JPS6244396B2 - - Google Patents
Info
- Publication number
- JPS6244396B2 JPS6244396B2 JP56132840A JP13284081A JPS6244396B2 JP S6244396 B2 JPS6244396 B2 JP S6244396B2 JP 56132840 A JP56132840 A JP 56132840A JP 13284081 A JP13284081 A JP 13284081A JP S6244396 B2 JPS6244396 B2 JP S6244396B2
- Authority
- JP
- Japan
- Prior art keywords
- heating chamber
- heated
- heating
- wall surface
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Constitution Of High-Frequency Heating (AREA)
Description
【発明の詳細な説明】
本発明は食品等に高周波を照射し、加熱する高
周波加熱装置に関するものであり、特にセンター
給電方式における均一加熱構成に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-frequency heating device that heats foods by irradiating high-frequency waves to foods, and particularly relates to a uniform heating configuration in a center feeding system.
従来の例えば第1図および第2図に示すこの種
の高周波加熱装置においては、加熱室1内の底壁
面2には、食品等の被加熱物3を載置する。皿受
台4が着脱自在に設けられている。 In a conventional high-frequency heating apparatus of this kind shown in FIGS. 1 and 2, for example, an object to be heated 3 such as food is placed on a bottom wall surface 2 in a heating chamber 1. A plate holder 4 is provided in a detachable manner.
高周波はマグネトロン5より導波管6を介して
加熱室1内に給電され、加熱室1内に発生する電
界パターンの強弱の差を小さくするためにスタラ
ー羽根7により電波の撹拌が行なわれている。仕
切板8は高周波を吸収しにくい材料、例えばシリ
コン含浸ガラスよりなり、スタラー羽根7と被加
熱物3とを隔離する。第2図において、マグネト
ロン5等の電気部品を冷却する冷却フアン9によ
り発生する矢印の風は、加熱室1の壁面に設けら
れた流入用開口部10より加熱室1内へ入いり、
スタラー羽根7を回転させた後、加熱室1の壁面
に設けられた排気用開口部11より装置外へ排出
される。 High frequency waves are fed into the heating chamber 1 from a magnetron 5 through a waveguide 6, and the radio waves are stirred by stirrer blades 7 in order to reduce the difference in strength of the electric field pattern generated within the heating chamber 1. . The partition plate 8 is made of a material that does not easily absorb high frequencies, such as silicon-impregnated glass, and isolates the stirrer blade 7 and the object 3 to be heated. In FIG. 2, the wind generated by the cooling fan 9 that cools the magnetron 5 and other electrical components enters the heating chamber 1 through the inflow opening 10 provided on the wall of the heating chamber 1.
After rotating the stirrer blades 7, the air is discharged out of the apparatus through an exhaust opening 11 provided on the wall of the heating chamber 1.
このスタラー羽根7は加熱室1内の高周波電波
を撹拌しているのであるが、被加熱物3の大きさ
及び形状によつて、局部的に過熱されたり、加熱
不足であつたりする。いわゆる加熱むらが発生し
ていた。つまり被加熱物が無い場合や極端に被加
熱物3が小さい場合は、電界パターンの強弱の差
が少なく、従つて加熱むらが少ないが被加熱物3
が大きい程、あるいは平面面積の大きくうすいも
のほど電界パターンの強弱による加熱むらは大き
くなる。この加熱むらについては基本的な解明が
されておらず、どのタイプの高周波加熱装置にあ
つてもこの加熱むらを解消する共通的な構成が判
明されていないのが現状である。しかし加熱むら
の要因としては、加熱室1の寸法、形状および導
波管6の給電口12の形状ならびに加熱室1の底
壁面2形状などが主要因になつていると考えられ
る。そこでこの加熱むらを解消させる構成として
一般的には加熱室1の壁面、特に底壁面2の形状
をある形状に絞り加工することにより、電界パタ
ーンを変化させるものが考えられている。この構
成の一例として第3図のように底壁面2を寸法H
だけ絞り加工し、皿受台4の底面下部に空間部を
設ける。この例では、電界パターン上、実質的に
は皿受台4の被加熱物3を宙に浮かせたと同じ効
果となり、皿受台4の中央下部にも高周波電波が
回り込み、被加熱物3に均一に高周波電波を照射
する事が知られている。ところがこの構成の場
合、高さのある被加熱物、例えばじやがいもなど
では、下の方ばかりが加熱されて上の方が加熱さ
れにくかつたり、平たく大きい被加熱物、例えば
パツクに入つたままの冷凍えびなどでは中央部ば
かりが加熱されたりするという欠点があつた。 The stirrer blades 7 stir the high-frequency radio waves in the heating chamber 1, but depending on the size and shape of the object 3 to be heated, it may be locally overheated or underheated. So-called uneven heating occurred. In other words, when there is no object to be heated or when the object to be heated 3 is extremely small, there is little difference in the strength of the electric field pattern, and therefore there is little uneven heating, but the object to be heated 3
The larger the surface area, or the larger and thinner the plane area, the greater the heating unevenness due to the strength of the electric field pattern. This heating unevenness has not been fundamentally elucidated, and at present no common configuration for eliminating this heating unevenness has been found for any type of high-frequency heating device. However, it is considered that the main factors contributing to the uneven heating are the dimensions and shape of the heating chamber 1, the shape of the power supply port 12 of the waveguide 6, the shape of the bottom wall surface 2 of the heating chamber 1, and the like. Therefore, as a structure for eliminating this heating unevenness, it is generally considered that the electric field pattern is changed by drawing the wall surface of the heating chamber 1, particularly the bottom wall surface 2, into a certain shape. As an example of this configuration, the bottom wall surface 2 has a dimension H as shown in FIG.
A space is provided in the lower part of the bottom of the plate holder 4 by drawing. In this example, due to the electric field pattern, the effect is essentially the same as if the object to be heated 3 on the plate pedestal 4 were suspended in the air, and the high-frequency radio waves also wrap around the lower center of the plate holder 4, uniformly covering the object 3 to be heated. It is known that high-frequency radio waves can be irradiated to However, with this configuration, when it comes to tall objects to be heated, such as beans or potatoes, only the bottom part of the object is heated, making it difficult to heat the top. Frozen shrimp, etc., had the disadvantage that only the center part was heated.
つまり第3図の構成の場合、皿受台4の中央部
の下部に電界が集中してしまい被加熱物3の種類
によつては前述のような加熱むらが生じていた。 In other words, in the case of the configuration shown in FIG. 3, the electric field is concentrated at the lower central portion of the tray holder 4, and depending on the type of the object to be heated 3, uneven heating as described above occurs.
本発明は前記従来の欠点を解消することを目的
とする。 The present invention aims to eliminate the above-mentioned conventional drawbacks.
本発明は、加熱室の底壁面の中央部に皿受台側
に突出する突出部を形成する構成で皿受台下面の
電界強さを均一化し、被加熱物の形状、大きさ等
による加熱むらを解消するものである。 The present invention has a configuration in which a protrusion that protrudes toward the pan holder side is formed in the center of the bottom wall of the heating chamber, so that the electric field strength on the bottom surface of the pan holder can be made uniform, and heating can be achieved depending on the shape, size, etc. of the object to be heated. This eliminates unevenness.
以下、本発明の一実施例について、図面にもと
づき説明する。 An embodiment of the present invention will be described below based on the drawings.
第4図および第5図において、センター給電方
式の高周波加熱装置を示す。マグネトロン5から
導波管6を通り、給電口12より高周波電波が加
熱室1内にスタラー羽根7で撹拌されつつ供給さ
れる。前記給電口12は加熱室1のほぼ中心と同
軸上に位置する。加熱室1の底壁面2は皿受台4
を載置する台座部13を側壁面に沿つて外周縁に
形成している。また加熱室1の中心部には皿受台
4の下部に距離l1を置いて直径φdの突出部14
加熱室1の底壁面2に一体成形する。さらにこの
突出部14と前記台座部13との間には皿受台4
と距離l2を置いて凹部15を形成する。前記距離
l1はl2より小さいものとなつている。前記直径φ
dは本実施例では加熱室1の幅寸法Lの約1/3
程としている。この直径φdの寸法は厳密には被
加熱物3の種類および加熱室1の大きさ、形状等
によつて実験的に求めることが最も望ましいが現
実的にはスポンジケーキ等を基本として妥当な数
値を選択する。 In FIGS. 4 and 5, a center feeding type high frequency heating device is shown. High-frequency radio waves are supplied from the magnetron 5 through the waveguide 6 into the heating chamber 1 from the power supply port 12 while being stirred by the stirrer blades 7 . The power supply port 12 is located substantially coaxially with the center of the heating chamber 1. The bottom wall surface 2 of the heating chamber 1 is a plate holder 4
A pedestal portion 13 on which the holder is placed is formed at the outer peripheral edge along the side wall surface. In addition, in the center of the heating chamber 1, a protrusion 14 with a diameter φd is placed at a distance l 1 from the bottom of the dish holder 4.
It is integrally molded on the bottom wall surface 2 of the heating chamber 1. Further, between this protruding portion 14 and the pedestal portion 13, a tray holder 4 is provided.
A recessed portion 15 is formed at a distance l 2 . said distance
l 1 is smaller than l 2 . The diameter φ
In this embodiment, d is approximately 1/3 of the width L of the heating chamber 1.
I'm in moderation. Strictly speaking, it is most desirable to determine the diameter φd experimentally depending on the type of the object to be heated 3 and the size and shape of the heating chamber 1, but in reality, it is a reasonable value based on sponge cake, etc. Select.
また、本実施例の第5図に示すように円形状に
限定する必要はなく正方形状でもよい。 Further, as shown in FIG. 5 of this embodiment, it is not necessary to limit the shape to a circle, and it may be a square shape.
前記の構成においては、給電口12より供給さ
れる高周波は、仕切板8を透過し被加熱物3に直
接吸収されるもの、あるいは加熱室1の壁面に反
射したのち被加熱物3へ吸収されるものなどがあ
る。 In the above configuration, the high frequency supplied from the power supply port 12 is transmitted through the partition plate 8 and directly absorbed by the object to be heated 3, or is reflected on the wall surface of the heating chamber 1 and then absorbed by the object to be heated 3. There are things like that.
特に底壁面2を突出部14と凹部15とに高低
差をつけて形成したことから突出部14に対応す
る皿受台4の中央部に高周波が集中せず、被加熱
物3に均一に高周波を照射することが可能であ
る。 In particular, since the bottom wall surface 2 is formed with a height difference between the protruding part 14 and the recessed part 15, the high frequency is not concentrated in the center part of the dish pedestal 4 corresponding to the protruding part 14, and the high frequency is uniformly applied to the heated object 3. It is possible to irradiate.
従つて被加熱物3の種類および形状による加熱
むらが減少し、特に高さのある被加熱物において
底部ばかりが過加熱されることがなくなり、また
平たい大きな被加熱物における中央部の過加熱状
態を解消することができた。この理由としては、
突出部14部分によつて加熱室1内、特に加熱室
底面の電波の反射が変わることにより、被加熱物
3を皿受台4に載置した場合の電界パターンの
「強」部分が皿受台4の中央部よりも高い位置に
移動し、その分前記中央部への高周波の集中化が
減少し、皿受台4の下面全面に平均化するものと
考えられる。 Therefore, uneven heating due to the type and shape of the heated object 3 is reduced, and in particular, the bottom part of a tall object will not be overheated, and the central part of a flat and large object will not be overheated. I was able to resolve the issue. The reason for this is
The protrusion 14 changes the reflection of radio waves inside the heating chamber 1, especially on the bottom of the heating chamber, so that when the object to be heated 3 is placed on the pan holder 4, the "strong" part of the electric field pattern is It is thought that by moving to a higher position than the center of the table 4, the concentration of high frequencies in the center is reduced and is averaged over the entire lower surface of the tray holder 4.
以上のように本発明は、加熱室の底壁面の形状
を変えることにより、皿受台の下部の電界強度を
平均化し被加熱物の種類、大きさ、形状等による
加熱むらを減少して調理仕上りのすぐれた高周波
加熱装置を提供できるものである。さらに加熱室
の形状、寸法に対応して突出部の高さ及び位置を
種々変えることにより種々の容量の高周波加熱装
置に適応できるもので、新規な部品を加えること
なく簡潔な構成によつて調理性能を向上すること
ができるなどの効果を奏するものである。その上
突出部は加熱室底面に一体形成できるものであ
り、生産性にも優れ、突出部が移動することもな
いため安定した効果が得られる。 As described above, by changing the shape of the bottom wall surface of the heating chamber, the present invention averages the electric field strength at the bottom of the dish holder and reduces uneven heating due to the type, size, shape, etc. of the object to be heated. It is possible to provide a high-frequency heating device with an excellent finish. Furthermore, by changing the height and position of the protruding part in accordance with the shape and dimensions of the heating chamber, it can be adapted to high-frequency heating devices of various capacities, and the simple structure allows cooking without adding new parts. This has effects such as improved performance. Moreover, the protrusion can be integrally formed on the bottom surface of the heating chamber, which provides excellent productivity, and since the protrusion does not move, a stable effect can be obtained.
第1図は従来の高周波加熱装置の正面断面図、
第2図は同一部を切截した平面図、第3図は他の
従来例を示す高周波加熱装置の正面断面図、第4
図は本発明の一実施例である高周波加熱装置の正
面断面図、第5図は同一部を切截した加熱室底壁
面の平面図である。
1……加熱室、2……底壁面、3……被加熱
物、4……皿受台、5……マグネトロン、7……
スタラー羽根、12……給電口、13……台座
部、14……突出部、15……凹部。
Figure 1 is a front sectional view of a conventional high-frequency heating device.
Fig. 2 is a cutaway plan view of the same part, Fig. 3 is a front cross-sectional view of another conventional high-frequency heating device, and Fig. 4 is a cutaway plan view of the same part.
The figure is a front cross-sectional view of a high-frequency heating device according to an embodiment of the present invention, and FIG. 5 is a partially cutaway plan view of the bottom wall of the heating chamber. 1...Heating chamber, 2...Bottom wall surface, 3...Object to be heated, 4...Dish pedestal, 5...Magnetron, 7...
Stirrer blade, 12... Power supply port, 13... Pedestal part, 14... Protrusion part, 15... Recessed part.
Claims (1)
部にあつて前記被加熱物を載置する皿受台と、前
記加熱室内へ高周波電波を給電するマグネトロン
と、前記マグネトロンからの高周波電波を撹拌す
るスタラー羽根とを備え、前記皿受台の下部に位
置する加熱室底壁面のほぼ中央部に前記皿受台に
近接する突出部を設けるとともに前記皿受台を保
持する台座部を底壁面周縁に設ける構成とし、前
記突出部は加熱室底壁面に一体成形されてなる高
周波加熱装置。 2 加熱室の中心線と、スタラー羽根および突出
部の中心線とをほぼ同軸に構成した特許請求の範
囲第1項記載の高周波加熱装置。[Scope of Claims] 1. A heating chamber for storing an object to be heated, a dish pedestal on the bottom of the heating chamber on which the object to be heated is placed, a magnetron for feeding high-frequency radio waves into the heating chamber; A stirrer blade for stirring high-frequency radio waves from a magnetron is provided, and a protrusion close to the dish pedestal is provided at approximately the center of the bottom wall surface of the heating chamber located below the dish pedestal, and also holds the dish pedestal. The high-frequency heating device has a configuration in which a pedestal portion is provided on the periphery of the bottom wall surface, and the protrusion portion is integrally molded on the bottom wall surface of the heating chamber. 2. The high-frequency heating device according to claim 1, wherein the center line of the heating chamber and the center lines of the stirrer blades and the protrusion are substantially coaxial.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56132840A JPS5834589A (en) | 1981-08-25 | 1981-08-25 | High frequency heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56132840A JPS5834589A (en) | 1981-08-25 | 1981-08-25 | High frequency heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5834589A JPS5834589A (en) | 1983-03-01 |
| JPS6244396B2 true JPS6244396B2 (en) | 1987-09-19 |
Family
ID=15090741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56132840A Granted JPS5834589A (en) | 1981-08-25 | 1981-08-25 | High frequency heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834589A (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5430676Y2 (en) * | 1974-03-01 | 1979-09-26 | ||
| JPS5210939A (en) * | 1975-07-16 | 1977-01-27 | Matsushita Electric Ind Co Ltd | High frequency heating device |
| JPS5714394Y2 (en) * | 1976-03-31 | 1982-03-24 | ||
| JPS585842Y2 (en) * | 1977-02-21 | 1983-02-01 | シャープ株式会社 | microwave oven |
| JPS53117649U (en) * | 1977-02-25 | 1978-09-19 |
-
1981
- 1981-08-25 JP JP56132840A patent/JPS5834589A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5834589A (en) | 1983-03-01 |
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