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JPS6240846B2 - - Google Patents
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JPS6240846B2 - - Google Patents

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Publication number
JPS6240846B2
JPS6240846B2 JP1200578A JP1200578A JPS6240846B2 JP S6240846 B2 JPS6240846 B2 JP S6240846B2 JP 1200578 A JP1200578 A JP 1200578A JP 1200578 A JP1200578 A JP 1200578A JP S6240846 B2 JPS6240846 B2 JP S6240846B2
Authority
JP
Japan
Prior art keywords
solution
boat body
epitaxial growth
holder
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1200578A
Other languages
Japanese (ja)
Other versions
JPS54105466A (en
Inventor
Tetsuo Sekiwa
Makoto Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP1200578A priority Critical patent/JPS54105466A/en
Publication of JPS54105466A publication Critical patent/JPS54105466A/en
Publication of JPS6240846B2 publication Critical patent/JPS6240846B2/ja
Granted legal-status Critical Current

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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【発明の詳細な説明】 本発明はGaPなどの半導体素子の液相エピタキ
シヤル成長装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in a liquid phase epitaxial growth apparatus for semiconductor devices such as GaP.

一般に半導体素子の液相エピタキシヤル成長を
行なうときに、その結晶成長に供する溶液の厚さ
を調節するには普通次のようにして行なわれる。
すなわち摺動法で液相エピタキシヤル成長を行な
うときには、基板結晶を載置する摺動板の凹部の
深さをかえることによつて行ない、また基板結晶
を縦方向に保持し溶液を落下させて液相エピタキ
シヤル成長を行なうときには、基板結晶を配置す
る基板ホルダーの間隔を変えることによつて行な
われる。たとえばGaP基板に液相エピタキシヤル
成長を行なうときには、前述の二つの方法につい
ては量産という点からみると基板結晶を保持する
ホルダーを縦方向にならべて行なう後者の方法が
有利であることは云うまでもない。この方法のと
きに用いる液相エピタキシヤル成長装置の概要を
以下説明する。
Generally, when performing liquid phase epitaxial growth of semiconductor devices, the thickness of the solution used for crystal growth is generally adjusted as follows.
In other words, when performing liquid phase epitaxial growth by the sliding method, it is performed by changing the depth of the recess of the sliding plate on which the substrate crystal is placed, and by holding the substrate crystal vertically and allowing the solution to fall. Liquid phase epitaxial growth is performed by changing the spacing between substrate holders on which substrate crystals are placed. For example, when performing liquid phase epitaxial growth on a GaP substrate, it goes without saying that the latter method is more advantageous in terms of mass production than the two methods mentioned above, in which the holders that hold the substrate crystals are lined up vertically. Nor. The outline of the liquid phase epitaxial growth apparatus used in this method will be explained below.

第1図に示すようにボート本体1は箱状をな
し、このボート本体1の上方には摺動板2を介し
て溶液槽3があり、またボート本体1下方には摺
動板4を介して溶液溜5がある。前記ボート本体
1の相対向する内側面には基板結晶を保持するホ
ルダー6を所定の間隔を保つて縦方向に重ね合わ
せて収納できるように突起部7が形成されてい
る。
As shown in FIG. 1, the boat body 1 has a box shape, and a solution tank 3 is located above the boat body 1 via a sliding plate 2, and a solution tank 3 is located below the boat body 1 via a sliding plate 4. There is a solution reservoir 5. Protrusions 7 are formed on opposing inner surfaces of the boat body 1 so that holders 6 for holding substrate crystals can be accommodated vertically stacked one on top of the other with a predetermined interval maintained.

このように構成された装置でエピタキシヤル成
長を行なうには、次のようにして行なう。すなわ
ち先ず基板結晶を保持したホルダーをボート本体
の上側開口から突起部と突起部との間にそれぞれ
収納して固定する。溶液溜、摺動板、ボート本
体、摺動板、溶液槽の順に重ね、これを加熱炉に
挿入し、所定の温度曲線によつて加熱し、摺動板
の摺動によつて溶液槽に入れられた溶液をボート
本体内に入れる。ホルダーに保持された基板結晶
上に溶液を所定の厚さに維持し、その後ボート本
体を冷却させることによつて所望の結晶を成長さ
せる。ボート本体下側の摺動板を摺動させて溶液
を溶液溜に落とす。このようにして基板結晶にエ
ピタキシヤル成長を行なう。
Epitaxial growth is performed using the apparatus configured as described above as follows. That is, first, the holders holding the substrate crystals are housed and fixed between the protrusions from the upper opening of the boat body. Layer the solution reservoir, sliding plate, boat body, sliding plate, and solution tank in this order, insert them into a heating furnace, heat them according to a predetermined temperature curve, and move them into the solution tank by sliding the sliding plate. Put the solution into the boat body. A desired crystal is grown by maintaining the solution at a predetermined thickness on the substrate crystal held in the holder and then cooling the boat body. Slide the sliding plate on the bottom of the boat to drop the solution into the solution reservoir. In this way, epitaxial growth is performed on the substrate crystal.

上述のような液相エピタキシヤル成長を行なう
ときに用いられるボート本体は普通カーボンで製
作されているものであつて、加工性よく所定通り
の寸法のものが得られている。しかし溶液は有害
な不純物の汚染にはきわめて敏感であつて、カー
ボン製のボート本体を使用しているときにはカー
ボンに吸着されたいおう化合物などの不純物の混
入があつて溶液の汚染を防ぐことはむつかしく、
また不純物濃度のコントロールが困難である。さ
らにたとえばGaPの赤色素子を製作するときには
酸素をドープしなければならないが、その場合に
はカーボン製ボート本体が酸化されて寿命が短か
くなつてしまう。これらの不具合に対してはボー
ト本体を石英などの不活性な材料で作ればよい
が、この場合は加工性の問題からホルダーを所定
通り保持するような形状にボート本体を形成する
ことが困難であつて、品質ならびに作業性の点か
らも改善が要望されていた。
The boat body used when carrying out liquid phase epitaxial growth as described above is usually made of carbon, and can be easily processed to the desired dimensions. However, solutions are extremely sensitive to contamination with harmful impurities, and when a carbon boat body is used, impurities such as sulfur compounds adsorbed by the carbon may enter the solution, making it difficult to prevent contamination of the solution. ,
Furthermore, it is difficult to control the impurity concentration. Furthermore, when making GaP red elements, for example, they must be doped with oxygen, which oxidizes the carbon boat body and shortens its lifespan. To solve these problems, the boat body can be made of an inert material such as quartz, but in this case, it is difficult to form the boat body into a shape that will hold the holder in place due to workability issues. At the same time, improvements have been requested from the viewpoints of quality and workability.

本発明はこれらの点にかんがみてなされたもの
であつて、溶液の汚染を防ぎ良好な品質のものが
得られ経済性のすぐれた液相エピタキシヤル成長
装置を提供するものである。すなわち石英等の不
活性な材料でホルダー保持機構を有しない簡単な
形状のボート本体を形成すると共に、ボート本体
内に収納するホルダーを同じく不活性な材料で製
作しかつ形状をボート本体に収納したとき固定と
溶液の流れのためにホルダー表面に溶液の流れる
方向に沿つてその両端部に突出縁部を形成する。
The present invention has been made in view of these points, and it is an object of the present invention to provide a liquid phase epitaxial growth apparatus which prevents solution contamination, provides good quality products, and is highly economical. In other words, the boat body is made of an inert material such as quartz and has a simple shape without a holder holding mechanism, and the holder to be housed inside the boat body is made of the same inert material and the shape is housed in the boat body. When fixing and for solution flow, form protruding edges on the holder surface at both ends along the solution flow direction.

以下図を参照して本発明の装置を説明する。第
2図に示すように、11は石英製のボート本体に
して、内側面にはホルダー保持機構はなく、底面
には溶液落下用の開孔25が設けられ、12は溶
液の注入される開孔13を有する摺動板14はこ
の摺動板12を介してボート本体11の上方に配
置され底面に溶液をボート本体11に注入する開
孔15を有する溶液槽、16は他の摺動板にし
て、ボート本体11の下方に溶液を落下させるた
めの開孔17を有し、18はこの摺動板16を介
してボート本体の下方に配置された溶液溜であ
る。前記ボード本体11に収納されるホルダー2
0は第3図に示すように、石英製の板状体21の
両端面に直方体の石英製の部材22をそれぞれ貼
付して形成されている。この両端の縁部の間に形
成される凹部に基板結晶23を保持するものであ
る。
The apparatus of the present invention will be explained below with reference to the drawings. As shown in Fig. 2, 11 is a boat body made of quartz, there is no holder holding mechanism on the inner surface, an opening 25 is provided on the bottom for dropping the solution, and 12 is an opening into which the solution is injected. A sliding plate 14 having a hole 13 is placed above the boat body 11 through the sliding plate 12, and a solution tank having an opening 15 at the bottom for injecting a solution into the boat body 11, and 16 is another sliding plate. The boat body 11 has an opening 17 for allowing the solution to fall below the boat body 11, and 18 is a solution reservoir disposed below the boat body via the sliding plate 16. Holder 2 housed in the board body 11
As shown in FIG. 3, 0 is formed by attaching rectangular parallelepiped quartz members 22 to both end surfaces of a quartz plate-like member 21, respectively. The substrate crystal 23 is held in a recess formed between the edges of both ends.

前記のように構成された本発明の装置によつて
液相エピタキシヤル成長をさせるには、ホルダー
に基板結晶を保持し、これを順次ボート本体に傾
斜して互に密着する如く重ねあわせて基板結晶を
縦方向に保持して収納する。このときホルダーの
両端の縁部はそれぞれボート本体の上下の方向に
沿つて位置するようにして入れる。次いで溶液1
9の入つた溶液槽、摺動板、ホルダー20の収納
されたボート本体、摺動板、溶液溜の順に重ねあ
わせて加熱炉(図示せず)に挿入する。所定の加
熱温度、加熱時間にしたがつて作業を行ない、基
板結晶上に液相エピタキシヤル成長をさせる。
In order to perform liquid phase epitaxial growth using the apparatus of the present invention configured as described above, the substrate crystals are held in a holder, and the substrates are stacked one after another at an angle to the boat body so that they are in close contact with each other. Hold and store the crystal vertically. At this time, the holder is inserted so that the edges at both ends are located along the vertical direction of the boat body. Then solution 1
The solution tank containing No. 9, the sliding plate, the boat body containing the holder 20, the sliding plate, and the solution reservoir are stacked in this order and inserted into a heating furnace (not shown). The operation is performed according to a predetermined heating temperature and heating time to cause liquid phase epitaxial growth on the substrate crystal.

このときはホルダーがボート本体内に並列され
て収納され、ホルダー両端の縁部によつて複数枚
のホルダーを互に少し傾斜させて密着する如く固
定させることができ、かつ縁部により形成され基
板結晶を保持する凹部の深さも縁部形成部材の高
さを適切にきめることによつてそれぞれ所定通り
に定めることができる。すなわちこの凹部の深さ
を自由に変えて、基板結晶上の溶液の厚さの調節
することができる。したがつて液相エピタキシヤ
ル成長させるとき溶液槽から注入された基板結晶
上の溶液の厚さを所定通りにでき、ばらつきなく
安定した特性のエピタキシヤル成長層を生成する
ことができる。またボート本体ならびにホルダー
は石英を用いても容易に製作できて、所定通りの
作業を行なうとき石英製なので溶液への不純物混
入のおそれもなく、エピタキシヤル成長層の特性
の向上がはかられる。さらにボートなども従来に
くらべてきわめて長期にわたつて使用することが
できる。このように品質特性の向上と経済性の向
上とが本発明の装置によつて得られるものであ
る。
At this time, the holders are stored in parallel in the boat body, and the edges on both ends of the holders allow the multiple holders to be fixed in close contact with each other at a slight inclination. The depth of the recess for holding the crystal can also be determined as desired by appropriately determining the height of the edge forming member. That is, by freely changing the depth of this recess, the thickness of the solution on the substrate crystal can be adjusted. Therefore, during liquid phase epitaxial growth, the thickness of the solution injected from the solution bath onto the substrate crystal can be kept to a predetermined value, and an epitaxially grown layer with stable characteristics without variations can be produced. Furthermore, the boat body and the holder can be easily manufactured using quartz, and since they are made of quartz, there is no fear of impurities being mixed into the solution when performing a prescribed operation, and the characteristics of the epitaxially grown layer can be improved. Furthermore, boats and the like can be used for a much longer period of time than before. As described above, improved quality characteristics and improved economic efficiency can be obtained by the apparatus of the present invention.

次にGaPのP型の液相エピタキシヤル成長を石
英ボートとカーボンボートとを用いて行なつた結
果を第5図に示す。図の横軸は液相成長にボート
を使用した回数を、又縦軸はアクセプタ濃度と発
光効率とを示す。p型エピタキシヤル成長は最高
温度1050℃で行ない、アクセプタ濃度はp−n接
合界面20μ附近での値を示し、発光効率は0.3mm
口のペレツトに順方向に6mA流した時の値を任
意にえらんだもの10個の平均値で示した。図中1
は本発明によるものの発光効率、2は従来の発光
効率、3は本発明によるもののアクセプタ濃度、
4は従来のアクセプタ濃度を示す。
Next, FIG. 5 shows the results of liquid phase epitaxial growth of P type GaP using a quartz boat and a carbon boat. The horizontal axis of the figure shows the number of times the boat was used for liquid phase growth, and the vertical axis shows the acceptor concentration and luminous efficiency. P-type epitaxial growth was performed at a maximum temperature of 1050℃, the acceptor concentration was around 20μ at the p-n junction interface, and the luminous efficiency was 0.3mm.
The average value of 10 arbitrarily selected values when 6 mA was applied in the forward direction to the pellet in the mouth was shown. 1 in the diagram
is the luminous efficiency of the one according to the present invention, 2 is the luminous efficiency of the conventional one, 3 is the acceptor concentration of the one according to the present invention,
4 indicates the conventional acceptor concentration.

この図から分るように、本発明の装置による
と、アクセプタ濃度のばらつきは少なく、発光効
率は高くて、従来のものよりも特性の著しい向上
がみられ、すぐれた効果を示すものである。
As can be seen from this figure, the device of the present invention has little variation in acceptor concentration, high luminous efficiency, and has significantly improved characteristics over the conventional device, demonstrating excellent effects.

またボート材質は、前記の石英のほかに、BN
やサフアイア等高温で安定性のある物質が用いら
れること勿論である。また状況によつてはカーボ
ン等が使われ得るものである。
In addition to the above-mentioned quartz, the boat material is BN
Of course, materials that are stable at high temperatures, such as sapphire or sapphire, are used. Also, depending on the situation, carbon or the like may be used.

さらに基板ホルダーの形状として前述のものの
ほかに、本発明の要旨に従い、同じような効果を
示す図示以外の変形構造も得られること勿論であ
る。たとえば第4図に示すように、ホルダー31
の基板33収容部がくりぬかれて凹部32を形成
し、その表面の両端部に溶液の流れる溝34が設
けられているものなどをホルダーとして用いて
も、同じように特性の向上したものが得られると
いうすぐれた効果を示すものである。
Furthermore, in addition to the above-mentioned shapes of the substrate holder, it is of course possible to obtain modified structures other than those shown in the drawings that exhibit similar effects according to the gist of the present invention. For example, as shown in FIG.
A holder with similar improved characteristics can also be obtained by using a holder in which the housing part of the substrate 33 is hollowed out to form a recess 32, and grooves 34 for the solution to flow are provided at both ends of the surface. This shows the excellent effect of reducing

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の液相エピタキシヤル成長装置の
概略を示す断面図、第2図は本発明の液相エピタ
キシヤル成長装置の概略を示す断面図、第3図は
本発明の基板結晶を保持するホルダーの断面図、
第4図は同じく他の実施例の平面図、第5図は液
相エピタキシヤル成長させた半導体素子のアクセ
プタ濃度および発光効率と液相エピタキシヤル成
長用ボートの使用回数との関係を示す曲線図であ
る。 11……ボート本体、12,16……摺動板、
14……溶液槽、18……溶液溜、20……ホル
ダー、21……ホルダーの板状体部分、22……
ホルダーの両端縁部分、31……ホルダー、32
……ホルダーの凹部、34……ホルダーの溝。
Fig. 1 is a cross-sectional view schematically showing a conventional liquid phase epitaxial growth apparatus, Fig. 2 is a cross-sectional view schematically showing a liquid phase epitaxial growth apparatus of the present invention, and Fig. 3 is a cross-sectional view schematically showing a liquid phase epitaxial growth apparatus of the present invention. A cross-sectional view of the holder,
FIG. 4 is a plan view of another example, and FIG. 5 is a curve diagram showing the relationship between the acceptor concentration and luminous efficiency of a semiconductor device grown by liquid phase epitaxial growth and the number of times a boat for liquid phase epitaxial growth is used. It is. 11... Boat body, 12, 16... Sliding plate,
14... Solution tank, 18... Solution reservoir, 20... Holder, 21... Plate body part of holder, 22...
Both end edges of the holder, 31...Holder, 32
...Concavity of the holder, 34...Groove of the holder.

Claims (1)

【特許請求の範囲】[Claims] 1 複数枚の基板結晶ホルダーを傾斜して互に密
着する如く重ね合わせ収納するボート本体と、こ
のボート本体の上方と下方とにそれぞれ摺動板を
介して配置された溶液槽と溶液溜とを備え、前記
摺動板の摺動に伴い溶液がボート本体さらには溶
液溜へと流れるように構成され、前記ホルダーの
表面両端部に溶液の流れる方向に沿つて突出縁部
が形成されこの突出縁部が液厚を規制することを
特徴とする液相エピタキシヤル成長装置。
1. A boat body in which a plurality of substrate crystal holders are stacked and stored in close contact with each other at an angle, and a solution tank and a solution reservoir are respectively arranged above and below the boat body via sliding plates. The solution is configured to flow into the boat body and further into the solution reservoir as the sliding plate slides, and projecting edges are formed on both ends of the surface of the holder along the direction in which the solution flows. A liquid phase epitaxial growth apparatus characterized in that a part regulates liquid thickness.
JP1200578A 1978-02-07 1978-02-07 Liquid-phase eptaxial growth unit Granted JPS54105466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1200578A JPS54105466A (en) 1978-02-07 1978-02-07 Liquid-phase eptaxial growth unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1200578A JPS54105466A (en) 1978-02-07 1978-02-07 Liquid-phase eptaxial growth unit

Publications (2)

Publication Number Publication Date
JPS54105466A JPS54105466A (en) 1979-08-18
JPS6240846B2 true JPS6240846B2 (en) 1987-08-31

Family

ID=11793459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1200578A Granted JPS54105466A (en) 1978-02-07 1978-02-07 Liquid-phase eptaxial growth unit

Country Status (1)

Country Link
JP (1) JPS54105466A (en)

Also Published As

Publication number Publication date
JPS54105466A (en) 1979-08-18

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