JPS6249094B2 - - Google Patents
Info
- Publication number
- JPS6249094B2 JPS6249094B2 JP393379A JP393379A JPS6249094B2 JP S6249094 B2 JPS6249094 B2 JP S6249094B2 JP 393379 A JP393379 A JP 393379A JP 393379 A JP393379 A JP 393379A JP S6249094 B2 JPS6249094 B2 JP S6249094B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- pattern
- light
- resist
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000005323 electroforming Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Filtering Materials (AREA)
- Combined Means For Separation Of Solids (AREA)
Description
【発明の詳細な説明】
本発明は、均一な目孔径を有し、開孔率の高い
超微細粒子のふるいわけ用金属フイルターの製造
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a metal filter for screening ultrafine particles having a uniform pore size and a high porosity.
従来、粉塵、鉄鋼中の非金属介在物、顔料、研
磨剤等のふるい分け、粒度分布測定用フイルター
はニツケルまたは銅などの金属を、写真製版され
たレジストパターンを有する導電性基板上に電気
メツキすることにより製造されており、通常は5
〜25μの目孔のあいたフイルターであるが、必要
に応じて目孔径5μ以下のフイルターも製造され
ている。 Conventionally, filters for screening dust, nonmetallic inclusions in steel, pigments, abrasives, etc., and measuring particle size distribution are made by electroplating metals such as nickel or copper onto a conductive substrate having a photolithographic resist pattern. It is manufactured by
The filter has pores of ~25μ, but filters with pores of 5μ or less are also manufactured as required.
しかしながら、レジストの写真製版に使用され
るフオトマスクは、通常、拡大された原図をカメ
ラにより縮小させて所定のパターンがつくられて
いるが、大面積、高精度で微細パターンを形成さ
せるにはレンズの性能上限界がある。 However, with photomasks used in resist photolithography, a predetermined pattern is usually created by reducing an enlarged original image with a camera, but in order to form fine patterns over a large area with high precision, lenses There are limits to performance.
このため、目孔径5μ以下の金属フイルターを
得るには、目孔径5μ以上のパターンを有するフ
オトマスクを介して、あらかじめフオトレジスト
層が設けられた導電性基板1上に写真製版法によ
りレジストパターン2を形成させ(第1図aもし
くは第2図a)、基板の露出部にニツケルまたは
銅などの金属3を電気メツキして(第1図bもし
くは第2図b)目孔径5μ以上のフイルターを製
作した後、フイルター3を基板から剥離し(第1
図cもしくは第2図c)、レジスト剥膜後、さら
にメツキして目孔径を縮少する(第1図dもしく
は第2図d)ことで所望の目孔径を有するフイル
ターを製造することが行なわれるが、この方法に
より得られる導電性基板上のレジストパターンは
ピツチが大きく、目孔径を縮少するため、開孔率
はますます低下するという欠点を有している。 Therefore, in order to obtain a metal filter with a pore size of 5 μm or less, a resist pattern 2 is formed by photolithography on a conductive substrate 1 on which a photoresist layer has been previously provided, via a photomask having a pattern with a pore size of 5 μm or more. (Fig. 1a or 2a) and electroplating a metal 3 such as nickel or copper on the exposed part of the substrate (Fig. 1b or 2b) to produce a filter with an pore diameter of 5μ or more. After that, the filter 3 is peeled off from the substrate (first
After removing the resist film, the pore diameter is further reduced by plating (FIG. 1 d or 2 d) to produce a filter with the desired pore diameter. However, the resist pattern on the conductive substrate obtained by this method has a large pitch and the pore diameter is reduced, which has the disadvantage that the pore area ratio further decreases.
本発明は、レザー光の干渉によつて得られる干
渉縞パターンの遮光性材料を有するフオトマスク
を用い、導電性基板上にエレクトロフオーミング
法により上記フオトマスクパターンと同様で均一
な超微細目孔径をもつ開孔率の高いふるい分け用
金属フイルターを製造する方法を提供するもので
ある。 The present invention uses a photomask having a light-shielding material with an interference fringe pattern obtained by interference of laser light, and uses an electroforming method to form ultra-fine pores with a uniform diameter similar to the photomask pattern above on a conductive substrate. The present invention provides a method for manufacturing a metal sieving filter having a high porosity.
以下、上記の本発明について図面を参照しつつ
詳細に説明する。 Hereinafter, the above-described present invention will be explained in detail with reference to the drawings.
第3図はレーザー干渉によりフオトマスクを製
作するための光学系の一例を示す。第3図におい
て11は、可干渉性のあるレーザー光の発生源で
ある。12は、レーザー光の平行光線を透過光と
反射光を1:1に分割するためのビームスプリツ
ターである。13はビームスプリツター12で分
割された光束を再結像するための全反射ミラーで
ある。14は全反射ミラー13で全反射されたレ
ーザー光線を広げるもので顕微鏡の対物レンズで
ある。15はレンズを通過する光がほこりや湿気
などの汚れによる散乱光がマスク原版上に設けた
感光材料層16に到達するのを防止するためにレ
ンズの焦点距離に置かれたピンホール板である。 FIG. 3 shows an example of an optical system for manufacturing a photomask by laser interference. In FIG. 3, 11 is a source of coherent laser light. 12 is a beam splitter for splitting the parallel beam of the laser beam into transmitted light and reflected light at a ratio of 1:1. Reference numeral 13 denotes a total reflection mirror for re-imaging the light beam split by the beam splitter 12. Reference numeral 14 denotes an objective lens of the microscope, which spreads the laser beam totally reflected by the total reflection mirror 13. 15 is a pinhole plate placed at the focal length of the lens to prevent light passing through the lens from being scattered by dirt such as dust and moisture from reaching the photosensitive material layer 16 provided on the mask original plate. .
第4図は、第3図の光学系によつて感光材料層
16に焼きつけられ、現像によつて得られる干渉
縞のフオトレジストパターンの一例を示す。 FIG. 4 shows an example of a photoresist pattern of interference fringes printed on the photosensitive material layer 16 by the optical system shown in FIG. 3 and obtained by development.
第5図は、第4図で焼きつけられた干渉縞パタ
ーンを有するマスク原版をさらに90゜回転して焼
きつけ、現像によつて得られる回折格子レジスト
パターンを示す。 FIG. 5 shows a diffraction grating resist pattern obtained by further rotating the mask original plate having the interference fringe pattern printed in FIG. 4 by 90 degrees, printing it, and developing it.
干渉縞パターンのピツチaは、第3図の二つの
平行光線が結像する交叉角θ、レーザー光線の波
長をλとすると次式で表わされる。 The pitch a of the interference fringe pattern is expressed by the following equation, where θ is the intersection angle at which the two parallel rays of FIG. 3 form an image, and λ is the wavelength of the laser beam.
例えば、He−Cdレーザーを用いた3250Åの光
によつてピツチ1μ以下の回折格子パターンが容
易に得られる。 For example, a diffraction grating pattern with a pitch of 1 μm or less can be easily obtained using 3250 Å light using a He-Cd laser.
用いる感光材料はレーザー光に感光するネガ型
またはポジ型レジストのどちらでもよい。例え
ば、ポジ型レジストとしては商品名、AZ1350
(米国シツプレー社製)、KAR(米国コダツク社
製)、OFPR(東京応化工業社製)がある。ネガ
型レジストとしては商品名、KMR、KTFR、
KPR(米国コダツク社製)、ウエイコート(米国
ハント社製)などの溶剤レジストのほか、ゼラチ
ン、カゼイン、グリユーに重クロム酸アンモンを
添加した水溶性レジストがある。 The photosensitive material used may be either a negative resist or a positive resist that is sensitive to laser light. For example, as a positive resist, the product name is AZ1350.
(manufactured by Shipprey, USA), KAR (manufactured by Kodatsu, USA), and OFPR (manufactured by Tokyo Ohka Kogyo). For negative resists, the product names are KMR, KTFR,
In addition to solvent resists such as KPR (manufactured by Kodatsu, USA) and Waycoat (manufactured by Hunt, USA), there are also water-soluble resists made by adding ammonium dichromate to gelatin, casein, and gryu.
フオトマスクを構成する遮光性材料としては、
例えば蒸着またはスパツタリングによつてえられ
るクロム、酸化クロム、酸化鉄などの数百〜数千
オングストロームの薄膜が適用される。 The light-shielding materials that make up the photomask include:
For example, a thin film of several hundred to several thousand angstroms of chromium, chromium oxide, iron oxide, etc. obtained by vapor deposition or sputtering is applied.
第6図は、本発明によるふるい分け用金属フイ
ルターの製造に用いるフオトマスクの製造法の一
例を各工程別に示す模式断面図である。第6図a
はガラスなどの透明基板17およびその上に設け
られたクロムなどの遮光性材料層18を有するマ
スク原版を示す。第6図bはマスク原版の遮光性
材料層18上に感光材料層19が塗布されたもの
で、第3図の光学系によつて干渉縞パターンを焼
きつけ、現像すれば、第6図Cに示す如くレジス
トパターン19Aが形成される。第6図dに示す
如くこのレジスト層19Aを介して、露出した遮
光材料層18をエツチングし、次いで、第6図e
に示す如くレジスト19Aを剥離すれば目的とす
るフオトマスクPが得られる。 FIG. 6 is a schematic cross-sectional view showing each step of an example of a method for manufacturing a photomask used in manufacturing a metal filter for sieving according to the present invention. Figure 6a
1 shows a mask original having a transparent substrate 17 made of glass or the like and a light-shielding material layer 18 made of chromium or the like provided thereon. Figure 6b shows a photosensitive material layer 19 coated on the light-shielding material layer 18 of the mask original, and if an interference fringe pattern is printed and developed using the optical system of Figure 3, the image shown in Figure 6C is shown. As shown, a resist pattern 19A is formed. As shown in FIG. 6d, the exposed light-shielding material layer 18 is etched through this resist layer 19A, and then, as shown in FIG.
By peeling off the resist 19A as shown in FIG. 2, the desired photomask P can be obtained.
また、図示しないが、透明基板上に設けた感光
材料層に上記レーザー光による焼付けを行ない、
現像して所望のレジストパターンを形成した状態
で、次にクロム等の遮光材料を蒸着、スパツタリ
ング等の方法により積層し、レジストを除去する
と同時にフオトマスクを完成する、いわゆるリフ
トオフ法によつても製作することができる。この
場合には、前記方法と同じタイプの感光材料を使
用して遮光パターンの逆転したマスクの作成がで
きる。 Although not shown, the photosensitive material layer provided on the transparent substrate is printed with the laser beam,
After developing and forming the desired resist pattern, a light-shielding material such as chromium is then layered by vapor deposition, sputtering, etc., and the photomask is completed at the same time as the resist is removed.It is also manufactured using the so-called lift-off method. be able to. In this case, it is possible to create a mask with a reversed light-shielding pattern using the same type of photosensitive material as in the above method.
次に、第7図は、上記の如きフオトマスクPを
用いて金属フイルターを製造する方法の一例の各
工程を模式的に示す断面図である。まず、第7図
aに示す如く、上記フオトマスクPを用いて導電
性基板21上に設けたフオトレジスト層22に微
細回折格子パターンを紫外光20で焼きつける。
しかる後第7図bに示す如く現像することにより
レジストパターン22Aを得る。次いで、通常の
エレクトロフオーミング法により、第7図cに示
す如く金属23を電気メツキし、次いで第7図d
に示す如く該金属23を剥離することにより金属
フイルターが製造できる。上記において用いられ
るフオトレジストは前記のフオトレジストの他に
遠紫外線用フオトレジスト、例えば、ポリメチル
メタアクリレート(PMMA)、ポリブチルメタア
クリレートなどの使用も可能である。 Next, FIG. 7 is a cross-sectional view schematically showing each step of an example of a method for manufacturing a metal filter using the photomask P as described above. First, as shown in FIG. 7a, a fine diffraction grating pattern is printed with ultraviolet light 20 on a photoresist layer 22 provided on a conductive substrate 21 using the photomask P.
Thereafter, a resist pattern 22A is obtained by developing as shown in FIG. 7b. Next, the metal 23 is electroplated as shown in FIG. 7c by a conventional electroforming method, and then the metal 23 is electroplated as shown in FIG. 7d.
A metal filter can be manufactured by peeling off the metal 23 as shown in FIG. In addition to the above-mentioned photoresists, photoresists for deep ultraviolet rays, such as polymethyl methacrylate (PMMA) and polybutyl methacrylate, can also be used as the photoresists used above.
本発明による場合は、あらかじめフイルターの
孔径は用いるフオトマスクパターンと一致させて
あるので、メツキにより縮小する必要はない。本
発明によつて製作される金属フイルターの孔径は
マスクパターンの孔径がそのまま維持されるの
で、超微細で均一であり、1μ以下が可能であ
る。開孔率は従来のフイルターに比べ非常に高
い。 In the case of the present invention, since the pore diameter of the filter is matched in advance with the photomask pattern to be used, there is no need to reduce it by plating. Since the pore diameter of the metal filter manufactured according to the present invention is maintained as it is in the mask pattern, the pore diameter is extremely fine and uniform, and can be 1 μm or less. The porosity is much higher than conventional filters.
以下、図面を参照しつつ実施例を示して本発明
をさらに具体的に説明する。 Hereinafter, the present invention will be described in more detail by showing examples while referring to the drawings.
実施例 1
第6図において、透明ガラス基板17上に蒸着
された厚み約1000Åの遮光材料層(クロム)層1
8上にシツプレー社製AZ1350レジストをスピン
ナーにて約1000Åの厚みに塗布して形成した感光
材料層19を第3図に示した光学系を用いて、角
度約15゜で交叉する波長4880Å、出力1Wのアル
ゴンレーザーの二光束干渉光を10分間焼きつけ
た。次いで、90゜回転して同様に干渉光を10分間
焼きつけた後、AZ1350レジスト用現像液で現像
を行ない、露光したクロム層を化学腐食させレジ
ストを剥離し、第5図に示すピツチ約2μの回折
格子パターンを有するフオトマスクを作製した。
この回折格子マスクを用い第7図に示したよう
に、シツプレー社AZ1350Jレジストを塗布した
(塗布厚約2μ)ステンレス基板上に超高圧水銀
灯で焼きつけ、現像後、ニツケルメツキして厚さ
約2μの金属フイルターを作製した。Example 1 In FIG. 6, a light shielding material layer (chromium) layer 1 with a thickness of about 1000 Å is deposited on a transparent glass substrate 17.
Using the optical system shown in Fig. 3, a photosensitive material layer 19 was formed by applying Shippley's AZ1350 resist to a thickness of about 1000 Å on top of 8 using a spinner. The two-beam interference beam of a 1W argon laser was burned for 10 minutes. Next, after rotating 90 degrees and exposing the interference light for 10 minutes, development was performed using AZ1350 resist developer, and the exposed chromium layer was chemically etched and the resist was peeled off, resulting in a pitch of approximately 2μ as shown in Figure 5. A photomask with a diffraction grating pattern was fabricated.
Using this diffraction grating mask, as shown in Figure 7, a stainless steel substrate coated with Shipprey's AZ1350J resist (approximately 2μ thick) was baked with an ultra-high pressure mercury lamp, developed, and then nickel plated to form a metal sheet with a thickness of approximately 2μ. A filter was made.
このフイルターはピツチ約2μ、目孔径約1μ
の均一な孔をもち、微細粒子のふるい分け用とし
て使用できた。 This filter has a pitch of approximately 2μ and an pore diameter of approximately 1μ.
It has uniform pores and can be used for screening fine particles.
実施例 2
実施例1でフオトマスクを構成する遮光材料層
のクロムを四塩化炭素、酸素の混合ガス雰囲気中
でプラスマエツチングして同様の回折格子マスク
を作製した、このマスクを用い、同様に金属フイ
ルターを作製した。Example 2 A similar diffraction grating mask was produced by plasma etching the chromium of the light-shielding material layer constituting the photomask in a mixed gas atmosphere of carbon tetrachloride and oxygen in Example 1. Using this mask, a metal filter was similarly fabricated. was created.
実施例 3
実施例1又は2により、石英ガラス基板による
回折格子マスクを作製した。この回折格子マスク
を用い、ポリメチルメタアクリレート
(PMMA)レジストパターンが設けられたステン
レス基板上にニツケルメツキして金属フイルター
を作製した。Example 3 According to Example 1 or 2, a diffraction grating mask using a quartz glass substrate was produced. Using this diffraction grating mask, a metal filter was fabricated by plating nickel onto a stainless steel substrate provided with a polymethyl methacrylate (PMMA) resist pattern.
第1図および第2図はそれぞれ従来のエレクト
ロフオーミング法による金属フイルターの製造工
程を模式的に示す断面図である。第3図は、本発
明に用いるフオトマスク作製のためにレーザー干
渉を起こさせる光学系の一例を示す説明図、第4
図および第5図は第3図の光学系によつて得られ
る回折格子パターンの一例を示す平面図である。
第6図は、本発明に用いるフオトマスク製造法の
一例を各工程別に示す模式断面図であり、第7図
は、本発明の方法により金属フイルターを製造す
る方法の一例の各工程を模式的に示す断面図であ
る。
11……レーザー光発生源、12……ビームス
プリツター、13……全反射ミラー、14……対
物レンズ、15……ピンホール板、16……感光
材料層、17……透明基板、18……遮光性材料
層、19……感光材料層、19A……レジストパ
ターン、20……紫外光、21……導電性基板、
22……フオトレジスト層、22A……レジスト
パターン、23……金属。
FIGS. 1 and 2 are cross-sectional views schematically showing the manufacturing process of a metal filter by the conventional electroforming method, respectively. FIG. 3 is an explanatory diagram showing an example of an optical system that causes laser interference to produce a photomask used in the present invention;
5 and 5 are plan views showing an example of a diffraction grating pattern obtained by the optical system of FIG. 3.
FIG. 6 is a schematic cross-sectional view showing each step of an example of the photomask manufacturing method used in the present invention, and FIG. 7 is a schematic cross-sectional view showing each step of an example of the method of manufacturing a metal filter by the method of the present invention. FIG. DESCRIPTION OF SYMBOLS 11... Laser light generation source, 12... Beam splitter, 13... Total reflection mirror, 14... Objective lens, 15... Pinhole plate, 16... Photosensitive material layer, 17... Transparent substrate, 18... ...Light-shielding material layer, 19... Photosensitive material layer, 19A... Resist pattern, 20... Ultraviolet light, 21... Conductive substrate,
22...Photoresist layer, 22A...Resist pattern, 23...Metal.
Claims (1)
感光性材料層にフオトマスクを介して微細パター
ンを焼付けた後、現像してレジストパターンを形
成し、次いで該レジストパターンを有する導電性
基板上にエレクトロフオーミング法により金属を
析出させ、析出金属を上記基板から剥すことによ
り金属フイルターを製造する方法に於いて、上記
フオトマスクとして、レーザー光の干渉縞パター
ンの遮光性材料を透明基板の一方の面に有するフ
オトマスクを用いることを特徴とする金属フイル
ターの製造法。1. After applying a photosensitive material onto a conductive substrate, a fine pattern is printed on the photosensitive material layer through a photomask, and then developed to form a resist pattern, and then a resist pattern is formed on the conductive substrate having the resist pattern. In the method of manufacturing a metal filter by depositing metal by electroforming and peeling the deposited metal from the substrate, the photomask is made of a light-shielding material with a laser beam interference fringe pattern on one side of the transparent substrate. A method for manufacturing a metal filter, characterized by using a photomask on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP393379A JPS5597220A (en) | 1979-01-19 | 1979-01-19 | Method of producing metal filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP393379A JPS5597220A (en) | 1979-01-19 | 1979-01-19 | Method of producing metal filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5597220A JPS5597220A (en) | 1980-07-24 |
| JPS6249094B2 true JPS6249094B2 (en) | 1987-10-16 |
Family
ID=11570931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP393379A Granted JPS5597220A (en) | 1979-01-19 | 1979-01-19 | Method of producing metal filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5597220A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019228006A1 (en) * | 2018-05-31 | 2019-12-05 | 京东方科技集团股份有限公司 | Manufacturing method for evaporation mask, and evaporation mask |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715578B2 (en) * | 1992-06-19 | 1995-02-22 | 株式会社日立製作所 | Master plate for photomask |
| US7242464B2 (en) | 1999-06-24 | 2007-07-10 | Asml Holdings N.V. | Method for characterizing optical systems using holographic reticles |
| GB2354459B (en) | 1999-09-22 | 2001-11-28 | Viostyle Ltd | Filtering element for treating liquids, dusts and exhaust gases of internal combustion engines |
| AU2001278941A1 (en) * | 2000-07-19 | 2002-01-30 | Silicon Valley Group Inc | System and method for characterizing optical systems using holographic reticles |
-
1979
- 1979-01-19 JP JP393379A patent/JPS5597220A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019228006A1 (en) * | 2018-05-31 | 2019-12-05 | 京东方科技集团股份有限公司 | Manufacturing method for evaporation mask, and evaporation mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5597220A (en) | 1980-07-24 |
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