、
（InGa）（AsP）活性層表面１６はInP層表面１７
よりも奥に引つ込んだ形になり、鏡面には段差が
つく。エツチング面１６はｐ―ｎ接合面とは直交
しており、レーザ共振器を構成する。 FIG. 3 shows a cross section of the crystal along line AB ([001] direction) in FIG. 2. FIG. FIG. 3 shows an example in which etching is performed until the InP substrate 10 is reached. In this case, (InGa) (AsP) is etched 5 to 6 times faster than InP, so
(InGa) (AsP) active layer surface 16 is InP layer surface 17
It has a shape that is recessed deeper than before, and there are steps on the mirror surface. The etched surface 16 is perpendicular to the pn junction plane and constitutes a laser resonator.
次にレーザ鏡面１６を保護するために第４図の
ように活性層よりバンド間隔の大きい（InGa）
（AsP）層１８を鏡面１６上に結晶成長させる。 Next, in order to protect the laser mirror surface 16, as shown in FIG.
(AsP) layer 18 is crystal grown on mirror surface 16.
この場合、Ｐ―InP層１３上には、SiO2マスク
１４があり、エツチングによつて結晶面が、マス
ク面より後退するためにSiO2１４のひさしがＰ
―InP１３上にかかつている形になつている。従
つて、鏡面保護用結晶膜１８がSiO2膜１４上に
成長することはないため、結晶膜１８は鏡面上の
みに付くことになる。（InGa）（AsP）の成長は
凹凸部を埋める形で行われるので、溝部１９を埋
め込んだ（InGa）（AsP）層１８の表面は平担に
なる。かつ、溝部１９での（InGa）（AsP）層の
成長速度は極めて速いため、鏡面１６を熱劣化さ
せることのない低温で十分溝を埋めることが可能
である。 In this case, there is a SiO 2 mask 14 on the P-InP layer 13, and since the crystal plane recedes from the mask surface due to etching, the eaves of the SiO 2 14 are
-It is shaped like it hangs over InP13. Therefore, since the crystal film 18 for protecting the mirror surface does not grow on the SiO 2 film 14, the crystal film 18 is attached only on the mirror surface. Since the growth of (InGa) (AsP) is performed in such a way as to fill in the uneven portions, the surface of the (InGa) (AsP) layer 18 filling the groove portions 19 becomes flat. In addition, since the growth rate of the (InGa) (AsP) layer in the groove portion 19 is extremely fast, it is possible to sufficiently fill the groove at a low temperature without thermally deteriorating the mirror surface 16.
次に、かくして作製された結晶に電流注入のた
めの不純物拡散及び電極をつける。第２図のＡ―
Ｂ線で示したような〔001〕方向に沿つた電流注
入領域を通常のマスキング方法によつて、Zm、
あるいはCdの不純物拡散によつて設ける。次に
Ｐ側電極、ｎ側電極を形成することによつて、半
導体レーザは完成する。 Next, impurity diffusion and electrodes for current injection are attached to the thus prepared crystal. A in Figure 2
Zm,
Alternatively, it is provided by impurity diffusion of Cd. Next, the semiconductor laser is completed by forming a P-side electrode and an n-side electrode.
かくして形成された半導体レーザ２０，２１
は、活性層１２よりも、バンド間隔の大きい
（InGa）（AsP）層１８が、鏡面１６に厚くつい
ているため、高出力動作時においても劣化するこ
とがない。 Semiconductor lasers 20 and 21 thus formed
Since the (InGa) (AsP) layer 18, which has a larger band spacing than the active layer 12, is thickly attached to the mirror surface 16, it does not deteriorate even during high-power operation.
また、半導体レーザ２０，２１は溝２２によつ
て互いに独立になつているので、それぞれに電極
を設けて電流を流せば、単独または同時に発振さ
せることができる。勿論、一つのチツプを用いて
多数個の半導体レーザを作ることもできる。 Furthermore, since the semiconductor lasers 20 and 21 are made independent of each other by the groove 22, by providing electrodes to each and passing a current through them, they can be caused to oscillate individually or simultaneously. Of course, multiple semiconductor lasers can be made using one chip.
上述した実施例は鏡面のみを（InGa）（AsP）
で覆つた例について述べたが、エツチングを共振
器の横方向についても同時に行ない、反射面を
（InGa）（AsP）層１８で覆う際に、同時に共振
器の横方向２３も覆えば、第５図に示したような
埋め込み型（InGa）（AsP）／InPレーザが出
来、横モード制御も行なうことができる。 In the above embodiment, only the mirror surface is made of (InGa) (AsP).
Although we have described the example in which the resonator is covered with a layer of (InGa) (AsP), etching is also performed in the lateral direction of the resonator at the same time. An embedded type (InGa) (AsP)/InP laser as shown in the figure can be created, and transverse mode control can also be performed.
以上、説明したように本発明によれば、半導体
レーザ鏡面に低温で充分厚く機械的強度の大きい
鏡面保護膜が形成することができ、その結果、信
頼性の大なる半導体レーザが得られる。 As described above, according to the present invention, a sufficiently thick mirror protective film with high mechanical strength can be formed on the mirror surface of a semiconductor laser at a low temperature, and as a result, a highly reliable semiconductor laser can be obtained.
第１図は典型的な半導体レーザの斜視図。第２
〜５図は本発明の実施例で一工程を示す概略図で
ある。１，１２は（InGa）（AsP）活性層、３，
１１はｎ―InP層、２，１３はＰ―InP層、１０
はｎ―InP基板４，５は電極、６はSiO2膜、７は
電流注入領域、８，９は鏡面、１４はSiO2マス
ク、１５はエツチング部分、１６，１７はエツチ
ング面、１８は（InGa）（AsP）埋め込み層、１
９はエツチングによる溝、２０，２１はレーザ素
子、２２は溝部、２３は共振器の横方向を示す。
FIG. 1 is a perspective view of a typical semiconductor laser. Second
Figures 5 to 5 are schematic diagrams showing one step in an embodiment of the present invention. 1 and 12 are (InGa) (AsP) active layers, 3,
11 is an n-InP layer, 2 and 13 are P-InP layers, 10
n-InP substrates 4 and 5 are electrodes, 6 is a SiO 2 film, 7 is a current injection region, 8 and 9 are mirror surfaces, 14 is a SiO 2 mask, 15 is an etching part, 16 and 17 are etching surfaces, and 18 is ( InGa) (AsP) buried layer, 1
9 is a groove formed by etching, 20 and 21 are laser elements, 22 is a groove portion, and 23 is the lateral direction of the resonator.
Claims (1)
（InGa）（AsP）層を導波路層となるInP層で挾み
込んで成る（InGa）（AsP）／InPヘテロ接合多
層構造の半導体層を形成する工程と、前記多層構
造で成る半導体層をエツチングして共振器方向が
〔100〕方向と一致し、かつ、前記活性層と導波路
層との間に段差が生じるように鏡面を形成する工
程と、各層間で段差が生じている前記鏡面に前記
活性層よりもバンド間隔の大きい（InGa）
（AsP）層を表面が平担で、かつ、InP基板の
（100）面に直交するように形成する工程とを含む
ことを特徴とする半導体レーザの製造方法。[Claims] 1. An (InGa) (AsP)/InP heterostructure consisting of an (InGa) (AsP) layer serving as an active layer sandwiched between an InP layer serving as a waveguide layer on an InP (100) plane substrate. A step of forming a semiconductor layer having a junction multilayer structure, and etching the semiconductor layer having the multilayer structure so that the resonator direction coincides with the [100] direction and there is no step between the active layer and the waveguide layer. A step of forming a mirror surface so that the layer is formed, and a process of forming a mirror surface with a step difference between each layer, the mirror surface having a band spacing larger than that of the active layer (InGa).
A method for manufacturing a semiconductor laser, comprising the step of forming an (AsP) layer with a flat surface and perpendicular to the (100) plane of an InP substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1420280A JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1420280A JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56111284A JPS56111284A (en) | 1981-09-02 |
| JPS6237838B2 true JPS6237838B2 (en) | 1987-08-14 |
Family
ID=11854519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1420280A Granted JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56111284A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461081A (en) * | 1987-09-01 | 1989-03-08 | Japan Res Dev Corp | Distributed-feedback type semiconductor laser and manufacture thereof |
| US5082799A (en) * | 1990-09-14 | 1992-01-21 | Gte Laboratories Incorporated | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers |
| US5222091A (en) * | 1990-09-14 | 1993-06-22 | Gte Laboratories Incorporated | Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor |
-
1980
- 1980-02-07 JP JP1420280A patent/JPS56111284A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56111284A (en) | 1981-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20030210721A1 (en) | Semiconductor optical device | |
| JPH0834337B2 (en) | Method for manufacturing semiconductor laser device | |
| US4972238A (en) | Semiconductor laser device | |
| JP4583058B2 (en) | Semiconductor laser element | |
| US4644551A (en) | Buried-type semiconductor laser | |
| EP0270170B1 (en) | Semiconductor laser and method of manufacturing same | |
| JPS6237838B2 (en) | ||
| US4759025A (en) | Window structure semiconductor laser | |
| US5608750A (en) | Semiconductor laser device and a method for the manufacture thereof | |
| JP3918258B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| JP2624881B2 (en) | Semiconductor laser device and method of manufacturing the same | |
| JPH0648742B2 (en) | Method for manufacturing semiconductor laser | |
| JP2784298B2 (en) | Super luminescent diode and method for producing the same | |
| JP3505913B2 (en) | Method for manufacturing semiconductor light emitting device | |
| JPS59197182A (en) | Distribution feedback type semiconductor laser | |
| JP2769409B2 (en) | Super luminescent diode and method for producing the same | |
| JP2000138417A (en) | Multi-beam laser diode | |
| JPH037153B2 (en) | ||
| JPH02119285A (en) | Manufacture of semiconductor laser | |
| JPS622717B2 (en) | ||
| KR970004499B1 (en) | A method for manufacture of semiconductor laser | |
| JPS63129683A (en) | Manufacture of buried semiconductor laser | |
| JPS59130492A (en) | Semiconductor laser device and its manufacturing method | |
| JP2000216472A (en) | Method for manufacturing semiconductor laser and semiconductor laser device | |
| JPS58216492A (en) | Distributed bragg reflection type laser |