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JPS6256664B2 - - Google Patents
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JPS6256664B2 - - Google Patents

Info

Publication number
JPS6256664B2
JPS6256664B2 JP55184737A JP18473780A JPS6256664B2 JP S6256664 B2 JPS6256664 B2 JP S6256664B2 JP 55184737 A JP55184737 A JP 55184737A JP 18473780 A JP18473780 A JP 18473780A JP S6256664 B2 JPS6256664 B2 JP S6256664B2
Authority
JP
Japan
Prior art keywords
conductor
package
view
semiconductor
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55184737A
Other languages
Japanese (ja)
Other versions
JPS57107059A (en
Inventor
Norikuni Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55184737A priority Critical patent/JPS57107059A/en
Publication of JPS57107059A publication Critical patent/JPS57107059A/en
Publication of JPS6256664B2 publication Critical patent/JPS6256664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43Layouts of interconnections
    • H10W20/432Layouts of interconnections comprising crossing interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

【発明の詳細な説明】 本発明は半導体パツケージ、特に集積回路
(IC)に使用される半導体パツケージの構造に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of semiconductor packages, particularly semiconductor packages used in integrated circuits (ICs).

近年、電子機器を小型にできると共に、スイツ
チングが高速となるなど電気特性が改善されるた
め、ICは高集積化されて、LSI,超LSIなどが開
発されてきた。しかし、この様に集積度が高度化
すれば、半導体集積回路チツプ(ICチツプ)を
収容する半導体パツケージは、外部導出端子数が
増加して大型となり、パツケージは当然多層構造
となるものの、内部に設ける導電層パターンは細
く長くなつて、そのインダクタンスが増加する傾
向にある。
In recent years, as electronic devices have become smaller and their electrical characteristics have been improved, such as faster switching, ICs have become more highly integrated and LSIs and ultra-LSIs have been developed. However, as the degree of integration increases in this way, semiconductor packages that house semiconductor integrated circuit chips (IC chips) become larger with an increased number of external terminals, and although the packages naturally have a multilayer structure, the internal The conductive layer patterns provided tend to become thinner and longer, and their inductance tends to increase.

一方、高集積化されたICチツプには多数の素
子が設けられて、消費電力も増えるが、例えば論
理回路において、オフバツフア回路などは過渡時
に電流が異常に多く流れ、又、外部にキヤパシタ
があればオン時に蓄積容量が放電して、大きさ電
流が流れる。そしてこれらの過渡電流は、すべて
接地部に集中し、その時期接地レベルが大きく変
動して、細く長い導電層パターンのためにノイズ
が生ずる。この様にして発生したノイズは、信号
に悪影響を与えて、極端な場合は誤動作を惹き起
こす。又、電源部から供給される電流も同じくオ
ン・オフの過渡時に集中するため、電源レベルが
変動して、同様に発生するノイズが信号に悪影響
を及ぼす。
On the other hand, highly integrated IC chips are equipped with a large number of elements, which increases power consumption. For example, in logic circuits, off-buffer circuits, etc., have abnormally large currents flowing during transients, and also have external capacitors. When the battery is turned on, the storage capacitor discharges and a large current flows. All of these transient currents are concentrated in the ground portion, and during this period the ground level fluctuates greatly, causing noise due to the thin and long conductive layer pattern. The noise generated in this manner has an adverse effect on the signal, and in extreme cases may cause malfunction. In addition, since the current supplied from the power supply unit also concentrates during on-off transitions, the power supply level fluctuates and similarly generated noise adversely affects the signal.

本発明はこの様なノイズの影響を極力少なくし
て、動作を安定させることを目的とし、半導体パ
ツケージの内部にICチツプの底部と側部との全
面を包囲する接地導電体、あるいは接地導電体及
び電源導電体の両導電体が設けられた半導体パツ
ケージを提案するもので、以下図面を参照して詳
細に説明する。
The purpose of the present invention is to reduce the influence of such noise as much as possible and stabilize the operation by providing a grounding conductor or a grounding conductor that surrounds the entire bottom and sides of the IC chip inside the semiconductor package. The present invention proposes a semiconductor package provided with both a conductor and a power supply conductor, which will be described in detail below with reference to the drawings.

高度に集積化されたLSIなどのICチツプは、一
般に信頼性の高いセラミツク製の半導体パツケー
ジ(セラミツクパツケージ)に収納されることが
多く、第1図はその一例の外形斜視図、第2図は
断面図を示している。図において、1はICチツ
プ、2はパツケージに形成した導電配線、3は外
部導出端子、4はボンデングワイヤ、5はICチ
ツプ1がダイス付けされる導電体パターンで、こ
の導電体パターンは多数の導電配線2のうち、1
つ又は2つ程度の導電配線に接続されて、その導
電配線と連結する外部導出の接地端子とつながつ
ている。しかし、図示の様に、導電配線2は大型
化したパツケージ内部で、細く長く形成されてい
るために自己インダクタンスが大きくて、上記し
た様に過渡電流のため、接地レベルが変動すれ
ば、信号が伝えられる導電配線はそのノイズに影
響される。一方、ボンデングワイヤー4も細線で
はあるが、比較的短かくて影響されにくい。
Highly integrated IC chips such as LSIs are generally housed in highly reliable ceramic semiconductor packages (ceramic packages). Figure 1 is an external perspective view of one example, and Figure 2 is an example A cross-sectional view is shown. In the figure, 1 is an IC chip, 2 is a conductive wiring formed on the package, 3 is an external lead terminal, 4 is a bonding wire, and 5 is a conductor pattern to which the IC chip 1 is diced. Of the conductive wiring 2, 1
It is connected to one or two conductive wires, and is connected to an external ground terminal connected to the conductive wires. However, as shown in the figure, the conductive wiring 2 is formed long and thin inside the larger package, so it has a large self-inductance, and as mentioned above, due to the transient current, if the ground level fluctuates, the signal will be lost. The conductive wiring that is transmitted is affected by the noise. On the other hand, although the bonding wire 4 is also a thin wire, it is relatively short and is not easily affected.

しかしながら、高集積化すれば半導体パツケー
ジは大きくなつて、導電配線はそれに伴つて細く
長くなるのは避けられぬことであるが、ノイズの
影響を出来る限り小さくする必要がある。第3図
は本発明の一実施例の断面図で、この様にICチ
ツプ1を接地導電体10で囲んだ半導体パツケー
ジの構造とする。即ち、ICチツプ底面をダイス
付けする従来の導電体パターンを含んでICチツ
プを導電ブロツクで包囲し、その露出面の任意位
置に接地ボンデングワイヤーを出来るだけ多く配
線し、しかもかような接地導電体10から外部導
出端子への接続(下記、第4図参照)も信号を伝
達する導電配線2とは別の層に電気抵抗が小さく
なる様に幅広く形成しておく。第4図は第3図に
示した実施例のICチツプ1を収容するキヤビテ
イ部分を拡大した図で、aは平面図、bはその
AA′断面図を示しており、接地導電体10は底部
導電体体11、側部導電体12、及び表出部導電
体13からなり、表出部導電体13には接地ワイ
ヤボンデングが行われる。外部導出端子への接続
は信号を伝える導電配線とは別の下層に幅広い接
続導電体14を形成して、導出させる。そうすれ
ば、外部端子への接続位置は若干異なつて(図示
せず)くるが、外形上問題となることはない。こ
の様なセラミツクパツケージは未焼成セラミツク
シートの所要面に導電/タライズ層を塗布した
り、バイヤホールで上下層を接続するなどして、
多数の未焼成セラミツクシートを積み重ねて焼成
する多層構造であり、容易に上記説明した構造の
接地導電体10を形成することができ、側部導電
体12はキヤビテイ部分の側面に導電メタライズ
層を塗布し、その上に絶縁ペーストを塗布して形
成するが、絶縁ペーストを塗布せず導電メタライ
ズ層のまゝ露出させておいてもかまわない。
However, as semiconductor packages become more highly integrated, it is inevitable that conductive wiring becomes thinner and longer, but it is necessary to minimize the influence of noise. FIG. 3 is a sectional view of one embodiment of the present invention, which has a semiconductor package structure in which an IC chip 1 is surrounded by a ground conductor 10. That is, the IC chip is surrounded by a conductive block, including the conventional conductive pattern that is attached to the bottom of the IC chip, and as many ground bonding wires as possible are routed at arbitrary positions on the exposed surface. The connection from the body 10 to the external lead-out terminal (see FIG. 4 below) is also formed widely in a layer different from the conductive wiring 2 for transmitting signals so as to have a low electrical resistance. FIG. 4 is an enlarged view of the cavity part that accommodates the IC chip 1 of the embodiment shown in FIG.
The grounding conductor 10 is made up of a bottom conductor 11, a side conductor 12, and an exposed conductor 13, and the exposed conductor 13 is bonded with a ground wire. be exposed. Connections to external lead-out terminals are made by forming a wide connection conductor 14 in a lower layer separate from the conductive wiring for transmitting signals. If this is done, the connection position to the external terminal will be slightly different (not shown), but this will not cause any problem in terms of the external appearance. Ceramic packages like this are made by applying a conductive/talizing layer to the required surfaces of an unfired ceramic sheet, or by connecting the upper and lower layers with via holes.
It has a multilayer structure in which a large number of unfired ceramic sheets are stacked and fired, and the ground conductor 10 having the structure described above can be easily formed.The side conductor 12 is formed by coating the side surface of the cavity with a conductive metallized layer. Although it is formed by applying an insulating paste thereon, the conductive metallized layer may be left exposed without applying the insulating paste.

この様にした構造のセラミツクパツケージは、
接地導電体10が広い面積のブロツクであるか
ら、過渡時の接地レベルの変動が吸収されて少な
くなり、又たとえチツプの内部など、ICチツプ
1の収容された接地導電体10の内部で、接地レ
ベルが変つてもパツケージの導電配線にノイズと
して影響することは極めて少なくなる。従つて、
LSIなど半導体装置の信頼性向上に著しく効果あ
るものである。
The ceramic package with this structure is
Since the grounding conductor 10 is a block with a large area, fluctuations in the grounding level during transient times are absorbed and reduced, and even if the grounding conductor 10 in which the IC chip 1 is housed, such as inside the chip, is grounded. Even if the level changes, it is extremely unlikely to affect the conductive wiring of the package as noise. Therefore,
It is extremely effective in improving the reliability of semiconductor devices such as LSI.

又、第5図は本発明にかかるもう一つの実施例
のキヤビテイ部を示し、aは平面図、bはその
BB′断面図で、接地導電体10の他に電源導電体
15をも同様にして形成した構造である。接地導
電体10は上記と同様の構造で、電源導電体15
も底部導電体16、側部導電体17及びワイヤボ
ンデングがなされる表出部導電体18と接地導電
体19とから構成され、側部導電体17は例えば
無数のバイヤホールを林立させる方法で作成さ
れ、又接地導電体10と電源導電体15との交錯
する部分には接触しない様に、導電体を形成して
いない。ICは集積度が高くなる程、供給電流量
は増大するが、この様なパツケージ構造をとれば
過渡時に瞬間的に電流量が増加しても電源導電体
15の容量が大きくなるため、電源レベル(電圧
レベル)の変動も小さくて、そのノイズは減少す
る。又、電源導電体15の内部で変化しても、半
導体パツケージの導電配線への影響は少なくな
る。従つて第5図に示す半導体パツケージは、接
地、電源双方からのノイズを減少させる構造のも
のである。
Moreover, FIG. 5 shows the cavity part of another embodiment according to the present invention, in which a is a plan view and b is a plan view thereof.
The BB' cross-sectional view shows a structure in which, in addition to the ground conductor 10, a power supply conductor 15 is also formed in the same manner. The ground conductor 10 has the same structure as above, and the power conductor 15
It is also composed of a bottom conductor 16, a side conductor 17, an exposed conductor 18 to which wire bonding is performed, and a ground conductor 19. In addition, no conductor is formed in the intersection of the ground conductor 10 and the power supply conductor 15 so as not to contact them. The higher the degree of integration of an IC, the greater the amount of current it can supply; however, with this kind of package structure, even if the amount of current increases momentarily during a transient, the capacity of the power conductor 15 increases, so the power supply level (Voltage level) fluctuations are also small, and the noise is reduced. Furthermore, even if there is a change inside the power supply conductor 15, the effect on the conductive wiring of the semiconductor package is reduced. Therefore, the semiconductor package shown in FIG. 5 is of a structure that reduces noise from both ground and power sources.

以上説明した様に、本発明は信頼性向上に大き
く役立つものであり、ICチツプの集積度が高度
化する程、その効果が著しく現われる発明と言う
ことができる。尚、上記はセラミツクパツケージ
で説明したが、その他の構造にも応用できること
は当然である。
As explained above, the present invention is of great help in improving reliability, and it can be said that the more highly integrated the IC chip is, the more its effects become more apparent. Incidentally, although the above explanation has been made with respect to a ceramic package, it is of course applicable to other structures as well.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は一般の半導体パツケージの外形斜視
図、第2図はその断面図、第3図は本発明にかか
る一実施例の半導体パツケージ断面図、第4図a
及びbはそのキヤビテイ部の平面図と断面図、第
5図a及びbは本発明にかかる他の実施例のキヤ
ビテイ部の平面図と断面図である。図中、1は
ICチツプ、2は半導体パツケージの導電配線、
3は外部導出端子、4はボンデングワイヤー、1
0は接地導電体、11,12,13,14はそれ
ぞれ接地導電体10を構造する底部、側部、表出
部、接続の導電体、15は電源導電体、16,1
7,18,19は同じく電源導電体15を構成す
る底部、側部、表出部、接続の導電体を示してい
る。
FIG. 1 is a perspective view of the external appearance of a general semiconductor package, FIG. 2 is a sectional view thereof, FIG. 3 is a sectional view of a semiconductor package according to an embodiment of the present invention, and FIG. 4 a
5A and 5B are a plan view and a sectional view of the cavity portion thereof, and FIGS. 5A and 5B are a plan view and a sectional view of the cavity portion of another embodiment according to the present invention. In the figure, 1 is
IC chip, 2 is conductive wiring of semiconductor package,
3 is an external lead-out terminal, 4 is a bonding wire, 1
0 is a grounding conductor; 11, 12, 13, and 14 are bottom, side, exposed, and connecting conductors that constitute the grounding conductor 10; 15 is a power supply conductor; 16, 1
Reference numerals 7, 18, and 19 indicate the bottom, side, exposed, and connecting conductors that similarly constitute the power supply conductor 15.

Claims (1)

【特許請求の範囲】 1 半導体集積回路チツプを収納するパツケージ
の内部に、該集積回路チツプの底部と側部との全
面を包囲する接地導電体が設けられたことを特徴
とする半導体パツケージ。 2 半導体集積回路チツプを収納するパツケージ
の内部に、該集積回路チツプの底部と側部との全
面を包囲する電源導電体が更に設けられたことを
特徴とする特許請求の範囲第1項記載の半導体パ
ツケージ。
[Scope of Claims] 1. A semiconductor package, characterized in that a ground conductor is provided inside the package that houses a semiconductor integrated circuit chip, and surrounds the entire bottom and side surfaces of the integrated circuit chip. 2. The package according to claim 1, further comprising a power supply conductor that surrounds the entire bottom and side surfaces of the integrated circuit chip inside the package that houses the semiconductor integrated circuit chip. Semiconductor package.
JP55184737A 1980-12-25 1980-12-25 Semiconductor package Granted JPS57107059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184737A JPS57107059A (en) 1980-12-25 1980-12-25 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184737A JPS57107059A (en) 1980-12-25 1980-12-25 Semiconductor package

Publications (2)

Publication Number Publication Date
JPS57107059A JPS57107059A (en) 1982-07-03
JPS6256664B2 true JPS6256664B2 (en) 1987-11-26

Family

ID=16158474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184737A Granted JPS57107059A (en) 1980-12-25 1980-12-25 Semiconductor package

Country Status (1)

Country Link
JP (1) JPS57107059A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417266A (en) * 1981-08-14 1983-11-22 Amp Incorporated Power and ground plane structure for chip carrier
JPS596563A (en) * 1982-07-05 1984-01-13 Nec Corp Integrated circuit device
JPS6038841A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Semiconductor device
JPS60148148A (en) * 1984-01-13 1985-08-05 Nec Corp semiconductor equipment
JPS6122358U (en) * 1984-07-12 1986-02-08 株式会社東芝 Pin grid array package
JP2978533B2 (en) * 1990-06-15 1999-11-15 株式会社日立製作所 Semiconductor integrated circuit device
JPH06103721B2 (en) * 1990-09-25 1994-12-14 松下電工株式会社 Semiconductor chip carrier
KR100582497B1 (en) * 2004-02-24 2006-05-23 삼성전자주식회사 Memory card with printed circuit board containing electrostatic discharge protection pattern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415663A (en) * 1974-01-10 1979-02-05 Nec Corp Semiconductor device
JPS5185349A (en) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5272169A (en) * 1975-12-12 1977-06-16 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS57107059A (en) 1982-07-03

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