JPS6245833B2 - - Google Patents
Info
- Publication number
- JPS6245833B2 JPS6245833B2 JP55080156A JP8015680A JPS6245833B2 JP S6245833 B2 JPS6245833 B2 JP S6245833B2 JP 55080156 A JP55080156 A JP 55080156A JP 8015680 A JP8015680 A JP 8015680A JP S6245833 B2 JPS6245833 B2 JP S6245833B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- mark
- mold release
- flame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/08—Surface shaping of articles, e.g. embossing; Apparatus therefor by flame treatment ; using hot gases
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
Landscapes
- Duplication Or Marking (AREA)
Description
【発明の詳細な説明】
本発明は樹脂封止半導体装置のマーキング方法
に関するもので、詳しくは樹脂封止半導体装置の
表面にマークを捺印するに当つて、前処理として
行なう半導体装置の表面の洗浄方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for marking a resin-sealed semiconductor device, and more specifically, the present invention relates to a method for marking a resin-sealed semiconductor device, and more specifically, cleaning of the surface of the semiconductor device as a pretreatment before marking a mark on the surface of the resin-sealed semiconductor device. It is about the method.
従来、エポキシ樹脂等によつて封止された半導
体装置の表面にマークを捺印する場合には、マー
クと樹脂との密着強度を高めるために、表面の汚
れ、特に油脂分を取り除く前処理が行なわれてい
る。このような前処理方法としては、有機溶剤に
よる洗浄、研磨材含浸ブラシによるブラツシン
グ、研磨材によるホーニング等がある。 Conventionally, when marking a mark on the surface of a semiconductor device sealed with epoxy resin or the like, pretreatment is performed to remove dirt, especially oil and fat, from the surface in order to increase the adhesion strength between the mark and the resin. It is. Examples of such pretreatment methods include cleaning with an organic solvent, brushing with an abrasive-impregnated brush, and honing with an abrasive.
ところが、最近は、難燃化など樹脂材料の改良
に伴い、モールドされた樹脂が金型から抜け難く
なり、その対策として種々の離型剤が工夫され、
これを樹脂材料内に含入させている。したがつ
て、モールドプレスによる樹脂封止の際に、この
離型剤が表面に滲み出し、そのため従来の前処理
方法ではホーニングを除き、十分な前処理効果が
得られず、マークインクと封止樹脂表面の密着強
度が著しく低下するという新たな欠点を生じてい
る。またホーニングによる処理は、樹脂表面を粗
らし、離型剤を一部除去することも可能である
が、樹脂表面とリード部を極端に粗らし、商品価
値を落すばかりか、リード強度も低下させるとい
う欠点があつた。 However, recently, with the improvement of resin materials such as flame retardancy, it becomes difficult for the molded resin to come out of the mold, and various mold release agents have been devised as a countermeasure.
This is incorporated into the resin material. Therefore, when resin sealing is performed using a mold press, this mold release agent oozes out onto the surface, and as a result, conventional pretreatment methods, except for honing, do not provide sufficient pretreatment effects, and the mark ink and sealing A new drawback arises in that the adhesion strength of the resin surface is significantly reduced. In addition, honing treatment can roughen the resin surface and remove some of the mold release agent, but it also extremely roughens the resin surface and lead portion, reducing not only the product value but also lead strength. There was a drawback.
本発明はこの様な欠点を解決するため、樹脂封
止半導体装置の樹脂表面にマークを捺印するに当
り、前もつて樹脂表面を、該表面の外観状態を維
持する範囲内の高温の火焔で熱処理することによ
り、樹脂表面の離型剤を燃やし、もつてマークイ
ンクと封止樹脂表面の密着強度を増大させるよう
にしたものである。 In order to solve these drawbacks, the present invention has been developed by first heating the resin surface with a flame at a temperature within a range that maintains the appearance of the surface before imprinting a mark on the resin surface of a resin-sealed semiconductor device. The heat treatment burns the mold release agent on the resin surface, thereby increasing the adhesion strength between the mark ink and the sealing resin surface.
以下本発明の方法を実施例によつて説明する。 The method of the present invention will be explained below with reference to Examples.
実施例
エポキシ樹脂で封止した半導体装置の樹脂表面
に水素ガスの燃焼火焔を以下の条件によつて当
て、樹脂表面の離型剤を燃やして除去した。すな
わち、内径0.1〜0.3mmのバーナより５〜10／Hr
の水素ガスを出し、半導体装置表面に対して45゜
傾斜させ、バーナ先端から垂直距離で10mm位離
し、５〜15mm／secの速さで線状に連続移動させ
た。その際、前処理される巾は５〜10mmである。
なお、この条件下での火焔の温度は、バーナ先端
から10mmの位置で600〜800℃である。Example A combustion flame of hydrogen gas was applied to the resin surface of a semiconductor device sealed with epoxy resin under the following conditions to burn and remove the mold release agent on the resin surface. That is, 5 to 10/Hr from a burner with an inner diameter of 0.1 to 0.3 mm.
hydrogen gas was emitted, the burner was tilted at 45° to the surface of the semiconductor device, and the burner was moved continuously in a linear manner at a speed of 5 to 15 mm/sec at a vertical distance of about 10 mm from the tip of the burner. At that time, the width to be pretreated is 5 to 10 mm.
Note that the temperature of the flame under these conditions is 600 to 800°C at a position 10 mm from the tip of the burner.
離型剤は一般にＣ、Ｈ、Ｏ、Ｎ等からなり、こ
れを水素ガスの火焔で燃やすことにより、それら
はCO2、H2O等になつて飛ばされる。したがつて
マークの密着強度低下の要因となつていた物質は
除去されることとなり、マークインクは、直接活
性化されたエポキシ樹脂表面と接着することにな
り、極めて強固なマークが得られる。 Mold release agents generally consist of C, H, O, N, etc., and by burning them with a hydrogen gas flame, they are blown off as CO 2 , H 2 O, etc. Therefore, the substance that caused the decrease in adhesion strength of the mark is removed, and the mark ink directly adheres to the activated epoxy resin surface, resulting in an extremely strong mark.
なお、上記実施例では、熱処理を水素ガスの火
焔によつて行なつたが、燃焼ガスは水素とは限ら
ず、燃焼による煤の発生の少ないガスならば利用
できる。また、離型剤の種類によつて処理条件が
異る場合もあるので、表面に対しての火焔の角
度、バーナ先端からの距離、移動速度、バーナの
内径および噴射速度等の条件を適宜変更する必要
がある。なお、この処理は充分に酸素供給された
雰囲気内で行なうことが好ましい。また危険は伴
なうが、水素と酸素を予混合したガスを上記と同
じ条件で燃焼させて処理した場合は、水素のみの
場合よりもマーク密着強度が強くなるという結果
を得た。 In the above embodiment, the heat treatment was performed using a hydrogen gas flame, but the combustion gas is not limited to hydrogen, and any gas that produces less soot due to combustion may be used. In addition, processing conditions may differ depending on the type of mold release agent, so conditions such as the angle of the flame relative to the surface, distance from the burner tip, moving speed, inner diameter of the burner, and injection speed may be changed as appropriate. There is a need to. Note that this treatment is preferably performed in an atmosphere sufficiently supplied with oxygen. Furthermore, although it is risky, when a premixed gas of hydrogen and oxygen is burned under the same conditions as above, the mark adhesion strength is stronger than when hydrogen is used alone.
以上説明した如く、本発明に係る樹脂封止半導
体装置のマーキング方法は、前処理として樹脂表
面をガス燃焼による高温火焔で熱処理を行なうの
で、短時間で完全に離型剤の除去が行なえ、それ
によつて強いマーク密着強度を得ることができ
る。 As explained above, in the method for marking a resin-sealed semiconductor device according to the present invention, the resin surface is heat-treated with a high-temperature flame using gas combustion as a pretreatment, so that the mold release agent can be completely removed in a short period of time. As a result, strong mark adhesion strength can be obtained.
Claims (1)
るに当り、その以前に上記半導体装置の表面の離
型剤を、該装置の樹脂表面の外観状態を維持する
範囲内の熱量で燃焼させることを特徴とする樹脂
封止半導体装置のマーキング方法。1. Before imprinting a mark on the surface of a resin-sealed semiconductor device, the mold release agent on the surface of the semiconductor device must be burned at a heat level that maintains the appearance of the resin surface of the device. Characteristic marking method for resin-sealed semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8015680A JPS577142A (en) | 1980-06-16 | 1980-06-16 | Marking method of resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8015680A JPS577142A (en) | 1980-06-16 | 1980-06-16 | Marking method of resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577142A JPS577142A (en) | 1982-01-14 |
| JPS6245833B2 true JPS6245833B2 (en) | 1987-09-29 |
Family
ID=13710431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8015680A Granted JPS577142A (en) | 1980-06-16 | 1980-06-16 | Marking method of resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577142A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178142A (en) * | 1984-09-25 | 1986-04-21 | Sanyo Electric Co Ltd | Printing for molded semiconductor device |
| JPH074995B2 (en) * | 1986-05-20 | 1995-01-25 | 株式会社東芝 | IC card and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54140463A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Process method for resin-sealed semiconductor device |
-
1980
- 1980-06-16 JP JP8015680A patent/JPS577142A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577142A (en) | 1982-01-14 |
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