JPS6311605B2 - - Google Patents
Info
- Publication number
- JPS6311605B2 JPS6311605B2 JP56174233A JP17423381A JPS6311605B2 JP S6311605 B2 JPS6311605 B2 JP S6311605B2 JP 56174233 A JP56174233 A JP 56174233A JP 17423381 A JP17423381 A JP 17423381A JP S6311605 B2 JPS6311605 B2 JP S6311605B2
- Authority
- JP
- Japan
- Prior art keywords
- reflective
- reflective film
- base material
- scale
- detection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
- G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Optical Transform (AREA)
- Electroplating Methods And Accessories (AREA)
Description
【発明の詳細な説明】
本発明は光電式変位検出装置の反射型スケール
の製造方法に係り、特に、２個の相対的に移動す
る物体の相対的移動量或いは相対的位置関係を検
出するための光電式変位検出装置のメインスケー
ルとして用いるに好適な、入射光を反射するため
の光反射部と、入射光を吸収又は反射防止するた
めの非反射部とが交互に形成されてなる光電式変
位検出装置の反射型スケールの製造方法の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a reflective scale for a photoelectric displacement detection device, particularly for detecting the relative movement amount or relative positional relationship of two relatively moving objects. This photoelectric type is suitable for use as the main scale of a photoelectric displacement detection device in which a light reflecting part for reflecting incident light and a non-reflecting part for absorbing or preventing reflection of incident light are formed alternately. This invention relates to an improvement in a method for manufacturing a reflective scale for a displacement detection device.
一般に、物体の長さ等を測定する変位測定機に
おいて、その本体に対する測定子の移動量、コラ
ムに対するスライダーの移動量等のように、相対
移動するものの移動量を測定する場合、一方にメ
インスケール、他方にインデツクススケールを含
む検出器を固定し、メインスケールと検出器の相
対変位量を光電的に読取る光電式変位測定機が知
られている。 Generally, in a displacement measuring machine that measures the length of an object, when measuring the amount of movement of something that moves relatively, such as the amount of movement of the probe with respect to the main body, the amount of movement of a slider with respect to the column, etc., the main scale is placed on one side. A photoelectric displacement measuring device is known in which a detector including an index scale is fixed on the other side and the relative displacement between the main scale and the detector is read photoelectrically.
この光電式変位測定機においては、通常、透過
型或いは反射型の光電式変位検出装置が用いられ
ており、このうち反射型の光電式変位検出装置
は、第１図に示す如く、ランプ等の発光源１０
と、該発光源１０から照射された光線を平行光線
とするためのコリメータレンズ１２と、例えばガ
ラス製の基板上に光の透過部１４ａと遮断部１４
ｂが交互に形成されてなるインデツクススケール
１４と、基板上に光の透過部１６ａと反射部１６
ｂが交互に形成されてなるメインスケール１６
と、メインスケール１６によつて反射されインデ
ツクススケール１４を再び透過した光を集光する
集光レンズ１８と、該集光レンズ１８によつて集
められた光を受光する受光素子２０とを有してな
る。前記発光源１０、コリメータレンズ１２、イ
ンデツクススケール１４、集光レンズ１８、受光
素子２０は、例えば略密閉構造のケースに固定さ
れ、一方、メインスケール１６は、その先端が測
定対象に当接され、測定対象の変位と共に往復動
するスピンドル等と連動して往復動するようにさ
れている。 In this photoelectric displacement measuring device, a transmission type or reflection type photoelectric displacement detection device is usually used. Among these, the reflection type photoelectric displacement detection device uses a lamp or the like as shown in Fig. 1. Light source 10
, a collimator lens 12 for collimating the light rays emitted from the light emitting source 10, and a light transmitting part 14a and a light blocking part 14 on a substrate made of glass, for example.
an index scale 14 formed by alternating numbers b, and a light transmitting part 16a and a light reflecting part 16 on the substrate.
The main scale 16 is formed by alternating numbers b.
, a condenser lens 18 that condenses the light reflected by the main scale 16 and transmitted through the index scale 14 again, and a light receiving element 20 that receives the light condensed by the condenser lens 18. It will be done. The light emitting source 10, collimator lens 12, index scale 14, condensing lens 18, and light receiving element 20 are fixed, for example, to a case with a substantially sealed structure, while the tip of the main scale 16 is in contact with the object to be measured. , is adapted to reciprocate in conjunction with a spindle, etc., which reciprocates with the displacement of the object to be measured.
このような光電式変位検出装置を備えた光電式
変位測定機によれば、測定対象の変位に応じてメ
インスケール１６が第１図の矢印Ａ方向に変位す
ると、受光素子２０における受光量が周期的に変
化するため、この受光量の変化からメインスケー
ル１６とケースの相対移動量を検出できるもので
あり、測定対象の変位をデジタル的に測定できる
という特徴を有する。しかし従来は、前記メイン
スケール１６を、例えばガラス基板上に光反射性
に富んだ材料からなる反射膜を形成し、その後、
該反射膜上にエツチングレジストを縞状に塗付
し、次いで、エツチングにより前記光反射膜のエ
ツチングレジストが塗付されていない部分を除去
し、更に反射膜上に残存するエツチングレジスト
を最終的に剥離して反射部と非反射部とすること
により製造するようにしていたため、光反射性を
向上させるためには比較的厚い反射膜を形成する
必要があり、結果としてエツチング時におけるサ
イドエツチングが大きくなり、光反射部の寸法精
度が低下して、近年精密測定に対して要求されつ
つある10μｍ以下の幅の狭い縞を形成することは
困難であるという問題点を有した。 According to a photoelectric displacement measuring machine equipped with such a photoelectric displacement detection device, when the main scale 16 is displaced in the direction of arrow A in FIG. The amount of relative movement between the main scale 16 and the case can be detected from the change in the amount of received light, and the displacement of the object to be measured can be measured digitally. However, conventionally, the main scale 16 is formed by forming a reflective film made of a highly reflective material on a glass substrate, for example, and then
Etching resist is applied in a striped manner onto the reflective film, and then the portions of the light reflective film to which the etching resist is not applied are removed by etching, and the etching resist remaining on the reflective film is finally etched. Because it was manufactured by peeling off the film to create reflective and non-reflective parts, it was necessary to form a relatively thick reflective film in order to improve the light reflectivity, and as a result, side etching was large during etching. Therefore, the dimensional accuracy of the light reflecting portion deteriorates, and there is a problem that it is difficult to form narrow stripes of 10 μm or less in width, which has been required for precision measurement in recent years.
そこで出願人は、既に、反射型メインスケール
における前記欠点を解消するべく、基材表面の全
面に渡つて光反射性に富んだ材料の薄膜を形成
し、次いで、これに重ねて光反射性に劣る材料の
薄膜を形成し、更に、エツチングによつて前記非
反射薄膜を縞状に剥離して、縞を形成する方法を
提案している。この方法によれば、サイドエツチ
ングが小さくなり、数μｍ幅の縞を形成すること
が可能となるが、光反射性に富んだ材料からなる
反射膜を基材の全面に渡つて形成する必要がある
ため、例えば、該反射膜を金により形成する場合
には、極めて不経済であるという問題点を有して
いた。又、この方法においては、反射膜上に形成
された非反射膜をエツチングにより剥離する際
に、エツチング時間の選定を誤まると反射膜も腐
食してしまい、反射膜の反射率が低下する恐れも
あつた。 Therefore, in order to eliminate the above-mentioned drawbacks of the reflective main scale, the applicant has already formed a thin film of a material with high light reflectivity over the entire surface of the base material, and then overlaid it with a thin film of a material with high light reflectivity. A method has been proposed in which a thin film of an inferior material is formed, and then the non-reflective thin film is peeled off in stripes by etching to form stripes. This method reduces side etching and makes it possible to form stripes with a width of several micrometers, but it is necessary to form a reflective film made of a highly reflective material over the entire surface of the substrate. Therefore, for example, when the reflective film is formed of gold, it is extremely uneconomical. Additionally, in this method, when etching off the non-reflective film formed on the reflective film, if the etching time is incorrectly selected, the reflective film may also be corroded, leading to a decrease in the reflectance of the reflective film. It was hot too.
更に、いずれの方法においても、工程が複雑で
あるだけでなく、反射膜と非反射膜が基板の異な
る面上に形成されることとなるため、サイドエツ
チングを極小とすることはできず、精度の高い縞
を形成することは困難であつた。 Furthermore, in either method, not only is the process complicated, but the reflective film and non-reflective film are formed on different sides of the substrate, so side etching cannot be minimized and precision It was difficult to form high stripes.
本発明は、前記従来の欠点を解消するべくなさ
れたもので、サイドエツチングが極めて少なく、
精度の高い微小縞を単純な工程により形成するこ
とができる光電式変位検出装置の反射型スケール
の製造方法を提供することを目的とする。 The present invention was made to solve the above-mentioned conventional drawbacks, and has extremely little side etching.
It is an object of the present invention to provide a method for manufacturing a reflective scale for a photoelectric displacement detection device, which allows highly accurate microfringes to be formed through a simple process.
本発明は、入射光を反射するための反射部と、
入射光を吸収又は反射防止するための非反射部と
が交互に形成されてなる光電式変位検出装置の反
射型スケールの製造方法において、略矩形の基材
の平坦な表面上に、非反射部として作用し、且
つ、非鍍金性を有する非反射膜を形成した後、エ
ツチングにより縞状に配設する第１工程と、該第
１工程で配設された縞状の非反射膜をメツキレジ
ストとして、基材露出面に反射部として作用する
反射膜を選択的にメツキする第２工程とを用いて
製造するようにして、前記目的を達成したもので
ある。 The present invention includes a reflecting section for reflecting incident light;
In a method for manufacturing a reflective scale for a photoelectric displacement detection device, in which non-reflective parts for absorbing or preventing incident light are formed alternately, the non-reflective parts are formed on a flat surface of a substantially rectangular base material. After forming a non-reflective film that acts as a non-plating property, the first step is to form a striped film by etching, and the striped non-reflective film provided in the first step is plated with a plating resist. The above-mentioned object has been achieved by manufacturing the device using a second step of selectively plating a reflective film that acts as a reflective portion on the exposed surface of the base material.
又、前記基材を導電体とし、酸化クロムからな
る前記非反射膜及び金からなる前記反射膜を、該
導電体基材の表面上に直接形成するようにしたも
のである。 Further, the base material is a conductor, and the non-reflective film made of chromium oxide and the reflective film made of gold are formed directly on the surface of the conductive base material.
或いは、前記基材を非導電体とし、酸化クロム
からなる前記非反射膜及び金からなる前記反射膜
を、前記非導電体基材上に形成されたニツケル膜
上に形成するようにしたものである。 Alternatively, the base material is a non-conductor, and the non-reflective film made of chromium oxide and the reflective film made of gold are formed on a nickel film formed on the non-conductor base material. be.
以下図面を参照して、本発明の実施例を詳細に
説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
まず、基材が、ステンレス等の導電体であり、
該導電体基材の表面に酸化クロムからなる非反射
膜と金からなる反射膜が形成されてなる光電式変
位検出装置の反射型スケールの製造方法の第１実
施例について説明する。この第１実施例において
は、まず、第２図Ａに示す如く、ステンレス等の
導電体基材３０表面の全面に渡つて、非反射部と
して作用し、且つ、非鍍金性を有する酸化クロム
からなる非反射膜３２を形成し、次いで、エツチ
ングによりこの非反射膜３２の一部を剥離して縞
状の非反射膜を導電体基材３０の表面上に残す。
次いで、第２図Ｂに示す如く、前記工程で配設さ
れた縞状の非反射膜３２をメツキレジストとし
て、基材３０の露出面に、反射部として作用する
金からなる反射膜３４を選択的にメツキする。 First, the base material is a conductor such as stainless steel,
A first embodiment of a method for manufacturing a reflective scale for a photoelectric displacement detection device in which a non-reflective film made of chromium oxide and a reflective film made of gold are formed on the surface of the conductor base material will be described. In this first embodiment, first, as shown in FIG. 2A, the entire surface of the conductor base material 30, such as stainless steel, is made of chromium oxide, which acts as a non-reflective part and has non-plating properties. Then, a part of the non-reflective film 32 is peeled off by etching to leave a striped non-reflective film on the surface of the conductor base material 30.
Next, as shown in FIG. 2B, the striped non-reflective film 32 provided in the above step is used as a plating resist, and a reflective film 34 made of gold that acts as a reflective part is selected on the exposed surface of the base material 30. to make a point.
本実施例においては、基材３０が導電体とされ
ているため、該基材３０の表面上に非反射膜３２
及び反射膜３４を直接形成することができ、製造
工程が極めて単純である。 In this embodiment, since the base material 30 is a conductor, a non-reflective film 32 is formed on the surface of the base material 30.
And the reflective film 34 can be directly formed, and the manufacturing process is extremely simple.
次に、基材が、ガラス或いはプラスチツク等の
非導電体であり、酸化クロムからなる非反射膜及
び金からなる反射膜が、該非導電体基材上に形成
されたニツケル膜上に形成されてなる光電式変位
検出装置の反射型スケールの製造方法の第２実施
例について説明する。 Next, the base material is a non-conductive material such as glass or plastic, and a non-reflective film made of chromium oxide and a reflective film made of gold are formed on the nickel film formed on the non-conductive material. A second embodiment of the method for manufacturing a reflective scale for a photoelectric displacement detection device will be described.
この第２実施例においては、まず、第３図Ａに
示す如く、ガラス或いはプラスチツクからなる非
導電体基材３６表面の全面に渡つて、無電解によ
りニツケル膜３８を形成する。次いで該ニツケル
膜３８表面の全面に渡つて、前記第１実施例と同
様にしてクロムからなる非反射膜３２を形成し、
更に該非反射膜３２の一部をエツチングにより除
去して、縞状の非反射膜をニツケル膜３８の表面
上に残す。更に、第３図Ｂに示す如く、ニツケル
膜３８上の非反射膜３２が除去された部分に、金
からなる反射膜３４を選択的にメツキする。 In this second embodiment, first, as shown in FIG. 3A, a nickel film 38 is electrolessly formed over the entire surface of a non-conductive substrate 36 made of glass or plastic. Next, a non-reflective film 32 made of chromium was formed over the entire surface of the nickel film 38 in the same manner as in the first embodiment.
Further, a portion of the non-reflective film 32 is removed by etching, leaving a striped non-reflective film on the surface of the nickel film 38. Furthermore, as shown in FIG. 3B, a reflective film 34 made of gold is selectively plated on the portion of the nickel film 38 from which the non-reflective film 32 has been removed.
本実施例においては、光吸収性に優れた非導電
体基材を基材として用いることができるので、特
性が改善され、且つ、非反射膜の厚さを波長の1/
４程度の薄さに形成することができる。 In this example, since a non-conductive base material with excellent light absorption can be used as the base material, the characteristics are improved and the thickness of the non-reflective film can be reduced to 1/1 of the wavelength.
It can be formed to a thickness of about 4 mm.
尚、前記実施例においては、いずれも、基材が
ステンレス、ガラス、或いはプラスチツクとさ
れ、非反射膜が酸化クロムとされ、反射膜が金と
されていたが、基材、非反射膜、及び反射膜の材
質はこれに限定されない。例えば、非反射膜を、
酸化ニツケル、酸化チタン、或いは、酸化マグネ
シウムとし、反射膜を、銀、アルミニウム、或い
は、ロジウムとすることも可能である。又、非反
射膜を金属以外の物質とし、印刷或いは写真発色
の方法等により、基材上に縞状に形成して、非反
射膜の一部をエツチングにより除去する工程を省
略することも可能である。 In each of the above examples, the base material was stainless steel, glass, or plastic, the non-reflective film was chromium oxide, and the reflective film was gold, but the base material, the non-reflective film, and The material of the reflective film is not limited to this. For example, a non-reflective film,
It is also possible to use nickel oxide, titanium oxide, or magnesium oxide, and to use silver, aluminum, or rhodium as the reflective film. It is also possible to use a non-metallic material as the non-reflective film and form it in stripes on the base material by printing or photographic coloring, thereby omitting the step of removing part of the non-reflective film by etching. It is.
以上説明した通り、本発明に係る光電式変位検
出装置の反射型スケールの製造方法によれば、非
反射膜をメツキレジストとして利用できるため、
工程が極めて簡単となり、しかも非反射膜は薄く
て良いので、サイドエツチングが小さくでき、微
細縞を形成することができる。更に、反射性に富
んだ材料を、例えば金としても、極小な面積にメ
ツキするのみで良いから、経済的にも有利であ
り、しかも、エツチング過剰等による反射膜表面
腐食も防止できる等の優れた効果を有する。 As explained above, according to the method for manufacturing a reflective scale for a photoelectric displacement detection device according to the present invention, a non-reflective film can be used as a plating resist.
The process is extremely simple, and since the non-reflective film can be thin, side etching can be reduced and fine stripes can be formed. Furthermore, even if a highly reflective material, such as gold, is used, it is economically advantageous because it only needs to be plated on a very small area, and it also has the advantage of preventing corrosion of the surface of the reflective film due to excessive etching. It has a great effect.
第１図は、反射型スケールが用いられた光電式
変位検出装置の原理的構成を示す断面図、第２図
は、本発明に係る光電式変位検出装置の反射型ス
ケールの製造方法の第１実施例工程を示す断面
図、第３図は、同じく第２実施例工程を示す断面
図である。
３０……導電体基材、３２……非反射膜、３４
……反射膜、３６……非導電体基材、３８……ニ
ツケル膜。
FIG. 1 is a cross-sectional view showing the basic configuration of a photoelectric displacement detection device using a reflection scale, and FIG. FIG. 3 is a cross-sectional view showing the process of the embodiment, and FIG. 3 is a cross-sectional view showing the process of the second embodiment. 30... Conductor base material, 32... Non-reflective film, 34
... Reflective film, 36 ... Non-conductor base material, 38 ... Nickel film.
Claims (1)
吸収又は反射防止するための非反射部とが交互に
形成されてなる光電式変位検出装置の反射型スケ
ールの製造方法において、 略矩形の基材の平坦な表面上に、非反射部とし
て作用し、且つ、非鍍金性を有する非反射膜を形
成した後、エツチングにより縞状に配設する第１
工程と、 該第１工程で配設された縞状の非反射膜をメツ
キレジストとして、基材露出面に反射部として作
用する反射膜を選択的にメツキする第２工程と を含むことを特徴とする光電式変位検出装置の反
射型スケールの製造方法。 ２ 前記基材が導電体とされ、酸化クロムからな
る前記非反射膜及び金からなる前記反射膜が、該
導電体基材の表面上に直接形成されている特許請
求の範囲第１項に記載の光電式変位検出装置の反
射型スケールの製造方法。 ３ 前記基材が非導電体とされ、酸化クロムから
なる前記非反射膜及び金からなる前記反射膜が、
前記非導電体基材上に形成されたニツケル膜上に
形成されている特許請求の範囲第１項に記載の光
電式変位検出装置の反射型スケールの製造方法。[Claims] 1. Manufacture of a reflective scale for a photoelectric displacement detection device in which reflective parts for reflecting incident light and non-reflecting parts for absorbing or preventing reflection of incident light are alternately formed. In the method, after forming a non-reflective film that acts as a non-reflective part and has non-plating properties on a flat surface of a substantially rectangular base material, a first film is formed in a striped manner by etching.
and a second step of selectively plating a reflective film that acts as a reflective part on the exposed surface of the base material using the striped non-reflective film provided in the first step as a plating resist. A method for manufacturing a reflective scale for a photoelectric displacement detection device. 2. Claim 1, wherein the base material is a conductor, and the non-reflective film made of chromium oxide and the reflective film made of gold are formed directly on the surface of the conductive base material. A method for manufacturing a reflective scale for a photoelectric displacement detection device. 3. The base material is a non-conductor, and the non-reflective film made of chromium oxide and the reflective film made of gold,
The method for manufacturing a reflective scale for a photoelectric displacement detection device according to claim 1, wherein the reflective scale is formed on a nickel film formed on the non-conductive base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17423381A JPS5875004A (en) | 1981-10-30 | 1981-10-30 | Reflective scale for photoelectric displacement detector and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17423381A JPS5875004A (en) | 1981-10-30 | 1981-10-30 | Reflective scale for photoelectric displacement detector and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5875004A JPS5875004A (en) | 1983-05-06 |
| JPS6311605B2 true JPS6311605B2 (en) | 1988-03-15 |
Family
ID=15975043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17423381A Granted JPS5875004A (en) | 1981-10-30 | 1981-10-30 | Reflective scale for photoelectric displacement detector and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5875004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2597431A1 (en) | 2011-11-22 | 2013-05-29 | Mitutoyo Corporation | Scale of photoelectric encoder and manufacturing method of the same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61197510U (en) * | 1985-05-31 | 1986-12-10 | ||
| GB8616240D0 (en) * | 1986-07-03 | 1986-08-13 | Renishaw Plc | Opto-electronic scale reading apparatus |
| DE4303975A1 (en) * | 1993-02-11 | 1994-08-18 | Heidenhain Gmbh Dr Johannes | graduation carrier |
| DE10011872A1 (en) * | 2000-03-10 | 2001-09-27 | Heidenhain Gmbh Dr Johannes | Reflection measurement graduation and method for producing the same |
| JP5239303B2 (en) * | 2007-11-14 | 2013-07-17 | 株式会社ニコン | Magnetic rotating body manufacturing method and encoder device |
| JP5577975B2 (en) * | 2010-09-15 | 2014-08-27 | 株式会社ニコン | Reflector plate for optical encoder, encoder, and method for manufacturing reflector plate for optical encoder |
| JP6425875B2 (en) * | 2013-06-14 | 2018-11-21 | 株式会社ミツトヨ | Scale for photoelectric type measuring instrument, encoder and method of forming scale |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55152410U (en) * | 1980-04-09 | 1980-11-04 |
-
1981
- 1981-10-30 JP JP17423381A patent/JPS5875004A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2597431A1 (en) | 2011-11-22 | 2013-05-29 | Mitutoyo Corporation | Scale of photoelectric encoder and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5875004A (en) | 1983-05-06 |
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