JPS62492B2 - - Google Patents
Info
- Publication number
- JPS62492B2 JPS62492B2 JP365179A JP365179A JPS62492B2 JP S62492 B2 JPS62492 B2 JP S62492B2 JP 365179 A JP365179 A JP 365179A JP 365179 A JP365179 A JP 365179A JP S62492 B2 JPS62492 B2 JP S62492B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- resist layer
- layer
- resist
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
本発明はホトリソグラフイによるホトマスクの
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a photomask by photolithography.
一般に、半導体や金属や絶縁物等の基板又は薄
膜に所要のパターンを形成するため、不要部分を
光学的及び化学的手段によつて除去する技術、所
謂ホトリソグラフイにおいて、前記基板又は薄膜
表面にレジスト層を膜成し、所要部分を保護する
レジストパターンを作るに際して使用するホトマ
スクには、レジストパターンと逆のパターンを具
備せしめたネガ形マスク及びレジストパターンと
同じパターンを具備せしめたポジ形マスクがあ
り、何れも一つのマスター・マスクから複写して
作られる。 In general, in so-called photolithography, a technique for removing unnecessary parts by optical and chemical means to form a desired pattern on a substrate or thin film such as a semiconductor, metal, or insulator, the surface of the substrate or thin film is The photomasks used to form a resist layer and create a resist pattern to protect required areas include a negative mask with a pattern opposite to the resist pattern and a positive mask with the same pattern as the resist pattern. Yes, all are made by copying from one master mask.
従つてネガ形コピー・マスクの製造にはネガ用
レジスト剤を使用し、ポジ形コピー・マスクの製
造にはポジ用レジスト剤を使用しなければなら
ず、レジスト剤を使い分ける煩わしさがあつた。 Therefore, a negative resist agent must be used to manufacture a negative copy mask, and a positive resist agent must be used to manufacture a positive copy mask, creating the hassle of using different resist agents.
本発明の目的は上記煩わしたを除去することで
あり、この目的はマスク原板にマスター・マスク
のパターンを複写する第１次露光工程と露光レジ
スト層を着色する印刷工程と第二露光工程とレジ
スト層現像工程とメタル層エツチング工程を含む
ことを特徴としたホトマスクの製造方法を提供し
て達成される。 The purpose of the present invention is to eliminate the above-mentioned troubles, and the purpose is to perform a first exposure process for copying a master mask pattern onto a mask original plate, a printing process for coloring the exposed resist layer, a second exposure process, and a resist This is accomplished by providing a method for manufacturing a photomask characterized by including a layer development step and a metal layer etching step.
以下図面を用いて本発明を説明する。 The present invention will be explained below using the drawings.
図は本発明の一実施例におけるホトマスク製造
工程説明図であり、以下工程順に従つて説明す
る。 The drawings are explanatory diagrams of photomask manufacturing steps in one embodiment of the present invention, and the steps will be explained in the following order.
ａ図は第一次露光工程であり、基板１例えばガ
ラス基板にメタル層２、例えばクロームをスパツ
タリング又は蒸着して膜成し、その上にポジ用レ
ジスト層３を形成してなるマスク原板４とマスタ
ー・マスク５を重ねて露光する。即ち、マスタ
ー・マスク５の開口部に露光するレジスト層３′
に感光し、該感光レジスト層３′は、広く知られ
ている如く、マイナスにコロナ帯電される。 Figure a shows the first exposure step, in which a metal layer 2, for example chrome, is formed on a substrate 1, for example a glass substrate, by sputtering or vapor deposition, and a mask original plate 4 is formed on which a positive resist layer 3 is formed. The master mask 5 is overlapped and exposed. That is, the resist layer 3' exposed to the opening of the master mask 5
As is widely known, the photoresist layer 3' is negatively charged with corona.
ｂ図は前記感光帯電レジスト層３′表面を着色
する印刷工程である。 Figure b shows a printing process for coloring the surface of the photosensitive charged resist layer 3'.
即ち、第一次露光後のレジスト層３全面には、
プラスに荷電したインク例えばクローム等の有色
磁性粉又は顔粉等を混合した着色磁性粉を散布
し、適当角度傾けるなどして、帯電レジスト層
３′上のインク６以外を除去する。然る後、必要
に応じて適宜温度例えば100℃程度に加熱して、
レジスト層３′上のインク６を定着させる。 That is, on the entire surface of the resist layer 3 after the first exposure,
A positively charged ink such as colored magnetic powder such as chrome or colored magnetic powder mixed with face powder is sprayed and tilted at an appropriate angle to remove ink other than the ink 6 on the charged resist layer 3'. After that, if necessary, heat it to an appropriate temperature, for example, about 100℃,
The ink 6 on the resist layer 3' is fixed.
ｃ図は第二次露光工程を示す。この際、前記イ
ンク６は光を遮り帯電レジスト層３′を保護する
がその他のレジスト層３を感光させる。 Figure c shows the second exposure process. At this time, the ink 6 blocks light and protects the charged resist layer 3', but exposes the other resist layers 3 to light.
ｄはレジスト層３の現像工程であり、従来手法
によつて行なわれる。その結果、インク６に覆わ
れた帯電レジスト層３′以外のレジスト層３は溶
解除去される。 d is a developing step for the resist layer 3, which is carried out by a conventional method. As a result, the resist layer 3 other than the charged resist layer 3' covered with the ink 6 is dissolved and removed.
ｅはメタル層２のエツチング工程であり、従来
手法によつて行なわれる。その結果、帯電レジス
ト層３′に覆われたメタル層２′以外のメタル層２
は溶解除去される。 E is an etching step for the metal layer 2, which is performed by a conventional method. As a result, the metal layer 2 other than the metal layer 2' covered with the charged resist layer 3'
is dissolved and removed.
ｆ図は残置されたインク６及び帯電レジスト層
３′の除去工程を示す。 Figure f shows the process of removing the remaining ink 6 and charged resist layer 3'.
以上の工程を経てネガ形コピー・マスクが完成
する。 Through the above steps, a negative copy mask is completed.
以上説明したように、本発明によるホトマスク
は、ポジ用レジスト剤を使用したマスク原板を使
用して、ネガ形コピー・マスクを作製することが
でき、従来ポジ用及びネガ用レジスト剤を使い分
けていた煩わしさから解放された効果は大きい。 As explained above, with the photomask according to the present invention, a negative copy mask can be produced using a mask original plate using a positive resist agent, and conventionally, positive and negative resist agents were used separately. The effect of being freed from troubles is great.
図は本発明の一実施例におけるホトマスク製造
工程説明図。
１……基板、２，２′……メタル層、３，３′…
…レジスト層、４……マスク原板、５……マスタ
ー・マスク。
The figure is an explanatory diagram of a photomask manufacturing process in one embodiment of the present invention. 1... Substrate, 2, 2'... Metal layer, 3, 3'...
...Resist layer, 4...Mask original plate, 5...Master mask.
Claims (1)
スクを製造する方法において、基板上に、順次、
メタル層とポジ用レジスト層を形成したマスク原
板に、前記マスター・マスクのパターンを複写す
る第一次露光工程と露光レジスト層を着色する印
刷工程と第二次露光工程とレジスト層現像工程と
メタル層エツチング工程を含むことを特徴とした
ホトマスクの製造方法。1. In a method of manufacturing a negative copy mask using a master mask, sequentially,
A first exposure step of copying the pattern of the master mask onto a mask original plate on which a metal layer and a positive resist layer are formed, a printing step of coloring the exposed resist layer, a second exposure step, a resist layer development step, and a metal A method for manufacturing a photomask characterized by including a layer etching step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP365179A JPS5595951A (en) | 1979-01-16 | 1979-01-16 | Production of photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP365179A JPS5595951A (en) | 1979-01-16 | 1979-01-16 | Production of photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5595951A JPS5595951A (en) | 1980-07-21 |
| JPS62492B2 true JPS62492B2 (en) | 1987-01-08 |
Family
ID=11563369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP365179A Granted JPS5595951A (en) | 1979-01-16 | 1979-01-16 | Production of photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595951A (en) |
-
1979
- 1979-01-16 JP JP365179A patent/JPS5595951A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5595951A (en) | 1980-07-21 |
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