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JPS626425B2 - - Google Patents
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JPS626425B2 - - Google Patents

Info

Publication number
JPS626425B2
JPS626425B2 JP54030482A JP3048279A JPS626425B2 JP S626425 B2 JPS626425 B2 JP S626425B2 JP 54030482 A JP54030482 A JP 54030482A JP 3048279 A JP3048279 A JP 3048279A JP S626425 B2 JPS626425 B2 JP S626425B2
Authority
JP
Japan
Prior art keywords
point
transformer
switching element
voltage
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54030482A
Other languages
Japanese (ja)
Other versions
JPS55122480A (en
Inventor
Toshihiro Onodera
Yoichi Masuda
Hiroshi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3048279A priority Critical patent/JPS55122480A/en
Priority to US06/129,405 priority patent/US4318164A/en
Priority to GB8008216A priority patent/GB2050081B/en
Priority to FR8005824A priority patent/FR2451671B1/en
Priority to CA347,679A priority patent/CA1127247A/en
Priority to DE3009963A priority patent/DE3009963C2/en
Publication of JPS55122480A publication Critical patent/JPS55122480A/en
Publication of JPS626425B2 publication Critical patent/JPS626425B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/22Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/22Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0067Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/007Plural converter units in cascade

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 この発明はスイツチング周波数の高いスイツチ
ング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a switching device with a high switching frequency.

近年、半導体素子特にIC用の小電圧、大電流
の仕様を持つ直流電源として、小形、軽量、高効
率という点からスイツチング式電源が多く用いら
れている。
In recent years, switching power supplies have been widely used as DC power supplies with low voltage and high current specifications for semiconductor devices, especially ICs, due to their small size, light weight, and high efficiency.

スイツチング式電源の種類は多く、主なものと
しては単なるチヨツパ形の電力変換器(ジヨンズ
回路、モルガン回路等)やテレビジヨン受像機の
高圧発生回路あるいはインバータ回路(ロイヤー
回路、マクレーベツドホード回路等)がある。し
かしながら、これらの装置はいずれも入力直流電
源の電圧を直接スイツチングするために、スイツ
チング周波数が10kHz前後の低い所では使える
が、100kHz前後になると電力伝達用変成器の洩
れインダクタンスやスイツチング素子(トランジ
スタやサイリスタ)の浮遊容量の影響により出力
に過渡応答が大きく重畳して、仕様を満たす設計
が困難となる。特にスイツチング素子の導通、し
や断時の損失が生じ、これが電力伝達効率低下の
原因となつている。さらに上記過渡応答は極端に
高い周波数成分を持つために、ノイズとして電源
から出て他の機器に悪影響を及ぼす。
There are many types of switching power supplies, and the main ones are simple power converters (Johns circuit, Morgan circuit, etc.), high voltage generation circuits for television receivers, or inverter circuits (Royer circuit, McRabbettsford circuit, etc.). There is. However, since all of these devices directly switch the voltage of the input DC power supply, they can be used at low switching frequencies of around 10 kHz, but at around 100 kHz, leakage inductance of power transfer transformers and switching elements (transistors, etc.) Due to the stray capacitance of the thyristor, a large transient response is superimposed on the output, making it difficult to design a product that meets specifications. In particular, losses occur when the switching element is turned on or off, which causes a decrease in power transmission efficiency. Furthermore, since the above-mentioned transient response has an extremely high frequency component, it is emitted from the power supply as noise and has an adverse effect on other equipment.

この発明は上記した点に鑑みてなされたもの
で、スイツチング素子が導通になるときはそのス
イツチング素子両端に電圧がなく、またスイツチ
ング素子が断になるときはそのスイツチング素子
に電流が流れていないように、変成器や共振用コ
ンデンサなどのパツシブ素子の値とスイツチング
素子の導通時間およびスイツチング周期などを選
定することにより、不要な過渡応答の発生を防止
するとともに電力伝達効率を向上させた高周波ス
イツチング装置を提供するものである。
This invention was made in view of the above points, and when a switching element becomes conductive, there is no voltage across the switching element, and when a switching element is disconnected, there is no current flowing through the switching element. In addition, by selecting the values of passive elements such as transformers and resonant capacitors, and the conduction time and switching period of switching elements, we have developed a high-frequency switching device that prevents unnecessary transient responses and improves power transfer efficiency. It provides:

以下この発明を実施例により詳細に説明する。 The present invention will be explained in detail below with reference to Examples.

第1図はこの発明の一実施例を示す回路構成図
である。1は入力直流電源であり、この両端に電
力伝達用変成器2の一次側インダクタンスLを介
してスイツチング素子3が接続されている。この
スイツチング素子3としては例えばトランジスタ
が用いられ、その制御端子3a(トランジスタの
場合ベースが相当する)に抵抗4を介してパルス
発生器5からスイツチングパルスが加えられる。
スイツチング素子3の両端には共振用コンデンサ
6およびダンパーダイオード7が並列に接続され
ている。ここで共振用コンデンサ6はスイツチン
グ素子3の浮遊容量より十分大きい容量を持つも
のである。変成器2は等価的に一次側インダクタ
ンスLと、二次側インダクタンスおよび変成器自
身の洩れインダクタンスの和を一次側へ換算した
値(以下付加インダクタンスという)Leと、変
成比1:−nの理想変成器TRとで現わされ、そ
の二次側に発生する電圧が整流ダイオード8およ
び平滑コンデンサ9で直流化されて出力端子10
に負荷11への直流出力として取出される。
FIG. 1 is a circuit diagram showing an embodiment of the present invention. Reference numeral 1 denotes an input DC power source, and a switching element 3 is connected to both ends of the input DC power source via a primary inductance L of a power transfer transformer 2. For example, a transistor is used as the switching element 3, and a switching pulse is applied from a pulse generator 5 to its control terminal 3a (corresponding to the base in the case of a transistor) via a resistor 4.
A resonance capacitor 6 and a damper diode 7 are connected in parallel to both ends of the switching element 3. Here, the resonance capacitor 6 has a capacitance sufficiently larger than the stray capacitance of the switching element 3. The transformer 2 equivalently has a primary inductance L, a value L e obtained by converting the sum of the secondary inductance and the leakage inductance of the transformer itself to the primary side (hereinafter referred to as additional inductance), and a transformation ratio of 1:-n. The voltage generated on the secondary side of the ideal transformer TR is converted into DC by the rectifier diode 8 and the smoothing capacitor 9, and is output to the output terminal 10.
is taken out as a DC output to the load 11.

次に第2図の波形図を参照して動作を説明す
る。今、パルス発生器5から第2図aに示すよう
なスイツチングパルスがスイツチング素子3の制
御端子3aに加えられると、スイツチング素子3
は導通状態となるが、インダクタンスLが直列に
入つているため、第2図bに示すようにt=tS
〜Tpの間直線的に上昇する電流iCが流れる。次
のt=tp〜tpoの間にスイツチング素子3は強
制的にしや断状態とされるため、電流iCは急激
に零となる。このとき第2図cに示すようにt=
S〜tpoの間変成器2の一次側インダクタンス
Lを流れていた電流iLは、iCが零になつても慣
性があるために共振用コンデンサ6に流れ込む。
この結果iLは第2図cに実線で示すようにt=
po〜teの間コサインカーブで変化する。一
方、共振用コンデンサ6の両端(スイツチング素
子3の両端)には、インダクタンスLの電流iL
が慣性により流れ始めると同時に電圧uCが生じ
始め、この電圧uCは第2図dに実線で示すよう
にサインカーブで変化する。この電圧uCはt=
eで零になつた後さらに負方向に振返そうとす
るが、ダンパーダイオード7があるために零のま
ま固定される。すなわち、t=teにおいてイン
ダクタンスLに流れている電流iLは、未だ有限
の値を持つているが向きが負であるため、以後は
第2図eに示すようにダンパーダイオード7にダ
ンパー電流iDとして流れ込み、従つて電流uC
ダンパー電流iDが流れているt=te〜tpの間
零に保たれる。そして次のスイツチングパルスに
よりスイツチング素子3が再び導通状態になると
始めの状態に戻り、以下同様な動作が繰返され
て、出力端子10から負荷11へ電力が伝達され
る。この間整流ダイオード8に流れる電流iS
は、第2図fに示すように電圧uCが入力直流電
源1の電圧(入力電圧)Eiと、出力端子10に
現れる出力電圧E0の変成器2の一次側への換算
値Ep′(=nE0)との和Ei+Ep′を越えた時点t
=tfから流れ始め、uCが再びEi+Ep′より下が
つた後インダクタンスLの慣性でt=tpまで流
れ続けてから終了する。
Next, the operation will be explained with reference to the waveform diagram in FIG. Now, when a switching pulse as shown in FIG. 2a is applied from the pulse generator 5 to the control terminal 3a of the switching element 3, the switching element 3
becomes conductive, but since the inductance L is connected in series, t=t S
A current i C flows which increases linearly between ~T p . During the next period from t= tp to tpo , the switching element 3 is forcibly turned off, so the current i C suddenly drops to zero. At this time, as shown in Figure 2c, t=
The current i L flowing through the primary inductance L of the transformer 2 between t S and t po flows into the resonant capacitor 6 due to inertia even when i C becomes zero.
As a result, i L is t=
It changes with a cosine curve between tpo and te . On the other hand, a current i L of inductance L is applied across both ends of the resonance capacitor 6 (both ends of the switching element 3).
At the same time as begins to flow due to inertia, a voltage u C begins to occur, and this voltage u C changes in a sine curve as shown by the solid line in Figure 2d. This voltage u C is t=
After reaching zero at te , it tries to turn back further in the negative direction, but because of the presence of the damper diode 7, it remains fixed at zero. That is, the current i L flowing through the inductance L at t=t e still has a finite value, but its direction is negative, so from now on, as shown in Figure 2e, the damper current flows through the damper diode 7. i D , and therefore the current u C is kept at zero between t=t e and t p when the damper current i D is flowing. When the switching element 3 becomes conductive again by the next switching pulse, it returns to the initial state, and the same operation is repeated, and power is transmitted from the output terminal 10 to the load 11. During this time, the current i S flowing through the rectifier diode 8
As shown in FIG. 2 f, the voltage u C is the voltage of the input DC power supply 1 (input voltage) E i and the converted value E p of the output voltage E 0 appearing at the output terminal 10 to the primary side of the transformer 2. ′ (=nE 0 ), the time t when the sum E i +E p ′ is exceeded
The flow starts from =t f , and after u c falls below E i +E p ' again, the flow continues until t = t p due to the inertia of the inductance L, and then ends.

ここで、第2図に実線で示した波形はスイツチ
ング素子3の導通時間Tpoとスイツチング周期T
およびインダクタンスL,Le、共振用コンデン
サ6の容量CさらにEi,Ep′等を適切に選んだ
場合である。これらの選定を誤るとスイツチング
素子3の両端の電圧uCは第2図dに破線で示す
ような応答になつて、スイツチング素子3が次に
導通する時点t=tpにおいてもuCに電圧がuR
だけ残り、この残留電圧uRがスイツチング素子
3の導通によつて急激に短絡されるため、鋭い負
のスパイクSBが発生する。
Here, the waveform shown by the solid line in FIG. 2 corresponds to the conduction time T po of the switching element 3 and the switching period T
This is a case where the inductances L, L e , the capacitance C of the resonance capacitor 6, E i , E p ', etc. are appropriately selected. If these selections are incorrect , the voltage u C across the switching element 3 will respond as shown by the broken line in FIG . is u R
, and this residual voltage u R is rapidly short-circuited by the conduction of the switching element 3, resulting in a sharp negative spike SB.

これに対し、この発明によれば上記したTpo
T,L,Le,C,Ei,Ep′等を適切に選ぶこと
によつて、第2図b,dに実線で示したようにス
イツチング素子3が断になる時点t=tpoにおい
てiCとuCとが重ならないようにすることがで
き、かつte−tS<Tなるteの存在によりスイ
ツチング素子3が導通する時点t=teにおいて
もiCとuCとが重ならないようにすることができ
るため、上述したスパイクパルスなどの不要な過
渡応答の発生をなくすことが可能となる。
On the other hand, according to the present invention, the above-mentioned T po ,
By appropriately selecting T, L, L e , C, E i , E p ', etc., the time t=t po when the switching element 3 is disconnected as shown by solid lines in FIG. 2 b and d can be determined. It is possible to prevent i C and u C from overlapping each other, and due to the existence of t e such that t e −t S <T, even at the time point t=t e when the switching element 3 becomes conductive, i C and u C do not overlap. Since they can be prevented from overlapping, it is possible to eliminate the occurrence of unnecessary transient responses such as the spike pulses described above.

以下この発明によるTpo,T,L,Le,C,
i,Ep′等の選定条件について説明する。第3
図はスイツチング素子3が断になるときおよび導
通状態になるときにiCとuCとが重ならないため
のLe/LとEp′/Eiとの関係を示したもので、
これらをハツチングで示した範囲内に選ぶことに
よつてその条件を満足する。すなわち、Le/L
を縦軸に、またEp′/Eiを横軸にとつたときの
(Ep′/Ei,Le/L)=(0.4、0.8)の点P、
(0.7、0.8)の点Q、(1.0、0.7)の点A、(1.3、
0.44)の点R、(1.54、0.1)の点S、(10.0、
0.1)の点T、(10.0、10.0)の点U、(0.4、
10.0)の点Oを結んだ閉じ折れ線で囲まれた範囲
内に入るように、Le/LとEp′/Eiとの関係を
選定するのである。
Hereinafter, T po , T, L, L e , C, according to this invention,
The selection conditions for E i , E p ′, etc. will be explained. Third
The figure shows the relationship between L e /L and E p '/E i so that i C and u C do not overlap when the switching element 3 is disconnected and conductive.
By selecting these within the range shown by hatching, the conditions are satisfied. That is, L e /L
When E p '/E i is plotted on the vertical axis and E p '/E i is plotted on the horizontal axis, the point P at (E p '/E i , L e /L) = (0.4, 0.8),
Point Q at (0.7, 0.8), Point A at (1.0, 0.7), (1.3,
Point R at (0.44), point S at (1.54, 0.1), (10.0,
Point T at (0.1), point U at (10.0, 10.0), (0.4,
10.0) The relationship between L e /L and E p '/E i is selected so that it falls within the range surrounded by the closed polygonal line connecting point O in 10.0).

一方、LとCについては次のように選定する。
第1図の構成において変成器2の一次側インダク
タンスL、付加インダクタンスLeにそれぞれ流
れる電流iL,iLeと、共振用コンデンサ6の両
端電圧uCを状態変数にとると、次の状態方程式
が得られる。
On the other hand, L and C are selected as follows.
In the configuration shown in Fig. 1, if the currents i L and i Le flowing through the primary inductance L and additional inductance L e of the transformer 2, and the voltage u C across the resonance capacitor 6 are taken as state variables, the following state equation is obtained. is obtained.

X〓AX+B ……(1) 但し この状態方程式をルンゲークツターギル法で波
形解析し、Le/Lをパラメータにし、LとCと
の比の平方根すなわち特性インピーダンスZp
√を変数して、出力電力Pputの変化を調
べたのが第4図である。その場合Ep′/Ei=1.15
とし、またLe/Lが0.5、0.6、0.7、0.9の4つの
場合についてZpを20〜70Ωまで変化させた。こ
こでLe/Lが第3図のハツチングの範囲から外
れたLe/L=0.5のときの破線で示した曲線は、
第2図においてt=tpの時点でuCが残る、いわ
ゆるモードが乗らない状態である。またLe/L
=0.6のときの曲線中、実線で示した20≦Zp≦40
の範囲はモードが乗る状態であり、破線で示した
40<Zpの範囲はモードが乗らない状態である。
さらにLe/L<0.7のときの曲線はすべてモード
が乗る状態であり、出力電力Pputも180W〜50W
程度の範囲まてスムースに変化している。以上の
結果から、上記の例ではZpの値は20〜80Ωの範
囲内に選定すればよいことが分つた。
X〓AX+B……(1) However Waveform analysis of this state equation is performed using the Rungekuttergil method, L e /L is used as a parameter, and the square root of the ratio of L and C, that is, the characteristic impedance Z p =
FIG. 4 shows an investigation of changes in the output power P put using √ as a variable. In that case E p ′/E i =1.15
Furthermore, Z p was varied from 20 to 70 Ω in four cases where L e /L was 0.5, 0.6, 0.7, and 0.9. Here, the curve shown by the broken line when L e /L is out of the hatched range in Figure 3, L e /L = 0.5, is:
In FIG. 2, at the time t=t p , u C remains, which is a state in which no mode is applied. Also L e /L
20≦Z p ≦40 shown by the solid line in the curve when =0.6
The range of is the state where the mode rides, and is indicated by the dashed line.
The range of 40<Z p is a state in which no mode is applied.
Furthermore, all the curves when L e /L < 0.7 are in the mode, and the output power P put is also 180W to 50W.
The range of degrees changes smoothly. From the above results, it was found that in the above example, the value of Z p should be selected within the range of 20 to 80 Ω.

第4図から明らかなように、特性インピーダン
スZpの選定範囲は、Ep′/Ei,Le/L、必要と
する出力電力Pputの大きさ、およびモードが乗
る範囲により定まる。従つて一般にZpを選定す
る場合には、まずEp′/EiおよびLe/Lの各値
が第3図の斜線部に入るように選定するととも
に、必要とする出力電力Pputの値を定め、しか
るのちモードが乗る状態になるようZpを選定す
る。
As is clear from FIG. 4, the selection range of the characteristic impedance Z p is determined by E p '/E i , L e /L, the magnitude of the required output power P put , and the range in which the mode rides. Therefore, when selecting Z p , first select so that each value of E p '/E i and L e /L falls within the shaded area in Figure 3, and also select the required output power P put . After determining the value, Z p is selected so that the mode is on.

次に出力電力PputはTpo/Tの関数であるが、
この関係をEi=130V、Zp=40Ωの場合について
p′をEp′=100、140、150Vとパラメータにして
示したのが第5図である。これよりTpo/Tを
0.15〜0.45まで変えたときの出力電力Pputの変化
は35〜270Wまでほとんど直線的に増加すること
がわかる。
Next, the output power P put is a function of T po /T,
FIG. 5 shows this relationship with E p '=100, 140, and 150 V as parameters for E i =130 V and Z p =40 Ω. From now on, T po /T
It can be seen that the change in output power P put when changed from 0.15 to 0.45 increases almost linearly from 35 to 270W.

なお、第1図に示した回路構成自体はテレビジ
ヨン受像機の高圧発生回路と同じであるが、この
高圧発生回路と本発明とでは次のような相異点が
ある。第1点はEp′の選び方が極端に異なること
である。すなわちテレビジヨン受像機の高圧発生
回路ではフライバツクパルスを昇圧して受像管の
アノードに加える高電圧を得る目的でEp′はEi
の10〜30倍程度にするのに対して、この発明では
p′は1/2Ei〜2Ei程度にする。第2点として第
1図のLとLeの選び方が著しく異なる。すなわ
ち高圧発生回路の場合LeはLの数%以下にする
が、この発明では第3図に示したようにLe/L
はEp′/Eiの関数であり、LeはLの10%以上、
例えばEp′/Ei=1のA点の場合を例にとると
70%以上となる。第3点は変成器の出力端に並列
に入る二次巻線の浮遊容量が、高圧発生回路の場
合は付加インダクタンスLeと呼応してフライバ
ツクパルスの波形や走査期間のリンギング波形に
著しく悪影響を与えるのに対し、この発明ではス
イツチング素子のスイツチング周波数が高く、変
成器第二次巻線の巻数が少ないことから、この浮
遊容量は1〜5PF程度と非常に小さいためこの浮
遊容量の存在は全く問題にならないという点であ
る。
Although the circuit configuration itself shown in FIG. 1 is the same as the high voltage generating circuit of a television receiver, there are the following differences between this high voltage generating circuit and the present invention. The first point is that the selection of E p ' is extremely different. In other words, in the high voltage generation circuit of a television receiver, E p ' is E i
In contrast, in the present invention, E p ' is set to be approximately 1/2E i to 2E i . The second point is that the selection of L and L e in FIG. 1 is significantly different. That is, in the case of a high voltage generation circuit, L e is set to be several percent or less of L, but in this invention, as shown in FIG. 3, L e /L
is a function of E p ′/E i , L e is 10% or more of L,
For example, if we take the case of point A where E p ′/E i =1,
70% or more. The third point is that in the case of a high voltage generation circuit, the stray capacitance of the secondary winding connected in parallel to the output terminal of the transformer, in conjunction with the additional inductance L e , has a significant negative effect on the waveform of the flyback pulse and the ringing waveform during the scanning period. On the other hand, in this invention, the switching frequency of the switching element is high and the number of turns of the transformer secondary winding is small, so this stray capacitance is very small at about 1 to 5 PF, so the existence of this stray capacitance is The point is that it is not a problem at all.

以上詳細に説明したように、この発明によれば
スイツチング素子をスイツチング損失のない理想
スイツチに近い状態で使うことができるので電力
伝達効率が向上する。この効果は第6図から明ら
かである。すなわち第6図aは直流電圧を単にチ
ヨツプしたときのASO(Area Safety
Operation)曲線であり、スイツチング素子が導
通するときや断になるときの過渡期にそれぞれ電
圧、電流が残つているために全体として矩形とな
る。この場合矩形の面積が損失となる。これに対
しこの発明におけるASO曲線は第6図bのよう
になる。すなわちスイツチング素子が断になると
きはその両端電圧が零になつており、一方導通に
なるときは若干電圧は残つているが零になるまで
の軌跡長が第6図aと比べはるかに短くなつてい
ることが分る。従つてスイツチング素子での損失
は非常に少なくなる。
As described in detail above, according to the present invention, the switching element can be used in a state close to an ideal switch without switching loss, thereby improving power transfer efficiency. This effect is clear from FIG. In other words, Figure 6a shows the ASO (Area Safety) when the DC voltage is simply chopped.
The curve is rectangular as a whole because voltage and current remain during the transition period when the switching element becomes conductive or disconnected. In this case, the area of the rectangle becomes a loss. On the other hand, the ASO curve in this invention is as shown in FIG. 6b. In other words, when the switching element is disconnected, the voltage across it has become zero, while when it is conductive, some voltage remains, but the trajectory length until it reaches zero is much shorter than in Figure 6a. I can see that Therefore, the loss in the switching element becomes extremely small.

また、この発明によれば上述のようにスイツチ
ング素子が導通になるときはその両端に電圧がほ
とんどなく、断になるときは電流が流れていない
ようにできるので、第7図に示したスイツチング
素子における電圧、電流波形からも明らかなよう
に、不要な過渡応答は発生しない。これは雑音対
策として非常に有効である。
Furthermore, according to the present invention, as described above, when the switching element becomes conductive, there is almost no voltage across it, and when it becomes disconnected, no current flows, so that the switching element shown in FIG. As is clear from the voltage and current waveforms at , no unnecessary transient response occurs. This is very effective as a noise countermeasure.

なお、この発明は第1図に示した構成に限定さ
れるものではなく、例えば等価的にインダクタン
スLeの中間にタツプを有し、インダクタンスの
一端がそのタツプに接続された構成の場合でも同
様に実施可能である。
Note that the present invention is not limited to the configuration shown in FIG. 1; for example, the same applies to a configuration in which a tap is equivalently provided in the middle of the inductance L e and one end of the inductance is connected to the tap. It is possible to implement

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す回路構成
図、第2図はその動作を説明するための各部波形
図、第3図〜第5図はこの発明における各部の数
値の選定条件を説明するためのグラフ図、第6図
a,bはスイツチング素子のASO曲線を示す
図、第7図はこの発明におけるスイツチング素子
の電圧および電流波形を示す図である。 1…入力直流電源、2…電力伝達用変成器、3
…スイツチング素子、6…共振用コンデンサ、7
…ダンパーダイオード、8…整流ダイオード、9
…平滑コンデンサ。
Fig. 1 is a circuit configuration diagram showing one embodiment of this invention, Fig. 2 is a waveform diagram of each part to explain its operation, and Figs. 3 to 5 explain selection conditions for numerical values of each part in this invention. FIGS. 6a and 6b are graphs showing the ASO curve of the switching element, and FIG. 7 is a diagram showing the voltage and current waveforms of the switching element in this invention. 1... Input DC power supply, 2... Power transmission transformer, 3
...Switching element, 6...Resonance capacitor, 7
...damper diode, 8...rectifier diode, 9
...smoothing capacitor.

Claims (1)

【特許請求の範囲】[Claims] 1 入力直流電源に変成器の一次側巻線を介して
スイツチング素子を接続するとともに、前記変成
器の一次側巻線と並列共振するよう共振用コンデ
ンサを接続し、変成器の二次側に生ずる電圧を整
流、平滑して直流出力を得る装置において、変成
器二次側のインダクタンスと変成器自身の洩れイ
ンダクタンスとの和の変成器一次側への換算値
Leと変成器一次側のインダクタンスLとの比
Le/Lを縦軸に、また出力電圧の変成器一次側
への換算値Ep′と入力電圧Eiとの比Ep′/Ei
横軸にとつたときのEp′/Ei、Le/L)の値が
(0.4、0.8)の点P、(0.7、0.8)の点Q、(1.0、
0.7)の点A、(1.3、0.44)の点R、(1.54、0.1)
の点S、(10.0、0.1)の点T、(10.0、10.0)の点
U、(0.4、10.0)の点Oを結んだ閉じ折れ線で囲
まれた範囲内に入るようにLe/LとEp′/Ei
の関係を選定したことを特徴とする高周波スイツ
チング装置。
1. A switching element is connected to the input DC power supply via the primary winding of the transformer, and a resonance capacitor is connected so as to resonate in parallel with the primary winding of the transformer, so that the switching element is connected to the input DC power supply through the primary winding of the transformer. In a device that rectifies and smoothes voltage to obtain DC output, the value converted to the transformer primary side of the sum of the inductance on the secondary side of the transformer and the leakage inductance of the transformer itself.
The ratio of Le to the inductance L on the primary side of the transformer
E p '/E when Le/L is plotted on the vertical axis and the ratio E p '/E i between the converted value E p ' of the output voltage to the transformer primary side and the input voltage E i is plotted on the horizontal axis. i , Le/L) is (0.4, 0.8) at point P, (0.7, 0.8) at point Q, (1.0,
Point A at (0.7), Point R at (1.3, 0.44), (1.54, 0.1)
Le/L and E so that they fall within the range surrounded by the closed line connecting point S of , point T of (10.0, 0.1), point U of (10.0, 10.0), and point O of (0.4, 10.0). A high frequency switching device characterized in that the relationship between p '/E i is selected.
JP3048279A 1979-03-15 1979-03-15 Single-ended-high-frequency-switching-type power supply Granted JPS55122480A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3048279A JPS55122480A (en) 1979-03-15 1979-03-15 Single-ended-high-frequency-switching-type power supply
US06/129,405 US4318164A (en) 1979-03-15 1980-03-11 High frequency switching circuit having preselected parameters to reduce power dissipation therein
GB8008216A GB2050081B (en) 1979-03-15 1980-03-11 High frequency switching regulator circuit
FR8005824A FR2451671B1 (en) 1979-03-15 1980-03-14 HIGH FREQUENCY SWITCHING CIRCUIT
CA347,679A CA1127247A (en) 1979-03-15 1980-03-14 High frequency switching circuit having preselected parameters to reduce power dissipation therein
DE3009963A DE3009963C2 (en) 1979-03-15 1980-03-14 High frequency circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3048279A JPS55122480A (en) 1979-03-15 1979-03-15 Single-ended-high-frequency-switching-type power supply

Publications (2)

Publication Number Publication Date
JPS55122480A JPS55122480A (en) 1980-09-20
JPS626425B2 true JPS626425B2 (en) 1987-02-10

Family

ID=12305052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3048279A Granted JPS55122480A (en) 1979-03-15 1979-03-15 Single-ended-high-frequency-switching-type power supply

Country Status (1)

Country Link
JP (1) JPS55122480A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3427492A1 (en) * 1984-07-26 1986-01-30 Philips Patentverwaltung Gmbh, 2000 Hamburg CIRCUIT ARRANGEMENT FOR SWITCHING THE CURRENT IN AN INDUCTIVE LOAD
DE19745008A1 (en) * 1997-10-11 1999-04-15 Bosch Gmbh Robert Procedure for controlling switching ratio of final control element of forward DC converter with resonance- determining devices

Also Published As

Publication number Publication date
JPS55122480A (en) 1980-09-20

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