JPS628039B2 - - Google Patents
Info
- Publication number
- JPS628039B2 JPS628039B2 JP56195408A JP19540881A JPS628039B2 JP S628039 B2 JPS628039 B2 JP S628039B2 JP 56195408 A JP56195408 A JP 56195408A JP 19540881 A JP19540881 A JP 19540881A JP S628039 B2 JPS628039 B2 JP S628039B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving surface
- paste
- solar cell
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 この発明は太陽電池に関するものである。[Detailed description of the invention] This invention relates to solar cells.
従来のシリコン単結晶太陽電池の構成例を第１
図に示してある。すなわち、この第１図におい
て、１はＰ形シリコン半導体基板、２はこの基板
１の一方の主面上にｎ形不純物を浅く拡散して形
成したｎ形層であつて受光面を形成しており、ま
た３はこの受光面よりマイナス電位を取り出すグ
リツド電極、４は基板１の他方の主面上に設けら
れてプラス電位を取り出す裏面電極、５は受光面
での光反射防止膜である。 The first example of the configuration of a conventional silicon single crystal solar cell is
It is shown in the figure. That is, in FIG. 1, 1 is a P-type silicon semiconductor substrate, and 2 is an n-type layer formed by shallowly diffusing n-type impurities on one main surface of the substrate 1, which forms a light-receiving surface. 3 is a grid electrode for extracting a negative potential from the light receiving surface, 4 is a back electrode provided on the other main surface of the substrate 1 for extracting a positive potential, and 5 is an antireflection film on the light receiving surface.
このように従来構成によるこの種の太陽電池
は、具体的には500μｍ程度の厚さのＰ形単結晶
シリコン基板１の表面に0.3〜0.5μｍ程度のｎ形
拡散領域２を形成して受光面とし、この受光面側
に300μｍ程度の幅のグリツド電極３を４〜５mm
間隔のもとに、例えばエンゲルハード社製Agペ
ーストをスクリーン印刷して形成させ、さらに基
板裏面には全面にAg−Alペーストを同様にスク
リーン印刷して形成させ、また基板は大気中、
600〜620℃で10〜15分程度焼成し、さらに受光面
側にTiO2、Si3N4、Ta2O5などの反射防止膜５を
形成しているのである。 In this way, this kind of solar cell with the conventional structure is constructed by forming an n-type diffusion region 2 of about 0.3 to 0.5 μm on the surface of a P-type single crystal silicon substrate 1 with a thickness of about 500 μm to form a light-receiving surface. Then, a grid electrode 3 with a width of about 300 μm is placed 4 to 5 mm on the light-receiving surface side.
For example, Ag paste manufactured by Engelhard is formed by screen printing at the same intervals, and Ag-Al paste is similarly screen printed on the entire back surface of the substrate, and the substrate is exposed to air.
It is baked at 600 to 620° C. for about 10 to 15 minutes, and an antireflection film 5 made of TiO 2 , Si 3 N 4 , Ta 2 O 5 or the like is further formed on the light-receiving surface side.
こゝでこのような従来の太陽電池にあつて、グ
リツド電極３は大気中で焼成するために、ｎ形層
２とのオーミツク性が悪く、Ｖ−Ｉ特性、光変換
効率が悪いものであつた。 In such a conventional solar cell, since the grid electrode 3 is fired in the atmosphere, the ohmic properties with the n-type layer 2 are poor, and the V-I characteristic and light conversion efficiency are poor. Ta.
この発明は従来のこのような欠点に鑑み、グリ
ツド電極の材料としてAgペーストにNiペースト
を５〜10％程度添加混合したものを用いることに
よりオーミツク性を良好にしてＶ−Ｉ特性および
光変換効率を大幅に改善したものである。 In view of these conventional drawbacks, this invention improves the ohmic properties and improves the V-I characteristics and light conversion efficiency by using a mixture of Ag paste and Ni paste of about 5 to 10% as the material for the grid electrode. This is a significant improvement.
以下、この発明に係わる太陽電池の一実施例に
つき、第２図および第３図を参照して詳細に説明
する。 Hereinafter, one embodiment of the solar cell according to the present invention will be described in detail with reference to FIGS. 2 and 3.
第２図はこの実施例構成を示す断面である。こ
の第２図において前記第１図と同一符号は同一ま
たは相当部分を示しており、この実施例では受光
面側に形成するグリツト電極３ａを、従来のAg
ペースト（例えばエンゲルハード社製Ａ−4162）
に、５〜10％程度のNiペースト（例えばエンゲ
ルハード社製Ａ−4107）を添加混合した材料によ
り形成させて、ｎ形層２とのオーミツク性を良好
にしたものである。 FIG. 2 is a cross section showing the configuration of this embodiment. In this FIG. 2, the same reference numerals as those in FIG. 1 indicate the same or corresponding parts, and in this embodiment, the grit electrode 3a formed on the light receiving surface side is
Paste (e.g. Engelhard A-4162)
It is made of a material in which about 5 to 10% of Ni paste (for example, A-4107 manufactured by Engelhard) is added and mixed to improve the ohmic properties with the n-type layer 2.
また第３図は従来例とこの実施例の太陽電池の
Ｖ−Ｉ特性を示し、受光面にAM１相当の光を当
てた場合である。すなわち、曲線イ，ロは従来例
における暗電流時、光照射時でのＶ−Ｉ特性、曲
線ハ，ニはこの実施例における暗電流時、光照射
時でこのＶ−Ｉ特性である。 Moreover, FIG. 3 shows the VI characteristics of the conventional example and the solar cell of this example, when the light-receiving surface is irradiated with light equivalent to AM1. That is, curves A and B are the VI characteristics in the conventional example during dark current and light irradiation, and curves C and D are the VI characteristics in this embodiment during dark current and light irradiation.
この第３図から明らかなとおり、この実施例の
如くグリツド電極３ａにAgペーストと５〜10％
のNiペーストを混合した材料を用いることで、
順方向バイアスの電圧降下が大幅に小さくなり、
かつ同電極のオーミツク性が大幅に改善されて、
光照射時のＶ−Ｉ特性が良好となり、光変換効率
を飛躍的に向上し得るのである。こゝでこの実施
例での電極材料を使用したのちの焼成条件は、
610℃、10分程度で充分であり、これによつて前
記のようにオーミツク性、光変換効率の向上を図
り得たものである。 As is clear from FIG. 3, as in this embodiment, the grid electrode 3a is coated with 5 to 10% Ag paste.
By using a material mixed with Ni paste,
The forward bias voltage drop is significantly smaller,
In addition, the ohmic properties of the electrode have been greatly improved,
The V-I characteristic during light irradiation becomes better, and the light conversion efficiency can be dramatically improved. Here, the firing conditions after using the electrode material in this example are as follows:
A temperature of 610° C. for about 10 minutes is sufficient, and as a result, the ohmic properties and light conversion efficiency can be improved as described above.
なお、前記実施例はシリコン単結晶太陽電池に
ついて述べたが、他の太陽電池であつても同様の
効果を得られる。 Although the above embodiments have been described with respect to silicon single crystal solar cells, similar effects can be obtained with other solar cells.
以上詳述したようにこの発明によれば、シリコ
ン半導体基板上にこれとは異なる導電層を薄く拡
散して形成した受光面のグリツド電極として、
Niを含むAgペースト材料を用いたので、そのオ
ーミツク性を改善でき、光変換効率を向上し得る
と共に、併せて製造歩留りの向上、ならびに原価
低源に役立つなどの特長がある。 As detailed above, according to the present invention, as a grid electrode on a light receiving surface formed by thinly diffusing a different conductive layer on a silicon semiconductor substrate,
Since the Ag paste material containing Ni is used, its ohmic properties can be improved, and the light conversion efficiency can be improved. At the same time, it has the advantage of improving the manufacturing yield and helping to lower the cost.
第１図は従来例による太陽電池の概要構成を示
す断面図、第２図はこの発明の一実施例による太
陽電池の概要構成を示す断面図、第３図は従来例
とこの実施例での太陽電池の光照射時のＶ−Ｉ特
性を示す説明図である。
１……Ｐ形単結晶シリコン基板、２……ｎ形
層、３，３ａ……グリツド電極、４……裏面電
極、５……光反射防止膜。
FIG. 1 is a cross-sectional view showing the general structure of a solar cell according to a conventional example, FIG. 2 is a cross-sectional view showing a general structure of a solar cell according to an embodiment of the present invention, and FIG. FIG. 2 is an explanatory diagram showing the VI characteristics of a solar cell when irradiated with light. DESCRIPTION OF SYMBOLS 1... P-type single crystal silicon substrate, 2... N-type layer, 3, 3a... Grid electrode, 4... Back electrode, 5... Anti-reflection film.
Claims (1)
拡散形成して、受光面の近くにPn接合を形成し
た太陽電池において、少なくとも受光面側の電極
にNiを含むAgペースト材料を用いたことを特徴
とする太陽電池。1. In a solar cell in which a different conductive layer is thinly diffused on a semiconductor substrate and a Pn junction is formed near the light-receiving surface, an Ag paste material containing Ni is used at least for the electrode on the light-receiving surface side. Features solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56195408A JPS5896777A (en) | 1981-12-03 | 1981-12-03 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56195408A JPS5896777A (en) | 1981-12-03 | 1981-12-03 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5896777A JPS5896777A (en) | 1983-06-08 |
| JPS628039B2 true JPS628039B2 (en) | 1987-02-20 |
Family
ID=16340601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56195408A Granted JPS5896777A (en) | 1981-12-03 | 1981-12-03 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5896777A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3254044B2 (en) * | 1993-06-16 | 2002-02-04 | ナミックス株式会社 | Electrodes for solar cells |
| JP2002373995A (en) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | Solar cell manufacturing method |
| JP2015523707A (en) * | 2012-04-18 | 2015-08-13 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | Printing method for solar cell contacts |
| KR101614186B1 (en) | 2013-05-20 | 2016-04-20 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018152B2 (en) * | 1976-04-23 | 1985-05-09 | 工業技術院長 | Method for manufacturing solar cell device |
| JPS5333752A (en) * | 1976-09-09 | 1978-03-29 | Matsushita Electric Works Ltd | Electric toothbrush |
-
1981
- 1981-12-03 JP JP56195408A patent/JPS5896777A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5896777A (en) | 1983-06-08 |
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