JPS627654B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an image pickup device for color television or the like having a built-in color separation filter.

This type of imaging device has a color separation filter and a transparent conductive film laminated, but the adhesion of dust during the manufacturing process has traditionally been a major problem.

FIG. 1 shows an example of a conventional manufacturing method for an imaging device. First, as shown in FIG. After forming the transparent conductive film 2 on the entire surface, the transparent conductive film 2 is selectively etched, for example, in the form of stripes (FIGS. 1B and 1C). There is also a type that does not have the stripe pattern etched. Next, after attaching the glass plate 3 for temporary fixing on the striped transparent conductive film 2, the thin glass plate 1 is attached to a thickness of about 20 μm.
(Fig. 1 D and E). This thin glass plate 1 is used for insulation between the transparent conductive film 2 and the color separation filter. On the other hand, a filter substrate 6 consisting of a color separation filter 5 divided into stripes is provided on a face plate 4 made of transparent glass, and this filter substrate 6 and the previously provided transparent conductive film substrate 7 are attached. (Figure 1 F). Next, after chamfering 8, a through hole 9 into which an index pin is to be inserted is formed across the filter substrate 6 and the transparent conductive film substrate 7 (FIG. 1 G and H), and then as shown in FIG. 1 I. As shown, the temporary fixing glass plate 3 is removed, an index pin 10 electrically connected to the transparent conductive film 2 is inserted into the through hole 9, and a photoconductive film 11 (for example, _Se -A _{s -Te} system, Sb ₂ S ₃ system, etc.). FIG. 1 I' shows a pattern of the transparent conductive film 2.

By the way, in such a manufacturing method, when the transparent conductive film 2 is deposited on the thin glass 1, the dust 12 is inevitably attached to the thin glass 1, and as a result, the transparent conductive film 2 is coated with dirt. A protrusion 13 is formed by the dust 12. It is impossible to completely remove the dust 12 with current technology, and therefore the protrusions 13 are necessarily formed on the transparent conductive film 2. When the transparent conductive film 2 has a stripe pattern, as shown in the enlarged view of FIG. When the protrusion 13 is formed, the electric field is concentrated there, and the photoconductive film 1
Breakdown is likely to occur in 1. This breakdown phenomenon appears as white flaws on the screen and deteriorates the image quality. This white spot gradually spreads. Further, when _the photoconductive film 11 _{is of the} S _{e -A s} -T _e system, that is, in _FIG . , S _e −A _s
- Sensitized layer 16 of T _e , second protective layer 1 of S _e -A _s
7. When consisting of a capacitive layer 18 of S _e −A _s and a beam landing layer 19 of porous S _b2 S ₃ , the S
_e is sensitive to heat. Therefore, once breakdown occurs, the temperature rises due to overcurrent and crystallization of S _e progresses.
When S _e crystallizes, red sensitivity deteriorates. The dust 12 produced during the manufacturing process becomes the so-called core of crystallization of the photoconductive film 11, which is undesirable. A 1μ white flaw in the imaging device is magnified to 1mm in the picture tube, so the 1μ
White flaws and 1 μm dust from manufacturing cannot be ignored.

Adhesion of dust also occurs when making the filter substrate 6, and when the transparent conductive film substrate 7 and the filter substrate 6 are bonded together, the thin glass 1 breaks due to the presence of dust. The poor yield due to this cracking has the greatest impact on the yield of this type of imaging device.

Furthermore, in the conventional manufacturing method described above, the distance _l1 between the color separation filter 5 and the photoconductive film 11 is large, as shown in FIG. That is, a thin glass 1 of 20 μm, an adhesive layer 20 of 1 to 2 μm, and a transparent conductive film 2 of 1000 Å.
Therefore, the distance is approximately 20μ. If this interval _l1 is large, light scattering will increase while the signals separated by the color separation filter 5 are transmitted to the photoconductive film 11.
That is, signal transmission cannot be performed faithfully, resulting in deterioration in resolution, color reproducibility, and S/N.

On the other hand, as a method of shortening the distance between the color separation filter and the photoconductive film 11 and eliminating the influence of dust, for example, the manufacturing method shown in FIGS. 4A to 4E can be considered. The transparent conductive film 2 is sprayed, _vapor -deposited, or
The intermediate layer 22 is deposited thereon by a method such as CVD (chemical vapor deposition), and the intermediate layer 22 is deposited thereon by CVD, vapor deposition, coating, or the like. As the intermediate layer 22, boron silicate glass (BSG), phosphosilicate glass (PSG),
Aluminosilicate glass (ASG), pure S _i O ₂ , S _i O
etc. can be used. Next, a filter substrate 6 on which a color separation filter 5 is provided on the surface of a face plate 4 made of transparent glass is laminated onto the intermediate layer 22, and then the auxiliary plate 21 is removed by means such as polishing or etching. A photoconductive film 11 is formed on the transparent conductive film 2 facing the surface.

According to such a manufacturing method, even if dust is deposited on the auxiliary plate 21 and the transparent conductive film 2 is deposited thereon, the transparent conductive film 2 is eventually reversed and attached to the filter substrate 6. Therefore, the dust portion of the transparent conductive film 2 becomes concave and has a shape that makes it difficult for electric field concentration to occur. Furthermore, the distance l ₂ between the color separation filter 5 and the photoconductive film 11 is also reduced because the intermediate layer 22 is formed thinly by CVD, vapor deposition, or the like. However, in the actual process, when removing the auxiliary plate 21 by, for example, polishing, there is no cutting allowance, so it is not possible to accurately remove only the auxiliary plate 21. Also, when removing the auxiliary plate 21 by etching, since there is a pinhole in the transparent conductive film 2, the intermediate layer 22 under the transparent conductive film 2 is etched through the pinhole, and the surface of the transparent conductive film 2 is also etched by the etching solution. It has the disadvantage of being ruined.

Further, as a manufacturing method that should solve such drawbacks, for example, the manufacturing methods shown in FIGS. 5A to 5F can be considered. This is the necessary thickness X to finally have translucency on the auxiliary plate 21 made of silicon (S _i ), glass, etc.
An intermediate layer 22 thicker than the intermediate layer 22 is deposited, and a transparent conductive film 2 is deposited thereon. Next, this is temporarily fixed to the glass frame 23. When low-temperature wax is used for this temporary fixing, the pedestal 23 can be easily removed by simply heating it in a subsequent process. Next, the auxiliary plate 21 is removed by polishing, etching, etc., and the intermediate layer 22 is removed so that the required thickness X remains. Thereafter, the filter substrate 6 is bonded to the surface of the intermediate layer 22, and after the pedestal 23 is removed, the photoconductive film 11 is formed on the transparent conductive film 2 on the surface thereof.

In this manufacturing method, since the relatively thick intermediate layer 22 is interposed between the auxiliary plate 21 and the transparent conductive film 2, even when the auxiliary plate 21 is removed by grinding or etching, the transparent conductive film Can be removed accurately without damaging the membrane. Furthermore, the distance _l3 between the color separation filter 5 and the photoconductive film 11 can be reduced by controlling the thickness X when removing a portion of the intermediate layer 22 as shown in FIG. 5D. However, in this manufacturing method, when it comes to dust, protrusions are formed on the transparent conductive film 2, as in the conventional example shown in FIG. 1, and the drawback of dust cannot be eliminated.

The present invention solves the above-mentioned conventional drawbacks and eliminates the poor yield of imaging devices due to dust adhesion during manufacturing, and also reduces the distance between the color separation filter and the photoconductive film to improve resolution, color reproducibility, and S. The present invention provides a method for manufacturing an imaging device that improves /N.

Hereinafter, a method for manufacturing an imaging device according to the present invention will be described in detail with reference to Examples.

FIG. 6 shows an embodiment of the present invention. First, 6th
A pedestal 31 is provided as shown in Figure A. The frame 31 is made of glass with a thickness of about 1 mm or a thickness of 200 μm or more.
Silicon wafers of 300μ can be used, and silicon wafers, among others, have a flat surface by mirror polishing and do not attract dust due to static electricity, and are hard, so they can be cleaned by rubbing the surface. Cleaning by mechanically scrubbing the surface is said to be the most effective way to remove dust.

A separation layer 32 is formed on one main surface of this pedestal 31 (FIG. 6B). The separation layer 32 is made of a super heat-resistant polymer such as a polyimide-based heat-resistant resin, or S _i O ₂ , and is coated to a thickness of 10 to 20 microns. The separation layer 32 is preferably made of a super heat-resistant polymer, since heat of around 400°C will be applied when forming the transparent conductive film in the subsequent process using the CVD method.
When sputtering a transparent conductive film, it does not need to be super heat resistant. In this step, the dust on one main surface of the pedestal 31 is buried in the separation layer 32.

Next, a transparent conductive film 2 made of S _{O 2} or I _{O 2} O ₃ is deposited on the surface of the separation layer 32 by a method such as CVD or sputtering, and then this transparent conductive film 2 is formed into a predetermined pattern. That is, it is etched into a striped comb pattern as shown in FIG. 1I' (FIG. 6C and D).

Next, a glass-based intermediate layer 33 with good translucency is deposited on the upper surface including the transparent conductive film 2 (FIG. 6E). As the intermediate layer 33, for example, boron silicate glass (BSG), phosphosilicate glass (PSG), aluminosilicate glass (ASG), pure S _i O ₂ or S _i O, etc. are used, and the intermediate layer 33 is formed by CVD, vapor deposition, sputtering, etc. Adhesive formation. In this case, the intermediate layer 33 fills in the steps of the striped transparent conductive film 2, making the surface flat. This alleviates the electric field concentration at the corners of each striped transparent conductive film during subsequent operation.
Further, this intermediate layer 33 can be formed to have a thickness of 1 to 2 microns.

Next, a color separation filter 5 divided into stripes is formed on the intermediate layer 23 (FIG. 6F). The color separation filter 5 is a gelatin filter (organic substance),
Alternatively, a dichroic filter (inorganic material) or the like may be used.

Next, a transparent face plate, ie, a glass substrate 4, for example, is bonded onto the color separation filter 5 via an adhesive (FIG. 6G). This adhesive can be made of translucent thermosetting resin or photocuring resin.

Next, the pedestal 31 is removed by polishing, etching, etc., the separation layer 32 is removed, and then the photoconductive film 11 is formed on the surface facing the transparent conductive film 2 (FIGS. 6H and I). and J). The photoconductive film 11 may be a conventional one such as the S _e -A _s -T _e system shown in FIG. 2 or the S _b2 S ₃ system.

In the above example, the transparent conductive film 2 was patterned immediately after the formation of the transparent conductive film 2 (in the step of FIG. 6D), but in other cases, the patterning was performed after the separation layer 32 removal step of FIG. 6I. The transparent conductive film 2 may be patterned. Further, during this patterning, if a super heat resistant polymer is used as the separation layer 32, fine processing can be performed by utilizing the properties of the super heat resistant polymer, that is, the etching characteristics. That is, when a super heat-resistant polymer is etched, the etched cross section becomes an inclined plane of about 45 degrees. Therefore, for example, as shown in FIG. 7A (corresponding to the process in FIG. 6H),
After removing the pedestal 31, a color separation filter 5, an intermediate layer 33, a transparent conductive film 2, and a separation layer 32 made of a super heat-resistant polymer are sequentially formed on the glass substrate 4. After depositing a photoresist layer 34 (FIG. 7B) and then opening windows in the desired pattern in the photoresist layer 34 (FIG. 7C), the separation layer 32 is selectively etched through the windows 35. . By this selective etching, the separation layer 32 has a cross section of 45 mm as shown in FIG. 7D.
A window 36 is etched with an angle of .degree. to form a window 36 which is narrower than the window 35 in the photoresist layer. Thereafter, using the separation layer 32 as a mask, the underlying transparent conductive film 2 is selectively etched (FIG. 7E). According to this, for example, the thickness t ₁ of the separation layer 32 is 1μ,
When the width t ₂ of the window 35 of the photoresist layer 34 is set to 3μ, a window 36 with a width t ₃ =1μ is formed in the separation layer 32, and the transparent conductive film 2 is etched with a width of 1μ, so that the transparent conductive film 2 becomes possible, and the accuracy of the etching mask can be increased.

According to the manufacturing method of the present invention described above, the transparent conductive film 2 is formed on the pedestal 31 via the separation layer 32, and finally the pedestal 31 and the separation layer 32 are removed, the transparent conductive film 2 is inverted, and the transparent conductive film 2 is placed on top of it. Since the photoconductive film 11 is formed, the dust on the pedestal 31 is removed from the separation layer 32.
A flat transparent conductive film 2 without any protrusions is obtained. Furthermore, even if influenced by dust, the transparent conductive film 2 is inverted, so that the dusty part of the transparent conductive film 2 becomes a concave portion, which weakens the electric field concentration. Therefore, local breakdown between the transparent conductive film 2 and the photoconductive film 11 is less likely to occur, and so-called white flaws are less likely to occur. In addition, since the transparent conductive film 2, the intermediate layer 33, and the color filter are formed by sequentially stacking them in a series of steps, the intermediate layer 33 does not crack due to dust as described above in the prior art. Therefore, poor yields of imaging devices due to dust adhesion during manufacturing can be eliminated.

Furthermore, since the intermediate layer 33 is formed with a thickness of 1 to 2 μm and no adhesive layer is interposed between the intermediate layer 33 and the color separation filter 5, the distance _l4 between the color separation filter 5 and the photoconductive film 11 is extremely small. This makes it possible to faithfully transmit signals separated by the color separation filter 5, improving resolution, color reproducibility, and S/N.

Furthermore, since the dust from the pedestal 31 is buried in the separation layer 32, the transparent conductive film 2 can be formed not only by sputtering but also by a spraying method at around 400°C. The intermediate layer 33 is not only sputtering.
It can also be formed using the CVD method.

Another problem is the size of the dust that adheres during the formation of the color separation filter 5, but this dust is buried in the adhesive when the color separation filter and the glass substrate 4 are bonded together in the process shown in FIG. 6G. No problem with white scratches.

Furthermore, since the color separation filter 5 is formed after the formation of the intermediate layer 33 and the transparent conductive film 2, which are deposited by raising the substrate temperature using CVD method, etc., there are problems such as discoloration of the color separation filter 5 and other limitations. A good color separation filter 5 can be obtained without any problems.

FIG. 8 shows another embodiment of the present invention, in which a transparent conductive film substrate and a filter substrate are made separately and then combined together. That is, first, as shown in FIGS. 8A to 8D (this is the same process as in FIGS. 6A to 6E above), a super heat-resistant polymer is placed on a pedestal 31 made of glass or silicon wafer, etc. After forming a separation layer 32 such as the following, and then forming a transparent conductive film 2 etched in a predetermined pattern, an intermediate layer 33 made of glass or the like with good translucency is formed on the entire surface including the transparent conductive film 2. A so-called transparent conductive film substrate 37 is formed. On the other hand, as shown in FIG. 8E, a filter substrate 38 has a color separation filter 5 made of an organic or inorganic substance formed on a glass substrate 4 serving as a face plate.
will be established. Then, the filter substrate 38 and the transparent conductive film substrate 37 are bonded to each other with an adhesive as shown in FIG. A photoconductive film 11 is formed on the facing surface (FIG. 8G and H).

Here, the filter substrate 38 can be made as shown in FIGS. 9A to 9F. That is, a pedestal 41 made of glass or silicon wafer or the like is prepared,
A protrusion-covering film 42 made of polyimide resin or the like and having a thickness of several micrometers is formed on one surface thereof. Then, the color separation filter 5 is formed on this protrusion-covering film 42. The dust 43 on the pedestal 41 is removed by this protrusion-covering film 4.
2 and does not affect the color separation filter 5.
Next, a glass substrate 4, which will become a face plate, is bonded onto the color separation filter 5 via an adhesive. At this time, the dust 44 on the color separation filter 5 is absorbed by the adhesive. Thereafter, the pedestal 41 is removed by polishing and etching, and then the protrusion covering film 42 is removed. Note that, if the protrusion-covering film 42 has sufficient light-transmitting properties, it does not need to be removed. In this way, a filter substrate with no dust on its surface can be obtained.

Also in the manufacturing method shown in FIG. 8 described above, protrusions due to dust are not formed on the surface of the transparent conductive film 2 in contact with the photoconductive film 11, the occurrence of white scratches is reduced, and the intermediate layer 33 is formed thinly, so that the color is reduced. The distance between the separation filter 5 and the photoconductive film 11 is reduced, and an imaging device with improved resolution, color reproducibility, and S/N ratio can be obtained.

Although each of the above-mentioned embodiments has been described as a single unit, in actual manufacturing, it is conceivable to form a plurality of units at the same time. As a method for forming a plurality of layers at the same time, for example, a common pedestal 31 is provided as shown in FIGS. 10 and 11, and separation layers 3 are formed at a plurality of predetermined positions on this pedestal 31, respectively, as shown in FIG.
2. A laminate 45 is formed in which the transparent conductive film 2, the intermediate layer 33, the color separation filter 5, and the glass substrate 4 are laminated in this order.Then, the laminate 45 is separated one by one by punching along the chain line 46, and then the mount is assembled. 31 and separation layer 32 are removed.

Incidentally, FIGS. 12A to 12E show an example of how to take out the index electrode. This example is a case where the manufacturing method shown in FIG. 8 is applied, in which an index pin 10 made of, for example, cobalt is embedded in advance in a glass substrate 4 that will become a face plate, and a color separation filter 5 is formed on the surface of the index pin 10 to form a filter substrate 38. do. To this filter substrate, a transparent conductive film substrate 37 shown in FIG. 32 (FIG. 12B), the intermediate layer 33 and adhesive are removed at the portions corresponding to the index pins 10 by sandblasting or the like in order to establish conduction between the transparent conductive film 2 and the index pins 10. The layer of agent is removed to expose the index pin 10. Next, a metal layer 48 of C _r , _Au or the like is deposited by vapor deposition or the like so as to span the removed portion 47 and the transparent conductive film 2 to establish electrical conduction between the transparent conductive film 2 and the index pin 10 . According to this extraction method, there is no need to drill a hole for inserting the index pin 10 as in the prior art, and the number of man-hours is reduced. This method of taking out the index electrode can also be applied to the embodiment shown in FIG. 6
After the process shown in FIG. 1, a portion of the intermediate layer 33 may be removed and the metal layer 48 may be deposited.

As described above, according to the present invention, it is possible to avoid the adverse effects of dust during manufacturing, to obtain an imaging device with high reliability and good yield, and to obtain an imaging device with good resolution, color reproducibility, S/N, etc. is obtained.

[Brief explanation of the drawing]

1A to 1I are process diagrams showing an example of a conventional method for manufacturing an imaging device, FIG. 1I' is a plan view showing a pattern of an index electrode, and FIGS. 2 and 3 are enlarged views of essential parts, respectively. 4 A to E and 5 A to F are manufacturing process diagrams for explaining the present invention, and FIGS. 6 A to J.
7A to 7E are process diagrams showing one embodiment of the method for manufacturing an imaging device of the present invention, and FIGS. 8A to 8H are process diagrams illustrating another embodiment of the present invention. 9A to 9F are process diagrams showing an example of the manufacturing method of the filter substrate used in FIG. 8, and FIGS. 10 and 11 are side views and diagrams showing still other embodiments of the present invention The plan view and FIG. 12 are process diagrams showing an example of a method for taking out an index electrode that can be applied to the present invention. 2 is a transparent conductive film, 4 is a face plate, 5 is a color separation filter, 31 is a mount, 32 is a separation layer, 3
3 is an intermediate film.

Claims (1)

[Claims] 1. A step of forming a transparent conductive film on a pedestal via a separation layer, then laminating a transparent glass film having a final thickness, and a step of forming a color separation filter device on the transparent glass film. and a step of removing the pedestal and separation layer after this step.