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JPS6241377B2 - - Google Patents
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JPS6241377B2 - - Google Patents

Info

Publication number
JPS6241377B2
JPS6241377B2 JP55004230A JP423080A JPS6241377B2 JP S6241377 B2 JPS6241377 B2 JP S6241377B2 JP 55004230 A JP55004230 A JP 55004230A JP 423080 A JP423080 A JP 423080A JP S6241377 B2 JPS6241377 B2 JP S6241377B2
Authority
JP
Japan
Prior art keywords
detection signal
detection
gate
amplifier
dynodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55004230A
Other languages
Japanese (ja)
Other versions
JPS56101581A (en
Inventor
Toshijiro Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP423080A priority Critical patent/JPS56101581A/en
Publication of JPS56101581A publication Critical patent/JPS56101581A/en
Publication of JPS6241377B2 publication Critical patent/JPS6241377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/208Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Description

【発明の詳細な説明】 本発明は質量分析装置、イオンマイクロアナラ
イザ等の検出系の様に2次電子増倍管を備えた検
出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a detection device equipped with a secondary electron multiplier, such as a detection system such as a mass spectrometer or an ion microanalyzer.

従来2次電子増倍管を備えた検出装置は例えば
第1図に示す様な構成を有している。同図におい
てD1〜Doはダイノードであり、各ダイノードに
は高圧電源1からの負電圧を抵抗2によつて分圧
して供給している。3は電子コレクタ、4は該コ
レクタ3に流入する電流を電圧信号として取り出
す電流検出増巾器である。
A conventional detection device equipped with a secondary electron multiplier has a configuration as shown in FIG. 1, for example. In the figure, D 1 to D o are dynodes, and a negative voltage from a high voltage power supply 1 is divided by a resistor 2 and supplied to each dynode. 3 is an electronic collector, and 4 is a current detection amplifier that extracts the current flowing into the collector 3 as a voltage signal.

この様な従来装置では得られる検出信号aのダ
イナミツクレンジは増巾器4のノイズレベルに依
存するので限界があり、その限界を超えてダイナ
ミツクレンジを拡大するために(1)高圧電源1の出
力電圧を切換えて増倍管の利得を変えるか、又は
(2)増巾器4の帰還抵抗を切換えて利得を変えるこ
とが行なわれていた。
In such a conventional device, the dynamic range of the detection signal a obtained is limited because it depends on the noise level of the amplifier 4. In order to expand the dynamic range beyond that limit, (1) the high voltage power supply 1 Change the gain of the multiplier tube by switching the output voltage of the
(2) The gain was changed by switching the feedback resistor of the amplifier 4.

ところが(1)、(2)とも切換えてから安定状態にな
るまでの切換時間が数10ミリsec以上になるた
め、検出信号が1ミリsec以下の早い変動を含む
質量分析装置の場合は測定中の切換はできず、測
定する前にオペレータが予め切換操作を行う必要
があり面倒であつた。
However, in both (1) and (2), the switching time from switching to stabilization is several tens of milliseconds or more, so in the case of a mass spectrometer where the detection signal includes rapid fluctuations of less than 1 millisecond, it may be difficult to obtain a stable state during measurement. It was not possible to switch between the two, and the operator had to perform a switching operation before making a measurement, which was troublesome.

本発明はこの様な従来の問題点に鑑みてなされ
たものであり、2次電子増倍管の1つ又はそれ以
上の中間段ダイノードに流入する個々の電流を検
出する電流検出増巾器を付加し、各々の増巾器か
らの検出信号及び電子コレクタから得られる本来
の検出信号のうち飽和しないで最もレベルの大き
いものを選択的に取出すための選択手段を設ける
ことによりダイナミツクレンジの切換を瞬時に行
うことのできる検出装置を提供することを目的と
するものである。以下図面を用いて本発明を詳述
する。
The present invention has been made in view of these conventional problems, and provides a current detection amplifier for detecting individual currents flowing into one or more intermediate stage dynodes of a secondary electron multiplier. In addition, dynamic range switching is achieved by providing a selection means for selectively extracting the highest level signal without saturation among the detection signals from each amplifier and the original detection signal obtained from the electronic collector. The object of the present invention is to provide a detection device that can instantaneously perform the following steps. The present invention will be explained in detail below using the drawings.

第2図は本発明の一実施例の構成を示す図であ
り、第1図に示された従来例に加えて所定の中間
段ダイノードDaに流入する電子流を検出するた
めの電流検出増巾器5が設けられている。該増巾
器5から得られた検出信号bは直流高電圧に重畳
しているため、光半導体素子等を用いて入出力間
を直流的に絶縁した絶縁型直流増巾器6を介して
取り出される。7は該検出信号b又は電流検出増
巾器4からの検出信号aのいずれか一方を取り出
すためのFETゲートであり、該FETゲートは選
択回路8によつて切換えられる。
FIG. 2 is a diagram showing the configuration of an embodiment of the present invention, in which, in addition to the conventional example shown in FIG. A drawer 5 is provided. Since the detection signal b obtained from the amplifier 5 is superimposed on a high DC voltage, it is taken out via an isolated DC amplifier 6 in which the input and output are DC-insulated using an optical semiconductor element or the like. It can be done. Reference numeral 7 denotes a FET gate for taking out either the detection signal b or the detection signal a from the current detection amplifier 4, and the FET gate is switched by the selection circuit 8.

この様な構成において検出信号bは中間段ダイ
ノードDaから取出されているため、検出信号a
よりもレベルが小さい。説明を簡単にするため、
その比が例えば1/10になるようにダイノードD
aが選択されており、検出信号a,bのダイナミ
ツクレンジが0V〜10Vであつたとする。ここで選
択回路8は基準レベルとして1Vと10Vが設定され
ており、ゲート7の出力が10Vになると検出信号
bを取り出し、ゲート7の出力が1Vを下回ると
検出信号aを取り出すようにFETを制御する。
In such a configuration, since the detection signal b is taken out from the intermediate stage dynode D a , the detection signal a
The level is smaller than. To simplify the explanation,
Dynode D so that the ratio is, for example, 1/10.
Suppose that a is selected and the dynamic range of the detection signals a and b is 0V to 10V. Here, the selection circuit 8 is set to 1V and 10V as reference levels, and the FET is configured so that when the output of the gate 7 reaches 10V, the detection signal b is taken out, and when the output of the gate 7 falls below 1V, the detection signal a is taken out. Control.

そのため、検出信号aが選択されていて、その
検出信号aが増大して10Vに達して飽和してしま
つた場合、選択回路8はゲート7の出力が10Vに
達したことを検出して瞬時にゲート7を切換える
ため、ゲート7からは飽和していない検出信号b
が得られる。その後取り出された検出信号bが減
少し1Vを下回つた場合、選択回路8はゲート7
の出力が1Vを下回つたことを検出して瞬時にゲ
ート7を切換えるため、ゲートからはレベルが大
きい検出信号aが得られる。従つて第1図の例に
比べダイナミツクレンジが10倍に拡大されたこと
になる。しかも検出信号a,bは常に得られてお
り、それをゲートで切換えるので切換時間は極め
て短かく、1回の測定中に検出信号レベルに応じ
た切換を多数繰返しても影響がない。
Therefore, if the detection signal a is selected and the detection signal a increases and reaches 10V and becomes saturated, the selection circuit 8 detects that the output of the gate 7 reaches 10V and instantly Since gate 7 is switched, an unsaturated detection signal b is output from gate 7.
is obtained. When the detection signal b extracted after that decreases and falls below 1V, the selection circuit 8 selects the gate 7.
Since the gate 7 is switched instantaneously upon detecting that the output has fallen below 1V, a detection signal a with a high level is obtained from the gate. Therefore, the dynamic range is expanded 10 times compared to the example shown in FIG. Moreover, since the detection signals a and b are always obtained and are switched by the gate, the switching time is extremely short, and there is no effect even if the switching is repeated many times according to the detection signal level during one measurement.

尚上述した実施例では1つの中間段ダイノード
aにのみ電流検出増巾器を設けたが、それに限
らず2つあるいはそれ以上の中間段ダイノードに
電流検出増巾器を設け、各々の増巾器から得られ
る検出信号のうち飽和しないで最もレベルの大き
いものを選択するようにすれば良い。
In the embodiment described above, only one intermediate stage dynode D a is provided with a current detection amplifier, but the current detection amplifier is not limited to this, but two or more intermediate stage dynodes are provided with current detection amplifiers, and each amplifier Of the detection signals obtained from the detector, the one with the highest level without saturation may be selected.

又上述した実施例では選択回路8はゲート7の
出力レベルを判定するようにしたが、これに限ら
ずゲート7の前の段階で検出信号レベルを判定す
るようにしてもよい。ただしその場合は各検出信
号についてレベルを判定しなければならない。そ
の点第2図の実施例ではゲート7の出力レベルの
みを判定するだけでよい。
Further, in the above-described embodiment, the selection circuit 8 determines the output level of the gate 7, but the present invention is not limited to this, and the detection signal level may be determined at a stage before the gate 7. However, in that case, the level must be determined for each detection signal. In this respect, in the embodiment shown in FIG. 2, it is only necessary to determine the output level of the gate 7.

更に上述した実施例におけるゲート7及び選択
回路からなる選択手段はコンピユータに置きかえ
ることが可能である。
Furthermore, the selection means consisting of the gate 7 and the selection circuit in the above-described embodiment can be replaced with a computer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の構成図、第2図は本発明の一
実施例の構成図である。 D1〜Do:ダイノード、4,5:電流検出増巾
器、6:絶縁型直流増巾器、7:FETゲート、
8:選択回路。
FIG. 1 is a block diagram of a conventional example, and FIG. 2 is a block diagram of an embodiment of the present invention. D 1 to D o : dynode, 4, 5: current detection amplifier, 6: isolated DC amplifier, 7: FET gate,
8: Selection circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 複数段のダイノードと該ダイノードによつて
増倍された2次電子流を集める電子コレクタとを
有する2次電子増倍管と、上記ダイノードのうち
1つ又はそれ以上の個々のダイノードに流入する
電流を検出する手段と、該検出手段から得られる
1つ又はそれ以上の検出信号と前記電子コレクタ
から得られる検出信号を選択的に取り出す手段と
からなることを特徴とする2次電子増倍管を備え
た検出装置。
1. A secondary electron multiplier having a plurality of stages of dynodes and an electron collector that collects the secondary electron flow multiplied by the dynodes, and flowing into one or more individual dynodes of the dynodes. A secondary electron multiplier tube comprising means for detecting current, and means for selectively extracting one or more detection signals obtained from the detection means and the detection signal obtained from the electron collector. A detection device equipped with
JP423080A 1980-01-18 1980-01-18 Detection device provided with secondary electron multiplier Granted JPS56101581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP423080A JPS56101581A (en) 1980-01-18 1980-01-18 Detection device provided with secondary electron multiplier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP423080A JPS56101581A (en) 1980-01-18 1980-01-18 Detection device provided with secondary electron multiplier

Publications (2)

Publication Number Publication Date
JPS56101581A JPS56101581A (en) 1981-08-14
JPS6241377B2 true JPS6241377B2 (en) 1987-09-02

Family

ID=11578762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP423080A Granted JPS56101581A (en) 1980-01-18 1980-01-18 Detection device provided with secondary electron multiplier

Country Status (1)

Country Link
JP (1) JPS56101581A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187450U (en) * 1984-05-22 1985-12-12 日本電子株式会社 Secondary electron detection device for scanning electron microscope
US4631410A (en) * 1984-10-03 1986-12-23 Wisconsin Alumni Research Foundation Method and apparatus for measurement of radioactivity over an extended range
JP2014119282A (en) * 2012-12-13 2014-06-30 Fuji Electric Co Ltd Linearity-compensating bleeder circuit and radiation detector
JP6417139B2 (en) * 2014-07-18 2018-10-31 浜松ホトニクス株式会社 Output circuit for electron multiplier

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5343068U (en) * 1976-09-18 1978-04-13

Also Published As

Publication number Publication date
JPS56101581A (en) 1981-08-14

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