JPS6259473B2 - - Google Patents
Info
- Publication number
- JPS6259473B2 JPS6259473B2 JP55183442A JP18344280A JPS6259473B2 JP S6259473 B2 JPS6259473 B2 JP S6259473B2 JP 55183442 A JP55183442 A JP 55183442A JP 18344280 A JP18344280 A JP 18344280A JP S6259473 B2 JPS6259473 B2 JP S6259473B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- crystal
- hgcdte
- diode
- cadmium telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
本発明は 〜10μｍ波長の近赤外光の検知素
子として高感度な光起電力型のテルル化水銀カド
ミウム・ダイオードの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a highly sensitive photovoltaic mercury cadmium telluride diode as a sensing element for near-infrared light at a wavelength of ~10 μm.
特に、２次元マトリクス・センサー用として、
従来技術では困難であつたｎ型基板表面層にＰ型
小領域をプレナー状に設けるダイオードの製造方
法に関する。 In particular, for two-dimensional matrix sensors,
The present invention relates to a method of manufacturing a diode in which a P-type small region is provided in a planar shape on an n-type substrate surface layer, which has been difficult with conventional techniques.
水銀を過剰に含むテルル化水銀カドミウム（以
下HgCdTeと記す）結晶は、ｎ型導電を示すこと
が知られている。ｎ型HgCdTeウエハーの一部を
Ｐ型に変換する為にはアクセプタ不純物（Cu、
Ag、Au等）を選択拡散して行なうが、これらの
不純物は、いずれも非常に速い拡散速度をもつた
めに、ウエハー表面から、数100μｍ深さ迄容易
に拡散してしまうことと、同時に横方向にも同じ
程度に拡散する結果、２次元画像に対して高分解
能をもつダイオード・マトリクスを形成すること
は殆んど不可能に近い。 It is known that mercury cadmium telluride (hereinafter referred to as HgCdTe) crystal containing an excess of mercury exhibits n-type conductivity. In order to convert part of the n-type HgCdTe wafer to P-type, acceptor impurities (Cu,
This is done by selectively diffusing impurities (Ag, Au, etc.), but since all of these impurities have extremely fast diffusion rates, they can easily diffuse from the wafer surface to a depth of several hundred micrometers, and at the same time, they can cause lateral diffusion. As a result, it is almost impossible to form a diode matrix with high resolution for two-dimensional images.
本発明は上述の欠点に鑑みなされたもので、
Hg過剰のｎ型HgCdTe結晶表面層を、ダイオー
ド・マトリクスを形成する領域のみ選択的に極く
短時間の加熱を施して、Hg不足の状態に変更す
ることにより、その領域をＰ型導電を示すものと
する結果、プレナー型のダイオード・マトリクス
を形成するテルル化水銀カドミウム・ダイオード
の製造方法を提供するものである。 The present invention has been made in view of the above-mentioned drawbacks.
By selectively heating the Hg-excess n-type HgCdTe crystal surface layer for a very short time only in the region forming the diode matrix to change it to an Hg-deficient state, that region exhibits P-type conductivity. As a result, a method of manufacturing a mercury cadmium telluride diode forming a planar diode matrix is provided.
本発明の目的は、ｎ型のテルル化水銀カドミウ
ム結晶に、前記結晶の吸収端波長にほぼ等してか
或はそれよりも短波長の高出力光を選択的に照射
することによつて、晶の照射領域をＰ型変換して
Pn接合を形成することによつて達成される。 The object of the present invention is to selectively irradiate an n-type mercury cadmium telluride crystal with high-output light having a wavelength approximately equal to or shorter than the absorption edge wavelength of the crystal. The irradiated area of the crystal is converted to P type.
This is accomplished by forming a Pn junction.
Hgt−xCdxTe結晶の吸収端波長λｇ（ｘ＝0.23
でλｇ＝３μｍ、ｘ＝0.20でλｇ＝10μｍ）より
も短波長の高出力の光（例えばレーザー光、0.1
〜1joulecm-2程度）を極く短時間（100ns〜１ｍ
ｓ）だけ、製作目的であるダイオード・マトリク
スと同じ形状にパターニングされた光遮蔽マスク
を通して、HgCdTe結晶表面を選択照射すること
によつて、照射領域を短時間だけ温度上昇させ
る。この過程を経過した後、周囲温度にまで戻つ
たその領域は、Hgが高い蒸気圧を有する結果と
して、Hg不足状態となり、導電型がＰ型に変換
される。この結果、照射領域と基板深部側との間
にPn接合が形成され、マトリクス状に照射する
ことにより、ダイオード・マトリクスが形成され
る。光照射は出力、照射時間ともに制御される結
果、Ｐ型に変換する実効的な領域は、照射領域か
ら横方向に広がることはなく、深さ方向にも５〜
10μｍ程度である。この結果、高分解能のイメー
ジ・センサーを形成する上で極めて有利である。 Hg t − x Cd x Te crystal absorption edge wavelength λg (x=0.23
λg = 3 μm at x = 0.20, λg = 10 μm at x = 0.20).
~1joulecm -2 degree) for a very short time (100ns ~ 1m)
s), the temperature of the irradiated area is raised for a short time by selectively irradiating the HgCdTe crystal surface through a light shielding mask patterned in the same shape as the diode matrix to be fabricated. After this process, the region that has returned to ambient temperature becomes Hg deficient as a result of Hg having a high vapor pressure, and the conductivity type is converted to P type. As a result, a Pn junction is formed between the irradiation region and the deep side of the substrate, and by irradiating in a matrix, a diode matrix is formed. As the light irradiation is controlled both in output power and irradiation time, the effective area that converts to P type does not spread laterally from the irradiation area, and it also extends from 5 to 50 cm in depth.
It is about 10 μm. As a result, it is extremely advantageous in forming a high-resolution image sensor.
以下、本発明の実施例を詳述する。 Examples of the present invention will be described in detail below.
室温では、Hg、Cd、Teの蒸気圧は各々１×
10-3、１×10-7、１×10-9Torr程度であり、
HgCdTe表面からの各構成元素の解離は無視でき
る。一方、例えば500℃では、Hg、Cd、Teの蒸
気圧は各々１×104、10、1Torr程度となり、
Cd、Te蒸気圧に比べて、Hg蒸気圧が極めて高い
値であるために、Hg蒸気圧を制御しない状態で
結晶をこの温度に保つと、HgCdTe結晶表面から
構成元素の内特にHgが解離し、結晶表面層には
Hg空孔が発生する。このHg空孔はアクセプタと
して作用することが判つている。 At room temperature, the vapor pressures of Hg, Cd, and Te are each 1×
10 -3 , 1×10 -7 , 1×10 -9 Torr,
Dissociation of each constituent element from the HgCdTe surface can be ignored. On the other hand, at 500℃, for example, the vapor pressures of Hg, Cd, and Te are approximately 1×10 4 , 10, and 1 Torr, respectively.
Since the Hg vapor pressure is extremely high compared to the Cd and Te vapor pressures, if the crystal is kept at this temperature without controlling the Hg vapor pressure, Hg among the constituent elements will dissociate from the HgCdTe crystal surface. , in the crystal surface layer
Hg vacancies are generated. It is known that this Hg vacancy acts as an acceptor.
第１図の如くHgCdTe結晶１上に遮蔽マスク２
を設け、所定の波長、出力、照射時間で高出力光
３パルスをHgCdTe結晶表面に照射すると、この
結晶の吸収係数、熱伝導率、表面からの熱放射の
関数として、高出力光、例えばレーザー光のパワ
ー密度、照射時間に応じて照射されたHgCdTe表
面層の上昇温度とその領域及び周囲温度に迄戻る
経過時間が決まる。 As shown in Figure 1, a shielding mask 2 is placed on the HgCdTe crystal 1.
When a HgCdTe crystal surface is irradiated with three pulses of high-power light at a predetermined wavelength, power, and irradiation time, the high-power light, e.g. The temperature rise of the irradiated HgCdTe surface layer and the elapsed time for the region to return to the ambient temperature are determined depending on the power density of the light and the irradiation time.
レーザー光として、例えば10.6μｍの発振波長
をもつCO2レーザー、或いは1.06μｍの発振波長
をもつYAGレーザーが適切である。照射量は0.1
〜1joulecmであればHgCdTeを500℃以上の高温
に昇温するのに充分であり、その結果HgCdTeは
1017〜1018cm-3の正孔濃度をもつＰ型導電にその
領域４のみが達成される。照射時間が100ns〜１
ｍｓである結果、照射領域は深さ方向にも表面と
平行な横方向にも、10μｍを超えて照射の影響を
受けない。 As the laser light, for example, a CO 2 laser with an oscillation wavelength of 10.6 μm or a YAG laser with an oscillation wavelength of 1.06 μm is suitable. Irradiation dose is 0.1
~1 joulecm is sufficient to heat HgCdTe to a high temperature of over 500℃, and as a result, HgCdTe
Only that region 4 achieves P-type conductivity with a hole concentration of 10 17 to 10 18 cm -3 . Irradiation time is 100ns~1
As a result, the irradiated area is not affected by the irradiation beyond 10 μm both in the depth direction and in the lateral direction parallel to the surface.
以上の結果、１セルが50μｍの２次元マトリク
スを形成することは容易である。更に高密度に形
成することも可能である。 As a result of the above, it is easy to form a two-dimensional matrix in which each cell is 50 μm. It is also possible to form it with even higher density.
第２図は前述の如くｎ型HgCdTe基板１上に水
銀の蒸発によつてＰ型HgCdTe層４を２次元マト
リクス状に形成し、次いで、基板上に絶縁膜６を
形成し、（例えば、真空蒸着法によつて形成した
ZnS膜）ホトエツチングにより、該Ｐ型HgCdTe
層４上の絶縁膜を除去した後、金属を蒸着しパタ
ーニングにより電極７を形成したテルル化水銀カ
ドミウム・ダイオードの断面図を示す。受光を表
面から行なう方式と、裏面から行なう方式とがあ
るが、前者の方式による実施例を第２図に示す。 FIG. 2 shows that a P-type HgCdTe layer 4 is formed in a two-dimensional matrix on an n-type HgCdTe substrate 1 by evaporating mercury as described above, and then an insulating film 6 is formed on the substrate (for example, in a vacuum formed by vapor deposition method
ZnS film) By photoetching, the P-type HgCdTe
A cross-sectional view of a mercury cadmium telluride diode in which an electrode 7 is formed by depositing metal and patterning after removing the insulating film on layer 4 is shown. There is a method in which light is received from the front surface and a method in which light is received from the back surface, and an embodiment using the former method is shown in FIG.
以上の説明から明らかなように、本発明によつ
て、HgCdTeのｎ型基板にＰ型領域を高密度に形
成することが可能になる。 As is clear from the above description, the present invention makes it possible to form P-type regions in a high density on an HgCdTe n-type substrate.
本発明の効果としては、他の方法を用いてＰ型
基板にｎ型領域を形成する方式に加えて、回路構
成上のフレクシビリテイーを増すことを意味する
と共に、この逆タイプを他の方法によるタイプと
相補的に組合せることによつて、受光部の回路設
計上、極めて有利である。 As an effect of the present invention, in addition to the method of forming an n-type region on a P-type substrate using other methods, it means increasing the flexibility in circuit configuration, and this inverse type can be used for other methods. Complementary combination with the method type is extremely advantageous in terms of circuit design of the light receiving section.
第１図は本発明のテルル化水銀カドミウム・ダ
イオードの製造原理を示す図、第２図は本発明の
ダイオードの断面図である。
１；HgCdTe、２；遮蔽マスク、３；高出力
光、４；照射領域、５；Hg蒸気、６；絶縁膜、
７；電極。
FIG. 1 is a diagram showing the manufacturing principle of the mercury cadmium telluride diode of the present invention, and FIG. 2 is a sectional view of the diode of the present invention. 1; HgCdTe, 2; Shielding mask, 3; High output light, 4; Irradiation area, 5; Hg vapor, 6; Insulating film,
7; Electrode.
Claims (1)
半導体結晶の吸収端波長にほぼ等してか或いはそ
れよりも短波長の高出力光を選択的に照射するこ
とによつて、この結晶の照射領域をＰ型変換し
て、Pn接合を形成する工程を含むことを特徴と
するテルル化水銀カドミウム・ダイオードの製造
方法。1. By selectively irradiating an n-type mercury cadmium telluride crystal with high-output light having a wavelength approximately equal to or shorter than the absorption edge wavelength of this semiconductor crystal, the irradiation area of this crystal is A method for manufacturing a mercury cadmium telluride diode, comprising the step of converting the mercury cadmium telluride diode into a P-type to form a Pn junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55183442A JPS57106180A (en) | 1980-12-24 | 1980-12-24 | Manufacture of mercury cadmium telluride diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55183442A JPS57106180A (en) | 1980-12-24 | 1980-12-24 | Manufacture of mercury cadmium telluride diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57106180A JPS57106180A (en) | 1982-07-01 |
| JPS6259473B2 true JPS6259473B2 (en) | 1987-12-11 |
Family
ID=16135835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55183442A Granted JPS57106180A (en) | 1980-12-24 | 1980-12-24 | Manufacture of mercury cadmium telluride diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106180A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6450998U (en) * | 1987-09-25 | 1989-03-29 | ||
| JPH0824098A (en) * | 1994-07-20 | 1996-01-30 | Hakohide Shiki Seisakusho:Kk | Constitutional member for picture frame, picture frame using the same and their manufacture |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931577B (en) * | 2019-11-11 | 2021-12-31 | 中国科学院上海技术物理研究所 | Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption |
-
1980
- 1980-12-24 JP JP55183442A patent/JPS57106180A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6450998U (en) * | 1987-09-25 | 1989-03-29 | ||
| JPH0824098A (en) * | 1994-07-20 | 1996-01-30 | Hakohide Shiki Seisakusho:Kk | Constitutional member for picture frame, picture frame using the same and their manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57106180A (en) | 1982-07-01 |
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