JPS6260827B2 - - Google Patents
Info
- Publication number
- JPS6260827B2 JPS6260827B2 JP61197149A JP19714986A JPS6260827B2 JP S6260827 B2 JPS6260827 B2 JP S6260827B2 JP 61197149 A JP61197149 A JP 61197149A JP 19714986 A JP19714986 A JP 19714986A JP S6260827 B2 JPS6260827 B2 JP S6260827B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- semiconductor region
- bonding pad
- photosensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は半導体基板表面にダイオードを形成
し、そのダイオード部分に光が照射された場合に
ダイオードに発生するキヤリアを電気信号として
検知するホトセンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photosensor in which a diode is formed on the surface of a semiconductor substrate, and when the diode portion is irradiated with light, carriers generated in the diode are detected as an electrical signal.
ホトセンサにおいて受光部（ダイオード部）以
外の部分に入射された光によつて発生したキヤリ
アが受光部に拡散し、その結果出力レベルが変化
するという問題がある。これは一種の雑音であ
り、正確な光検知の妨げとなるので、できるだけ
小さくする必要がある。 In the photosensor, there is a problem in that carriers generated by light incident on a portion other than the light receiving section (diode section) diffuse into the light receiving section, resulting in a change in output level. This is a type of noise that interferes with accurate light detection, so it must be minimized as much as possible.
そのため、受光部周辺に設ける遮光膜（一般に
アルミニウム膜）の形成する領域をできるだけ広
くし、雑音の原因となる光の入射を防止する試み
がなされた。しかし、少なくともボンデイングパ
ツド部とアルミニウムからなる遮光膜との間に間
隙（例えば50μｍ程度の間隙）を設ける必要があ
るので、その間隙部分を通じて入射される光に基
づく雑音の発生を防止することができない。 Therefore, attempts have been made to make the area in which a light-shielding film (generally an aluminum film) provided around the light-receiving part is formed as wide as possible to prevent the incidence of light that causes noise. However, since it is necessary to provide at least a gap (for example, a gap of about 50 μm) between the bonding pad and the light-shielding film made of aluminum, it is difficult to prevent the generation of noise due to light incident through that gap. Can not.
本発明はこのような問題を解決すべくなされた
もので、受光部以外の部分に入射される光に基づ
く雑音の発生を防止することを目的とするもので
ある。 The present invention has been made to solve such problems, and its purpose is to prevent the generation of noise due to light incident on parts other than the light receiving section.
上記目的を達成するための本発明の一実施態様
は半導体基板表面に半導体領域を形成することに
よりホトダイオードを構成し、このホトダイオー
ド上に受光用開口部を具備し、該開口部を除きフ
イールド領域を被う遮光膜を上記基板に設けてな
るホトセンサにおいて、半導体基板上に設けた電
極取出用パツドと該遮光膜とが重なりあうように
層間絶縁膜を介して交互に配置されてなることを
特徴とするものである。 One embodiment of the present invention to achieve the above object constitutes a photodiode by forming a semiconductor region on the surface of a semiconductor substrate, has a light-receiving opening on the photodiode, and has a field region other than the opening. A photosensor in which a covering light-shielding film is provided on the substrate, characterized in that the electrode extraction pads provided on the semiconductor substrate and the light-shielding film are alternately arranged with an interlayer insulating film in between so as to overlap with each other. It is something to do.
以下、本発明を実施例により説明する。第１図
は半導体ペレツトの全体を示す平面図である。本
発明によるホトセンサは第１図に示すように受光
用開口部３及びボンデイングパツド部４の一部を
除き、ほぼ全面的にフイールド領域をアルミニウ
ムからなる遮光膜が被つている。 The present invention will be explained below using examples. FIG. 1 is a plan view showing the entire semiconductor pellet. As shown in FIG. 1, in the photo sensor according to the present invention, the field region is almost completely covered with a light-shielding film made of aluminum, except for a portion of the light-receiving opening 3 and the bonding pad portion 4.
第２図はボンデイングパツド部を拡大した部分
拡大平面図であり、第３図はボンデイングパツド
部におけるＡ―Ａ視断面図である。 FIG. 2 is a partially enlarged plan view of the bonding pad portion, and FIG. 3 is a sectional view taken along line AA of the bonding pad portion.
第３図に示すようにボンデイングパツド用のア
ルミニウム膜８と遮光用のアルミニウム膜１０と
が重なりあうように層間絶縁膜１１を介して交互
に配置することによつて寄生キヤリアを発生させ
る光がボンデイングパツドの周辺で遮光されるよ
うにしたものである。９は遮光用のアルミニウム
膜と同時に形成した第２のボンデイングパツドで
あるが、特になくてもよい。 As shown in FIG. 3, aluminum films 8 for bonding pads and aluminum films 10 for light shielding are arranged alternately with interlayer insulating films 11 interposed so as to overlap, thereby preventing light that generates parasitic carriers. The area around the bonding pad is designed to block light. A second bonding pad 9 is formed at the same time as the light-shielding aluminum film, but it is not necessary.
また、ボンデイングパツド用のアルミニウム膜
８と遮光用のアルミニウム膜１０との間で斜から
半導体基板に光が入射した場合でもそれに基づい
て基板中に発生するキヤリアを吸収するためボン
デイングパツド部とその周辺の少くとも一部の下
方にキヤリア吸収用n+型半導体領域５を形成し
ておけば問題はない。このキヤリア吸収用n+型
半導体領域５は＋ＶDD端子に電気的に接続され、
寄生キヤリアを吸収できるようにしてある。な
お、ボンデイングパツド用のアルミニウム膜８と
遮光用のアルミニウム膜１０との重なりを大きく
とれば上記キヤリア吸収用n+型半導体領域５を
特に設けなくてもよい。 Furthermore, even if light is obliquely incident on the semiconductor substrate between the bonding pad aluminum film 8 and the light shielding aluminum film 10, the bonding pad portion absorbs the carrier generated in the substrate based on the light incident on the semiconductor substrate from an angle. There is no problem if the carrier absorption n + -type semiconductor region 5 is formed below at least a part of the periphery. This carrier absorption n + type semiconductor region 5 is electrically connected to the +V DD terminal,
It is designed to absorb parasitic carriers. Incidentally, if the aluminum film 8 for bonding pad and the aluminum film 10 for light shielding have a large overlap, it is not necessary to provide the n + -type semiconductor region 5 for carrier absorption.
以上のように本発明によれば、受光部以外の部
分に雑音の原因となる光が照射されるのを防止す
る構成をとつているため、ホトセンサによる正確
な光検知が可能となる。 As described above, according to the present invention, since the structure is adopted to prevent light that causes noise from being irradiated to parts other than the light receiving section, accurate light detection by the photosensor is possible.
第１図乃至第３図は本発明の一実施例を示すも
ので第１図が半導体ペレツトの全体を示す平面
図、第２図が部分拡大平面図、第３図が第２図の
Ａ―Ａ視断面図である。
１…ｐ型半導体基板、２…遮光膜、３…受光
部、４…ボンデイングパツド部、５…寄生キヤリ
ア吸収用n+型半導体領域、６…半導体基板、７
…フイールド部絶縁膜、８…主要なボンデイング
パツド用のアルミニウム膜、９…第２のボンデイ
ングパツド用のアルミニウム膜、１０…遮光用の
アルミニウム膜、１１…アルミニウム層間の絶縁
膜、１２…保護絶縁膜。
1 to 3 show one embodiment of the present invention, in which FIG. 1 is a plan view showing the entire semiconductor pellet, FIG. 2 is a partially enlarged plan view, and FIG. 3 is A--A of FIG. It is a sectional view taken from A. DESCRIPTION OF SYMBOLS 1...p-type semiconductor substrate, 2...light-shielding film, 3...light-receiving part, 4...bonding pad part, 5...n + -type semiconductor region for parasitic carrier absorption, 6...semiconductor substrate, 7
...Field part insulating film, 8...Aluminum film for main bonding pad, 9...Aluminum film for second bonding pad, 10...Aluminum film for light shielding, 11...Insulating film between aluminum layers, 12...Protection Insulating film.
Claims (1)
イオードを形成し、このホトダイオード上に受光
用開口部を具備し、該開口部を除きフイールド領
域を被う遮光膜を上記基板上に設けてなるホトセ
ンサにおいて、半導体基板上に設けた電極取出用
パツドと該遮光膜とが重なりあうように層間絶縁
膜を介して交互に配置されてなることを特徴とす
るホトセンサ。 ２ 該電極取出用パツドとその周辺の少くとも一
部の下方に該半導体領域と同導電型であつて、基
板側が接続される電源端子と逆の極性の電源端子
に接続される寄生キヤリア吸収用半導体領域を形
成してなることを特徴とする特許請求の範囲第１
項記載のホトセンサ。[Claims] 1. A photodiode consisting of a semiconductor region is formed on the surface of a semiconductor substrate, a light receiving opening is provided on the photodiode, and a light shielding film is provided on the substrate to cover the field region except for the opening. 1. A photosensor comprising: electrode extraction pads provided on a semiconductor substrate and the light-shielding film arranged alternately with an interlayer insulating film interposed therebetween so as to overlap with each other. 2. A parasitic carrier absorbing pad connected to a power terminal of the same conductivity type as the semiconductor region and opposite in polarity to the power terminal to which the substrate side is connected, below the electrode extraction pad and at least a part of its surroundings. Claim 1 characterized in that it is formed by forming a semiconductor region.
Photosensor described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197149A JPS6276570A (en) | 1986-08-25 | 1986-08-25 | Photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197149A JPS6276570A (en) | 1986-08-25 | 1986-08-25 | Photosensor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12063879A Division JPS5645086A (en) | 1979-09-21 | 1979-09-21 | Photosensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276570A JPS6276570A (en) | 1987-04-08 |
| JPS6260827B2 true JPS6260827B2 (en) | 1987-12-18 |
Family
ID=16369576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61197149A Granted JPS6276570A (en) | 1986-08-25 | 1986-08-25 | Photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276570A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163868A (en) * | 1992-09-28 | 1994-06-10 | Sanyo Electric Co Ltd | Semiconductor device with built-in photodiode |
| DE102007051752B4 (en) | 2007-10-30 | 2010-01-28 | X-Fab Semiconductor Foundries Ag | Light-blocking layer sequence and method for their preparation |
-
1986
- 1986-08-25 JP JP61197149A patent/JPS6276570A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6276570A (en) | 1987-04-08 |
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