JPS6261668B2 - - Google Patents
Info
- Publication number
- JPS6261668B2 JPS6261668B2 JP24824583A JP24824583A JPS6261668B2 JP S6261668 B2 JPS6261668 B2 JP S6261668B2 JP 24824583 A JP24824583 A JP 24824583A JP 24824583 A JP24824583 A JP 24824583A JP S6261668 B2 JPS6261668 B2 JP S6261668B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- film
- opening
- tungsten
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
技術分野
本発明はシリコン基板上に形成された絶縁膜上
及び絶縁膜の窓部にタングステンシリサイド膜を
形成する方法に関する。TECHNICAL FIELD The present invention relates to a method for forming a tungsten silicide film on an insulating film formed on a silicon substrate and in a window portion of the insulating film.
従来技術
第１図のごとく、シリコン基板１上に形成され
た絶縁膜２上及び絶縁膜の窓部４にタングステン
シリサイド膜３を形成する際、絶縁膜２とシリコ
ン基板１との段差構造によりタングステンシリサ
イド膜３の表面には段差ｈが生ずる。この段差は
タングステンシリサイド膜を配線として用いるた
めにできるだけ小さくし、平坦化するのが望まし
い。段差のある配線は段差切れを生じる等障害と
なる。Prior Art As shown in FIG. 1, when forming a tungsten silicide film 3 on an insulating film 2 formed on a silicon substrate 1 and in a window 4 of the insulating film, the step structure between the insulating film 2 and the silicon substrate 1 causes tungsten silicide film 3 to be A step h is generated on the surface of the silicide film 3. In order to use the tungsten silicide film as a wiring, it is desirable to make this step as small as possible and flatten it. Wiring with steps may cause problems such as breakage at the steps.
発明の目的
本発明はタングステン膜とタングステンシリサ
イド膜を連続的に成長し、一度の工程で穴埋めお
よび配線ができるようにし、平坦化を図ることを
目的とする。OBJECTS OF THE INVENTION An object of the present invention is to continuously grow a tungsten film and a tungsten silicide film so that hole filling and wiring can be performed in a single process, thereby achieving planarization.
発明の構成及び作用
以下、実施例とともに本発明を詳しく説明す
る。Structure and operation of the invention The present invention will be described in detail below along with examples.
第２図Ａにおいて、シリコン基板１の表面に絶
縁膜（例えばPSG等）２を形成し、コンタクトを
とる箇所に開口４を形成し、減圧CVD法により
タングステン（Ｗ）層６を形成し、次に図Ｂのよ
うにタングステンシリサイド層７を連続して形成
する。減圧CVDは第３図の拡散炉方式のリアク
タ９に原料ガス８を供給してシリコン基板１に熱
分解反応によりＷ又はＷ−Siを堆積する方法が量
産に向いている。また第４図のように平行平板方
式のリアクタを用いることもできる。基台１１上
にシリコン基板１を置き原料ガス８を供給して熱
分解でシリコン基板１上に膜を形成する。本発明
においてはＷの選択成長とＷ−Siの成長を原料ガ
スの切換えとリアクタの温度を制御することによ
り連続して行なう。以下にこの連続処理を詳記す
ると、
(i) 開口４内のシリコン基板１の表面へのＷの選
択成長
原料ガスとしてWF6と窒素ガスN2を供給
し、リアクタの温度を300〜350℃として減圧下
でＷを成長する。N2の他にH2を加えることも
できるが、H2が加わるとＷ成長の選択性が低
下する。Ｗの成長時にWF6と下地のシリコン
が反応するためにある程度シリコン表面が喰わ
れる。 In FIG. 2A, an insulating film (for example, PSG, etc.) 2 is formed on the surface of a silicon substrate 1, an opening 4 is formed at a contact point, a tungsten (W) layer 6 is formed by low pressure CVD, and then Then, as shown in FIG. B, a tungsten silicide layer 7 is continuously formed. Low-pressure CVD is suitable for mass production by supplying raw material gas 8 to a diffusion furnace type reactor 9 shown in FIG. 3 and depositing W or W-Si on silicon substrate 1 by thermal decomposition reaction. Further, a parallel plate type reactor as shown in FIG. 4 can also be used. A silicon substrate 1 is placed on a base 11, a raw material gas 8 is supplied, and a film is formed on the silicon substrate 1 by thermal decomposition. In the present invention, the selective growth of W and the growth of W--Si are performed continuously by switching the source gas and controlling the temperature of the reactor. This continuous process is detailed below: (i) Selective growth of W on the surface of the silicon substrate 1 within the opening 4 WF 6 and nitrogen gas N 2 are supplied as source gases, and the temperature of the reactor is set to 300 to 350°C. W is grown under reduced pressure. Although H 2 can be added in addition to N 2 , the selectivity of W growth decreases when H 2 is added. During the growth of W, the silicon surface is eaten away to some extent because WF 6 reacts with the underlying silicon.
反応はWF6＋Si→Ｗ＋SiF4が生じ、Ｗがシリ
コン表面に析出する。形成されるＷ層は数百乃
至数千Å程度に形成できる。リアクタの温度を
350℃以上に上げると前記のシリコン表面の喰
込み５が多くなり、素子に対するコンタクトと
して不適当であり、また300℃以下では密着性
の点で問題が生じる。300℃〜350℃において下
地のシリコンの喰込み少なく密着性の良いＷ膜
が選択的に形成され、開口４が埋められる。 In the reaction, WF 6 +Si→W+SiF 4 occurs, and W is deposited on the silicon surface. The formed W layer can be formed to have a thickness of several hundred to several thousand angstroms. reactor temperature
If the temperature is raised to 350°C or higher, the silicon surface will have a large amount of bite 5, making it unsuitable as a contact to an element, and if the temperature is lower than 300°C, problems will arise in terms of adhesion. At 300° C. to 350° C., a W film with good adhesion and little biting into the underlying silicon is selectively formed, and the opening 4 is filled.
(ii) Ｗ−Siの成長
原料ガスをWF6とSiH4に切換え、350℃〜
450℃で減圧下でＷ−Siを絶縁膜２及び開口内
のＷ上に一様に成長する。原料ガスにH2を混
入することもでき、H2の混入でＷが多いＷ−
Siが形成される。温度を350℃〜450℃とするの
はこの範囲で絶縁膜２と密着性が良いＷ−Siが
形成されるからである。(ii) Growth of W-Si Switch the source gas to WF 6 and SiH 4 and grow at 350℃~
W-Si is uniformly grown on the insulating film 2 and the W inside the opening at 450° C. under reduced pressure. It is also possible to mix H2 into the raw material gas, and by mixing H2 , W-
Si is formed. The reason why the temperature is set to 350° C. to 450° C. is that W-Si having good adhesion to the insulating film 2 is formed within this range.
次に、減圧CVDにおけるリアクタ内の圧力に
ついて説明すると、本発明においては1torr以下
の減圧下で成長が行なわれ、0.1〜1torrが実用さ
れる範囲であり、特に0.1〜0.4torrでは成長層の
白濁が生ぜず（反応が厳しいと生ずる大きな粒子
又は気相で成長したものが付着する）、形成され
た膜中に水素やフツ素が含まれず密着性の良い膜
が得られる（ＨやＦが含まれると膜がはがれ易
い）。 Next, to explain the pressure inside the reactor in reduced pressure CVD, in the present invention, growth is performed under reduced pressure of 1 torr or less, and 0.1 to 1 torr is the practical range. (Large particles that are generated when the reaction is severe or those grown in the gas phase adhere), and the formed film does not contain hydrogen or fluorine, resulting in a film with good adhesion. (The film may peel off easily if exposed to water.)
次に原料ガス供給についてリアクタが平行平板
の場合で具体的数値を例示すると(i)のＷの選択成
長ではWF6が１〜10c.c.／min、N2が200c.c.／min
位、H2が100c.c.／min位で行い、(ii)のＷ−Siの成
長ではWF6が１〜10c.c.／min、SiH4が10〜200
c.c.／minで行なう。 Next, to give an example of specific values for raw material gas supply when the reactor is a parallel plate, in (i) selective growth of W, WF 6 is 1 to 10 c.c./min, and N 2 is 200 c.c./min.
In the growth of W-Si (ii), WF 6 was 1 to 10 c.c./min, and SiH 4 was 10 to 200 c.c./min.
Perform at cc/min.
発明の効果
以上、本発明によれば１つのCVD装置で連続
的に良好なコンタクトが形成できるとともに平坦
化されたＷ−Si配線ができるもので、例えば１μ
ｍの絶縁層の場合、従来１μｍ近い段差が出来た
のに対し、本発明によれば段差は０〜3000Å位と
大幅に低減できる。Effects of the Invention As described above, according to the present invention, it is possible to continuously form good contacts with a single CVD device, and also to form flattened W-Si wiring.
In the case of an insulating layer of m, conventionally a step of nearly 1 μm was created, but according to the present invention, the step can be significantly reduced to about 0 to 3000 Å.
第１図は従来のＷ−Si膜形成を示す説明図、第
２図Ａ，Ｂは本発明の成長方法を説明する工程
図、第３図は本発明に用いる減圧CVD装置の説
明図、第４図は本発明に用いる他の減圧CVD装
置の説明図。
第２図〜第４図において主な符号、１……シリ
コン基板、２……絶縁膜、４……開口（窓部）、
５……喰込み、６……タングステン層、７……タ
ングステンシリサイド層、８……原料ガス、９…
…拡散炉方式のリアクタ。
FIG. 1 is an explanatory diagram showing conventional W-Si film formation, FIGS. 2A and B are process diagrams explaining the growth method of the present invention, and FIG. 3 is an explanatory diagram of the low-pressure CVD apparatus used in the present invention. FIG. 4 is an explanatory diagram of another reduced pressure CVD apparatus used in the present invention. In FIGS. 2 to 4, the main symbols are: 1...Silicon substrate, 2...Insulating film, 4...Opening (window),
5... Biting, 6... Tungsten layer, 7... Tungsten silicide layer, 8... Raw material gas, 9...
...Diffusion furnace type reactor.
Claims (1)
た絶縁膜の表面及び該開口内のシリコン基板表面
にタングステンシリサイド膜を形成するにあた
り、WF6を原料ガスとして用い300〜350℃でタ
ングステンを前記開口のシリコン基板表面に減圧
状態で化学気相成長せしめ、次いでWF6とSiH4
を原料ガスとして用い350〜450℃でタングステン
シリサイドを前記絶縁膜と開口のタングステン上
に連続的に減圧状態で化学気相成長することを特
徴とするタングステンシリサイド膜の成長方法。1. To form a tungsten silicide film on the surface of an insulating film that covers a silicon substrate and has an opening partially formed therein, and on the surface of the silicon substrate inside the opening, tungsten is heated at 300 to 350°C using WF 6 as a raw material gas. Chemical vapor deposition is performed on the silicon substrate surface of the opening under reduced pressure, and then WF 6 and SiH 4 are deposited.
A method for growing a tungsten silicide film, characterized in that tungsten silicide is continuously grown in a chemical vapor phase under reduced pressure on the insulating film and the tungsten in the opening at 350 to 450°C using as a raw material gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24824583A JPS60145376A (en) | 1983-12-30 | 1983-12-30 | Growing method of tungsten silicide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24824583A JPS60145376A (en) | 1983-12-30 | 1983-12-30 | Growing method of tungsten silicide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60145376A JPS60145376A (en) | 1985-07-31 |
| JPS6261668B2 true JPS6261668B2 (en) | 1987-12-22 |
Family
ID=17175307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24824583A Granted JPS60145376A (en) | 1983-12-30 | 1983-12-30 | Growing method of tungsten silicide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60145376A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2526039B2 (en) * | 1986-07-18 | 1996-08-21 | 日本真空技術株式会社 | CVD method |
| JPS6311669A (en) * | 1986-06-30 | 1988-01-19 | Ulvac Corp | Cvd method |
| JPS6326368A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JP2526040B2 (en) * | 1986-07-18 | 1996-08-21 | 日本真空技術株式会社 | CVD method |
| JPS6311668A (en) * | 1986-06-30 | 1988-01-19 | Ulvac Corp | Cvd method |
| JPS6326369A (en) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Cvd method |
| JP2592844B2 (en) * | 1987-07-10 | 1997-03-19 | 株式会社東芝 | Method of forming high melting point metal film |
| US5028565A (en) * | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
| JPH03223462A (en) * | 1990-01-27 | 1991-10-02 | Fujitsu Ltd | Formation of tungsten film |
| ATE143703T1 (en) * | 1990-06-26 | 1996-10-15 | Air Liquide | METHOD FOR PRODUCING SELF-SUPPORTING MOLDED BODY FROM FIREPROOF METAL |
-
1983
- 1983-12-30 JP JP24824583A patent/JPS60145376A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60145376A (en) | 1985-07-31 |
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