JPS6239560B2 - - Google Patents
Info
- Publication number
- JPS6239560B2 JPS6239560B2 JP6547279A JP6547279A JPS6239560B2 JP S6239560 B2 JPS6239560 B2 JP S6239560B2 JP 6547279 A JP6547279 A JP 6547279A JP 6547279 A JP6547279 A JP 6547279A JP S6239560 B2 JPS6239560 B2 JP S6239560B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- insulating layer
- thin film
- pattern
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】
本発明はコンピユータ等電子機器に使用され
る、LSI実装用の高密度多層配線基板の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a high-density multilayer wiring board for LSI mounting used in electronic devices such as computers.
従来この種の多層配線基板の製造方法では、厚
膜法あるいは薄膜法により、平滑な基板もしくは
絶縁層の表面に平面的にパターンを形成し多層化
している。このため、パターン実装密度はクロス
トークあるいはマイグレーシヨン等電気的に、又
面積的に見て、パターン線巾やパターン間隔(ピ
ツチ)に関して自ずと制限される。これはパター
ンの高密度集積化の立場からして非常に好ましく
ないという欠点があつた。 Conventionally, in the manufacturing method of this type of multilayer wiring board, a pattern is formed two-dimensionally on the surface of a smooth substrate or an insulating layer by a thick film method or a thin film method to form multiple layers. For this reason, the pattern packaging density is naturally limited in terms of pattern line width and pattern spacing (pitch) from an electrical standpoint such as crosstalk or migration, and from an area standpoint. This has the disadvantage that it is extremely undesirable from the standpoint of high-density integration of patterns.
本発明の目的は、基板もしくは絶縁層の表面に
予め定められた寸法に絶縁層の溝を形成して、薄
膜法によりこの溝の側面に配線パターンを形成す
る。すなわち立体的にパターンを形成し多層化す
ることにより、上述の欠点を除去した高密度多層
配線基板の製造方法を提供することにある。 An object of the present invention is to form grooves in an insulating layer with predetermined dimensions on the surface of a substrate or an insulating layer, and to form wiring patterns on the side surfaces of these grooves by a thin film method. That is, the object of the present invention is to provide a method for manufacturing a high-density multilayer wiring board that eliminates the above-mentioned drawbacks by forming a three-dimensional pattern and forming multiple layers.
この発明の製造方法は耐熱性絶縁基板の表面に
予め定められたパターン溝が抜けるように絶縁層
の溝を形成する第1の工程と、前記、耐熱性絶縁
基板の表面と前記絶縁層の表面に蒸着あるいはス
パツタリングにより金属薄膜を形成する第2の工
程と、前記金属薄膜の表面にフオトレジストを塗
布する第3の工程と、前記フオトレジストに所望
のパターンを有するマスクを通して、光を斜めか
ら照射して前記絶縁層の側面部分のフオトレジス
トを除去するように露光、現像する第4の工程
と、前記除去されたフオトレジスト部分に金属メ
ツキする第5の工程と、前記金属メツキ部分以外
のフオトレジストおよび前記金属薄膜を剥離、エ
ツチングする第6の工程と、前記金属メツキのう
ち所望の部分以外の基板全面に絶縁層を形成する
第7の工程と、前記金属メツキの所望部分に
VIAFILL導体を形成する第8の工程とを少なく
とも1回以上繰返して多層化することを特徴とす
る。 The manufacturing method of the present invention includes a first step of forming grooves in the insulating layer so that predetermined pattern grooves are formed on the surface of the heat-resistant insulating substrate; a second step of forming a metal thin film by vapor deposition or sputtering; a third step of applying a photoresist to the surface of the metal thin film; and oblique irradiation of light through a mask having a desired pattern on the photoresist. a fourth step of exposing and developing to remove the photoresist on the side surface portions of the insulating layer; a fifth step of plating the removed photoresist portions with metal; a sixth step of peeling off and etching the resist and the metal thin film; a seventh step of forming an insulating layer on the entire surface of the substrate other than the desired portion of the metal plating;
The eighth step of forming a VIAFILL conductor is repeated at least once to form a multilayer structure.
次に本発明の実施例について図面を参照して詳
細に説明する。第1図から第8図は、本発明の高
密度多層配線基板の製造のための工程断面図を示
す。又、第9図は本発明の高密度多層配線基板と
従来の平面実装基板との1層当りの集積度比較を
示す。 Next, embodiments of the present invention will be described in detail with reference to the drawings. FIGS. 1 to 8 show cross-sectional views of the process for manufacturing the high-density multilayer wiring board of the present invention. Further, FIG. 9 shows a comparison of the degree of integration per layer between the high-density multilayer wiring board of the present invention and a conventional plane mounting board.
第1図はアルミナ(Al2O3)を主成分とする耐
熱性絶縁基板1の表面にガラス、アルミナ等を主
成分とする誘電体を予め、設計された通りに溝が
形成されるよう絶縁層2を形成した状態を示す。
実際、この溝の形状により、パターンの線巾およ
びピツチが決まる。換言すれば高密度の集積度合
が決定してしまうため十分な設計が必要となる。
絶縁層2の形成は絶縁ペーストのスクリーン印刷
法等で容易に形成できる。 Figure 1 shows a heat-resistant insulating substrate 1 whose main component is alumina (Al 2 O 3 ), and a dielectric material whose main component is glass, alumina, etc., is insulated in advance so that grooves are formed as designed. A state in which layer 2 is formed is shown.
In fact, the shape of this groove determines the line width and pitch of the pattern. In other words, sufficient design is required because the degree of high-density integration is determined.
The insulating layer 2 can be easily formed by a screen printing method using an insulating paste.
第2図は前記第1図の表面全体に、蒸着もしく
はスパツタリングにより、Ti(チタン)、Cu
(銅)、Pd(パラジウム)、Mo(モリブデン)、Ni
(ニツケル)、W(タングステン)、Al(アルミニ
ウム)等の金属を単体又は2つ以上組み合せて、
後述のメツキ下地用金属として500Å〜10000Åの
金属薄膜3を形成し、その上にフオトレジスト4
を塗布した状態を示す。 Figure 2 shows that Ti (titanium) and Cu are deposited on the entire surface of Figure 1 by vapor deposition or sputtering.
(copper), Pd (palladium), Mo (molybdenum), Ni
(nickel), W (tungsten), Al (aluminum), etc. alone or in combination of two or more,
A metal thin film 3 with a thickness of 500 Å to 10,000 Å is formed as a plating base metal to be described later, and a photoresist 4 is formed on it.
Shows the state in which it has been applied.
第3図は、前記フオトレジスト4の表面に、予
め定められた領域が露光されるように、マスク5
を通して光エネルギ6が照射されている状態を示
す。本発明の特徴として、パターンは前記絶縁溝
の側面に形成されるので、溝の形状により光エネ
ルギ6の照射角度を決定する。溝断面の底辺を
a,高さをb、底辺に対する光エネルギの照射角
度をθとすると、次の(1)式が与えられる。 FIG. 3 shows a mask 5 so that a predetermined area is exposed on the surface of the photoresist 4.
A state in which light energy 6 is irradiated through is shown. As a feature of the present invention, since the pattern is formed on the side surface of the insulating groove, the irradiation angle of the light energy 6 is determined by the shape of the groove. Assuming that the base of the groove cross section is a, the height is b, and the angle of light energy irradiation with respect to the base is θ, the following equation (1) is given.
tanθ=a/b ……(1)
これは光の直進性を利用したもので、マスク5
のパターンの基板に対する位置はギヤツプとの関
係から決定される。すなわち、ギヤツプが大きい
ほど通従の位置より離れてくる。溝断面の側面か
らのずれをl、マスク5とフオトレジスト4との
ギヤツプをd、光エネルギの照射角度をθとする
と次の(2)式が与えられる。 tanθ=a/b...(1) This takes advantage of the straightness of light, and the mask 5
The position of the pattern with respect to the substrate is determined from the relationship with the gap. That is, the larger the gap, the farther away it is from the normal position. Letting l be the deviation of the groove cross section from the side surface, d be the gap between the mask 5 and photoresist 4, and θ be the irradiation angle of the light energy, the following equation (2) is given.
l=d/tanθ ……(2)
実施例ではポジタイプのフオトレジスト4を用
いて光エネルギ6が照射された領域7を示す。第
4図は前記の照射領域7が現像することにより取
除かれた部分8の形成を示す。露光、現像を2回
実施すれば溝の両側面が取除かれる。 l=d/tanθ (2) In the embodiment, a region 7 irradiated with light energy 6 is shown using a positive type photoresist 4. FIG. 4 shows the formation of a portion 8 in which the irradiated area 7 has been removed by development. By performing exposure and development twice, both sides of the groove are removed.
第5図は前記フオトレジストが取除かれた部分
8に、Au(金)、Cu(銅)、Ni(ニツケル)、Pd
(パラジウム)等の金属を単体又は2つ以上組み
合せて部分メツキ9を施した状態を示す。 FIG. 5 shows that the portion 8 from which the photoresist has been removed is filled with Au (gold), Cu (copper), Ni (nickel), and Pd.
This shows a state in which partial plating 9 is applied using a metal such as (palladium) alone or in combination of two or more.
第6図は、前記部分メツキ9以外のフオトレジ
スト4および8金属薄膜3をそれぞれ剥離、エツ
チングして除去し、パターン10を形成した状態
を示す。この工程までで、一層の配線パターンの
形が完了する。第6図からも解かるように従来の
配線パターンを立てたような構造をしており密着
は絶縁層2との間でとつている。 FIG. 6 shows a state in which the photoresist 4 and the metal thin film 3 other than the partial plating 9 are removed by peeling and etching, and a pattern 10 is formed. By this step, the shape of one layer of wiring pattern is completed. As can be seen from FIG. 6, it has a structure similar to that of a conventional wiring pattern, and close contact with the insulating layer 2 is achieved.
第7図は前記パターン10のうち予め定められ
たスルーホール12が抜けるようにして第1絶縁
層11を形成した状態を示す。ここで前記溝の内
部に第1絶縁層11が入込まなくても何ら差支え
ない。かえつて入り込まないほうがクロストーク
やマイグレーシヨン等の防止になる。しかし第1
絶縁層11の表面は多層化のため凹凸を減らすよ
う研磨等を施すことも考えられる。 FIG. 7 shows a state in which the first insulating layer 11 is formed so that predetermined through holes 12 in the pattern 10 pass through. Here, there is no problem even if the first insulating layer 11 does not enter the inside of the groove. On the contrary, it is better to prevent crosstalk and migration from occurring. But the first
Since the surface of the insulating layer 11 is multilayered, it may be considered that the surface of the insulating layer 11 is polished or the like to reduce unevenness.
第8図は前記スルホール12にAu(金)、
Ag/Pd(銀/パラジウム)等のビアフイル導体
(VIAFILL)導体13を形成した状態を示す。第
1絶縁層11の表面から少し厚めにビアフイル導
体を形成すれば以後の多層化のための電気的コン
タクトには何ら支障はない。 FIG. 8 shows Au (gold) in the through hole 12.
A state in which a via fill conductor (VIAFILL) conductor 13 such as Ag/Pd (silver/palladium) is formed is shown. If the via fill conductor is formed a little thicker from the surface of the first insulating layer 11, there will be no problem with electrical contact for subsequent multilayering.
ここで、本発明の高密度多層配線基板と従来の
多層基板との1層当りの集積度の比較を考える。
前記第6図で説明したように、本発明の配線パタ
ーンの形状は、垂直方向の幅が従来パターンの線
巾に、又水平方向の幅が膜厚に相当する。 Let us now consider a comparison of the degree of integration per layer between the high-density multilayer wiring board of the present invention and a conventional multilayer board.
As explained above with reference to FIG. 6, in the shape of the wiring pattern of the present invention, the width in the vertical direction corresponds to the line width of the conventional pattern, and the width in the horizontal direction corresponds to the film thickness.
第9図は配線パターンの断面積が等しい、換言
すると導体抵抗の等しい場合の、1層当りのパタ
ーン実装密度の比較を示す。第9図より、パター
ン線巾が40μ、パターン間隔が40μの場合は、従
来の配線基板の実装に比べて1層当り約1.8倍の
集積度が可能となる。ただし膜厚は両者とも5μ
と仮定した。 FIG. 9 shows a comparison of pattern mounting densities per layer when the cross-sectional areas of the wiring patterns are the same, in other words, the conductor resistances are the same. From FIG. 9, when the pattern line width is 40 μm and the pattern spacing is 40 μm, the degree of integration per layer is about 1.8 times that of the conventional wiring board mounting. However, the film thickness is 5μ for both.
It was assumed that
本発明は以上説明したように、絶縁層の溝の両
側面に配線パターンを形成するため、従来の平面
実装配線基板に比べて、極めて高密度であり、又
クロストーク、マイグレーシヨン等の電気的欠陥
の少ない高密度多層配線基板の製造を可能にする
という効果がある。 As explained above, the present invention forms wiring patterns on both sides of the groove in the insulating layer, so it has an extremely high density compared to the conventional plane mounting wiring board, and also has electrical problems such as crosstalk and migration. This has the effect of making it possible to manufacture a high-density multilayer wiring board with few defects.
第1図乃至第8図は本発明の実施例を工程順に
示した断面図であり、第9図は本発明の効果を示
す図である。
尚、図において、1……耐熱性絶縁基板、2…
…絶縁層、3……金属薄膜、4……フオトレジス
ト、5……マスク、6……光エネルギ、7……照
射領域、8……取除かれた部分、9……部分メツ
キ、10……パターン、11……第1絶縁層、1
2……スルーホール、13……ビアフイル導体で
ある。
1 to 8 are cross-sectional views showing an embodiment of the present invention in the order of steps, and FIG. 9 is a diagram showing the effects of the present invention. In the figure, 1... heat-resistant insulating substrate, 2...
...Insulating layer, 3...Metal thin film, 4...Photoresist, 5...Mask, 6...Light energy, 7...Irradiation area, 8...Removed portion, 9...Partial plating, 10... ...Pattern, 11...First insulating layer, 1
2... Through hole, 13... Via film conductor.
Claims (1)
ーン溝が抜けるように絶縁層を形成する第1の工
程と、前記耐熱性絶縁基板の表面と前記絶縁層の
表面に蒸着あるいはスパツタリングにより金属薄
膜を形成する第2の工程と、前記金属薄膜の表面
にフオトレジストを塗布する第3の工程と、前記
フオトレジストに所望パターンを有するマスクを
通して、光を斜めから照射し前記絶縁層の溝の側
面部分のフオトレジストを除去するように露光、
現像する第4の工程と、前記除去されたフオトレ
ジスト部分に金属メツキする第5の工程と、前記
金属メツキ部分以外のフオトレジストおよび金属
薄膜を剥離、エツチングする第6の工程と、前記
金属メツキのうち所望の部分以外の基板全面に絶
縁層を形成する第7の工程と、前記金属メツキの
所望部分にビアフイル導体を形成する第8の工程
とを少なくとも1回以上繰返して多層化すること
を特徴とする高密度多層配線基板の製造方法。1. A first step of forming an insulating layer on the surface of a heat-resistant insulating substrate so that predetermined pattern grooves are formed, and forming a metal thin film by vapor deposition or sputtering on the surface of the heat-resistant insulating substrate and the surface of the insulating layer. a second step of applying a photoresist to the surface of the metal thin film; and a third step of applying a photoresist to the surface of the metal thin film, and irradiating the photoresist with oblique light through a mask having a desired pattern to form a side surface of the groove in the insulating layer. exposure to remove the photoresist,
a fourth step of developing, a fifth step of metal plating the removed photoresist portion, a sixth step of peeling off and etching the photoresist and metal thin film other than the metal plating portion, and the metal plating. The seventh step of forming an insulating layer on the entire surface of the substrate other than the desired portion, and the eighth step of forming a via fill conductor on the desired portion of the metal plating are repeated at least once to form a multilayer structure. A method for manufacturing a high-density multilayer wiring board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6547279A JPS55157296A (en) | 1979-05-25 | 1979-05-25 | Method of fabricating high density multilayer wiring substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6547279A JPS55157296A (en) | 1979-05-25 | 1979-05-25 | Method of fabricating high density multilayer wiring substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55157296A JPS55157296A (en) | 1980-12-06 |
| JPS6239560B2 true JPS6239560B2 (en) | 1987-08-24 |
Family
ID=13288079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6547279A Granted JPS55157296A (en) | 1979-05-25 | 1979-05-25 | Method of fabricating high density multilayer wiring substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157296A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151498A (en) * | 1983-02-18 | 1984-08-29 | 日本電気株式会社 | High density multilayer circuit board |
| JPS59151497A (en) * | 1983-02-18 | 1984-08-29 | 日本電気株式会社 | High density multilayer circuit board |
-
1979
- 1979-05-25 JP JP6547279A patent/JPS55157296A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55157296A (en) | 1980-12-06 |
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