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JPS6312368B2 - - Google Patents
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JPS6312368B2 - - Google Patents

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Publication number
JPS6312368B2
JPS6312368B2 JP56159785A JP15978581A JPS6312368B2 JP S6312368 B2 JPS6312368 B2 JP S6312368B2 JP 56159785 A JP56159785 A JP 56159785A JP 15978581 A JP15978581 A JP 15978581A JP S6312368 B2 JPS6312368 B2 JP S6312368B2
Authority
JP
Japan
Prior art keywords
carbon film
resistor
hydrophilic
manufacturing
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56159785A
Other languages
Japanese (ja)
Other versions
JPS5860503A (en
Inventor
Hiroshi Myake
Hiroshi Hasegawa
Hiroto Nakamura
Masao Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56159785A priority Critical patent/JPS5860503A/en
Publication of JPS5860503A publication Critical patent/JPS5860503A/en
Publication of JPS6312368B2 publication Critical patent/JPS6312368B2/ja
Granted legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

【発明の詳細な説明】 本発明はチツプ型の炭素皮膜抵抗器の製造方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a chip-type carbon film resistor.

従来絶縁碍子表面に熱分解炭素を沈着させた炭
素皮膜抵抗器は、リード付またはリードレスの形
で多く使用されてきた。近年はリードレス、いわ
ゆるチツプ型抵抗器に関する需要が急増してい
る。
Conventionally, carbon film resistors, in which pyrolytic carbon is deposited on the surface of an insulator, have often been used in a leaded or leadless form. In recent years, demand for leadless, so-called chip resistors has rapidly increased.

このチツプ型の炭素皮膜抵抗器は第1図に示す
ように、碍子1の表面に炭素皮膜2が形成され、
両端に鉄製のキヤツプ3を圧入した構造を有して
いる。このため抵抗体本来の形状に比べ最終製品
の形状が大きくなり、また鉄製のキヤツプ3によ
り重量が増大するという欠点があり、軽量、小形
化が望まれている。
As shown in FIG. 1, this chip-type carbon film resistor has a carbon film 2 formed on the surface of an insulator 1.
It has a structure in which iron caps 3 are press-fitted at both ends. For this reason, the shape of the final product is larger than the original shape of the resistor, and the iron cap 3 increases the weight.Therefore, a reduction in weight and size is desired.

本発明者らはチツプ型炭素皮膜抵抗器の前記欠
点を改善する方法について検討の結果、前記鉄製
キヤツプの圧入に代えて、抵抗体の両端に金属を
めつきすることにより軽量、小形のチツプ型抵抗
器を製造できることを見い出した。
The present inventors investigated a method for improving the above-mentioned drawbacks of chip-type carbon film resistors, and found that instead of press-fitting the iron cap, by plating metal on both ends of the resistor, a lightweight and small chip-type resistor was developed. He discovered that it was possible to manufacture resistors.

この解決策として電極部に金属をめつきしたチ
ツプ型抵抗器があるが、高抵抗皮膜に対して電気
めつきが困難であることおよび無電解めつきをし
た場合にめつき付着力が十分に得られないことな
どの問題点を有している。
As a solution to this problem, there are chip-type resistors whose electrodes are plated with metal, but it is difficult to electroplate on high-resistance films, and when electroless plating is used, the plating adhesion is insufficient. There are problems such as the inability to obtain

本発明の炭素皮膜抵抗器の製造方法は、絶縁基
体表面に形成された炭素皮膜表面の電極を形成す
る部分を除いて保護皮膜を形成する工程と、この
保護皮膜で被覆されていない炭素皮膜表面を親水
性化する工程と、この親水性化した炭素皮膜表面
に金属めつきする工程を有し、炭素皮膜上に電極
を形成するもので、本来撥水性であり、通常直接
無電解めつきを行なつても強固な付着力を有する
めつき層をつくることが困難な熱分解炭素表面
に、電極となる金属めつき層を、抵抗体として使
用する炭素皮膜部分に一切の物理的、化学的変化
を与えないで形成することができるものである。
The method for manufacturing a carbon film resistor of the present invention includes the steps of forming a protective film on the surface of the carbon film formed on the surface of an insulating substrate except for the electrode-forming part, and the surface of the carbon film that is not covered with the protective film. This method involves the process of making the carbon film hydrophilic and the process of metal plating on the surface of this hydrophilic carbon film.The electrode is formed on the carbon film, which is inherently water repellent, and is usually used for direct electroless plating. On the surface of pyrolytic carbon, where it is difficult to create a plating layer with strong adhesion, we apply a metal plating layer that will become an electrode to the carbon film part that will be used as a resistor. It is something that can be formed without any change.

保護皮膜の材料は、その次の工程である炭素皮
膜の親水性化のための表面処理方法に対応して変
化するが、陽極酸化法および真空放電処理を採用
する場合は、皮膜を形成できる材料でさえあれば
良い。空気中加熱の方法の場合は、加熱に耐える
材料、例えばガラス、金属酸化物、金属炭化物、
金属けい素化物などの無機化合物、芳香族ポリイ
ミドその他の耐熱性高分子材料を使用する必要が
ある。
The material for the protective film will vary depending on the surface treatment method used in the next step to make the carbon film hydrophilic, but if anodizing or vacuum discharge treatment is used, the material that can form the film will vary. That's fine as long as it is. In the case of heating in air, materials that can withstand heating, such as glass, metal oxides, metal carbides,
It is necessary to use inorganic compounds such as metal silicides, aromatic polyimides, and other heat-resistant polymer materials.

炭素皮膜表面を親水性化する方法には、前記し
た3つの方法があり、まず第1の方法は炭素皮膜
を電解質溶液中で陽極酸化する方法である。すな
わち第2図に示すように電解質溶液4中に、絶縁
基体表面に炭素皮膜を形成しその中央部に保護皮
膜を形成してなる炭素皮膜抵抗体5を浸漬し、こ
の抵抗体5を陽極として水の電気分解を行うもの
であり、発生期の酸素により炭素皮膜表面を酸化
して親水性化するものである。陰極6の材料とし
てはカーボン、白金などの貴金属を用いることが
できるが、カーボン電極で十分である。電解質と
しては、無機酸、有機酸、アルカリ、これらの塩
などを用いることができる。溶媒は水のみでな
く、有機溶媒を用いても良い。
There are the three methods mentioned above to make the surface of the carbon film hydrophilic.The first method is to anodize the carbon film in an electrolyte solution. That is, as shown in FIG. 2, a carbon film resistor 5 formed by forming a carbon film on the surface of an insulating substrate and a protective film in the center is immersed in an electrolyte solution 4, and this resistor 5 is used as an anode. Water is electrolyzed, and the surface of the carbon film is oxidized by the nascent oxygen to make it hydrophilic. Although noble metals such as carbon and platinum can be used as the material for the cathode 6, a carbon electrode is sufficient. As the electrolyte, inorganic acids, organic acids, alkalis, salts thereof, etc. can be used. As the solvent, not only water but also an organic solvent may be used.

第2の方法は加熱空気中で炭素皮膜表面を酸化
させる方法である。処理条件は炭素皮膜の作成条
件により変化するが、一般的に550℃以下の温度
で加熱すれば、過剰酸素による炭素皮膜の消失な
どの障害を防止することができる。
The second method is to oxidize the surface of the carbon film in heated air. Processing conditions vary depending on the conditions for forming the carbon film, but in general heating at a temperature of 550°C or lower can prevent problems such as disappearance of the carbon film due to excess oxygen.

第3の方法は低真空度の気体中で放電させる方
法である。気体としては空気、アルゴン、窒素、
酸素などまたはフツ素化合物、塩素化合物など
10-2torr〜1torrの真空度でガス化する化合物は
すべて使用することができる。放電用電源として
は気体中で放電を開始しうる電圧を発生するもの
であれば良く、直流から極超短波までの周波数で
任意に選ぶことができる。放電時の真空度は
10-3torrないし1torrのいわゆるグロー放電を発
生する真空度が好ましいが、高周波電源を用いる
ことにより10-4torr台の真空度での処理も可能で
ある。
The third method is a method of discharging in a gas at a low degree of vacuum. Gases include air, argon, nitrogen,
Oxygen, etc. or fluorine compounds, chlorine compounds, etc.
Any compound that gasifies at a vacuum of 10 -2 torr to 1 torr can be used. The discharge power source may be any power source as long as it generates a voltage capable of starting a discharge in gas, and any frequency from direct current to extremely short waves can be selected. The degree of vacuum during discharge is
A vacuum level that generates a so-called glow discharge of 10 -3 torr to 1 torr is preferable, but processing at a vacuum level of 10 -4 torr is also possible by using a high frequency power source.

以上の親水性化処理の後、この親水性化の処理
方法の違いにより、直ちに、または炭素皮膜上の
電極を形成する部分を除いて非親水性材料を被覆
した後に、金属めつきにより電極を形成する。
After the above hydrophilic treatment, depending on the hydrophilic treatment method, the electrode can be attached by metal plating either immediately or after coating the carbon film with a non-hydrophilic material except for the part where the electrode will be formed. Form.

すなわち保護皮膜に非親水性材料を用い、陽極
酸化法による親水性化処理を行つた場合は、直ち
に金属めつき工程に移ることができるが、加熱処
理または真空放電処理を採用した場合は、例え保
護皮膜が非親水性であつても炭素皮膜の処理時に
親水性化されやすく、そのため金属めつきに先立
つて非親水性材料により、電極を形成しない部分
を改めて被覆するのが望ましい。ただし改めて被
覆しないで仮に保護皮膜上に金属層が形成されて
も、この金属層の保護皮膜への付着強度は弱く、
後に機械的に剥離することは可能である。
In other words, if a non-hydrophilic material is used for the protective film and it is made hydrophilic by anodic oxidation, it is possible to proceed immediately to the metal plating process, but if heat treatment or vacuum discharge treatment is used, for example Even if the protective film is non-hydrophilic, it is likely to become hydrophilic during treatment of the carbon film, so it is desirable to recoat the portions where no electrodes will be formed with a non-hydrophilic material prior to metal plating. However, even if a metal layer is formed on the protective film without being coated again, the adhesion strength of this metal layer to the protective film is weak.
It is possible to peel it off mechanically afterwards.

なお非親水性材料を炭素皮膜上に被覆させるに
は、転写、はけ塗り、スプレーなどの方式を用い
ることができる。非親水性材料としては、パラフ
インワツクスに代表される各種ワツクス類、ポリ
スチレンに代表される各種熱可塑性樹脂、フエノ
ール樹脂に代表される各種熱硬化性樹脂などを使
用することができる。
Note that methods such as transfer, brushing, and spraying can be used to coat the carbon film with the non-hydrophilic material. As the non-hydrophilic material, various waxes such as paraffin wax, various thermoplastic resins such as polystyrene, and various thermosetting resins such as phenolic resin can be used.

これらの非親水性材料を改めて被覆した抵抗体
または親水性化処理されたそのままの抵抗体は、
次に金属めつきにより電極が形成される。金属め
つきの方法としては従来公知の無電解めつき法が
用いられる。また電極の膜厚として厚い膜厚を必
要とする場合は、無電解めつきに引き続き、電気
めつきにより電極膜厚を増す方が短時間で厚い電
極を得ることができるので望ましい。電気めつき
法としては、バレルめつきまたはその改良した方
法により行うことができる。
Resistors recoated with these non-hydrophilic materials or as-is resistors treated to make them hydrophilic are
Electrodes are then formed by metal plating. As the metal plating method, a conventionally known electroless plating method is used. Further, when a thick electrode is required, it is preferable to increase the electrode thickness by electroplating followed by electroless plating because a thick electrode can be obtained in a short time. As the electroplating method, barrel plating or an improved method thereof can be used.

以上のようにして電極を形成した抵抗体は、保
護皮膜または非親水性材料を被覆したまま、また
は剥離してのちに抵抗値付けのための溝切りを行
い、保護塗料を塗布して最終製品としての炭素皮
膜抵抗器となる。
The resistor with electrodes formed in the above manner may be coated with a protective film or non-hydrophilic material, or after it has been peeled off, grooves are cut to determine the resistance value, and a protective coating is applied to the final product. It becomes a carbon film resistor.

このようにして作成された炭素皮膜抵抗器の一
例を第3図に示す。図において、7は絶縁基体で
ある碍子、8はこの碍子の表面に形成された炭素
皮膜、9は炭素皮膜5が形成された碍子7の両端
に金属めつきにより形成された電極である。
An example of a carbon film resistor produced in this manner is shown in FIG. In the figure, 7 is an insulator which is an insulating base, 8 is a carbon film formed on the surface of this insulator, and 9 is an electrode formed by metal plating on both ends of the insulator 7 on which the carbon film 5 is formed.

なお保護皮膜や非親水性材料が除去されない場
合は、中央部分に保護皮膜などが残つている。ま
た図示していないが、保護塗料も塗布されてい
る。
Note that if the protective film or non-hydrophilic material is not removed, the protective film remains in the central portion. Although not shown, a protective paint is also applied.

この炭素皮膜抵抗器は、電極のめつき厚が従来
のキヤツプの厚みに対して非常に薄く、小形、軽
量でしかも炭素皮膜に全面的に接触しているため
信頼性が高い。
This carbon film resistor is highly reliable because the electrode plating thickness is much thinner than that of a conventional cap, and it is small, lightweight, and is in full contact with the carbon film.

以下、本発明の炭素皮膜抵抗器の製造方法の実
施例について説明する。
Examples of the method for manufacturing a carbon film resistor of the present invention will be described below.

実施例 A 直径3mm、長さ11mmのアルミナ棒表面に通常の
方法により炭素皮膜を沈着させ、抵抗体を製造し
た。
Example A A resistor was manufactured by depositing a carbon film on the surface of an alumina rod having a diameter of 3 mm and a length of 11 mm by a conventional method.

この抵抗体の両端より各々2mmの幅を除いた中
央部にレゾール型フエノール樹脂を塗布し、180
℃で10分間硬化させてのち、5%しゆう酸溶液に
浸漬して第2図に示した装置を用いて親水性化処
理を行つた。
Apply resol type phenol resin to the center part excluding a width of 2 mm from both ends of this resistor, and
After curing at ℃ for 10 minutes, it was immersed in a 5% oxalic acid solution to make it hydrophilic using the apparatus shown in FIG.

次にこの抵抗体全体を感受性化溶液および活性
化溶液にて処理し、通常の方法により無電解ニツ
ケルめつきを行い、抵抗体の両端部にニツケル電
極を形成した。
Next, the entire resistor was treated with a sensitizing solution and an activating solution, and electroless nickel plating was performed using a conventional method to form nickel electrodes at both ends of the resistor.

次に抵抗値付けのための溝切りを行い、通常の
保護塗装を施し、チツプ型の炭素皮膜抵抗器を完
成した。
Next, grooves were cut to determine the resistance value, and the usual protective coating was applied to complete the chip-shaped carbon film resistor.

このチツプ型の炭素皮膜抵抗器の耐熱特性、耐
湿特性、ノイズ特性などの諸特性は、通常のキヤ
ツプ使用の抵抗器に比較して全く差はなく、また
抵抗体の表面処理に基づく抵抗値の変化も全く生
じなかつた。一方、重量は従来のものに比較し、
約30%軽量化できた。
The characteristics of this chip-type carbon film resistor, such as heat resistance characteristics, moisture resistance characteristics, and noise characteristics, are completely the same as those of ordinary cap resistors, and the resistance value depends on the surface treatment of the resistor. No changes occurred at all. On the other hand, the weight is compared to the conventional one,
The weight was reduced by approximately 30%.

実施例 B 実施例Aにおいて炭素皮膜の処理に用いる電解
質溶液を1%水酸化ナトリウム水溶液とした場合
にも良好な処理効果が得られ、抵抗器の電極部分
に銅線をはんだ付けして電極の密着強度を測定し
たところ、2.0Kg/mm2の強度であつた。
Example B A good treatment effect was also obtained when the electrolyte solution used to treat the carbon film in Example A was a 1% aqueous sodium hydroxide solution, and a copper wire was soldered to the electrode part of the resistor. When the adhesion strength was measured, it was 2.0 Kg/mm 2 .

実施例 C 実施例Aで用いたものと同じ未処理の炭素皮膜
抵抗体の両端より、各々2mmを除いた中央部に低
融点ガラスフリツトを塗布し、窒素中で600℃に
加熱してガラスの保護皮膜を設けた。次にこの抵
抗体を空気中で550℃に加熱し、露出している炭
素皮膜に親水性化処理を行つた。その後通常の方
法により抵抗体の両端部に無電解銅めつきし、次
にバレルめつき装置に投入して電気銅めつきを行
い、両端部に銅電極を有する抵抗器を得た。
Example C A low-melting glass frit was applied to the center of the same untreated carbon film resistor as used in Example A, with a distance of 2 mm removed from each end, and the glass was protected by heating to 600°C in nitrogen. A film was applied. Next, this resistor was heated to 550°C in air to make the exposed carbon film hydrophilic. Thereafter, both ends of the resistor were plated with electroless copper using a conventional method, and then placed in a barrel plating device for electroplating with copper to obtain a resistor having copper electrodes on both ends.

実施例 D 実施例Aで用いたものと同じ未処理の炭素皮膜
抵抗体の両端部より2mmを残した中央部にレゾー
ル型フエノール樹脂を塗布し、150℃で10分間乾
燥させたのち、真空容器中に入れ、5×10-1torr
の空気中で直流スパツタをして表面処理を行つ
た。次に再びレゾール型フエノール樹脂を抵抗体
中央部に塗布し、180℃で30分間硬化させてのち、
実施例Cと同様にして電極を形成した。この電極
の抵抗体への付着力は2.5Kg/mm2であつた。
Example D A resol-type phenol resin was applied to the center of the same untreated carbon film resistor as used in Example A, leaving 2 mm from both ends, dried at 150°C for 10 minutes, and then placed in a vacuum container. Put it inside, 5×10 -1 torr
Surface treatment was performed by direct current sputtering in air. Next, resol type phenolic resin was applied to the center of the resistor again, and after curing at 180℃ for 30 minutes,
Electrodes were formed in the same manner as in Example C. The adhesion force of this electrode to the resistor was 2.5 Kg/mm 2 .

実施例 E 実施例Dにおいて放電電源に12.7MHzの高周波
電源を用い、5×10-4torrのアルゴン中で炭素皮
膜の処理を行つた場合も、実施例Dと同様の結果
が得られた。
Example E In Example D, the same results as in Example D were obtained when a 12.7 MHz high frequency power source was used as the discharge power source and the carbon film was treated in argon at 5×10 −4 torr.

実施例 F 実施例Dにおいて炭素皮膜の処理に空気に代え
て、塩素化フツ素化アルキル〔ダイキン(株)製
商品名ダイフロン〕を用いた場合も空気と同様の
処理効果を示した。
Example F In Example D, when a chlorinated fluorinated alkyl (trade name: DAIFLON, manufactured by Daikin Corporation) was used instead of air to treat the carbon film, the same treatment effect as that of air was obtained.

なお前記実施例A〜Fにおいては主としてニツ
ケルおよび銅のめつきについて説明したが、前記
炭素皮膜の処理方法を採用することにより、金、
銀、パラジウム、白金、錫、はんだ、その他の無
電解めつきを適用することもできる。
In Examples A to F, the explanation was mainly about nickel and copper plating, but by adopting the above carbon film treatment method, gold, copper plating, etc.
Electroless plating of silver, palladium, platinum, tin, solder, and others can also be applied.

以上のように本発明の炭素皮膜抵抗器の製造方
法により、本来撥水性で直接無電解めつきを行う
のが困難な熱分解炭素表面に、金属めつき屑を容
易に形成することができる。
As described above, by the method of manufacturing a carbon film resistor of the present invention, metal plating debris can be easily formed on the surface of pyrolytic carbon, which is inherently water repellent and difficult to directly apply electroless plating to.

また本発明方法により製造された炭素皮膜抵抗
器は、小形、軽量であり、しかも電極が炭素皮膜
と全面的に接触しており信頼性が高い炭素皮膜抵
抗器である。
Furthermore, the carbon film resistor manufactured by the method of the present invention is small and lightweight, and has high reliability since the electrodes are in full contact with the carbon film.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の炭素皮膜抵抗器の断面図、第2
図は本発明方法の一実施例において用いる陽極酸
化装置の模式図、第3図は本発明方法により製造
された炭素皮膜抵抗器の一例を示す断面図であ
る。 4……電解質溶液、5……炭素皮膜抵抗体、6
……陰極、7……碍子(絶縁基体)、8……炭素
皮膜、9……電極(金属めつき屑)。
Figure 1 is a cross-sectional view of a conventional carbon film resistor, Figure 2 is a cross-sectional view of a conventional carbon film resistor.
The figure is a schematic diagram of an anodizing apparatus used in an embodiment of the method of the present invention, and FIG. 3 is a sectional view showing an example of a carbon film resistor manufactured by the method of the present invention. 4... Electrolyte solution, 5... Carbon film resistor, 6
... Cathode, 7 ... Insulator (insulating base), 8 ... Carbon film, 9 ... Electrode (metal plating scrap).

Claims (1)

【特許請求の範囲】 1 絶縁基体表面に形成された炭素皮膜表面の電
極を形成する部分を除いて保護皮膜を形成する工
程と、この保護皮膜で被覆されていない炭素皮膜
表面を親水性化する工程と、この親水性化した炭
素皮膜表面に金属をめつきする工程とにより炭素
皮膜上に電極を形成する炭素皮膜抵抗器の製造方
法。 2 電解質溶液中における陽極酸化により炭素皮
膜表面を親水性化する特許請求の範囲第1項記載
の炭素皮膜抵抗器の製造方法。 3 空気中での加熱により炭素皮膜表面を親水性
化する特許請求の範囲第1項記載の炭素皮膜抵抗
器の製造方法。 4 低真空度の気体中での放電により炭素皮膜表
面を親水性化する特許請求の範囲第1項記載の炭
素皮膜抵抗器の製造方法。 5 無電解めつき法により炭素皮膜表面に金属を
めつきする特許請求の範囲第1項記載の炭素皮膜
抵抗器の製造方法。 6 無電解めつき法および続けて電気めつき法に
より炭素皮膜表面に金属をめつきする特許請求の
範囲第1項記載の炭素皮膜抵抗器の製造方法。
[Claims] 1. A step of forming a protective film on the surface of the carbon film formed on the surface of the insulating substrate except for the portion where the electrode is to be formed, and making the surface of the carbon film not covered with the protective film hydrophilic. and a step of plating metal on the surface of the hydrophilic carbon film to form electrodes on the carbon film. 2. The method of manufacturing a carbon film resistor according to claim 1, wherein the surface of the carbon film is made hydrophilic by anodizing in an electrolyte solution. 3. The method of manufacturing a carbon film resistor according to claim 1, wherein the surface of the carbon film is made hydrophilic by heating in air. 4. The method of manufacturing a carbon film resistor according to claim 1, wherein the surface of the carbon film is made hydrophilic by electric discharge in a low vacuum gas. 5. A method for manufacturing a carbon film resistor according to claim 1, wherein metal is plated on the surface of the carbon film by an electroless plating method. 6. The method of manufacturing a carbon film resistor according to claim 1, wherein metal is plated on the surface of the carbon film by an electroless plating method and subsequently an electroplating method.
JP56159785A 1981-10-06 1981-10-06 Manufacturing method of carbon film resistor Granted JPS5860503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56159785A JPS5860503A (en) 1981-10-06 1981-10-06 Manufacturing method of carbon film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56159785A JPS5860503A (en) 1981-10-06 1981-10-06 Manufacturing method of carbon film resistor

Publications (2)

Publication Number Publication Date
JPS5860503A JPS5860503A (en) 1983-04-11
JPS6312368B2 true JPS6312368B2 (en) 1988-03-18

Family

ID=15701214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159785A Granted JPS5860503A (en) 1981-10-06 1981-10-06 Manufacturing method of carbon film resistor

Country Status (1)

Country Link
JP (1) JPS5860503A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266714A (en) * 2007-04-19 2008-11-06 Meltex Inc Precipitating property improving agent for plating object and barrel plating method using the precipitating agent

Also Published As

Publication number Publication date
JPS5860503A (en) 1983-04-11

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