JPS6241337B2 - - Google Patents
Info
- Publication number
- JPS6241337B2 JPS6241337B2 JP12897080A JP12897080A JPS6241337B2 JP S6241337 B2 JPS6241337 B2 JP S6241337B2 JP 12897080 A JP12897080 A JP 12897080A JP 12897080 A JP12897080 A JP 12897080A JP S6241337 B2 JPS6241337 B2 JP S6241337B2
- Authority
- JP
- Japan
- Prior art keywords
- metal pipe
- metal
- cup
- molded body
- shaped molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 9
- 239000003566 sealing material Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
【発明の詳細な説明】
この発明は、金属パイプで保護された温度セン
サ素子、特に前記金属パイプを絶縁するタイプの
温度センサ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a temperature sensor element protected by a metal pipe, particularly a temperature sensor element of a type in which the metal pipe is insulated.
従来、この種のセンサ素子は被測定物にさし込
んでその温度を検出する用途で用いられていた。
その例を第１図および第２図に示す。第１図のも
のは、パイプ１の内部にあらかじめ完成した素子
２を入れ、アルミナ管やシリコン樹脂などの絶縁
チユーブ３でパイプ１と金属ターミナル４とを絶
縁していた。第２図のものは、あらかじめ完成し
た素子２を金属パイプ１の内部に入れ、この金属
パイプ１内に充填したMgOなどの耐熱絶縁粉末
５で絶縁していた。完成素子２は第３図に示すよ
うに抵抗温度係数の大きい半導体材料７を２本の
金属ターミナル４′の間に位置せしめあらかじめ
焼成させた後ガラス等の絶縁皮膜層８を設けてい
た。この完成素子２を用いて第１図または第２図
のもののように加工するには、いずれも金属ター
ミナル４′と４をスポツト溶接等により接続して
いた。６はその接続部である。しかし、これらの
従来例では、いずれも完成素子２を金属パイプ１
内に収容する構造であるため熱応答速度が遅い欠
点があり、また前記金属ターミナル４，４′の接
続部６や金属パイプ１内の各材の支持構造などか
ら耐震性に弱い問題があつた。また、スウエージ
ングなどによる減径工程は、この構造では完成素
子２を損傷するおそれがあり、極めて困難であつ
た。 Conventionally, this type of sensor element has been used to detect the temperature of an object by inserting it into the object.
Examples are shown in FIGS. 1 and 2. In the one shown in FIG. 1, a completed element 2 is placed inside a pipe 1, and the pipe 1 and a metal terminal 4 are insulated with an insulating tube 3 made of alumina tube, silicone resin, or the like. In the device shown in FIG. 2, a previously completed element 2 is placed inside a metal pipe 1 and insulated with heat-resistant insulating powder 5 such as MgO filled into the metal pipe 1. In the completed device 2, as shown in FIG. 3, a semiconductor material 7 having a large temperature coefficient of resistance was placed between two metal terminals 4', fired in advance, and then an insulating film layer 8 made of glass or the like was provided. In order to process the finished element 2 as shown in FIG. 1 or 2, the metal terminals 4' and 4 were connected by spot welding or the like. 6 is the connection part. However, in all of these conventional examples, the completed element 2 is connected to the metal pipe 1.
Since the structure is housed inside, there is a drawback that the thermal response speed is slow, and the connection part 6 of the metal terminals 4, 4' and the support structure of each material in the metal pipe 1 have a problem of weak earthquake resistance. . In addition, a diameter reduction process such as swaging is extremely difficult with this structure because there is a risk of damaging the completed element 2.
したがつて、この発明の目的は、熱応答速度お
よび耐震性に優れ、かつ製造過程で欠陥を生じる
問題のない温度センサ素子を提供することであ
る。 Therefore, an object of the present invention is to provide a temperature sensor element that has excellent thermal response speed and earthquake resistance, and is free from defects in the manufacturing process.
この発明の一実施例を第４図に示す。その製造
方法とともに説明すると、あらかじめ先端を閉塞
された金属パイプ９の内部に、アルミナ、マグネ
シア、またはムライト、フオルステライトなどの
耐熱性絶縁材からなるカツプ状成形体１０を入れ
る。この後、２本の金属ターミナル１１を先端が
カツプ状成形体１０内に位置するように金属パイ
プ９内に挿入する。そして、カツプ状成形体１０
内に抵抗温度係数の大きい半導体材料１５を充填
し、この半導体材料１５内に金属ターミナル１１
の先端を埋入させる。半導体材料１５には一般的
に知られているサーミスタ材料、例えばMgO、
Cr2O3、Al2O3、MnO2、NiO、CuO、TiO2、BaO
などの酸化物などからなる材料のうち金属パイプ
９の融点以下で焼結される構成の材料を用い、こ
の材料を仮焼および粉砕したものを充填する。そ
の後、温度抵抗係数は極めて小さくてかつ絶縁性
の大きいマグネシアまたはアルミナなどの粉末か
らなる耐熱性絶縁材料１２を、金属パイプ９の残
りの空間に充填する。なお、カツプ状成形体１０
に半導体材料１５の充填されていない部分がある
と、その部分にも耐熱性絶縁材料１２を充填す
る。この後、充填密度を高め、熱伝達を良くし、
かつ耐震性を向上させるために金属パイプ９を減
径する。この後、半導体材料１５が焼結しうる温
度でかつ金属パイプ９が溶融しない温度範囲で加
熱焼結させた後、金属パイプ９の開口部を低融点
ガラスやシリコン樹脂などからなるシール材１３
により、大気中の湿気が入らないように封止し、
必要に応じ沿面距離確保の手段として、チユーブ
１４を金属ターミナル１１に外嵌させる。なお、
金属パイプ９の先端部９ａの形状は、第４図のよ
うに平滑なものであつても、第５図のように先が
とがつた形状でもよく、特に問わない。 An embodiment of this invention is shown in FIG. To explain its manufacturing method, a cup-shaped molded body 10 made of a heat-resistant insulating material such as alumina, magnesia, mullite, or forsterite is placed inside a metal pipe 9 whose tip is closed in advance. Thereafter, the two metal terminals 11 are inserted into the metal pipe 9 so that their tips are located inside the cup-shaped molded body 10. And the cup-shaped molded body 10
A semiconductor material 15 having a large temperature coefficient of resistance is filled inside the semiconductor material 15, and a metal terminal 11 is placed inside the semiconductor material 15.
Insert the tip of the The semiconductor material 15 includes commonly known thermistor materials, such as MgO,
Cr2O3 , Al2O3 , MnO2 , NiO , CuO, TiO2 , BaO
Among materials such as oxides such as oxides, a material which is sintered at a temperature below the melting point of the metal pipe 9 is used, and this material is calcined and pulverized and then filled. Thereafter, the remaining space of the metal pipe 9 is filled with a heat-resistant insulating material 12 made of powder such as magnesia or alumina, which has an extremely small temperature resistance coefficient and a high insulating property. Note that the cup-shaped molded body 10
If there is a portion that is not filled with the semiconductor material 15, that portion is also filled with the heat-resistant insulating material 12. After this, increase the packing density and improve heat transfer,
In addition, the diameter of the metal pipe 9 is reduced in order to improve earthquake resistance. Thereafter, the opening of the metal pipe 9 is sealed with a sealing material 13 made of low melting point glass, silicone resin, etc.
to prevent atmospheric moisture from entering,
If necessary, the tube 14 is fitted onto the metal terminal 11 as a means to ensure creepage distance. In addition,
The shape of the tip 9a of the metal pipe 9 is not particularly limited, and may be smooth as shown in FIG. 4 or may be pointed as shown in FIG.
つぎに、この温度センサ素子の作用を説明す
る。温度抵抗値の出力は２本の金属ターミナル１
１間で得られ、また耐熱性絶縁材料１２とカツプ
状成形体１０により金属パイプ９と金属ターミナ
ル１１とは完全に絶縁されている。半導体材料１
５は成形体１０を介して金属パイプ９内に収容さ
れているが、前記従来の完成素子２を用いるもの
と比べて金属パイプ９と半導体材料１５との間の
介在物が少なく、優れた熱応答性が得られる。ま
た、金属パイプ９内に充填された半導体材料１５
および耐熱性絶縁材料１２に金属ターミナル１１
が埋入された状態であるから、従来の第１図のも
ののように金属パイプ１内に各材が遊嵌して配置
されるものと異なり、耐震性が優れている。ま
た、第２図の金属ターミナル４，４′の接続部６
が不要なことにおいても耐震性に優れている。さ
らに、金属パイプ９の減径の後に焼結を行なうこ
とができるので、減径工程において半導体材料１
５の損傷や特性変化が生じたりすることがない。
金属ターミナル１１間に生じる抵抗出力は、金属
ターミナル１１の半導体材料１５への埋入深さを
調整することにより、自由な値に変更して設定す
ることができる。 Next, the operation of this temperature sensor element will be explained. Temperature resistance value output is from two metal terminals 1
The metal pipe 9 and the metal terminal 11 are completely insulated by the heat-resistant insulating material 12 and the cup-shaped molded body 10. Semiconductor material 1
5 is housed in a metal pipe 9 via a molded body 10, but compared to the conventional completed element 2, there are fewer inclusions between the metal pipe 9 and the semiconductor material 15, and excellent thermal properties are achieved. Responsiveness is achieved. In addition, the semiconductor material 15 filled in the metal pipe 9
and a metal terminal 11 on a heat-resistant insulating material 12
Unlike the conventional pipe shown in FIG. 1, in which each member is loosely fitted into the metal pipe 1, it has excellent earthquake resistance. Also, the connection part 6 of the metal terminals 4, 4' in Fig. 2
It has excellent earthquake resistance even though it is unnecessary. Furthermore, since sintering can be performed after the diameter reduction of the metal pipe 9, the semiconductor material 1 can be sintered during the diameter reduction process.
5. No damage or change in characteristics occurs.
The resistance output generated between the metal terminals 11 can be freely changed and set to a value by adjusting the depth of embedding the metal terminals 11 into the semiconductor material 15.
以上のように、この発明の温度センサ素子は、
金属パイプに耐熱性絶縁材からなるカツプ状成形
体を内嵌し、金属パイプに挿入したリード線の先
端を、前記カツプ状成形体に充填された半導体材
料に埋入させたものであるから、従来のものと同
様に金属パイプの絶縁された素子に構成される
が、従来の完成品の素子を金属パイプに収容する
ものと異なり、半導体材料と金属パイプとの間の
介在物が少なく優れた熱応答性が得られ、さらに
耐震性にも優れ、また製造工程で半導体材料に損
傷や抵抗特性変化を生じたりする問題がないとい
う効果がある。 As described above, the temperature sensor element of the present invention is
A cup-shaped molded body made of a heat-resistant insulating material is fitted inside a metal pipe, and the tip of a lead wire inserted into the metal pipe is embedded in the semiconductor material filled in the cup-shaped molded body. It is composed of an insulated element of a metal pipe like the conventional one, but unlike the conventional one in which the finished element is housed in a metal pipe, there are fewer inclusions between the semiconductor material and the metal pipe. It has the advantage of providing thermal responsiveness, excellent earthquake resistance, and no problems such as damage to semiconductor materials or changes in resistance characteristics during the manufacturing process.
第１図および第２図はそれぞれ従来の温度セン
サ素子装置の部分切欠側面図、第３図はその装置
に内蔵する完成素子の断面図、第４図はこの発明
の一実施例の部分切欠側面図、第５図は他の実施
例の断面図である。
９……金属パイプ、１０……カツプ状成形体、
１１……金属ターミナル、１２……耐熱性絶縁材
料、１３……シール材、１５……半導体材料。
1 and 2 are respectively partially cutaway side views of a conventional temperature sensor element device, FIG. 3 is a sectional view of a completed element built into the device, and FIG. 4 is a partially cutaway side view of an embodiment of the present invention. FIG. 5 is a sectional view of another embodiment. 9...Metal pipe, 10...Cup-shaped molded body,
11...Metal terminal, 12...Heat-resistant insulating material, 13...Sealing material, 15...Semiconductor material.
Claims (1)
閉塞側端部に内嵌した耐熱性絶縁材からなるカツ
プ状成形体と、前記金属パイプ内に複数本平行に
配置され一端が前記成形体内に挿入されるととも
に他端が前記金属パイプの開口端から突出した金
属ターミナルと、前記カツプ状成形体内に充填し
て焼結され前記金属ターミナルの一端を埋入させ
た抵抗温度係数の大きい半導体材料と、前記金属
パイプの内部の残りの空間に充填された耐熱性絶
縁材料と、前記金属パイプの開口部を封止するシ
ール材とを備えた温度センサ素子。1 A metal pipe with one end closed, a cup-shaped molded body made of a heat-resistant insulating material fitted into the closed end of the metal pipe, and a plurality of cup-shaped molded bodies arranged in parallel within the metal pipe, one end of which is inserted into the molded body. a metal terminal whose other end protrudes from the open end of the metal pipe; a semiconductor material having a large temperature coefficient of resistance that is filled and sintered in the cup-shaped molded body and embeds one end of the metal terminal; A temperature sensor element comprising: a heat-resistant insulating material filling the remaining space inside the metal pipe; and a sealing material sealing an opening of the metal pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128970A JPS5752834A (en) | 1980-09-13 | 1980-09-13 | Temperature sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128970A JPS5752834A (en) | 1980-09-13 | 1980-09-13 | Temperature sensor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5752834A JPS5752834A (en) | 1982-03-29 |
| JPS6241337B2 true JPS6241337B2 (en) | 1987-09-02 |
Family
ID=14997904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55128970A Granted JPS5752834A (en) | 1980-09-13 | 1980-09-13 | Temperature sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5752834A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0534543U (en) * | 1991-10-11 | 1993-05-07 | 日本特殊陶業株式会社 | Temperature sensor |
| JP2000088673A (en) * | 1998-09-17 | 2000-03-31 | Denso Corp | Temperature sensor |
-
1980
- 1980-09-13 JP JP55128970A patent/JPS5752834A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5752834A (en) | 1982-03-29 |
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