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JPS6248758B2 - - Google Patents
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JPS6248758B2 - - Google Patents

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Publication number
JPS6248758B2
JPS6248758B2 JP9426680A JP9426680A JPS6248758B2 JP S6248758 B2 JPS6248758 B2 JP S6248758B2 JP 9426680 A JP9426680 A JP 9426680A JP 9426680 A JP9426680 A JP 9426680A JP S6248758 B2 JPS6248758 B2 JP S6248758B2
Authority
JP
Japan
Prior art keywords
substrate
electrode plate
etched
cooled electrode
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9426680A
Other languages
Japanese (ja)
Other versions
JPS5719379A (en
Inventor
Juji Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP9426680A priority Critical patent/JPS5719379A/en
Publication of JPS5719379A publication Critical patent/JPS5719379A/en
Publication of JPS6248758B2 publication Critical patent/JPS6248758B2/ja
Granted legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 本発明は、半導体基板もしくはフオトマスク基
板等のドライエツチング加工に適用する上部水冷
電極型ドライエツチング装置に関するもので、そ
の目的とするところは、被エツチング基板の水冷
効果を高めてフオトレジスト画像の損傷を低減す
るとともに、ごみ等からの影響を少くし、もつて
加工精度の向上とその作業能率を高めるにある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an upper water-cooled electrode type dry etching apparatus that is applied to dry etching processing of semiconductor substrates, photomask substrates, etc., and its purpose is to enhance the water cooling effect of the substrate to be etched. The objective is to reduce damage to photoresist images, reduce the influence of dust, etc., and improve processing accuracy and work efficiency.

従来、半導体基板もしくはフオトマスク基板等
の被エツチング基板(第1図)は、水冷電極板が
下方にあつて、被エツチング基板を、そのエツチ
ング面を上方に向けて、電極上に設置するのが一
般的であるが、この方法だと特に基板支持機構を
必要としないため、装置的には容易な面がある反
面、逆に次のような欠点があるものである。すな
わち、 被エツチング基板と水冷電極板表面との密着
がよくなく、被エツチング基板の水冷効果が不
充分なため、エツチング加工中に基板の温度が
上昇して、基板上に形成されているフオトレジ
スト画像が損傷を受け、その結果加工精度が低
下する。
Conventionally, a substrate to be etched (Fig. 1), such as a semiconductor substrate or a photomask substrate, is generally placed on the electrode with the water-cooled electrode plate facing downward, and the etched surface thereof facing upward. However, although this method does not require a particular substrate support mechanism and is easy to use in terms of equipment, it also has the following drawbacks. In other words, the adhesion between the substrate to be etched and the surface of the water-cooled electrode plate is not good, and the water-cooling effect of the substrate to be etched is insufficient, so the temperature of the substrate increases during the etching process, causing the photoresist formed on the substrate to deteriorate. The image is damaged, resulting in reduced processing accuracy.

エツチング効果を高めるため、グリース等を
基板裏面に塗り、水冷電極板上に固着する方法
をとると、水冷効果は改善されるが、グリース
等からの被エツチング基板、その他への汚染が
防ぎきれない。
In order to enhance the etching effect, applying grease or the like to the back of the substrate and fixing it on the water-cooled electrode plate improves the water-cooling effect, but it does not prevent contamination of the substrate to be etched or others from the grease. .

被エツチング面を上方に向けて下部水冷電極
板上に設置するため、設置時や真空排気時に被
エツチング基板加工面上へのごみ等の付着は防
ぎがたく、エツチングされた製品に欠陥が多発
することがある。
Since the etched surface is placed on the lower water-cooled electrode plate with the surface to be etched facing upward, it is difficult to prevent dust from adhering to the surface of the etched substrate during installation or vacuum evacuation, resulting in many defects in the etched product. Sometimes.

以上の点を改善するために、水冷電極板を上部
に設置したドライエツチング装置は、すでにある
が、その1つは第2図に示すもので、被エツチン
グ基板を取着けた基板取着台と上部水冷電極板と
をクランプ等で固着する方式で、この方式では、
両者の密着は良好であるが、被エツチング基板を
基板取着台に取着ける工程と、この基板取着台を
上部水冷電極板の下部にクランプで保持する工程
との2工程を必要とし、作業能率の低下の他に、
工程数が増えるので、それだけごみ等の付着の影
響も大きいものである。
In order to improve the above points, there are already dry etching apparatuses in which a water-cooled electrode plate is installed on the top, one of which is shown in Figure 2. This is a method in which the upper water-cooled electrode plate is fixed with a clamp, etc.
Although the adhesion between the two is good, it requires two steps: attaching the substrate to be etched to the substrate mount, and holding the substrate mount under the upper water-cooled electrode plate with a clamp. Besides the loss of efficiency,
Since the number of steps increases, the influence of adhesion of dust and the like is correspondingly large.

また第3図に示すものは、基板取着台を、上部
水冷電極板中の透孔を通して支柱で持ち上げて電
極板と密着させる方式であるが、この方式では、
上部水冷電極板に透孔を穿設する必要があり、か
つ装置が複雑となるものである。
In addition, in the system shown in Fig. 3, the substrate mount is lifted up with a support through a hole in the upper water-cooled electrode plate and brought into close contact with the electrode plate.
It is necessary to drill through holes in the upper water-cooled electrode plate, and the device becomes complicated.

以上述べた第1図において、符号1は下部水冷
電極板、3は被エツチング基板、5は対向電極
盤、6は絶縁体、7は高周波電源である。第2図
においては、1は上部水冷電極板、2は基板取着
台、3は被エツチング基板、4はクランプ部材、
6は絶縁体であり、第3図においては、1は上部
水冷電極板、2は基板取着台、3は被エツチング
基板、4は支柱、6は絶縁体である。
In FIG. 1 described above, reference numeral 1 is a lower water-cooled electrode plate, 3 is a substrate to be etched, 5 is a counter electrode plate, 6 is an insulator, and 7 is a high frequency power source. In FIG. 2, 1 is an upper water-cooled electrode plate, 2 is a substrate mounting stand, 3 is a substrate to be etched, 4 is a clamp member,
6 is an insulator; in FIG. 3, 1 is an upper water-cooled electrode plate, 2 is a substrate mount, 3 is a substrate to be etched, 4 is a support, and 6 is an insulator.

本発明は、第2図及び第3図に示すような上部
に水冷電極板を使用したドライエツチング装置を
さらに改良したものである。
The present invention is a further improvement of the dry etching apparatus using a water-cooled electrode plate on the upper part as shown in FIGS. 2 and 3.

すなわち、簡単な装置により、被エツチング基
板の水冷効果を高めて、フオトレジスト画像の損
傷を少くし、かつごみ等の影響を低減できるた
め、高精度のエツチング加工と作業能率の向上を
可能にするものである。
In other words, with a simple device, it is possible to enhance the water cooling effect of the etched substrate, reduce damage to the photoresist image, and reduce the influence of dust, etc., making it possible to perform highly accurate etching processing and improve work efficiency. It is something.

これを実施例の第4図イ,ロ,ハについて説明
する。
This will be explained with reference to FIGS. 4A, 4B, and 3C of the embodiment.

加工室10内には、被エツチング基板12の基
板取着台11がその下方に突設した支柱13,1
3をもつて、底盤に植設された支管14,14内
のスプリング15,15を介して上下動自在に設
置されており、基板取着台11の下方、支管1
4,14間には、対向電極板16が、またその上
方には、ガス噴射管17が横設されている。加工
室10の上方は開口されており、その側壁には排
気管18が設けられている。加工室10の上方開
口端に嵌合する上部水冷電極板19は、掩蓋20
に取着けられていて、加工室10の外側にあるリ
フト21によつて上下動自在に設置されている。
上部水冷電極板19は、その外周の絶縁体部22
にて加工室10に嵌合し、内部には冷却水管23
が配設されており、高周波電源24に連結してい
る。
In the processing chamber 10, the substrate mounting table 11 for the substrate to be etched 12 is provided with support columns 13, 1 protruding from below.
3, it is installed vertically movably via springs 15, 15 in the branch pipes 14, 14 planted in the bottom panel, and the branch pipe 1 is located below the board mount 11.
A counter electrode plate 16 is disposed between the counter electrode plates 4 and 14, and a gas injection pipe 17 is disposed horizontally above the counter electrode plate 16. The upper part of the processing chamber 10 is open, and an exhaust pipe 18 is provided on the side wall thereof. The upper water-cooled electrode plate 19 that fits into the upper opening end of the processing chamber 10 is connected to the cover 20.
It is installed so that it can be moved up and down by a lift 21 located outside the processing chamber 10.
The upper water-cooled electrode plate 19 has an insulator portion 22 on its outer periphery.
It fits into the processing chamber 10, and there is a cooling water pipe 23 inside.
is provided and connected to a high frequency power source 24.

使用にあたつては、ロ図のようにリフト21に
よつて上部水冷電極板19を上方にあげておき、
基板取着台11に被エツチング基板12を、その
エツチング面を下方にして取着けた後に、ハ図の
ように上部水冷電極板19をリフト21によつて
下降させると、電極板19は加工室に嵌合すると
ともに、電極板19の下面で、被エツチング基板
12を取着けた基板取着台11を、スプリング1
5,15に抗して掩蓋20が加工室10の上方開
口端に突き当るまで下降する。ここにおいて、基
板取着台11上の被エツチング基板12は、スプ
リング15,15の反発作用によつてバランスを
とりながら電極板19の下面によく密着する。
When in use, raise the upper water-cooled electrode plate 19 upwards using the lift 21 as shown in Fig.
After mounting the substrate 12 to be etched on the substrate mounting table 11 with its etching surface facing downward, the upper water-cooled electrode plate 19 is lowered by the lift 21 as shown in Figure C, and the electrode plate 19 is placed in the processing chamber. At the same time, the spring 1
5 and 15, the cover 20 descends until it hits the upper opening end of the processing chamber 10. Here, the substrate 12 to be etched on the substrate mount 11 is brought into close contact with the lower surface of the electrode plate 19 while being balanced by the repulsive action of the springs 15, 15.

以上説明したように、本発明は、水冷電極板を
上方に上下動自在に設けるとともに、被エツチン
グ基板を取着ける基板取着台をスプリングを介し
て上下動自在に設けているので、水冷電極板の下
降により、それが基板取着台に取着けられた被エ
ツチング基板と接した際、基板取着台を支持して
いるスプリングの反発作用により、両者はバラン
スをとつてよく密着し、これによつて被エツチン
グ基板はよく冷却されるから、基板上に形成され
ているフオトレジスト画像が熱によつて歪み、損
傷を受けることはない。しかも、被エツチング基
板は、そのエツチング面を下方に向けて基板取着
台に取着けられているので、ごみ等の付着は極め
て少く、良好な冷却によるフオトレジスト画像の
歪の防止と相俟つて加工精度を向上させることが
できる。さらに、このような加工精度が高いにも
かかわらず、上部水冷電極板を上下動することに
よつてできるのであるから、作業能率をあげるこ
とができる。
As explained above, in the present invention, the water-cooled electrode plate is provided above so as to be movable up and down, and the substrate mount for attaching the substrate to be etched is provided so as to be movable up and down via a spring. As it descends, when it comes into contact with the substrate to be etched mounted on the substrate mount, due to the repulsive action of the spring supporting the substrate mount, the two are balanced and come into close contact with each other. Since the substrate to be etched is thus well cooled, the photoresist image formed on the substrate is not distorted or damaged by heat. Moreover, since the substrate to be etched is mounted on the substrate mount with its etching surface facing downward, there is very little dust, etc. adhering to it, and good cooling prevents distortion of the photoresist image. Machining accuracy can be improved. Furthermore, even though the machining accuracy is high, the work efficiency can be increased because the machining can be done by moving the upper water-cooled electrode plate up and down.

なお、実験によると、従来の下部水冷電極型の
ドライエツチング装置によると被エツチング基板
の温度が100〜200℃であるのに対して、本発明の
上部水冷電極型のもののそれは、30〜80℃の低温
である。
According to experiments, the temperature of the substrate to be etched is 100 to 200°C in the conventional dry etching apparatus of the lower water-cooled electrode type, whereas that of the upper water-cooled electrode type of the present invention is 30 to 80°C. The temperature is low.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の下部水冷電極型のドライエツチ
ング装置の簡略説明図、第2図及び第3図は上部
水冷電極型のドライエツチング装置であつて本発
明と異なるものの簡略説明図、第4図イ,ロ,ハ
は本発明の上部水冷電極型のドライエツチング装
置の説明的断面図である。 符号、10……加工室、11……基板取着台、
12……被エツチング基板、13……支柱、14
……支管、15……スプリング、16……対向電
極板、17……ガス噴射管、18……排気管、1
9……上部水冷電極板、21……リフト、22…
…絶縁体、23……冷却水管、24……高周波電
源。
FIG. 1 is a simplified explanatory diagram of a conventional lower water-cooled electrode type dry etching apparatus, FIGS. 2 and 3 are simplified explanatory diagrams of an upper water-cooled electrode type dry etching apparatus different from the present invention, and FIG. A, B, and C are explanatory cross-sectional views of an upper water-cooled electrode type dry etching apparatus of the present invention. Code, 10...processing room, 11...board mounting stand,
12...Substrate to be etched, 13...Strut, 14
... Branch pipe, 15 ... Spring, 16 ... Counter electrode plate, 17 ... Gas injection pipe, 18 ... Exhaust pipe, 1
9... Upper water-cooled electrode plate, 21... Lift, 22...
...Insulator, 23...Cooling water pipe, 24...High frequency power supply.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体基板もしくはフオトマスク基板等の被
エツチング基板を、そのエツチング面を下方にし
て取着けられるようにした基板取着台を、スプリ
ング等を介した上下動自在の支持装置によつて支
持するとともに基板取着台より上方にある上部水
冷電極板を上下動自在に設けたことを特徴とする
上部水冷電極型ドライエツチング装置。
1. A substrate mounting stand on which a substrate to be etched, such as a semiconductor substrate or a photomask substrate, can be mounted with its etching surface facing downward, is supported by a vertically movable support device using a spring, etc. An upper water-cooled electrode type dry etching device characterized in that an upper water-cooled electrode plate is provided above the mounting base and is movable up and down.
JP9426680A 1980-07-09 1980-07-09 Dry etching device having upper water cooled electrode Granted JPS5719379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9426680A JPS5719379A (en) 1980-07-09 1980-07-09 Dry etching device having upper water cooled electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9426680A JPS5719379A (en) 1980-07-09 1980-07-09 Dry etching device having upper water cooled electrode

Publications (2)

Publication Number Publication Date
JPS5719379A JPS5719379A (en) 1982-02-01
JPS6248758B2 true JPS6248758B2 (en) 1987-10-15

Family

ID=14105469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9426680A Granted JPS5719379A (en) 1980-07-09 1980-07-09 Dry etching device having upper water cooled electrode

Country Status (1)

Country Link
JP (1) JPS5719379A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61260637A (en) * 1985-05-15 1986-11-18 Mitsubishi Electric Corp Dry etching device
JPH01186621A (en) * 1987-07-16 1989-07-26 Texas Instr Inc <Ti> Apparatus and method for processing

Also Published As

Publication number Publication date
JPS5719379A (en) 1982-02-01

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