JPS6250194B2 - - Google Patents
Info
- Publication number
- JPS6250194B2 JPS6250194B2 JP54131484A JP13148479A JPS6250194B2 JP S6250194 B2 JPS6250194 B2 JP S6250194B2 JP 54131484 A JP54131484 A JP 54131484A JP 13148479 A JP13148479 A JP 13148479A JP S6250194 B2 JPS6250194 B2 JP S6250194B2
- Authority
- JP
- Japan
- Prior art keywords
- coating
- photoresist
- liquid
- coating liquid
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は回転塗布方法および回転塗布装置に関
し、主として半導体装置の製造工程の一つである
ホトエツチング工程において、半導体素材基板上
に効率良く感光性樹脂(以下ホトレジストと称
す)膜を均一に形成するとともに、自動化も容易
なホトレジストの塗布方法及び塗布装置を提供す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a spin coating method and a spin coating device, and mainly relates to a spin coating method and a spin coating device for efficiently coating a photosensitive resin (hereinafter referred to as photoresist) on a semiconductor material substrate mainly in a photoetching process which is one of the manufacturing processes of semiconductor devices. The present invention provides a photoresist coating method and coating device that can form a uniform film and can be easily automated.
従来の一般的なホトレジスト塗布方法およびそ
の装置の概略構造を第1図の斜視略図で説明す
る。 A conventional general photoresist coating method and a schematic structure of its apparatus will be explained with reference to the schematic perspective view of FIG.
ホトレジスト膜を形成せんとする素材の半導体
基板(以下単に基板と称す)1は塗布器(以下ス
ピンナーと称す)の回転ステージ2上に真空吸着
などの方法で設置固定され、ホトレジスト供給槽
3に連結された滴下ノズル4より少量のホトレジ
スト5が基板1上に滴下供給される。なお、ホト
レジストの滴下供給は、上記以外に注射器等を用
いる方法も一部では使用されている。しかる後回
転ステージ2は結合した軸6を介して、モーター
7を高速回転させることによつて、基板1上のホ
トレジスト5を遠心力により基板1表面上に塗布
する。 A semiconductor substrate (hereinafter simply referred to as a substrate) 1 of the material on which a photoresist film is to be formed is installed and fixed on a rotary stage 2 of an applicator (hereinafter referred to as a spinner) by a method such as vacuum suction, and connected to a photoresist supply tank 3. A small amount of photoresist 5 is dripped onto the substrate 1 from the dripping nozzle 4 . Note that, in addition to the method described above, a method using a syringe or the like is also used for dropping photoresist. Thereafter, the rotation stage 2 rotates the motor 7 at high speed via the connected shaft 6, thereby applying the photoresist 5 on the substrate 1 onto the surface of the substrate 1 by centrifugal force.
この従来方式の欠点は、
(1) 回転により基板表面より離脱させられた余剰
ホトレジストの四散を防ぐため隔周壁8を設け
る必要があり、この隔周壁8を設けた場合、基
板表面より離脱したホトレジストは壁面で反射
し、その一部は半硬化状態のゲル状微粒となつ
て再び基板1の表面上に落下し、均質な塗布膜
の形成を阻害する。特に近年の如く集積回路装
置の高密度化、高集積度化を計る際には、ホト
レジスト塗布膜の均質化は重要な課題となり、
上記の如き不均質の塗布膜はパターン崩れなど
の不良の主因となるものである。 The disadvantages of this conventional method are: (1) It is necessary to provide a partition wall 8 to prevent excess photoresist removed from the substrate surface due to rotation from scattering; is reflected by the wall surface, and a part of it becomes semi-hardened gel-like particles and falls onto the surface of the substrate 1 again, inhibiting the formation of a homogeneous coating film. Particularly in recent years, when attempting to increase the density and integration of integrated circuit devices, homogenization of the photoresist coating film has become an important issue.
The non-uniform coating film as described above is the main cause of defects such as pattern collapse.
(2) ホトレジストの滴下供給を第1図の如く供給
槽3より細管9で滴下ノズル4に供給する方式
では、連続使用の場合にはほぼ問題はないが、
間歇使用時には滴下ノズル4の部分に残留する
ホトレジストは少量となるため、外囲条件の影
響で粘度が上昇するなどの粘度変化を生じせし
めやすく、また、ノズル先端部におけるホトレ
ジストの硬化など、ホトレジストの品質の維持
管理が困難である。(2) With the method of supplying photoresist dropwise from the supply tank 3 to the droplet nozzle 4 through the thin tube 9 as shown in Figure 1, there is almost no problem in continuous use;
When used intermittently, only a small amount of photoresist remains in the dripping nozzle 4, which tends to cause viscosity changes such as an increase in viscosity due to the influence of the surrounding conditions.In addition, the photoresist may harden at the nozzle tip. Difficult to maintain quality.
(3) また注射器等を用いた場合には、操作性およ
びホトレジストの実使用量に対するロス量の比
が高くなることは周知のことである。(3) Furthermore, it is well known that when a syringe or the like is used, the operability and the ratio of the loss amount to the actual amount of photoresist used are high.
本発明はこのような問題に鑑み、基板を下向き
に設置して塗布液面と対向させ、塗布液中に設置
した噴射口から塗布液を噴射することを特徴と
し、従来の塗布法の欠陥を解消したもので以下本
発明をその実施例によつて詳細に説明する。 In view of these problems, the present invention is characterized in that the substrate is placed facing downward to face the surface of the coating liquid, and the coating liquid is sprayed from an injection port installed in the coating liquid, thereby overcoming the defects of the conventional coating method. The present invention will now be described in detail by way of examples.
第2図は本発明の一実施例にかかる回転塗布装
置の基本構成を示すもので、これを用いてこの装
置ならびに回転塗布方法を説明する。この装置に
おいて、塗布液例えばホトレジスト501を溜置
する槽11内には第2図に示す如く噴射用配管1
3が設けてある。また、噴射用配管は弁15を介
して加圧装置(図示せず)例へば高圧ガス発生装
置などに結合してある。液室12にホトレジスト
501を溜置しておき噴射用配管に高圧ガスを送
り、ホトレジストを噴射する。圧力を調節たとえ
ば弱くすることにより上記液面を一部凸出状に、
また強くすることにより液面より上方に液滴を噴
射させることができる。ホトレジスト槽11の直
上には、回転ステージ17を液面16に対向した
状態(通常のスピンナの回転ステージを倒立させ
た状態)で設けておき、同回転ステージ17は主
軸18に結合してある。主軸18の他端には主軸
18および回転ステージ17を上下動させるため
の摺動機構(図示せず)に結合すると共に、主軸
18の一部にもモータ701の回転力を回転ステ
ージ17に附与伝達する摺動式回転力伝達機構2
0,20′が、ギアあるいはプーリなどの機構に
よつて構成してある。即ち上記の機構を備へるこ
とにより、主軸の一端に結合した回転ステージ
は、回転しながらホトレジスト液面16との相対
位置が変化する構造が形成される。 FIG. 2 shows the basic configuration of a spin coating device according to an embodiment of the present invention, and this device and spin coating method will be explained using this figure. In this apparatus, as shown in FIG.
3 is provided. The injection pipe is connected via a valve 15 to a pressurizing device (not shown), such as a high-pressure gas generator. Photoresist 501 is stored in the liquid chamber 12, and high pressure gas is sent to the injection piping to inject the photoresist. By adjusting the pressure, for example, making it weaker, the liquid level can be made partially convex,
Also, by increasing the strength, droplets can be jetted above the liquid surface. A rotary stage 17 is provided directly above the photoresist tank 11 in a state facing the liquid level 16 (a state in which the rotary stage of a normal spinner is inverted), and the rotary stage 17 is coupled to a main shaft 18. The other end of the main shaft 18 is connected to a sliding mechanism (not shown) for moving the main shaft 18 and the rotation stage 17 up and down, and the rotational force of the motor 701 is also applied to a part of the main shaft 18 to the rotation stage 17. Sliding rotational force transmission mechanism 2
0 and 20' are constructed by mechanisms such as gears or pulleys. That is, by providing the above mechanism, a structure is formed in which the rotation stage connected to one end of the main shaft changes its relative position with respect to the photoresist liquid level 16 while rotating.
上記の如き構成において、素材基板たとえばシ
リコン半導体基板101の被塗布面を下面にして
基板101を回転ステージ17に真空吸着法など
の手法で固着した後、素材基板101及び回転ス
テージ17を主軸18の他端に設けた摺動機構に
より、ホトレジスト液面16に近接した位置
()に設置した、噴射用配管13に加圧ガスを
導入し、ホトレジストを噴射し、素材基板101
表面に付着させる。 In the above configuration, after fixing the substrate 101 to the rotary stage 17 with the surface to be coated of the material substrate 101 facing downward, the material substrate 101 and the rotary stage 17 are attached to the main shaft 18. Using a sliding mechanism provided at the other end, pressurized gas is introduced into the injection pipe 13 installed at a position () close to the photoresist liquid level 16, and the photoresist is injected onto the material substrate 101.
Adhere to the surface.
次に加圧ガスの圧力を減じホトレジストの噴射
を停止し、モータ701により回転ステージ17
を回転させるとともに、主軸18に結合した摺動
機構(図示せず)により回転ステージ17を位置
()まで引上げて素材基板表面上(第2図では
下方向面である)に、ホトレジストの塗布膜を形
成する。 Next, the pressure of the pressurized gas is reduced to stop the injection of photoresist, and the rotation stage 17 is driven by the motor 701.
At the same time, the rotating stage 17 is pulled up to position ( ) by a sliding mechanism (not shown) connected to the main shaft 18, and a photoresist coating film is applied onto the surface of the material substrate (the downward surface in FIG. 2). form.
この第2図に示すスピンナーを用いたホトレジ
スト塗布法では、回転開始直後の遠心力により、
基板101の表面より離脱した液状態を保持した
ホトレジストの大半は、ホトレジスト液室12内
に回収され、さらに、その後回転が進行し該基板
上に該略塗布膜が形成された後に離脱した半硬化
状態でゲル状の再使用が不可能な余剰レジスト
は、位置()において基板より離脱するため外
囲槽21内に分離回収される。したがつて従来の
如く、素材基板面に滴下したホトレジストの大半
が、塗布皮膜として寄与せず余剰ホトレジストと
して廃棄されるのに比較して、第2図の装置によ
ればホトレジストの使用効率が大巾に改善され
る。 In the photoresist coating method using the spinner shown in Fig. 2, centrifugal force immediately after the start of rotation causes
Most of the photoresist that has left the surface of the substrate 101 and remains in a liquid state is collected into the photoresist liquid chamber 12, and the semi-cured photoresist that has left after the rotation progresses and the approximately coating film is formed on the substrate. The excess resist, which is in a gel state and cannot be reused, is separated from the substrate at position ( ) and is therefore separated and collected in the surrounding tank 21 . Therefore, compared to conventional methods in which most of the photoresist dropped onto the surface of the material substrate does not contribute to the coating film and is discarded as surplus photoresist, the apparatus shown in Figure 2 uses the photoresist more efficiently. It will be greatly improved.
また半硬化状態のゲル状微粒が周壁面で反射し
素材基板の塗布膜面上に落下し、塗布膜面の平滑
度を損なう従来の問題については、本発明では塗
布膜面は下方向面であり、塗布膜面上へのゲル状
微粒の落下再付着は起りえず均質な塗布膜がえれ
らる。 In addition, to solve the conventional problem that semi-hardened gel particles reflect on the peripheral wall surface and fall onto the coated film surface of the material substrate, impairing the smoothness of the coated film surface, in the present invention, the coated film surface is directed downward. This prevents gel-like particles from falling and re-depositing onto the surface of the coating film, resulting in a homogeneous coating film.
以上のように本発明によれば均質な塗布液膜の
形成を行うことができ、レジストの使用効率の大
巾な向上をはかることができる。 As described above, according to the present invention, a homogeneous coating liquid film can be formed, and the efficiency of resist use can be greatly improved.
次に本発明の効果をさらに高めるための塗布装
置の他の実施例を第3図によつて説明する。構造
は第3図の断面略図に示す如く、第2図の実施例
のホトレジスト液槽の外に外囲21を設けた構造
で外囲槽21の上部には可動遮蔽板22を有して
いる。回転ステージ17とモータ19を結合する
主軸18の上下摺動時(結合機構、摺動機構は図
示せず)、即ち回転ステージ17が位置()か
ら位置()まで移動する間は、可動遮蔽板22
は開放状態を保持し、回転ステージ17及び同ス
テージに固着された素材基板101の摺動移動を
妨げないが、回転ステージ17が位置()及び
()に存在する際には、主軸18の貫通部23
以外を遮蔽し、槽内24をほぼ密室雰囲気とする
構造なる。 Next, another embodiment of the coating device for further enhancing the effects of the present invention will be described with reference to FIG. As shown in the schematic cross-sectional view of FIG. 3, the structure is such that an outer enclosure 21 is provided outside the photoresist liquid tank of the embodiment shown in FIG. . When the main shaft 18 that connects the rotary stage 17 and the motor 19 slides up and down (the coupling mechanism and sliding mechanism are not shown), that is, while the rotary stage 17 moves from position () to position (), the movable shield plate 22
maintains an open state and does not impede the sliding movement of the rotation stage 17 and the material substrate 101 fixed to the stage. However, when the rotation stage 17 is in positions () and (), Part 23
The structure is such that the interior of the tank 24 is kept in a nearly closed room atmosphere.
またホトレジスト液室11と外囲槽21が形成
する外囲室25には、ホトレジスト液12の希釈
液26(或は希釈液と類似組成液)を溜置してお
くことにより、槽内24は同液の蒸発ガスによ
り、希釈液組成の雰囲気が保持され、ホトレジス
ト液室11内のホトレジスト液12の液面16に
おける組成変化(硬化)を抑制することができ
る。またこの蒸発ガスの存在により回転塗布が同
ガス雰囲気中で行なわれ、塗布雰囲気が制御され
るなどの効果により、均質な塗布膜を再現性良く
得ることが出来る。 In addition, by storing a diluted solution 26 of the photoresist solution 12 (or a solution with a similar composition to the diluted solution) in the envelope chamber 25 formed by the photoresist solution chamber 11 and the envelope tank 21, the interior of the tank 24 is The evaporated gas of the liquid maintains the atmosphere of the diluted liquid composition, making it possible to suppress compositional changes (hardening) at the liquid level 16 of the photoresist liquid 12 in the photoresist liquid chamber 11. Further, due to the presence of this evaporated gas, spin coating is performed in the same gas atmosphere, and a homogeneous coating film can be obtained with good reproducibility due to effects such as controlling the coating atmosphere.
本装置により、ホトレジスト塗布を行うプロセ
スは下記の如くなる。まづ回転ステージ位置
()において回転ステージ17に対しシリコン
半導体基板101を真空吸着法などで固着させ
る。この時可動遮幣板22は完全な閉塞状態にあ
り、槽内24は密閉雰囲気を保持している。次に
可動遮幣板22を一時開放し、基板101を固着
させた回転ステージ17を、摺動機構(図示せ
ず)により位置()まで下降させた後、可動遮
幣板22を主軸貫通部23の開孔部を残して、ほ
ぼ閉塞の状態まで遮幣する。 The process of applying photoresist using this apparatus is as follows. First, the silicon semiconductor substrate 101 is fixed to the rotation stage 17 at the rotation stage position ( ) by vacuum suction or the like. At this time, the movable bulletproof plate 22 is in a completely closed state, and the inside of the tank 24 maintains a sealed atmosphere. Next, the movable bulletproof plate 22 is temporarily opened, and the rotary stage 17 to which the substrate 101 is fixed is lowered to position () by a sliding mechanism (not shown), and then the movable bulletproof plate 22 is moved to the main shaft penetrating part. The hole is sealed until it is almost closed, leaving an opening of 23.
その後、弁15により加圧ガスを導入しホトレ
ジストを噴射し、基板表面にホトレジストを付着
させる。次に、2図の実施例1の場合と同様に摺
動機構により回転ステージ17を位置()まで
移動させながら、モータ701により回転力を付
勢し、位置()において基板101表面上に、
ホトレジストの回転塗布皮膜を形成させる。 Thereafter, pressurized gas is introduced through the valve 15 and photoresist is sprayed to adhere the photoresist to the surface of the substrate. Next, as in the case of Embodiment 1 shown in FIG. 2, the rotating stage 17 is moved to position () by the sliding mechanism, and rotational force is applied by the motor 701, so that the rotation stage 17 is placed on the surface of the substrate 101 at position ().
A spin coating film of photoresist is formed.
回転塗布終了後は、再度可動遮幣板22を開
き、回転ステージ17を槽外の位置()まで移
動させホトレジスト膜の形成を終えた素材基板1
01を取り外して塗布プロセスは終了する。 After the rotational coating is completed, the movable shielding plate 22 is opened again, and the rotation stage 17 is moved to the position () outside the bath, and the material substrate 1 on which the photoresist film has been formed is moved.
01 is removed and the coating process ends.
なお、回転ステージを位置()より位置
()に摺動させる際の摺動速度を遅くするとと
もに、摺動始直後は低速回転とし、位置()に
到達後は高速回転として、回転速度を変えて塗布
する方式を採用すると、第1の回転速度(低速
度)域ではホトレジストを基板表面に拡げると共
に、液状の余剰ホトレジストはホトレジスト液室
11内回収され、位置()での高速回転域では
基板表面に均一にホトレジスト膜が形成されるこ
とになり、よりホトレジストの使用効率を高める
ことができる。 In addition, the sliding speed when sliding the rotary stage from position () to position () is slowed down, and the rotation speed is changed so that it rotates at a low speed immediately after sliding starts, and rotates at a high speed after reaching position (). If a coating method is adopted, in the first rotational speed (low speed) region, the photoresist is spread over the substrate surface, and excess liquid photoresist is collected in the photoresist liquid chamber 11, and in the high rotational speed region at position (), the photoresist is spread on the substrate surface. A photoresist film is uniformly formed on the surface, and the efficiency of using the photoresist can be further improved.
また、塗布面を下向きにしているため、ホトレ
ジストの付着量が多量あるいは低速回転の塗布を
行なつても、従来例と異なりホトレジストの裏面
へのまわり込みがなくなる。 Furthermore, since the coated surface faces downward, even if a large amount of photoresist is deposited or coating is performed at low speed, unlike the conventional example, the photoresist will not wrap around to the back surface.
本実施例では半導体基板上に対するホトレジス
ト膜の形成を例としているが、本塗布装置は上記
のホトレジストの塗布以外に、粘度の高い液状物
質を用いて塗布被膜を形成する用途であれば、本
実施例同様に容易に均質な被膜を形成することが
できる。 In this example, the formation of a photoresist film on a semiconductor substrate is taken as an example, but this coating apparatus can be used in addition to the above-mentioned photoresist coating if it is used to form a coating film using a liquid substance with high viscosity. As in the example, a homogeneous film can be easily formed.
以上のように、本発明の方法、装置を用いたホ
トレジスト塗布法では、ホトレジストの塗布面が
下面を向いているため、周壁面で反射した余剰レ
ジストのゲル状小粒の塗布面上への落下がなく、
したがつてそれらの雑物によるホトレジストの表
面平滑度不良、これにもとずくパターン崩れなど
の工程不良が防止される。さらに本発明によれば
液状の余剰レジストはレジスト液室に回収される
ため、ホトレジストの無駄を低減することに大な
る効果を発揮することができる。また、本発明で
は噴射口を液中に設置するため間歇使用時でも従
来の例と異なり、噴射口内のホトレジストの粘度
変化が生じず絶えず均質なホトレジストを塗布で
きる。 As described above, in the photoresist coating method using the method and apparatus of the present invention, since the coated surface of the photoresist faces downward, the gel-like particles of excess resist reflected from the peripheral wall surface do not fall onto the coated surface. Without,
Therefore, process defects such as poor surface smoothness of the photoresist and pattern collapse due to these impurities are prevented. Further, according to the present invention, excess liquid resist is collected in the resist liquid chamber, so that it is possible to exhibit a great effect in reducing waste of photoresist. Further, in the present invention, since the injection port is installed in the liquid, unlike the conventional example, even when used intermittently, the viscosity of the photoresist in the injection port does not change, and a uniform photoresist can be constantly applied.
第1図は従来のホトレジスト塗布装置の斜視略
図、第2図、第3図はそれぞれ本発明の各実施例
にかかるホトレジスト塗布装置の断面構造図であ
る。
11……ホトレジスト槽、ホトレジスト液室、
13……噴射用配管、17……回転ステージ、1
8……主軸、20,20′……回転力伝達機構、
21……外囲槽、25……外囲室、26……希釈
液、101……素材基板、501……ホトレジス
ト。
FIG. 1 is a schematic perspective view of a conventional photoresist coating apparatus, and FIGS. 2 and 3 are sectional structural views of photoresist coating apparatuses according to embodiments of the present invention, respectively. 11...Photoresist tank, photoresist liquid chamber,
13...Injection piping, 17...Rotation stage, 1
8...Main shaft, 20, 20'...Rotational force transmission mechanism,
21... Surrounding tank, 25... Surrounding chamber, 26... Diluent, 101... Material substrate, 501... Photoresist.
Claims (1)
に塗布液を噴射付着させたのち、上記基板を回転
させて上記被着面に付着した塗布液の被膜を形成
することを特徴とする回転塗布方法。 2 被塗布面を下向きにした状態で素材基板を回
転させることを特徴とする特許請求の範囲第1項
に記載の回転塗布方法。 3 被膜形成を、塗布液を希釈する雰囲気ガス中
で行なうことを特徴とする特許請求の範囲第1項
に記載の回転塗布方法。 4 素材基板が半導体基板、被膜がフオトレジス
ト被膜となることを特徴とする特許請求の範囲第
1項に記載の回転塗布方法。 5 塗布液を溜置する液室中に設置した噴射用配
管と、上記塗布液面上に、素材基板の塗布被膜形
成面が上記塗布液面に対向するように設置する回
転台と、この回転台を回転させる回転駆動機機構
とを備え、上記噴射用配管内に圧力を付与して上
記塗布液を噴射し、上記塗布液を塗布被膜形成面
に付着させることを特徴とする回転塗布装置。 6 塗布液を溜置する液室中に設置した噴射用配
管と、上記塗布液面上に、素材基板の塗布被膜形
成面が上記塗布液面に対向するように設置する回
転台と、この回転台を回転させる回転駆動機構
と、上記塗布液を溜置する液室の外周に設けた、
塗布液の希釈液を溜置した外周槽と、この外周槽
の上部に開閉可能に設けた遮蔽板とを備え、上記
噴射用配管内に圧力を付与して上記塗布液を噴射
し、上記塗布液を塗布被膜形成面に付着させるこ
とを特徴とする回転塗布装置。[Scope of Claims] 1. Spraying and depositing a coating liquid on the substrate with the surface to be coated of the material substrate facing downward, and then rotating the substrate to form a film of the coating liquid adhered to the surface to be coated. A rotary coating method characterized by: 2. The spin coating method according to claim 1, wherein the material substrate is rotated with the surface to be coated facing downward. 3. The spin coating method according to claim 1, wherein the coating is formed in an atmospheric gas that dilutes the coating solution. 4. The spin coating method according to claim 1, wherein the material substrate is a semiconductor substrate and the coating is a photoresist coating. 5. An injection pipe installed in the liquid chamber for storing the coating liquid, a rotary table installed above the coating liquid surface so that the coated film forming surface of the material substrate faces the coating liquid surface, and A rotary coating device comprising a rotary drive mechanism for rotating a base, applying pressure in the spraying pipe to spray the coating liquid, and causing the coating liquid to adhere to the surface on which the coating film is to be formed. 6. An injection pipe installed in the liquid chamber for storing the coating liquid, a rotary table installed above the coating liquid surface so that the coated film forming surface of the material substrate faces the coating liquid surface, and A rotation drive mechanism for rotating the table, and a rotation drive mechanism provided on the outer periphery of the liquid chamber in which the coating liquid is stored.
It is equipped with an outer peripheral tank in which a diluted coating solution is stored and a shielding plate provided on the upper part of the outer tank so that it can be opened and closed. A rotary coating device characterized by attaching a liquid to a surface on which a coating film is to be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13148479A JPS5656261A (en) | 1979-10-11 | 1979-10-11 | Method and apparatus for rotary coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13148479A JPS5656261A (en) | 1979-10-11 | 1979-10-11 | Method and apparatus for rotary coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5656261A JPS5656261A (en) | 1981-05-18 |
| JPS6250194B2 true JPS6250194B2 (en) | 1987-10-23 |
Family
ID=15059052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13148479A Granted JPS5656261A (en) | 1979-10-11 | 1979-10-11 | Method and apparatus for rotary coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656261A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04504377A (en) * | 1989-04-05 | 1992-08-06 | オー・シー・ジー・マイクロエレクトロニツク・マテリアルズ・インコーポレイテツド | Method of coating a photoresist composition onto a substrate |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208832A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Tokyo Electronics Co Ltd | Applicator |
| JPH0669019B2 (en) * | 1984-03-12 | 1994-08-31 | 株式会社ニコン | Semiconductor manufacturing equipment |
| US4590094A (en) * | 1984-10-29 | 1986-05-20 | International Business Machines Corporation | Inverted apply using bubble dispense |
| JPH03272140A (en) * | 1990-03-22 | 1991-12-03 | Fujitsu Ltd | Chemical treater for semiconductor substrate |
| JP4812704B2 (en) * | 2007-07-10 | 2011-11-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP2022098245A (en) * | 2020-12-21 | 2022-07-01 | 株式会社ディスコ | Spin coater and spin coating method |
-
1979
- 1979-10-11 JP JP13148479A patent/JPS5656261A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04504377A (en) * | 1989-04-05 | 1992-08-06 | オー・シー・ジー・マイクロエレクトロニツク・マテリアルズ・インコーポレイテツド | Method of coating a photoresist composition onto a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5656261A (en) | 1981-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5571560A (en) | Proximity-dispensing high-throughput low-consumption resist coating device | |
| US20010035125A1 (en) | Coater having controllable pressurized process chamber for semiconductor processing | |
| JPS6250194B2 (en) | ||
| US6761930B2 (en) | Method of coating solution on substrate surface using a slit nozzle | |
| JPS6214092B2 (en) | ||
| US4528934A (en) | Thin-film coating apparatus | |
| US6576055B2 (en) | Method and apparatus for controlling air over a spinning microelectronic substrate | |
| US6616758B2 (en) | Method and apparatus for spin coating | |
| JPS6085524A (en) | Resist applying method | |
| JPH04332116A (en) | Spin coater | |
| JP3800291B2 (en) | Coating method and coating apparatus | |
| JPS591385B2 (en) | Spin coating method and device | |
| JP2002134388A (en) | Resist discharge port cleaning method and apparatus, and resist coating method and apparatus | |
| JPH0226668A (en) | Coating apparatus | |
| JPH0132357Y2 (en) | ||
| JPH08187458A (en) | Spin coating device | |
| JPH0338821A (en) | Method and apparatus for coating | |
| JPH0241895B2 (en) | ||
| JPS60139363A (en) | Exhaustion control apparatus of automatic resist coating apparatus | |
| JPH04340217A (en) | Resist coating method | |
| JPS581144A (en) | Method for coating photoresist | |
| JPH05123632A (en) | Liquid coating substance coating method | |
| JPH0817700A (en) | Resist coating method and resist coating apparatus | |
| JPS6125430B2 (en) | ||
| JPH0444213A (en) | Manufacture of semiconductor device |