JPS6259899B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for manufacturing an infrared sensing element made of a multi-component semiconductor, and particularly to a method for manufacturing a plurality of sensing elements at the same time.

(b) Prior art and problems In general, conventional methods for manufacturing photoconductive infrared sensing elements made of multi-component semiconductors such as mercury-gadmium-tellurium (HgCdTe) are as follows:
HgCdTe on an insulating support plate made of sapphire.
After bonding multi-component semiconductor chips such as the above with an epoxy adhesive or the like, devices were fabricated using a predetermined manufacturing process. In addition, in order to reduce manufacturing costs, a wafer made of HgCdTe or the like is bonded onto a high resistivity silicon support plate using an epoxy adhesive, and a large number of infrared detection elements are formed on the wafer. A manufacturing method has also been proposed in which a large number of infrared sensing elements are obtained at one time by dividing the infrared rays into individual sensing elements using a scriber.

However, among the above-mentioned manufacturing methods, the former has the disadvantage that only a few devices can be manufactured at a time, resulting in high costs. On the other hand, the latter has mass production capability,
Although it has the advantage of reducing manufacturing costs, it does not cause heat exchange with the sensing element components because a high resistivity silicon substrate is used as the support plate in order to facilitate element division using a scriber in the final process after element formation. The difference in expansion coefficient becomes large, which causes distortion in the infrared sensing element formed on the support plate, resulting in a disadvantage that the performance of the sensing element is deteriorated.

(c) Object of the Invention The object of the present invention is to provide a novel manufacturing method that eliminates the above-mentioned drawbacks and can efficiently form a large number of infrared sensing elements at once.

(d) Structure of the Invention According to the present invention, mark lines are formed in advance at regular intervals, a hole is provided in the center of each area on the support base divided by the mark lines, and a hole is formed in the center of each area on the support base divided by the mark line. An appropriate amount of adhesive is dropped to adhere an insulating support plate to each of the divided areas, and a multi-component semiconductor chip, which will become an infrared detection element, is fixed to the upper surface of each of the plates to form a detection element. ,
This is achieved by providing a method for manufacturing an infrared sensing element, characterized in that each insulating support plate on which a sensing element is formed is peeled off and separated from the support base.

(e) Embodiments of the invention Examples of the invention will be described in detail below with reference to the drawings.

1 to 4 are perspective views showing an embodiment of the method for manufacturing an infrared sensing element according to the present invention in the order of steps;
3 is a cross-sectional view taken along the -' section line in FIG. 2. FIG. First, as shown in FIG. 1, on the main surface of a support base 1 made of, for example, a silicon plate, a large number of divided areas 3 of the size of five insulating support plates (described later) are formed by mark lines 2, and each of the divided areas 3 is A hollow hole 4 having a diameter of about 1 mm, for example, is provided in the center of the divided area 3. Note that the mark line 2 can be carved using a diamond tool, chemical etching, or various other methods, and the depth of the marking only needs to be very shallow.

Then, onto each of the hollow holes 4 on the support base 1 in which the mark lines 2 and the hollow holes 4 were provided as described above, an epoxy adhesive, for example, was dropped to the extent that it rose slightly above the hollow holes 4. After that, a support plate 5 made of sapphire is placed in each divided area 3 including the recessed hole 4 as shown in FIG. 2 and FIG. Tack it correctly. Further, on each support plate 5, a chip 6, which is obtained by dividing a multi-component semiconductor wafer made of, for example, HgCbTe into the size of one element, is fixed with an epoxy adhesive or the like. Next, a plurality of multi-component semiconductor chips 6 arranged on the support base 1 via a support plate 5 are simultaneously polished to a predetermined thickness, and then subjected to a device fabrication process using conventional photolithography technology. Therefore, as shown in FIG. 4, a plurality of desired infrared sensing elements 7 are formed at the same time. Thereafter, the support plate 5 to which each detection element 7 is fixed is sequentially peeled off and separated from the partially temporarily attached support base 1 using, for example, a simple peeling tool 9 with a thin blade-like tip as shown in the figure. A plurality of infrared detecting elements 8 are integrated with the support plate 5 by
can be efficiently obtained all at once.

(f) Effects of the Invention As is clear from the above explanation, according to the method of manufacturing an infrared sensing element according to the present invention, it is easy to fabricate a large number of multi-component semiconductor chips at once, and a large number of infrared sensing elements can be manufactured. can be efficiently obtained all at once, which has the advantage of greatly reducing manufacturing costs, and is extremely advantageous when applied to the manufacturing of this type of infrared sensing element.

[Brief explanation of the drawing]

FIGS. 1 to 4 are a perspective view and a sectional view taken along the line -' in FIG. In the drawing, 1 is a support base, 2 is a mark line, 3 is a divided area, 4 is a hollow hole, 5 is an insulating support plate, 6 is a multi-dimensional semiconductor chip, 7 is an infrared detection element 8 integrated with the support plate 5 The configured infrared sensing element 9 represents a stripping tool.

Claims (1)

[Claims] 1. Form mark lines in advance at regular intervals, make a hole in the center of each area on the support base divided by the mark lines, and drop an appropriate amount of adhesive into each hole to separate each divided area. After applying an insulating support plate to the substrate, and performing a process to form a detection element by fixing a multi-component semiconductor chip that will become an infrared detection element to each upper surface, a detection element was formed from above the support base. A method for manufacturing an infrared sensing element, characterized in that each insulating support plate is peeled off and separated.