Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS628510B2 - - Google Patents
[go: Go Back, main page]

JPS628510B2 - - Google Patents

Info

Publication number
JPS628510B2
JPS628510B2 JP54062069A JP6206979A JPS628510B2 JP S628510 B2 JPS628510 B2 JP S628510B2 JP 54062069 A JP54062069 A JP 54062069A JP 6206979 A JP6206979 A JP 6206979A JP S628510 B2 JPS628510 B2 JP S628510B2
Authority
JP
Japan
Prior art keywords
room
evaporation source
front door
clean room
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54062069A
Other languages
Japanese (ja)
Other versions
JPS55154571A (en
Inventor
Sueo Tsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6206979A priority Critical patent/JPS55154571A/en
Publication of JPS55154571A publication Critical patent/JPS55154571A/en
Publication of JPS628510B2 publication Critical patent/JPS628510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【発明の詳細な説明】 本発明は清浄な雰囲気中で半導体ウエハースの
大量処理を可能ならしめた真空蒸着装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum evaporation apparatus that enables mass processing of semiconductor wafers in a clean atmosphere.

集積回路の配線形成のために蒸着工程で用いる
従来の真空蒸着装置を第1図及び第2図に示す。
第1のタイプ(ベルジヤータイプ)は、第1図に
示すようにベルジヤー1′の内部に、ウエハース
ホルダー2′及び電子銃3′が設置され、ゲートバ
ルブ4′を介してベルジヤー1′の下方に液体チツ
ソトラツプ5′及び水冷バルブ6′ならびに拡散ポ
ンプ7′などが設置され、拡散ポンプ7′にフオア
バルブ8′を介して油回転ポンプ9′が接続されて
いるものである。なお、図中10′はベルジヤー
1′の昇降機、11はフイードスルーポートを示
す。また、第2のタイプ(ハツチタイプ)は、第
2図に示すように、ウエハースホルダー2′を内
装したハツチ12′と電子銃3′とが隔離バルブ1
3′によつて隔離されているものである。なお、
第2図中第1図と同一構成部分には同一番号符を
付してその説明を省略する。
A conventional vacuum evaporation apparatus used in a evaporation process for forming wiring of an integrated circuit is shown in FIGS. 1 and 2.
The first type (belgear type) has a wafer holder 2' and an electron gun 3' installed inside the bell gear 1' as shown in FIG. A liquid nitrogen trap 5', a water cooling valve 6', a diffusion pump 7', etc. are installed in the tank, and an oil rotary pump 9' is connected to the diffusion pump 7' via a fore valve 8'. In the figure, 10' indicates an elevator of the bell gear 1', and 11 indicates a feed through port. In the second type (hatch type), as shown in FIG. 2, a hatch 12' with a wafer holder 2' inside and an electron gun 3'
3'. In addition,
Components in FIG. 2 that are the same as those in FIG. 1 are designated by the same numbers and their explanations will be omitted.

以上、いずれのタイプの場合にも資料となる半
導体ウエハースをベルジヤー1′またはハツチ1
2′を開いてウエハースホルダー2′にこれをセツ
トし、蒸着が終了した後、再びベルジヤー1′ま
たはハツチ12を開いて資料を外部に取出すもの
である。この資料の汚染を防止をするため、いず
れのタイプのものも装置全体がクリーンルーム内
に設置されているのであるが、清掃が必要で、し
かも非常に高い清浄度を要求されるにもかかわら
ず、油回転ポンプや油拡散ポンプなどが用いられ
た装置本体をクリーンルームに設置すること自体
問題であり、集積回路の集積度が要求される昨今
では、従来タイプの蒸着装置では不十分であると
考えられている。
In the case of any of the above types, the semiconductor wafer that serves as the material is either bergier 1' or hatch 1.
2' is opened and the wafer holder 2' is set therein, and after the vapor deposition is completed, the bell jar 1' or hatch 12 is opened again to take out the material. In order to prevent contamination of this material, the entire equipment for both types is installed in a clean room, but even though cleaning is required and extremely high cleanliness is required, Installing equipment that uses oil rotary pumps, oil diffusion pumps, etc. in a clean room is itself a problem, and in these days when integrated circuits are required to be highly integrated, conventional vapor deposition equipment is considered insufficient. ing.

次にウエハースの大型化による1バツチ当りの
処理枚数の低下が問題となつてきている。処理枚
数を上げるめには、第1のタイプが適している
が、このタイプでは蒸発源、すなわち電子銃3′
が毎回大気にさらされるという欠点があり、蒸発
物のコンタミネーシヨンが問題となる。
Next, a decrease in the number of wafers processed per batch due to the increase in size of wafers has become a problem. The first type is suitable for increasing the number of sheets processed, but in this type, the evaporation source, that is, the electron gun 3'
It has the disadvantage that it is exposed to the atmosphere every time, and contamination of evaporated matter becomes a problem.

これに対して、第2のタイプでは電子銃3′が
収容された蒸発源室と、資料室となるハツチ1
2′とが隔離バルブ13′で仕切られており、いわ
ゆるロードロツク方式となつているために、電子
銃3′は常に真空中に保管され、第1のタイプに
みられるような問題点はないが、1バツチあたり
の処理枚数の点で第1タイプに劣るという欠点が
ある。
On the other hand, the second type has an evaporation source chamber that houses the electron gun 3' and a hatch 1 that serves as a data room.
Since the electron gun 3' is separated from the electron gun 2' by an isolation valve 13', and it is a so-called load-lock system, the electron gun 3' is always stored in a vacuum, and there is no problem as seen in the first type. , has the disadvantage that it is inferior to the first type in terms of the number of sheets processed per batch.

本発明は上記従来の蒸着装置にみられる欠点を
解消するもので、資料室と蒸発源室とが隔離バル
ブによつて仕切られたロードロツク式真空蒸着装
置において装置本体を壁によつてクリーンルーム
から隔離されたメンテナンスルーム内に設置し、
該装置本体に設けられた資料の出し入れ用の表扉
を前記壁に開口した窓孔を通してクリーンルーム
室内に臨ませ、前記資料室内に設置する資料ホル
ダをスライドガイドに支持させて、クリーンルー
ム側に出入可能とし、前記質料室の後面に表扉と
連動して自動的に開閉するラミナーフロー用裏扉
を設け、前記資料室の下方に設置された蒸発源室
を上下動ならびに資料室の下方から外部へ取出し
可能に設置されたベースプレート上に設置したこ
とを特徴とする真空蒸着装置である。
The present invention solves the above-mentioned drawbacks of conventional evaporation equipment.The present invention is a load-lock type vacuum evaporation equipment in which a data room and an evaporation source chamber are separated by an isolation valve, and the main body of the equipment is isolated from a clean room by a wall. installed in the maintenance room where
A front door for loading and unloading materials provided on the main body of the device is made to look into the clean room through a window hole opened in the wall, and a document holder installed in the material room is supported by a slide guide, allowing access to the clean room side. A back door for laminar flow that automatically opens and closes in conjunction with the front door is installed at the rear of the material room, and the evaporation source chamber installed below the material room can be moved up and down and from the bottom of the material room to the outside. This vacuum evaporation apparatus is characterized in that it is installed on a base plate that is installed to be removable.

以下本発明の実施例を図面によつて説明する。
第3図イ,ロ,ハにおいて、メンテナスルーム1
とクリーンルーム2とが壁3によつて隔離されて
おり、メンテナンスルーム1内に装置本体が設置
されている。装置本体はゲートバルブ5、クライ
オポンプ6、資料室7及び、該資料室7の下方に
設置された蒸発源室8とからなり、資料室7と蒸
発源室8とは隔離バルブ9で仕切られている。蒸
発源室8内には電子銃10が設置され、該電子銃
10はベースプレート昇降スクリユー11によつ
て上下動可能に保持されたベースプレート12の
上面に保持されている。
Embodiments of the present invention will be described below with reference to the drawings.
In Figure 3 A, B, and C, maintainer room 1
and a clean room 2 are separated by a wall 3, and the main body of the apparatus is installed inside the maintenance room 1. The main body of the apparatus consists of a gate valve 5, a cryopump 6, a material room 7, and an evaporation source chamber 8 installed below the material room 7. The material room 7 and the evaporation source room 8 are separated by an isolation valve 9. ing. An electron gun 10 is installed in the evaporation source chamber 8, and the electron gun 10 is held on the upper surface of a base plate 12 which is held movably up and down by a base plate elevating screw 11.

資料室7は大型の角型ボツクスで、裏面にラミ
ナーフロー用裏扉13が設けられ、正面側に該資
料室7の前面を開閉する表扉14が開閉自在に取
付けられ、該表扉14は壁3に開口した窓孔内に
臨ませてある。なお、窓孔の開口部と資料室の正
面との間はシールされて、気密に保たれている。
資料室7の上部にはプラネタリー型ウエハースホ
ルダ15がその両側に設けられたスライドガイド
18にそつて摺動可能に設置され、さらに資料室
7内には基板加熱用ランプ17が設けられてい
る。なお、図中16は、表扉14に設けたビユー
イングポートを示す。
The material room 7 is a large rectangular box, with a back door 13 for laminar flow installed on the back side, and a front door 14 for opening and closing the front of the material room 7 attached to the front side so as to be openable and closable. It faces into a window hole opened in wall 3. The space between the opening of the window and the front of the material room is sealed to maintain airtightness.
A planetary type wafer holder 15 is installed in the upper part of the material room 7 so as to be able to slide along slide guides 18 provided on both sides thereof, and a substrate heating lamp 17 is further provided in the material room 7. . Note that 16 in the figure indicates a viewing port provided on the front door 14.

なお、本実施例では換気スピード及び油の汚染
をさけるため、クライオポンプ6を用いたもので
ある。前記ラミナーフロー用裏扉13は表扉14
と連動して自動的に開閉するもので、表扉14を
開いたときに資料室7が密閉されていると、クリ
ーンルーム側のラミナーフローが蒸発源室8内に
流れ込んで渦をひき起し、資料室7内のゴミを巻
き上げるのを防止するものである。
In this embodiment, a cryopump 6 is used in order to speed up ventilation and avoid oil contamination. The back door 13 for laminar flow is the front door 14
If the material room 7 is sealed when the front door 14 is opened, the laminar flow from the clean room side will flow into the evaporation source chamber 8 and cause a vortex. This is to prevent dust in the material room 7 from being stirred up.

本発明では表扉14を開いてプラネタリー型ウ
エハースホルダ15を資料室7内より引き出し、
該ホルダ15に半導体基板を保持させて資料室7
内に戻し、表扉14を閉鎖して通常の如く蒸着処
理を行なうものであるが、ここに装置本体が壁3
で、クリーンルーム2から隔離されたメンテナン
スルーム1内に設置され、資料室7内の操作は壁
3にあけられた窓孔を通して表扉14開閉によつ
てのみ行なうために、従来のようなクリーンルー
ムの汚染の問題は完全に解消され、また、資料室
7と蒸発源室8とを隔離バルブ9によつて分けら
れたロードロツク方式を採ることにより、蒸発物
のコンタミネーシヨンの問題がなくなり、しかも
資料室7として大型のボツクスを用いたため、一
度に大量の基板を処理することができる。また資
料室7内への半導体基板の出し入れはスライドガ
イド18にそつてウエハースホルダ15をクリー
ンルーム側引出すことによつて行なうために、ロ
ーデイングアンローデイングの作業をきわめて容
易に行なうことができる。さらに本発明によれ
ば、蒸発源室8内及びその周囲の清掃を行なう場
合に、この蒸発源室8を下降させ、そのまま後方
に引出すことによつて容易に行なうことができ
る。
In the present invention, the front door 14 is opened and the planetary type wafer holder 15 is pulled out from inside the data room 7.
The holder 15 holds the semiconductor substrate and the material room 7
The device is returned to the interior, the front door 14 is closed, and the vapor deposition process is performed as usual.
It is installed in the maintenance room 1 isolated from the clean room 2, and operations in the data room 7 are performed only by opening and closing the front door 14 through a window hole in the wall 3, so it is different from the conventional clean room. The problem of contamination has been completely eliminated, and by adopting a load-lock system in which the material room 7 and the evaporation source chamber 8 are separated by an isolation valve 9, the problem of contamination of evaporated matter has been eliminated. Since a large box is used as the chamber 7, a large amount of substrates can be processed at one time. Furthermore, since the semiconductor substrates are loaded into and taken out of the material room 7 by pulling out the wafer holder 15 toward the clean room along the slide guide 18, loading and unloading operations can be performed extremely easily. Further, according to the present invention, when cleaning the inside of the evaporation source chamber 8 and its surroundings, the cleaning can be easily done by lowering the evaporation source chamber 8 and pulling it out rearward.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は従来の真空蒸着装置の例を示
す正面図、第3図イ,ロ,ハは本発明装置の一実
施例を示すもので、イは平面図、ロは側面図、ハ
は正面図である。 1……メンテナンスルーム、2……クリーンル
ーム、3……壁、7……資料室、8……蒸発源
室、9……隔離バルブ、10……電子銃、13…
…ラミナーフロー用裏扉、14……表扉、15…
…ウエハースホルダ、18……スライドガイド。
Figures 1 and 2 are front views showing an example of a conventional vacuum evaporation apparatus, and Figures 3A, 2B, and 2C are views of an embodiment of the apparatus of the present invention, where A is a plan view and B is a side view. , C is a front view. 1... Maintenance room, 2... Clean room, 3... Wall, 7... Data room, 8... Evaporation source room, 9... Isolation valve, 10... Electron gun, 13...
...Back door for laminar flow, 14...Front door, 15...
...Wafer holder, 18...Slide guide.

Claims (1)

【特許請求の範囲】[Claims] 1 資料室と蒸発源室とが隔離バルブによつて仕
切られたロードロツク式真空蒸着装置において、
装置本体を壁によつてクリーンルームから隔離さ
れたメンテナンスルーム内に設置し、該装置本体
に設けられた資料の出し入れ用の表扉を前記壁に
開口した窓孔を通してクリーンルーム室内に臨ま
せ、前記資料室内に設置する資料ホルダをスライ
ドガイドに支持させて、クリーンルーム側に出入
可能とし、前記資料室の後面に表扉と連動して自
動的に開閉するラミナーフロー用裏扉を設け、前
記資料室の下方に設置された蒸発源室を上下動な
らびに資料室の下方から外部へ取出し可能に設置
されたベースプレート上に設置したことを特徴と
する真空蒸着装置。
1 In a load-lock type vacuum evaporation device in which the data room and the evaporation source room are separated by an isolation valve,
The main body of the device is installed in a maintenance room separated from the clean room by a wall, and the front door provided in the main body of the device for loading and unloading materials is exposed into the clean room through a window hole opened in the wall. Material holders installed in the room are supported by slide guides to allow access to the clean room side, and a back door for laminar flow that automatically opens and closes in conjunction with the front door is provided at the rear of the material room. A vacuum evaporation device characterized in that an evaporation source chamber installed below is installed on a base plate installed so that it can be moved up and down and taken out from the bottom of the material room to the outside.
JP6206979A 1979-05-19 1979-05-19 Vacuum vapor deposition apparatus Granted JPS55154571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6206979A JPS55154571A (en) 1979-05-19 1979-05-19 Vacuum vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6206979A JPS55154571A (en) 1979-05-19 1979-05-19 Vacuum vapor deposition apparatus

Publications (2)

Publication Number Publication Date
JPS55154571A JPS55154571A (en) 1980-12-02
JPS628510B2 true JPS628510B2 (en) 1987-02-23

Family

ID=13189428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6206979A Granted JPS55154571A (en) 1979-05-19 1979-05-19 Vacuum vapor deposition apparatus

Country Status (1)

Country Link
JP (1) JPS55154571A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161262U (en) * 1989-03-23 1989-11-09

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421564U (en) * 1977-07-14 1979-02-13

Also Published As

Publication number Publication date
JPS55154571A (en) 1980-12-02

Similar Documents

Publication Publication Date Title
CN100343950C (en) Lining heating device and multi-chamber lining treatment system
US5772386A (en) Loading and unloading station for semiconductor processing installations
KR100932961B1 (en) Manufacturing Method of Substrate Processing Apparatus and Semiconductor Device
US11404297B2 (en) Systems, apparatus, and methods for an improved load port
JPH1163604A (en) Processing apparatus and method for controlling gas in processing apparatus
JP2003007800A (en) Substrate processing apparatus and method of manufacturing semiconductor device
JPH04504929A (en) Method for depositing layers on a substrate and processing system for this purpose
JP2014239096A (en) Load port unit and efem system
US11527426B2 (en) Substrate processing device
JP2005026513A (en) Processing apparatus
JP2009266962A (en) Substrate processing apparatus and method for manufacturing semiconductor device
JP3543995B2 (en) Processing equipment
US20170025308A1 (en) Method of cleaning bottom of via hole and method of manufacturing semiconductor device
JPS628510B2 (en)
TW202008493A (en) Substrate processing device and manufacturing method of semiconductor device, and recording medium
JPH0215632B2 (en)
JP5279576B2 (en) Substrate processing equipment
JPH042147A (en) Preserver of semiconductor substrate
JP2005347667A (en) Semiconductor manufacturing equipment
JP3395180B2 (en) Substrate processing equipment
JP2002246436A (en) Substrate processing equipment
JPS5994435A (en) Vacuum treating device
JP3787755B2 (en) Processing system
JPH09143674A (en) Film forming apparatus and method of using the same
JPH02282474A (en) Sputtering film deposition equipment