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JPS6246061B2 - - Google Patents
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JPS6246061B2 - - Google Patents

Info

Publication number
JPS6246061B2
JPS6246061B2 JP58103482A JP10348283A JPS6246061B2 JP S6246061 B2 JPS6246061 B2 JP S6246061B2 JP 58103482 A JP58103482 A JP 58103482A JP 10348283 A JP10348283 A JP 10348283A JP S6246061 B2 JPS6246061 B2 JP S6246061B2
Authority
JP
Japan
Prior art keywords
pad
electrode pad
main electrode
auxiliary
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58103482A
Other languages
Japanese (ja)
Other versions
JPS59228730A (en
Inventor
Isamu Odaka
Haruo Yoshikyo
Katsuhiko Aoki
Yasuo Tazo
Norifumi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58103482A priority Critical patent/JPS59228730A/en
Publication of JPS59228730A publication Critical patent/JPS59228730A/en
Publication of JPS6246061B2 publication Critical patent/JPS6246061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、被測定チツプ又はウエハ上の集積回
路の、本来の駆動時に使用するソルダバンプに損
傷を与えることなく回路の検査及び試検を行なう
ことが可能な補助パツドをもうけた電極パツドに
関するものである。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention is directed to the inspection and trial testing of integrated circuits on chips or wafers without damaging the solder bumps used during the original driving of the chips or wafers to be measured. This invention relates to an electrode pad that has an auxiliary pad that can be used.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

極低温で動作するジヨセフソン素子は従来のシ
リコン素子と比較してスイツチング速度がきわめ
て高速であること、低消費電力であることから近
年注目され、集積化も進んでいる。ジヨセフソン
集積回路では、信号が極めて高速であるため、ワ
イヤボンデイング等の実装方法を用いることがで
きず、寄生インダクタンス等が小さい実装方法が
必要とされる。この目的のため、低融点はんだを
微小球にして、チツプ又はウエハと外部配線基板
間とを接続する、言わゆるフリツプチツプボンデ
イング法が適している。
Josephson devices that operate at extremely low temperatures have attracted attention in recent years because of their extremely high switching speed and low power consumption compared to conventional silicon devices, and their integration is progressing. In Josephson integrated circuits, since signals are extremely high-speed, mounting methods such as wire bonding cannot be used, and a mounting method with low parasitic inductance is required. For this purpose, the so-called flip-chip bonding method is suitable, in which microspheres of low-melting point solder are used to connect a chip or wafer to an external wiring board.

第1図はフリツプチツプボンデイング用のジヨ
セフソン集積回路用チツプに使用している基本的
なパツド部の構造である。その形成方法はまずシ
リコンウエハ1に主電極パツド2を島状に形成す
る。つぎに絶縁層3−1を蒸着し、その上から配
線4を主電極パツド2に接続するように形成す
る。その上から絶縁層3−2を蒸着し、さらにパ
ツド部2とはんだすなわちソルダバンプ6との密
着性を高めるために中間金属5を蒸着した後に、
ソルダバンプ6を形成する。
FIG. 1 shows the basic structure of a pad used in Josephson integrated circuit chips for flip-chip bonding. The method for forming the main electrode pad 2 is to first form the main electrode pad 2 in the form of an island on the silicon wafer 1. Next, an insulating layer 3-1 is deposited, and a wiring 4 is formed on the insulating layer 3-1 so as to be connected to the main electrode pad 2. After depositing an insulating layer 3-2 thereon and further depositing an intermediate metal 5 to improve the adhesion between the pad portion 2 and the solder, that is, the solder bump 6,
Solder bumps 6 are formed.

次に、チツプ状に切り出したあるいは、チツプ
を切り離さずに、ウエハ状態で被測定チツプ9の
動作試験又は検査を行う方法について述べる。チ
ツプ状に切り離した場合を例として説明する。第
2図に一例を示すように切り出した被測定チツプ
9をサンプルホルダ7に納め、被測定チツプ9の
ソルダバンプ6とサンプルホルダ7のバネ8とを
接触させ液体ヘリウムに浸け信号の入出力を行
う。この方法による欠点は、圧力10を加えて接
触を得るときに、ソルダ材質の機械的強度が弱い
ため、ソルダバンプ6が欠損を受けたり、極端な
場合には剥離してしまう問題がある。この結果、
第3図に示すように、本来の回路駆動時におい
て、チツプと配線基板を接続させるため、ソルダ
を立体的に変形する目的でチツプを加熱溶融さ
せ、表面張力を利用してソルダ層を立体化して、
配線基板にボンデイングする場合、検査段階にお
ける各パツドのソルダの欠損が一定でないため、
各ソルダバンプの高さが揃わなくなり、検査段階
でソルダが欠損したところは、対向する配線基板
のパツドと接続できなくなる。
Next, a method of performing an operation test or inspection of the chip 9 to be measured in a wafer state without cutting it into chips or cutting the chip will be described. An example in which the film is cut into chips will be explained. As an example is shown in FIG. 2, the cut out chip 9 to be measured is placed in the sample holder 7, the solder bumps 6 of the chip 9 to be measured are brought into contact with the spring 8 of the sample holder 7, and the chip is immersed in liquid helium to input and output signals. . The disadvantage of this method is that when a pressure 10 is applied to obtain contact, the solder bumps 6 may be damaged or, in extreme cases, may peel off due to the weak mechanical strength of the solder material. As a result,
As shown in Figure 3, in order to connect the chip and the wiring board during the original circuit drive, the chip is heated and melted to deform the solder three-dimensionally, and the solder layer is made three-dimensional using surface tension. hand,
When bonding to a wiring board, the loss of solder on each pad during the inspection stage is not constant, so
The heights of the solder bumps are no longer the same, and areas where solder is missing during the inspection stage cannot be connected to pads on the opposing wiring board.

〔発明の目的〕[Purpose of the invention]

本発明はこの欠点を解決するため、主電極パツ
ドのほかに、検査、または動作試験の時にのみ使
用する補助パツドを併設したものである。また、
ソルダによつて主電極パツドと補助パツドを連結
していることを特徴とし、その目的は検査時に
は、主電極パツドの信号を、うすいソルダ層によ
つて連結された補助パツドに検査端子を触れて検
査し、すなわち主電極パツド上のソルダに損傷を
与えないで試験を行ない、試験終了後、ソルダを
加熱により立体化して、配線基板との接続を行う
場合には主電極パツドと補助パツドとを分離し、
寄生インダクタンス等を低減化して伝送特性上の
悪影響を与えないことにある。
In order to solve this drawback, the present invention provides, in addition to the main electrode pad, an auxiliary pad that is used only during inspections or operation tests. Also,
It is characterized by connecting the main electrode pad and the auxiliary pad with solder, and its purpose is to transfer the signal of the main electrode pad to the auxiliary pad connected by a thin layer of solder during inspection by touching the test terminal. In other words, when testing is performed without damaging the solder on the main electrode pad, and after the test is completed, the solder is heated to make it three-dimensional, and when connecting to the wiring board, the main electrode pad and auxiliary pad are separate,
The purpose is to reduce parasitic inductance and the like so that it does not have an adverse effect on transmission characteristics.

〔発明の実施例〕[Embodiments of the invention]

第4図、第5図は本発明の一実施例であつて、
2はチツプ上の主電極パツド、3−1,3−2は
絶縁層、4は配線、5はいわゆる低融点はんだ材
料の金属と密着性を有する領域を形成する中間金
属、6は例えばIn−Bi−Snの共晶合金又は他のIn
を含有する金属、又は鉛を含有する金属等の低融
点はんだ材層のソルダバンプ、11は補助パツ
ド、12は配線基板、13は配線基板上の主電極
パツドである。
FIGS. 4 and 5 show an embodiment of the present invention,
2 is the main electrode pad on the chip, 3-1 and 3-2 are insulating layers, 4 is wiring, 5 is an intermediate metal that forms a region that has adhesiveness with the metal of the so-called low melting point solder material, and 6 is, for example, In- Bi-Sn eutectic alloy or other In
11 is an auxiliary pad, 12 is a wiring board, and 13 is a main electrode pad on the wiring board.

第4図aは被測定チツプ9上の主電極パツド2
と補助パツド11をソルダバンプ6によつて連結
した断面構造図を示す。同図bはその平面図であ
る。主電極パツド2と補助パツド11とを連結す
る部分のソルダバンプ6には、中間金属5を設け
ないで絶縁層との密着性を悪くし、かつ中部が細
くくびれた平面形状をしているため加熱によるソ
ルダボンデイング工程すなわち、膜状のソルダを
立体状に変形する工程後の分離を容易にする。検
査は以下の手順で行なう。すなわち主電極パツド
と補助パツドが連結された状態で被測定チツプ9
をサンプルホルダ7に納める。サンプルホルダ7
のバネ8は補助パツド11上のソルダ部と接触さ
せ、回路動作試験を行う。
Figure 4a shows the main electrode pad 2 on the chip 9 to be measured.
A cross-sectional structural diagram of the auxiliary pad 11 and the auxiliary pad 11 connected by the solder bump 6 is shown. Figure b is a plan view thereof. The solder bump 6 connecting the main electrode pad 2 and the auxiliary pad 11 is not provided with the intermediate metal 5 to reduce adhesion with the insulating layer, and has a flat shape with a narrow and constricted middle part, so it is heated. This facilitates separation after the solder bonding process, that is, the process of transforming the film-like solder into a three-dimensional shape. The inspection will be performed using the following steps. In other words, the chip 9 to be measured is connected with the main electrode pad and the auxiliary pad.
is placed in the sample holder 7. Sample holder 7
The spring 8 is brought into contact with the solder portion on the auxiliary pad 11, and a circuit operation test is performed.

次に、動作試験を行つて選別した被測定チツプ
9は、第5図に示すように配線基板12と各々の
主電極パツド2,13と相互の位置合せを行い、
加熱によるソルダボンデイングを行う。このとき
動作試験を行つた被測定チツプ9の補助パツド1
1上のソルダ量は、バネの接触によつて欠損して
いるため、ソルダボンデイングされた主電極パツ
ド同志のソルダに比べて小さく、このため半球状
になり、配線基板12には接触しない。なお、欠
損が少なく、基板12に接触しても、接触部には
絶縁層3−1,3−2があるので、接触したとし
ても何ら影響はない。また被測定チツプ9上の主
電極パツド2と補助パツド11とを連結している
ソルダ部分は、ソルダと密着性のある中間金属5
を付けていないため、各パツド部の方に分離、融
合され、その部分にはソルダが残らない、したが
つて、ソルダボンデイング後には、主電極パツド
2と補助パツド11は電気的に分離される。従つ
て、補助パツドの伝送特性上への悪影響は全くな
く、高速信号伝送に適した寄生インダクタンスの
極めて小さなチツプの実装法が可能となる。
Next, the chip 9 to be measured that has been selected through the operation test is aligned with the wiring board 12 and each of the main electrode pads 2 and 13, as shown in FIG.
Perform solder bonding by heating. At this time, the auxiliary pad 1 of the chip 9 under test was subjected to the operation test.
Since the amount of solder on the main electrode pads 1 is lost due to the contact of the spring, it is smaller than the solder on the main electrode pads that are solder bonded together, and therefore has a hemispherical shape and does not contact the wiring board 12. Note that there are few defects, and even if it contacts the substrate 12, there is no influence at all even if it contacts because the insulating layers 3-1 and 3-2 are present at the contact portion. In addition, the solder portion connecting the main electrode pad 2 and the auxiliary pad 11 on the chip 9 to be measured is connected to an intermediate metal 5 that is in close contact with the solder.
Since the pads are not attached, they are separated and fused to each pad part, and no solder remains in that part. Therefore, after solder bonding, the main electrode pad 2 and the auxiliary pad 11 are electrically separated. . Therefore, there is no adverse effect on the transmission characteristics of the auxiliary pad, and it becomes possible to mount a chip with extremely small parasitic inductance suitable for high-speed signal transmission.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、主電極パツド
と動作試験又は、チツプ検査に専用に用いる補助
パツドを一対として用い、試験又は検査時におい
ては、ソルダ材層によつて主電極パツドと補助パ
ツドを連結した状態で、補助パツド面上のみを検
査端子と接触させて動作試験を行なう。この際、
補助パツド面上のソルダが欠損しても、主電極パ
ツド面上のソルダは全く欠損せず、続く加熱を伴
うソルダボンデイング工程において、ソルダが、
球状に変移した場合、チツプと配線基板の相互パ
ツド間を充分に満たすだけのソルダ量を主電極パ
ツド上に残存させ、更に、補助パツド及び補助パ
ツド上のソルダバンプがもたらす高周波伝送特性
上の悪影響をとりのぞくため、ソルダボンデイン
グ工程において主電極パツドと補助パツドが電気
的に分離されることを特徴としている。上記の分
離作用を容易にするため、ソルダ材料の金属と密
着性の良い金属を中間媒体として、選択的に配置
したり、ソルダ層の中央部を細くくびれさせた形
状として、上記分離動作を容易にしている。
As explained above, the present invention uses a main electrode pad and an auxiliary pad exclusively used for operation testing or chip inspection as a pair, and during testing or inspection, the main electrode pad and auxiliary pad are separated by a solder material layer. While connected, perform an operation test by contacting only the top of the auxiliary pad with the test terminal. On this occasion,
Even if the solder on the auxiliary pad surface is damaged, the solder on the main electrode pad surface is not damaged at all, and in the subsequent solder bonding process that involves heating, the solder is
In the case of a spherical transition, a sufficient amount of solder remains on the main electrode pad to sufficiently fill the space between the mutual pads of the chip and the wiring board, and furthermore, the negative effect on high frequency transmission characteristics caused by the auxiliary pad and the solder bumps on the auxiliary pad is avoided. The main electrode pad and the auxiliary pad are electrically separated from each other in the solder bonding process. In order to facilitate the above separation action, a metal with good adhesion to the metal of the solder material may be selectively placed as an intermediate medium, or the center of the solder layer may be shaped into a narrow constriction to facilitate the above separation action. I have to.

従つて、本発明の電極パツドを用いれば、主電
極パツドに全く悪影響を与えずにチツプ選択等の
回路動作試験や検査を行なうことができ、しか
も、検査後のチツプを駆動する際には、寄生イン
ダクタンス等が小さいというフリツプチツプボン
デイングの特徴を十分に生かした測定が可能とな
る。
Therefore, by using the electrode pad of the present invention, circuit operation tests and inspections such as chip selection can be performed without any adverse effect on the main electrode pad, and moreover, when driving the chip after testing, It is possible to perform measurements that fully utilize the characteristics of flip-chip bonding, such as low parasitic inductance.

本発明は、超高速信号を取り扱うジヨセフソン
集積回路またはGaAs集積回路、または、Siを用
いた半導体集積回路を対象とした電極用パツドに
適用することができる。また、本発明の実施例で
はチツプに切り離した状態での検査について述べ
たがウエハ状態での検査にも適用できる等の利点
を有する。
The present invention can be applied to electrode pads intended for Josephson integrated circuits or GaAs integrated circuits that handle ultrahigh-speed signals, or semiconductor integrated circuits using Si. Furthermore, although the embodiments of the present invention have been described with respect to inspection in a state in which the chip is separated, it has the advantage that it can also be applied to inspection in the state of a wafer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第3図は従来の電極パツド構造の一実
施例を示す断面図、第4図及び第5図は本発明パ
ツドの一実施例を示す断面図である。 1……シリコンウエハ、2……チツプ上の主電
極パツド、3……絶縁層、4……配線、5……中
間金属、6……ソルダバンプ、7……サンプルホ
ルダ、8……バネ、9……被測定チツプ、10…
…圧力、11……補助パツド、12……配線基
板、13……配線基板上の主電極パツド。
1 to 3 are sectional views showing one embodiment of a conventional electrode pad structure, and FIGS. 4 and 5 are sectional views showing one embodiment of the pad of the present invention. DESCRIPTION OF SYMBOLS 1... Silicon wafer, 2... Main electrode pad on chip, 3... Insulating layer, 4... Wiring, 5... Intermediate metal, 6... Solder bump, 7... Sample holder, 8... Spring, 9 ...Chip to be measured, 10...
...Pressure, 11...Auxiliary pad, 12...Wiring board, 13...Main electrode pad on wiring board.

Claims (1)

【特許請求の範囲】 1 ウエハ又はチツプに搭載された集積回路の電
気信号を、外部の配線基板と接続することにより
取り出すための、電気信号用端子としての、該ウ
エハ又は該チツプに搭載された電極パツドにおい
て、一つの電気信号に対して、主電極パツドと補
助パツドが、一定距離をおいて離した構成で一対
として形成され、かつ該主電極パツドおよび補助
パツド表面に、いわゆる低融点はんだ材料の金属
と密着性を有する領域が形成され、かつ該主電極
パツドと該補助パツドの間隔部には、該低融点は
んだ材料の金属とは密着性を有しない領域が形成
され、かつ形成時には該主電極パツドと該補助パ
ツドの両方を一括して覆い、後の加熱工程で該主
電極パツド面上と該補助パツド面上に2つに分離
して、それぞれ球状または他の形状に立体的に変
形する該低融点はんだ材層とから構成されること
を特徴とする補助パツド付き電極パツド。 2 低融点はんだ材層の形状を、中央部すなわち
主電極パツドと補助パツドの間隔部を細くくびら
せた形状となすことを特徴とする特許請求の範囲
第1項記載の補助パツド付き電極パツド。 3 低融点はんだ材層の材質をIn−Bi−Snの共
晶合金又は他のInを含有する金属、又は鉛を含有
する金属とすることを特徴とする特許請求の範囲
第1項記載の補助パツド付き電極パツド。
[Claims] 1. An integrated circuit mounted on the wafer or chip as an electrical signal terminal for extracting electrical signals from the integrated circuit mounted on the wafer or chip by connecting it to an external wiring board. In the electrode pad, in response to one electric signal, a main electrode pad and an auxiliary pad are formed as a pair separated by a certain distance, and a so-called low melting point solder material is applied to the surfaces of the main electrode pad and auxiliary pad. A region is formed that has adhesion to the metal of the low melting point solder material, and a region that does not have adhesion to the metal of the low melting point solder material is formed in the space between the main electrode pad and the auxiliary pad. Both the main electrode pad and the auxiliary pad are covered at once, and in a later heating process, the pad is separated into two parts, one on the main electrode pad surface and the other on the auxiliary pad surface, and each pad is shaped three-dimensionally into a spherical or other shape. An electrode pad with an auxiliary pad, characterized in that the electrode pad is comprised of the deformable low melting point solder material layer. 2. An electrode pad with an auxiliary pad according to claim 1, characterized in that the shape of the low melting point solder material layer is narrowed in the central part, that is, the space between the main electrode pad and the auxiliary pad. . 3. The assistance set forth in claim 1, characterized in that the material of the low melting point solder material layer is an In-Bi-Sn eutectic alloy, other In-containing metal, or lead-containing metal. Electrode pad with pad.
JP58103482A 1983-06-09 1983-06-09 Electrode pad with auxiliary pad Granted JPS59228730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58103482A JPS59228730A (en) 1983-06-09 1983-06-09 Electrode pad with auxiliary pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58103482A JPS59228730A (en) 1983-06-09 1983-06-09 Electrode pad with auxiliary pad

Publications (2)

Publication Number Publication Date
JPS59228730A JPS59228730A (en) 1984-12-22
JPS6246061B2 true JPS6246061B2 (en) 1987-09-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP58103482A Granted JPS59228730A (en) 1983-06-09 1983-06-09 Electrode pad with auxiliary pad

Country Status (1)

Country Link
JP (1) JPS59228730A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346352U (en) * 1989-09-13 1991-04-30

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554940A (en) * 1994-07-05 1996-09-10 Motorola, Inc. Bumped semiconductor device and method for probing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346352U (en) * 1989-09-13 1991-04-30

Also Published As

Publication number Publication date
JPS59228730A (en) 1984-12-22

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