JPS6239554B2 - - Google Patents
Info
- Publication number
- JPS6239554B2 JPS6239554B2 JP2004580A JP2004580A JPS6239554B2 JP S6239554 B2 JPS6239554 B2 JP S6239554B2 JP 2004580 A JP2004580 A JP 2004580A JP 2004580 A JP2004580 A JP 2004580A JP S6239554 B2 JPS6239554 B2 JP S6239554B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- disk
- discharge
- rare gas
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 34
- 229910002804 graphite Inorganic materials 0.000 claims description 34
- 239000010439 graphite Substances 0.000 claims description 34
- 150000002500 ions Chemical class 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 17
- 230000010355 oscillation Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- -1 argon ion Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/032—Constructional details of gas laser discharge tubes for confinement of the discharge, e.g. by special features of the discharge constricting tube
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Description
【発明の詳細な説明】
この発明は、グラフアイト板から成るプラズマ
細管を備えた希ガスイオンレーザ管に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a rare gas ion laser tube with a plasma capillary made of graphite plates.
希ガスイオンレーザ管は、イオン準位でのレー
ザ遷移を利用するためプラズマ細管に10Aから
50Aにおよぶ放電電流を通じる。プラズマ細管は
レーザ利得を得るのに十分な電流密度を達成する
ため、通常2〜5mmの内径とするので電圧降下が
大きく、希ガスイオンレーザ管の放電電力の大部
分はプラズマ細管で消費される。従つてプラズマ
細管は数KWから数10KWの発生熱に耐える材料
と構造を用いる必要がある。プラズマ細管を構成
する1つの方法は、1本または数本を縦続接続し
たベリリア磁器のような良好な熱伝導特性を持つ
絶縁体の管を用い、これを真空外囲器とすると共
にその外側を直接水冷するものである。しかし、
ベリリア磁器細管は材料の入手が困難で、レーザ
管の構造が複雑になる欠点がある。 The rare gas ion laser tube utilizes laser transition at the ion level, so the plasma capillary can be heated from 10A to
Passes a discharge current of up to 50A. In order to achieve sufficient current density to obtain laser gain, the plasma capillary usually has an inner diameter of 2 to 5 mm, resulting in a large voltage drop, and most of the discharge power of a rare gas ion laser tube is consumed in the plasma capillary. . Therefore, it is necessary to use materials and structures for the plasma capillary that can withstand the generated heat of several kilowatts to several tens of kilowatts. One method of constructing a plasma capillary is to use one or several cascaded tubes of an insulator with good thermal conductivity, such as beryllia porcelain, to form a vacuum envelope and an outer surface. It is directly water cooled. but,
Beryllia porcelain thin tubes have the disadvantage that it is difficult to obtain materials and the structure of the laser tube becomes complicated.
別な方法は、グラフアイトなどの耐熱性と熱放
射性のすぐれたデイスク状導電材料を絶縁物を介
して複数個接続してデイスク列とし、このデイス
ク列を冷却水におおわれた石英などの耐熱絶縁容
器内に収納して真空気密とし、デイスク中央部に
設けた小孔を通して放電を行い、放電により発生
する熱をデイスクから放射によつて放散するもの
である。しかるにグラフアイトデスクを用いる方
法は材料の入手とレーザ管の構成が容易である
が、大電流放電によるイオン衝撃と、グラフアイ
ト自身が機械的に脆弱のためグラフアイトが微粉
化しやすく微粉化したグラフアイトが拡散や大電
流放電により生じる希ガス流によつてレーザ管の
末端に運ばれブルースタ窓の内面に附着し、レー
ザ発振に損失を与え、発振レーザ出力の低下や発
振モードの乱れを生じ、遂にはレーザ発振が停止
して寿命となるという問題や、ブルースタ窓まで
到達しない微粉も細管内に堆積してレーザ発振領
域を狭めてレーザ出力を低下させたりデイスク間
に堆積してデイスク間の絶縁不良を起し遂には放
電不能となるなどの欠点がある。 Another method is to connect multiple disk-shaped conductive materials with excellent heat resistance and heat radiation properties such as graphite through an insulator to form a disk row, and then cover this disk row with a heat-resistant insulator such as quartz covered with cooling water. The disk is housed in a vacuum-tight container, discharges through a small hole provided in the center of the disk, and the heat generated by the discharge is radiated from the disk. However, the method using a graphite desk is easy to obtain materials and configure the laser tube, but due to the ion bombardment caused by large current discharge and the mechanical weakness of graphite itself, graphite tends to become finely powdered. The particles are carried to the end of the laser tube by the rare gas flow generated by diffusion and large current discharge and adhere to the inner surface of the Brewster window, causing loss in laser oscillation, causing a decrease in the oscillation laser output and disturbance of the oscillation mode. The problem is that the laser oscillation eventually stops and the end of its life is reached, and that fine powder that does not reach the Brewster window also accumulates in the tube, narrowing the laser oscillation area and reducing the laser output, or that it accumulates between the disks and causes damage between the disks. There are drawbacks such as poor insulation and eventually inability to discharge.
本発明の目的は大電流放電に耐え、微粉を生じ
にくいグラフアイトデイスクプラズマ細管を有す
る長寿命の希ガスイオンレーザ管を提供すること
にある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a long-life rare gas ion laser tube having a graphite disk plasma capillary that can withstand large current discharge and is less likely to generate fine powder.
すなわち本発明は、レーザ光を発生する放電用
中心孔と、その周辺に設けられたガス帰還用の小
孔を有する複数のグラフアイト板を一定間隔に配
置して成るプラズマ細管を備え、グラフアイト板
の放電用小孔の内面を炭化珪素でおおい、グラフ
アイトの微粉化を最小限におさえることによつて
レーザ管の長寿命化を図つたものである。なおま
た、炭化珪素はグラフアイト板の外周表面を除く
表面をおおうようにして設けてもよい。 That is, the present invention includes a plasma capillary made of a plurality of graphite plates arranged at regular intervals, each having a central discharge hole for generating laser light and small holes for gas return provided around the central hole, and The inner surface of the discharge hole in the plate is covered with silicon carbide to minimize the pulverization of graphite, thereby extending the life of the laser tube. Furthermore, silicon carbide may be provided so as to cover the surface of the graphite plate except for the outer peripheral surface.
以下図面を参照して本発明を説明する。 The present invention will be explained below with reference to the drawings.
従来のグラフアイトデイスクプラズマ細管を有
する希ガスイオンレーザ管は、第1図に示すよう
に、カソード1と、プラズマ細管を構成するグラ
フアイトから成る複数のデイスクと、アノード3
と、一対のブルースタ窓4,4′と透明外囲器5
とから成る。外囲器5の内部にはレーザ媒質とし
てAr,Krなどの希ガス6が封入され、デイスク
の中心孔を通してレーザ光軸7が設定される。高
純度グラフアイトから成るデイスク2は、第2図
に示すように、デイスク状を成し、中心に放電径
路を構成する小孔8があけられ、その周辺にガス
帰還用の複数の小孔9が設けられている。小孔9
は、この部分で放電径路が構成されないように、
各々は小孔8よりも直径が小さくコンダクタンス
を小さくしてある。デイスク2は、図に示されな
い電気絶縁体で一定間隔離され、多数が並べられ
てプラズマ細管を構成する。 As shown in FIG. 1, a conventional rare gas ion laser tube having a graphite disk plasma capillary includes a cathode 1, a plurality of graphite disks constituting the plasma capillary, and an anode 3.
, a pair of Brewster windows 4, 4' and a transparent envelope 5
It consists of A rare gas 6 such as Ar or Kr is sealed inside the envelope 5 as a laser medium, and a laser optical axis 7 is set through the center hole of the disk. As shown in FIG. 2, the disk 2 made of high-purity graphite has a disk shape with a small hole 8 forming a discharge path in the center and a plurality of small holes 9 for gas return around the center. is provided. Small hole 9
In order to prevent the discharge path from being formed in this part,
Each has a smaller diameter than the small hole 8 and has a smaller conductance. The disks 2 are isolated for a certain period of time by an electric insulator (not shown), and a large number of disks 2 are lined up to form a plasma capillary.
放電によつて生じる発熱によりデイスク2は高
温となり、この発生熱はデイスク2の外周表面1
0から放射によつて透明外囲器5を通してその周
辺に設けられる図に示されていない冷却水中に放
散される。デイスク2の温度T(〓)は主として
デイスクの外周表面10の熱放射率εによつて、
次のようにシユテフアン・ボルツマンの法則で定
まる。 The heat generated by the discharge causes the disk 2 to reach a high temperature, and this generated heat is transferred to the outer peripheral surface 1 of the disk 2.
0 is radiated through the transparent envelope 5 into cooling water (not shown) provided around the transparent envelope 5. The temperature T(〓) of the disk 2 is mainly determined by the thermal emissivity ε of the outer peripheral surface 10 of the disk.
It is determined by the Shuttejuan-Boltzmann law as follows.
S=εσT4
ただし、Sはデイスクからの単位時間、単位外
周表面積あたりの放射エネルギー、σはシユテフ
アン・ボルツマン定数である。通常のアルゴンイ
オンレーザではTは約1000℃に設定される。しか
しグラフアイト材料は硬度が1〜2で機械的にも
ろくくずれやすい性質があり大電流放電によるイ
オン衝撃と高温動作により特にデイスク2の放電
領域8の内壁が長時間動作によりくずれ、グラフ
アイトが微粉化する。この結果、微粉が放電用小
穴8の内壁に堆積し、放電用小穴8が次第に狭ま
り、レーザの発振モード体積が減少し、レーザ出
力が低下する。 S=εσT 4where , S is the radiant energy per unit time and unit peripheral surface area from the disk, and σ is the Schutefan-Boltzmann constant. In a typical argon ion laser, T is set at about 1000°C. However, graphite material has a hardness of 1 to 2 and is mechanically brittle and easily crumbles. Due to ion bombardment caused by large current discharge and high temperature operation, the inner wall of the discharge area 8 of disk 2 in particular collapses due to long-term operation, and graphite becomes fine powder. become As a result, fine powder accumulates on the inner wall of the small discharge hole 8, and the small discharge hole 8 gradually narrows, the oscillation mode volume of the laser decreases, and the laser output decreases.
また放電用小穴8から出た微粉はグラフアイト
デイスク間に蓄積され、デイスク間を絶縁してい
る絶縁体に附着して絶縁を劣化させ、遂には放電
不能となる。 Furthermore, the fine powder coming out of the small discharge holes 8 accumulates between the graphite disks and adheres to the insulator that insulates the disks, deteriorating the insulation and eventually making it impossible to discharge.
さらに微粉化したグラフアイトの一部は放電時
のアルゴンガス流によつてレーザ管内を移動して
レーザ発振出力を低下させたり、発振モードを悪
化する。グラフアイトデイスク希ガスイオンレー
ザはこのようなグラフアイトの微粉化により、寿
命となることが多かつた。 Further, a part of the finely powdered graphite moves within the laser tube due to the argon gas flow during discharge, reducing the laser oscillation output or deteriorating the oscillation mode. Graphite disk rare gas ion lasers often reached the end of their service life due to such pulverization of graphite.
第3図は本発明の一実施例に基づく、希ガスイ
オンレーザ管のプラズマ細管用グラフアイトデイ
スクの断面構造である。本発明に基づくデイスク
2は、従来と同様の高純度グラフアイト11から
成り、放電用小孔内面が炭化珪素12によりおお
われている。炭化珪素は高耐熱(1500℃まで使用
可能)高硬度(硬度9.5)の材料として従来から
知られ、グラフアイトに対し、デボジツト法また
はコンバージヨン法によつて数10μmから数mmま
での薄膜を特定の表面に形成することができる。 FIG. 3 is a cross-sectional structure of a graphite disk for a plasma capillary of a rare gas ion laser tube according to an embodiment of the present invention. The disk 2 based on the present invention is made of high-purity graphite 11 similar to the conventional one, and the inner surface of the small discharge hole is covered with silicon carbide 12. Silicon carbide has long been known as a material with high heat resistance (can be used up to 1500℃) and high hardness (hardness 9.5), and compared to graphite, thin films ranging from several tens of micrometers to several mm can be produced using the deposit method or conversion method. can be formed on the surface of
この構造のデイスクをプラズマ細管として希ガ
スイオンレーザ管に用いると、放電は中心の小孔
8を通して行なわれ、デイスク全体の温度は上昇
するが、放電用小孔内面が炭化珪素でおおわれて
いるため、微粉の発生は最低におさえられる。ま
たデイスクからの放熱は主として外周表面13に
より行なわれるが、この部分は炭化珪素膜が存在
せず、グラフアイトそのものが露出しているので
問題はない。炭化珪素の熱放射率は約0.75であ
り、グラフアイトの熱放射率0.9に比較して、同
一デイスク温度にするには、全面炭化珪素にした
場合には20%だけ外周面積、すなわちデイスク直
径を増大する必要があるが放電用小孔内面以外の
グラフアイトを残すことにより、熱放射の低下を
防ぎ、デイスクの温度上昇を同一寸法の従来グラ
フアイトデイスクとほぼ同一にすることができ
る。 When a disk with this structure is used as a plasma capillary in a rare gas ion laser tube, discharge occurs through the small hole 8 in the center, and the temperature of the entire disk rises, but because the inner surface of the discharge hole is covered with silicon carbide. , the generation of fine powder is kept to a minimum. Further, heat is radiated from the disk mainly through the outer circumferential surface 13, but there is no problem since there is no silicon carbide film in this area and the graphite itself is exposed. The thermal emissivity of silicon carbide is approximately 0.75, and compared to graphite's thermal emissivity of 0.9, in order to achieve the same disk temperature, if the entire surface is made of silicon carbide, the outer peripheral area, that is, the disk diameter, must be reduced by 20%. By leaving graphite in areas other than the inner surface of the small discharge holes, it is possible to prevent a decrease in heat radiation and make the temperature rise of the disk almost the same as that of a conventional graphite disk of the same size.
以上の実施例では炭化珪素をグラフアイト板の
放電用小穴の内面にのみ設けた場合を示したが、
グラフアイト板の外周表面10を除く他の全表面
に設けてもよい。 In the above example, silicon carbide was provided only on the inner surface of the discharge hole of the graphite plate, but
It may be provided on the entire surface of the graphite plate except for the outer peripheral surface 10.
従つて本発明によれば、希ガスイオンレーザ管
の構造としては全く従来通りで、微粉の発生の少
い長寿命の希ガスイオンレーザ管を得ることがで
きる。 Therefore, according to the present invention, it is possible to obtain a rare gas ion laser tube that has a completely conventional structure, generates less fine powder, and has a long life.
第1図はグラフアイトデイスクを用いた希ガス
イオンレーザ管を示す断面図、第2図は従来のグ
ラフアイトデイスクの構造を示す断面図、第3図
は本発明の一実施例を示すグラフアイトデイスク
の構造を示す断面図である。
1……カソード、2……グラフアイトデイス
ク、3……アノード、4,4′……ブルースタ
窓、5……外囲器、6……希ガス、7……レーザ
光軸、8……放電用小孔、9……ガス帰還用小
孔、10……外周表面、11……グラフアイト、
12……炭化珪素膜。
Fig. 1 is a cross-sectional view showing a rare gas ion laser tube using a graphite disk, Fig. 2 is a cross-sectional view showing the structure of a conventional graphite disk, and Fig. 3 is a graphite disk showing an embodiment of the present invention. FIG. 3 is a cross-sectional view showing the structure of the disk. 1... Cathode, 2... Graphite disk, 3... Anode, 4, 4'... Brewster window, 5... Envelope, 6... Rare gas, 7... Laser optical axis, 8... Small hole for discharge, 9... Small hole for gas return, 10... Outer peripheral surface, 11... Graphite,
12...Silicon carbide film.
Claims (1)
に設けられたガス帰還用の小孔を有する複数のグ
ラフアイト板を一定間隔に配置して成るプラズマ
細管を備え、前記グラフアイト板の外周表面を除
く少なくとも放電用中心孔内面が炭化珪素でおお
われたことを特徴とする希ガスイオンレーザ管。 2 グラフアイト板の外周表面を除く他の全表面
が炭化珪素でおおわれたことを特徴とする特許請
求の範囲第1項記載の希ガスイオンレーザ管。[Scope of Claims] 1. A plasma tube comprising a plurality of graphite plates arranged at regular intervals, each having a central hole for discharge that generates laser light and small holes for gas return provided around the center hole, A rare gas ion laser tube characterized in that at least the inner surface of a central discharge hole, excluding the outer peripheral surface of a graphite plate, is covered with silicon carbide. 2. The rare gas ion laser tube according to claim 1, wherein the entire surface of the graphite plate other than the outer peripheral surface is covered with silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004580A JPS56116690A (en) | 1980-02-20 | 1980-02-20 | Rare gas ion laser tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004580A JPS56116690A (en) | 1980-02-20 | 1980-02-20 | Rare gas ion laser tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56116690A JPS56116690A (en) | 1981-09-12 |
| JPS6239554B2 true JPS6239554B2 (en) | 1987-08-24 |
Family
ID=12016081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004580A Granted JPS56116690A (en) | 1980-02-20 | 1980-02-20 | Rare gas ion laser tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116690A (en) |
-
1980
- 1980-02-20 JP JP2004580A patent/JPS56116690A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116690A (en) | 1981-09-12 |
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