JPS628015B2 - - Google Patents
Info
- Publication number
- JPS628015B2 JPS628015B2 JP55100786A JP10078680A JPS628015B2 JP S628015 B2 JPS628015 B2 JP S628015B2 JP 55100786 A JP55100786 A JP 55100786A JP 10078680 A JP10078680 A JP 10078680A JP S628015 B2 JPS628015 B2 JP S628015B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- patterns
- scattering intensity
- intensity distribution
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Description
〔概要〕
近接効果を補正するために、パターン内部、お
よび隣接パターン間の電子散乱の影響を検知する
被測定用描画パターンを用いて、電子散乱強度分
布式の各パラメータを少ない測定点で簡単に求め
る方法を提起する。
〔産業上の利用分野〕
本発明は電子ビームリソグラフイにおける近接
効果を補正するための電子散乱強度分布の測定方
法に関する。
〔従来の技術〕
電子ビーム露光において、レジスト中に照射さ
れた電子は、レジスト中で前方散乱と基板からの
反射による後方散乱を生じ、電子が照射された領
域より広い範囲にわたつて散乱する。
このため、複数個の描画パターンが描画の際の
電子の散乱距離よりも近接している場合は、とな
りのパターンの散乱電子の影響を受け、目的とす
るパターン寸法が得られなくなるという問題があ
り、このことは近接効果として知られている。
従つて、微細パターンを高密度に電子ビームで
露光する場合、目的とするパターン精度を得るた
めに前記近接効果を補正する露光方法が必要であ
る。
一般に、近接効果の補正は電子散乱強度分布
と、パターン形状、およびパターンの近接度を考
慮して各パターンに最適な電子ビームの照射量を
あたえることによつて行われている。
従つて、近接効果の補正を行うために、レジス
ト中の電子散乱強度分布をあらわす式をあらかじ
め求めて置く必要がある。
この電子散乱強度分布式として、下記(1)式が一
般に知られている。
ｆ（Ｒ）＝exp〔−（Ｒ／Ｃf）２〕＋η exp〔−（Ｒ／Ｃb）２〕． (1)
ここで、Ｒは電子ビームの中心からの距離、Ｃ
fは前方散乱係数、Ｃbは後方散乱係数、ηは前方
散乱強度と後方散乱強度の比である。
さらに、電子散乱強度分布は使用するレジスト
材料、現像条件、基板材料、電子ビームの加速電
圧等に依存する。従つて、これらの条件のいずれ
か１つが異なる場合はその都度(1)式のパラメータ
Ｃf，Ｃb，ηを求め直すことが必要となる。
従来、上記の電子散乱強度分布式はつぎの手順
で求められていた。
すなわち、ポジ、あるいはネガレジスト層に対
して、微小な円形形状の電子ビームをその照射時
間を変えることにより種々の照射量Ｑiで露光
し、一定条件で現像後、形成されたレジストパタ
ーンの中心を通つて切断し、パターン断面の基板
との境界における直径2Riを測定する。
第１図１，２はそれぞれポジレジストパターン
とネガレジストパターンの現像後の断面を示し、
１は基板、２はポジレジスト層、３はネガレジス
ト層、２Ｒは測定するパターン幅である。
一方、電子ビームの照射量Ｑと電子散乱強度分
布式ｆ（Ｒ）の関係は下記(2)式であらわされる。
Ｑ・ｆ（Ｒ）＝E. (2)
ここで、Ｅはレジスト内に照射されたエネルギ
をあらわす。
いま、照射量Ｑiに対して形成されたパターン
幅が2Riのとき(2)式は
Ｑi・ｆ（Ｒi）＝Ｅp． (3)
であらわされ、Ｅpは現像処理においてレジスト
が現像されるしきい値エネルギ（現像レベルエネ
ルギ）である。
種々の照射量Ｑiに対して、形成さたパターン
の幅2Riの1/2、すなわちパターンの中心から縁部
までの距離Ｒiをプロツトして第２図に示すよう
な電子散乱強度分布曲線ｆ（Ｒ）を描き、かつこ
れらの測定点４から最小自乗法等により、仮定し
た電子散乱強度分布式(1)の各パラメータＣf，Ｃ
b，ηを求めていた。
〔発明が解決しようとする問題点〕
従来方法においては、測定点を数多くとる必要
があり、また微細パターンの中心部での切断と、
その測長が必要であり、そのために試料作りと測
定に時間がかかつた。
〔問題点を解決するための手段〕
第３図１〜４は本発明を説明する被測定用の描
画パターン図である。
上記問題点の解決は、異なる寸法を有する２種
類の単独パターン（パターンと）と、パター
ンの両側に単数または複数の隣接パターンを有す
る２種類のパターン群（パターンと）とより
なる被測定用の描画パターンによりレジストパタ
ーンを形成し、該レジストパターンの寸法を測定
して求める電子散乱強度分布の測定方法によつて
達成される。
すなわち、上記の描画パターンを用いると電子
散乱強度分布式の各パラメータを少ない測定点で
簡単に求めることができる。
〔作用〕
本発明の被測定用描画パターンを用いると、パ
ターンとによりパターン内部での散乱効果の
影響を、隣接パターンよりなるパターンとに
よりパターン相互間の近接効果の影響を同時に抽
出できるため、電子散乱強度分布式の各パラメー
タを少ない測定点で簡単に求めることができる。
〔実施例〕
本発明の一実施例を、第３図に示す被測定用の
描画パターン図、第４図に示す上記描画パターン
を露光現像した後のレジストパターンの断面図、
および第５図に示す電子散乱強度説明用の平面図
を用いて説明する。
第３図に示すように被測定用の描画パターンは
つぎのとおりである。
パターンは例えば、
幅Ｗ＝１μｍ、長さＨ＝１mmの矩形パターン５
よりなる単独パターンである。
パターンは例えば、
幅W′＝２μｍ、長さＨ＝１mmの矩形パターン
６よりなる単独パターンである。
パターンは矩形パターン５と同形の矩形パタ
ーン７と、その両側に間隔Ｗを隔てて配置された
同形の矩形パターン８，９とよりなるパターン群
である。
パターンは矩形パターン５と同形の矩形パタ
ーン１０と、各が間隔Ｗを隔ててその両側に各２
個ずつ配置された同形の矩形パターン１１，１
２，１３，１４とよりなるパターン群である。
上記のパターンとは幅が異なり、パターン
内部での散乱効果の影響を特徴づけるパターンで
あり、パターンとは同一幅を有する複数のパ
ターンが等間隔に配置されたパターン群で、パタ
ーン相互間の近接効果の影響を特徴づけるパター
ンである。
つぎに、この被測定用の描画パターンにより基
板上に塗布したレジスト層を露光して形成したレ
ジストパターンを用いて電子散乱強度分布式の各
パラメータを求める。
まず、製造工程に使用する基板と同じ基板上
に、製造工程に使用するレジスト、例えばポジレ
ジスト層を塗布し、前記被測定用の描画パターン
の５，６，７，１０については照射量ｑで、隣接
パターン８，９，１１，１２，１３，１４につい
ては照射量Ｑで描画する。
ついで、このレジスト層を製造工程と同じ条件
で現像し、各パターンの長さ方向に直角に切断し
てパターン断面を露出させる。
第４図１〜４はそれぞれ第３図１〜４に対応す
るパターン〜の断面図である。
図において、幅の広い単独パターン６はパター
ン内部での散乱効果により幅の狭い単独パターン
５に比べ拡がつて形成され、また同一幅を有する
パターン群において隣接パターンをもつものはパ
ターン相互間の近接効果により幅広く形成される
ことが分かる。
つぎに、このように露出したパターン断面につ
いて、第３図の各パターン５，６，７，１０の中
心Ｏからパターン縁部X1，X2，X3，X4までの距
離r1，r2，r3，r4を測定し、
またX3，X4の点では隣接パターンの近接効果
の影響を受けるので、これらの点と隣接パターン
の中心との距離
r5＝2W−r3、r6＝2W＋r3、
r7＝2W−r4、r8＝4W−r4、
r9＝2W＋r4、r10＝4W＋r4、
は計算で求める。
ところで、第５図のような幅2a、長さ2bの矩
形パターン内を電子ビームスポツトが走査する
際、この矩形パターンの中心Ｏからｒ離れた点Ｐ
の電子散乱強度は前記(1)式を積分して下記(4)式で
あたえられる。
Ｆ（ｒ）＝∫ｂ −ｂ∫ａ −ａｆ（Ｒ）dxdy、 (4)
ここで
R2＝（ｒ cosθ−ｘ）２＋（ｒ sinθ−ｙ）2.
である。
(4)式に
パターンに対して、
ｒ＝r1、2a＝Ｗ、2b＝Ｈ、θ＝O.
パターンに対して、
ｒ＝r2、2a＝W′、2b＝Ｈ、θ＝O.
パターンに対して、
中央パターン７にｒ＝r3、
両側のパターン８，９にｒ＝r5、ｒ＝r6、
３個の全パターンに2a＝Ｗ、2b＝Ｈ、θ＝O.
パターンに対して、
中央パターン１０にｒ＝r4、
両側のパターン１１，１２，１３，１４に
ｒ＝r7、ｒ＝r8、ｒ＝r9、ｒ＝r10、
５個の全パターンに2a＝Ｗ、2b＝Ｈ、θ＝O.
をあたえる。
これらの計算によりパターン縁部のX1，X2，
X3，X4の各点の受けるエネルギを求める。
これらのエネルギは現像レベルエネルギＥpに
等しいから、下記(5)式の連立方程式が誘導され
る。
[Summary] In order to correct the proximity effect, each parameter of the electron scattering intensity distribution equation can be easily calculated with a small number of measurement points using a drawn pattern to be measured that detects the influence of electron scattering inside the pattern and between adjacent patterns. Present the method of seeking. [Industrial Application Field] The present invention relates to a method for measuring electron scattering intensity distribution for correcting proximity effects in electron beam lithography. [Prior Art] In electron beam exposure, electrons irradiated into a resist cause forward scattering in the resist and back scattering due to reflection from a substrate, and are scattered over a wider area than the area to which the electrons were irradiated. Therefore, if multiple drawing patterns are closer together than the scattering distance of electrons during drawing, there is a problem that the desired pattern dimensions cannot be obtained due to the influence of the scattered electrons of the neighboring patterns. , this is known as the proximity effect. Therefore, when exposing a fine pattern with an electron beam at high density, an exposure method that corrects the proximity effect is required in order to obtain the desired pattern accuracy. In general, the proximity effect is corrected by giving each pattern an optimum electron beam irradiation amount in consideration of the electron scattering intensity distribution, the pattern shape, and the proximity of the patterns. Therefore, in order to correct the proximity effect, it is necessary to determine in advance a formula representing the electron scattering intensity distribution in the resist. The following equation (1) is generally known as this electron scattering intensity distribution equation. f(R)=exp[-(R/C f ) 2 ]+η exp[-(R/C b ) 2 ]. (1) Here, R is the distance from the center of the electron beam, and C
f is the forward scattering coefficient, C b is the backscattering coefficient, and η is the ratio of the forward scattering intensity to the backscattered intensity. Further, the electron scattering intensity distribution depends on the resist material used, development conditions, substrate material, acceleration voltage of the electron beam, etc. Therefore, if any one of these conditions differs, it is necessary to recalculate the parameters C f , C b , and η in equation (1) each time. Conventionally, the above-mentioned electron scattering intensity distribution equation has been obtained using the following procedure. In other words, a positive or negative resist layer is exposed to a minute circular electron beam at various irradiation doses Q i by changing the irradiation time, and after development under certain conditions, the center of the formed resist pattern Measure the diameter 2R i at the boundary of the pattern cross section with the substrate. Figures 1 and 2 show cross sections of a positive resist pattern and a negative resist pattern after development, respectively.
1 is a substrate, 2 is a positive resist layer, 3 is a negative resist layer, and 2R is a pattern width to be measured. On the other hand, the relationship between the electron beam irradiation amount Q and the electron scattering intensity distribution equation f(R) is expressed by the following equation (2). Q·f(R)=E. (2) Here, E represents the energy irradiated into the resist. Now, when the pattern width formed for the irradiation amount Q i is 2R i , equation (2) is Q i · f (R i ) = E p . (3) where E p is the threshold energy (development level energy) at which the resist is developed in the development process. The electron scattering intensity distribution as shown in Fig. 2 is obtained by plotting 1/2 of the width 2R i of the formed pattern, that is, the distance R i from the center of the pattern to the edge, for various irradiation doses Q i . By drawing a curve f(R) and using the least square method etc. from these measurement points 4, each parameter C f , C of the assumed electron scattering intensity distribution formula (1) is calculated.
We were looking for b and η. [Problems to be solved by the invention] In the conventional method, it is necessary to take a large number of measurement points, and it is necessary to cut at the center of the fine pattern.
It was necessary to measure its length, which took time to prepare and measure the sample. [Means for Solving the Problems] FIGS. 3, 1 to 4 are diagrams of drawing patterns for the object to be measured for explaining the present invention. The solution to the above-mentioned problem is to create a measurement target consisting of two types of individual patterns (patterns) with different dimensions and two types of pattern groups (patterns) each having one or more adjacent patterns on both sides of the pattern. This is achieved by a method of measuring the electron scattering intensity distribution by forming a resist pattern using a drawing pattern and measuring the dimensions of the resist pattern. That is, by using the above drawing pattern, each parameter of the electron scattering intensity distribution equation can be easily obtained with a small number of measurement points. [Function] When the drawing pattern for measurement of the present invention is used, it is possible to simultaneously extract the influence of the scattering effect inside the pattern by the pattern, and the influence of the proximity effect between the patterns by the pattern consisting of adjacent patterns. Each parameter of the scattering intensity distribution formula can be easily determined with a small number of measurement points. [Example] An example of the present invention is shown in FIG. 3, which is a diagram of a drawn pattern to be measured, FIG. 4, which is a sectional view of a resist pattern after exposure and development of the drawn pattern,
This will be explained using a plan view for explaining the electron scattering intensity shown in FIG. As shown in FIG. 3, the drawing pattern to be measured is as follows. For example, the pattern is a rectangular pattern 5 with width W = 1 μm and length H = 1 mm.
This is a single pattern consisting of: The pattern is, for example, a single pattern consisting of a rectangular pattern 6 with a width W'=2 μm and a length H=1 mm. The pattern is a pattern group consisting of a rectangular pattern 7 having the same shape as the rectangular pattern 5, and rectangular patterns 8 and 9 having the same shape placed on both sides thereof with a distance W between them. The pattern consists of a rectangular pattern 10 having the same shape as the rectangular pattern 5, and two rectangular patterns on both sides separated by an interval W.
Same-shaped rectangular patterns 11, 1 arranged one by one
This is a pattern group consisting of 2, 13, and 14. It is a pattern that differs in width from the above patterns and characterizes the influence of scattering effects inside the pattern.A pattern is a group of patterns in which multiple patterns having the same width are arranged at equal intervals, and the patterns are close to each other. It is a pattern that characterizes the influence of an effect. Next, each parameter of the electron scattering intensity distribution equation is determined using a resist pattern formed by exposing a resist layer coated on a substrate using this drawn pattern to be measured. First, a resist to be used in the manufacturing process, for example, a positive resist layer, is applied on the same substrate as that used in the manufacturing process, and the drawing patterns 5, 6, 7, and 10 to be measured are coated with a dose of q. , adjacent patterns 8, 9, 11, 12, 13, and 14 are drawn with a dose Q. Next, this resist layer is developed under the same conditions as in the manufacturing process, and each pattern is cut at right angles to the length direction to expose the cross section of the pattern. FIGS. 1-4 are sectional views of patterns corresponding to FIGS. 3 1-4, respectively. In the figure, a wide single pattern 6 is formed to be wider than a narrow single pattern 5 due to the scattering effect inside the pattern, and patterns with adjacent patterns in a group of patterns having the same width are located close to each other. It can be seen that it is formed widely due to the effect. Next, regarding the pattern cross section exposed in this way, the distances r 1 , r from the center O of each pattern 5, 6, 7, 10 in FIG. 3 to the pattern edges X 1 , X 2 , X 3 , X 4 2 , r 3 and r 4 , and since the points X 3 and X 4 are affected by the proximity effect of adjacent patterns, the distance between these points and the center of the adjacent pattern is r 5 = 2W − r 3 , r 6 = 2W + r 3 , r 7 = 2W-r 4 , r 8 = 4W-r 4 , r 9 = 2W + r 4 , r 10 = 4W + r 4 , are determined by calculation. By the way, when an electron beam spot scans within a rectangular pattern with a width 2a and a length 2b as shown in FIG. 5, a point P located r away from the center O of this rectangular pattern
The electron scattering intensity of is given by the following equation (4) by integrating the above equation (1). F(r)=∫ b −b ∫ a −a f(R)dxdy, (4) where R 2 =(r cosθ−x) 2 +(r sinθ−y) 2 . In equation (4), for the pattern, r=r 1 , 2a=W, 2b=H, θ=O. For the pattern, r=r 2 , 2a=W′, 2b=H, θ=O. For the patterns, r=r 3 for center pattern 7, r=r 5 , r=r 6 for patterns 8 and 9 on both sides, 2a=W, 2b=H, θ=O for all three patterns. For, r=r 4 for central pattern 10, r=r 7 , r=r 8 , r=r 9 , r=r 10 for patterns 11, 12, 13 , and 14 on both sides, and r=r 10 for all 5 patterns. Give 2a=W, 2b=H, θ=O. By these calculations, X 1 , X 2 ,
Find the energy received by each point of X 3 and X 4 . Since these energies are equal to the development level energy E p , the following simultaneous equations (5) are derived.
以上詳細に説明したように本発明によれば、極
めて少ない測定点で、短時間に実際の製造工程に
おける電子散乱強度分布を知ることができる。す
なわち、近接効果補正のための電子散乱強度分布
式を得ることができる。
従つて、高密度の微細パターンを高精度に、か
つ高能率で形成でき、LSIの性能、製造歩留、製
造効率等の向上が期待できる。
As described in detail above, according to the present invention, it is possible to know the electron scattering intensity distribution in the actual manufacturing process in a short time with an extremely small number of measurement points. That is, an electron scattering intensity distribution formula for proximity effect correction can be obtained. Therefore, high-density fine patterns can be formed with high precision and high efficiency, and improvements in LSI performance, manufacturing yield, manufacturing efficiency, etc. can be expected.
第１図１，２はそれぞれ従来例を説明するポジ
レジストパターンとネガレジストパターンの断面
図、第２図は電子散乱強度分布曲線を示す図、第
３図１〜４は本発明を説明する被測定用の描画パ
ターン図、第４図１〜４は第３図に対応するレジ
ストパターン断面図、第５図は電子散乱強度の説
明図である。
図において、１は基板、２はポジレジスト層、
３はネガレジスト層、４は測定点、５〜１４は被
測定用の描画パターン〜を構成する矩形パタ
ーン、ｑ，Ｑは電子ビームの照射量、Ｏは各矩形
パターンの中心、Ｗ，W′は各矩形パターンの
幅、Ｈは各矩形パターンの長さ、X1，X2，X3，
X4はパターンの縁部、r1〜r10はＯからX1〜X4ま
での距離、ｒは描画パターンの中心から描画パタ
ーン外の一点Ｐまでの距離である。
1 and 2 are cross-sectional views of a positive resist pattern and a negative resist pattern, respectively, to explain a conventional example, FIG. 2 is a diagram showing an electron scattering intensity distribution curve, and FIGS. Figures 1 to 4 are cross-sectional views of resist patterns corresponding to Figure 3, and Figure 5 is an explanatory diagram of electron scattering intensity. In the figure, 1 is a substrate, 2 is a positive resist layer,
3 is a negative resist layer, 4 is a measurement point, 5 to 14 are rectangular patterns constituting the drawing pattern to be measured, q and Q are electron beam irradiation doses, O is the center of each rectangular pattern, W and W' is the width of each rectangular pattern, H is the length of each rectangular pattern, X 1 , X 2 , X 3 ,
X 4 is the edge of the pattern, r 1 to r 10 are the distances from O to X 1 to X 4 , and r is the distance from the center of the drawing pattern to a point P outside the drawing pattern.
Claims (1)
と、パターンの両側に単数または複数の隣接パタ
ーンを有する２種類のパターン群とよりなる被測
定用描画パターンを用いてレジストパターンを形
成し、該レジストパターンの寸法を測定し、該寸
法に基づいて電子散乱強度分布を求めることを特
徴とする電子散乱強度分布の測定方法。1. A resist pattern is formed using a drawing pattern to be measured consisting of two types of individual patterns having different dimensions and two types of pattern groups having one or more adjacent patterns on both sides of the pattern, and A method for measuring an electron scattering intensity distribution, comprising measuring dimensions and determining an electron scattering intensity distribution based on the dimensions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10078680A JPS5726436A (en) | 1980-07-23 | 1980-07-23 | Extraction pattern for electron scattering intensity distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10078680A JPS5726436A (en) | 1980-07-23 | 1980-07-23 | Extraction pattern for electron scattering intensity distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5726436A JPS5726436A (en) | 1982-02-12 |
| JPS628015B2 true JPS628015B2 (en) | 1987-02-20 |
Family
ID=14283130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10078680A Granted JPS5726436A (en) | 1980-07-23 | 1980-07-23 | Extraction pattern for electron scattering intensity distribution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726436A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210616A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
| JPS58210617A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
-
1980
- 1980-07-23 JP JP10078680A patent/JPS5726436A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5726436A (en) | 1982-02-12 |
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